Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “voltage limit”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 487 records · Page 27

Cycle life test and failure model of nickel-hydrogen cells

Six ampere hour individual pressure vessel nickel hydrogen cells were charge/discharge cycled to failure. Failure as used here is defined to occur when the end of discharge voltage degraded to 0.9 volts. They were cycled under a low earth orbit cycle regime to a deep depth of discharge (80 percent of rated ampere hour capacity). Both cell designs were fabricated by the same manufacturer and represent current state of the art. A failure model was advanced which suggests both cell designs have inadequate volume tolerance characteristics. The limited existing data base at a deep depth of discharge (DOD) was expanded. Two cells of each design were cycled. One COMSAT cell failed at cycle 1712 and the other failed at cycle 1875. For the Air Force/Hughes cells, one cell failed at cycle 2250 and the other failed at cycle 2638. All cells, of both designs, failed due to low end of discharge voltage (0.9 volts). No cell failed due to electrical shorts. After cell failure, three different reconditioning tests (deep discharge, physical reorientation, and open circuit voltage stand) were conducted on all cells of each design. A fourth reconditioning test (electrolyte addition) was conducted on one cell of each design. In addition post cycle cell teardown and failure analysis were performed on the one cell of each design which did not have electrolyte added after failure.

Smithrick, J. J.↗

Cycle life test and failure model of nickel-hydrogen cells

Six ampere hour individual pressure vessel nickel hydrogen cells were charge/discharge cycled to failure. Failure as used here is defined to occur when the end of discharge voltage degraded to 0.9 volts. They were cycled under a low earth orbit cycle regime to a deep depth of discharge (80 percent of rated ampere hour capacity). Both cell designs were fabricated by the same manufacturer and represent current state of the art. A failure model was advanced which suggests both cell designs have inadequate volume tolerance characteristics. The limited existing data base at a deep depth of discharge (DOD) was expanded. Two cells of each design were cycled. One COMSAT cell failed at cycle 1712 and the other failed at cycle 1875. For the Air Force/Hughes cells, one cell failed at cycle 2250 and the other failed at cycle 2638. All cells, of both designs, failed due to low end of discharge voltage (0.9 volts). No cell failed due to electrical shorts. After cell failure, three different reconditioning tests (deep discharge, physical reorientation, and open circuit voltage stand) were conducted on all cells of each design. A fourth reconditioning test (electrolyte addition) was conducted on one cell of each design. In addition post cycle cell teardown and failure analysis were performed on the one cell of each design which did not have electrolyte added after failure. Previously announced in STAR as N83-25038

Smithrick, J. J.↗

High voltage electrical insulation coating for refractory materials

Formula and process have been developed for coating refractory metal surfaces with high voltage electrical insulation for use at temperatures to 600 C. Coatings were specifically developed as an insulation for the surface of a perforated, molybdenum, ion-accelerator grid, but are not limited to this application.

Lent, W. E.↗

Modulator for tone and binary signals

Tones and binary information are transmitted as phase variations on a carrier wave of constant amplitude and frequency. The carrier and tones are applied to a balanced modulator for deriving an output signal including a pair of sidebands relative to the carrier. The carrier is phase modulated by a digital signal so that it is + or - 90 deg out of phase with the predetermined phase of the carrier. The carrier is combined in an algebraic summing device with the phase modulated signal and the balanced modulator output signal. The output of the algebraic summing device is hard limited to derive a constant amplitude and frequency signal having very narrow bandwidth requirements. At a receiver, the tones and binary data are detected with a phase locked loop having a voltage controlled oscillator driving a pair of orthogonal detection channels.

Mcchesney, J. R.↗

Step voltage analysis for the catenoid lightning protection system

The main objective of the proposed overhead Catenoid Lightning Protection System (CLPS) is personnel safety. To ensure working personnel's safety in lightning situations, it is necessary that the potential difference developed across a distance equal to a person's pace (step voltage) does not exceed a separately established safe voltage in order to avoid electrocution (ventricular fibrillation) of humans. Therefore, the first stage of the analytical effort is to calculate the open circuit step voltage. An impedance model is developed for this purpose. It takes into consideration the earth's complex impedance behavior and the transient nature of the lightning phenomenon. In the low frequency limit, this impedance model is shown to reduce to results similar to those predicted by the conventional resistor model in a DC analysis.

