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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 505 records · Page 28
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

Reducing Spontaneous Orientational Polarization via Semiconductor Dilution Improves OLED Efficiency and Lifetime

Spontaneous orientational polarization (SOP) in the electron-transport layer (ETL) of organic light-emitting diodes (OLEDs) is increasingly recognized as a key factor influencing their performance. Here, we show that SOP is dramatically reduced in the common electron-transport material 2,2',2"-(1,3,5-benzinetriyl)-tris(1-phenyl-1-H-benzimidazole) by coevaporating it together with medium-density polyethylene. Eliminating SOP from the ETL of blue fluorescent OLEDs in this manner reduces their operating voltage by 0.5 V, increases their external quantum efficiency (EQE) by 30%, and leads to a threefold increase in device lifetime. We show that the EQE and lifetime improvements both originate from reduced exciton-polaron annihilation in the emissive layer, and that this leads to a functional relationship between the two quantities that can be used to quantify the rate of annihilation-induced degradation in the device. Furthermore, these results highlight a substantial opportunity to improve OLED performance by controlling SOP through semiconductor dilution and suggest that this capability can be used to systematically isolate and understand exciton-polaron degradation in the pursuit of stable blue OLEDs.

36 MATERIALS SCIENCE↗
NASA NTRS1980

Solar-pumped gas laser development

A survey of gas properties through detailed kinetic models led to the identification of critical gas parameters for use in choosing appropriate gas combinations for solar pumped lasers. Broadband photoabsorption in the visible or near UV range is required to excite large volumes of gas and to insure good solar absorption efficiency. The photoexcitation density is independent of the absorption bandwidth. The state excited must be a metastable state which is not quenched by the parent gas. The emission bandwidth must be less than 10 A to insure lasing threshold over reasonable gain lengths. The system should show a high degree of chemical reversibility and an insensitivity to increasing temperature. Other properties such as good quantum efficiency and kinetic efficiency are also implied. Although photoexcitation of electronic vibrational transitions is considered as a possible system if the emission bands sufficiently narrow, it appears that photodissociation into atomic metastables is more likely to result in a successful solar pumped laser system.

Wilson, J. W.↗
DOE OSTI2020

Superconducting nanowires as high-rate photon detectors in strong magnetic fields

Superconducting nanowire single photon detectors are capable of single-photon detection across a large spectral range, with near unity detection efficiency, picosecond timing jitter, and sub-10 µm position resolution at rates as high as 10 9 counts/s. In an effort to bring this technology into nuclear physics experiments, we fabricate Niobium Nitride nanowire detectors using novel material preparation methods and test their performance in strong magnetic fields. Furthermore, we demonstrate that these devices are capable of detection of 400 nm wavelength photons with saturated internal quantum efficiency at liquid helium temperatures and in magnetic fields potentially up to 8 T at high rates and with nearly zero dark counts.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2025

Hybrid Quantum Networks with Discrete Polarizations and Continuous Quadrature Variables

Final Scientific/Technical Report for DOE Project DE-SC0022069. Quantum communication and computation systems have evolved along two largely independent paradigms: discrete-variable (DV) systems that encode information in qubits such as photon polarizations or photon-number states, and continuous-variable (CV) systems that encode information in optical field quadratures. Each approach offers distinct advantages—DVs provide low error rates and compatibility with single-photon platforms, while CVs support deterministic operations and efficient quantum state manipulation. A fundamental challenge for building a scalable Quantum Internet lies in interfacing these two regimes into a unified hybrid architecture that can coherently distribute and process quantum information across heterogeneous quantum nodes. This project aims to develop and demonstrate a hybrid optical quantum network that seamlessly integrates DV and CV systems. Specifically, we investigate a new class of hybrid entanglement between the discrete polarizations of single photons and the continuous quadrature variables of optical cat states, overcoming incompatibilities in existing DV–CV demonstrations. Using this new entanglement resource, the team investigates a multi-node hybrid quantum local area network (Q-LAN) testbed capable of DV–CV entanglement generation, swapping, and distribution across fiber links.

