High-frequency noise in germanium-silicon n-n heterojunctions
HF admittance and noise in foward-biased majority carrier Ge-Si n-n heterojunctions and Schottky barrier
Neudeck, G. W.↗
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Ohmic contacts to solution-grown gallium arsenide
Carrier concentration profiles and surface resistance of Ohmic contacts to solution epitaxial n-type GaAs wafers measured by Schottky barrier capacitance
Day, G. F.↗
Research on low voltage electroluminescent devices with storage, phase 3 Final technical report
Production and optical properties of zinc selenide aluminum arsenide heterojunction and platinum zinc selenide Schottky junction
Hanlet, J. M.↗
The characterization of bare and cesiated CVD 75 percent tungsten/25 percent rhenium electrodes
Bare and cesiated work function of covapor deposited tungsten-rhenium electrodes from vacuum emission vehicle Schottky plots
Campbell, A. E.↗
High temperature gallium phosphide rectifiers
Development of high reverse breakdown voltage and low forward voltage drop stability in high power Schottky GaP rectifier for high temperature application is reported.
Craford, M. G.↗
Optimized silicon solar cells for space exploration power systems
A program is described aimed at designing and fabricating improved silicon solar cells for a range of missions extending from 0.1 to 15 astronomical units (Mercury to Jupiter). For missions lying inside Earth radius (Mercury, Venus) the major cell property required was very low series resistance, allowing high curve fill factor to be maintained at the higher intensities. For the Mercury mission, the temperature of the cell had to be kept low. This was achieved by reflecting more of the incident sunlight by use of large area front contacts. For the outer missions (Mars, the Asteroid belts and Jupiter) the formation of a Schottky barrier at the back contact had to be avoided (by use of a P+ layer under the back contact) and the excess leakage current of the PN junction had to be reduced. Optimum grid patterns were also derived and used for these missions.
Iles, P. A.↗
Fundamental studies of the metallurgical, electrical, and optical properties of gallium phosphide and gallium phosphide alloys
Abstracts, bibliographic data, oral presentations, and published papers on (1) Diffusion of Sulfur in Gallium Phosphide and Gallium Arsenide, and (2) Properties of Gallium Phosphide Schottky Barrier Rectifiers for Use at High Temperature are presented.
Source record↗
A millimeter-wave pumped X-band uncooled parametric amplifier.
GaAs Schottky barrier varactors with a cutoff frequency of 800 GHz are used in a balanced diode-type parametric amplifier operating with a signal frequency at 7.5 GHz. The room-temperature parameters of the amplifier are a gain of 15 dB, a bandwidth of 500 MHz, and an excess noise temperature of 63 K (a noise figure of 0.86 dB).
Dickens, L. E.↗
Microwave device investigations
Materials, devices and novel schemes for generation, amplification and detection of microwave and millimeter wave energy are studied. Considered are: (1) Schottky-barrier microwave devices; (2) intermodulation products in IMPATT diode amplifiers; and (3) harmonic generation using Read diode varactors.
Choudhury, K. K. D.↗
Ku-band miniature modulators
Ku-band microminiature modulators were designed to convert a 10 mW signal at 400 MHz to a 10 mW signal at 15 GHz. The designs incorporate gallium arsenide Schottky barrier varactors used in upper-sideband up-converters. The use of Ku-band microstrip circulators and hairpin resonator bandpass filters at 2.1 GHz and 2.5 GHz is included. The design and fabrication of a single up-conversion unit with a double up-conversion unit are compared. Various filter configurations are studies, and the use of both alumina and quartz substrates are considered. The various impedance matching networks are evaluated using computer aided design techniques.
Ernst, R. L.↗
Electron spin resonance of ultraviolet radiation induced defects in ZnO thermal control coating pigment.
Electron spin resonance measurements on variously treated zinc oxide powders reveal that the resonance signal at g = 1.956 is due to one electron trapped oxygen ion vacancy level, at a depth of (0.31 plus or minus 0.02) eV below the conduction band. The electrons at this level are delocalized. Schottky barrier influences nearly the entire bulk of the powder sample, and the bending of the bands caused by chemisorbed oxygen puts the vacancy level above the Fermi level almost through the entire bulk.
