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At least 487 records · Page 27

In Situ Study of Resistive Switching in a Nitride‐Based Memristive Device

Abstract Resistive switching (RS) devices with ultra‐low‐voltage threshold and reliable switching repeatability exhibits great potential applications in energy‐efficient data storage and neuromorphic computing. Understanding switching mechanisms at nanoscale is critical to design RS devices with improved performance. In this work, a lamella memristive device using focused ion beam (FIB) method based on the metal/TiO x /TiN/Si structure device is fabricated. In situ transmission electron microscopy (TEM) and current–voltage ( I–V ) characteristic demonstrate that the lamella device shows a volatile RS behavior with a threshold switching at ≈ ± 0.4 V. In situ scanning transmission electron microscopy (STEM) experiments with electron energy loss spectroscopy (EELS) reveal that the charge carriers such as oxygen vacancies migrate under positive/negative DC bias and modulate Schottky barriers at the top and bottom metal/semiconductor interfaces. The RS mechanism of the lamella device is based on the Schottky barriers modulation and Joule heating assisted electric field triggered thermal runaway (FTTR) occurred at the metal/semiconductor interfaces. The fundamental insights gained from this study presents a perspective on interface‐type RS devices processing and opens up new technological opportunities of fabricating ultra‐low‐energy memristive devices.

36 MATERIALS SCIENCE↗

Near Room Temperature Solvothermal Growth of Ferroelectric CsPbBr 3 Nanoplatelets with Ultralow Dark Current

CsPbBr 3 exhibits outstanding optoelectronic properties and thermal stability, making it a coveted material for detectors, light-emitting diodes, and solar cells. Despite observations of ferroelectricity in CsPbBr 3 quantum dots, synthesizing bulk ferroelectric CsPbBr 3 crystals has remained elusive, hindering its potential in next-generation optoelectronic devices like optical switches and ferroelectric photovoltaics. Here, a breakthrough is reported: a novel solvothermal technique enabling the growth of ferroelectric CsPbBr 3 nanoplatelets with lateral dimensions in the tens of micrometers. This represents a significant step toward achieving large-area ferroelectric CsPbBr 3 crystals. Unlike traditional methods, this approach allows for growth and crystallization of CsPbBr 3 in alcohol solutions by enhancing precursor solubility. Further this study confirms the ferroelectric nature of these nanoplatelets using second harmonic generation, electrical characterizations, and piezoresponse force microscopy. This work paves the way for utilizing ferroelectric CsPbBr 3 in novel optoelectronic devices, significantly expanding the potential of this material and opening doors for further exploration in this exciting field.

25 ENERGY STORAGE↗

In-situ resonant band engineering of solution-processed semiconductors generates high performance n-type thermoelectric nano-inks

Thermoelectric devices possess enormous potential to reshape the global energy landscape by converting waste heat into electricity, yet their commercial implementation has been limited by their high cost to output power ratio. No single “champion” thermoelectric material exists due to a broad range of material-dependent thermal and electrical property optimization challenges. While the advent of nanostructuring provided a general design paradigm for reducing material thermal conductivities, there exists no analogous strategy for homogeneous, precise doping of materials. Here, we demonstrate a nanoscale interface-engineering approach that harnesses the large chemically accessible surface areas of nanomaterials to yield massive, finely-controlled, and stable changes in the Seebeck coefficient, switching a poor nonconventional p- type thermoelectric material, tellurium, into a robust n -type material exhibiting stable properties over months of testing. These remodeled, n -type nanowires display extremely high power factors (~500 µW m -1 K -2 ) that are orders of magnitude higher than their bulk p -type counterparts.

42 ENGINEERING↗

Design and validation of a cold load for characterization of CMB-S4 detectors

We present the design and validation of a variable temperature cryogenic blackbody source, hereinafter called a cold load, that will be used to characterize detectors to be deployed by CMB-S4, the next-generation ground-based cosmic microwave background (CMB) experiment. Although cold loads have been used for detector characterization by previous CMB experiments, this cold load has three novel design features: (1) the ability to operate from the 1 K stage of a dilution refrigerator (DR), (2) a 3He gas-gap heat switch to reduce cooling time, and (3) the ability to couple small external optical signals to measure detector optical time constants under low optical loading. The efficacy of this design was validated using a 150 GHz detector array previously deployed by the Spider experiment. Here, thermal tests showed that the cold load can be heated to temperatures required for characterizing CMB-S4’s detectors without significantly impacting the temperatures of other cryogenic stages when mounted to the DR’s 1 K stage. Additionally, optical tests demonstrated that external signals can be coupled to a detector array through the cold load without imparting a significant optical load on the detectors, which will enable measurements of the CMB-S4 detectors’ optical time constants.