74 ATOMIC AND MOLECULAR PHYSICS↗
DOE OSTI2022

OLEDs on planarized light outcoupling-enhancing structures in plastic

Light extraction from OLEDs remains a challenge. While consumer demand for OLEDs in display technology continues to grow as prices decline, commercial use of OLEDs in solid state lighting (SSL) applications is lagging due to low light extraction, which results in low efficiency. Previous studies have been directed toward increasing the light extraction factor η out , but cost effective approaches that will enable high throughput and potential upscaling, as well as elucidation of the extraction process, are still lagging. One promising approach is the use of buried light extraction enhancing patterns that are planarized with a high refractive index (RI) layer. When adding substrate mode extracting means, the highest external quantum efficiencies (EQEs) were achieved using a complex approach of planarized vacuum nano holes. Here we present η out -enhancing planarized extraction structures (PES) in plastic. While plastic substrates currently present long-term stability issues and other drawbacks, as we show, they provide a tool for simple, inexpensive, and rapid generation of various enhancing structures that importantly can be transferred to the preferred rigid and flexible glass substrates. Moreover, plastic substrates are attractive for biomedical applications. The successful structures we present are easily scalable periodic corrugations, e.g., with pitch a ~ 4.25 µm and pitch/depth ratio a/h ~2.4 planarized by a layer of RI ~1.9, resulting in maximal EQEs exceeding 60% for a green OLED and 48.5% for a white OLED. Comparable increased EQEs were achieved for structures with a ~ 15 and 16 µm, and a/h ~ 2.1 and 4, respectively. Enhanced extraction was also observed with a very simply fabricated quasiperiodic nanohole array, and surprisingly, with a random shallow design. The latter is at variance with simulations based on diffraction only. Results are discussed in terms of a, h, and structural parameters together with scattering matrix simulations to assess the effect of various PES parameters and the nanoparticle-embedded planarizing layer on η out . The experiments and simulations indicate contributions of diffraction, reflection, and scattering to EQE enhancement.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Efficient and bright white light-emitting diodes based on single-layer heterophase halide perovskites

At present, electric lighting accounts for ~15% of global power consumption and thus the adoption of efficient, low-cost lighting technologies is important. Here, halide perovskites have been shown to be good emitters of pure red, green and blue light, but an efficient source of broadband white electroluminescence suitable for lighting applications is desirable. Here, we report a white light-emitting diode (LED) strategy based on solution-processed heterophase halide perovskites that, unlike GaN white LEDs, feature only one broadband emissive layer and no phosphor. Our LEDs operate with a peak luminance of 12,200 cd m –2 at a bias of 6.6 V and a maximum external quantum efficiency of 6.5% at a current density of 8.3 mA cm –2 . Systematic in situ and ex situ characterizations reveal that the mechanism of efficient electroluminescence is charge injection into the α phase of CsPbI 3 , α to δ charge transfer and α–δ balanced radiative recombination. Future advances in fabrication technology and mechanistic understanding should lead to further improvements in device efficiency and luminance.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Demonstration of Spectral Selectivity of Efficient and Ultrafast GaN/AlGaN-Based Metal–Semiconductor–Metal Ultraviolet Photodiodes

Efficient and ultrafast (aluminum)-gallium-nitride-based metal-semiconductor-metal (Al x )Ga 1–x N ultraviolet photodiodes were implemented to investigate the spectral properties of GaN/AlGaN-based photodetectors. Al composition of the GaN templates were varied from 0-% to 30% to demonstrate the impact of Al mole fraction on the cutoff wavelength of these UV photodiodes. Asymmetric metal contact electrodes were fabricated to optimize the external quantum efficiency without compromising their ultrafast photoresponse. Here, the best performing devices exhibited a peak response of 4 V and an oscilloscope limited temporal pulse width of 61 ps at a 20-V bias with a peak spectral responsivity of 36.5 mA/W at 280 nm.

42 ENGINEERING↗
DOE OSTI2024

Development of electro-optical quantum transducers based on three-dimensional superconducting cavities

Quantum transducers enable the conversion of quantum information and signals between different physical platforms. Based on the pioneering works in three-dimensional superconducting cavity technology developed at Fermilab, we are advancing the development of three-dimensional microwave-optical transducers and exploring their applications in quantum information processing and sensing. We present our progress in the design, fabrication, and characterization of three-dimensional microwave cavities integrated with bulk lithium niobate resonators. The material characterization using three-dimensional cavities based on a resonant-type method allows for understanding of complex permittivity and loss mechanism of electro-optic materials at cryogenic temperatures. We also evaluate the potential of the high-efficiency quantum transducers in enhancing the performance of quantum sensors for applications such as dark matter detection, compared to conventional homodyne detection approaches. This manuscript has been authored by Fermi Research Alliance, LLC under Contract No. DE-AC0207CH11359 with the U.S. Department of Energy, Office of Science, Office of High Energy Physics. This work is funded by the DOE's Early Career Research Program. This research used resources of the U.S. Department of Energy, Office of Science, National Quantum Information Science Research Centers, Superconducting Quantum Materials and Systems Center (SQMS) under Contract No. DE-AC02-07CH11359.

