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At least 505 records · Page 28

Tip-based proximity ferroelectric switching and piezoelectric response in wurtzite multilayers

Proximity ferroelectricity is a paradigm for inducing ferroelectricity when a nonferroelectric polar material (such as Al⁢ N), which is unswitchable with an external field below the dielectric breakdown field, becomes a practically switchable ferroelectric in direct contact with a thin switchable ferroelectric layer (such as Al 1−𝑥 ⁢Sc 𝑥 ⁢N). Here, we develop a Landau-Ginzburg-Devonshire approach to study the proximity effect of local piezoelectric response and polarization reversal in wurtzite ferroelectric multilayers under a sharp electrically biased tip. Using finite-element modeling, we analyze the probe-induced nucleation of nanodomains, the features of local polarization hysteresis loops and coercive fields in the Al 1−𝑥 ⁢Sc 𝑥 ⁢N/Al⁢ N bilayers and three-layers. Similar to the wurtzite multilayers sandwiched between two parallel electrodes, the regimes of “proximity switching” (when all layers collectively switch) and the regime of “proximity suppression” (when they collectively do not switch) are the only two possible regimes in the probe-electrode geometry. However, the parameters and asymmetry of the local piezoresponse and polarization hysteresis loops depend significantly on the sequence of the layers with respect to the probe. The physical mechanism of proximity ferroelectricity in the local probe geometry is a depolarizing electric field determined by the polarization of the layers and their relative thickness. The field, whose direction is opposite to the polarization vector in the layer(s) with the larger spontaneous polarization (such as Al⁢ N), renormalizes the double-well ferroelectric potential to lower the steepness of the switching barrier in the “otherwise unswitchable” polar layers. Tip-based control of domains in otherwise nonferroelectric layers using proximity ferroelectricity can provide nanoscale control of domain reversal in memory, actuation, sensing, and optical applications. The ability of the tip-induced proximity switching to differentially switch multilayers, based on the order of the layers, provides a powerful tool for selective domain engineering.

36 MATERIALS SCIENCE↗

Electric Drive Technologies Consortium (EDTC)/ Cost competitive, high-Performance, highly Reliable (CPR) Power Devices on 4H-SiC (Final Report)

4H-Silicon carbide (4H-SiC) is a wide bandgap semiconductor that offers superior material properties over silicon, including higher critical electric field, thermal conductivity, and electron saturation velocity. These advantages make 4H-SiC highly attractive for high-voltage, high-efficiency power electronics. However, realizing the full potential of SiC requires device technologies that are not only high-performing but also manufacturable and reliable under real-world operating conditions. This report summarizes the outcomes of a five-year R&D effort funded by the U.S. Department of Energy (DOE) under the Electric Drive Technologies Consortium (EDTC), focused on developing cost-competitive, high-performance, and highly reliable (CPR) power devices on 4H-SiC substrates. The program targeted scalable and manufacturable 1.2 kV-class SiC MOSFETs optimized for next-generation electric vehicles, renewable energy systems, and industrial power conversion. The project delivered transformative advancements in SiC power device performance and ruggedness. Particularly, Specific on-resistance (R on,sp ) was reduced by up to 37%, from ~4.0 m$\Omega \cdot$cm 2 in earlier designs to an industry-leading 2.40 m$\Omega \cdot$cm 2 , driven by optimized doping, refined JFET widths, and layout engineering. Breakdown voltages (BV) exceeded 1600 V, marking improvement over legacy baselines, and demonstrating the robustness of newly implemented junction profiles and edge terminations. Short-circuit withstand time (SCWT) saw a remarkable 4$\times$ increase, from ~2 $\mu$s to over 8 $\mu$s, achieved through the successful deployment of deep P-well structures (~1.8–2.0 $\mu$m) via channeling implantation. This innovative process breakthrough enabled precise junction formation without MeV-class implantation tools, reduced leakage under high field stress, and allowed even the shortest-channel devices (down to 0.3 $\mu$m) to achieve both high BV and excellent ruggedness—breaking the traditional trade-off between conduction efficiency and blocking capability. Several novel architectures pushed the performance envelope further. JBSFETs—featuring embedded Schottky portions—eliminated bipolar degradation and drastically reduced third-quadrant leakage, while Ladder MOSFETs introduced a clever orthogonal conduction path that achieved a 15.4% reduction in R on,sp over standard linear designs. Switching performance reached new benchmarks: short-channel devices showed a 31% reduction in total switching energy compared to 0.5 $\mu$m counterparts, while maintaining manageable gate drive requirements. Layout-optimized structures not only improved transconductance but also accelerated switching transitions, pointing to real-world benefits in converter-level efficiency. The devices also passed rigorous reliability validation. Stress-tested across TDDB, HTGB, HTRB, HVP, and burn-in, the devices screened under 30 V/10 hr and 43 V/1 s protocols consistently exhibited tighter lifetime distributions and long-term oxide robustness. These screening techniques proved effective in identifying latent defects and ensuring deployment-grade reliability. Meanwhile, advanced 3D TCAD simulations revealed and resolved electric field hotspots—particularly in HEXFET corners—where fields exceeding 4.8 MV/cm were mitigated through geometry-aware layout corrections. Overall, the results of this project demonstrate a manufacturable and scalable SiC power device platform that addresses key DOE performance targets for efficient, robust, and reliable 1.2kV 4H-SiC Power Devices. The developed technologies represent a meaningful step forward in the commercial readiness of high-voltage SiC solutions and provide a strong foundation for continued advancement in wide bandgap power electronics.