47 OTHER INSTRUMENTATION↗

Exploring the Light-induced Dynamics in Solvated Metallogrid Complexes with Femtosecond Pulses Across the Electromagnetic Spectrum

Oligonuclear complexes of d 4 -d 7 transition metal ion centers that undergo spin-switching have long been developed for their practical role in molecular electronics. Recently, they also have appeared as promising photochemical reactants demonstrating improved stability. However, the lack of knowledge about their photophysical properties in the solution phase compared to their mononuclear congeners is currently hampering their inclusion into advanced light-driven reactions. In the present study, the ultrafast photoinduced dynamics in a solvated [2x2] iron(II) metallogrid complex are characterized by combining transient optical, infrared absorption and X-ray emission spectroscopic measurements on the femtosecond timescale. The analysis is supported by DFT calculations. The photocycle can be described in terms of intra-site transitions, where the Fe II in the low-spin (LS) state are independently photoexcited. The Franck-Condon state decays via the formation of a vibrationally-hot high-spin (HS) state that displays coherent behavior within a few picoseconds and thermalizes within tens of picosecond to yield a metastable HS state living for several hundreds of nanoseconds. Additionally, systematic comparison with the closely related mononuclear complex [Fe(terpy) 2 ] 2+ reveals that nuclearity has a profound impact on the photoinduced dynamics. Finally, this work provides guidelines for expanding the integration of oligonuclear complexes into new photoconversion schemes that may be triggered by ultrafast spin-switching.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

A Smart Silicon Carbide Power Module With Pulse Width Modulation Over Wi-Fi and Wireless Power Transfer-Enabled Gate Driver, Featuring Onboard State of Health Estimator and High-Voltage Scaling Capabilities

A wide range of utility applications require controllable switches with features such as high-voltage blocking and high-current carrying capacity, especially at high pulse width modulation (PWM) frequency. Low- and medium-voltage utility applications such as motor drives and flexible AC transmission systems as well as solid state transformers could also benefit from a low-cost high-voltage switching module. Wide-bandgap semiconductors such as silicon carbide (SiC) and gallium nitride (GaN) metal oxide semiconductor field effect transistors (MOSFETs) are considered to be the present and next-generation device choices, although they have limitations. For relatively high-voltage applications with demanding thermal management, SiC is still the only choice, and GaN dominates the low-voltage regime. This manuscript proposes a new half-bridge power MOSFET module that is suitable for conventional H-bridge of multilevel configurations used in high-voltage applications. Constructed from bare SiC dies, this half-bridge module takes advantage of (1) optimized MOSFET placement inside the module, (2) customized heat exchanger, manifold, and cooling, (3) integrated gate driver module with pulse width modulation (PWM) over wi-fi to eliminate the need for low-voltage signals, (4) wireless power transfer (WPT)-enabled gate driver and other ancillary circuits, (5) and the option to incorporate an onboard state-of-health (SOH) estimator module. The entire architecture has been designed and built at the National Renewable Energy Laboratory (NREL) in Golden, CO.

Ga2O3 devices↗

Optical-Gating of Spin-based Quantum States (Final Report)

This project developed a generalizable strategy for optical control of spin-based quantum states through the Photoisomerization-Induced Spin–Charge Excited State (PISCES) process, in which a photochromic spirooxazine ligand bound to an electronically bistable metal complex enables reversible, room-temperature optical switching of spin states in both dilute matrices and the solid state. A multidisciplinary team integrated synthesis, spectroscopy, theory, and surface science to establish design principles for opto-spintronic quantum materials. Systematic structure–property studies across four spirooxazine series revealed that donor–π–acceptor interactions govern thermal isomerization, which proceeds via a rotational pathway. Pulsed EPR measurements demonstrated millisecond-scale coherence times in cobalt-dioxolene-spirooxazine complexes, establishing their promise as optically addressable molecular qubits; the approach was extended to Cu(II), Ni(II), and lanthanide complexes, including optical modulation of zero-field splittings and clock transitions. Two-dimensional IR spectroscopy resolved picosecond ground-state population exchange dynamics, while ab initio calculations elucidated photoisomerization mechanisms and parametrized Hamiltonians for spin relaxation and decoherence. Toward device integration, the team fabricated 2D polymer scaffolds for covalent qubit organization, developed tip-enhanced Raman imaging of molecular monolayers, and demonstrated optical gating of gate voltage in spirooxazine-graphene field-effect transistors. The project produced numerous publications, dissertations, and presentations, and trained over 30 researchers.