Zorzetti, Silvia↗
NASA NTRS1989

InP shallow-homojunction solar cells

Indium phosphide solar cells with very thin n-type emitters have been made by both ion implantation and metalorganic chemical vapor deposition. Air mass zero efficiencies as high as 18.8 percent (NASA measurement) have been achieved. Although calculations show that, as is the case with GaAs, a heterostructure is expected to be required for the highest efficiencies attainable, the material properties of InP give the shallow-homojunction structure a greater potential than in the case of GaAs. The best cells, which were those made by ion implantation, show open-circuit voltage (V sub oc) of 873 mV, short-circuit current of 357 A/sq m (35.7 mA/sq cm), and fill factor of 0.829. Improvements are anticipated in all three of these parameters. Internal quantum efficiency peaks at over 90 percent in the red end of the spectrum, but drops to 54 percent in the blue end. Other cells have achieved 74 percent in the blue end. Detailed modeling of the data indicates that a high front surface recombination velocity is responsible for the low blue response, that the carrier lifetime is high enough to allow good carrier collection from both the base and the emitter, and that the voltage is base-limited.

Keavney, Christopher↗
DOE OSTI2026

Eutectic Processing of Semiconductor Colloidal Nanocrystals for Energy Applications

Colloidal semiconductor nanocrystals (NCs) offer a costeffective platform for light-energy conversion in X-ray scintillators, photovoltaics, lasers, and display technologies. Yet, device-relevant NCs often require complex heterostructured compositions, where lattice imperfections compromise the efficiency and stability of photoconversion processes. Here, we show that a simple synthetic detour through a eutectic state of II−VI semiconductor NCs (e.g., CdSe, ZnSe) with halide salts (e.g., CdCl 2 , ZnCl 2 ) overcomes this limitation by melting and reconstructing NC lattices into defect-free alloyed and core/shell architectures. Applied to ternary CdSeTe NCs, this process produces downconverters with record brightness and minimal line widths, delivering a 3-fold increase in film-side external quantum efficiency of commercial CdTe photovoltaic modules (First Solar Inc.). Meanwhile, eutectic processing of CdSe-based core/shell emitters yields an 8-fold enhancement in their photoluminescence stability under backlight operation, addressing the reliability bottleneck for display technologies. Together, these findings establish eutectic NC processing as a scalable route to efficient, durable photoconversion materials for energy applications.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2025

Efficiency cliff in scaling InGaN light-emitting diodes down to submicron

The top-down submicron fabrication of blue-emitting light-emitting diodes on Qromis Substrate Technology substrates is reported. Light-emitting diodes with mesa sizes as small as 250 × 250 nm 2 show ideal forward voltage and low leakage current density. It is observed that sidewall treatment and passivation methods used in micro-light-emitting diodes (2–20 μ m) do not lead to the same level of sidewall recombination suppression for submicron ones (< 1 μ m), as evidenced by a ∼70% decrease in peak external quantum efficiencies when mesa sizes are scaled from 2 μ m down to 250 nm. This is attributed to the lateral carrier diffusion being comparable to the mesa size, regardless of the sidewall passivation and recovery. The results call for rethinking the impact of sidewalls in emerging top-down fabricated (sub)micrometer-light-emitting diodes.

42 ENGINEERING↗
NASA NTRS2005

Indium Phosphide Window Layers for Indium Gallium Arsenide Solar Cells

Window layers help in reducing the surface recombination at the emitter surface of the solar cells resulting in significant improvement in energy conversion efficiency. Indium gallium arsenide (In(x)Ga(1-x)As) and related materials based solar cells are quite promising for photovoltaic and thermophotovoltaic applications. The flexibility of the change in the bandgap energy and the growth of InGaAs on different substrates make this material very attractive for multi-bandgap energy, multi-junction solar cell approaches. The high efficiency and better radiation performance of the solar cell structures based on InGaAs make them suitable for space power applications. This work investigates the suitability of indium phosphide (InP) window layers for lattice-matched In(0.53)Ga(0.47)As (bandgap energy 0.74 eV) solar cells. We present the first data on the effects of the p-type InP window layer on p-on-n lattice-matched InGaAs solar cells. The modeled quantum efficiency results show a significant improvement in the blue region with the InP window. The bare InGaAs solar cell performance suffers due to high surface recombination velocity (10(exp 7) cm/s). The large band discontinuity at the InP/InGaAs heterojunction offers a great potential barrier to minority carriers. The calculated results demonstrate that the InP window layer effectively passivates the solar cell front surface, hence resulting in reduced surface recombination and therefore, significantly improving the performance of the InGaAs solar cell.

