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At least 505 records · Page 28

Unraveling the Effects of Cobalt on Crystal Growth and Solution Behavior of Nb 6 P 2 W 12 -based Dimeric Clusters

We report the synthesis, characterization, and solution self-assembly of plenary Nb 6 P 2 W 12 -based transition-metal substituted polyoxometalate, which is obtained by simply adding transition metals (Co 2+ ) into aqueous solution containing cluster [(NbO 2 ) 6 P 2 W 12 O 56 ] 12- , which is obtained by an in situ synthetic method. The incorporation of Co 2+ ions significantly affects the crystal structure, resulting in the formation of a 1D chain-like crystal and the first example of a niobotungstate-based cobalt derivative cluster. The behavior and stability of this cluster in solution are confirmed by time-resolved static light scattering, dynamic light scattering, small-angle X-ray scattering, and electrospray mass spectrometry studies.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Bridgman crystal growth

The objective of this theoretical research effort was to improve the understanding of the growth of Pb(x)Sn(1-x)Te and especially how crystal quality could be improved utilizing the microgravity environment of space. All theoretical growths are done using the vertical Bridgman method. It is believed that improved single crystal yields can be achieved by systematically identifying and studying system parameters both theoretically and experimentally. A computational model was developed to study and eventually optimize the growth process. The model is primarily concerned with the prediction of the thermal field, although mass transfer in the melt and the state of stress in the crystal were of considerable interest. The evolution is presented of the computer simulation and some of the important results obtained. Diffusion controlled growth was first studied since it represented a relatively simple, but nontheless realistic situation. In fact, results from this analysis prompted a study of the triple junction region where the melt, crystal, and ampoule wall meet. Since microgravity applications were sought because of the low level of fluid movement, the effect of gravitational field strength on the thermal and concentration field was also of interest. A study of the strength of coriolis acceleration on the growth process during space flight was deemed necessary since it would surely produce asymmetries in the flow field if strong enough. Finally, thermosolutal convection in a steady microgravity field for thermally stable conditions and both stable and unstable solutal conditions was simulated.

Carlson, Frederick↗

Materials preparation, single-crystal growth, and the phase diagram of the cuprate high-temperature superconductor La 1.6-x Nd 0.4 Sr x CuO 4

One branch of the La-214 family of cuprate superconductors, La 1.6-x Nd 0.4 Sr x CuO 4 (NdLSCO), has been of significant and sustained interest, in large part because it displays the full complexity of the phase diagram for canonical hole-doped, high TC superconductivity, while also displaying relatively low superconducting critical temperatures. The low superconducting TC’s imply that experimentally accessible magnetic fields can suppress the superconductivity to zero temperature. In particular, this has enabled various transport and thermodynamic studies of the T = 0 ground state in Nd-LSCO, free of superconductivity, across the critical doping p* = 0.23 where the pseudogap phase ends. The strong dependence of its superconducting properties on its crystal symmetry has itself motivated careful studies of the Nd-LSCO structural phase diagram. This paper provides a systematic study and summary of the materials preparation and characterization of both single crystal and polycrystalline samples of Nd-LSCO. Single-phase polycrystalline samples with x spanning the range from 0.01 to 0.40 have been synthesized, and large single crystals of La 1.6-x Nd 0.4 Sr x CuO 4 for select x across the region (0.07, 0.12, 0.17, 0.19, 0.225, 0.24, and 0.26) were grown by the optical floating zone method. Furthermore, systematic neutron and X-ray diffraction studies on these samples were performed at both low and room temperatures, 10 K and 300 K, respectively. These studies allowed us to follow the various structural phase transitions and propose an updated structural phase diagram for NdLSCO. In particular, we found that the low-temperature tetragonal (LTT) phase ends at a critical doping p LTT = 0.255±0.005, clearly separated from p*.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Thermal-capillary analysis of Czochralski and liquid encapsulated Czochralski crystal growth. II - Processing strategies

The pseudosteady-state heat transfer model developed in a previous paper is augmented with constraints for constant crystal radius and melt/solid interface deflection. Combinations of growth rate, and crucible and bottom-heater temperatures are tested as processing parameters for satisfying the constrained thermal-capillary problem over a range of melt volumes corresponding to the sequence occuring during the batchwise Czochralski growth of a small-diameter silicon crystal. The applicability of each processing strategy is judged by the range of existence of the solution, in terms of melt volume and the values of the axial and radial temperature gradients in the crystal.

