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Different site occupancies in substitution variants of Mo{sub 3}Sb{sub 7}

A series of samples with the initial formula Mo{sub 3–x}Fe{sub x}Sb{sub 7} and Mo{sub 3–x}Ni{sub x}Sb{sub 7} have been prepared by solid state reaction at 873 K, starting from the elements in the stoichiometric ratios. The materials were compressed via hot-pressing, and their thermoelectric properties determined. Single crystal data show that Ni atoms in part occupy the cubic voids of the Mo{sub 3}Sb{sub 7} structure, as well as replace some Mo atoms, in contrast to the Fe analogues, where we found no evidence for Fe in the cubic voids. Supported by electronic structure calculations, replacing Mo with Fe or Ni increases the valence-electron count, thus decreases the numbers of p-type carriers of Mo{sub 3}Sb{sub 7}. On the other hand, filling the holes with Ni atoms appears to have no such effect. As a consequence, the Ni containing samples exhibit higher electrical conductivity than the Fe analogues, and ultimately lower thermoelectric figure-of-merit, as the p-type carrier concentration remains too high. - Graphical abstract: Trying to substitute Ni atoms for Mo in Mo{sub 3}Sb{sub 7} resulted in partial filling of the cubic voids, in contrast to Mo{sub 3–x}Fe{sub x}Sb{sub 7}. Since the Ni atoms in the Sb{sub 8} cubes do not act as electron donors, the Ni-containing materials exhibit very high carrier concentration, and thus high electric conductivity and low Seebeck coefficient. - Highlights: • Various substitution variants of Mo{sub 3}Sb{sub 7} with Fe and Ni were characterized. • While the Fe atoms replace the Mo atoms, the Ni atoms also fill the cubic voids. • Higher Fe/Ni amount on the Mo sites causes a decrease of the charge carriers. • The Ni atoms on the cubic sites do not decrease the charge carriers. • The lower the carrier concentration, the better the thermoelectric properties.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Structural, electrical, and thermoelectric properties of bismuth telluride: Silicon/carbon nanocomposites thin films

In this study, the effect of the presence of secondary phases on the structural, electrical, and thermoelectric properties of nanocomposite Bi{sub 2}Te{sub 3} films prepared by co-sputtering of silicon and carbon with Bi{sub 2}Te{sub 3} has been investigated. Growth temperature and the presence of Si and C phase are observed to have a strong effect on the topography and orientation of crystallites. X-ray diffraction study demonstrates that Bi{sub 2}Te{sub 3} and Bi{sub 2}Te{sub 3}:C samples have preferred (0 0 15) orientation in comparison to Bi{sub 2}Te{sub 3}:Si sample, which have randomly oriented crystallites. Atomic force, conducting atomic force, and scanning thermal microscopy analysis show significant differences in topographical, electrical, and thermal conductivity contrasts in Bi{sub 2}Te{sub 3}:Si and Bi{sub 2}Te{sub 3}:C samples. Due to the randomly oriented crystallites and the presence of Si along the crystallite boundaries, appreciable Seebeck coefficient, higher electrical conductivity, and lower thermal conductivity is achieved resulting in relatively higher value of power factor (3.71 mW K{sup −2} m{sup −1}) for Bi{sub 2}Te{sub 3}:Si sample. This study shows that by incorporating a secondary phase along crystallite boundaries, microstructural, electrical, and thermoelectric properties of the composite samples can be modified.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

The Role of Ordering on the Thermoelectric Properties of Blends of Regioregular and Regiorandom Poly(3‐hexylthiophene)

Abstract The thermoelectric properties of semiconducting polymers are influenced by both the carrier concentration and the morphology that sets the pathways for charge transport. A combination of optical, morphological, and electrical characterization is used to assess the effect of the role of disorder on the thermoelectric properties of thin films of poly(3‐hexylthiophene) (P3HT) doped with 2,3,5,6‐tetrafluoro‐7,7,8,8‐tetracyanoquinodimethane (F 4 TCNQ). Controlled morphologies are formed by casting blends of regioregular (RR‐P3HT) and regiorandom (RRa‐P3HT) and then subsequently doped with F 4 TCNQ from the vapor phase. Optical spectroscopy and X‐ray scattering show that vapor phase doping induces order in the disordered regions of thin films and increases the long‐range connectivity of the film. The thermoelectric properties are assessed as a function of composition and it is shown that while the Seebeck coefficient is affected by structural ordering, the electrical conductivity and power factor are more strongly correlated with the long‐range connectivity of ordered domains.

