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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 505 records · Page 28
All sourcesNASA NTRSDOE OSTI
DOE OSTI2015

SU-E-T-758: To Determine the Source Dwell Positions of HDR Brachytherapy Using 2D 729 Ion Chamber Array

Purpose: Determination of source dwell positions of HDR brachytherapy using 2D 729 ion chamber array Methods: Nucletron microselectron HDR and PTW 2D array were used for the study. Different dwell positions were assigned in the HDR machine. Rigid interstitial needles and vaginal applicator were positioned on the 2D array. The 2D array was exposed for this programmed dwell positions. The positional accuracy of the source was analyzed after the irradiation of the 2D array. This was repeated for different dwell positions. Different test plans were transferred from the Oncentra planning system and irradiated with the same applicator position on the 2D array. The results were analyzed using the in house developed excel program. Results: Assigned dwell positions versus corresponding detector response were analyzed. The results show very good agreement with the film measurements. No significant variation found between the planned and measured dwell positions. Average dose response with 2D array between the planned and nearby dwell positions was found to be 0.0804 Gy for vaginal cylinder applicator and 0.1234 Gy for interstitial rigid needles. Standard deviation between the doses for all the measured dwell positions for interstitial rigid needle for 1 cm spaced positions were found to be 0.33 and 0.37 for 2cm spaced dwell positions. For intracavitory vaginal applicator this was found to be 0.21 for 1 cm spaced dwell positions and 0.06 for 2cm spaced dwell positions. Intracavitory test plans reproduced on the 2D array with the same applicator positions shows the ideal dose distribution with the TPS planned. Conclusion: 2D array is a good tool for determining the dwell position of HDR brachytherapy. With the in-house developed program in excel it is easy and accurate. The traditional way with film analysis can be replaced by this method, as the films will be more costly.

60 APPLIED LIFE SCIENCES↗
DOE OSTI2020

Mechanistic basis of oxygen sensitivity in titanium

One of the most potent examples of interstitial solute strengthening in metal alloys is the extreme sensitivity of titanium to small amounts of oxygen. Unfortunately, these small amounts of oxygen also lead to a markedly decreased ductility, which in turn drives the increased cost to purify titanium to avoid this oxygen poisoning effect. Here, we report a systematic study on the oxygen sensitivity of titanium that provides a clear mechanistic view of how oxygen impurities affect the mechanical properties of titanium. The increased slip planarity of Ti-O alloys is caused by an interstitial shuffling mechanism, which is sensitive to temperature, strain rate, and oxygen content and leads to the subsequent alteration of deformation twinning behavior. The insights from our experimental and computational work provide a rationale for the design of titanium alloys with increased tolerance to variations in interstitial content, with notable implications for more widespread use of titanium alloys.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Decoding the interstitial/vacancy nature of dislocation loops with their morphological fingerprints in face-centered cubic structure

Dislocation loops are critical defects inducing detrimental effects like embrittlement and swelling in materials under irradiation. Distinguishing their nature (interstitial- or vacancy-type) is a long-standing challenge with great implications for understanding radiation damage. Here, we demonstrate that the morphology of radiation-induced Frank loops can unveil their nature in face-centered cubic (fcc) structure: Circular loops are interstitial-type in all fcc materials, while segmented loops are vacancy-type in high stacking fault energy (SFE) alloys but varied-type in low SFE and high-entropy alloys. The polygonal shape is attributed to the dissociation of an a 0 /3<111> dislocation into an a 0 /6<112> Shockley partial and an a 0 /6<110> stair-rod dislocation. The dissociation of vacancy loops is energetically favorable, whereas interstitial loops require external stimuli to promote dislocation propagation. This “morphology-nature” correlation not only highlights the asymmetry of vacancy/interstitial loops but also offers an efficient way to distinguish loop nature for a wide range of materials.

