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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 505 records · Page 28
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Changes in dislocation punching behavior due to hydrogen-seeded helium bubble growth in tungsten

The accumulation of gas atoms in tungsten is a topic of long-standing interest to the plasma-facing materials community due the metal's use as a divertor material in some tokamak fusion reactors. The nucleation and growth of He/H gas bubbles (along with their isotopes) can result from impinging fluxes of these gases which give rise to damage at the W divertor surface. The inclusion of He or H in W has been studied extensively by the community, finding that He bubbles modify the surface through periodic dislocation punching and bursting mechanisms while H bubbles impact the metal through plastic-strain induced material failure. However, the mechanisms which are present during the combined flux of both He and H is not well-studied atomistically. Motivated by this, an atomistic modeling study is conducted using molecular dynamics to assess the behavior of mixed concentration He:H bubbles in W. Here we find that the introduction of H into a growing He bubble results in a dramatic change in the nature and presence of dislocation loops which are typically generated via dislocation punching in over-pressurized He bubbles. Most notably, at high H concentrations, there is a switchover in energetic favorability from glissile 1/2<111> dislocations to sessile <100> dislocations. This thermodynamic crossover could imply a significant reduction in W surface morphology changes than with pure He bubbles and, additionally, we show this to have implications on the trapping of H in the bubbles and their associated dislocations.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Lignin’s Indispensable role in orchestrating seed stone formation: Insights from jujuba, peach and pear with future prospective on pitless fruits

A hard endocarp (i.e., stone) inside fruit is a characteristic of drupe fruits such as jujube, peach, mango, etc. Hard stone significantly affects the quality and downstream processing of fruits. The complex aromatic polymer lignin deposition in the secondary cell wall determines stone hardness. Lignin comprises phenylpropanoid units formed by hydroxycinnamoyl alcohol, which includes coniferyl, sinapyl, and p-coumaroyl alcohols. Lignin biosynthesis pathway involves a series of complex enzymatic reactions initiated from phenylalanine ammonia lyase and ends up polymerizing lignin monomers by laccase and peroxidase enzymes. Phytohormones, particularly auxin, gibberellins, and Ca²⁺ signaling, further modulate endocarp lignification by regulating transcriptional networks and lignin biosynthetic genes, thereby fine-tuning secondary cell wall thickening and stone hardness in drupe fruits. Lignin biosynthesis is controlled by both structural genes and transcriptional regulators. The structural genes encoding lignin biosynthetic enzymes include LAC12–1, PAL2, C4H, C3H, CSE, CCoAOMT, F5H, CAD, and PRX1. In addition, several transcription factors regulating secondary cell wall and lignin deposition, such as MYB24, bZIP48, and bZIP33 play key regulatory roles. Conversely, delignification or suppression of stone formation is associated with transcription factors (Pistillata, MYB32, FUL, and REPLUMLESS) and post-transcriptional regulators, including miR397a, miR31-3p, and miR8-5p. Accurate alteration in the expression of these genes will result in the attainment of stoneless fruits for cheap and hazel-free downstream processing.

Fruit endocarp↗
DOE OSTI2020

Defect-Seeded Atomic Layer Deposition of Metal Oxides on the Basal Plane of 2D Layered Materials

Atomic layer deposition (ALD) on mechanically exfoliated 2D layered materials spontaneously produces network patterns of metal oxide nanoparticles in triangular and linear deposits on the basal surface. The network patterns formed under a range of ALD conditions and were independent of the orientation of the substrate in the ALD reactor. The patterns were produced on MoS 2 or HOPG when either tetrakis(dimethylamido)titanium or bis(ethylcyclopentadienyl)manganese were used as precursors, suggesting that the phenomenon is general for 2D materials. Transmission electron microscopy revealed the presence, prior to deposition, of dislocation networks along the basal plane of mechanically exfoliated 2D flakes, indicating that periodical basal plane defects related to disruptions in the van der Waals stacking of layers, such as perfect line dislocations and triangular extended stacking faults networks, introduce a surface reactivity landscape that leads to the emergence of patterned deposition.

36 MATERIALS SCIENCE↗