Lim, Eunhee↗

Thermoelectric properties optimization of Fe{sub 2}VGa by tuning electronic density of states via titanium doping

We report the correlation between thermoelectric properties and electronic band structure of thermoelectric Heusler alloy Fe{sub 2}V{sub 1-x}Ti{sub x}Ga by comparing experimental measurements with theoretical calculations. The electrical resistivity data show that the semiconducting-like behavior of pure Fe{sub 2}VGa is transformed to a more metallic-like behavior at x = 0.1. Meanwhile, an enhancement of the Seebeck coefficient was observed for all Ti doped specimens at elevated temperatures with a peak value of 57 μV/K for x = 0.05 at 300 K. The experimental results can be elucidated by the calculated band structure, i.e., a gradual shifting of the Fermi level from the middle of the pseudogap to the region of valence bands. With optimized doping, the thermoelectric power factor can be significantly enhanced to 3.95 mW m{sup −1} K{sup −2} at room temperature, which is comparable to the power factors of Bi{sub 2}Te{sub 3}-based compounds. The synergy of thermal conductivity reduction due to the alloying effect and the significant increase of the thermoelectric power factor leads to higher order zT values than that of prime Fe{sub 2}VGa.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Numerical simulation of heat and mass transport during space crystal growth with MEPHISTO

The MEPHISTO space experiments are collaborative United States and French investigations aimed at understanding the fundamentals of crystal growth. Microgravity experiments were conducted aboard the USMP-1 and -2 missions on STS-52 and 62 in October 1992 and March 1994 respectively. MEPHISTO is a French designed and built Bridgman type furnace which uses the Seebeck technique to monitor the solid/liquid interface temperature and Peltier pulsing to mark the location and shape of the solid/liquid interface. In this paper the Bridgman growth of Sn-Bi and Bi-Sn under terrestrial and microgravity conditions is modeled using the finite element code, FIDAP*. The numerical model considers fully coupled heat and mass transport, fluid motion and solid/liquid phase changes in the crystal growth process. The primary goals of this work are: to provide a quantitative study of the thermal buoyancy-induced convection in the melt for the two flight experiments; to compare the vertical and horizontal growth configurations and systematically evaluate the effects of various gravity levels on the solute segregation. Numerical results of the vertical and horizontal Bridgman growth configurations are presented.

Yao, Minwu↗

Longitudinal Magnetic Field Effects on Thermal Transport of Doped Bilayer Graphene

We address thermal conductivity of doped biased bilayer graphene for AA-stacking in the context of tight binding model hamiltonian. The effect of magnetic field as its direction is along perpendicular to graphene plane on thermal conductivity has been investigated. Green’s function approach has been implemented to find the behavior of thermal conductivity of bilayer graphene within linear response theory. We have found the chemical potential dependence of thermal conductivity for different values of magnetic field and bias voltage. Also a peak in the dependence of thermal conductivity on magnetic field has been observed. Moreover, in the absence of magnetic field, we find a monotonic decreasing behavior for chemical dependence of thermal conductivity. However, a peak appears in chemical potential dependence of thermal conductivity at nonzero magnetic field. Finally, the behavior of Seebeck coefficient in terms of magnetic field and chemical potential has been studied in details.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Preparation and thermoelectric properties of Ga-substituted p-type fully filled skutterudites CeFe{sub 4-x}Ga{sub x}Sb{sub 12}

