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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 505 records · Page 28
All sourcesNASA NTRSDOE OSTI
DOE OSTI2019

Rapid thermal processing of cost-effective contacts for silicon solar cells

This paper reports on the investigation of rapid thermal processing (RTP) of contacting the Al-BSF solar cell with Ag, Cu, and Ni in conjunction with aerosol printing technique. The study showed a liftoff and delamination, respectively, for the bi and tri stack layers of Ag frit/Ni and Ag frit/Ni/Cu fired above 790 degrees C peak firing temperature. The 770 degrees C peak firing temperature gave excellent electrical performance for both bi and tri stack layer contacts, which is not favorable to forming thick back surface field (BSF) required for high open circuit voltage (VOC). This suggests that the bilayer and trilayer contacts involving Ag frit are limited to low peak firing temperature, but Ni frit, on the other hand, showed a wider firing temperature range. This is supported by low reverse saturation current density (J02) of 1.1 x 10-11 A/cm2 and high shunt resistance (RSH) of 5750 ..omega.. cm2 for the Ni frit fired at 800 degrees C peak firing temperature. More so, the adhesion of Ni Frit to silicon is better than Ag counterpart as evidenced in the SEM micrograph. Thus, by adopting RTP Ni/Cu contacts, the cost of metallization of solar cell can be dropped from 35% of total processing cost to only 5% to 6%, which is approximately 30% drop in the total cost of processing.

14 SOLAR ENERGY↗
DOE OSTI2013

Ultra-low contact resistance at an epitaxial metal/oxide heterojunction through interstitial site doping

The ability to form reliable, low-resistance Ohmic contacts is of critical importance to the ongoing development of oxide electronics. Most metals form Schottky barriers when deposited on oxide surfaces. Ohmic contacts rarely occur, and the associated contact resistances are not particularly low. Little is known at an atomistic level about what leads to a good Ohmic contact on a wide-gap oxide. Here we describe the structure of a simple, yet exceptionally low-contact resistance Ohmic metal on an important oxide semiconductor -- epitaxial Cr on Nb-doped SrTiO3(001). Heteroepitaxial growth is accompanied by Cr diffusion into the STO and occupation of interstitial sites within the first few atomic planes. Interstitial Cr is ionized and the resulting electrons occupy the STO conduction band, resulting in effective metallization near the interface.

Environmental Molecular Sciences Laboratory↗
DOE OSTI2024

Microstructural Passivation of Patterned Al 2 O 3 Back Contacts on CdS/CdTe Solar Cells

Abstract Patterned aluminum oxide (Al 2 O 3 ) back contact on cadmium telluride (CdTe) solar cells can effectively mitigate the loss of the majority carriers while retaining the passivation benefits for minority carriers. This study investigates the impact of the point‐contact geometry on cell performance, where the spacing of the microholes is systematically varied at a constant microhole diameter (≈16 µm). Microhole arrays are created on an evaporated Al 2 O 3 layer (≈30 nm) on CdTe using laser‐beam lithography and selective wet etching processes. Comparative analysis indicates a significant decrease in fill factor (FF) and short‐circuit current ( I SC ) when the contact fraction falls below 30%, likely due to the Al 2 O 3 barrier impeding majority carriers. Above this fraction, FF and I SC are comparable to those of baseline CdTe cells without Al 2 O 3 . Open‐circuit voltage ( V OC ) shows a gradual decrease as Al 2 O 3 coverage is reduced but exhibits a slight increase (<15 mV) when the contact fraction exceeds 30%. Cathodoluminescence (CL) characterization reveals that significantly improved radiative recombination occurs within the CdTe grain bulk with Al 2 O 3 , whereas this effect on grain boundaries is minimal. The findings imply complex local carrier dynamics in the patterned back‐contact region, closely tied to the microstructural properties of CdTe‐based solar cells.

