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At least 505 records · Page 28

Structural and Electrocatalytic Studies of Pulsed Laser Deposited Epitaxial RuO 2 Thin Films

Two sets of high-quality epitaxial ruthenium oxide (RuO 2 ) thin films with different thicknesses were synthesized in situ on cost-competitive sapphire substrates by using a pulsed laser deposition technique. The first set of films, with a thickness of 40 nm and a sheet resistance of 15.7 Ω/□, was prepared using 2100 laser pulses, while the second set of films, with a thickness of 87 nm and a sheet resistance of 6.7 Ω/□, was prepared using 4800 laser pulses. All other deposition parameters were kept the same. The post-deposition structural and morphological measurements showed that both sets of films grew at the same growth rate, had the same crystallinity, similar grain boundary density, and slightly different surface roughness. The thicker RuO 2 films achieved an overpotential of 280 mV for the oxygen evolution reaction at a current density of 100 μA/cm 2 , comparable to or exceeding the performance of films grown on more expensive substrates. Comparatively, the thinner RuO 2 films, which have a significantly higher charge transfer resistance (250 Ω versus 100 Ω for thick films), display a higher overpotential of 320 mV. These results indicate that the lower electrical resistance of thicker films promotes charge transfer through the film body, leading to superior electrocatalytic properties.

charge-transfer↗

Machine Learning Framework for Characterizing Processing–Structure Relationship in Block Copolymer Thin Films

The morphology of block copolymers (BCPs) critically influences material properties and applications. This work introduces a machine learning (ML)-enabled, high-throughput framework for analyzing grazing incidence small-angle X-ray scattering (GISAXS) data and atomic force microscopy (AFM) images to characterize BCP thin film morphology. A convolutional neural network was trained to classify AFM images by surface features, achieving 97% testing accuracy. Classified images were then analyzed to extract 2D grain size measurements from the samples in a high-throughput manner. ML models were trained to predict domain orientation based on processing parameters such as solvent ratio, additive type, and additive ratio. GISAXS-based properties were predicted with strong performances (R 2 > 0.75), while AFM-based property predictions were less accurate (R 2 < 0.60), likely due to the localized nature of AFM measurements compared to the bulk information captured by GISAXS. Beyond model performance, interpretability was addressed using SHapley Additive exPlanations (SHAP). SHAP analysis revealed that the additive ratio had the largest impact on morphological predictions, where additive provides the BCP chains with increased volume to rearrange into thermodynamically favorable morphologies. This interpretability helps validate model predictions and offers insight into parameter importance. Altogether, the presented framework combining high-throughput characterization and interpretable ML offers an approach to exploring and optimizing BCP thin film morphology across a broad processing landscape.

36 MATERIALS SCIENCE↗

Improved catalytic activity of Mo x Ni y Al z thin films as electrocatalyst for hydrogen evolution reaction in alkaline media

In this work, we report activities of Mo x Ni y X z (where X is Al, Co, Cr, Cu, Fe, W)-based electrocatalysts for hydrogen evolution reaction (HER) in a 1 M NaOH solution. Mo x Ni y X z thin film electrocatslysts were prepared by magentron sputtering at 25°C and 800°C and characterized by scanning electron microscopy (SEM) with energy dispersive X-ray (EDX) analyzer and X-ray diffraction (XRD) analysis. Here, the catalytic activity of electrocatalyst was studied by cyclic voltammetry and electrochemical impedance spectroscopy. The electrocatalyst based on Mo 80 Ni 5 Al 15 (800°C) shows the best value of the overpotential (-181 mV) for HER from all tested ternary systems. XRD analysis indicates that HER activity only Mo 80 Ni 5 Al 15 thin films prepared at 800°C contained fcc phase. Other less active composition contained only bcc phase. The results obtained from impedance spectroscopy are consistent with the results from cyclic voltammetry. The stability of the prepared catalyst was studied by chronoamperometric analysis. The results from chronoamperometry show that HER activity of Mo 80 Ni 5 Al 15 prepared at 800°C, after very slight initial activity decrease, stays constant, while activity of Ni catalyst decreased almost twice in measured time window. Since Ni is commonly used industrial catalyst, Mo 80 Ni 5 Al 15 based alloy could be more attractive catalyst material for alkaline electrolyzers.