Derby, J. J.↗

Crystal Growth and Characterization of Europium-Doped Rubidium Calcium Bromide Scintillators

National security strategies like gamma spectroscopy and high-energy X-ray radiography are limited, in part, by the scintillator used, prompting research into novel materials with improved properties. In this paper, Eu 2+ activated rubidium calcium bromide scintillators were grown via the vertical Bridgman method with a range of dopant concentrations. Light yield, energy resolution, and the afterglow of Rb 4 CaBr 6 :Eu and RbCaBr 3 :Eu improved with increasing Eu 2+ concentration, and scintillation decay time increased. The highest light yields of Rb 4 CaBr 6 :Eu and RbCaBr 3 :Eu were 71000 and 45000 ph/MeV, respectively.

36 MATERIALS SCIENCE↗

Synthesis, Crystal Growth, and Transport Properties of van der Waals Tetrel Pnictide GeAs 2

Here, bulk GeAs 2 was synthesized utilizing a vapor transport reaction with iodine. Thermal stability tests under dynamic conditions show that GeAs 2 decomposes below 700 K, in contrast to the reported congruent melting at 1029 K measured at saturated As vapor pressure. GeAs 2 is a p-type narrow bandgap (~0.4 eV) semiconductor. From a thermoelectric standpoint, GeAs 2 outperforms previous computational predictions in thermopower and thermal conductivity. Yet, electrical resistivity is significantly higher than predicted values, resulting in the low overall thermoelectric figure of merit. Aliovalent doping strategies for GeAs 2 should be developed to achieve reasonable thermoelectric performance.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Identification of Gravity-Related Effects on Crystal Growth From Melts With an Immiscibility Gap

This work involves an experimental-numerical approach to study the effects of natural and Marangoni convections on solidification of single crystals from a silicate melt with a liquid-liquid immiscibility gap. Industrial use of crystals grown from silicate melts is becoming increasingly important in electronic, optical, and high temperature structural applications. Even the simplest silicate systems like Al203-SiO2 have had, and will continue to have, a significant role in the development of traditional and advanced ceramics. A unique feature of crystals grown from the silicate systems is their outstanding linear electro-optic properties. They also exhibit exceptionally high optical rotativity. As a result, these crystals are attractive materials for dielectric, optical, and microwave applications. Experimental work in our laboratory has indicated that directional solidification of a single crystal mullite appears to be preceded by liquid-liquid phase separation in the melt. Disruption of the immiscible state results in crystallization of a two phase structure. There is also evidence that mixing in the melt caused by density-driven convection can significantly affect the stability of the immiscible liquid layers and result in poly-crystalline growth. On earth, the immiscible state has only been observed for small diameter crystals grown in float zone systems where natural convection is almost negligible. Therefore, it is anticipated that growth of large single crystals from silicate melts would benefit from microgravity conditions because of the reduction of the natural convective mixing. The main objective of this research is to determine the effects of transport processes on the phase separation in the melt during growth of a single crystal while addressing the following issues: (1) When do the immiscible layers form and are they real?; (2) What are the main physical characteristics of the immiscible liquids?; and (3) How mixing by natural or Marangoni convection affects the stability of the phase separated melt.

Kassemi, M.↗

Seeded crystal growth of pseudobinary systems with large liquidus-solidus separation

The design and execution of seeded melt growth involving concentrated alloys is strongly dependent on the crystal-melt interface temperature and its change during seeding and growth. Thermodynamic instabilities during the seeding process can be controlled by the choice of the seed and melt composition and by the axial temperature gradient of the growth apparatus. These basic factors controlling seeded melt growth of concentrated alloys are of major importance for planning space experiments.

