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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 505 records · Page 28
All sourcesNASA NTRSDOE OSTI
NASA NTRS1977

Nondestructive determination of the depth of planar p-n junctions by scanning electron microscopy

A method was developed for measuring nondestructively the depth of planar p-n junctions in simple devices as well as in integrated-circuit structures with the electron-beam induced current (EBIC) by scanning parallel to the junction in a scanning electron microscope (SEM). The results were found to be in good agreement with those obtained by the commonly used destructive method of lapping at an angle to the junction and staining to reveal the junction.

Chi, J.-Y.↗
NASA NTRS1978

On strontium isotopic anomalies and odd-A p-process abundances

Several aspects of the nucleosynthesis of Sr isotopes are considered in an attempt to shed light on the problem of the Sr isotopic anomalies discovered in an inclusion of the Allende meteorite. Decomposition of the Sr isotopes into average r-, s-, and p-process nucleosynthetic classes is performed. It is suggested that the Allende inclusion most likely has an excess of s-process Sr and that the initial Sr-87/Sr-86 isotopic ratio is probably slightly more primitive than basaltic achondrites. The results also show that Sn-115 is mostly due to the r-process and that odd-A yields are very small. It is concluded that if the Sr anomaly in the inclusion is an average s enhancement, it argues somewhat in favor of a model of gas/dust fractionation of s and r isotopes during accumulation of the inclusion parent in the protosolar cloud.

Clayton, D. D.↗
NASA NTRS1980

Ohmic contact to p-type indium phosphide

Low-Series-resistance ohmic contact to p-type InP semiconductor material is achieved in technique utilizing Au-Ge-Zn eutectic alloy. Alloy sets and adheres well to semiconductor surface with higher acceptor concentration at metal semiconductor interface. Technique has provided satisfactory for pn junction LED's and lasers.

Hawrylo, F. Z.↗
NASA NTRS1979

On the determination of diffusion lengths by means of angle-lapped p-n junctions

A standard procedure for determining the minority carrier diffusion length by means of SEM consists of scanning an angle-lapped surface of a p-n junction and measuring the resulting short circuit current as a function of beam position. The present paper points out that the usual expression linking the short circuit current induced by the electron beam to the angle between the semiconductor surface and the junction plane is incorrect. The correct expression is discussed and it is noted that, for angles less than 10 deg, the new and the old expression are practically indistinguishable.

Von Roos, O.↗
NASA NTRS1979

The effect of a radial rotational velocity gradient on p-mode eigenfrequencies

The splitting of p-mode eigenfrequencies due to a depth-dependent solar rotation rate is considered. It is shown that to a first approximation this splitting can be treated as resulting from the translation of the wave pattern across the field of view with a velocity equal the actual velocity at a depth called the effective depth. The effective depths for a model solar envelope with l/H = 3 are presented as a function of position on the (kh, omega)-plane. The combination of omega near 0.025/s and kh near 0 yields the deepest probe of the solar envelope. For this same combination of kh and omega it is possible to resolve individual groups of eigenmodes in frequency but not in spatial wavenumber. Achievement of this resolution observationally may permit a determination of the lifetime of these particular modes.

Ulrich, R. K.↗
NASA NTRS1978

Comprehensive thermoelectric properties of n- and p-type 78a/o Si - 22a/o Ge alloy

The time and temperature dependence of the thermoelectric properties on n- and p-type 78 a/o Si - 22 a/o Ge alloy are presented in detail for the range of temperatures of zero to 1000 C and operating times up to twelve years. The mechanisms responsible for the time dependence of the properties are discussed and mathematical models used in the derivation of the property values from experimental data are presented. The thermoelectric properties for each polarity type of the alloy are presented as a function of temperature for various operating times.

Raag, V.↗
NASA NTRS1979

Auger recombination in heavily doped shallow-emitter silicon p-n-junction solar cells, diodes, and transistors

A rigorous analytic evaluation of an emitter model that includes Auger recombination but excludes bandgap narrowing is presented. It is shown that such a model cannot explain the experimentally observed values of the open-circuit voltage in p-n-junction silicon solar cells. Thus physical mechanisms in addition to Auger recombination are responsible for the experimentally observed values of the open-circuit voltage in silicon solar cells and the common-emitter current gain in bipolar transistors.

