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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 505 records · Page 28
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

Position Papers for the ASCR Workshop on the Management and Storage of Scientific Data

The purpose of this workshop is to identify priority research directions in the area of data management for high-performance and scientific computing above and beyond HPC’s traditional "the parallel file system is the data-management system" model. Supporting the breadth of the DOE mission, including the explosion of AI uses and the growing needs of experimental and observational science, motivates revisiting our assumptions about data management. There are many facets of this topic to explore including: (1) Interfaces for accessing data that resides on traditional persistent storage as well as memory devices; (2) Storage-system architecture design that supports scientific workflows on varied hierarchical storage and networking devices; (3) Devising metadata management infrastructure to support FAIR principles (Findability, Accessibility, Interoperability, and Reusability); (4) Capturing provenance information about scientific data; (5) Utilizing AI to learn I/O patterns of emerging workloads for efficient data management; (6) Providing data management support for AI and complex workflows; and (7) Understanding the overlap between traditional storage systems and I/O (SSIO) efforts and data management. While the program committee has identified these topics as important areas for discussion, we welcome position papers from the community that propose additional topics of interest for discussion at the workshop. The workshop agenda will include breakout sessions for discussing these and selected topic areas to inform priority research directions for data management for high-performance and scientific computing.

97 MATHEMATICS AND COMPUTING↗
DOE OSTI2022

Report for the ASCR Workshop on the Management and Storage of Scientific Data

The purpose of this workshop is to identify priority research directions in the area of data management for high-performance and scientific computing above and beyond HPC’s traditional "the parallel file system is the data-management system" model. Supporting the breadth of the DOE mission, including the explosion of AI uses and the growing needs of experimental and observational science, motivates revisiting our assumptions about data management. There are many facets of this topic to explore including: (1) Interfaces for accessing data that resides on traditional persistent storage as well as memory devices; (2) Storage-system architecture design that supports scientific workflows on varied hierarchical storage and networking devices; (3) Devising metadata management infrastructure to support FAIR principles (Findability, Accessibility, Interoperability, and Reusability); (4) Capturing provenance information about scientific data; (5) Utilizing AI to learn I/O patterns of emerging workloads for efficient data management; (6) Providing data management support for AI and complex workflows; and (7) Understanding the overlap between traditional storage systems and I/O (SSIO) efforts and data management. While the program committee has identified these topics as important areas for discussion, we welcome position papers from the community that propose additional topics of interest for discussion at the workshop. The workshop agenda will include breakout sessions for discussing these and selected topic areas to inform priority research directions for data management for high-performance and scientific computing.

97 MATHEMATICS AND COMPUTING↗
DOE OSTI2023

Quantum criticality and topology in non-equilibrium systems

A key goal of condensed matter physics research is to identify new phases of matter, and to understand the universal features of the phase transitions between them. In the past decade, physicists have uncovered a wealth of new phases with interesting surface properties, exemplified by the theoretical prediction and subsequent experimental discovery of topological insulators and superconductors. Traditional condensed matter systems are usually in a thermal equilibrium state and typically at very low temperature. Very recently, experimental advances have sparked interest in the non-equilibrium setting. Non-equilibrium systems can host new phases and phenomena with no equilibrium counterpart, and could also enable robust ways to build quantum memory devices to store and manipulate quantum information in a coherent manner. These phases and phenomena are inherently “dynamical”: they are described not by changes in the arrangement or structure of the constituent particles, but instead marked by sharp distinctions in how the particles move and exchange energy or quantum information. The discovery of robust non-equilibrium phases raises many fundamental questions: Can we develop a systematic theory of states of matter and of dynamical transitions between such states? How can such states be realized and probed experimentally? The main goal of this project was to explore the emergence of topological phases and quantum criticality (two cornerstones of modern condensed matter physics in equilibrium) in such non-equilibrium quantum systems. Specific goals included (1) using tensor networks to efficiently represent non-equilibrium states of matter and their phase transitions; (2) studying and designing new probes for periodically driven systems; and (3) developing analytic and numerical tools to analyze non-equilibrium topological phase transitions. Advances in these directions were achieved using novel techniques appropriate to study the non-equilibrium dynamics in many-body quantum systems combining strong interactions and randomness. Taken together, these results provide a new conceptual framework for understanding the emergence of quantum critical and topological properties in quantum systems far from thermal equilibrium.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2025