Chai, J. C.↗

Development of Low-Noise High Value Chromium Silicide Resistors for Cryogenic Detector Applications

Extremely high sensitivity detectors, such as silicon bolometers are required in many NASA missions for detection of photons from the x-ray to the far infrared regions. Typically, these detectors are cooled to well below the liquid helium (LHe) temperature (4.2 K) to achieve the maximum detection performance. As photoconductors, they are generally operated with a load resistor and a pre-set bias voltage, which is then coupled to the input gate of a source-follower Field Effect Transistor (FET) circuit. It is imperative that the detector system signal to noise performance be limited by the noise of the detector and not by the noise of the external components. The load resistor value is selected to optimize the detector performance. These two criteria tend to be contradictory in that these detectors require load resistors in the hundreds of megaohms, which leads to a higher Johnson noise. Additionally, the physical size of the resistor must be small for device integration as required by such missions as the NASA High Resolution Airborne Wide-Band Camera (HAWC) instrument and the Submillimeter High Angular Resolution Camera (SHARC) for the Caltech Submillimeter Observatory (CSO). We have designed, fabricated and characterized thin film resistors using a CrSi/TiW/Al metal system on optical quality quartz substrates. The resistor values range from 100 megaohms to over 650 megaohms and are Johnson noise limited at LHe temperatures. The resistor film is sputtered with a sheet resistance ranging from 300 ohms to 1600 ohms and the processing sequence developed for these devices allows for chemically fine tuning the sheet resistance in-situ. The wafer fabrication process was of sufficiently high yield (>80%) providing clusters of good resistors for integrated multiple detector channels, a very important feature in the assembly of these two instruments.

Jhabvala, Murzy↗

Characterizing Non-Uniformity of Performance of Thin-Film Solar Cells

Thin-film Solar Cells are being actively studied for terrestrial and space applications because of their potential to provide low-cost, lightweight, and flexible electric power system. Currently, thin-film solar cell performance is limited partially by the nonuniformity of performance that they typically exhibit. This nonuniformity of performance necessitates more detailed characterization techniques than the well-known macroscopic measurements such as current-voltage and efficiency. This project seeks to explore methods of characterization that take into account the spatial nonuniformity of thin-film solar cells. In this presentation we show results of electroluminescence images, short-circuit maps, and Kelvin Probe maps. All these mapping characterization and analysis tools show that the non-uniformities can correlated with device performance and efficiency.

Clark, Eric B.↗

Space Environment Factors Affecting the Performance of International Space Station Materials: The First Two Years of Flight Operations

In this paper, the natural and induced space environment factors affecting materials performance on ISS are described in some detail. The emphasis will be on ISS flight experience and the more significant design and development issues of the last two years. The intent is to identify and document the set of space environment factors, affecting materials, that are producing the largest impacts on the ISS flight hardware verification and acceptance process and on ISS flight operations. Orbital inclination (S1.6 ) and altitude (nominal3S0 km to 400 km altitude) determine the set of natural environment factors affecting the functional life of materials and subsystems on ISS. ISS operates in the F2 region of Earth's ionosphere in well-defined fluxes of atomic oxygen, other ionospheric plasma species, and solar UV, VUV, and x-ray radiation, as well as galactic cosmic rays, trapped radiation, and solar cosmic rays (1,2). The high latitude orbital environment also exposes external surfaces to significantly less well-defined or predictable fluxes of higher energy trapped electrons and auroral electrons (3 ,4). The micrometeoroid and orbital debris environment is an important determinant of spacecraft design and operations in any orbital inclination. Environment factors induced by ISS flight operations include ram-wake effects, magnetic induction voltages arising from flight through Earth's magnetic field, hypergolic thruster plume impingement from proximity operations of visiting vehicles, materials outgassing, venting and dumping of fluids, ISS thruster operations, as well as specific electrical power system interactions with the ionospheric plasma (S-7). ISS must fly in a very limited number of approved flight attitudes leading to location specific environmental exposures and extreme local thermal environments (8). ISS is a large vehicle and produces a deep wake structure from which both ionospheric plasma and neutrals (atomic oxygen) are largely excluded (9-11). At high latitude, the ISS wake may produce a spacecraft charging environment similar to that experienced by the DMSP and Freja satellites (800 to 100 km altitude polar orbits), especially during geo-magnetic disturbances (12-14). ISS is also subject to magnetic induction voltages (VxB L) on conducting structure, a result of high velocity flight through Earth's magnetic field. The magnitude of the magnetic induction voltage varies with location on ISS, as well as the relative orientation of the vehicle velocity vector and planetary magnetic field vector, leading to maximum induction voltages at high latitude (15). The space environment factors, natural and induced, that have had the largest impact on pre-launch ISS flight hardware verification and flight operations during the first two years of ISS flight operations are listed below and grouped according to the physical and chemical processes driving their interaction with ISS materials.