Shibib, M. A.↗
NASA NTRS1979

The importance of surface recombination and energy-bandgap narrowing in p-n-junction silicon solar cells

Experimental data demonstrating the sensitivity of open-circuit voltage to front-surface conditions are presented for a variety of p-n-junction silicon solar cells. Analytical models accounting for the data are defined and supported by additional experiments. The models and the data imply that a) surface recombination significantly limits the open-circuit voltage (and the short-circuit current) of typical silicon cells, and b) energy-bandgap narrowing is important in the manifestation of these limitations. The models suggest modifications in both the structural design and the fabrication processing of the cells that would result in substantial improvements in cell performance. The benefits of one such modification - the addition of a thin thermal silicon-dioxide layer on the front surface - are indicated experimentally.

Fossum, J. G.↗
NASA NTRS1980

Data analysis of P sub T/P sub S noseboom probe testing on F100 engine P680072 at NASA Lewis Research Center

Results from the altitude testing of a P sub T/P sub S noseboom probe on the F100 engine are discused. The results are consistent with sea level test results. The F100 engine altitude test verified automatic downmatch with the engine pressure ratio control, and backup control inlet case static pressure demonstrated sufficient accuracy for backup control fuel flow scheduling. The production P6 probe measured Station 6 pressures accurately for both undistorted and distorted inlet airflows.

Foote, C. H.↗
NASA NTRS1980

Method of mitigating titanium impurities effects in p-type silicon material for solar cells

Microstructural evaluation tests performed on Cu-doped, Ti-doped and Cu/Ti doped p-type silicon single crystal wafers, before and after the solar cell fabrication, and evaluation of both dark forward and reverse I-V characteristic records for the solar cells produced from the corresponding silicon wafers, show that Cu mitigates the unfavorable effects of Ti, and thus provides for higher conversion efficiency, thereby providing an economical way to reduce the deleterious effects of titanium, one of the impurities present in metallurgical grade silicon material.

Salama, A. M.↗
NASA NTRS1980

Thin n-i-p radiation-resistant solar cell feasibility study

Silicon solar cells were fabricated to verify the predictions that: (1) thin n(+)pp(+) cells can provide high values of open circuit voltage even when high resistivity base material ( 1000 omega-cm) is used; (2) cells with good p(+) back contacts will display an increase in open circuit voltage with decreasing cell thickness; and (3) high quality, thin, high resistivity, solar cells can be made using processing compatible with conventional practice. Analysis of I-V and spectral response measurements of these cells confirmed theoretical predictions and thereby pointed to voltages beyond the near 600 mV obtained in this study.

Allison, J. F.↗
NASA NTRS1980

The determination of transport parameters of minority carriers in n-p junctions by means of an electron microscope - Critique of recent developments

It has recently been shown that amplitude modulated electron beams provide a novel means for the determination of minority carrier lifetimes, diffusion lengths, etc., in n-p junctions. In this paper it is shown that: (1) a recently published analysis based on a cylindrically symmetric configuration is incorrect, (2) the correct approach leads to a system of dual integral equations for which the formal solution is given, (3) in general, the short circuit current can only be determined by means of extensive computer calculations except in the case of large front surface recombination velocities, and (4) the difficulties encountered with cylindrically symmetric configurations (circular ohmic contacts and the like) are completely avoided with a choice of a planar geometry since simple closed form expressions for the short circuit current are readily available in this case.

Von Roos, O.↗
NASA NTRS1980

Post-breakdown bulk oscillations in gold-doped silicon p/+/-i-n/+/ double-injection diodes

Experimental results on postbreakdown bulk oscillations in n-type gold-doped phosphorus-compensated p(+)-i-n(+) double-injection diodes is presented. It is suggested that changes observed in the postbreakdown oscillation frequency and amplitude are due to changes in the prebreakdown characteristics. An empirical relationship for the frequency of oscillation is derived. It is concluded that the postbreakdown oscillations are drift-related, although their exact mechanism is not known.