42 ENGINEERING↗

Development and fabrication of improved power transistor switches

A new class of high-voltage power transistors has been achieved by adapting present interdigitated thyristor processing techniques to the fabrication of NPN Si transistors. Present devices are 2.3 cm in diameter. The electrical performance obtained is consistent with the predictions of an optimum design theory specifically developed for power switching transistors. The forward safe operating area of the experimental transistors shows a significant improvement over commercially available devices. The report describes device design, wafer processing, and various measurements which include dc characteristics, forward and reverse second breakdown limits, and switching times.

Hower, P. L.↗

Internal breakdown of charged spacecraft dielectrics

It is suggested that small energy discharges of low differential voltage that are associated with internal buried charge may be an important mechanism by which sorted electrostatic energy is released from dielectrics on board orbiting spacecraft. The evidence from space given by Stevens (1980) is noted, and the laboratory experimental evidence of Frederickson is cited to demonstrate that discharges occur under circumstances with no external potential drop. Previous calculations indicating that significant internal electric fields can exist in dielectrics charged with multiple-kilovolt electron beams under conditions involving little or no external potential drop are reviewed. Attention is given to the internal discharge mechanism of Meulenberg (1976), and new calculations suggesting that the space environment is conducive to the formation of the conditions required by this mechanism are presented. Experimental procedures for checking the suggestions made are developed.

Beers, B. L.↗

Multilaminate Energy Storage Films from Entropy‐Driven Self‐Assembled Supramolecular Nanocomposites

Abstract Composite materials comprising polymers and inorganic nanoparticles (NPs) are promising for energy storage applications, though challenges in controlling NP dispersion often result in performance bottlenecks. Realizing nanocomposites with controlled NP locations and distributions within polymer microdomains is highly desirable for improving energy storage capabilities but is a persistent challenge, impeding the in‐depth understanding of the structure–performance relationship. In this study, a facile entropy‐driven self‐assembly approach is employed to fabricate block copolymer‐based supramolecular nanocomposite films with highly ordered lamellar structures, which are then used in electrostatic film capacitors. The oriented interfacial barriers and well‐distributed inorganic NPs within the self‐assembled multilaminate nanocomposites effectively suppress leakage current and mitigate the risk of breakdown, showing superior dielectric strength compared to their disordered counterparts. Consequently, the lamellar nanocomposite films with optimized composition exhibit high energy efficiency (>90% at 650 MV m −1 ), along with remarkable energy density and power density. Moreover, finite element simulations and statistical modeling have provided theoretical insights into the impact of the lamellar structure on electrical conduction, electric field distribution, and electrical tree propagation. This work marks a significant advancement in the design of organic–inorganic hybrids for energy storage, establishing a well‐defined correlation between microstructure and performance.