Ma, Kan [City Univ. of Hong Kong, Kowloon (Hong Ko↗
DOE OSTI2015

Characterization of swift heavy ion irradiation damage in ceria

We have examined microstructural evolution in irradiated ceria (CeO2) using swift heavy ion irradiation, electron microscopy, and atomistic simulation. CeO2, a UO2 fuel surrogate, was irradiated with gold ions at an energy of 1 GeV to fluences up to 1x1014 ions/cm2. Transmission electron microscopy accompanied by electron energy loss spectroscopy showed that the ion tracks were of similar size at all fluences, and that there was no chemical change in the ion track core. Classical molecular dynamics simulations of thermal spikes in CeO2 with energy deposition of 12 and 36 keV/nm show damage consisting of isolated point defects at the lower energy and defect clusters at 36 keV/nm, with no amorphization at either energy. Inferences are drawn from modeling about density changes in the ion track and the formation of interstitial loops that shed light on features observed by electron microscopy of swift heavy ion irradiated ceria.

Yablinsky, Clarissa↗
DOE OSTI2022

Investigating the Anomalous Frequency Variations Near $T_c$ of Nb SRF Cavities

We report recent studies on the anomalous frequency variations of 1.3 GHz Nb SRF cavities near the transition temperature Tc and use them to investigate the underlying physics of state-of-the-art surface treatments. One such feature, a dip in frequency, correlates directly with the quality factor at 16 MV/m and the anti-Q slope that arise in cavities with dilute concentrations of N interstitial in the RF layer achieved via N-doping and mid temperature baking. For N interstitial, we find that the dip magnitude and Tc follow exponential relationships with the electronic mean free path. We present the first observation of the frequency dip near Tc in a cavity baked at 200 C in-situ for 11 hours, which is concurrent with the anti-Q slope, and may be driven by oxygen diffused from the native oxide, thus suggesting the possibility of ‘‘O-doping.’’ We also investigate the conductivities of two cavities that display different resonant frequency behaviors near Tc and suggest that the anti-Q slope and frequency dip phenomena may occur in the presence of interstitial N or possibly O that inhibit the formation of proximity coupled Nb nano-hydrides.

43 PARTICLE ACCELERATORS↗
DOE OSTI2012

Progress report on the incorporation of lower lengthscales into polycrystal plasticity models - Part 2

Creep is the time-dependent, irreversible deformation that occurs at a low rate, at stresses below the ultimate stress of the material. Non-hydrostatic stresses (i.e. shear stresses) are required for creep. The kinds of creep relevant in cladding materials are (1) thermal creep, and (2) irradiation creep. These deformation processes require elevated temperatures, and applied stresses. Both processes are mediated by the motion of dislocations. Dislocations preferentially absorb either vacancies or interstitials, causing them to climb over obstacles. In thermal creep, the higher temperature causes high mobility of point defects, leading to a significant absorption rate of point defects by dislocations, leading to dislocation motion. In irradiation creep, the high radiation flux causes a supersaturation of point defects, that in turn leads to point defect absorption, and consequently dislocation motion. Irradiation growth is defined as the irradiation induced dimensional changes that take place in the absence of applied stresses, and is caused by the partitioning of vacancies and interstitials among two or more kinds of sinks. Each kind of sink produces strain in a different crystallographic direction, such that the final deformation is anisotropic, and is volume conserved. In this phenomenon, the high radiation flux causes the supersaturation of point defects. These point defects then tend to aggregate into dislocation loops (either interstitial of vacancy). These loops then absorb more point defects, thereby growing in size, and leading to macroscopic strain. The two phenomena of creep and growth become coupled in polycrystalline materials. Growth in a single grain is opposed by stresses caused by interaction of the growing grain with its neighbors (that are also growing, but it in different directions). These stresses initiate and/or potentiate irradiation creep. In extreme cases, such as accident scenarios, thermal creep becomes important. Internal stresses in turn affect the diffusive characteristics of point defects within a grain, and consequently affecting the phenomenon of growth. In this report, we examine the coupling between creep and growth in a polycrystalline materials, and also look at the atomistic mechanisms that contribute to these phenomena.

