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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 505 records · Page 28
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

Pulsed laser induced atomic layer etching of silicon

Here, we demonstrate the laser mediated atomic layer etching (ALEt) of silicon. Using a nanosecond pulsed 266 nm laser focused loosely over and in a parallel configuration to the surface of the silicon, we dissociate Cl 2 gas to induce chlorination. Then, we use pulsed picosecond irradiation to remove the chlorinated layer. Subsequently, we perform continuous wave (CW) laser annealing to eliminate amorphization caused by the picosecond laser etching. Based on atomic force microscopy (AFM) and X-ray photoelectron spectroscopy (XPS), we observed strong evidence of chlorination and digital etching at 0.85 nm etching per cycle with good uniformity.

42 ENGINEERING↗
DOE OSTI2022

Improving OFDR Distributed Fiber Sensing by Fibers With Enhanced Rayleigh Backscattering and Image Processing

This article investigates using optical fibers with enhanced backscattering profiles to improve distributed fiber sensor performance and reduce instrumentation costs. Using a femtosecond (fs) laser direct writing technique, the Rayleigh backscattering profile of a standard telecom fiber was enhanced by more than 40 dB to improve the signal-to-noise ratio (SNR) for optical frequency domain reflectometry (OFDR). The enhanced backscattering signals enable effectively distributed strain measurements using a low-cost tunable laser (TL). Median filtering is applied to denoise cross correlation results to further improve measurement outcomes. Results presented in this article show that a TL with a 1-nm tuning range, which is far less than the tuning range used in commercial OFDR interrogators, can perform effectively distributed strain measurements using sensing fibers with enhanced backscattering profiles. The sensing fiber with over 40-dB backscattering enhancement achieved 4.8-cm spatial resolution in strain measurements with a root mean square accuracy of less than 2.70 με when 10–50 με were exerted to the sensing fiber. In conclusion, results presented in this article reveal both the potential and limitations of sensing fibers with enhanced backscattering for OFDR-based distributed fiber sensors.

42 ENGINEERING↗
DOE OSTI2021

Tuning magnetic and optical properties through strain in epitaxial LaCrO 3 thin films

We report on the effect of epitaxial strain on magnetic and optical properties of perovskite LaCrO 3 (LCO) single crystal thin films. Epitaxial LCO thin films are grown by pulsed laser deposition on proper choice of substrates to impose different strain states. A combined experimental and theoretical approach is used to demonstrate the direct correlation between lattice-strain and functional properties. The magnetization results show that the lattice anisotropy plays a critical role in controlling the magnetic behavior of LCO films. The strain induced tetragonality in the film lattice strongly affects the optical transitions and charge transfer gap in LCO. This study opens possibilities to tailor the functional properties of LCO and related materials by strain engineering in epitaxial growth.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Engineering an effective three-spin Hamiltonian in trapped-ion systems for applications in quantum simulation

Trapped-ion quantum simulators, in analog and digital modes, are considered a primary candidate to achieve quantum advantage in quantum simulation and quantum computation. The underlying controlled ion–laser interactions induce all-to-all two-spin interactions via the collective modes of motion through Cirac–Zoller or Mølmer–Sørensen schemes, leading to effective two-spin Hamiltonians, as well as two-qubit entangling gates. In this work, the Mølmer–Sørensen scheme is extended to induce three-spin interactions via tailored first- and second-order spin–motion couplings. The scheme enables engineering single-, two-, and three-spin interactions, and can be tuned via an enhanced protocol to simulate purely three-spin dynamics. Analytical results for the effective evolution are presented, along with detailed numerical simulations of the full dynamics to support the accuracy and feasibility of the proposed scheme for near-term applications. With a focus on quantum simulation, the advantage of a direct analog implementation of three-spin dynamics is demonstrated via the example of matter-gauge interactions in the U(1) lattice gauge theory within the quantum link model. The mapping of degrees of freedom and strategies for scaling the three-spin scheme to larger systems, are detailed, along with a discussion of the expected outcome of the simulation of the quantum link model given realistic fidelities in the upcoming experiments. The applications of the three-spin scheme go beyond the lattice gauge theory example studied here and include studies of static and dynamical phase diagrams of strongly interacting condensed-matter systems modeled by two- and three-spin Hamiltonians.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2021

