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At least 505 records · Page 28

Semiconductor Thermal and Electrical Properties Decoupled by Localized Phonon Resonances

Abstract Thermoelectric materials convert heat into electricity through thermally driven charge transport in solids or vice versa for cooling. To compete with conventional energy‐conversion technologies, a thermoelectric material must possess the properties of both an electrical conductor and a thermal insulator. However, these properties are normally mutually exclusive because of the interconnection between scattering mechanisms for charge carriers and phonons. Recent theoretical investigations on sub‐device scales have revealed that nanopillars attached to a membrane exhibit a multitude of local phonon resonances, spanning the full spectrum, that couple with the heat‐carrying phonons in the membrane and cause a reduction in the in‐plane thermal conductivity, with no expected change in the electrical properties because the nanopillars are outside the pathway of voltage generation and charge transport. Here this effect is demonstrated experimentally for the first time by investigating device‐scale suspended silicon membranes with GaN nanopillars grown on the surface. The nanopillars cause up to 21% reduction in the thermal conductivity while the power factor remains unaffected, thus demonstrating an unprecedented decoupling in the semiconductor's thermoelectric properties. The measured thermal conductivity behavior for coalesced nanopillars and corresponding lattice‐dynamics calculations provide evidence that the reductions are mechanistically tied to the phonon resonances. This finding paves the way for high‐efficiency solid‐state energy recovery and cooling.

Spann, Bryan T.↗

Characterization of carrier behavior in photonically excited 6H silicon carbide exhibiting fast, high voltage, bulk transconductance properties

Abstract Unabated, worldwide trends in CO 2 production project growth to > 43-BMT per year over the next two decades. Efficient power electronics are crucial to fully realizing the CO 2 mitigating benefits of a worldwide smart grid (~ 18% reduction for the United States alone). Even state-of-the-art SiC high voltage junction devices are inefficient because of slow transition times (~ 0.5-μs) and limited switching rates at high voltage (~ 20-kHz at ≥ 15-kV) resulting from the intrinsically limited charge carrier drift speed (< 2 × 10 7 -cm-s −1 ). Slow transition times and limited switch rates waste energy through transition loss and hysteresis loss in external magnetic components. Bulk conduction devices, where carriers are generated and controlled nearly simultaneously throughout the device volume, minimize this loss. Such devices are possible using below bandgap excitation of semi-insulating (SI) SiC single crystals. We explored carrier dynamics with a 75-fs single wavelength pump/supercontinuum probe and a modified transient spectroscopy technique and also demonstrated a new class of efficient, high-speed, high-gain, bi-directional, optically-controlled transistor-like power device. At a performance level six times that of existing devices, for the first time we demonstrated prototype operation at multi-10s of kW and 20-kV, 125-kHz in a bulk conduction transistor-like device using direct photon-carrier excitation with below bandgap light.

36 MATERIALS SCIENCE↗

NASA Tech Briefs, October 2005

Topics covered include: Insect-Inspired Optical-Flow Navigation Sensors; Chemical Sensors Based on Optical Ring Resonators; A Broad-Band Phase-Contrast Wave-Front Sensor; Progress in Insect-Inspired Optical Navigation Sensors; Portable Airborne Laser System Measures Forest-Canopy Height; Deployable Wide-Aperture Array Antennas; Faster Evolution of More Multifunctional Logic Circuits; Video-Camera-Based Position-Measuring System; N-Type delta Doping of High-Purity Silicon Imaging Arrays; Avionics System Architecture Tool; Updated Chemical Kinetics and Sensitivity Analysis Code; Predicting Flutter and Forced Response in Turbomachinery; Upgrades of Two Computer Codes for Analysis of Turbomachinery; Program Facilitates CMMI Appraisals; Grid Visualization Tool; Program Computes Sound Pressures at Rocket Launches; Solar-System Ephemeris Toolbox; Data-Acquisition Software for PSP/TSP Wind-Tunnel Cameras; Corrosion-Prevention Capabilities of a Water-Borne, Silicone-Based, Primerless Coating; Sol-Gel Process for Making Pt-Ru Fuel-Cell Catalysts; Making Activated Carbon for Storing Gas; System Regulates the Water Contents of Fuel-Cell Streams; Five-Axis, Three-Magnetic-Bearing Dynamic Spin Rig; Modifications of Fabrication of Vibratory Microgyroscopes; Chamber for Growing and Observing Fungi; Electroporation System for Sterilizing Water; Thermoelectric Air/Soil Energy-Harvesting Device; Flexible Metal-Fabric Radiators; Actuated Hybrid Mirror Telescope; Optical Design of an Optical Communications Terminal; Algorithm for Identifying Erroneous Rain-Gauge Readings; Condition Assessment and End-of-Life Prediction System for Electric Machines and Their Loads; Lightweight Thermal Insulation for a Liquid-Oxygen Tank; Stellar Gyroscope for Determining Attitude of a Spacecraft; and Lifting Mechanism for the Mars Explorer Rover.

