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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 505 records · Page 28
All sourcesNASA NTRSDOE OSTI
DOE OSTI2017

Switching dynamics of the spin density wave in superconducting CeCoIn 5

The ordering wave vector Q of a spin density wave (SDW), stabilized within the superconducting state of CeCoIn 5 in a high magnetic field, has been shown to be hypersensitive to the direction of the field. Q can be switched from a nodal direction of the d-wave superconducting order parameter to a perpendicular node by rotating the in-plane magnetic field through the antinodal direction within a fraction of a degree. In this paper, we address the dynamics of the switching of Q. We use a free-energy functional based on the magnetization density, which describes the condensation of magnetic fluctuations of nodal quasiparticles, and show that the switching process includes closing of the SDW gap at one Q and then reopening the SDW gap at another Q perpendicular to the first one. The magnetic field couples to Q through the spin-orbit interaction. Our calculations show that the width of the hysteretic region of switching depends linearly on the deviation of magnetic field from the critical field associated with the SDW transition, consistent with our thermal conductivity measurements. Finally, the agreement between theory and experiment supports our scenario of the hypersensitivity of the Q phase on the direction of magnetic field, as well as the magnon condensation as the origin of the SDW phase in CeCoIn 5 .

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2017

Pressure-induced switching in ferroelectrics: Phase-field modeling, electrochemistry, flexoelectric effect, and bulk vacancy dynamics

Pressure-induced polarization switching in ferroelectric thin films has emerged as a powerful method for domain patterning, allowing us to create predefined domain patterns on free surfaces and under thin conductive top electrodes. However, the mechanisms for pressure-induced polarization switching in ferroelectrics remain highly controversial, with flexoelectricity, polarization rotation and suppression, and bulk and surface electrochemical processes all being potentially relevant. Here we classify possible pressure-induced switching mechanisms, perform elementary estimates, and study in depth using phase-field modeling. Finally, we show that magnitudes of these effects are remarkably close and give rise to complex switching diagrams as a function of pressure and film thickness with nontrivial topology or switchable and nonswitchable regions.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2018

Switching a Perpendicular Ferromagnetic Layer by Competing Spin Currents

An ultimate goal of spintronics is to control magnetism via electrical means. One promising way is to utilize a current-induced spin-orbit torque (SOT) originating from the strong spin-orbit coupling in heavy metals and their interfaces to switch a single perpendicularly magnetized ferromagnetic layer at room temperature. However, experimental realization of SOT switching to date requires an additional in-plane magnetic field, or other more complex measures, thus severely limiting its prospects. Here we present a novel structure consisting of two heavy metals that delivers competing spin currents of opposite spin indices. Instead of just canceling the pure spin current and the associated SOTs as one expects and corroborated by the widely accepted SOTs, such devices manifest the ability to switch the perpendicular CoFeB magnetization solely with an in-plane current without any magnetic field. Magnetic domain imaging reveals selective asymmetrical domain wall motion under a current. Our discovery not only paves the way for the application of SOT in nonvolatile technologies, but also poses questions on the underlying mechanism of the commonly believed SOT-induced switching phenomenon.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2018

Electronic switching by metastable polarization states in BiFe O 3 thin films

Here, we present an approach to control resistive switching in metal-ferroelectric contacts using a radially symmetric electric field. In ferroelectrics with significant polarization along the corresponding field lines, the field above a critical threshold will induce polarization discontinuity, a corresponding nanoscale volume of space charge, and a conducting junction. We demonstrate this principle using nanoscale polarization switching of a conventional (001)-oriented thin film of BiFeO 3 . Without any optimization, the conducting state created in this regime of resistive switching exhibits local currents of ~1–10nA, approaching the ~100nA threshold required for device implementation [J. Jiang et al., Nat. Mater. 17, 49 (2018)]. The corresponding electronic function is that of a volatile resistive switch, which is directly compatible with neuristor functionality that encodes the functioning basis of an axon [M. D. Pickett et al., Nat. Mater. 12, 114 (2013)]. Phase-field modeling further reveals that in the strongly charged local configuration, BiFeO 3 locally undergoes a rhombohedral-tetragonal (R-T) phase transition, in part due to substantial piezoelectric expansion of the lattice. The estimated local charge density can be as high as ~10 21 cm -3 , which would be extremely difficult to achieve by conventional doping approaches without altering other material properties. Therefore, this method for creating stable and reproducible strongly charged ferroelectric junctions enables more systematic studies of their physical properties, such as the possibility of structural and electronic phase transitions, and it can lead to new ferroelectric devices for advanced information functions.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Understanding middle-point inductance's effect on switching transients for multi-chip SiC package design with P-cell/N-cell concept