Properties of Electronic Materials

This final technical report summarizes the research conducted under DOE Grant DE-SC0002623, "Properties of Electronic Materials," led by Principal Investigator Shengbai Zhang at Rensselaer Polytechnic Institute. Over the 16-year period, the project employed first-principles computational methods to investigate the structural, electronic, and dynamic properties of a wide range of electronic materials, with applications in energy technologies, optoelectronics, and data storage. Key areas included topological insulators, phase-change materials, graphene and two-dimensional systems, perovskites for photovoltaics, defect engineering in semiconductors, kagome lattices, and ultrafast carrier dynamics. The research resulted in 115 peer-reviewed publications, advancing fundamental understanding of material behaviors at the atomic scale and contributing to innovations in renewable energy, memory devices, and quantum materials. Findings have implications for improving energy efficiency, developing lead-free solar cells, and enabling high-speed data processing. The work has trained numerous graduate students and postdocs, fostering the next generation of computational materials scientists. The original goals were to develop theoretical models and computational tools to predict and optimize electronic properties of materials for energy applications. All objectives were accomplished, with no major departures from planned methodologies. Challenges in computational scaling were addressed through access to high-performance computing resources.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Atomic layer deposition and its derivatives for extreme ultraviolet (EUV) photoresist applications

Solution-processed photoresists have been forerunners in semiconductor patterning for decades. Even with the drastic reduction in photolithography wavelength, traditional spin-on resists still support the fabrication of the most advanced, sub-5 nm node logic and memory devices using EUV lithography (EUVL) (λ = 13.5 nm). However, trade-off between resolution, sensitivity, and roughness in the conventional resists pose a critical challenge in the race towards device downscaling to 1 nm node. While great efforts are being made to improve spin-on EUV photoresist performance, there has been emergence of new approaches focused on developing novel resists via vapor-phase processing routes, such as atomic layer deposition (ALD) and its analogs. This review summarizes recent advances in EUVL photoresist development based on ALD and its derivative techniques, which include ALD-based inorganic–organic dry resists and hybrid resists synthesized by infiltrating conventional spin-on resists. Despite being in the early stage, initial studies have shown the great potential of ALD applications in EUVL photoresist development.

36 MATERIALS SCIENCE↗
NASA NTRS1966

Thin-film ferrites vapor deposited by one-step process in vacuum

Thin-film ferrites are formed by vapor deposition of a mixture of powdered ferrites and powdered boron oxide at controlled temperatures in a vacuum chamber. These films are used in memory devices for computers and as thin-film inductors in communications and telemetry systems.

Hacskaylo, M.↗
NASA NTRS1970

Digital input is buffered to real-time analog display

Buffering technique utilizes nine-bit binary counter and holding register of eight flip-flops. These flip-flops form the memory device that allows precise asynchronous conversion of the digital source data. Counter generates a waveform which is passed through a low pass filter to recover data in analog form.

Bower, K. F.↗
NASA NTRS1972

Investigation of single crystal ferrite thin films

Materials suitable for use in magnetic bubble domain memories were developed for aerospace applications. Practical techniques for the preparation of such materials in forms required for fabrication of computer memory devices were considered. The materials studied were epitaxial films of various compositions of the gallium-substituted yttrium gadolinium iron garnet system. The major emphasis was to determine their bubble properties and the conditions necessary for growing uncracked, high quality films.

Mee, J. E.↗
NASA NTRS1972

Computer-controlled environmental test systems - Criteria for selection, installation, and maintenance.

Applications for presently marketed, new computer-controlled environmental test systems are suggested. It is shown that capital costs of these systems follow an exponential cost function curve that levels out as additional applications are implemented. Some test laboratory organization changes are recommended in terms of new personnel requirements, and facility modification are considered in support of a computer-controlled test system. Software for computer-controlled test systems are discussed, and control loop speed constraints are defined for real-time control functions. Suitable input and output devices and memory storage device tradeoffs are also considered.