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NASA Tech Briefs, November 2004

Topics include: Multifunction Imaging and Spectroscopic Instrument; Position-Finding Instrument Built Around a Magnetometer; Improved Measurement of Dispersion in an Optical Fiber; Probe for Sampling of Interstitial Fluid From Bone; Neuropsychological Testing of Astronauts; Method of Calibration for a Large Cathetometer System; Four-Channel PC/104 MIL-STD-1553 Circuit Board; Improved Method of Locating Defects in Wiring Insulation; Strobe Traffic Lights Warn of Approaching Emergency Vehicles; Improved Timing Scheme for Spaceborne Precipitation Radar; Concept for Multiple-Access Free-Space Laser Communications; Variable Shadow Screens for Imaging Optical Devices; Verifying Diagnostic Software; Initial Processing of Infrared Spectral Data; Activity-Centric Approach to Distributed Programming; Controlling Distributed Planning; New Material for Surface-Enhanced Raman Spectroscopy; Treated Carbon Nanofibers for Storing Energy in Aqueous KOH; Advanced Infant Car Seat Would Increase Highway Safety; Development of Biomorphic Flyers; Second-Generation Six-Limbed Experimental Robot; Miniature Linear Actuator for Small Spacecraft; Process for Making Single-Domain Magnetite Crystals; A New Process for Fabricating Random Silicon Nanotips; Resin-Transfer-Molding of a Tool Face; Improved Phase-Mask Fabrication of Fiber Bragg Gratings; Tool for Insertion of a Fiber-Optic Terminus in a Connector; Nanofluidic Size-Exclusion Chromatograph; Lightweight, Low-CTE Tubes Made From Biaxially Oriented LCPs; Using Redundancy To Reduce Errors in Magnetometer Readings; Compact Instrument for Measuring Profile of a Light Beam; Multilayer Dielectric Transmissive Optical Phase Modulator; Second-Generation Multi-Angle Imaging Spectroradiometer; Real-Time Adaptive Color Segmentation by Neural Networks; Research and Development in Optical Communications; Tests of Multibeam Scintillation Mitigation on Laser Uplinks; and Spaceborne Infrared Atmospheric Sounder.

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Experimental Study of Arcing on High-voltage Solar Arrays

The main obstacle to the implementation of a high-voltage solar array in space is arcing on the conductor-dielectric junctions exposed to the surrounding plasma. One obvious solution to this problem would be the installation of fully encapsulated solar arrays which were not having exposed conductors at all. However, there are many technological difficulties that must be overcome before the employment of fully encapsulated arrays will turn into reality. An alternative solution to raise arc threshold by modifications of conventionally designed solar arrays looks more appealing, at least in the nearest future. A comprehensive study of arc inception mechanism [1-4] suggests that such modifications can be done in the following directions: i) to insulate conductor-dielectric junction from a plasma environment (wrapthrough interconnects); ii) to change a coverglass geometry (overhang); iii) to increase a coverglass thickness; iiii) to outgas areas of conductor-dielectric junctions. The operation of high-voltage array in LEO produces also the parasitic current power drain on the electrical system. Moreover, the current collected from space plasma by solar arrays determines the spacecraft floating potential that is very important for the design of spacecraft and its scientific apparatus. In order to verify the validity of suggested modifications and to measure current collection five different solar array samples have been tested in large vacuum chamber. Each sample (36 silicon based cells) consists of three strings containing 12 cells connected in series. Thus, arc rate and current collection can be measured on every string independently, or on a whole sample when strings are connected in parallel. The heater installed in the chamber provides the possibility to test samples under temperature as high as 80 C that simulates the LEO operational temperature. The experimental setup is described below.