36 MATERIALS SCIENCE↗
DOE OSTI2013

Fundamental Understanding of Ambient and High-Temperature Plasticity Phenomena in Structural Materials in Advanced Reactors

The goal of this research project is to develop the methods and tools necessary to link unit processes analyzed using atomistic simulations involving interaction of vacancies and interstitials with dislocations, as well as dislocation mediation at sessile junctions and interfaces as affected by radiation, with cooperative influence on higher-length scale behavior of polycrystals. These tools and methods are necessary to design and enhance radiation-induced damage-tolerant alloys. The project will achieve this goal by applying atomistic simulations to characterize unit processes of: 1. Dislocation nucleation, absorption, and desorption at interfaces 2. Vacancy production, radiation-induced segregation of substitutional Cr at defect clusters (point defect sinks) in BCC Fe-Cr ferritic/martensitic steels 3. Investigation of interaction of interstitials and vacancies with impurities (V, Nb, Ta, Mo, W, Al, Si, P, S) 4. Time evolution of swelling (cluster growth) phenomena of irradiated materials 5. Energetics and kinetics of dislocation bypass of defects formed by interstitial clustering and formation of prismatic loops, informing statistical models of continuum character with regard to processes of dislocation glide, vacancy agglomeration and swelling, climb and cross slip This project will consider the Fe, Fe-C, and Fe-Cr ferritic/martensitic material system, accounting for magnetism by choosing appropriate interatomic potentials and validating with first principles calculations. For these alloys, the rate of swelling and creep enhancement is considerably lower than that of face-centered cubic (FCC) alloys and of austenitic Fe-Cr-Mo alloys. The team will confirm mechanisms, validate simulations at various time and length scales, and improve the veracity of computational models. The proposed research's feasibility is supported by recent modeling of radiation effects in metals and alloys, interfacial dislocation transfer reactions in nano-twinned copper, and dislocation reactions at general boundaries, along with extensive modeling cooperative effects of dislocation interactions and migration in crystals and polycrystals using continuum models.

22 GENERAL STUDIES OF NUCLEAR REACTORS↗
DOE OSTI2015

Understanding the Effect of Na in Improving the Performance of CuInSe 2 Based Photovoltaics