Chapman, C. P.↗
NASA NTRS1975

Preliminary data processing system for telemetry data from Interkosmos-8 type satellites

The preliminary data processing system (PDPS), a set of algorithms, programs, equipment, data storage and memory devices, and all devices controlling the processing, is described using the Intercosmos-8 satellite as an example. Each stage of the system is considered along with its content and sequence. The essential elements of the data processing structure are described and the concepts underlying the selection of these elements are discussed.

Vilchinskaya, A. S.↗
NASA NTRS1975

Multipurpose panel, phase 1, study report

The feasibility of a multipurpose panel which provides a programmable electronic display for changeable panel nomenclature, multiplexes similar indicator display signals to the signal display, and demultiplexes command signals is examined. Topics discussed include: electronic display technology, miniaturized electronic and memory devices, and data management systems which employ digital address and multiplexing.

Parkin, W.↗
NASA NTRS1976

Microelectronic components and metallic oxide studies and applications

The project involved work in two basic areas: (1) Evaluation of commercial screen printable thick film conductors, resistors, thermistors and dielectrics as well as alumina substrates used in hybird microelectronics industries. Results of tests made on materials produced by seven companies are presented. (2) Experimental studies on metallic oxides of copper and vanadium, in an effort to determine their electrochemical properties in crystalline, powder mixtures and as screen printable thick films constituted the second phase of the research effort. Oxide investigations were aimed at finding possible applications of these materials as switching devices memory elements and sensors.

Williams, L., Jr.↗
NASA NTRS1980

Titan probe technology assessment and technology development plan study

The need for technology advances to accomplish the Titan probe mission was determined by defining mission conditions and requirements and evaluating the technology impact on the baseline probe configuration. Mission characteristics found to be technology drivers include (1) ten years dormant life in space vacuum; (2) unknown surface conditions, various sample materials, and a surface temperature; and (3) mission constraints of the Saturn Orbiter Dual Probe mission regarding weight allocation. The following areas were identified for further development: surface sample acquisition system; battery powered system; nonmetallic materials; magnetic bubble memory devices, and the landing system. Preentry science, reliability, and weight reduction and redundancy must also be considered.

Castro, A. J.↗
NASA NTRS1980

Proton upsets in LSI memories in space

Two types of large scale integrated dynamic random access memory devices were tested and found to be subject to soft errors when exposed to protons incident at energies between 18 and 130 MeV. These errors are shown to differ significantly from those induced in the same devices by alphas from an Am-241 source. There is considerable variation among devices in their sensitivity to proton-induced soft errors, even among devices of the same type. For protons incident at 130 MeV, the soft error cross sections measured in these experiments varied from 10 to the -8th to 10 to the -6th sq cm/proton. For individual devices, however, the soft error cross section consistently increased with beam energy from 18-130 MeV. Analysis indicates that the soft errors induced by energetic protons result from spallation interactions between the incident protons and the nuclei of the atoms comprising the device. Because energetic protons are the most numerous of both the galactic and solar cosmic rays and form the inner radiation belt, proton-induced soft errors have potentially serious implications for many electronic systems flown in space.

Mcnulty, P. J.↗
NASA NTRS1981

CMOS RAM cosmic-ray-induced-error-rate analysis

A significant number of spacecraft operational anomalies are believed to be associated with cosmic-ray-induced soft errors in the LSI memories. Test programs using a cyclotron to simulate cosmic rays have established conclusively that many common commercial memory types are vulnerable to heavy-ion upset. A description is given of the methodology and the results of a detailed analysis for predicting the bit-error rate in an assumed space environment for CMOS memory devices. Results are presented for three types of commercially available CMOS 1,024-bit RAMs. It was found that the HM6508 is susceptible to single-ion induced latchup from argon and krypton ions. The HS6508 and HS6508RH and the CDP1821 apparently are not susceptible to single-ion induced latchup.

Pickel, J. C.↗