We demonstrate a successful substitution of Ga at the Fe sites with a solubility limit of -0.11 in the p-type filled skutterudite compounds CeFe{sub 4-x}Ga{sub x}Sb{sub 12}. With increasing Ga content, the electrical conductivity declines while the Seebeck coefficient improves gradually, consistent with the expected decrease in hole concentration due to the extra electrons introduced by Ga. Moreover, the resemblances in electrical transport properties between Ga- and Co-substituted systems with similar composition indicate that Ga doping exerts little influence on the electronic structure near the top of the valence band. The phonon transport is scarcely affected by the introduction of Ga because of negligible differences in atomic masses and sizes of Ga and Fe. The thermoelectric performance of Ga-substituted samples is slightly improved in the temperature range of 600 K to 800 K with respect to that of Ga-free sample, revealing a favorable effect of Ga-substitution on the intermediate temperature power generation application of this promising p-type material. - Graphical abstract: (a-c) Ga successfully substitutes Fe atoms up to x=0.11 in the CeFe{sub 4-x}Ga{sub x}Sb{sub 12}. (d) The introduction of Ga barely affects the electronic structure near E{sub F}. Highlights: Black-Right-Pointing-Pointer Ga as an effective substitute for Fe in p-type skutterudites CeFe{sub 4-x}Ga{sub x}Sb{sub 12}. Black-Right-Pointing-Pointer The solubility limit of Ga at Fe sites is -0.11 in CeFe{sub 4-x}Ga{sub x}Sb{sub 12}. Black-Right-Pointing-Pointer Ga barely affects the electronic structure near the Fermi level.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Discordant nature of Cd in PbSe: off-centering and core–shell nanoscale CdSe precipitates lead to high thermoelectric performance

We report a novel hierarchical microstructure in the PbSe–CdSe system, which collectively contributes to significant enhancement in thermoelectric performance, with ZT ave ~ 0.83 across the 400–923 K temperature range, the highest reported for p-type, Te-free PbSe systems. We have investigated the local atomic structure as well as the microstructure of a series of PbSe–xCdSe materials, up to x = 10%. We find that the behavior of the Cd atoms in the octahedral rock salt sites is discordant and results in off-center displacement and distortion. Such off-centered Cd in the PbSe matrix creates (1) L–Σ electronic energy band convergence, (2) a flattened L band, both contributing to higher Seebeck coefficients, and (3) enhanced phonon scattering, which leads to lower thermal conductivity. These conclusions are supported by photoemission yield spectroscopy in air (PYSA), solid state 111 Cd, 77 Se NMR spectroscopy and DFT calculations. Above the solubility limit (>6%CdSe), we also observe endotaxial CdSe nano-precipitates with core–shell architecture formed in PbSe, whose size, distribution and structure gradually change with the Cd content. The nano-precipitates exhibit a zinc blende crystal structure and a tetrahedral shape with significant local strain, but are covered with a thin wurtzite layer along the precipitate/matrix interface, creating a core–shell structure embedded in PbSe. This newly discovered architecture causes a further reduction in lattice thermal conductivity. Furthermore, potassium is found to be an effective p-type dopant in the PbSe–CdSe system, leading to an enhanced power factor, a maximum ZT of ~1.4 at 923 K for Pb 0.98 K 0.02 Se–6%CdSe.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Thermoelectric properties of Bi{sub 2}Te{sub 3}, Sb{sub 2}Te{sub 3} and Bi{sub 2}Se{sub 3} single crystals with magnetic impurities