Vayner, Boris↗

Experimental Study of Arcing on High-Voltage Solar Arrays

The main obstacle to the implementation of a high-voltage solar array in space is arcing on the conductor-dielectric junctions exposed to the surrounding plasma. One obvious solution to this problem would be the installation of fully encapsulated solar arrays which were not having exposed conductors at all. However, there are many technological difficulties that must be overcome before the employment of fully encapsulated arrays will turn into reality. An alternative solution to raise arc threshold by modifications of conventionally designed solar arrays looks more appealing, at least in the nearest future. A comprehensive study of arc inception mechanism suggests that such modifications can be done in the following directions: 1) To insulate conductor-dielectric junction from a plasma environment (wrapthrough interconnects); 2) To change a coverglass geometry (overhang); 3) To increase a coverglass thickness; 4) To outgas areas of conductor-dielectric junctions. The operation of high-voltage array in LEO produces also the parasitic current power drain on the electrical system. Moreover, the current collected from space plasma by solar arrays determines the spacecraft floating potential that is very important for the design of spacecraft and its scientific apparatus. In order to verify the validity of suggested modifications and to measure current collection five different solar array samples have been tested in a large vacuum chamber. Each sample (36 silicon based cells) consists of three strings containing 12 cells connected in series. Thus, arc rate and current collection can be measured on every string independently, or on a whole sample when strings are connected in parallel. The heater installed in the chamber provides the possibility to test samples under temperature as high as 80 C that stimulates the LEO operational temperature. The experimental setup is described below.

Vayner, Boris↗

Effect of Auger recombination on transient optical properties in XUV and soft X-ray irradiated silicon nitride

Spatially encoded measurements of transient optical transmissivity became a standard tool for temporal diagnostics of free-electron-laser (FEL) pulses, as well as for the arrival time measurements in X-ray pump and optical probe experiments. The modern experimental techniques can measure changes in optical coefficients with a temporal resolution better than 10 fs. This, in an ideal case, would imply a similar resolution for the temporal pulse properties and the arrival time jitter between the FEL and optical laser pulses. However, carrier transport within the material and out of its surface, as well as carrier recombination may, in addition, significantly decrease the number of carriers. This would strongly affect the transient optical properties, making the diagnostic measurement inaccurate. Below we analyze in detail the effects of those processes on the optical properties of XUV and soft X-ray irradiated Si 3 N 4 , on sub-picosecond timescales. Si 3 N 4 is a wide-gap insulating material widely used for FEL pulse diagnostics. Theoretical predictions are compared with the published results of two experiments at FERMI and LCLS facilities, and with our own recent measurement. The comparison indicates that three body Auger recombination strongly affects the optical response of Si 3 N 4 after its collisional ionization stops. By deconvolving the contribution of Auger recombination, in future applications one could regain a high temporal resolution for the reconstruction of the FEL pulse properties measured with a Si 3 N 4 -based diagnostics tool.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