Cu(In,Ga)Se 2 (CIGS) thin film photovoltaic technology is in the early stages of commercialization with an annual manufacturing capacity over 1 GW and has demonstrated the highest module efficiency of any of the thin film technologies. However there still is a lack of fundamental understanding of the relationship between the material properties and solar cell device operation. It is well known that the incorporation of a small amount of Na into the CIGS film during processing is essential for high efficiency devices. However, there are conflicting explanations for how Na behaves at the atomic scale. This report investigates how Na is incorporated into the CIGS device structure and evaluates the diffusion of Na into CIGS grain boundaries (GBs) and bulk crystallites. Participants: This project was carried out at the Institute of Energy Conversion at the University of Delaware, collaborating with the Rockett group at the University of Illinois Urbana-Champagne. Significant Findings: The significant outcomes of this project for each task include; Task 1.0: Effect of Na in Devices Fabricated on PVD Deposited CIGS; Na diffusion occurs through the Mo back contact via GBs driven by the presence of oxygen; Na reversibly compensates donor defects in CIGS GBs,Task 2.0: Na Incorporation in Single Crystal CIGS; and bulk Na diffusion proceeds rapidly such that grains are Na-saturated immediately following CIGS thin film manufacture. Industry Guidance: The presented results offer interesting concepts for modification of manufacturing processes of CIGS-based PV modules. Possible approaches to improve control of Na uptake and uniformly increase levels in CIGS films are highlighted for processes that employ either soda-lime glass or NaF as the Na source. Concepts include the potential of O 2 or oxidative based treatments of Mo back contacts to improve Na diffusion through the metal film and increase Na uptake into the growing CIGS. This project has also offered fundamental understanding of the behavior of Na in CIGS grains and GBs, particularly the confirmation that CIGS grains will be saturated with Na immediately following manufacture Summary of Results: Most commercially available CIGS modules are fabricated on soda-lime glass coated with Mo as the back electric contact, and Na in the glass diffuses through the Mo layer into the CIGS during film growth. In Task 1 the transport of Na through Mo was evaluated using x-ray photoelectron surface spectroscopy along with diffusion modeling to obtain diffusion coefficients at several temperatures. It was determined that Na diffusion in Mo only occurs along GBs and that oxygen provides an additional driving force to enhance Na transport. Device data revealed that older Mo substrates with a greater amount of surface oxide resulted in slightly higher efficiencies due to enhanced Na incorporation caused by the oxide. This finding shows that Mo substrates could potentially undergo an oxidation treatment prior to CIGS deposition to further improve and control the incorporation of Na. To determine if in-grain Na affects device performance, in Task 1 Na was selectively removed from GBs using heat/rinse cycles. Due to the low temperature of this treatment, Na at GBS remained mobile while diffusion within the bulk was too slow for Na removal from the grain interiors. Changes in electrical properties were evaluated using conductivity and Seebeck coefficient measurements, with both decreasing as Na was removed to reach values similar to Na-free controls samples. This can be explained by the compensation of donor defects by Na, causing an increase in the free carrier concentration. Devices showed a decrease in open-circuit voltage after Na removal confirming that the beneficial effects of GB Na. The findings of this project will provide guidance for rational optimization of Na incorporation procedures in the manufacturing of CIGS solar cells. While it is known that Na segregates at CIGS GBs, the nature and role of Na diffusion into grain interiors was less clear. In Task 2, single crystal CuInSe 2 was used as a model system to represent the grain interiors of CIGS. Crystals processed by two different methods of different compositions and dislocation densities, were evaluated. Diffusion coefficients were obtained at two temperatures after Na diffusion, giving near identical values, ~2x10 11 cm 2 /s and ~6x10 11 cm2/s at 420°C and 480°C, respectively, for each crystal. Characterization confirmed that dislocation densities were too low to significantly impact the effective diffusion coefficient. The Cu-poor crystal had a higher solubility suggesting that Na diffusion is mediated by Cu-vacancies, but was not accompanied by an expected increase in diffusion coefficient. The activation energy for diffusion was similar to values expected for interstitial diffusion, but the large size of Na + ions should result in a solubility that is much lower than what was experimentally measured. A hybrid interstitial-substitutional mechanism is proposed that combines the fast diffusion of interstitial atoms with the high solubility common for substitutional impurities. Lattice diffusion of Na proceeds fast enough that CIGS grain interiors will have Na concentrations near the solubility limit of 1018 cm -3 when manufactured under standard conditions. Na and K treated epitaxial CIS films showed a significant increase in cathodoluminescence emission intensity, indicating a reduction of non-radiative recombination pathways, which is consistent with improvements in CIGS device performance, though the mechanism is not clear. Pathways forward: Despite the success of this project, there are a number of questions remaining related to further the understanding of the chemistry of Na in CIGS films and devices. These include further elucidation of the mechanisms of Na passivation in CIGS GBs, with identification of which defects are involved and confirmation of the possible effects of in-grain Na on device performance. To complete analysis of the cell structure, conformation of the presence and possible chemistries of Na at the CIGS/CdS junction and/or in the front transparent contacts, and its effects on device performance, is needed.