Reduced bandwidth Compton photons from a laser-plasma accelerator using tailored plasma channels

It has been demonstrated experimentally that laser plasma accelerators can produce multi-100 MeV electron bunches with a few percent energy spread, and from these electrons, multi-MeV quasi-monoenergetic photons have been demonstrated based on Compton up-scattering from a counter-propagating laser. This offers the potential of a high-quality, narrow-bandwidth, compact, photon source with broad application. The bandwidth of the resulting photons depends directly on the distribution of the electron bunch and is limited, in particular, by the bunch divergence (i.e., the spread in transverse velocity angle). At the same time, the ability to decelerate electrons after scattering is important to source deployment. We describe a series of plasma structures that expand and then collimate the electron bunch, reducing its divergence and thus reducing the bandwidth of the scattered photons while enabling both high performance scattering and deceleration. Furthermore, these plasma structures are demonstrated in simulations of the accelerator system, showing the potential to reach few-percent photon spread which is important for applications using nuclear resonance fluorescence.

42 ENGINEERING↗
DOE OSTI2020

Additively manufactured heat exchangers: a review on opportunities and challenges

Heat Exchangers (HXs) are crucial engineering components for thermal management. The broad range of applications and the current limits of traditional manufacturing techniques has directed designers and researchers to utilize additive manufacturing (AM) technologies to open a new chapter in HXs design and development. AM has created a world of opportunity to redesign HXs in pioneering forms, shapes, and sizes. In other words, AM technologies provides significant opportunities to increase surface area to volume ratio in heat transfer devices. On the other hand, there are certain challenges to overcome in order to fully grasp the benefits of AM technologies. This thorough review study is different from other published review as it intends to highlight the challenges and opportunities in design and manufacturing of HXs. In addition, part of this study is dedicated to investigate the experimental characterization of additively manufactured HXs. Furthermore, the significant details associated with experimental characterization are normally overlooked in review studies.

42 ENGINEERING↗
DOE OSTI2024

L-PBF High-Throughput Data Pipeline Approach for Multi-modal Integration

Abstract Metal-based additive manufacturing requires active monitoring solutions for assessing part quality. Multiple sensors and data streams, however, generate large heterogeneous data sets that are impractical for manual assessment and characterization. In this work, an automated pipeline is developed that enables feature extraction from high-speed camera video and multi-modal data analysis. The framework removes the need for manual assessment through the utilization of deep learning techniques and training models in a weakly supervised paradigm. We demonstrate this pipeline’s capability over 700,000 high-speed camera frames. The pipeline successfully extracts melt pool and spatter geometries and links them to corresponding pyrometry, radiography, and processparameter information. 715 individual prints are examined to reveal melt pool areas that exceeds 0.07 mm 2 and pyrometry signal over a threshold (375 pyrometry units) were more likely to have defects. These automated processes enable massive throughput of characterization techniques.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Sub-diffractional cavity modes of terahertz hyperbolic phonon polaritons in tin oxide

Abstract Hyperbolic phonon polaritons have recently attracted considerable attention in nanophotonics mostly due to their intrinsic strong electromagnetic field confinement, ultraslow polariton group velocities, and long lifetimes. Here we introduce tin oxide (SnO 2 ) nanobelts as a photonic platform for the transport of surface and volume phonon polaritons in the mid- to far-infrared frequency range. This report brings a comprehensive description of the polaritonic properties of SnO 2 as a nanometer-sized dielectric and also as an engineered material in the form of a waveguide. By combining accelerator-based IR-THz sources (synchrotron and free-electron laser) with s-SNOM, we employed nanoscale far-infrared hyper-spectral-imaging to uncover a Fabry–Perot cavity mechanism in SnO 2 nanobelts via direct detection of phonon-polariton standing waves. Our experimental findings are accurately supported by notable convergence between theory and numerical simulations. Thus, the SnO 2 is confirmed as a natural hyperbolic material with unique photonic properties essential for future applications involving subdiffractional light traffic and detection in the far-infrared range.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2022

Properties and device performance of BN thin films grown on GaN by pulsed laser deposition

