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At least 505 records · Page 28

High Precision Detection of Change in Intermediate Range Order of Amorphous Zirconia-Doped Tantala Thin Films Due to Annealing

Understanding the local atomic order in amorphous thin film coatings and how it relates to macroscopic performance factors, such as mechanical loss, provides an important path towards enabling the accelerated discovery and development of improved coatings. High precision x-ray scattering measurements of thin films of amorphous zirconia-doped tantala (ZrO 2 -Ta 2 O 5 ) show systematic changes in intermediate range order (IRO) as a function of postdeposition heat treatment (annealing). Atomic modeling captures and explains these changes, and shows that the material has building blocks of metal-centered polyhedra and the effect of annealing is to alter the connections between the polyhedra. The observed changes in IRO are associated with a shift in the ratio of corner-sharing to edge-sharing polyhedra. These changes correlate with changes in mechanical loss upon annealing, and suggest that the mechanical loss can be reduced by developing a material with a designed ratio of corner-sharing to edge-sharing polyhedra.

36 MATERIALS SCIENCE↗

Amorphous sulfide heterostructure precursors prepared by radio frequency sputtering

Two-dimensional sulfides and their heterostructures have emerged as potentially useful materials for technological applications. Controllable self-assembly of interleaved crystalline heterostructures from designed thin-film precursors has been demonstrated in selenide and telluride chemical systems, but not yet in sulfide chemistries. Preparing such amorphous sulfide heterostructure precursors is a necessary first step toward this goal. Here, deposition of thin-film amorphous precursors for layered sulfide heterostructures by RF sputtering is presented on the example of SnS-MoS 2 . Here, a calibration process specific to the mechanisms of RF sputtering from sulfide and disulfide compound targets is established. Precursor film structure and composition are confirmed via x-ray reflectivity and Rutherford backscattering measurements. Local nanostructure and composition are also examined by electron microscopy and electron energy loss spectroscopy.

14 SOLAR ENERGY↗

Optical functions of crystalline and amorphous TeO2

The optical functions of crystalline paratellurite (α-TeO2) and amorphous TeO2 were determined using several optical techniques: (1) standard spectroscopic two-modulator generalized ellipsometry (2-MGE) of paratellurite (200–850 nm, 6.2–1.46 eV), (2) near-normal-incidence two-modulator generalized ellipsometry microscopy (2-MGEM) of paratellurite (577 nm, 2.15 eV), (3) Mueller matrix transmission of paratellurite (320–798 nm, 3.87–1.55 eV), and (4) polarized transmission of paratellurite (323.6–334.3 nm, 3.83–3.71 eV). The 2-MGE measurements yielded highly accurate values of the dielectric functions and error estimates from 1.46 to 6.2 eV for both paratellurite and amorphous TeO2, whereas the polarization-dependent transmission yielded more accurate values of the absorption coefficient below the band edge of paratellurite. The 2-MGEM measured the diattenuation of paratellurite, which is related to the birefringence. Mueller matrix transmission measurements of paratellurite of a (001) cut crystal as a function of angle of incidence were used to determine both the birefringence and the rotary power as a function of photon energy.

Jellison Jr, Gerald [ORNL]↗

Amorphization in extreme deformation of the CrMnFeCoNi high-entropy alloy

Ever-harsher service conditions in the future will call for materials with increasing ability to undergo deformation without sustaining damage while retaining high strength. Prime candidates for these conditions are certain high-entropy alloys (HEAs), which have extraordinary work-hardening ability and toughness. By subjecting the equiatomic CrMnFeCoNi HEA to severe plastic deformation through swaging followed by either quasi-static compression or dynamic deformation in shear, we observe a dense structure comprising stacking faults, twins, transformation from the face-centered cubic to the hexagonal close-packed structure, and, of particular note, amorphization. The coordinated propagation of stacking faults and twins along {111} planes generates high-deformation regions, which can reorganize into hexagonal packets; when the defect density in these regions reaches a critical level, they generate islands of amorphous material. These regions can have outstanding mechanical properties, which provide additional strengthening and/or toughening mechanisms to enhance the capability of these alloys to withstand extreme loading conditions.