Temparature dependence of Seebeck coefficients S, electrical conductivity, heat conductivity k and dimensionless thermoelectric figure of merit ZT of p-Bi{sub 2}Te{sub 3}, Sb{sub 2}Te{sub 3} and n-Bi{sub 2}Se{sub 3}-doped by Fe or Cr were carried out in the temperature interval 7 150 K. - Graphical abstract: Temparature dependence of Seebeck coefficients S, electrical conductivity {sigma}, heat conductivity k and dimensionless thermoelectric figure of merit ZT of p-Bi{sub 2}Te{sub 3}, Sb{sub 2}Te{sub 3} and n-Bi{sub 2}Se{sub 3} doped by Fe or Cr were measured in the temperature interval 7 150 K up to ZT=0.4 as shown in figure. Highlights: Black-Right-Pointing-Pointer Fe and Cr act as donors in Bi{sub 2}Te{sub 3}, Sb{sub 2}Te{sub 3} and Bi{sub 2}Se{sub 3.} Black-Right-Pointing-Pointer The Seebeck coefficient increases in p-Bi{sub 2-x}Fe{sub x}Te{sub 3} and Sb{sub 2-x}Cr{sub x}Te{sub 3}. Black-Right-Pointing-Pointer Dimensionless figure of merit ZT increased up to 0.4 in Cr-doped Sb{sub 2}Te{sub 3} at T=300 K.

36 MATERIALS SCIENCE↗

First principle study of structural, electronic, optical, and transport properties of ternary compounds NaGaX{sub 2} (X = S, Se, and Te) in tetragonal chalcopyrite phase

Eemploying the all electron full potential linearized augmented plane wave plus local orbital (FP-LAPW + lo) method based on density functional theory (DFT) structural, electronic, optical, and transport properties of compounds NaGaX{sub 2} (X = S, Se, and Te) in tetragonal phase have been investigated at ground state. The exchange-correlation effects have been included using the Wu Cohen (WC) generalized gradient approximation (GGA) and modified Becke–Johnson (mBJ) exchange potentials. Enthalpy of formation values ensure that crystal structures are stable in tetragonal chalcopyrite phase. Total and partial density of states, and band structures have been plotted to calculate electronic properties which exhibits direct band gap for all compounds. The electronic band gap of NaGaS{sub 2} (2.1 eV) is found to be higher than the electronic band gaps of NaGaSe{sub 2} (1.7 eV) and NaGaTe{sub 2} (1.2 eV) compounds. Using real and imaginary parts of the dielectric function, optical properties such as refractive index (n), extinction coefficient (k), reflectivity (R), absorption coefficient (α), and energy loss spectrum (L) were determined. Transport properties like Seebeck coefficient, thermal and electrical conductivities, figure of merit, and power factors have also been reported by combining the results from DFT and Boltzmann transport theory. The high absorption peaks in visible and ultraviolet regions of the energy spectrum and direct band gaps of these compounds ensure that three compounds are promising materials for photovoltaic applications.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Enhanced thermoelectric efficiency in topological insulator Bi 2 Te 3 nanoplates via atomic layer deposition-based surface passivation

We report in-plane thermoelectric measurements of Bi 2 Te 3 nanoplates, a typical topological insulator with Dirac-like metallic surface states, grown by chemical vapor deposition. The as-grown flakes exposed to ambient conditions exhibit relatively small thermopowers around -34 μV/K due to unintentional surface doping (e.g., gas adsorption and surface oxidation). After removal of the unintentional surface doping and surface passivation by deposition of 30 nm of Al 2 O 3 using atomic layer deposition (ALD), the Seebeck coefficient of these flakes increases by a factor of 5× to -169 μV/K. We believe that the ALD-based surface passivation can prevent the degradation of the thermoelectric properties caused by gas adsorption and surface oxidation processes, thus, reducing the unintentional doping in the Bi 2 Te 3 and increasing the Seebeck coefficient. The high surface-to-volume ratio of these thin (~10 nm thick) nanoplates make them especially sensitive to surface doping, which is a common problem among nanomaterials in general. An increase in the sample resistance is also observed after the ALD process, which is consistent with the decrease in doping.

