Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “SILICONES”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 505 records · Page 28
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

The Pixel Luminosity Telescope: a detector for luminosity measurement at CMS using silicon pixel sensors

The Pixel Luminosity Telescope is a silicon pixel detector dedicated to luminosity measurement at the CMS experiment at the LHC. It is located approximately 1.75 m from the interaction point and arranged into 16 “telescopes”, with eight telescopes installed around the beam pipe at either end of the detector and each telescope composed of three individual silicon sensor planes. The per-bunch instantaneous luminosity is measured by counting events where all three planes in the telescope register a hit, using a special readout at the full LHC bunch-crossing rate of 40 MHz. The full pixel information is read out at a lower rate and can be used to determine calibrations, corrections, and systematic uncertainties for the online and offline measurements. This paper details the commissioning, operational history, and performance of the detector during Run 2 (2015–18) of the LHC, as well as preparations for Run 3, which will begin in 2022.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2021

Void-free Copper Electrodeposition in High Aspect Ratio, Full Wafer Thickness Through-Silicon Vias with Endpoint Detection

High density interconnects are required for increased input/output for microelectronics applications, incentivizing the development of Cu electrochemical deposition (ECD) processes for high aspect ratio through-silicon vias (TSVs). This work outlines Cu ECD processes for 62.5 μ m diameter TSVs, etched into a 625 μ m thick silicon substrate, a 10:1 aspect ratio. Cu ECD in high aspect ratio features relies on a delicate balance of electrolyte composition, solution replenishment, and applied voltage. Implementing a CuSO 4 -H 2 SO 4 electrolyte, which contains suppressor and a low chloride concentration, allows for a tunable relationship between applied voltage and localized deposition in the vias. A stepped potential waveform was applied to move the Cu growth front from the bottom of the via to the top. Sample characterization was performed through mechanical cross-sections and X-ray computed tomography (CT) scans. The CT scans revealed small seam voids in the Cu electrodeposit, and process parameters were tuned accordingly to produce void-free Cu features. During the voltage-controlled experiments, measured current data showed a characteristic current minimum, which was identified as an endpoint detection method for Cu deposition in these vias. We believe this is the first report of this novel endpoint detection method for TSV filling.

42 ENGINEERING↗
DOE OSTI2022

Electrolytes Containing Triethyl Phosphate Solubilized Lithium Nitrate for Improved Silicon Anode Performance

An electrolyte consisting of lithium nitrate (LiNO3) and lithium difluoro(oxalato)borate (LiDFOB) in ethylene carbonate (EC), ethylmethyl carbonate (EMC), and triethyl phosphate (TEP) is used to improve the long-term cycling stability of silicon anodes. TEP was selected for its ability to dissolve LiNO 3 in carbonates to a concentration of ~0.2 M. The large amount of LiNO 3 combined with the LiDFOB salt leads to a capacity retention of 87.1% after one hundred cycles due to the formation of a relatively stable solid electrolyte interphase (SEI). Ex-situ surface analysis reveals that the SEI consists of oxalates, lithium alkyl carbonates, borates, and nitrate reduction products. By selecting two components which are preferentially reduced (LiNO 3 and LiDFOB), the SEI is able to inhibit continuous solvent decomposition and allows for improved electrochemical cycling for pure silicon anodes.

25 ENERGY STORAGE↗
DOE OSTI2023

Improved Performance of Silicon-Containing Anodes with Organic Solvent-Solubilized Lithium Nitrate

Three different organic solvents (dimethylacetamide (DMAc), dimethylformamide (DMF), and dimethyl sulfoxide (DMSO)) were used to improve the solubility of LiNO 3 in a standard carbonate-based electrolyte with lithium difluoro(oxalato)borate (LiDFOB) as the salt. Together, the LiDFOB and organic-solvent solubilized LiNO 3 preferentially reduce on the surface of silicon-containing anodes to create an SEI rich in oxalates, nitrate decomposition species, and B-F species. The improved stability of the SEI throughout the first 100 cycles results in silicon and silicon/graphite composite anodes with better capacity retention than observed with standard electrolytes or fluoroethylene carbonate (FEC) containing electrolytes. This study demonstrates the feasibility of the use of non-traditional electrolyte solvents in the improvement and optimization of lithium ion-battery electrolytes.