08 HYDROGEN↗

Intergranular Spin Dependent Tunneling Dominated Magnetoresistance in Helimagnetic Manganese Phosphide Thin Films

Helical magnets are emerging as a novel class of materials for spintronics and sensor applications; however, research on their charge- and spin-transport properties in a thin film form is less explored. Herein, we report the temperature and magnetic field-dependent charge transport properties of a highly crystalline MnP nanorod thin film over a wide temperature range (2 K < T < 350 K). The MnP nanorod films of ~100 nm thickness were grown on Si substrates at 500 °C using molecular beam epitaxy. The temperature-dependent resistivity ρ(T) data exhibit a metallic behavior (dρ/dT > 0) over the entire measured temperature range. However, large negative magnetoresistance (Δρ/ρ) of up to 12% is observed below ~50 K at which the system enters a stable helical (screw) magnetic state. In this temperature regime, the Δρ(H)/ρ(0) dependence also shows a magnetic field-manipulated CONE + FAN phase coexistence. The observed magnetoresistance is dominantly governed by the intergranular spin dependent tunneling mechanism. These findings pinpoint a correlation between the transport and magnetism in this helimagnetic system.

36 MATERIALS SCIENCE↗

Synthesis of Samarium Nitride Thin Films on Magnesium Oxide (001) Substrates Using Molecular Beam Epitaxy

Rare-earth nitrides are an exciting family of materials with a wide variety of properties desirable for new physics and applications in spintronics and superconducting devices. Among them, samarium nitride is an interesting compound reported to have ferromagnetic behavior coupled with the potential existence of p-wave superconductivity. Synthesis of high-quality thin films is essential in order to manifest these behaviors and understand the impact that vacancies, structural distortions, and doping can have on these properties. In this study, we report the synthesis of samarium nitride monocrystalline thin films on magnesium oxide (001) substrates with a chromium nitride capping layer using molecular beam epitaxy (MBE). We observed a high-quality monocrystalline SmN film with matching orientation to the substrate, then optimized the growth temperature. Despite the initial 2 nm of growth showing formation of a potential samarium oxide layer, the subsequent layers showed high-quality SmN, with semiconducting behavior revealed by an increase in resistivity with decreasing temperature. These promising results highlight the importance of studying diverse heteroepitaxial schemes and open the door for integration of rare-earth nitrides and transition metal nitrides for future spintronic devices.

36 MATERIALS SCIENCE↗

Synchrotron X-ray-induced Synthesis of Copper Hydroxide Nitrate Nanoplates on Cu Thin Films in an Ambient Atmosphere

Synchrotron X-rays are widely used for material characterizations. However, they can also ionize atoms and molecules to damage and manipulate probed materials. We report here an X-ray-induced growth of copper hydroxide nitrate, Cu 2 (OH) 3 NO 3 , on copper thin films in the ambient atmosphere without solvents and thermal treatment. In situ synchrotron X-ray diffraction measurements showed that the time-dependent growth process of the Cu 2 (OH) 3 NO 3 is accompanied by the consumption of Cu metal and can be described by a sigmoidal model. The growth rate was reduced after the initial fast growth period. Scanning electron microscopy (SEM) images show that the isolated islands of Cu 2 (OH) 3 NO 3 nanoplates formed in the beginning, which grew together with new nanoplates formed under continued X-ray irradiation. The result demonstrated that high-flux synchrotron X-rays may provide an unconventional approach to synthesizing and manipulating materials, which will inspire future investigation both experimentally and theoretically.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Cryogenic hybrid magnonic circuits based on spalled YIG thin films

Yttrium iron garnet (YIG) magnonics has garnered significant research interest because of the unique properties of magnons (quasiparticles of collective spin excitation) for signal processing. In particular, hybrid systems based on YIG magnonics show great promise for quantum information science due to their broad frequency tunability and strong compatibility with other platforms. However, their broad applications have been severely constrained by substantial microwave loss in the gadolinium gallium garnet (GGG) substrate at cryogenic temperatures. In this study, we demonstrate that YIG thin films can be spalled from YIG/GGG samples. Our approach is validated by measuring hybrid devices comprising superconducting resonators and spalled YIG films, which exhibit anti-crossing features that indicate strong coupling between magnons and microwave photons. Such new capability of separating YIG thin films from GGG substrates via spalling and the integrated superconductor-YIG devices represent a significant advancement for integrated magnonic devices, paving the way for advanced magnon-based coherent information processing.