Middle-point inductance L_middle can be introduced in power module designs with P-cell/N-cell concept. In this paper, the effect of middle-point inductance on switching transients is analyzed first using frequency domain analysis. Then a dedicated multiple-chips power module is fabricated with the capability of varying L_middle, and extensive switching tests are conducted to evaluate the device’s switching performance at different L_middle. Experiment results show that as L_middle changes, different voltage stresses are imposed on the active switch and anti-parallel diode. For lower MOSFET’s turn-off, as L_middle goes up, the maximum voltage of lower MOSFET increases; however, the maximum voltage of anti-parallel diode decreases significantly. In addition to voltage spikes, it is observed that the active MOSFET’s turn-on loss will decrease at higher values of L_middle while its turn-off loss will increase. Detailed analysis of this loss variation is presented. The analysis and experiment results will provide design guidelines for multiple-chips power module package design with P-cell/N-cell concept.

Yang, Fei↗
DOE OSTI2021

Switching Characteristics of a 1.2 kV, 50 mΩ SiC Monolithic Bidirectional Field Effect Transistor (BiDFET) with Integrated JBS Diodes

—The switching performance of large area (1cm x 1cm) monolithic 1.2 kV 50 mΩ 4H-SiC bidirectional field effect transistor (BiDFET) with integrated JBS diodes is reported for the first time. The devices were fabricated in a 6-inch commercial foundry and then packaged in a custom-designed four-terminal module. The switching performance of the BiDFET has been observed to be 1.4x better than that of its internal JBSFETs. Dynamic characterization was performed at 800 V with different gate resistances, current levels and case temperatures. An increase in switching losses was observed for the BiDFET with increasing gate resistance and current level as observed for SiC power MOSFETs. The BiDFET showed a 9% reduction in total switching loss from 25 °C to 150 °C with a current of 10 A.

Silicon Carbide, Monolithic, Bidirectional, FourQu↗
DOE OSTI2021

A Load Switching Group based Feeder-level Microgrid Energy Management Algorithm for Service Restoration in Power Distribution System

This paper presents a load switching group based energy management system (LSG-EMS) for operating microgrids on a distribution feeder powered by one or multiple grid-forming distributed energy resources. Loads on a distribution feeder are divided into load switching groups that can be remotely switched on and off. The LSG-EMS algorithm, formulated as a mixed-integer linear programming (MILP) problem, has an objective function of maximizing the served loads while minimizing the total number of switching actions. A new set of topology constraints are developed for allowing multiple microgrids to be formed on the feeder and selecting the optimal supply path. Customer comfort is accounted for by maximizing the supply duration in the customer preferred service period and enforcing a minimum service duration. The proposed method is demonstrated on a modified IEEE 33-bus system using actual customer data. Simulation results show that the LSG-EMS successfully coordinates multiple grid-forming sources by selecting an optimal supply topology that maximizes the supply period of both the critical and noncritical loads while minimizing customer service interruptions in the service restoration process.

Hu, Rongxing↗
DOE OSTI2018

Parasitic Capacitors' Impact on Switching Performance in a 10 kV SiC MOSFET Based Converter

In a converter based on 10 kV SiC MOSFETs, major sources of parasitic capacitance are the anti-parallel junction barrier schottky (JBS) diode, heat sink, and load inductor. A half bridge phase leg test setup is built to investigate these parasitic capacitors’ impact on the switching performance at 6.25 kV. Generally these parasitic capacitors slows down both turn-on and turn-off transient and can cause significant increase in switching energy loss. The impact of the parasitic capacitor in the load inductor is analyzed, which has either very short wire or long wire in series. Switching performance of the phase leg with two different thermal designs are compared to investigate the impact of the parasitic capacitor due to the heat sink. The large parasitic capacitor due to the large drain plate of discrete 10 kV SiC MOSFET for heat dissipation can result in 44.5% increase in switching energy loss at low load current.