25 ENERGY STORAGE↗
DOE OSTI2024

Zero-crosstalk silicon photonic refractive index sensor with subwavelength gratings

Abstract Silicon photonic index sensors have received significant attention for label-free bio and gas-sensing applications, offering cost-effective and scalable solutions. Here, we introduce an ultra-compact silicon photonic refractive index sensor that leverages zero-crosstalk singularity responses enabled by subwavelength gratings. The subwavelength gratings are precisely engineered to achieve an anisotropic perturbation-led zero-crosstalk, resulting in a single transmission dip singularity in the spectrum that is independent of device length. The sensor is optimized for the transverse magnetic mode operation, where the subwavelength gratings are arranged perpendicular to the propagation direction to support a leaky-like mode and maximize the evanescent field interaction with the analyte space. Experimental results demonstrate a high wavelength sensitivity of − 410 nm/RIU and an intensity sensitivity of 395 dB/RIU, with a compact device footprint of approximately 82.8 μm 2 . Distinct from other resonant and interferometric sensors, our approach provides an FSR-free single-dip spectral response on a small device footprint, overcoming common challenges faced by traditional sensors, such as signal/phase ambiguity, sensitivity fading, limited detection range, and the necessity for large device footprints. This makes our sensor ideal for simplified intensity interrogation. The proposed sensor holds promise for a range of on-chip refractive index sensing applications, from gas to biochemical detection, representing a significant step towards efficient and miniaturized photonic sensing solutions. Graphical Abstract

Materials Science↗
DOE OSTI2024

Flexible silicon photonic architecture for accelerating distributed deep learning

The increasing size and complexity of deep learning (DL) models have led to the wide adoption of distributed training methods in datacenters (DCs) and high-performance computing (HPC) systems. However, communication among distributed computing units (CUs) has emerged as a major bottleneck in the training process. In this study, we propose Flex-SiPAC, a flexible silicon photonic accelerated compute cluster designed to accelerate multi-tenant distributed DL training workloads. Flex-SiPAC takes a co-design approach that combines a silicon photonic hardware platform with a tailored collective algorithm, optimized to leverage the unique physical properties of the architecture. The hardware platform integrates a novel wavelength-reconfigurable transceiver design and a micro-resonator-based wavelength-reconfigurable switch, enabling the system to achieve flexible bandwidth steering in the wavelength domain. The collective algorithm is designed to support reconfigurable topologies, enabling efficient all-reduce communications that are commonly used in DL training. The feasibility of the Flex-SiPAC architecture is demonstrated through two testbed experiments. First, an optical testbed experiment demonstrates the flexible routing of wavelengths by shuffling an array of input wavelengths using a custom-designed spatial-wavelength selective switch. Second, a four-GPU testbed running two DL workloads shows a 23% improvement in job completion time compared to a similarly sized leaf-spine topology. We further evaluate Flex-SiPAC using large-scale simulations, which show that Flex-SiPAC is able to reduce the communication time by 26% to 29% compared to state-of-the-art compute clusters under representative collective operations.

Wu, Zhenguo (ORCID:0000000322847985)↗
DOE OSTI2023

Improved fabrication of scalable hybrid silicon nitride–thin-film lithium niobate electro-optic modulators

Strategies for improved fabrication of integrated thin-film lithium niobate electro-optic (EO) Mach–Zehnder modulators (MZMs) are reported using scalable processes and designs. The MZM devices utilize direct bonding of unetched and unpatterned thin-film lithium niobate to patterned and planarized silicon photonic microchips. The latter contains silicon nitride waveguide structures of various widths that are used to form hybrid modes that are suitable for high-bandwidth low-voltage EO modulators based on Pockels effect. We report that the incorporation of appropriately designed outgassing channels and certain modifications to key processing steps helped achieve a greater than 99% reduction in void density during bonding. Void reduction is critically important for these traveling-wave hybrid MZM devices in which the optical mode is controllably distributed between multiple thin layers and propagates over millimeter-scale lengths.