36 MATERIALS SCIENCE↗

Chemical Compensation Challenges in Processing Antiferroelectric PbZrO 3 Thin Films

The electric field-induced antipolar-to-polar phase transition in antiferroelectric materials is accompanied by large changes in the structural and functional response, making them attractive for many applications ranging from pulsed energy capacitors to high-strain-high (blocking-)force actuators, solid-state heating and cooling systems, and optoelectronic devices. PbZrO 3 , as an end member of the PZT, (x)PbZr 1–x Ti x O 3 , solid solution, has been the subject of many studies. However, processing of perovskite PbZrO 3 is extremely challenging due to phase instabilities induced by Pb loss at the temperatures necessary for perovskite crystallization. Here, we discuss the challenges associated with Pb loss, as well as its compensation through bulk Pb overstoichiometry and interfacial PbO additions, in chemical solution processed, highly oriented PbZrO 3 thin films. For both 042 o - and 001 o -oriented (o-orthorhombic distortion) PbZrO 3 thin films, the crystallization interfaces are the most important contributors to Pb loss and off-stoichiometric outcomes, and no single approach was sufficient to address these challenges. Pb-rich and Pb-deficient nonperovskite phases including ZrO x were only observable through microscopic characterization, and X-ray diffraction alone could not rule out the presence of such secondary phases. “Ideal” macroscopic antiferroelectric polarization-electric field double hysteresis curves were observed despite (at times) the large presence of secondary phases. However, reduced saturation polarization and increased phase transition electric fields were observed concomitantly with the presence of secondary phase(s) and tentatively assigned to the voltage drop across the ZrO x nanocrystals. Based on these results, it is imperative that the presence of secondary phases always be addressed (beyond X-ray diffraction spectra) in order to correctly evaluate the properties of antiferroelectric films.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Electrochemical stability, physical, and electronic properties of thermally pre-formed oxide compared to artificially sputtered oxide on Fe thin films in aqueous chloride

Here the electrochemical stability and corrosion behavior of the thermally pre-oxidized and sputter deposited variant of an oxide single-crystalline Fe thin film were compared. Thermal oxides formed Fe 2 O 3 over an inner layer of Fe 3 O 4 while the sputtered oxides were found to have grown Fe 3 O 4 instead of the target stoichiometry of Fe 2 O 3 . Oxide films of both types were stable in pH=9.3 borate buffer solution, however, were altered in pH=9.3, 0.1 M NaCl solution in the case of thermally pre-oxidized Fe thin film. The stability of the oxide differed in pH=4, 0.1 M NaCl where sputtered Fe films were more stable against acidic chemical dissolution than the thermally formed Fe oxide film. These differences were traced by AC/DC electrochemical analysis including electronic defect densities, and molecular identity characterized by ex-situ X-ray photoelectron spectroscopy.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Aspects of the synthesis of thin film superconducting infinite-layer nickelates

The recent observation of superconductivity in Nd 0.8 Sr 0.2 NiO 2 calls for further investigation and optimization of the synthesis of this infinite-layer nickelate structure. Here, we present our current understanding of important aspects of the growth of the parent perovskite compound via pulsed laser deposition on SrTiO 3 (001) substrates and the subsequent topotactic reduction. We find that to achieve single-crystalline, single-phase superconducting Nd 0.8 Sr 0.2 NiO 2 , it is essential that the precursor perovskite Nd 0.8 Sr 0.2 NiO 3 thin film is stabilized with no visible impurity phases; in particular, a Ruddlesden–Popper-type secondary phase is often observed. We have further investigated the evolution of the soft-chemistry topotactic reduction conditions to realize full transformation to the infinite-layer structure with no film decomposition or formation of other phases. We find that capping the nickelate film with a subsequent SrTiO 3 layer provides an epitaxial template to the top region of the nickelate film, much like the substrate. Thus, for currently optimized growth conditions, we can stabilize superconducting single-phase Nd 0.8 Sr 0.2 NiO 2 (001) epitaxial thin films up to ~10 nm.