Roy, Etee Kawna↗
DOE OSTI2017

The Surprising Importance of Peptide Bond Contacts in Drug–Protein Interactions

The study of noncovalent interactions, notably including drug–protein binding, relies heavily on the language of localized functional group contacts: hydrogen bonding, π–π interactions, CH–π contacts, halogen bonding, etc. Applying the state-of-the-art functional group symmetry-adapted perturbation theory (F-SAPT) to an important question of chloro versus methyl aryl substitution in factor Xa inhibitor drugs, we find that a localized contact model provides an incorrect picture for the origin of the enhancement of chloro-containing ligands. Instead, the enhancement is found to originate from many intermediate-range contacts distributed throughout the binding pocket, particularly including the peptide bonds in the protein backbone. The contributions from these contacts are primarily electrostatic in nature, but require ab initio computations involving nearly the full drug–protein pocket system to be accurately quantified.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2018

Device physics underlying silicon heterojunction and passivating‐contact solar cells: A topical review

Abstract The device physics of commercially dominant diffused‐junction silicon solar cells is well understood, allowing sophisticated optimization of this class of devices. Recently, so‐called passivating‐contact solar cell technologies have become prominent, with Kaneka setting the world's silicon solar cell efficiency record of 26.63% using silicon heterojunction contacts in an interdigitated configuration. Although passivating‐contact solar cells are remarkably efficient, their underlying device physics is not yet completely understood, not in the least because they are constructed from diverse materials that may introduce electronic barriers in the current flow. To bridge this gap in understanding, we explore the device physics of passivating contact silicon heterojunction (SHJ) solar cells. Here, we identify the key properties of heterojunctions that affect cell efficiency, analyze the dependence of key heterojunction properties on carrier transport under light and dark conditions, provide a self‐consistent multiprobe approach to extract heterojunction parameters using several characterization techniques (including dark J‐V, light J‐V, C‐V, admittance spectroscopy, and Suns‐V oc ), propose design guidelines to address bottlenecks in energy production in SHJ cells, and develop a process‐to‐module modeling framework to establish the module's performance limits. We expect that our proposed guidelines resulting from this multiscale and self‐consistent framework will improve the performance of future SHJ cells as well as other passivating contact‐based solar cells.

Chavali, Raghu V. K.↗
DOE OSTI2014

PHLPP1 regulates contact inhibition by dephosphorylating Mst1 at the inhibitory site

Highlights: • PHLPP1 regulates contact inhibition by dephosphorylating Mst1 at Thr{sup 387}. • Overexpression of PHLPP1 sensitizes contact inhibition. • Tumor cells with suppressed PHLPP1 expression are refractory to apoptosis and highly proliferative. • Loss or down-regulation of PHLPP1 may drive tumor development and progression. - Abstract: Contact inhibition has been largely elusive despite that a loss of contact inhibition is a critical event for cancer development and progression. Here, we report that PHLPP1 is a binding protein for Mst1 and it modulates the Hippo pathway by dephosphorylating Mst1 at the inhibitory Thr{sup 387} of Mst1. Yap1 was localized predominantly in the nucleus but marginally in the cytoplasm in HeLa cells under sparse conditions, whereas the functional protein was more directed to sequestration in the cytoplasm under dense environments. Furthermore, loss of PHLPP1 resulted in a failure of the apoptotic control. It is interesting that down-regulated expression of PHLPP1 appears to mimic the loss of contact inhibition, a hallmark of cancer.

60 APPLIED LIFE SCIENCES↗
DOE OSTI2018

Keratinocytes negatively regulate the N-cadherin levels of melanoma cells via contact-mediated calcium regulation

Highlights: • Human keratinocyte cells reduce the N-cadherin levels of co-cultured melanoma cells. • Cell-to-cell contact is necessary for this keratinocyte-mediated N-cadherin reduction. • Keratinocytes reduce intracellular calcium in co-cultured melanoma cells. • Keratinocytes reduce the expression of TRPCs in contacting melanoma cells. In human skin, melanocytes and their neighboring keratinocytes have a close functional interrelationship. Keratinocytes, which represent the prevalent cell type of human skin, regulate melanocytes through various mechanisms. Here, we use a keratinocyte and melanoma co-culture system to show for the first time that keratinocytes regulate the cell surface expression of N-cadherin through cell-cell contact. Compared to mono-cultured human melanoma A375 cells, which expressed high levels of N-cadherin, those co-cultured with the HaCaT human keratinocyte cell line showed reduced levels of N-cadherin. This reduction was most evident in areas of A375 cells that underwent cell-cell contact with the HaCaT cells, whereas HaCaT cell-derived extracellular matrix and conditioned medium both failed to reduce N-cadherin levels. The intracellular level of calcium in co-cultured A375 cells was lower than that in mono-cultured A375 cells, and treatment with a cell-permeant calcium chelator (BAPTA) reduced the N-cadherin level of mono-cultured A375 cells. Furthermore, co-culture with HaCaT cells reduced the expression levels of transient receptor potential cation channel (TRPC) 1, −3 and −6 in A375 cells, and siRNA-mediated multi-depletion of TRPC1, -3 and -6 reduced the N-cadherin level in these cells. Taken together, these data suggest that keratinocytes negatively regulate the N-cadherin levels of melanoma cells via cell-to-cell contact-mediated calcium regulation.