Mantha, B.↗
NASA NTRS1980

Formate esters of 1,2-ethanediol - Major decomposition products of p-dioxane during storage

Research done on detecting the contaminants of p-dioxane that cause a positive response for highly reactive acyl groups is discussed. Attention is given to the fact that the positive hydroxamate response might indicate an unsuspected hazard. It is found that all acyl groups transferred are formyl groups, and the mono- and diformates of 1,2-ethanediol are identified as major sources of this activity. It is also found that the formate esters are formed by way of peroxide intermediates. Concentrations of the formate ester group as high as 1.8 M are found in partially consumed bottles of dioxane but not in other common ethers stored under similar conditions. Attention is called to the possibility that the exposure to the glycol formates is probably much wider than expected. It is noted that by purging containers of dioxane with nitrogen each time they are opened and storing them in the cold away from light can prevent both the economic loss and possible health hazard caused by contamination with peroxide and formate ester.

Jewett, D.↗
NASA NTRS1981

Phase-correlated P Cygni profile variations of the C III multiplet in UW Canis Majoris

The interacting close binary system UW CMa has been observed, in the wavelength range from 1161 to 1188 A, continuously during a complete orbital cycle in 1979 with the Copernicus (OAO-3) U2 spectrometer. The C III multiplet at 1175 A, observed as a P Cygni feature, exhbits a clear dependence on the orbital phase of the binary; the radial velocity variation of this feature lags behind that of the O7 primary component by 0.1 orbital phase, which agrees with the anticipations in an earlier study by the same authors. The radiation-driven matter, flowing out of the binary, originates in the primary component.

Drechsel, H.↗
NASA NTRS1981

Annealing and anomalous high-energy electron irradiation effects in low-cost silicon N+P solar cells

Silicon solar cells of N(+)P type were subjected to 1 MeV electron irradiation (up to 10 to the 16th electrons/sq cm) and then annealed at 450 C for 20 min or annealed with no electron irradiation. Electron irradiation resulted in a degradation of longer wavelength cell response, but produced a marked enhancement of response at shorter wavelengths with a peak change of 40% at 0.44 microns. Subsequent thermal anneal at 450 C reduced the long-wavelength degradation, but enhancement at shorter wavelengths persisted. Excitation at the shorter wavelengths was in the N(+)-diffused layer and in the junction region of the cell. Anneal of unirradiated cells produced shorter-wavelength enhancement with a similar peaking at 0.44 microns, but with a relative change of only 20%. More enhancement was produced in the longer wavelength region (up to 0.8 microns). These effects in the different cell regions are explained by a decrease in the interstitial oxygen-impurity complexes (deep recombination levels) and the formation of substantial oxygen-silicon vacancy centers (donors).

Garlick, G. F. J.↗
NASA NTRS1980

Lunar highland rocks - Element partitioning among minerals. II - Electron microprobe analyses of Al, P, Ca, Ti, Cr, Mn and Fe in olivine

Lunar olivines from anorthosites, granulitic impactites, and rocks in the Mg-rich plutonic trend were subjected to electron probe measurements for Al, P, Ca, Ti, Cr and Mn, which show that the FeO/MnO ratio for lunar olivines lies between 80 and 110 with little difference among the rock types. The low values of Ca in lunar olivines indicate slow cooling to subsolidus temperatures, with blocking temperatures of about 750 C for 67667 and 1000 C for 60255,73-alpha determined by the Finnerty and Boyd (1978) experiments. An important paradox is noted in the low Ti content of Fe-rich olivines from anorthosites, although both Ti and Fe tend to become enriched in liquid during fractional distillation. Except for Ca and Mn, olivine from anorthosites has lower minor element values than other rock types. Formation from a chemically distinct system is therefore implied.

Smith, J. V.↗
NASA NTRS1982

Microhardness studies on thin carbon films grown on P-type, (100) silicon

A program to grow thin carbon films and investigate their physical and electrical properties is described. Characteristics of films grown by rf sputtering and vacuum arc deposition on p type, (100) silicon wafers are presented. Microhardness data were obtained from both the films and the silicon via the Vickers diamond indentation technique. These data show that the films are always harder than the silicon, even when the films are thin (of the order of 1000 A). Vacuum arc films were found to contain black carbon inclusions of the order of a few microns in size, and clusters of inclusions of the order of tens of microns. Transmission electron diffraction showed that the films being studied were amorphous in structure.

Kolecki, J. C.↗