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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 505 records · Page 28
All sourcesNASA NTRSDOE OSTI
DOE OSTI2013

Increasing the creation yield of shallow single defects in diamond by surface plasma treatment

Single Nitrogen-Vacancy (NV) centers in diamond close to the crystal surface are very promising magnetic field sensors with very high sensitivity. Here, we report the enhanced creation of very shallow (less than 3 nm below the diamond surface) NV centers by using fluorine and oxygen plasma treatment. We observe a four fold increase—from 0.11% to about 0.45% in the production yield when the sample surface is terminated with fluorine or oxygen atoms. This effect is explained by the stabilization of the NV's negative charge state which is influenced by the various defects present on the diamond surface.

36 MATERIALS SCIENCE↗
DOE OSTI2013

Temperature distributions in the laser-heated diamond anvil cell from 3-D numerical modeling

We present TempDAC, a 3-D numerical model for calculating the steady-state temperature distribution for continuous wave laser-heated experiments in the diamond anvil cell. TempDAC solves the steady heat conduction equation in three dimensions over the sample chamber, gasket, and diamond anvils and includes material-, temperature-, and direction-dependent thermal conductivity, while allowing for flexible sample geometries, laser beam intensity profile, and laser absorption properties. The model has been validated against an axisymmetric analytic solution for the temperature distribution within a laser-heated sample. Example calculations illustrate the importance of considering heat flow in three dimensions for the laser-heated diamond anvil cell. In particular, we show that a “flat top” input laser beam profile does not lead to a more uniform temperature distribution or flatter temperature gradients than a wide Gaussian laser beam.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2014

Software optimization for electrical conductivity imaging in polycrystalline diamond cutters

We previously reported on an electrical conductivity imaging instrument developed for measurements on polycrystalline diamond cutters. These cylindrical cutters for oil and gas drilling feature a thick polycrystalline diamond layer on a tungsten carbide substrate. The instrument uses electrical impedance tomography to profile the conductivity in the diamond table. Conductivity images must be acquired quickly, on the order of 5 sec per cutter, to be useful in the manufacturing process. This paper reports on successful efforts to optimize the conductivity reconstruction routine, porting major portions of it to NVIDIA GPUs, including a custom CUDA kernel for Jacobian computation.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Ultra-thin nanocrystalline diamond membranes as pressure sensors for harsh environments

Glass and diamond are suitable materials for harsh environments. Here, a procedure for fabricating ultra-thin nanocrystalline diamond membranes on glass, acting as an electrically insulating substrate, is presented. In order to investigate the pressure sensing properties of such membranes, a circular, highly conductive boron-doped nanocrystalline diamond membrane with a resistivity of 38 mΩ cm, a thickness of 150 nm, and a diameter of 555 μm is fabricated in the middle of a Hall bar structure. During the application of a positive differential pressure under the membrane (0–0.7 bar), four point piezoresistive effect measurements are performed. From these measurements, it can be concluded that the resistance response of the membrane, as a function of differential pressure, is highly linear and sensitive.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Photonic nano-structures on (111)-oriented diamond

We demonstrate the fabrication of single-crystalline diamond nanopillars on a (111)-oriented chemical vapor deposited diamond substrate. This crystal orientation offers optimal coupling of nitrogen-vacancy (NV) center emission to the nanopillar mode and is thus advantageous over previous approaches. We characterize single native NV centers in these nanopillars and find one of the highest reported saturated fluorescence count rates in single crystalline diamond in excess of 10{sup 6} counts per second. We show that our nano-fabrication procedure conserves the preferential alignment as well as the spin coherence of the NVs in our structures. Our results will enable a new generation of highly sensitive probes for NV magnetometry and pave the way toward photonic crystals with optimal orientation of the NV center's emission dipole.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Positron annihilation study for enhanced nitrogen-vacancy center formation in diamond by electron irradiation at 77 K

A compact ensemble of high density nitrogen-vacancy (NV) centers in diamond is essential to sense various external fields with a high precision at the nanoscale. Here, defects in type IIa and type Ib diamonds induced by 28 MeV electron irradiation at 77 K were studied by combining the positron annihilation spectroscopy and first-principles calculations. It is shown that the electron irradiation at 77 K can significantly enhance the NV center formation by directly converting 24% vacancies into the NV centers, indicating that it is an efficient way to produce the high density NV centers in the type Ib diamond.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Performance study of polycrystalline CVD diamond detectors for fast neutron monitoring

Diamond detectors using polycrystalline CVD diamond substrates of thickness 300μm and 100μm were fabricated for fast neutron monitoring application.. The characterization of detectors was carried out using various tests such as leakage current, capacitance and alpha particle response. The performance of detectors was evaluated for fast neutrons at different neutron yields. The results presented in this work demonstrate that the diamond detectors will be suitable for monitoring fast neutrons.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2014

A nitrogen doped low-dislocation density free-standing single crystal diamond plate fabricated by a lift-off process