60 APPLIED LIFE SCIENCES↗
DOE OSTI2018

Thermal resistance of pressed contacts of aluminum and niobium at liquid helium temperatures

Here, we examine the resistance to heat flow across contacts of mechanically pressed aluminum and niobium near liquid helium temperatures for designing a thermally conducting joint of aluminum and superconducting niobium. Measurements in the temperature range of 3.5 K to 5.5 K show the thermal contact resistance to grow as a near-cubic function of decreasing temperature, indicating phonons to be the primary heat carriers across the interface. In the 4 kN to 14 kN range of pressing force the contact resistance shows linear drop with the increasing force, in agreement with the model of micro-asperity plastic deformation at pressed contacts. Several thermal contact resistance models as well as the phonon diffuse mismatch model of interface thermal resistance are compared with the experimental data. The diffuse mismatch model shows closest agreement. The joints are further augmented with thin foil of indium, which lowers the joint resistance by an order of magnitude. The developed joint has nearly 1 K*cm2/W of thermal resistance at 4.2 K, is demountable, and free of the thermally resistive interfacial alloy layer that typically exists at welded, casted, or soldered joints of dissimilar metals.

43 PARTICLE ACCELERATORS↗
DOE OSTI2022

GaAs Thermophotovoltaic Patterned Dielectric Back Contact Devices with Improved Sub-Bandgap Reflectance

We demonstrate GaAs thermophotovoltaic (TPV) devices with a patterned dielectric back contact (PDBC) architecture, featuring a dielectric spacer between the semiconductor and back metal contact over most of the back surface for high reflectance, and metal point contacts over a smaller area for electrical conduction. In the TPV application, high sub-bandgap reflectance is needed to reflect unused sub-bandgap photons to the thermal emitter to minimize energy losses in this portion of the thermal spectrum. We explore different PDBC fabrication processes with SU-8 and SiO2 dielectric spacer layers to maximize sub-bandgap reflectance while minimizing series resistance to increase TPV conversion efficiency. We successfully demonstrate GaAs SU-8 PDBC TPV devices with 2200 degrees C blackbody-weighted sub-bandgap reflectance of 94.9% and 96.5% with and without a front metal grid, respectively. This is 0.7% and 2.3% (absolute) higher than the mean sub-bandgap reflectance of 94.2% for GaAs baseline TPV devices with 100% Au back contact with front metal grid. Lower sub-bandgap reflectance in TPV devices with front grids indicates the front grid induces light scattering leading to additional parasitic absorption in the TPV device. We also show that for higher contact coverage fractions, the PDBC reflectance cannot in general be treated by a linear interpolation using simple 1D transfer matrix method modeling and should be treated instead as a diffraction grating by solving Maxwell's equations in 3D.

energy storage↗
DOE OSTI2018

Oxysterol-binding protein-related protein (ORP) 6 localizes to the ER and ER-plasma membrane contact sites and is involved in the turnover of PI4P in cerebellar granule neurons

Oxysterol-binding protein (OSBP)-related proteins (ORPs) are conserved lipid binding proteins found in organisms ranging from yeast to mammals. Recent findings have indicated that these proteins mainly localize to contact sites of 2 different membranous organelles. ORP6, a member of the ORP subfamily III, is one of the least studied ORPs. Using approaches in molecular cell biology, we attempted to study the characteristics of ORP6 and found that ORP6 is abundantly expressed in mouse cultured neurons. Deconvolution microscopy of cultured cerebellar granular cells revealed that ORP6 is localized to the endoplasmic reticulum (ER) and ER–plasma membrane (PM) contact sites, where it co-localized with extended synaptotagmin2 (E-Syt2), a well-known ER–PM contact site marker. E-Syt2 also co-localized with ORP3, another subfamily III member, and ORP5, a subfamily IV member. However, ORP5 does not distribute to the same ER-PM contact sites as subfamily III members. Also, the co-expression of ORP3 but not ORP5 altered the distribution of ORP6 into the processes of cerebellar neurons. Immunoprecipitation demonstrated binding between the intermediate region of ORP6 and ORP3 or ORP6 itself. Additionally, the localization of ORP6 in the PM decreased when co-expressed with the intermediate region of ORP6, in which the pleckstrin homology (PH) domain and OSBP-related ligand binding domain (ORD) are deleted. Over-expression of this intermediate region shifted the location of a phophtidylinositol-4-phosphate (PI4P) marker from the Golgi to the PM. Knockdown of ORP6 resulted in the same shift of the PI4P marker. Collectively, our data suggests that the recruitment of ORP6 to ER–PM contact sites is involved in the turnover of PI4P in cerebellar granular neurons.