14 SOLAR ENERGY↗
DOE OSTI2021

Tritium Diffusion in Fe-Al Aluminide Coating Bulk Phases

The theoretical investigations of interstitial tritium diffusion pathways in various Al-rich (>60% at. Al) iron aluminide coating phases found that in FeNiAl 5 tritium prefers to diffuse in between layers, while in Fe 4 Al 13 , tritium prefers to diffuse across layers. In the case of Fe 2 Al x phases, the simulations show that the variable Al content in the channels affects the diffusion behavior of tritium in the channels. For 100% of vacancy, tritium prefers to diffuse at the center of the channel, while for 0% Al vacancy, tritium prefers to diffuse along the channel’s wall. In the case where 50% Al vacancy are present in the channels, tritium can diffuse in a mixed way, with positions oscillating between the channel’s center and wall. However, the large energy barrier involved in this case suggests that tritium diffusion could be correlated with Al diffusion in the channels. While we found that at 600 K interstitial tritium diffuses faster in Fe 2 Al x phases (D Τ ≤10 -11 m 2 .s -1 ), then in Fe 4 Al 13 (D Τ ≈10 -12 m 2 .s -1 ), and finally in FeNiAl 5 (D Τ ≈10 -13 m 2 .s -1 ), we also find that interstitial tritium generally diffuses faster in Fe-Al coating phases than in γ-LiAlO 2 pellets (D Τ ≈10 -14 m 2 .s -1 ).

36 MATERIALS SCIENCE↗
DOE OSTI2024

The Energetics of He Bubble Nucleation

In this project we considered the initial stages of helium bubble nucleation via the proposed mechanism of self-interstitial atom nucleation. By calculating the energy barrier to self-interstitial atom nucleation in a range of Fe-Ni-Cr alloys we identified the most important energetic contributions to the phenomenon: the Frenkel-pair energy barrier in the absence of helium and the difference of insertion energy for a He cluster into a perfect lattice and vacancy. From this observation, we developed a simple model of helium-assisted self-interstitial atom nucleation.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Thermodynamics of Tritium Trapping by Point Defects in Intermetallic Al 12 (TM) 2.35 Aluminide Coating Phase

Density functional theory simulations have been carried out to investigate the potential for tritium trapping by metal vacancies in intermetallic Al 12 (TM) 2.35 phase (TM = Fe, Cr, and Ni) as function of temperature and tritium partial pressure. It was found that tritium could be favorably trapped by Fe and Ni vacancies and not favorably trapped by Al and Cr vacancies. However, due to the presence of partially occupied Al sites in bulk Al 12 (TM) 2.35 , leading to the approximate number of ~255 Al atoms in the unit cell, 86 sites were found energetically favorable to the creation of an Al vacancy. While adding a tritium atom in an Al vacancy is not energetically favorable, the tritiated defect still has a negative Gibbs free energy because the energy gain for creating an Al vacancy overcome the energy cost of adding the tritium species. Based on the calculated Gibbs free energy, the first tritiation of a metal vacancy, at conditions relevant to in-reactor operations, should be more favorable for Al, followed Fe, Ni, and Cr vacancies. By comparing the behavior of tritium in Al 12 (TM) 2.35 with previously studied Fe-Al coating phases (i.e., FeNiAl 5 , Fe 4 Al 13 , and Fe 2 Al 5.6 ), we found that there is a correlation between interstitial tritium solubility and the potential for vacancy trapping. The current trend suggests that if the insertion of an interstitial tritium cost more than 0.3 eV, then trapping by metal vacancies should be preferred. By combining the simulations results obtained to date, we noticed different trapping mechanisms of tritium in the Al coating. Tritium is mostly trapped by Fe and Ni vacancies in the outer Fe-Al coating phase Al 12 (TM) 2.35 while tritium should be preferentially trapped by Al and Fe vacancies for the inner Fe-Al coating phases (FeNiAl 5 , Fe 4 Al 13 , Fe 2 Al 5.6 ). Altogether, these studies show that tritium interacts differently with the various Fe-Al aluminide phases, they also suggest that tritium trapping and retention could be more efficient if metal defects are present and if the solubility of interstitial tritium in the different phases is low.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Intrinsic Defect-Induced Local Semiconducting-to-Metallic Regions Within Monolayer 1T-TiS2 Displayed by First-Principles Calculations and Scanning Tunneling Microscopy