A nitrogen-doped single crystal diamond plate with a low dislocation density is fabricated by chemical vapor deposition (CVD) from a high pressure high temperature synthetic type IIa seed substrate by ion implantation and lift-off processes. To avoid sub-surface damage, the seed surface was subjected to deep ion beam etching. In addition, we introduced a nitrogen flow during the CVD step to grow low-strain diamond at a relatively high growth rate. This resulted in a plate with low birefringence and a dislocation density as low as 400 cm{sup −2}, which is the lowest reported value for a lift-off plate. Reproducing this lift-off process may allow mass-production of single crystal CVD diamond plates with low dislocation density and consistent quality.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

High temperature photoelectron emission and surface photovoltage in semiconducting diamond

A non-equilibrium photovoltage is generated in semiconducting diamond at above-ambient temperatures during x-ray and UV illumination that is sensitive to surface conductivity. The H-termination of a moderately doped p-type diamond (111) surface sustains a surface photovoltage up to 700 K, while the clean (2 × 1) reconstructed surface is not as severely affected. The flat-band C 1s binding energy is determined from 300 K measurement to be 283.87 eV. The true value for the H-terminated surface, determined from high temperature measurement, is (285.2 ± 0.1) eV, corresponding to a valence band maximum lying 1.6 eV below the Fermi level. This is similar to that of the reconstructed (2 × 1) surface, although this surface shows a wider spread of binding energy between 285.2 and 285.4 eV. Photovoltage quantification and correction are enabled by real-time photoelectron spectroscopy applied during annealing cycles between 300 K and 1200 K. A model is presented that accounts for the measured surface photovoltage in terms of a temperature-dependent resistance. A large, high-temperature photovoltage that is sensitive to surface conductivity and photon flux suggests a new way to use moderately B-doped diamond in voltage-based sensing devices.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2014

Diamond electro-optomechanical resonators integrated in nanophotonic circuits

Diamond integrated photonic devices are promising candidates for emerging applications in nanophotonics and quantum optics. Here, we demonstrate active modulation of diamond nanophotonic circuits by exploiting mechanical degrees of freedom in free-standing diamond electro-optomechanical resonators. We obtain high quality factors up to 9600, allowing us to read out the driven nanomechanical response with integrated optical interferometers with high sensitivity. We are able to excite higher order mechanical modes up to 115 MHz and observe the nanomechanical response also under ambient conditions.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Impedance analysis of Al{sub 2}O{sub 3}/H-terminated diamond metal-oxide-semiconductor structures

Impedance spectroscopy (IS) analysis is carried out to investigate the electrical properties of the metal-oxide-semiconductor (MOS) structure fabricated on hydrogen-terminated single crystal diamond. The low-temperature atomic layer deposition Al{sub 2}O{sub 3} is employed as the insulator in the MOS structure. By numerically analysing the impedance of the MOS structure at various biases, the equivalent circuit of the diamond MOS structure is derived, which is composed of two parallel capacitive and resistance pairs, in series connection with both resistance and inductance. The two capacitive components are resulted from the insulator, the hydrogenated-diamond surface, and their interface. The physical parameters such as the insulator capacitance are obtained, circumventing the series resistance and inductance effect. By comparing the IS and capacitance-voltage measurements, the frequency dispersion of the capacitance-voltage characteristic is discussed.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Bias-enhanced post-treatment process for enhancing the electron field emission properties of ultrananocrystalline diamond films

The electron field emission (EFE) properties of ultrananocrystalline diamond films were markedly improved via the bias-enhanced plasma post-treatment (bep) process. The bep-process induced the formation of hybrid-granular structure of the diamond (bep-HiD) films with abundant nano-graphitic phase along the grain boundaries that increased the conductivity of the films. Moreover, the utilization of Au-interlayer can effectively suppress the formation of resistive amorphous-carbon (a-C) layer, thereby enhancing the transport of electrons crossing the diamond-to-Si interface. Therefore, bep-HiD/Au/Si films exhibit superior EFE properties with low turn-on field of E{sub 0} = 2.6 V/μm and large EFE current density of J{sub e} = 3.2 mA/cm{sup 2} (at 5.3 V/μm)

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Deposition and characterization of diamond thin films by HF-CVD method

Effect of reactor pressure and methane gas concentration on the growth of diamond films on Si (100) substrate by hot filament chemical vapor deposition (HFCVD) method has been studied in this work. Raman spectroscopy measurements of the obtained film confirmed the formation of a mixture of micro and nanocrystalline diamond by showing peaks at 1140 and 1334 cm{sup −1} wave shifts. Scanning electron microscopy results showed formation of well defined faceted diamond grains of 100–500 nm size. Average roughness of the films measured by a surface profilometer was in the range of 40–60 nm.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Determining the microwave coupling and operational efficiencies of a microwave plasma assisted chemical vapor deposition reactor under high pressure diamond synthesis operating conditions