Li, He↗

Ultra High Voltage Propellant Isolators and Insulators for JIMO Ion Thrusters

Within NASA's Project Prometheus, high specific impulse ion thrusters for electric propulsion of spacecraft for the proposed Jupiter Icy Moon Orbiter (JIMO) mission to three of Jupiter's moons: Callisto, Ganymede and Europa will require high voltage operation to meet mission propulsion. The anticipated approx.6,500 volt net ion energy will require electrical insulation and propellant isolation which must exceed that used successfully by the NASA Solar Electric Propulsion Technology Readiness (NSTAR) Deep Space 1 mission thruster by a factor of approx.6. Xenon propellant isolator prototypes that operate at near one atmosphere and prototypes that operate at low pressures (<100 Torr) have been designed and are being tested for suitability to the JIMO mission requirements. Propellant isolators must be durable to Paschen breakdown, sputter contamination, high temperature, and high voltage while operating for factors longer duration than for the Deep Space 1 Mission. Insulators used to mount the thrusters as well as those needed to support the ion optics have also been designed and are under evaluation. Isolator and insulator concepts, design issues, design guidelines, fabrication considerations and performance issues are presented. The objective of the investigation was to identify candidate isolators and insulators that are sufficiently robust to perform durably and reliably during the proposed JIMO mission.

Banks, Bruce A.↗

Update on Development of SiC Multi-Chip Power Modules

Progress has been made in a continuing effort to develop multi-chip power modules (SiC MCPMs). This effort at an earlier stage was reported in 'SiC Multi-Chip Power Modules as Power-System Building Blocks' (LEW-18008-1), NASA Tech Briefs, Vol. 31, No. 2 (February 2007), page 28. The following recapitulation of information from the cited prior article is prerequisite to a meaningful summary of the progress made since then: 1) SiC MCPMs are, more specifically, electronic power-supply modules containing multiple silicon carbide power integrated-circuit chips and silicon-on-insulator (SOI) control integrated-circuit chips. SiC MCPMs are being developed as building blocks of advanced expandable, reconfigurable, fault-tolerant power-supply systems. Exploiting the ability of SiC semiconductor devices to operate at temperatures, breakdown voltages, and current densities significantly greater than those of conventional Si devices, the designs of SiC MCPMs and of systems comprising multiple SiC MCPMs are expected to afford a greater degree of miniaturization through stacking of modules with reduced requirements for heat sinking; 2) The stacked SiC MCPMs in a given system can be electrically connected in series, parallel, or a series/parallel combination to increase the overall power-handling capability of the system. In addition to power connections, the modules have communication connections. The SOI controllers in the modules communicate with each other as nodes of a decentralized control network, in which no single controller exerts overall command of the system. Control functions effected via the network include synchronization of switching of power devices and rapid reconfiguration of power connections to enable the power system to continue to supply power to a load in the event of failure of one of the modules; and, 3) In addition to serving as building blocks of reliable power-supply systems, SiC MCPMs could be augmented with external control circuitry to make them perform additional power-handling functions as needed for specific applications. Because identical SiC MCPM building blocks could be utilized in such a variety of ways, the cost and difficulty of designing new, highly reliable power systems would be reduced considerably. This concludes the information from the cited prior article. The main activity since the previously reported stage of development was the design, fabrication, and testing a 120- VDC-to-28-VDC modular power-converter system composed of eight SiC MCPMs in a 4 (parallel)-by-2 (series) matrix configuration, with normally-off controllable power switches. The SiC MCPM power modules include closed-loop control subsystems and are capable of operating at high power density or high temperature. The system was tested under various configurations, load conditions, load-transient conditions, and failure-recovery conditions. Planned future work includes refinement of the demonstrated modular system concept and development of a new converter hardware topology that would enable sharing of currents without the need for communication among modules. Toward these ends, it is also planned to develop a new converter control algorithm that would provide for improved sharing of current and power under all conditions, and to implement advanced packaging concepts that would enable operation at higher power density.