RFID and Memory Devices Fabricated Integrally on Substrates

Electronic identification devices containing radio-frequency identification (RFID) circuits and antennas would be fabricated integrally with the objects to be identified, according to a proposal. That is to say, the objects to be identified would serve as substrates for the deposition and patterning of the materials of the devices used to identify them, and each identification device would be bonded to the identified object at the molecular level. Vacuum arc vapor deposition (VAVD) is the NASA derived process for depositing layers of material on the substrate. This proposal stands in contrast to the current practice of fabricating RFID and/or memory devices as wafer-based, self-contained integrated-circuit chips that are subsequently embedded in or attached to plastic cards to make smart account-information cards and identification badges. If one relies on such a chip to store data on the history of an object to be tracked and the chip falls off or out of the object, then one loses both the historical data and the means to track the object and verify its identity electronically. Also, in contrast is the manufacturing philosophy in use today to make many memory devices. Today s methods involve many subtractive processes such as etching. This proposal only uses additive methods, building RFID and memory devices from the substrate up in thin layers. VAVD is capable of spraying silicon, copper, and other materials commonly used in electronic devices. The VAVD process sprays most metals and some ceramics. The material being sprayed has a very strong bond with the substrate, whether that substrate is metal, ceramic, or even wood, rock, glass, PVC, or paper. An object to be tagged with an identification device according to the proposal must be compatible with a vacuum deposition process. Temperature is seldom an issue as the substrate rarely reaches 150 F (66 C) during the deposition process. A portion of the surface of the object would be designated as a substrate for the deposition of the device. By use of a vacuum arc vapor deposition apparatus, a thin electrically insulating film would first be deposited on the substrate. Subsequent layers of materials would then be deposited and patterned by use of known integrated-circuit fabrication techniques. The total thickness of the deposited layers could be much less than the 100- m thickness of the thinnest state-of-the-art self-contained microchips. Such a thin deposit could be readily concealed by simply painting over it. Both large vacuum chambers for production runs and portable hand-held devices for in situ applications are available.

Schramm, Harry F.↗

Development of a High Frequency Class-A Amplifier for High Temperature Wireless Microsystems based on a Silicon Carbide Static Induction Transistor

Next generation gas turbine engine health monitoring for high performance jet engine-powered aircraft will incorporate integrated microelectronic sensors specifically designed to enhance aircraft functionality, engine efficiency, and safety. Temperature, air flow and pressure associated with the gas path as well as emissions from the engine correlate to the state of the combustor and other engine health conditions. Monitoring these parameters accurately requires positioning electronic sensors in the hot zone of the gas turbine engine, which exposes them to temperatures in excess of 400ºC. At these temperatures, signal amplification is needed at the transducer level to distinguish the desired measured signal from the significant electronic noise generated by the harsh environment. In this presentation, we report on the simulation, development, fabrication, and testing on a high temperature Class-A amplifier which utilizes a 4H-SiC Static Induction Transistor (SIT) as the active device and input/output matching and DC bias networks comprised of thin-film spiral inductors, metal-insulator-metal capacitors, and thick film chip resistors. A small signal model that emulates the operation of the 4H-SiC SIT from 25 to 400ºC, with an emphasis on operation at 400οC, was utilized. Measurements were performed from 25 to 400ºC to generate current-voltage curves, capacitive transistor characteristics and high frequency scattering parameters (S-parameters). The measured data was used to extrapolate the transconductance, gm, as a function of temperature for model development. Circuit simulation tools were used to generate S-parameters, which were compared to the measured values. At 400οC, a maximum difference between measured and simulated S-parameters for frequencies from 20 to 100 MHz were 3.84%, 0.68%, 10.61%, and 3.26% for S21, S12, S11, and S22, respectively. The average transit frequency, ft, was calculated from measured values to be 197.8 MHz, while the simulated value from the model was found to be 200 MHz. The Amplifier’s S-parameters were recorded at 20-100 MHz over a temperature range of 25-400ºC and show a gain of approximately 15.8 and 5.80 dBm at 25 and 400ºC, respectively. The input and output reflection coefficients at 50 MHz and 400ºC were -18.5 and -15.2 dB, respectively. The noise figure and phase noise were measured over the temperature range of 25-400ºC and recorded. The noise figure increased 21% at 50 MHz over the temperature range, while the 1 kHz offset of the phase noise remained below -110 dB. The stability factor, K, calculated with measured and simulated data demonstrates unconditional stability over the frequency range at 400ºC. Lastly, the 1-dB compression point was measured at 50 MHz and 400ºC with an approximated output of 9.5 dBm.