Huang, Xingxuan↗
DOE OSTI2023

Picosecond spin-orbit torque–induced coherent magnetization switching in a ferromagnet

Electrically controllable nonvolatile magnetic memories show great potential for the replacement of conventional semiconductor-based memory technologies. Here, we experimentally demonstrate ultrafast spin-orbit torque (SOT)-induced coherent magnetization switching dynamics in a ferromagnet. We use an ultrafast photoconducting switch and a coplanar strip line to generate and guide a ~9-picosecond electrical pulse into a heavy metal/ferromagnet multilayer to induce ultrafast SOT. We then use magneto-optical probing to investigate the magnetization dynamics with sub-picosecond resolution. Ultrafast heating by the approximately 9 picosecond current pulse induces a thermal anisotropy torque which, in combination with the damping-like torque, coherently rotates the magnetization to obtain zero-crossing of magnetization in ~70 picoseconds. A macro-magnetic simulation coupled with an ultrafast heating model agrees well with the experiment and suggests coherent magnetization switching without any incubation delay on an unprecedented time scale. Our work proposes a unique magnetization switching mechanism toward markedly increasing the writing speed of SOT magnetic random-access memory devices.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2024

Maximum Switching Throughput Density Estimator

SAND2024-11125O The Maximum Switching Throughput Density Estimator software performs a simple analysis that estimates the maximum logic switching throughput density that’s achieved in various CMOS technology nodes on the International Roadmap for Devices and Systems. This software utilizes simple device models and optimization techniques, performing a simple sweep over a range of possible logic supply voltages, and analytically calculating the maximum switching frequency for the given logic voltage that meets the power density constraint. It does this by using simple models of power dissipation in conventional and fully adiabatic switching. Sandia National Laboratories is a multimission laboratory managed and operated by National Technology & Engineering Solutions of Sandia, LLC, a wholly owned subsidiary of Honeywell International Inc., for the U.S. Department of Energy’s National Nuclear Security Administration under contract DE-NA0003525.

Frank, Michael↗
DOE OSTI2023

Investigation of SF6 Alternatives in Spark Gap Switches for GWP Reduction

This primary purpose of this project was to evaluate alternative gas mixtures to sulfur hexafluoride (SF6) developed for high voltage power delivery applications for use in high voltage spark gap switches. These SF6 alternatives lower global warming potential emissions and enable improvements to the pressure-voltage design space. A combined experimental, computational, and theoretical study was used to quantify the impact of persistent breakdown products on the breakdown distribution of SF6-replacement gas mixtures. Viable SF6 replacements suitable for use in spark gap switches were studied to enable performance and agility improvements for next-generation pulsed power research relevant to national security missions. Experimental campaign included establishing parameters of switch gases as function of concentration. Various concentrations and pressures were tested for trends in breakdown voltage, repeatability, and durability, and breakdown constituents. A zero-dimensional plasma global model was used to simulate the plasma arc decay and recombination process in spark-gap switches relevant to the Z machine. Finally, a complete and consistent set of electron-neutral collision cross-sections for the novel insulating gas C4F7N is reported.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2024

Four Channel Time Multiplexed Photonic Doppler Velocimetry using an Optical Switch

Photonic Doppler Velocimetry (PDV) is a diagnostic commonly used in shock physics and dynamic compression experiments to reliably get velocity information from experiments. In PDV systems, a common method of reducing experimental cost is to use time and frequency multiplexing to increase the number of PDV probes. With time multiplexing, interference between probes is a frequent problem. In this report, we look at using a high-speed optical switch to reduce this interference, including measuring the amount of interference generated to determine if it has the potential to affect experiments and integrating a time multiplexing system into an experiment. We find that, when applied to PDV systems, there is approximately (-23.4 ± 0.9) dB of interference measured in the short time Fourier transform between switch inputs. When an optical switch based time multiplexing system was integrated into a dynamic compression experiment, the system was able to successfully combine the signals from four different PDV probes onto a single optical cable without unacceptable levels of interference in the spectrogram. An optical switch based time multiplexing system appears to be a promising method for reducing the cost of fielding larger numbers of PDV probes in an experiment.