Koontz, Steven L.↗

Extending the field of view of KD/asterisk/P electrooptic modulators

The use of KD(asterisk)P as a polarization rotator has been limited to small field of view instruments. To investigate this limitation, the index ellipsoid is used to describe the optical properties of KD(asterisk)P and to calculate the retardance and fast axis as a function of the angle of incidence and voltage. Computed converging light patterns are then compared with observed intensity patterns formed by KD(asterisk)P. Finally, computed intensity patterns are used to demonstrate how the field of view of KD(asterisk)P can be increased when properly aligned with a positive uniaxial crystal.

West, E. A.↗

Safety Limitations Associated with Commercial 18650 Lithium-ion Cells

In the past decade, NASA-JSC battery group has carried out several tests on the safety of li-ion cells, modules and battery packs. The hazards associated with using commercial li-ion cells in high voltage and high capacity batteries have been determined to be different from those associated with the use of the same cells in low voltage, low capacity packs (less than 15 V and 60 Wh). Tests carried out included overcharge, overdischarge, external and internal short circuits with destructive physical analysis included in most cases. Chemical analysis, X-rays and in some cases CT scans were used for post-test analysis.

Jeevarajan, Judith A.↗

Advances in the theory and application of BSF cells

The characteristics and behavior of p(+), p solar cells were investigated. The p(+), p cells were made by the removal of the n(+) surface layers from n(+), p p(+), BSF cells followed by application of a suitable contact to the resultant p(+), p structures. The open circuit voltage of p(+), p cells was found to increase with increasing 'p' bulk resistivity. The measured open circuit velocity-temperature coefficients were positive and increased with increasing resistivity. An outline of prior limitations in solar cell design is presented, and the removal of these limitations through use of BSF effects is pointed out. The study of BSF effects made feasible production of very thin high efficiency silicon cells as well as high resistivity-high efficiency cells, two desirable types of silicon cells which were previously impossible to make.

Mandelkorn, J.↗

Performance of Solar Electric Powered Deep Space Missions Using Hall Thruster Propulsion

Power limited, low-thrust trajectories were assessed for missions to Jupiter, Saturn, and Neptune utilizing a single Venus Gravity Assist (VGA) and a primary propulsion system based on either a 3-kW high voltage Hall thruster, of the type being developed by the NASA In-Space Propulsion Technology Program, or an 8-kW variant of this thruster. These Hall thrusters operate with specific impulses below 3,000 seconds. A trade study was conducted to examine mission parameters that include: net delivered mass (NDM), beginning-of-life (BOL) solar array power, heliocentric transfer time, required launch vehicle, number of operating thrusters, and throttle profile. The top performing spacecraft configuration was defined to be the one that delivered the highest mass for a range of transfer times. In order to evaluate the potential future benefit of using next generation Hall thrusters as the primary propulsion system, comparisons were made with the advanced state-of-the-art (ASOA), 7-kW, 4,100 second NASA's Evolutionary Xenon Thruster (NEXT) for the same mission scenarios. For the BOL array powers considered in this study (less than 30 kW), the results show that the performance of the Hall thrusters, relative to NEXT, is largely dependant on the performance capability of the launch vehicle, and that at least a 10 percent performance gain, equating to at least an additional 200 kg dry mass at each target planet, is achieved over the higher specific impulse NEXT when launched on an Atlas 551.