36 MATERIALS SCIENCE↗

Oxygen Distribution and Segregation at Grain Boundaries in Nb and Ta-Encapsulated Nb Thin Films for Superconducting Qubits

We report on atomic-scale analyses of oxygen distribution and segregation at grain boundaries (GBs) of Nb and Ta-encapsulated Nb (Ta/Nb) thin films for superconducting qubits using atom probe tomography (APT) and transmission electron microscopy (TEM). We observe oxygen segregation at grain boundaries (GBs) relative to the oxygen concentration within the grains for both Nb and Ta-capped Nb thin films and find that a higher oxygen concentration in the interior of Nb grains leads to greater oxygen segregation levels at GBs. This finding reveals that the formation of a local equilibrium of oxygen concentration between GBs and grain interiors of Nb is the primary driving force of the oxygen segregation behaviors in Nb and Ta-capped Nb. The enrichment factors (CGB/Cgrain) for oxygen segregation at GBs in Nb and Ta-capped Nb range from 2.4 ± 0.3 to 2.7 ± 0.4. The current results also highlight that controlling oxygen impurities in Nb during film deposition and fabrication processing is important to concomitantly reducing the level of oxygen segregation at GBs in Nb. Finally, we find that increases in the oxygen concentration in both Nb grains and GBs correlate with a suppression in the critical temperature for superconductivity (Tc). Together, our comparative chemical and charge transport property analyses provide atomic-scale insights into a potential mechanism, contributing to the decoherence in superconducting qubits.

Lee, Jaeyel [Fermilab] (ORCID:0000000185429612)↗

Chemical Environment and Structural Variations in High Entropy Oxide Thin Film Probed with Electron Microscopy

For this work, we employ analytical transmission electron microscopy (TEM) to correlate the structural and chemical environment variations within a stacked epitaxial thin film of the high entropy oxide (HEO) Mg 0.2 Co 0.2 Ni 0.2 Cu 0.2 Zn 0.2 O (J14), with two layers grown at different substrate temperatures (500 and 200 °C) using pulsed laser deposition (PLD). Electron diffraction and atomically resolved STEM imaging reveal the difference in out-of-plane lattice parameters in the stacked thin film, which is further quantified on a larger scale using four-dimensional STEM (4D-STEM). In the layer deposited at a lower temperature, electron energy loss spectroscopy (EELS) mapping indicates drastic changes in the oxidation states and bonding environment for Co ions, and energy-dispersive X-ray spectroscopy (EDX) mapping detects more significant cation deficiency. Ab initio density functional theory (DFT) calculations validate that vacancies on the cation sublattice of J14 result in significant electronic and structural changes. The experimental and computational analyses indicate that low temperatures during film growth result in cation deficiency, an altered chemical environment, and reduced lattice parameters while maintaining a single phase. Our results demonstrate that the complex correlation of configurational entropy, kinetics, and thermodynamics can be utilized for accessing a range of metastable configurations in HEO materials without altering cation proportions, enabling further engineering of functional properties of HEO materials.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Conductive Thin Films over Large Areas by Supramolecular Self-Assembly

We report a “one-step” method for preparing conductive thin films with cylindrical microdomains oriented normal to the surface over large areas using the supramolecular assembly of poly(styrene-block-4-vinylpyridine) (PS19-b-P4VP 5 ) and 5,10,15,20-tetrakis(4-hydroxyphenyl)-21H,23H-porphine (HOTPP). HOTPP interacts with the P4VP block by hydrogen bonding between the hydroxyl group of HOTPP and pyridine ring of PS 19 -b-P4VP 5 , forming cylindrical P4VP(HOTPP) domains having an average diameter of ~17 nm in a PS matrix. Here, dynamic light scattering, contact angle, and in situ grazing incidence small-angle X-ray scattering measurements show a morphological transition from spherical micelles in solution to cylindrical microdomains oriented normal to the substrate surface during the drying process. From the dependence of current on voltage, an average current of ~4.0 nA is found to pass through a single microdomain, pointing to a promising route for organic semiconductor device applications.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Enhanced Planar Antenna Efficiency Through Magnetic Thin-Films