36 MATERIALS SCIENCE↗

Effect of Nickel Substitution on Defect Chemistry, Electrical Properties, and Dimensional Stability of Calcium-Doped Yttrium Chromite

The effect of nickel substitution on defect chemistry, electrical properties, and dimensional stability of calcium-doped yttrium chromite was studied for use as an interconnect material in high temperature solid oxide fuel cells (SOFCs). The compositions of Y0.8Ca0.2Cr1-xNixO3±δ (x=0-0.15), prepared using the glycine nitrate process, showed single phase orthorhombic perovskite structures over a wide range of oxygen partial pressures (10^-17 atm ≤ pO2 ≤ 0.21 atm). X-ray diffraction (XRD) analysis indicated that most of the nickel ions replacing chromium ions are divalent and act as acceptor dopants, leading to a substantial increase in conductivity. In particular, the conductivity at 900 degree C in air increased from 10 S/cm to 34 S/cm with 15% nickel substitution, and an increase in charge carrier density was confirmed by Seebeck measurements. A point defect model was derived, and the relationship between electrical conductivity and oxygen partial pressure was successfully fitted into the proposed model. The defect modeling results indicated that nickel substitution improves the stability of calcium-doped yttrium chromite toward reduction and suppresses the oxygen vacancy formation, which results in significantly increased electrical conductivity in reducing environment. The electrical conductivity of Y0.8Ca0.2Cr0.85Ni0.15O3±δ at 900 degree C in reducing atmosphere (pO2=10^-17 atm) was 5.8 S/cm, which was more than an order of magnitude higher than that of Y0.8Ca0.2CrO3±δ (0.2 S/cm). Improved stability in reducing atmosphere was further confirmed by dilatometry measurements showing reduced isothermal "chemical" expansion, and the isothermal expansion in reducing atmosphere (pO2=10^-17 atm) at 900 degree C decreased from 0.07% for Y0.8Ca0.2CrO3±δ to 0.03% for Y0.8Ca0.2Cr0.85Ni0.15O3±δ. Based on these results, enhanced electrical performance and mechanical integrity is expected with nickel substitution on calcium-doped yttrium chromite in SOFC operating conditions.

30 DIRECT ENERGY CONVERSION↗

Simultaneous Thermoelectric Property Measurement and Incoherent Phonon Transport in Holey Silicon

Block copolymer patterned holey silicon (HS) was successfully integrated into a microdevice for simultaneous measurements of Seebeck coefficient, electrical conductivity, and thermal conductivity of the same HS microribbon. These fully integrated HS microdevices provided excellent platforms for the systematic investigation of thermoelectric transport properties tailored by the dimensions of the periodic hole array, that is, neck and pitch size, and the doping concentrations. Specifically, thermoelectric transport properties of HS with a neck size in the range of 16-34 nm and a fixed pitch size of 60 nm were characterized, and a clear neck size dependency was shown in the doping range of 3.1 × 10 18 to 6.5 × 10 19 cm -3 . At 300 K, thermal conductivity as low as 1.8 ± 0.2 W/mK was found in HS with a neck size of 16 nm, while optimized zT values were shown in HS with a neck size of 24 nm. Finally, the controllable effects of holey array dimensions and doping concentrations on HS thermoelectric performance could aid in improving the understanding of the phonon scattering process in a holey structure and also in facilitating the development of silicon-based thermoelectric devices.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

On the Effects of Aliovalent Substitutions in Thermoelectric Zintl Pnictides. Varied Polyanionic Dimensionality and Complex Structural Transformations–The Case of Sr 3 ZnP 3 vs Sr 3 Al x Zn 1– x P 3

The structures and the transport properties of a novel family of Zintl phosphides and arsenides with the formula AE 3 ZnPn 3 and the solid solutions AE 3 Al x Zn 1–x Pn 3 , AE 3 ZnAs y P 1–y (AE = Sr, Eu; Pn = P, As) are reported. Crystals of nine new phases have been obtained via Pb-flux reactions and used for structural work by means of single-crystal X-ray diffraction methods. The derived orthorhombic structure is without a direct analog, and features unusual structural units, where the Zn atoms are in both distorted tetrahedral and trigonal-planar coordination of pnictogens. Electronic structure calculations reveal moderately wide bandgaps for Sr 3 ZnP 3 and Sr 3 ZnAs 3 , on the order of 0.70 and 0.63 eV, respectively. Electrical transport measurements above room temperature indicate relatively high resistivity values above 500 K (ρ ≈ 4.8 Ω cm and above), but some of the samples exhibit very high Seebeck coefficients, as large as 300 μV/K at 560 K for Sr 3 ZnAs 3 . Aliovalent substitutions in AE 3 ZnPn 3 , achieved by the partial replacement of Zn 2+ with Al 3+ cations promote occupational and positional disorder, which causes structural transformation towards the disordered variant of the Sr 5 Al 2 Sb 6 structure type. Such substitutions also change the dimensionality of the polyanionic sub-lattice in the resulting quaternary AE 3 Al x Zn 1–x Pn 3 phases. Furthermore, preliminary transport property data on the latter reveal nine times lower electrical resistivity (ρ 500 ≈ 0.5 Ω cm) together with a significantly enhanced Seebeck coefficient, αmax ≈ 430 μV/K at 560 K.