Mere, Viphretuo↗
DOE OSTI2020

Silicon photonic chip for 16-channel wavelength division (de-)multiplexing in the O-band

We experimentally demonstrate a silicon photonic chip-scale 16-channel wavelength division multiplexer (WDM) operating in the O-band. The silicon photonic chip consists of a common-input bus waveguide integrated with a sequence of 16 spectral add-drop filters implemented by 4-port contra-directional Bragg couplers and resonant cladding modulated perturbations. The combination of these features reduces the spectral bandwidth of the filters and improves the crosstalk. An apodization of the cladding modulated perturbations between the bus and the add/drop waveguides is used to optimize the strength of the coupling coefficient in the propagation direction to reduce the intra-channel crosstalk on adjacent channels. The fabricated chip was validated experimentally with a measured intra-channel crosstalk of ∼−18.9 dB for a channel spacing of 2.6 nm. The multiplexer/demultiplexer chip was also experimentally tested with a 10 Gbps data waveform. The resulting eye-pattern indicates that this approach is suitable for datacenter WDM-based interconnects in the O-band with large aggregate bandwidths.

Davis, Jordan A. (ORCID:0000000343483295)↗
DOE OSTI2022

High-speed silicon microresonator modulators with high optical modulation amplitude (OMA) at input powers >10 mW

A high-speed silicon photonic microdisc modulator is used with more than 10 mW optical power in the bus waveguide, extending the optical power handling regime used with compact silicon resonant modulators at 1550 nm. We present an experimental study of the wavelength tuning range and biasing path required to shift the resonant frequency to the optimal point versus on chip power. We measure the optical modulation amplitude (OMA) along different biasing trajectories of the microdisc under active modulation and demonstrate an OMA of 4.1 mW with 13.5 mW optical power in the bus waveguide at 20 Gbit/s non-return to zero (NRZ) data modulation.

Wang, Xiaoxi↗
DOE OSTI2022

Ultra-compact hybrid silicon:chalcogenide waveguide temperature sensor

We demonstrate a real-time, reusable, and reversible integrated optical sensor for temperature monitoring within harsh environments. The sensor architecture combines the phase change property of chalcogenide glasses (ChG) with the high-density integration advantages of high index silicon waveguides. To demonstrate sensor feasibility, ChG composition Ge 40 S 60 , which is characterized by a sharp phase transition from amorphous to crystalline phase around 415 °C, is deposited over a 50 µ m section of a single mode optical waveguide. The phase transition changes the behavior of Ge 40 S 60 from a low loss to high loss material, thus significantly affecting the hybrid waveguide loss around the phase transition temperature. A transmission power drop of over 40dB in the crystalline phase compared to the amorphous phase is experimentally measured. Moreover, we recover the amorphous phase through the application of an electrical pulse, thus showing the reversible nature of our compact temperature sensor. Through integrating multiple compositions of ChG with well-defined phases transition temperatures over a silicon waveguide array, it is possible to determine, in real-time, the temperature evolution within a harsh environment, such as within a nuclear reactor cladding.

Badamchi, Bahareh (ORCID:0000000193105300)↗
DOE OSTI2024

Absorption and scattering limits of silicon nitride integrated photonics in the visible spectrum

Visible-light photonic integrated circuits (PICs) promise scalability for technologies such as quantum information, biosensing, and scanning displays, yet extending large-scale silicon photonics to shorter wavelengths has been challenging due to the higher losses. Silicon nitride (SiN) has stood out as the leading platform for visible photonics, but the propagation losses strongly depend on the film’s deposition and fabrication processes. Current loss measurement techniques cannot accurately distinguish between absorption and surface scattering, making it difficult to identify the dominant loss source and reach the platform’s fundamental limit. Here we demonstrate an ultra-low loss, high-confinement SiN platform that approaches the limits of absorption and scattering across the visible spectrum. Leveraging the sensitivity of microresonators to loss, we probe and discriminate each loss contribution with unparalleled sensitivity, and derive their fundamental limits and scaling laws as a function of wavelength, film properties and waveguide parameters. Through the design of the waveguide cross-section, we show how to approach the absorption limit of the platform, and demonstrate the lowest propagation losses in high-confinement SiN to date across the visible spectrum. We envision that our techniques for loss characterization and minimization will contribute to the development of large-scale, dense PICs that redefine the loss limits of integrated platforms across the electromagnetic spectrum.