60 APPLIED LIFE SCIENCES↗
DOE OSTI2016

Combinatorial chemical bath deposition of CdS contacts for chalcogenide photovoltaics

Contact layers play an important role in thin film solar cells, but new material development and optimization of its thickness is usually a long and tedious process. A high-throughput experimental approach has been used to accelerate the rate of research in photovoltaic (PV) light absorbers and transparent conductive electrodes, however the combinatorial research on contact layers is less common. Here, we report on the chemical bath deposition (CBD) of CdS thin films by combinatorial dip coating technique and apply these contact layers to Cu(In,Ga)Se 2 (CIGSe) and Cu 2 ZnSnSe 4 (CZTSe) light absorbers in PV devices. Combinatorial thickness steps of CdS thin films were achieved by removal of the substrate from the chemical bath, at regular intervals of time, and in equal distance increments. The trends in the photoconversion efficiency and in the spectral response of the PV devices as a function of thickness of CdS contacts were explained with the help of optical and morphological characterization of the CdS thin films. The maximum PV efficiency achieved for the combinatorial dip-coating CBD was similar to that for the PV devices processed using conventional CBD. Finally, the results of this study lead to the conclusion that combinatorial dip-coating can be used to accelerate the optimization of PV device performance of CdS and other candidate contact layers for a wide range of emerging absorbers.

14 SOLAR ENERGY↗
DOE OSTI2025

Contact with Electrically Conductive Inert Solids Alters Intrinsic Heterogeneous Brønsted Acid Catalysis

Interfacial electric fields at heterogeneous catalyst surfaces have been demonstrated to alter kinetics of liquid-phase reactions. In these systems, electric fields are generated from applying a potential to the catalyst through connection to a potentiostat or through electron transfer from redox-active species in solution. Here, we demonstrate that catalyst polarization can also occur by simply contacting electrically conductive inert solids, leading to the counterintuitive conclusion that a catalyst particle touching an inert solid can alter intrinsic reaction rates. Using dehydration of 1-methylcyclopentanol to 1-methylcyclopentene catalyzed by Brønsted-acidic carboxylic acid groups on carbon nanotubes as a proof-of-concept probe reaction, we show that catalyst contact with inert, thermally reduced carbon nanotubes leads to order-of-magnitude changes in reaction rate. Furthermore, we demonstrate that these contact-induced effects can also be observed under standard laboratory reaction conditions, where particle-to-particle contact in stirred catalyst powder suspensions is sufficient to demote rates by ∼8-fold. This work provides the foundation for a new method of reaction rate control, which could have implications whenever heterogeneous catalyst particles are in contact with inert materials for liquid-phase reactions in the presence of electrolyte.

Alcohols↗
DOE OSTI2025

Mobility and threshold voltage extraction in transistors with gate-voltage-dependent contact resistance

The mobility of emerging (e.g., two-dimensional, oxide, organic) semiconductors is commonly estimated from transistor current-voltage measurements. However, such devices often experience contact gating, i.e., electric fields from the gate modulate the contact resistance during measurements, which can lead conventional extraction techniques to estimate mobility incorrectly even by a factor >2. Although this error can be minimized by measuring transistors at high gate-source bias |V gs |, this regime is often inaccessible in emerging devices that suffer from high contact resistance or early gate dielectric breakdown. Here, we propose a method of extracting mobility in transistors with gate-dependent contact resistance that does not require operation at high |V gs |, enabling accurate mobility extraction even in emerging transistors with strong contact gating. Our approach relies on updating the transfer length method (TLM) and can achieve <10% error even in regimes where conventional techniques overestimate mobility by >2×

36 MATERIALS SCIENCE↗
DOE OSTI2013

Understanding of the contact of nanostructured thermoelectric n-type Bi 2 Te 2.7 Se 0.3 legs for power generation applications