SiC↗

Characterization of Space Shuttle Thermal Protection System (TPS) Materials for Return-to-Flight following the Shuttle Columbia Accident Investigation

During the Space Shuttle Columbia Accident Investigation, it was determined that a large chunk of polyurethane insulating foam (= 1.67 lbs) on the External Tank (ET) came loose during Columbia's ascent on 2-1-03. The foam piece struck some of the protective Reinforced Carbon-Carbon (RCC) panels on the leading edge of Columbia's left wing in the mid-wing area. This impact damaged Columbia to the extent that upon re-entry to Earth, superheGed air approaching 3,000 F caused the vehicle to break up, killing all seven astronauts on board. A paper after the Columbia Accident Investigation highlighted thermal analysis testing performed on External Tank TPS materials (1). These materials included BX-250 (now BX-265) rigid polyurethane foam and SLA-561 Super Lightweight Ablator (highly-filled silicone rubber). The large chunk of foam from Columbia originated fiom the left bipod ramp of the ET. The foam in this ramp area was hand-sprayed over the SLA material and various fittings, allowed to dry, and manually shaved into a ramp shape. In Return-to-Flight (RTF) efforts following Columbia, the decision was made to remove the foam in the bipod ramp areas. During RTF efforts, further thermal analysis testing was performed on BX-265 foam by DSC and DMA. Flat panels of foam about 2-in. thick were sprayed on ET tank material (aluminum alloys). The DSC testing showed that foam material very close to the metal substrate cured more slowly than bulk foam material. All of the foam used on the ET is considered fully cured about 21 days after it is sprayed. The RTF culminated in the successful launch of Space Shuttle Discovery on 7-26-05. Although the flight was a success, there was another serious incident of foam loss fiom the ET during Shuttle ascent. This time, a rather large chunk of BX-265 foam (= 0.9 lbs) came loose from the liquid hydrogen (LH2) PAL ramp, although the foam did not strike the Shuttle Orbiter containing the crew. DMA testing was performed on foam samples taken fiom a simulated PAL ramp panel. It was found that the smooth rind on the foam facing the cable tray did significantly affect the properties of foam at the PAL ramp surface. The smooth rind increased the storage modulus E' of the foam as much as 20- 40% over a temperature range of -145 to 95 C. Because of foam loss fiom the PAL ramp, future Shuttle flights were grounded indefinitely to allow further testing to better understand foam properties. The decision was also made to remove foam from the LH2 PAL, ramp. Other RTF efforts prior to the launch of Discovery included

Wingard, Doug↗

Increasing the Hot‐Electron Driven Hydrogen Evolution Reaction Rate on a Metal‐Free Graphene Electrode

Abstract Recently, it has been shown that a semiconductor–insulator–graphene device can drive the hydrogen evolution reaction (HER) at the graphene surface with a reduced onset potential by injecting hot electrons into graphene. However, the catalytic properties of graphene are limited by the large hydrogen adsorption energy and lack of electrochemically active sites. To address these limitations, a n ‐silicon/insulator/plasma etched graphene device is investigated, where a dry etch process is used to increase the number of active sites on the graphene by creating a greater number of active edge sites, increasing hydrogen adsorption at a given potential. This has been shown to improve the properties of devices with cold electrons. However, here it is shown that this approach can improve the HER rate with hot electrons. The electrons injected into the graphene from the silicon shift the onset potential of HER by as high as ≈0.8 V reaching a current density of 90 mA cm −2 at an overpotential of ‐0.5 V versus RHE. Furthermore, the comparison between device with pristine graphene shows a ≈2X improvement in current density at high overpotentials. This result shows that hot‐electron devices can be improved by modifying the catalytically active sites without metal catalysts.