Witzberger, Kevin E.↗

A Next Generation Air Monitor: Combining Orion and ISS Requirements for a Common Major Constituent Analyzer

The Major Constituent Analyzer (MCA) is a mass spectrometer-based instrument designed to provide critical monitoring of six major atmospheric constituents; nitrogen, oxygen, hydrogen, carbon dioxide, methane, and water vapor on-board the International Space Station. The analyzer has been an integral part of the Environmental Control and Life Support System (ECLSS) since the station went on-line. The Orion Air Monitor (OAM) was derived from the MCA and heavily optimized for reduced mass, lower power, faster water vapor response, and maintenance-free operation. The resulting OAM is approximately the size of the analyzer portion of the MCA, orbital-replacement unit 02 (ORU 02), while incorporating the functions of three other modules: Data Processing and Communication (ORU 01), Verification Gas Assembly (ORU 08), and Low Voltage Power Supply (ORU 04). The overlap in MCA and OAM requirements makes it possible to derive a common Air Monitor design that spans both applications while minimally impacting the weight and power limits imposed by the Multipurpose Crew Vehicle (MPCV). Benefits to ISS include the retirement of ORUs 01, 04, and 08, reducing up-mass and eliminating EEE parts obsolescence issues through the extended ISS mission phases. Benefits to MPCV and future deployed habitats under the Constellation program include greater interchangeability across ECLSS subsystems. This paper discusses the results of the requirements development study, where a superset of ISS and Orion air monitoring requirements were distilled; evaluated against increases in OAM functionality, mass, and power; and traded-off where possible using simple operating mode modifications. A system architecture and preliminary design addressing the common requirements will be presented.

Burchfield, David E.↗

FPGA Flash Memory High Speed Data Acquisition

The purpose of this research is to design and implement a VHDL ONFI Controller module for a Modular Instrumentation System. The goal of the Modular Instrumentation System will be to have a low power device that will store data and send the data at a low speed to a processor. The benefit of such a system will give an advantage over other purchased binary IP due to the capability of allowing NASA to re-use and modify the memory controller module. To accomplish the performance criteria of a low power system, an in house auxiliary board (Flash/ADC board), FPGA development kit, debug board, and modular instrumentation board will be jointly used for the data acquisition. The Flash/ADC board contains four, 1 MSPS, input channel signals and an Open NAND Flash memory module with an analog to digital converter. The ADC, data bits, and control line signals from the board are sent to an Microsemi/Actel FPGA development kit for VHDL programming of the flash memory WRITE, READ, READ STATUS, ERASE, and RESET operation waveforms using Libero software. The debug board will be used for verification of the analog input signal and be able to communicate via serial interface with the module instrumentation. The scope of the new controller module was to find and develop an ONFI controller with the debug board layout designed and completed for manufacture. Successful flash memory operation waveform test routines were completed, simulated, and tested to work on the FPGA board. Through connection of the Flash/ADC board with the FPGA, it was found that the device specifications were not being meet with Vdd reaching half of its voltage. Further testing showed that it was the manufactured Flash/ADC board that contained a misalignment with the ONFI memory module traces. The errors proved to be too great to fix in the time limit set for the project.

Gonzalez, April↗

Evaluation of Aluminum Polymer Capacitors for Space Applications

Layered aluminum polymer capacitors (APC) may be viable replacements to currently used chip tantalum capacitors due to their lower ESR, weight, and smaller size. So far, there is a lack of information regarding the reliability of these parts. Available technical literature is mostly related to the effect of humidity. Although APCs have a limited moisture resistance, it may be contained to the level sufficient for space applications. This work analyzes construction and characteristics of seven types of commercial APCs manufactured by four vendors and rated to voltages from 6.3 to 35 V were analyzed. Their reliability under environmental stresses and highly accelerated life tests was assessed in the range of temperatures and voltages to determine reliability acceleration factors. For this purpose, characteristics of the parts, including breakdown voltages, the level of anomalous charging currents (ACC), capacitance, DF, ESR and leakage currents were measured in the process of storage at high-temperatures (from 100 to 150 °C) and high humidity at 85 °C. Monitored highly accelerated life tests have been carried out at temperatures of 85 °C and 125 °C and voltages varying from 1.2 to 1.9 times the rated voltage. Degradation processes and reliability of APCs have been compared to polymer tantalum capacitors.