Lostetter, Alexander↗

Conditions for Aeronomic Applicability of the Classical Electron Heat Conduction Formula

Conditions for the applicability of the classical formula for heat conduction in the electrons in ionized gas are investigated. In a fully ionised gas ( V(sub en) much greater than V(sub ei)), when the mean free path for electron-electron (or electron-ion) collisions is much larger than the characteristic thermal scale length of the observed system, the conditions for applicability break down. In the case of the Venus ionosphere this breakdown is indicated for a large fraction of the electron temperature data from altitudes greater than 180 km, for electron densities less than 10(exp 4)/cc cm. In a partially ionised gas such that V(sub en) much greater than V(sub ei) there is breakdown of the formula not only when the mean free path of electrons greatly exceeds the thermal scale length, but also when the gradient of neutral particle density exceeds the electron thermal gradient. It is shown that electron heat conduction may be neglected in estimating the temperature of joule heated electrons by observed strong 100 Hz electric fields when the conduction flux is limited by the saturation flux. The results of this paper support our earlier aeronomical arguments against the hypothesis of planetary scale whistlers for the 100 Hz electric field signal. In turn this means that data from the 100 Hz signal may not be used to support the case for lightning on Venus.

Cole, K. D.↗

Techno-Economic Analysis of CSP Incorporating sCO2 Brayton Power Cycles: Trade-Off Between Cost and Performance

Concentrating solar power (CSP) plants, thanks to the implementation of cost-competitive thermal energy storage, represent a dispatchable zero-emission alternative to traditional fossil fuel power plants. Next generation solar towers are expected to adopt high temperature receivers (>700 degrees C) coupled to sCO2-based power blocks, which optimal design is generally pushed towards the maximum cycle efficiency, often neglecting the economic impact with the justification that the main share of the capital cost is represented by the heliostat field. As result, the scientific literature lacks in comprehensive studies on techno-economic evaluation of CSP+sCO2 power plants addressing the important correlation that exists between system cost and performances. This work provides a preliminary techno-economic analysis of a solar power tower comparing four different cycle configurations for the sCO2 power block. Results have been reported on a Pareto front, highlighting the tradeoff between the plant investment cost and the solar-to-electricity plant efficiency. The trends of the optimization variables and cycle results have been reported to give useful insights about proper assumptions for the sCO2 power block design. The recompressed cycle with intercooling resulted as the most promising configuration and it has been further analyzed through a comparison of different solutions on the Pareto front. The cost breakdown of the sCO2 power block has been reported to highlight which components have the greatest impact on the overall plant cost and how they vary along the optimal solutions front. Eventually, the optimization has been repeated introducing a correlation to compute the turbomachinery isentropic efficiencies, to investigate their effect on the techno- economic analysis.

concentrated solar power↗

Spaceborne synthetic aperture radar pilot study

A pilot study of a spaceborne sidelooking radar is summarized. The results of the system trade studies are given along with the electrical parameters for the proposed subsystems. The mechanical aspects, packaging, thermal control and dynamics of the proposed design are presented. Details of the data processor are given. A system is described that allows the data from a pass over the U. S. to be in hard copy form within two hours. Also included are the proposed schedule, work breakdown structure, and cost estimate.

Source record↗

Advanced solar-propelled cargo spacecraft for Mars missions

At the University of Washington, three concepts for an unmanned, solar powered, cargo spacecraft for Mars-support missions have been investigated. These spacecraft are designed to carry a 50,000 kg payload from a low Earth orbit to a low Mars orbit. Each design uses a distinctly different propulsion system: a solar radiation absorption (SRA) system, a solar-pumped laser (SPL) system, and a solar powered mangetoplasmadynamic (MPD) arc system. The SRA directly converts solar energy to thermal energy in the propellant through a novel process developed at the University of Washington. A solar concentrator focuses sunlight into an absorption chamber. A mixture of hydrogen and potassium vapor absorbs the incident radiation and is heated to approximately 3700 K. The hot propellant gas exhausts through a nozzle to produce thrust. The SRA has an I(sub sp) of approximately 1000 sec and produces a thrust of 2940 N using two thrust chambers. In the SPL system, a pair of solar-pumped, multi-megawatt, CO2 lasers in sun-synchronous Earth orbit converts solar energy to laser energy. The laser beams are transmitted to the spacecraft via laser relay satellites. The laser energy heats the hydrogen propellant through a plasma breakdown process in the center of an absorption chamber. Propellant flowing through the chamber, heated by the plasma core, expands through a nozzle to produce thrust. The SPL has an I(sub sp) of 1285 sec and produces a thrust of 1200 N using two thrust chambers. The MPD system uses indium phosphide solar cells to convert sunlight to electricity, which powers the propulsion system. In this system, the argon propellant is ionized and electromagnetically accelerated by a magnetoplasmadynamic arc to produce thrust. The MPD spacecraft has an I(sub sp) of 2490 sec and produces a thrust of 100 N. Various orbital transfer options are examined for these concepts. In the SRA system, the mother ship transfers the payload into a very high Earth orbit and a small auxiliary propulsion system boosts the payload into a Hohmann transfer to Mars. The SPL spacecraft releases the payload as the spacecraft passes by Mars. Both the SRA-powered spacecraft and the SPL-powered spacecraft return to Earth for subsequent missions. The MPD-propelled spacecraft, however, remains at Mars as an orbiting space station. A patched conic approximation was used to determine a heliocentric interplanetary transfer orbit for the MPD propelled spacecraft. All three solar-powered spacecraft use an aerobrake procedure to place the payload into a low Mars parking orbit. The payload delivery times range from 160 days to 873 days (2.39 years).