Traditional processes of making contacts (metallization layer) onto bulk crystalline Bi 2 Te 3 -based materials do not work for nanostructured thermoelectric materials either because of weak bonding strength or an unstable contact interface at temperatures higher than 200 °C. Hot pressing of nickel contact onto nanostructured thermoelectric legs in a one-step process leads to strong bonding. However, such a process results in large contact resistance in n-type Ni/Bi 2 Te 2.7 Se 0.3 /Ni legs, although not in p-type Ni/Bi 0.4 Sb 1.6 Te 3 /Ni legs. A systematic study was carried out here to investigate the detailed reaction and diffusion at the interface of the nickel layer and n-type Bi 2 Te 3 -based thermoelectric material layer. We found that a p-type region formed within the n-type Bi 2 Te 2.7 Se 0.3 during hot pressing due to Te deficiency and Ni doping, leading to a large contact resistance.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2013

A new technique for direct traceability of contact thermometry Co-C eutectic cells to the ITS-90

The eutectic Co-C melting point is a promising system to serve as a thermometric fixed-point in the temperature range above 1084.62 °C (copper freezing point). During the last decade, LNE-Cnam has developed and characterized some fixed-point devices, based on eutectic Co-C alloy, for applications to contact and radiation thermometry. Above 962 °C, the ITS-90 is realized by radiation thermometry by the extrapolation from a Ag, Au or Cu fixed point using the Planck law for radiation. So the only way for assigning a temperature in the scale to a Co-C cell (∼1324 °C) is by radiation thermometry. An indirect method is commonly used to assign a temperature to a high-temperature fixed point (HTFP) cell designed for contact thermometry is to fill a pyrometric cell with the same mixture as the contact thermometry cell. In this case, the temperature assigned to the pyrometric cell is attributed to the contact cell. This paper describes a direct method allowing the determination of the melting temperature realized by a 'contact thermometry' Co-C cell by comparison to a 'radiation thermometry' Co-C cell whose melting temperature was assigned in accordance to the scale by extrapolation from the Cu point. In addition, the same Co-C cell is studied with a standard Pt/Pd thermocouple.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2013

Correlation between microstructure and temperature dependent electrical behavior of annealed Ti/Al/Ni/Au Ohmic contacts to AlGaN/GaN heterostructures

This letter reports on the temperature behavior of the structural and electrical properties of Ti/Al/Ni/Au contacts to AlGaN/GaN heterostructures. While Ohmic contacts formed at 750 °C showed a decreasing temperature behavior of the specific contact resistance ρ{sub C}, which was explained by a thermionic field emission mechanism, an increasing trend is observed in the contacts formed at 850 °C. In this case, ρ{sub C} exhibits a “metal-like” behavior, i.e., describable by a T{sup 1.8} dependence. The microstructural analysis of the interfacial region allowed to explain the results with the formation of metallic intrusions contacting directly the two dimensional electron gas.

36 MATERIALS SCIENCE↗
DOE OSTI2013

Electrical and microstructure analysis of nickel-based low-resistance ohmic contacts to n-GaSb

Ultra low resistance ohmic contacts are fabricated on n-GaSb grown by molecular beam epitaxy. Different doping concentrations and n-GaSb thicknesses are studied to understand the tunneling transport mechanism between the metal contacts and the semiconductor. Different contact metallization and anneal process windows are investigated to achieve optimal penetration depth of Au in GaSb for low resistances. The fabrication, electrical characterization, and microstructure analysis of the metal-semiconductor interfaces created during ohmic contact formation are discussed. The characterization techniques include cross-sectional transmission electron microscopy and energy dispersive spectroscopy. Specific transfer resistances down to 0.1 Ω mm and specific contact resistances of 1 × 10{sup −6} Ω cm{sup 2} are observed.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Neutron irradiation effects on metal-gallium nitride contacts

We have measured the effect of fast and thermal neutrons on GaN Schottky barriers and ohmic contacts using current–voltage and transmission line method electrical techniques, optical, atomic force and scanning electron microscopy morphological techniques, and X-ray photoemission spectroscopy chemical techniques. These studies reveal a 10{sup 15} n/cm{sup 2} neutron threshold for Schottky barrier ideality factor increases, a 10{sup 15} n/cm{sup 2} fast plus thermal neutron threshold for ohmic contact sheet and contact resistance increases, and 10{sup 16} n/cm{sup 2} neutron fluence threshold for major device degradation identified with thermally driven diffusion of Ga and N into the metal contacts and surface phase changes. These results demonstrate the need for protecting metal-GaN contacts in device applications subject to neutron radiation.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