Bourret, E. D.↗

Crystal growth from the vapor phase experiment MA-085

Three vapor transport experiments on multicomponent systems were performed during the Apollo Soyuz mission to determine the effects of microgravity forces on crystal morphology and mass transport rates. The mixed systems used germanium selenide, tellurium, germanium tetraiodide (transport agent), germanium monosulfide, germanium tetrachloride (transport agent), and argon (inert atmosphere). The materials were enclosed in evacuated sealed ampoules of fused silica and were transported in a temperature gradient of the multipurpose electric furnace onboard the Apollo Soyuz spacecraft. Preliminary evaluation of 2 systems shows improved quality of space grown crystals in terms of growth morphology and bulk perfection. This conclusion is based on a direct comparison of space grown and ground based crystals by means of X-ray diffraction, microscopic, and chemical etching techniques. The observation of greater mass transport rates than predicted for a microgravity environment by existing vapor transport models indicates the existence of nongravity caused transport effects in a reactive solid/gas phase system.

Wiedemeir, H.↗

Flight experiment on acousto-optic crystal growth

The physical vapor transport method was used for growing mercurous chloride crystals in different convective conditions. Optical homogeneity is found to be extremely dependent on convection levels. Results of numerical studies indicate that for a gravity level of 0.001 g or less the Stefan wind drives the flow and no recirculating cells are observed.

Singh, N. B.↗

Polymer crystallization in a temperature gradient field with controlled crystal growth rate

A method is described for studying the influence of a temperature gradient on the crystallization of quiescent polymer melts. The apparatus used consists of two brass plates with embedded electrical resistance heaters and cooling coils. The crystallizations experiments were conducted by placing polymer specimens between the paltes, and manually adjusting heaters and cooling fluids for temperature control. Linear polyethylene, isotactic polyprophylene, and a high density polyethylene were used. It is concluded that the role of a temperature gradient in producing oriented crystallization is in producing conditions which lead the spherulitic growth pattern to proceed primarily in one direction. Steep gradients diminish the penetration of supercooling and favors oriented growth.

Hansen, D.↗

Solidification (crystal growth) in the presence of gravitational forces

The surface tension behavior of doped and undoped InSb melts was investigated as well as their temperature and composition dependence. Surface tension in InSb melts was determined using the sessile-drop technique covering the temperature range from 530 C to 880 C. A linear regression of the data obtained shows that the temperature dependence of sigma is 392- (T-530) x (7000) plus or minus 10 dyne/cm. The d sigma/d Tau for intrinsics InSb is less than that previously reported. On the basis of the surface tension data obtained, it is concluded that surface tension induced convective flow velocities in InSb under reduced gravity conditions range from zero to at most 1 cm/sec. Accordingly, no interference with dopant segregation can be expected during growth in space because the momentum boundary layer (at the crystal melt interface) associated with any Marangoni-type convective flows would, at the given growth rate, be significantly larger than the predicted diffusion boundary layer thickness.

Gatos, H. C.↗

The 3-5 semiconductor solid solution single crystal growth

Techniques used for liquid and vapor phase epitaxy of gallium indium arsenide are described and the difficulties encountered are examined. Results show that the growth of bulk III-V solid solution single crystals in a low gravity environment will not have a major technological impact. The float zone technique in a low gravity environment is demonstrated using cadmium telluride. It is shown that this approach can result in the synthesis of a class of semiconductors that can not be grown in normal gravity because of growth problems rooted in the nature of their phase diagrams.