Auziasdeturenne, J.↗

Multi-scale dynamics of atmospheric-pressure discharges ignited over liquid electrodes

A multiphase computational model of atmospheric-pressure gas discharges ignited over liquid electrodes is developed. The model takes into account both the liquid electrode motion under applied electric fields and plasma generation in the gas phase. The influence of the applied voltage and liquid properties (density, viscosity, and surface tension) on the liquid surface deformation is analyzed. It is shown that the shape of dynamic cones formed on the liquid surface differs from the static Taylor's cones. The influence of the liquid surface protrusions on gas breakdown dynamics is demonstrated. It is shown that the breakdown develops in two stages: first, a fast ionization wave propagates from the cathode to the anode, and then the cathode sheath collapses due to secondary electron emission from the liquid surface. It is shown that dynamics of the multiphase system containing gas, plasma, and liquid states is characterized by three disparate time scales: the fast electron time scale, the intermediate ion time scale, and the slow liquid dynamics time scale.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Probing quantum criticality in ferromagnetic CeRh 6 Ge 4

CeRh 6 Ge 4 is unusual in that its ferromagnetic transition can be suppressed continuously to zero temperature, i.e., to a ferromagnetic quantum-critical point (QCP), through the application of modest hydrostatic pressure. This discovery has raised the possibility that the ferromagnetic QCP may be of the Kondo-breakdown type characterized by a jump in Fermi volume, to which thermopower S measurements should be sensitive. Further, though S/T changes both sign and magnitude around the critical pressure P c ≈ 0.8 GPa, these changes are not abrupt but extend over a pressure interval from within the ferromagnetic state up to P c . Together with temperature and pressure variations in electrical resistivity and previously reported heat capacity, thermopower results point to the near coincidence of two sequential effects near P c , delocalization of 4f degrees of freedom through orbital-selective hybridization followed by quantum criticality of itinerant ferromagnetism.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Feasibility of Large High-Powered Solar Electric Propulsion Vehicles: Issues and Solutions

Human exploration beyond low Earth orbit will require the use of enabling technologies that are efficient, affordable, and reliable. Solar electric propulsion (SEP) has been proposed by NASA s Human Exploration Framework Team as an option to achieve human exploration missions to near Earth objects (NEOs) because of its favorable mass efficiency as compared to traditional chemical systems. This paper describes the unique challenges and technology hurdles associated with developing a large high-power SEP vehicle. A subsystem level breakdown of factors contributing to the feasibility of SEP as a platform for future exploration missions to NEOs is presented including overall mission feasibility, trip time variables, propellant management issues, solar array power generation, array structure issues, and other areas that warrant investment in additional technology or engineering development.

Capadona, Lynn A.↗

SNS Warm Linac Circulator Breakdown Considerations for the PPU Project

Multipacting in accelerating structures is a complex phenomenon about which there is much to be understood. While multipacting research efforts have primarily been focused on superconducting radio frequency (SRF) systems, normal conducting accelerating structures which have a higher thermal capacity, and a greater vacuum pressure tolerance could benefit from additional investigation. This research details multipacting simulation methods and the results of 3-D electromagnetic simulations of RF vacuum windows used on normal conducting linac (NCL) cavities. Benchmarking of the peak electric fields in these structures, benefits of material processing and possible techniques for reducing or eliminating multipacting activities are discussed.