Chae, Hyun Uk↗

Method for Molding Planar Billet of Thermally Insulative Material Into Predetermined Non-Planar Shape

A method and apparatus is discussed for molding thermal protection system (TPS) tiles for spacecraft. The apparatus and method include a bottom mold member defining a mold surface shaped like a surface of the spacecraft, e.g., the nose cap of wing leading edge, sought to be thermally protected. A flat billet of TPS material is positioned over the periphery of the mold surface, and a hollow weight element that has a periphery configured like the periphery of the mold surface is positioned on the billet. The billet is then heated in accordance with a predetermined heating regime, and during the heating process the weight of the weight element causes the billet to deform to assume the shape of the mold surface. If desired, a TUFI coating is impregnated into the billet prior to heating, and the coating is sintered to the billet during heating. After heating, a composite matrix material, e.g., a graphite or fiberglass cloth which is impregnated with epoxy or polimide, is bonded to the now-shaped tile to support the tile. Silicone can then be impregnated into the now-formed tile to provide flexibility of the tile.

Kolodziej, Paul↗

Practical aspects of photovoltaic technology, applications and cost (revised)

The purpose of this text is to provide the reader with the background, understanding, and computational tools needed to master the practical aspects of photovoltaic (PV) technology, application, and cost. The focus is on stand-alone, silicon solar cell, flat-plate systems in the range of 1 to 25 kWh/day output. Technology topics covered include operation and performance of each of the major system components (e.g., modules, array, battery, regulators, controls, and instrumentation), safety, installation, operation and maintenance, and electrical loads. Application experience and trends are presented. Indices of electrical service performance - reliability, availability, and voltage control - are discussed, and the known service performance of central station electric grid, diesel-generator, and PV stand-alone systems are compared. PV system sizing methods are reviewed and compared, and a procedure for rapid sizing is described and illustrated by the use of several sample cases. The rapid sizing procedure yields an array and battery size that corresponds to a minimum cost system for a given load requirement, insulation condition, and desired level of service performance. PV system capital cost and levelized energy cost are derived as functions of service performance and insulation. Estimates of future trends in PV system costs are made.

Rosenblum, L.↗

Actively Cooled SLMS(TM) Technology for HEL Applications

Mr. Jacoby is the Chief Scientist for Schafer's Lightweight Optical Systems business area with twenty four years experience in laser and optical systems for space and military applications. He and colleague Dr. Goodman conceived and developed Silicon Lightweight Mirrors (SLMS(TM)) technologies for space applications from the extreme UV to FAR IR wavelengths. Schafer has demonstrated two different methods for actively cooling our Silicon Lightweight Mirrors (SLMS(TM)) technology. Direct internal cooling was accomplished by flowing liquid nitrogen through the continuous open cell core of the SLMS(TM) mirror. Indirect external cooling was accomplished by flowing liquid nitrogen through a CTE matched Cesic square-tube manifold that was bonded to the back of the mirror in the center. Testing was done in the small 4-foot thermal/vacuum chamber located at the NASA/MSFC X-Ray Calibration Facility. Seven thermal diodes were located over the front side of the 5 inch diameter mirror and one was placed on the outlet side of the Cesic manifold. Results indicate that the mirror reaches steady state at 82K in less than four minutes for both cooling methods. The maximum temperature difference of the eight diodes was less than 200 mK when the mirror was internally cooled and covered with MLI to insulate it from the large 300 K aluminum plate that was used to mount it.

Jacoby, Marc T.↗

Development of a Thin-Film Solar Cell Interconnect for the Powersphere Concept

Dual junction amorphous silicon (a-Si) solar cells produced on polyimide substrate have been selected as the best candidate to produce a lightweight solar array for the PowerSphere program. The PowerSphere concept features a space-inflatable, geodetic solar array approximately 0.6 meters in diameter and capable of generating about 20W of electrical power. Trade studies of various wiring concepts and connection methods led to an interconnect design with a copper contact that wraps around the edge, to the back of the solar cell. Applying Plasma Vapor Deposited (PVD) copper film to both sides and the edge of the solar cell produces the wrap around contact. This procedure results in a contact pad on the back of the solar cell, which is then laser welded to a flex circuit material. The flex circuit is constructed of copper in a custom designed routing pattern, and then sandwiched in a Kapton insulation layer. The flex circuit then serves as the primary power distribution system between the solar cells and the spacecraft. Flex circuit material is the best candidate for the wiring harness because it allows for low force deployment of the solar cells by the inflatable hinges on the PowerSphere. An additional frame structure, fabricated and assembled by ILC Dover, will reinforce the wrap around contact-flex blanket connection, thus providing a mechanically robust solar cell interconnect for the PowerSphere multifunctional program. The PowerSphere team will use the wraparound contact design approach as the primary solution for solar cell integration and the flex blanket for power distribution.