The microwave coupling efficiency of the 2.45 GHz, microwave plasma assisted diamond synthesis process is investigated by experimentally measuring the performance of a specific single mode excited, internally tuned microwave plasma reactor. Plasma reactor coupling efficiencies (η) > 90% are achieved over the entire 100–260 Torr pressure range and 1.5–2.4 kW input power diamond synthesis regime. When operating at a specific experimental operating condition, small additional internal tuning adjustments can be made to achieve η > 98%. When the plasma reactor has low empty cavity losses, i.e., the empty cavity quality factor is >1500, then overall microwave discharge coupling efficiencies (η{sub coup}) of >94% can be achieved. A large, safe, and efficient experimental operating regime is identified. Both substrate hot spots and the formation of microwave plasmoids are eliminated when operating within this regime. This investigation suggests that both the reactor design and the reactor process operation must be considered when attempting to lower diamond synthesis electrical energy costs while still enabling a very versatile and flexible operation performance.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2015

Synthesis of ultra-nano-carbon composite materials with extremely high conductivity by plasma post-treatment process of ultrananocrystalline diamond films

Needle-like diamond grains encased in nano-graphitic layers are an ideal granular structure of diamond films to achieve high conductivity and superior electron field emission (EFE) properties. This paper describes the plasma post-treatment (ppt) of ultrananocrystalline diamond (UNCD) films at low substrate temperature to achieve such a unique granular structure. The CH{sub 4}/N{sub 2} plasma ppt-processed films exhibit high conductivity of σ = 1099 S/cm as well as excellent EFE properties with turn-on field of E{sub 0} = 2.48 V/μm (J{sub e} = 1.0 mA/cm{sup 2} at 6.5 V/μm). The ppt of UNCD film is simple and robust process that is especially useful for device applications.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Optoelectronic properties of p-diamond/n-GaN nanowire heterojunctions

In this work, nanodiodes comprised of n-GaN nanowires on p-diamond substrates are investigated. The electric transport properties are discussed on the basis of simulations and determined experimentally for individual p-diamond/n-GaN nanodiodes by applying conductive atomic force microscopy. For low doping concentrations, a high rectification ratio is observed. The fabrication of a prototype nanoLED device on the basis of ensemble nanowire contacts is presented, showing simultaneous electroluminescence in the UV and the green spectral range which can be ascribed to hole injection into the n-GaN nanowires and electron injection into the p-diamond, respectively. In addition, the operation and heat distribution of the nanoLED device are visualized by active thermographic imaging.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Time differentiated nuclear resonance spectroscopy coupled with pulsed laser heating in diamond anvil cells

Developments in pulsed laser heating applied to nuclear resonance techniques are presented together with their applications to studies of geophysically relevant materials. Continuous laser heating in diamond anvil cells is a widely used method to generate extreme temperatures at static high pressure conditions in order to study the structure and properties of materials found in deep planetary interiors. The pulsed laser heating technique has advantages over continuous heating, including prevention of the spreading of heated sample and/or the pressure medium and, thus, a better stability of the heating process. Time differentiated data acquisition coupled with pulsed laser heating in diamond anvil cells was successfully tested at the Nuclear Resonance beamline (ID18) of the European Synchrotron Radiation Facility. We show examples applying the method to investigation of an assemblage containing ε-Fe, FeO, and Fe{sub 3}C using synchrotron Mössbauer source spectroscopy, FeCO{sub 3} using nuclear inelastic scattering, and Fe{sub 2}O{sub 3} using nuclear forward scattering. These examples demonstrate the applicability of pulsed laser heating in diamond anvil cells to spectroscopic techniques with long data acquisition times, because it enables stable pulsed heating with data collection at specific time intervals that are synchronized with laser pulses.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2016

Sub-band gap photo-enhanced secondary electron emission from high-purity single-crystal chemical-vapor-deposited diamond

Secondary-electron-emission (SEE) current measured from high-purity, single-crystal (100) chemical-vapor-deposited diamond is found to increase when sub-band gap (3.06 eV) photons are incident on the hydrogenated surface. Although the light does not produce photoemission directly, the SEE current increases by more than a factor of 2 before saturating with increasing laser power. In energy distribution curves (EDCs), the emission peak shows a corresponding increase in intensity with increasing laser power. However, the emission-onset energy in the EDCs remains constant, indicating that the bands are pinned at the surface. On the other hand, changes are observed on the high-energy side of the distribution as the laser power increases, with a well-defined shoulder becoming more pronounced. From an analysis of this feature in the EDCs, it is deduced that upward band bending is present in the near-surface region during the SEE measurements and this band bending suppresses the SEE yield. However, sub-band gap photon illumination reduces the band bending and thereby increases the SEE current. Because the bands are pinned at the surface, we conclude that the changes in the band levels occur below the surface in the electron transport region. Sample heating produces similar effects as observed with sub-band gap photon illumination, namely, an increase in SEE current and a reduction in band bending. However, the upward band bending is not fully removed by either increasing laser power or temperature, and a minimum band bending of ∼0.8 eV is established in both cases. The sub-band gap photo-excitation mechanism is under further investigation, although it appears likely at present that defect or gap states play a role in the photo-enhanced SEE process. In the meantime, the study demonstrates the ability of visible light to modify the electronic properties of diamond and enhance the emission capabilities, which may have potential impact for diamond-based vacuum electron sources, particle detectors, and other electronic devices.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