36 MATERIALS SCIENCE↗

Amorphization mechanism of SrIrO 3 electrocatalyst: How oxygen redox initiates ionic diffusion and structural reorganization

The use of renewable electricity to prepare materials and fuels from abundant molecules offers a tantalizing opportunity to address concerns over energy and materials sustainability. The oxygen evolution reaction (OER) is integral to nearly all material and fuel electrosyntheses. However, very little is known about the structural evolution of the OER electrocatalyst, especially the amorphous layer that forms from the crystalline structure. Here, we investigate the interfacial transformation of the SrIrO 3 OER electrocatalyst. The SrIrO 3 amorphization is initiated by the lattice oxygen redox, a step that allows Sr 2+ to diffuse and O 2− to reorganize the SrIrO 3 structure. This activation turns SrIrO 3 into a highly disordered Ir octahedral network with Ir square-planar motif. The final Sr y IrO x exhibits a greater degree of disorder than IrO x made from other processing methods. Our results demonstrate that the structural reorganization facilitated by coupled ionic diffusions is essential to the disordered structure of the SrIrO 3 electrocatalyst.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Short-Range Order in Amorphous and Crystalline Ferroelectric Hf{sub 0.5}Zr{sub 0.5}O{sub 2}

The microstructures of amorphous and polycrystalline ferroelectric Hf{sub 0.5}Zr{sub 0.5}O{sub 2} films are studied by X-ray spectroscopy and ellipsometry. EXAFS spectra demonstrate that the amorphous film consists of an “incompletely mixed” solid solution of metallic oxides HfO{sub 2} and ZrO{sub 2}. After rapid thermal annealing, the mixed Hf{sub 0.5}Zr{sub 0.5}O{sub 2} oxide films have a more ordered polycrystalline structure, and individual Hf and Zr monoxide islands are formed in the films. These islands are several nanometers in size and have a structure that is similar to the monoclinic structure of HfO{sub 2} and ZrO{sub 2}. The presence of the HfO{sub 2} and ZrO{sub 2} phases in the Hf{sub 0.5}Zr{sub 0.5}O{sub 2} films is also detected by ellipsometry.

36 MATERIALS SCIENCE↗

The Role of Transition Metals in Crystallization of Amorphous Al–Ni–Co–Yb Alloys

Al{sub 86}Ni{sub 4}Co{sub 4}Yb{sub 6} and Al{sub 86}Ni{sub 6}Co{sub 2}Yb{sub 6} metallic ribbons have been obtained by a standard planar flow method. According to X-ray diffraction data, the ribbons are amorphous. Their crystallization kinetics at different heating rates and resistivity has been determined. These alloys remain amorphous in a wide range of compositions, and the crystallization process depends significantly on transition metal concentration.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Characterization of high-purity germanium detectors with amorphous germanium contacts in cryogenic liquids

For the first time, planar high-purity germanium detectors with thin amorphous germanium contacts were successfully operated directly in liquid nitrogen and liquid argon in a cryostat at the Max-Planck-Institut für Physics in Munich. The detectors were fabricated at the Lawrence Berkeley National Laboratory and the University of South Dakota, using crystals grown at the University of South Dakota. They survived long-distance transportation and multiple thermal cycles in both cryogenic liquids and showed reasonable leakage currents and spectroscopic performance. Also discussed are the pros and cons of using thin amorphous semiconductor materials as an alternative contact technology in large-scale germanium experiments searching for physics beyond the Standard Model.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗

Amorphous topological matter: Theory and experiment

Topological phases of matter are ubiquitous in crystals, but less is known about their existence in amorphous systems, that lack long-range order. Here, we review the recent progress made on defining amorphous topological phases, their new phenomenology. We discuss the open questions in the field which promise to significantly enlarge the set of materials and synthetic systems benefiting from the robustness of topological matter.

36 MATERIALS SCIENCE↗

Ab initio study of the structure and properties of amorphous silicon hydride from accelerated molecular dynamics simulations

This paper presents a large-scale ab initio simulation study of amorphous silicon hydride (a-Si 1-x H x ) with an emphasis on the structure and properties of the material across a range of hydrogen concentration by combining accelerated molecular dynamics (MD) simulations with first-principles density-functional calculations. The accelerated MD scheme relied on classical metadynamics, which enabled the development of 2600+ high-quality structural models of a-Si 1-x H x , with system sizes ranging from 150 to 6,000 atoms and hydrogen concentrations vary from 6 to 20 at. %. The resulting amorphous networks were found to be completely free from any coordination defects and that they all exhibited a pristine band-gap in their electronic spectrum. The microstructural properties of hydrogen distributions were examined with great emphasis on the presence of isolated and clustered environments of hydrogen atoms. The results were compared with a suite of experimental data obtained from x-ray diffraction, infrared spectroscopy, spectroscopic ellipsometry and nuclear magnetic resonance studies.

36 MATERIALS SCIENCE↗

Growth of Highly Transparent Amorphous Carbon Films Using Beam Plasma Source

A single beam plasma source was used to deposit hydrogenated amorphous carbon (a-C:H) coatings at room temperature. Using methane source gas, a-C:H coatings were deposited at different radio frequency (RF) power to fabricate transparent and durable coatings. The film deposition rate was almost linearly proportional to the ion source power. Hydrogenated amorphous carbon films of ~100 nm thickness appeared to be highly transparent from UV to the infrared range with a transmittance of ~90% and optical bandgap of ~3.7 eV. The coatings also possess desirable mechanical properties with Young’s modulus of ~78 GPa and density of ~1.9 g/cm3. The combined material properties of high transmittance and high durability make the ion-source-deposited a-C:H coatings attractive for many applications.