Simburger, Edward J.↗

Characterization of Highly Thermally Conductive Organic Substrates for a Double-Sided Cooled Power Module

Abstract Silicon-Carbide (SiC) power devices have become a promising option for traditional Silicon (Si) due to the superior material properties. To fully take advantage of the SiC devices, a high-performance power device packaging solution is necessary. This study proposes a cost-effective double-sided cooled (DSC) 1.2 kV SiC half-bridge power module using organic epoxy-resin composite dielectric (ERCD) substrates. The high mechanical and thermal performance of the power module is achieved by the low-modulus, moderate thermal conductivity, and relatively thin (120 μm) layer of ERCD material compared with traditional metal-clad ceramic approaches. This novel organic dielectric can withstand high voltage (5 kV @ 120 μm) and operate up to 250°C continuously, which is indispensable for high power applications. The thermal modeling results show that the equivalent thermal resistance junction-to-case (Rjc_eq) of the DSC power module using dual direct bonded copper (DBC) is 17% higher than the dual ERCD configuration. Furthermore, a non-insulated DSC power module concept is proposed for maximizing thermal performance by considering thermal vias in the ERCD substrate and direct-soldered heat sink. A thought process for optimization of thermal via design is demonstrated and it shows up to 24% of improvement on thermal performance compared with the insulated DSC power module.

Double-sided cooling, epoxy-resin composite dielec↗

Nanoscale Materials Make for Large-Scale Applications

Since its dawning days, NASA has been at the forefront of developing and improving materials for aerospace applications. In particular, NASA requires dramatic advancements in material properties to enhance the performance, robustness, and reliability of its launch vehicles, spacecraft, and the International Space Station. Such advancements over the years include noise-abatement materials, fire-resistant fibers, heat-absorbing insulation, and light-but-strong moldable composites. In 1991, a new carbon fiber called a carbon nanotube was discovered and fully substantiated by a Japanese electron microscopist. Its dramatic strength and low density (20 times the tensile strength and one-sixth the density of steel) were turning the heads of materials scientists and engineers all around the world, including those who developed equipment for NASA. While NASA did not invent the carbon nanotube, it is working to advance the fibrous material for widespread, low-cost application in sending humans beyond low-Earth orbit, well into the outer reaches of the universe. Carbon nanotubes have the potential to reduce spacecraft weight by 50 percent or more, by replacing the heavier copper wires currently used, according to NASA scientists. Furthermore, NASA researchers have reported a new method for producing integrated circuits using carbon nanotubes instead of copper for interconnects. This technology has the capability to extend the life of the silicon chip industry by 10 years. Because of this growing interest in carbon nanotubes and their perpetual possibilities, NASA has funded both internal and external research in this field.

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III-V/Si Tandem Cells Utilizing Interdigitated Back Contact Si Cells and Varying Terminal Configurations

Integrating wide-bandgap III-V with Si solar cells has been shown to yield higher efficiencies than Si alone: As also presented at this conference, four-terminal efficiencies exceeding 32% have been attained. In this contribution, independent and electrically connected operation of the subcells in such tandem cells is examined. The optics of the tandem cell change significantly if a conducting interconnect, rather than an insulating glass slide, is required between the subcells. These effects are studied, and optically optimized structures for different types of tandem cell operation are presented. It is found that minimizing reflection at the conductive interface between the two cells while maintaining conductivity is the key challenge faced in such devices.

41 EE - Solar Energy Technologies Office (EE-4S)↗