Gertner, E. R.↗

Single crystal growth and characterization of new Zintl phase Ca 9 Zn 3.1 In 0.9 Sb 9

Complex Zintl phases have yielded a large variety of promising new thermoelectric materials. Here we report the discovery of the new Zintl phase Ca 9 (Zn 1– x In x ) 4 Sb 9 ( x ~ 0.9), needle-like crystals of which were serendipitously obtained from an In- and Sb-rich flux. Although its composition is reminiscent of Ca 9 Zn 4+ x Sb 9 , an excellent thermoelectric material with zT > 1, the substitution of In on the Zn site leads to the formation of an entirely new structure type. Single crystal X-ray diffraction revealed a structure characterized by T Sb 4 tetrahedra ( T = statistically disordered Zn and In atoms) and ZnSb 3 triangular units, which share common corners to form [ T 4 Sb 9 ] 18– polyanions. The average structure was found to have hexagonal symmetry. The valence electron count in this heavily-disordered structure appears to follows the Zintl-Klemm rules, suggesting semiconducting behavior. Single crystal electrical conductivity and Seebeck coefficient measurements support this conclusion, suggesting that the as-grown crystals are degenerate p -type semiconductors.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Segregation during directional melting and its implications on seeded crystal growth: A theoretical analysis

Directional melting of binary systems, as encountered during seeding in melt growth, is analyzed for concurrent compositional changes at the crystal-melt interface. It is shown that steady state conditions cannot normally be reached during seeding and that the growth interface temperature at the initial stages of seeded growth is a function of backmelt conditions. The theoretical treatment is numerically applied to Hg1-xCdXTe and Ga-doped Ge.

Bourret, E. D.↗

Single crystal growth and electronic structure of Rh-doped Sr 3 Ir 2 O 7

Ruddlesden-Popper iridate Sr 3 Ir 2 O 7 is a spin–orbit coupled Mott insulator. Hole doped Sr 3 Ir 2 O 7 provides an ideal platform to study the exotic quantum phenomena that occur near the metal–insulator transition (MIT) region. Rh substitution of Ir is an effective method to induce hole doping into Sr 3 Ir 2 O 7 . However, the highest doping level reported in Sr 3 (Ir 1− x Rh x ) 2 O 7 single crystals was only around 3%, which is far from the MIT region. In this paper, we report the successful growth of single crystals of Sr 3 (Ir 1− x Rh x ) 2 O 7 with a doping level of ~ 9%. The samples have been fully characterized, demonstrating the high quality of the single crystals. Transport measurements have been carried out, confirming the tendency of MIT in these samples. The electronic structure has also been examined by angle-resolved photoemission spectroscopy (ARPES) measurements. Our results establish a platform to investigate the heavily hole doped Sr 3 Ir 2 O 7 compound, which also provide new insights into the MIT with hole doping in this material system.

Physics↗

Crystal Growth, Optical and Scintillation Properties of Eu 2+ -doped TlSr 2 Br 5

Crystals of undoped and Eu 2+ -doped TlSr 2 Br 5 of up to 16 mm in diameter and 50 mm in length were grown by the Vertical Bridgman technique. TlSr 2 Br 5 has the monoclinic crystal structure with space group P21/c. Its density and Z eff are 5.03 g/cm 3 and 58.6, respectively. Radioluminescence spectra of undoped and Eu 2+ -doped TlSr 2 Br 5 feature a broad emission band peaking at about 440 nm for undoped and 520 nm for Eu 2+ -doped crystals. The light yield of undoped TlSr 2 Br 5 is 42,000 ph/MeV, which increases to 55,000 ph/MeV for Eu 2+ -doped crystals. The energy resolution at 662 keV ( 137 Cs) is about 5 – 6% (FWHM). As a result, the scintillation decay of undoped and Eu 2+ -doped TlSr 2 Br 5 is of the order of 100s of nanoseconds.

Bridgman technique↗

Data acquisition from a crystal growth furnace

Digital acquisition from a furnace for growing the lead tin telluride crystal based on Asyst software is described. It is shown that the use of Asyst for the acquisition of experimental data makes it possible to handle large amounts of data and to drastically reduce the time required for displaying the data from several hours to less than 5 minutes.

Woodell, Glenn A.↗