Using density functional theory (DFT) and scanning tunneling microscopy (STM), the intrinsic point defects, formation energy, and electronic structure of 1T-TiS2 were investigated. Defect systems include single-atom vacancies, interstitial and adatom additions, and direct atomic substitution. Using a collective approach for analyzing realistic systems for point defect investigation, we provide a more straightforward comparison to the experimental measurements, reproducing more realistic environmental conditions related to thin film growth. STM images are compared to computationally simulated electron density images to identify specific geometries that result from favorable point defects. DFT suggests that titanium interstitials are the most energetically favorable intrinsic defect, and sulfur vacancies are more likely to form than titanium vacancies within this realistic analysis, which is in agreement with STM data. A pristine, stoichiometric monolayer system is calculated to have a direct band gap of 0.422 eV, which varies based on local point defects. Local semiconducting-to-metallic electronic transitions are predicted to occur based on the presence of Ti interstitials.

Keeney, P. J.↗
DOE OSTI2013

Atomistic Studies of Cation Transport in Tetragonal ZrO2 During Zirconium Corrosion

Zirconium alloys are the major fuel cladding materials in current reactors. The water-side corrosion is one of the major degradation mechanisms of these alloys. During corrosion the transport of oxidizing species in zirconium dioxide (ZrO2) determines the corrosion kinetics. Previously it has been argued that the outward diffusion of cation ions is important for forming protective oxides. In this work, the migration of Zr defects in tetragonal ZrO2 is studied with temperature accelerated dynamics and molecular dynamics simulations. The results show that Zr interstitials have anisotropic diffusion and migrate preferentially along the [001] or c direction in tetragonal ZrO2. The compressive stresses can increase the Zr interstitial migration barrier significantly. The migration barriers of some defect clusters can be much lower than those of point defects. The migration of Zr interstitials at some special grain boundaries is much slower than in a bulk oxide. The implications of these atomistic simulation results in the Zr corrosion are discussed.

36 MATERIALS SCIENCE↗
DOE OSTI2013

DISPLACEMENT CASCADE SIMULATION IN TUNGSTEN AT 1025 K

Molecular dynamics simulation was employed to investigate the irradiation damage properties of bulk tungsten at 1025 K (0.25 melting temperature). A comprehensive data set of primary cascade damage was generated up to primary knock-on atom (PKA) energies 100 keV. The dependence of the number of surviving Frenkel pairs (NFP) on the PKA energy (E) exhibits three different characteristic domains presumably related to the different cascade morphologies that form. The low-energy regime < 0.2 keV is characterized by a hit-or-miss type of Frenkel pair (FP) production near the displacement threshold energy of 128 eV. The middle regime 0.3 – 30 keV exhibits a sublinear dependence of log(NFP) vs log(E) associated with compact cascade morphology with a slope of 0.73. Above 30 keV, the cascade morphology consists of complex branches or interconnected damage regions. In this extended morphology, large interstitial clusters form from superposition of interstitials from nearby damage regions. Strong clustering above 30 keV results in a superlinear dependence of log(NFP) vs log(E) with a slope of 1.365. At 100 keV, an interstitial cluster of size 92 and a vacancy cluster of size 114 were observed.

cascade↗
DOE OSTI2015

DISPLACEMENT CASCADE SIMULATION IN TUNGSTEN UP TO 200 KEV OF DAMAGE ENERGY AT 300, 1025, AND 2050 K

We generated molecular dynamics database of primary defects that adequately covers the range of tungsten recoil energy imparted by 14-MeV neutrons. During this semi annual period, cascades at 150 and 200 keV at 300 and 1025 K were simulated. Overall, we included damage energy up to 200 keV at 300 and 1025 K, and up to 100 keV at 2050 K. We report the number of surviving Frenkel pairs (NF) and the size distribution of defect clusters. The slope of the NF curve versus cascade damage energy (EMD), on a log-log scale, changes at a transition energy (μ). For EMD > μ, the cascade forms interconnected damage regions that facilitate the formation of large clusters of defects. At 300 K and EMD = 200 keV, the largest size of interstitial cluster and vacancy cluster is 266 and 335, respectively. Similarly, at 1025 K and EMD = 200 keV, the largest size of interstitial cluster and vacancy cluster is 296 and 338, respectively. At 2050 K, large interstitial clusters also routinely form, but practically no large vacancy clusters do