This work proposes to use magnetic material as the substrate of planar antennas to overcome the platform effect caused by the conducting ground plane. The upper bound of the radiation efficiency of an electric-current-driven low-profile antenna is theoretically derived, which is inversely proportional to the Gilbert damping factor of the magnetic material. Meanwhile, the improvement of radiation due to the use of magnetic material is demonstrated by a three-dimensional (3D) multiphysics and multiscale time-domain model. The simulation results match the theoretical derivation, showing 25% radiation efficiency from a planar antenna backed by a FeGaB thin film with 2.56 m thickness. Furthermore, for conductive ferromagnetic materials, it is shown that the eddy current loss can be well suppressed by laminating the thin film into multiple layers. Here, the radiation efficiency of the modeled antenna with a conductive ferromagnetic substrate is improved from 2.2% to 11.8% by dividing the substrate into 10 layers, with a ferromagnetic material fill factor of 93%.

42 ENGINEERING↗

Post‐Annealing Treatment on Hydrothermally Grown Antimony Sulfoselenide Thin Films for Efficient Solar Cells

Herein, antimony sulfoselenide (Sb 2 (S, Se) 3 ) thin‐film solar cells are fabricated by a hydrothermal method followed by a post‐deposition annealing process at different temperatures and the impact of the annealing temperature on the morphological, structural, optoelectronic, and defect properties of the hydrothermally grown Sb 2 (S, Se) 3 films is investigated. It is found that a proper annealing temperature leads to high‐quality Sb 2 (S, Se) 3 films with large crystal grains, high crystallinity, preferred crystal orientation, smooth and uniform morphology, and reduced defect density. These results show that suppressing deep‐level defects is crucial to enhance solar cell performance. After optimizing the annealing process, Sb 2 (S, Se) 3 solar cells with an improved power conversion efficiency 2.04 to 8.48% are obtained.

14 SOLAR ENERGY↗

Challenges to magnetic doping of thin films of the Dirac semimetal Cd 3 As 2

Magnetic doping of topological quantum materials provides an attractive route for studying the effects of time-reversal symmetry breaking. Thus motivated, we explore the introduction of the transition metal Mn into thin films of the Dirac semimetal Cd 3 A s2 during growth by molecular beam epitaxy. Scanning transmission electron microscopy measurements show the formation of a Mn-rich phase at the top surface of Mn-doped Cd 3 A s2 thin films grown using both uniform doping and delta doping. This suggests that Mn acts as a surfactant during epitaxial growth of Cd 3 A s2 , resulting in phase separation. Magnetometry measurements of such samples indicate a ferromagnetic phase with out-of-plane magnetic anisotropy. Electrical magneto-transport measurements of these films as a function of temperature, magnetic field, and chemical potential reveal a lower carrier density and higher electron mobility compared with pristine Cd 3 A s2 films grown under similar conditions. This suggests that the surfactant effect might also serve to remove impurities from the bulk of the film. Further, we observe robust quantum transport (Shubnikov-de Haas oscillations and an incipient integer quantum Hall effect) in very thin (7 nm) Cd 3 A s2 films despite being in direct contact with a structurally disordered surface ferromagnetic overlayer.

36 MATERIALS SCIENCE↗

Local atomic structure and Ni nanophase segregation in Zn 1-x Ni x S thin films

Here, the local atomic structure of Zn 1-x Ni x S thin films was investigated using X-ray absorption spectroscopy. The films were grown using RF-sputtering at atomic concentrations x = 0.00, x = 0.04, x = 0.08 and x = 0.14. X-ray diffraction shows that the lattice parameter contracts with increasing Ni concentration, consistent with the smaller atomic radii of Ni compared to that one of Zn. Optical absorption reveals a reduction of the bandgap as Ni concentration increases, except for sample x = 0.14 where a complex behavior is observed. Results from X-ray absorption near edge structure (XANES) spectroscopy indicate a shift in the valence state of Ni for the x = 0.14 sample. The analysis of the extended X-ray absorption fine structure (EXAFS) spectra indicate a contraction of ~0.7 Å in the Ni–S bond distance when compared to the Zn–S bond length, which generates local lattice distortions and an increment of the static disorder as the Ni concentration increases. The EXAFS results for sample x = 0.14 show the presence of a Zn 1-x Ni x S phase and a nanoscopic metallic Ni phase with domain sizes below the diffraction limit. These results reveal that the local atomic structure differs in a significant manner from the average crystalline structure, implying its importance for the determination of the electronic properties of this material.

36 MATERIALS SCIENCE↗