Jain, Raj K.↗
DOE OSTI2023

Control of Host-Matrix Morphology Enables Efficient Deep-Blue Organic Light-Emitting Devices

Mixing a sterically bulky, electron-transporting host material into a conventional single host–guest emissive layer is demonstrated to suppress phase separation of the host matrix while increasing the efficiency and operational lifetime of deep-blue phosphorescent organic light-emitting diodes (PHOLEDs) with chromaticity coordinates of (0.14, 0.15). Here, the bulky host enables homogenous mixing of the molecules comprising the emissive layer while suppressing single host aggregation; a significant loss channel of nonradiative recombination. By controlling the amorphous phase of the host-matrix morphology, the mixed-host device achieves a significant reduction in nonradiative exciton decay, resulting in 120 ± 6% increase in external quantum efficiency relative to an analogous, single-host device. In contrast to single host PHOLEDs where electrons are transported by the host and holes by the dopants, both charge carriers are conducted by the mixed host, reducing the probability of exciton annihilation, thereby doubling of the deep-blue PHOLED operational lifetime. These findings demonstrate that the host matrix morphology affects almost every aspect of PHOLED performance.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Resilience of High-Efficiency CdSeTe:As and CdSeTe:Cu Solar Cells to Proton Irradiation

Power generation in space is currently dominated by expensive III-V multi-junction photovoltaic (PV) devices and cheap crystalline silicon (c-Si) PV devices. Both of these technologies degrade rapidly in proton-radiation-rich space environments, such as the Van Allen belt. The present study of cadmium selenide telluride- (CdSeTe-) based PV devices exposed to 150-to-1500 keV proton irradiation with fluences up to 9 x 1013 cm-2 reveal a more radiation-hard alternative to III-V and c-Si PV technologies. We report on measurement and analysis of current density vs voltage (JV), external quantum efficiency (EQE), external radiative efficiency, and capacitance vs voltage (CV) characteristics. JV characteristics of As-doped CdSeTe devices show 80% remaining power conversion efficiency (PCE) relative to unexposed controls when exposed to 650 keV protons at a fluence of 1012 cm-2. Under these same irradiation conditions, Cu-doped CdSeTe devices demonstrate an even better 95% PCE retention compared with unirradiated control devices. Evidence of radiation-induced absorber p-type doping compensation is observed in the glass-side EQE at 0 V and CV characteristics of most of the irradiated CdSeTe:As devices, but clear compensation is evident only for the most heavily irradiated CdSeTe:Cu devices. Elevated blue-green photocurrent in the film-side 0 V EQE suggests a buried junction in the most heavily irradiated CdSeTe:As devices. Although CdSeTe:Cu devices are the more resilient of the CdSeTe structures, both CdSeTe-based technologies are radiation-hard when compared to c-Si and III-V multi-junction PV.

14 SOLAR ENERGY↗
DOE OSTI2020

High-efficiency solar thermophotovoltaic system using a nanostructure-based selective emitter

Herein, we present the design, fabrication, optimization, and experimental results of a high-efficiency planar solar thermophotovoltaic (STPV) system utilizing a micro-textured absorber and a nanostructure multilayer metal-dielectric coated selective emitter fabricated on a tungsten (W) substrate. Light absorptance of more than 90% was achieved at visible and near-infrared wavelengths using the microtextured absorbing surface. The nanostructure selective emitter consists of two thin-film optical coatings of silicon nitride (Si3N4) and a layer of W in between to increase the surface emissivity in spectral regimes matching the quantum efficiency of the thermophotovoltaic (TPV) cells. Gallium antimonide (GaSb)-based TPV cells are used in our STPV design. The experiment was conducted at different operating temperatures using a high-power continuous wave laser diode stack as a simulated source of concentrated incident radiation. Our experimental setup measured a maximum electrical output power density of 1.71 W/cm 2 at 1676 K STPV temperature, and the overall power conversion efficiency of 8.4% after normalizing the output power density to the emitter area. This is the highest STPV system efficiency reported so far for any experimental STPV device. The incident optical laser power on the absorber side was 131 W. This is equivalent to a solar concentration factor of ~2100, which is within the practical limit and readily achievable with Fresnel lens setup.

14 SOLAR ENERGY↗
DOE OSTI2024

Surface-binding molecular multipods strengthen the halide perovskite lattice and boost luminescence

Reducing the size of perovskite crystals to confine excitons and passivating surface defects has fueled a significant advance in the luminescence efficiency of perovskite light-emitting diodes (LEDs). However, the persistent gap between the optical limit of electroluminescence efficiency and the photoluminescence efficiency of colloidal perovskite nanocrystals (PeNCs) suggests that defect passivation alone is not sufficient to achieve highly efficient colloidal PeNC-LEDs. Here, we present a materials approach to controlling the dynamic nature of the perovskite surface. Our experimental and theoretical studies reveal that conjugated molecular multipods (CMMs) adsorb onto the perovskite surface by multipodal hydrogen bonding and van der Waals interactions, strengthening the near-surface perovskite lattice and reducing ionic fluctuations which are related to nonradiative recombination. The CMM treatment strengthens the perovskite lattice and suppresses its dynamic disorder, resulting in a near-unity photoluminescence quantum yield of PeNC films and a high external quantum efficiency (26.1%) of PeNC-LED with pure green emission that matches the Rec.2020 color standard for next-generation vivid displays.

36 MATERIALS SCIENCE↗