47 OTHER INSTRUMENTATION↗
DOE OSTI2024

Quantum Random Walk Simulator Using Ultrafast Optical Switches

Quantum random walk processes have many intriguing applications in high energy physics including the simulation of parton shower evolution. We will present the design and initial results of a fiber loop time-bin quantum walk architecture using the hardware platform already in operation at the Fermilab Quantum Network in which the state of the photon is defined by its time-of-arrival. The fiber loop consists of an unbalanced Mach-Zehnder interferometer implemented using an ultrafast electro-optical switch. The input switch controls the photon path within the interferometer, while the output switch will direct the photon back into the interferometer or to single photon detectors to measure the probability distribution of arrival times. Depending on which path the photon takes each pass through the loop, its wave function will interfere on these optical switches similar to quantum interference on a beam splitter. This work is an important step towards utilizing real-world advantages of quantum information protocols to solve problems in high energy physics.

Cameron, Andrew [Fermilab]↗
DOE OSTI2026

Gallium Arsenide Semiconductor Opening Switches: Enabling Nanosecond High Powering Pulsed Systems

The goal of this work awas to investigate design manufacturing semiconductor opening switches (SOS) in both silicon and gallium arsenide (GaAs). Solid-state opening switches are critical components for pulsed power systems and applications in directed energy, dielectric wall accelerators, and novel semiconductor manufacturing techniques. Under this funding, we have developed silicon SOS designs that suppresses an unwanted prepulse, increases the peak output voltage by about 10 percent, and reduces the pulse rise time by ~ 4x compared with more conventional profiles. Through this effort we have improved device fabrication and bonding techniques. Additionally, work on this the GaAs opening switch has defined a unique application space that these devices are suited for. GaAs opening switches have short risetimes and pulse widths compared to silicon devices, however the short carrier lifetime of GaAs makes the circuit design more challenging than in silicon. For high PRF operation, the lifetime of the GaAs is an advantage compared to silicon. TCAD simulations of GaAs devices have been used to optimize a GaAs profile. Additionally, we have designed pulsers with sub 50ns reserve pump times and tested GaAs COTs PIN diodes in them.

42 ENGINEERING↗
DOE OSTI2022

Benchmarking Real-Time Control Platforms Using a Matlab/Simulink Coder with Applications in the Control of DC/AC Switched Power Converters

In the control of DC/AC switched power converters (SPC), one of the most important aspects to be considered is the selection of the real-time control platform. The real-time control platform must be able to meet the high performance efficiency and regulation requirements of the DC/AC SPC, as these typically operate at switching frequencies in the order of kHz to MHz. For this reason, the hardware characteristics of the ADC and PWM, and the processing capacity of the real-time control platform are of vital importance when implementing advanced digital controllers that maintain voltage and current levels within regulatory standards. In this context, we aimed to perform a comparative study of the computation times of different real-time control platforms when implementing different control strategies for DC/AC switched power converters. We also analyzed the impact of the real-time control platforms on the THD of the voltages generated by the DC/AC switched power converters. With the help of this paper, researchers and developers will have criteria to select which real-time control platform to use in real-time control for DC/AC SPC applications.

42 ENGINEERING↗
NASA NTRS1965

Inflatable bladder provides accurate calibration of pressure switch

Calibration of a pressure switch is accurately checked by a thin-walled circular bladder. It is placed in the pressure switch and applies force to the switch diaphragm when expanded by an external pressure source. The disturbance to the normal operation of the switch is minimal.

Smith, N. J.↗
NASA NTRS1972

Miniature intermittent contact switch

Design of electric switch for providing intermittent contact is presented. Switch consists of flexible conductor surrounding, but separated from, fixed conductor. Flexing of outside conductor to contact fixed conductor completes circuit. Advantage is small size of switch compared to standard switches.

Sword, A.↗
NASA NTRS1973

Radiation sensitive solid state switch

A mechanically operable solid state switch suited for use in achieving a variable circuit-switching function is described. This switch is characterized by an annular array of photoresponsive switching devices, disposed in communication with an included source of radiation, and a plurality of interchangeable, mechanically operable interrupter disks. Each disk has a predetermined pattern of transparent and opaque portions. Operative displacement of each disk serves to make and break selected electrical circuits through the photo responsive devices of said array.

Hutto, R. J.↗