36 MATERIALS SCIENCE↗

Phosphate Sorption Speciation and Precipitation Mechanisms on Amorphous Aluminum Hydroxide

Aluminum (Al) oxides are important adsorbents for phosphate in soils and sediments, and significantly limit Phosphate (P) mobility and bioavailability, but the speciation of surface-adsorbed phosphate on Al oxides remains poorly understood. Here, phosphate sorption speciation on amorphous Al hydroxide (AAH) was determined under pH 3–8 and P concentration of 0.03 mM–15 mM using various spectroscopic approaches, and phosphate precipitation mechanisms were discussed as well. AAH exhibits an extremely high phosphate sorption capacity, increasing from 3.80 mmol/g at pH 7 to 4.63 mmol/g at pH 3. Regardless of reaction pH, with increasing P sorption loading, the sorption mechanism transits from bidentate binuclear (BB) surface complexation with dP-Al of 3.12 Å to surface precipitation of analogous amorphous AlPO4 (AAP), possibly with ternary complexes, such as (≡Al-O) 2 -PO 2 -Al, as intermediate products. Additionally, the percentage of precipitated phosphate occurring in AAP linearly and positively correlates with P sorption loading. Compared to phosphate reaction with ferrihydrite, phosphate adsorbs and precipitates more readily on AAH due to the higher solubility product (K sp ) of AAH. The formation of AAP particles involves Al III release, which is promoted by phosphate adsorption, and its subsequent precipitation with phosphate at AAH surfaces or in the bulk solution.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Electron beam recrystallization of amorphous semiconductor materials

Nucleation and growth of crystalline films of silicon, germanium, and cadmium sulfide on substrates of plastic and glass were investigated. Amorphous films of germanium, silicon, and cadmium sulfide on amorphous substrates of glass and plastic were converted to the crystalline condition by electron bombardment.

Evans, J. C., Jr.↗

Electron tunnelling into amorphous germanium and silicon.

Measurements of tunnel conductance versus bias, capacitance versus bias, and internal photoemission were made in the systems aluminum-oxide-amorphous germanium and aluminium-oxide-amorphous silicon. A function was extracted which expresses the deviation of these systems from the aluminium-oxide-aluminium system.

Smith, C. W.↗

Low-temperature relaxations in amorphous polyolefins

The dynamic mechanical relaxation behavior of two series of amorphous polyolefins, was investigated from 4.2 K to the glass transition. Most of the polymers show a damping maximum or plateau in the 40 to 50 K region. Various mechanisms which have been suggested for cryogenic relaxations in amorphous polymers are considered as they might relate to the polyolefins. Two secondary relaxation processes above 80 K are distinguished. A relaxation at about 160 K (beta) in the second and third member of each series is associated with restricted blackbone motion. This process requires a certain degree of chain flexibility since it is not observed in the first member of each series. A lower temperature process (gamma) is observed in each member of the second series and is attributed to motion of the ethyl side group.

Hiltner, A.↗

Direct /TEM/ observation of the catalytic oxidation of amorphous carbon by Pd particles

The catalytic oxidation of amorphous carbon substrates by Pd particles is observed by in situ transmission electron microscopy. Various modes of selective attack of the carbon substrate in the immediate neighborhood of Pd particles are observed, which can be correlated with different degrees of particle mobility. Using amorphous substrates we have been able to demonstrate that the particle-substrate interaction is influenced by the structure of the particle. This has not previously been noted.

Moorhead, R. D.↗

Hydrogenated amorphous silicon deposited by ion-beam sputtering

Hydrogenated amorphous silicon films 1/2 to 1 micron thick were deposited on metal and glass substrates using ion-beam sputtering techniques. The 800 eV, 2 mA/sq cm beam was a mixture of argon and hydrogen ions. The argon sputtered silicon from a pure (7.6 cm) single crystal wafer, while the hydrogen combined with the sputtered material during the deposition. Hydrogen to argon pressure ratios and substrate temperatures were varied to minimize the defect state density in the amorphous silicon. Characterization was done by electrical resistivity, index of refraction and optical absorption of the films.

Lowe, V. E.↗

Optical conductivity of amorphous Ta and beta-Ta films

Tantalum films evaporated in high vacuum onto liquid-nitrogen-cooled substrates had an amorphous structure that persisted even after warming to room temperature. The optical conductivity (as well as the dc conductivity) of the amorphous films differed significantly from that of the bcc films.

Nestell, J. E., Jr.↗