Toby, George↗

Increasing Importance of Material Electrical Interaction with the Space Environment

The electrical properties of materials have always been important for spacecraft in charging environments. However, in recent years consideration of interactions of materials and systems with the plasma environment has become more and more important in spacecraft design. This has primarily been driven by independent factors including increase in power and high voltage power systems, operation of tethered satellites, and science requirements for electrostatic clean spacecraft. Increased need for power has led to increased operating voltages for spacecraft. The Upper Atmospheric Research Satellite (UARS) was one of the first to operate at near 100 V solar array potential and demonstrate that the spacecraft floated nearly the entire voltage negative of the ionospheric plasma. The high voltage, 160 V, of the solar arrays on the International Space Station (ISS) led to the requirement to have a plasma contactor to control structure potential relative to the local plasma. Issues such as sputtering, dielectric breakdown, capacitive energy storage in the structure, space debris impact induced arcs and other arcing mechanisms had to be addressed. Recently commercial satellites, driven to higher voltages for efficiency, have experienced arcing problems which led to severe, permanent power degradation. The first tethered satellite, Tethered Satellite System (TSS), was deployed from the Space Shuttle. A conductive coating was developed which provided a low resistivity and also the required solar absorptivity and emittance. Other tether systems are being designed which will have similar requirements but also long life and "bare tether" designs are also being built for flight experiments. The wire requires an electrically conductive coating with proper thermal control properties, which a bare wire doesn't possess. Increasing sophistication of scientific instruments and measurements which scientists want to make have led to increasing requirements for conducting thermal control coatings to provide electrostatic cleanliness. These issues, which are increasing the importance of electrical interaction of materials to the space environment, will be discussed in this paper as well as research into material development to meet thermal and electrical requirements and research to understand phenomena regarding such interactions.

Carruth, M. R., Jr.↗

Mobility and threshold voltage extraction in transistors with gate-voltage-dependent contact resistance

The mobility of emerging (e.g., two-dimensional, oxide, organic) semiconductors is commonly estimated from transistor current-voltage measurements. However, such devices often experience contact gating, i.e., electric fields from the gate modulate the contact resistance during measurements, which can lead conventional extraction techniques to estimate mobility incorrectly even by a factor >2. Although this error can be minimized by measuring transistors at high gate-source bias |V gs |, this regime is often inaccessible in emerging devices that suffer from high contact resistance or early gate dielectric breakdown. Here, we propose a method of extracting mobility in transistors with gate-dependent contact resistance that does not require operation at high |V gs |, enabling accurate mobility extraction even in emerging transistors with strong contact gating. Our approach relies on updating the transfer length method (TLM) and can achieve <10% error even in regimes where conventional techniques overestimate mobility by >2×

36 MATERIALS SCIENCE↗

Surge-Energy and Overvoltage Ruggedness of P-Gate GaN HEMTs

An essential ruggedness of power devices is the capability of safely withstanding the surge energy. The surge ruggedness of the GaN high-electron-mobility transistor (HEMT), a power transistor with no or minimal avalanche capability, has not been fully understood. This article unveils the comprehensive physics associated with the surge-energy withstand process and the failure mechanisms of p-gate GaN HEMTs. Two commercial p-gate GaN HEMTs with Ohmic- and Schottky-type gate contacts are studied. Two circuits are developed to study the device surge ruggedness: an unclamped inductive switching circuit is first used to identify the withstand dynamics and failure mechanisms, and a clamped inductive switching circuit with a controllable parasitic inductance is then designed to mimic the surge energy in converter-like switching events. The p-gate GaN HEMT is found to withstand the surge energy through a resonant energy transfer between the device capacitance and the load/parasitic inductance rather than a resistive energy dissipation as occurred in the avalanche. If the device resonant voltage goes below zero, the device reversely turns on and the inductor is discharged. The device failure occurs at the transient of peak resonant voltage and is limited by the device overvoltage capability rather than the surge energy, dV/dt , or overvoltage duration. Almost no energy is dissipated in the resonant withstand process and the device failure is dominated by an electric field rather than a thermal runaway. Furthermore, these results provide critical understandings on the ruggedness of GaN HEMTs and important references for their qualifications and applications.

42 ENGINEERING↗