Wide and ultrawide-bandgap semiconductors lie at the heart of next-generation high-power, high-frequency electronics. Here, in this paper, we report the growth of ultrawide-bandgap boron nitride (BN) thin films on wide-bandgap gallium nitride (GaN) by pulsed laser deposition. Comprehensive spectroscopic (core level and valence band x-ray photoelectron spectroscopy, Fourier-transform infrared spectroscopy, and Raman) and microscopic (atomic force microscopy and scanning transmission electron microscopy) characterizations confirm the growth of BN thin films on GaN. Optically, we observed that the BN/GaN heterostructure is second-harmonic generation active. Moreover, we fabricated the BN/GaN heterostructure-based Schottky diode that demonstrates rectifying characteristics, lower turn-on voltage, and an improved breakdown capability (~234 V) as compared to GaN (~168 V), owing to the higher breakdown electrical field of BN. Our approach is an early step toward bridging the gap between wide and ultrawide-bandgap materials for potential optoelectronics as well as next-generation high-power electronics.

42 ENGINEERING↗
DOE OSTI2023

Design of InGaN-ZnSnGa 2 N 4 quantum wells for high-efficiency amber light emitting diodes

A novel type-II InGaN-ZnSnGa 2 N 4 quantum well (QW) structure is proposed based on recent experimental achievements for the successful epitaxy of ZnSnN 2 -GaN alloys and the determination of their band offsets with GaN. The simulation results indicate that this structure is promising as the active region for high-efficiency InGaN-based amber (λ ~ 590 nm) light-emitting diodes (LEDs). The hole wavefunction in the valence band is better confined with the insertion of a monolayer scale of ZnSnGa 2 N 4 into the InGaN QW while the electron wavefunction in the conduction band is better confined with the incorporation of an AlGaN layer in the GaN quantum barrier. The band structure of the InGaN-ZnSnGa 2 N 4 QW is numerically simulated based on the experimentally measured band offsets between ZnSnGa 2 N 4 and GaN. With the InGaN-ZnSnGa 2 N 4 QW design, a low In content (20%) is required in the InGaN layer to reach a peak emission wavelength of ~590 nm, yet an In composition of 25% is needed to reach the same emission wavelength for a conventional InGaN QW with the same layer thicknesses. Moreover, the electron-hole wavefunction overlap (Гe1-hh1) for the InGaN-ZnSnGa 2 N 4 QW design reaches 18% for an emission wavelength at ~590 nm. This result is much improved over the conventional InGaN QW overlap of 5% emitting at the same wavelength. The increase in electron-hole wavefunction overlap results in an approximately 14 times enhancement in the predicted spontaneous emission radiative recombination rate of the InGaN-ZnSnGa 2 N 4 QW as compared to that of the conventional InGaN QW. This InGaN-ZnSnGa 2 N 4 QW structure design can be promising to pave a new way to achieve high efficiency amber LEDs.

42 ENGINEERING↗
DOE OSTI2023

An operando synchrotron study on the effect of wire melting state on solidification microstructures of Inconel 718 in wire-laser directed energy deposition

Directed energy deposition (DED) with a coaxial wire-laser configuration has gained significant attention in recent years for the production of large-scale metallic components because of its low directional dependence, fast deposition rate, high feedstock efficiency, and low manufacturing costs. This work studies the coaxial wire-laser DED process of Inconel 718 alloy under a stable deposition condition with a relatively low input volumetric energy density (55.5J/mm 3 ). Post characterization reveals a cluster of refined grains at the center-bottom region of the as-printed track. Operando high-energy synchrotron X-ray experiments and multi-physics modeling are applied innovatively to study the fundamental mechanism responsible for the formation of this microstructure. The X-ray diffraction experiment provides direct evidence, which is supported by the simulation, that the feeding wire can reach the melt pool bottom and release solid particles (primarily carbides) near the mushy zone owing to insufficient melting. Consequently, these sub-micron sized particles suppress the growth of large columnar grains and cause the formation of unique microstructural heterogeneity. In conclusion, this discovery offers new opportunities for tailoring the solidification microstructure by controlling the melting state of the feedstock wire in DED process, in addition to commonly known factors such as the thermal gradient and solidification velocity.