Setyawan, Wahyu↗
DOE OSTI2026

Understanding the Role of Extrinsic Impurities in Bulk Nb SRF Cavities

High gradient and high quality factor superconducting radiofrequency (SRF) cavities are essential for efficient particle acceleration in next-generation accelerators. This work demonstrates that the superconducting performance of bulk niobium can be enhanced through a controlled introduction of interstitial oxygen and nitrogen. Thermal and chemical surface treatments modify the concentration and distribution of these impurities, enabling systematic tuning of SRF cavity performance. By combining cavity RF measurements with quantitative materials characterizations, we isolate the impact of impurity concentration on BCS surface resistance and identify the mechanisms by which interstitial impurities alter the superconducting properties of niobium. We find that nitrogen is an order of magnitude more effective than oxygen in reducing BCS resistance at 16 MV/m and that the reduction arises from a combination of mean free path optimization and superconducting gap enhancement. Using these insights, we develop a predictive model that estimates cavity performance directly from room temperature sample material studies, reducing the reliance on full-scale cryogenic tests for surface treatment development. We then apply this model to explore co-doping strategies, demonstrating that combining interstitial oxygen and nitrogen achieves a synergistic reduction in BCS resistance. These results establish co-doping as a viable path for the development of surface-engineered niobium for future high quality factor SRF applications.

Hu, Hannah [Chicago U.]↗
DOE OSTI2026

Transition-state lattice modes and the breakdown of adiabatic tunneling for hydrogen and deuterium in bcc Nb

Interstitial hydrogen and deuterium in body-centered-cubic metals constitute archetypal quantum tunneling systems. Their relevance has been renewed by the connection between hydrogenic tunneling in Nb and defect-induced decoherence in superconducting qubits, motivating a predictive microscopic theory. Existing theoretical treatments invoke an adiabatic separation between the light interstitial and the host lattice, an assumption whose validity has not been rigorously established for hydrogenic species. Here, we show that the experimentally measured tunnel splittings of O-trapped H and D in bcc Nb are quantitatively reproduced only within a five-dimensional (5D) Lattice-Renormalized Born-Oppenheimer (LRBO) framework. This approach treats three interstitial modes and two judiciously selected lattice modes, which includes a transition-state mode, on equal quantum footing. By recasting nested Born-Oppenheimer hierarchies within this same formalism and benchmarking against modern \textit{ab initio} potential energy surfaces, we show that adiabatic separation of the light particle from lattice dynamics is satisfied only in the positive-muon ($μ^{+}$) mass limit. In contrast, tunneling for H and D is fundamentally a collective, nonadiabatic process mediated by anharmonic lattice couplings. Finally, we show that the breakdown of adiabaticity can be anticipated from simple energy estimates involving the ground-state light-particle energy evaluated at a small number of fixed lattice configurations, providing a practical criterion for assessing the validity of adiabatic tunneling theories in other systems.

Pritchard, P. Graham [Northwestern U.]↗
DOE OSTI2011

Synthesis Crystal Structure and Magnetism of beta-Fe1.00(2)Se1.00(3) Single Crystals

Understanding iron-based superconductors requires high-quality impurity-free single crystals. So far they have been elusive for {beta}-FeSe and extraction of intrinsic materials properties has been compromised by several magnetic-impurity phases. Here, we report synchrotron-clean {beta}-FeSe superconducting single crystals grown via LiCl/CsCl flux method. Phase purity yields evidence for a defect-induced weak ferromagnetism that coexists with superconductivity below T{sub c}. In contrast to Fe{sub 1+y}Te-based superconductors, our results reveal that the interstitial Fe(2) site is not occupied and that all contribution to density of states at the Fermi level must come from in-plane Fe(1).

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