36 MATERIALS SCIENCE↗

Hot deformation induced defects and performance enhancement in FeSb{sub 2} thermoelectric materials

The effect of hot deformation induced defects and texture on thermoelectric properties of FeSb{sub 2} bulk crystals has been investigated. The transport properties of the samples along both parallel and perpendicular direction of pressing were measured from 3 K to 300 K. The results showed that thermal conductivity of the deformed samples was significantly reduced. After twice deformation, the thermal conductivity of the sample along the perpendicular direction of pressing was decreased to 4 W/mK, which was only one third of that before deformation. Transmission electron microscopy observation revealed the presence of high density of lattice defects in the deformed samples. The lattice thermal conductivity was analyzed using the Debye-Callaway approximation, and the results showed that the deformation induced lattice imperfections play an important role in enhancing phonon scattering. In addition, both the electrical resistivity and Seebeck coefficient exhibited a weak anisotropy in the deformed samples. The figure of merit ZT of the bulk FeSb{sub 2} was significantly improved from 0.010 to 0.021 after deformation.

36 MATERIALS SCIENCE↗

High pressure synthesis and thermoelectric properties of micro/nano structures CoSb{sub 3}

Nano-particle and defect have been proved to be effective in depressing the lattice thermal conductivity and improving the performance of thermoelectric materials. In this work, In{sub 0.5}Sn{sub x}Co{sub 4}Sb{sub 12} were prepared using a high pressure and high temperature (HPHT) method, In and Sn was assumed that In plays the role of a filler and occupies the Sb-icosahedron voids. Doping of In and Sn results in the defects, nanostructuring, and mesoscale structuring were all combined into a single skutterudite matrix. The thermoelectric properties were measured in the temperature range of 321–710 K. As expected, with the synthetic pressures increased,the thermal conductivity of samples improved significantly. The minimum value of In{sub 0.5}Sn{sub 0.4}Co{sub 4}Sb{sub 12} synthesized at 3.8 GPa is 1.79 Wm{sup −1} K{sup −1} and the highest Seebeck coefficient of sample In{sub 0.5}Sn{sub 0.2}Co{sub 4}Sb{sub 12} synthesized at 2.8 GPa reached 222 μV K{sup −1} finally. - Graphical abstract: Micro/nano structures CoSb{sub 3} could be quickly prepared by HPHT method, the defects, nanostructuring and mesoscale structuring are uniformly distributed in the whole sample. Display Omitted.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Enhanced thermoelectric performance of Mg 2 Si 1-x Sn x codoped with Bi and Cr