Corato-Zanarella, Mateus (ORCID:0000000327318046)↗
DOE OSTI2021

Demonstration of the DC-Kerr effect in silicon-rich nitride

We demonstrate the DC-Kerr effect in plasma enhanced chemical vapor deposition (PECVD) silicon-rich nitride (SRN) and use it to demonstrate a third order nonlinear susceptibility, χ (3) , as high as (6 ± 0.58) × 10 -19 m 2 /V 2 . We employ spectral shift versus applied voltage measurements in a racetrack resonator as a tool to characterize the nonlinear susceptibilities of these films. In doing so, we demonstrate a χ (3) larger than that of silicon and argue that PECVD SRN can provide a versatile platform for employing optical phase shifters while maintaining a low thermal budget using a deposition technique readily available in CMOS process flows.

42 ENGINEERING↗
DOE OSTI2021

32 Gbps heterogeneously integrated quantum dot waveguide avalanche photodiodes on silicon

We report a heterogeneous GaAs-based quantum dot (QD) avalanche photodiode (APD) on silicon with an ultralow dark current of 10 pA at − <#comment/> 1 V , 3 dB bandwidth of 20 GHz and record gain-bandwidth product (GBP) of 585 GHz. Furthermore, open eye diagrams up to 32 Gb/s are demonstrated at 1310 nm. The k-factor has been measured for these devices to be as low as 0.14. A polarization dependence on gain and bandwidth has been observed and investigated. This shows the potential to integrate a high-speed receiver in a wavelength division multiplexing (WDM) system on a QD-based silicon photonics platform.

Tossoun, Bassem↗
DOE OSTI2024

Non-resonant Bragg scattering four-wave mixing at near-visible wavelengths in low-confinement silicon nitride waveguides

Quantum state coherent frequency conversion processes—such as Bragg-scattering four-wave mixing (BSFWM)—hold promise as a flexible technique for networking heterogeneous and distant quantum systems. In this Letter, we demonstrate BSFWM within an extended (1.2-m) low-confinement silicon nitride waveguide and show that this system has the potential for near-unity frequency conversion in visible and near-visible wavelength ranges. Using sensitive classical heterodyne laser spectroscopy at low optical powers, we characterize the Kerr coefficient (∼1.55 W −1 m −1 ) and linear propagation loss (∼0.0175 dB/cm) of this non-resonant waveguide system, revealing a record-high nonlinear figure of merit (NFM = γ / α ≈ 3.85 W −1 ) for BSFWM of near-visible light in non-resonant silicon nitride waveguides. We predict how, at high yet achievable on-chip optical powers, this NFM would yield a comparatively large frequency conversion efficiency, opening the door to near-unity flexible frequency conversion without cavity enhancement and resulting bandwidth constraints.

Jaber, Nicholas (ORCID:000900070106809X)↗
DOE OSTI2020

Optically anisotropic porous silicon microlenses with tunable refractive indexes and birefringence profiles

The effect of spatially varying birefringence on the focusing behavior of porous silicon (PSi) and porous silicon dioxide (PSiO 2 ) gradient refractive index (GRIN) lenses is investigated. Both materials attain broad, tunable refractive indexes and birefringence profiles, with PSi having a maximum birefringence of ~0.26 and PSiO 2 a reduced maximum birefringence of ~0.03 at 633 nm. These GRIN lenses exhibit polarization-dependent split focusing behavior, wherein the divergence angle between the twin foci increases with the birefringence gradient. PSi’s large birefringence allows the divergence angle to be tuned such that light focuses away from the center of the lens. These GRIN elements demonstrate how tunable birefringent materials can be used to engineer polarization-selective optical responses.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Electro-optic transduction in silicon via gigahertz-frequency nanomechanics