42 ENGINEERING↗
DOE OSTI2025

Calibration and characterization of the line-VISAR diagnostic at the HED-HIBEF instrument at the European XFEL

In dynamic-compression experiments, the line-imaging Velocity Interferometer System for Any Reflector (VISAR) is a well-established diagnostic used to probe the velocity history, including wave profiles derived from dynamically compressed interfaces and wavefronts, depending on material optical properties. Knowledge of the velocity history allows for the determination of the pressure achieved during compression. Such a VISAR analysis is often based on Fourier transform techniques and assumes that the recorded interferograms are free from image distortions. In this paper, we describe the VISAR diagnostic installed at the HED-HIBEF instrument located at the European XFEL along with its calibration and characterization. It comprises a two-color (532, 1064 nm), three-arm (with three velocity sensitivities) line imaging system. We provide a procedure to correct VISAR images for geometric distortions and evaluate the performance of the system using Fourier analysis. We finally discuss the spatial and temporal calibrations of the diagnostic. As an example, we compare the pressure extracted from the VISAR analysis of shock-compressed polyimide and silicon.

47 OTHER INSTRUMENTATION↗
DOE OSTI2021

Laser-based Adhesion Strength Measurements for Advanced Manufactured Sensor Adhesion Characterization

As part of the advanced manufacturing (AM) focus of the Nuclear Energy Enabling Technologies (NEET) Advanced Sensors and Instrumentation (ASI) Program, new in-house capabilities to fabricate and test novel active and passive in-pile sensors are being developed at the Idaho National Laboratory (INL). These advanced-manufactured sensors, such as peak temperature monitors and strain gauges, must be miniaturized and be able to provide real-time feedback, all while withstanding the coupled extremes of temperature and radiation typically observed in the environment of a nuclear test reactor. Fabricating durable and robust in-pile sensors with high fidelity requires a fundamental understanding of the optimal process parameters required in the AM technique, as well as the effect of deviations from optimal process parameters on the sensor-substrate adhesion and the ultimate robustness of the sensor. This report presents the use of a laser-based, non-contact approach for characterizing the adhesion of sensors manufactured using aerosol jet printing (AJP) that comprise of silver nanoparticle inks deposited and sintered on austenitic stainless steel (SS) 316L substrates. The effect of substrate surface roughness, surface energy, ink sintering time and sintering temperature on the printed sensor topography and the sensor-substrate adhesion has been systematically investigated. The sensor-substrate interfacial adhesion strength was determined from the critical laser pulse energy required to ablate/ detach the printed sensor from the substrate. Measurements of the sensor topography using optical profilometry revealed that post-deposition sintering at 400°C for 60 minutes resulted in a reduced sensor thickness, while plasma treating the substrate prior to printing yielded sensors with uniform thickness profiles transverse to the print direction. Sintering temperature and time were found to be the dominant parameters that affected sensor-substrate adhesion, followed by substrate surface roughness. The laser-based and locally-destructive approach for adhesion strength measurements shows promise in overcoming the challenges and limitations of current standardized peel tests and can be developed into a post-fabrication process control protocol for evaluating the durability of AM printed sensors in a high throughput fashion. Future studies will investigate the use of laser-induced spallation techniques as well as non-destructive laser ultrasonic methods for sensor-substrate adhesion characterization on sensors manufactured using AJP and other AM techniques such as plasma jet printing (PJP).

42 ENGINEERING↗
DOE OSTI2023

Tunable and efficient ultraviolet generation with periodically poled lithium niobate

On-chip ultraviolet (UV) sources are of great interest for building compact and scalable atomic clocks, quantum computers, and spectrometers. However, few material platforms are suitable for integrated UV light generation and manipulation. Of these materials, thin-film lithium niobate offers unique advantages such as sub-micron modal confinement, strong nonlinearity, and quasi-phase matching. Despite these characteristics, its utilization in the UV has remained elusive because of the substantial sensitivity of standard quasi-phase matching to fabrication imperfections, the photorefractive effect, and relatively large losses in this range. Here, we present efficient (197 ± 5%/W/cm 2 ) second harmonic generation of UV-A light in a periodically poled lithium niobate nanophotonic waveguide. We achieve on-chip UV powers of ~30 µW and linear wavelength tunability using temperature. These results are enabled with large cross section waveguides, which leads to first-order UV quasi-phase-matching with relatively long poling periods (>1.5 µm). By varying the poling period, we have achieved the shortest reported wavelength (355 nm) generated through frequency doubling in thin-film lithium niobate. Furthermore, our results open up new avenues for UV on-chip sources and chip-scale photonics through compact frequency-doubling of common near-IR laser diodes.

42 ENGINEERING↗