Mookherji, T.↗
Integrated-circuit balanced parametric amplifier
Amplifier, fabricated on single dielectric substrate, has pair of Schottky barrier varactor diodes mounted on single semiconductor chip. Circuit includes microstrip transmission line and slot line section to conduct signals. Main features of amplifier are reduced noise output and low production cost.
Dickens, L. E.↗
Laser-to-electricity energy converter for short wavelengths
Short-wavelength energy converter can be made using Schottky barrier structure. It has wider band gap than p-n junction silicon semiconductors, and thus it has improved response at wavelengths down to and including ultraviolet region.
Stirn, R. J.↗
Low-noise room-temperature and cryogenic mixers for 80-120 GHz
A description is given of two new mixers designed to operate in the 80-120-GHz range on 36-ft radio telescope. It is shown that for a hard-driven diode the parasitic resistance and capacitance are the primary factors influencing the design of the diode mount. A room-temperature mixer is described which achieves a single-sideband (SSB) conversion loss (L) of 5.5 dB, and a SSB noise temperature (Tm) of 500 K (excluding the IF contribution) with a 1.4-GHz IF. A cryogenically cooled version, using a quartz structure to support the diode chip and contact whisker, achieves values of L = 5.8 dB and Tm = 300 K with a 4.75-GHz IF. The mixers use high-quality Schottky-barrier diodes in a one-quarter-height waveguide mount.
Kerr, A. R.↗
Boron Arsenide and Boron Phosphide for High Temperature and Luminescent Devices
The crystal growth of boron arsenide and boron phosphide in the form of bulk crystals and epitaxial layers on suitable substrates is discussed. The physical, chemical, and electrical properties of the crystals and epitaxial layers are examined. Bulk crystals of boron arsenide were prepared by the chemical transport technique, and their carrier concentration and Hall mobility were measured. The growth of boron arsenide crystals from high temperature solutions was attempted without success. Bulk crystals of boron phosphide were also prepared by chemical transport and solution growth techniques. Techniques required for the fabrication of boron phosphide devices such as junction shaping, diffusion, and contact formation were investigated. Alloying techniques were developed for the formation of low-resistance ohmic contacts to boron phosphide. Four types of boron phosphide devices were fabricated: (1) metal-insulator-boron phosphide structures, (2) Schottky barriers; (3) boron phosphide-silicon carbide heterojunctions; and (4) p-n homojunctions. Easily visible red electroluminescence was observed from both epitaxial and solution grown p-n junctions.
Chu, T. L.↗
Semiconductor electrolyte photovoltaic energy converter
Feasibility and practicality of a solar cell consisting of a semiconductor surface in contact with an electrolyte are evaluated. Basic components and processes are detailed for photovoltaic energy conversion at the surface of an n-type semiconductor in contact with an electrolyte which is oxidizing to conduction band electrons. Characteristics of single crystal CdS, GaAs, CdSe, CdTe and thin film CdS in contact with aqueous and methanol based electrolytes are studied and open circuit voltages are measured from Mott-Schottky plots and open circuit photo voltages. Quantum efficiencies for short circuit photo currents of a CdS crystal and a 20 micrometer film are shown together with electrical and photovoltaic properties. Highest photon irradiances are observed with the GaAs cell.
Anderson, W. W.↗
Second NASA Conference on Laser Energy Conversion
The possible transmission of high power laser beams over long distances and their conversion to thrust, electricity, or other useful forms of energy is considered. Specific topics discussed include: laser induced chemistry; developments in photovoltaics, including modification of the Schottky barrier devices and generation of high voltage emf'sby laser radiation of piezoelectric ceramics; the thermo electronic laser energy converter and the laser plasmadynamics converters; harmonic conversion of infrared laser radiation in molecular gases; and photon engines.
Billman, K. W.↗
Third Working Meeting on Gallium Arsenide Solar Cells
Research results are reported for GaAs Schottky barrier solar cells, GaAlAs/GaAs heteroface solar cells, and GaAlAs graded band gap solar cells. Related materials studies are presented. A systems study for GaAs and Si solar concentrator systems is given.
Walker, G. H.↗