Alexander A Teverovsky↗

Silicon device performance measurements to support temperature range enhancement

Testing of the metal oxide semiconductor (MOS)-controlled thyristor (MCT) has uncovered a failure mechanism at elevated temperature. The failure appears to be due to breakdown of the gate oxide. Further testing is underway to verify the failure mode. Higher current level inverters were built to demonstrate 200 C operation of the N-MOSFET's and insulated-gate-bipolar transistors (IGBT's) and for life testing. One MOSFET failed early in testing. The origin of this failure is being studied. No IGBT's have failed. A prototype 28-to-42 V converter was built and is being tested at room temperature. The control loop is being finalized. Temperature stable, high value (10 micro-F) capacitors appear to be the limiting factor in the design at this time. In this application, the efficiency will be lower for the IGBT version due to the large V sub(cesat) (3.5-4 V) compared to the input voltage of 28 V. The MOSFET version should have higher efficiency; however, the MOSFET does not appear to be as robust at 200 C. Both versions are built for comparison.

Bromstead, James↗

Efficiency Analysis of a High-Specific Impulse Hall Thruster

Performance and plasma measurements of the high-specific impulse NASA-173Mv2 Hall thruster were analyzed using a phenomenological performance model that accounts for a partially-ionized plasma containing multiply-charged ions. Between discharge voltages of 300 to 900 V, the results showed that although the net decrease of efficiency due to multiply-charged ions was only 1.5 to 3.0 percent, the effects of multiply-charged ions on the ion and electron currents could not be neglected. Between 300 to 900 V, the increase of the discharge current was attributed to the increasing fraction of multiply-charged ions, while the maximum deviation of the electron current from its average value was only +5/-14 percent. These findings revealed how efficient operation at high-specific impulse was enabled through the regulation of the electron current with the applied magnetic field. Between 300 to 900 V, the voltage utilization ranged from 89 to 97 percent, the mass utilization from 86 to 90 percent, and the current utilization from 77 to 81 percent. Therefore, the anode efficiency was largely determined by the current utilization. The electron Hall parameter was nearly constant with voltage, decreasing from an average of 210 at 300 V to an average of 160 between 400 to 900 V. These results confirmed our claim that efficient operation can be achieved only over a limited range of Hall parameters.

Jacobson, David↗

Single Junction InGaP/GaAs Solar Cells Grown on Si Substrates using SiGe Buffer Layers

Single junction InGaP/GaAs solar cells displaying high efficiency and record high open circuit voltage values have been grown by metalorganic chemical vapor deposition on Ge/graded SiGe/Si substrates. Open circuit voltages as high as 980 mV under AM0 conditions have been verified to result from a single GaAs junction, with no evidence of Ge-related sub-cell photoresponse. Current AM0 efficiencies of close to 16% have been measured for a large number of small area cells, whose performance is limited by non-fundamental current losses due to significant surface reflection resulting from greater than 10% front surface metal coverage and wafer handling during the growth sequence for these prototype cells. It is shown that at the material quality currently achieved for GaAs grown on Ge/SiGe/Si substrates, namely a 10 nanosecond minority carrier lifetime that results from complete elimination of anti-phase domains and maintaining a threading dislocation density of approximately 8 x 10(exp 5) per square centimeter, 19-20% AM0 single junction GaAs cells are imminent. Experiments show that the high performance is not degraded for larger area cells, with identical open circuit voltages and higher short circuit current (due to reduced front metal coverage) values being demonstrated, indicating that large area scaling is possible in the near term. Comparison to a simple model indicates that the voltage output of these GaAs on Si cells follows ideal behavior expected for lattice mismatched devices, demonstrating that unaccounted for defects and issues that have plagued other methods to epitaxially integrate III-V cells with Si are resolved using SiGe buffers and proper GaAs nucleation methods. These early results already show the enormous and realistic potential of the virtual SiGe substrate approach for generating high efficiency, lightweight and strong III-V solar cells.

Ringel, S. A.↗