Magnesium silicides are favorable thermoelectric materials considering resource abundance and cost. Chromium (Cr) doping in magnesium silicides has not yet been explored. Using first-principles calculations, we have studied the stability of Mg 2 Si with chromium (1.85, 3.7, 5.55, and 6.25% Cr) and tin (12.5 and 50% Sn). Three Mg 2 Si compounds doped with Sn, (Sn + Bi), and (Sn + Bi + Cr) are used to explain doping effects on thermoelectric performance. Notably, Cr behaves nonmagnetically for ≤2%Cr, after which ferromagnetic ordering is favored (≤12.96% Cr), despite its elemental antiferromagnetic state. With alloying of Sn (70.4%), Mg 2 Si remains an indirect-band-gap semiconductor, but adding small amounts of Bi (3.7%) increases the carrier concentration such that electrons occupy conduction bands, making it a degenerate semiconductor. Mg 2 Si 0.296 Sn 0.666 Bi 0.037 is found to give the highest thermoelectric figure of merit (ZT) and power factor (PF) at 700 K, i.e., 1.75 and 7.04 mWm –1 K –2 , respectively. Adding small %Cr decreases ZT and PF to 0.78 and 4.33 mWm –1 K –2 , respectively. Such a degradation in thermoelectric (TE) performance is attributed to two factors: (i) uniform doping acting as an electron acceptor, decreasing conduction, and (ii) the loss of low-lying conduction band degeneracy with doping, decreasing the Seebeck coefficients. In conclusion, a study of configurations of Cr doping suggests that Cr has a tendency to form clusters inside the lattice, which play a crucial role in tuning the magnetic and TE performance of doped Mg 2 Si compounds.

36 MATERIALS SCIENCE↗

High thermoelectric performance of In, Yb, Ce multiple filled CoSb{sub 3} based skutterudite compounds

Filling voids with rare earth atoms is an effective way to lowering thermal conductivity which necessarily enhances thermoelectric properties of skutterudite compounds. Yb atom is one of the most effective species among the rare earth atoms for filling the voids in the skutterudite structure due to a large atomic mass, radius and it is intermediate valence state. In this work, we aim to find the best filling partners for Yb using different combinations of Ce and In as well as to optimize actual filling fraction in order to achieve high values of ZT. The traditional method of synthesis relying on melting-annealing and followed by spark plasma sintering was used to prepare all samples. The thermoelectric properties of four samples of Yb{sub 0.2}In{sub 0.2}Co{sub 4}Sb{sub 12}, Yb{sub 0.2}Ce{sub 0.15}Co{sub 4}Sb{sub 12}, Yb{sub 0.2}Ce{sub 0.15}In{sub 0.2}Co{sub 4}Sb{sub 12}, and Yb{sub 0.3}Ce{sub 0.15}In{sub 0.2}Co{sub 4}Sb{sub 12} (nominal) were examined based on the Seebeck coefficient, electrical conductivity, thermal conductivity, and Hall coefficient. Hall coefficient and Seebeck coefficient signs confirm that all samples are n-type skutterudite compounds. Carrier density increases with the increasing Yb+Ce content. A high power factor value of 57.7 {mu}W/K{sup 2}/cm for Yb{sub 0.2}Ce{sub 0.15}Co{sub 4}Sb{sub 12} and a lower thermal conductivity value of 2.82 W/m/K for Yb{sub 0.2}Ce{sub 0.15}In{sub 0.2}Co{sub 4}Sb{sub 12} indicate that small quantities of Ce with In may be a good partner to Yb to reduce the thermal conductivity further and thus enhance the thermoelectric performance of skutterudites. The highest ZT value of 1.43 was achieved for Yb{sub 0.2}Ce{sub 0.15}In{sub 0.2}Co{sub 4}Sb{sub 12} triple-filled skutterudite at 800 K. - Graphical abstract: Thermoelectric figure of merit of Yb{sub x}In{sub y}Ce{sub z}Co{sub 4}Sb{sub 12} (0{<=}x,y,z{<=}0.18 actual) compounds versus temperature. Highlights: Black-Right-Pointing-Pointer TE properties of Yb,In,Ce multiple-filled Yb{sub x}In{sub y}Ce{sub z}Co{sub 4}Sb{sub 12} skutterudites were investigated. Black-Right-Pointing-Pointer Thermal conductivity is strongly suppressed by multiple filling of Yb, Ce and In. Black-Right-Pointing-Pointer Small amounts of Ce and In with Yb are beneficial for the enhancement of TE performance. Black-Right-Pointing-Pointer The highest ZT=1.43 was achieved with Yb{sub 0.07}In{sub 0.094}Ce{sub 0.065}Co{sub 4}Sb{sub 11.92} at 800 K.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