Interfacing electronics with optical fiber networks is key to the long-distance transfer of classical and quantum information. Piezo-optomechanical transducers enable such interfaces by using gigahertz-frequency acoustic vibrations as mediators for converting microwave photons to optical photons via the combination of optomechanical and piezoelectric interactions. However, despite successful demonstrations, efficient quantum transduction remains out of reach due to the challenges associated with hybrid material integration and increased loss from piezoelectric materials when operating in the quantum regime. Here, we demonstrate an alternative approach in which we actuate 5-GHz phonons in a conventional silicon-on-insulator platform. In our experiment, microwave photons resonantly drive a phononic crystal oscillator via the electrostatic force realized in a charge-biased narrow-gap capacitor. The mechanical vibrations are subsequently transferred via a phonon waveguide to an optomechanical cavity, where they transform into optical photons in the sideband of a pump laser field. Operating at room temperature and atmospheric pressure, we measure a microwave-to-optical photon conversion efficiency of 1.72±0.14×10 −7 in a 3.3 MHz bandwidth. Our results mark a stepping stone towards quantum transduction with integrated devices made from crystalline silicon, which promise efficient high-bandwidth operation and integration with superconducting qubits. Additionally, the lack of need for piezoelectricity or other intrinsic nonlinearities makes our approach applicable to a wide range of materials for potential applications beyond quantum technologies.

42 ENGINEERING↗
DOE OSTI2023

Scaling comb-driven resonator-based DWDM silicon photonic links to multi-Tb/s in the multi-FSR regime

The use of chip-based micro-resonator Kerr frequency combs in conjunction with dense wavelength-division multiplexing (DWDM) enables massively parallel intensity-modulated direct-detection data transmission with low energy consumption. Resonator-based modulators and filters used in such systems can limit the number of usable wavelength channels due to practical constraints on the maximum achievable free spectral range (FSR). In this work, we introduce the design of multi-Tb/s comb-driven resonator-based silicon photonic links by leveraging the multi-FSR regime. We demonstrate the viability of the link architecture with yield estimates that are supported by extensive wafer-scale measurements of 704 micro-resonators fabricated in a commercial complementary metal–oxide–semiconductor foundry. We show that a 2.80 Tb/s link is realizable with a ≥6 σ yield (∼99.999%), and that aggregate bandwidths of 3.76 Tb/s and 4.72 Tb/s are possible if yield targets are relaxed (3 σ and 1 σ , respectively). All designs represent a 1.94−3.28× boost to aggregate link bandwidth while maintaining BER≤10 −10 performance, with a theoretical bandwidth of 10.51 Tb/s being possible for sufficiently robust resonators. We use high-speed BER measurements to inform co-optimization of data rate and aggressor spacing ( λ ag ), limiting any additional loss-based power penalties to off-resonance insertion loss (IL) and routing loss. This work demonstrates that, through the multi-FSR regime, there is a clear path toward Kerr comb-driven ultra-broadband, high bandwidth silicon photonic links that can support next-generation data centers and high-performance computers.

James, Aneek (ORCID:0000000262527807)↗
DOE OSTI2021

Phase-shifted Bragg gratings in a foundry silicon nitride platform

Bragg gratings are key optical elements for applications in communications, sensing, and lasers. Phase-shifted Bragg gratings are a special case where the simple periodic structure is altered to allow a narrow spectral passband within the optical bandgap. Here, we demonstrate phase-shifted silicon nitride gratings fabricated using 193 nm deep ultraviolet lithography (DUV) on the AIM Photonics 300 mm silicon photonics foundry line. We measure the grating properties and verify the results with a transfer-matrix method (TMM) model. The standard grating expressions for extracting the coupling coefficient κ and bandwidth do not apply and are updated to account for the phase shift. These results inform future designs for on-chip grating filters and distributed feedback (DFB) lasers.

Husko, Chad (ORCID:0000000271252518)↗