2D polymers↗

Staphylococcus aureus FtsZ and PBP4 bind to the conformationally dynamic N-terminal domain of GpsB

In the Firmicutes phylum, GpsB is a membrane associated protein that coordinates peptidoglycan synthesis with cell growth and division. Although GpsB has been studied in several bacteria, the structure, function, and interactome of Staphylococcus aureus GpsB is largely uncharacterized. To address this knowledge gap, we solved the crystal structure of the N-terminal domain of S. aureus GpsB, which adopts an atypical, asymmetric dimer, and demonstrates major conformational flexibility that can be mapped to a hinge region formed by a three-residue insertion exclusive to Staphylococci. When this three-residue insertion is excised, its thermal stability increases, and the mutant no longer produces a previously reported lethal phenotype when overexpressed in Bacillus subtilis. In S. aureus, we show that these hinge mutants are less functional and speculate that the conformational flexibility imparted by the hinge region may serve as a dynamic switch to fine-tune the function of the GpsB complex and/or to promote interaction with its various partners. Furthermore, we provide the first biochemical, biophysical, and crystallographic evidence that the N-terminal domain of GpsB binds not only PBP4, but also FtsZ, through a conserved recognition motif located on their C-termini, thus coupling peptidoglycan synthesis to cell division. Taken together, the unique structure of S. aureus GpsB and its direct interaction with FtsZ/PBP4 provide deeper insight into the central role of GpsB in S. aureus cell division.

59 BASIC BIOLOGICAL SCIENCES↗

Development and fabrication of an augmented power transistor

The development of device design and processing techniques for the fabrication of an augmented power transistor capable of fast switching and high voltage power conversion is discussed. The major device goals sustaining voltages in the range of 800 to 1000 V at 80 A and 50 A, respectively, at a gain of 14. The transistor switching rise and fall times were both to have been less than 0.5 microseconds. The development of a passivating glass technique to shield the device high voltage junction from moisture and ionic contaminants is discussed as well as the development of an isolated package that separates the thermal and electrical interfaces. A new method was found to alloy the transistors to the molybdenum disc at a relatively low temperature. The measured electrical performance compares well with the predicted optimum design specified in the original proposed design. A 40 mm diameter transistor was fabricated with seven times the emitter area of the earlier 23 mm diameter device.

Geisler, M. J.↗

NASA Tech Briefs, February 2005

Topics discussed include: Instrumentation for Sensitive Gas Measurements; Apparatus for Testing Flat Specimens of Thermal Insulation; Quadrupole Ion Mass Spectrometer for Masses of 2 to 50 Da; Miniature Laser Doppler Velocimeter for Measuring Wall Shear; Coherent Laser Instrument Would Measure Range and Velocity; Printed Microinductors for Flexible Substrates; Digital Receiver for Microwave Radiometry; Printed Antennas Made Reconfigurable by Use of MEMS Switches; Traffic-Light-Preemption Vehicle-Transponder Software Module; Intersection-Controller Software Module; Central-Monitor Software Module; Estimating Effects of Multipath Propagation on GPS Signals; Parallel Adaptive Mesh Refinement Library; Predicting Noise From Aircraft Turbine-Engine Combustors; Generating Animated Displays of Spacecraft Orbits; Diagnosis and Prognosis of Weapon Systems; Training Software in Artificial-Intelligence Computing Techniques; APGEN Version 5.0; Single-Command Approach and Instrument Placement by a Robot on a Target; Three-Dimensional Audio Client Library; Isogrid Membranes for Precise, Singly Curved Reflectors; Nickel-Tin Electrode Materials for Nonaqueous Li-Ion Cells; Photocatalytic Coats in Glass Drinking-Water Bottles; Fast Laser Shutters With Low Vibratory Disturbances; Series-Connected Buck Boost Regulators; Space Physics Data Facility Web Services; Split-Resonator, Integrated-Post Vibratory Microgyroscope; Blended Buffet-Load-Alleviation System for Fighter Airplane; Gifford-McMahon/Joule-Thomson Refrigerator Cools to 2.5 K; High-Temperature, High-Load-Capacity Radial Magnetic Bearing; Fabrication of Spherical Reflectors in Outer Space; Automated Rapid Prototyping of 3D Ceramic Parts; Tissue Engineering Using Transfected Growth-Factor Genes; Automation of Vapor-Diffusion Growth of Protein Crystals; Atom Skimmers and Atom Lasers Utilizing Them; Gears Based on Carbon Nanotubes; Patched Off-Axis Bending/Twisting Actuators for Thin Mirrors; and Improving Control in a Joule-Thomson Refrigerator.

Source record↗

A minimum propellant solution to an orbit-to-orbit transfer using a low thrust propulsion system

The Space Exploration Initiative is considering the use of low thrust (nuclear electric, solar electric) and intermediate thrust (nuclear thermal) propulsion systems for transfer to Mars and back. Due to the duration of such a mission, a low thrust minimum-fuel solution is of interest; a savings of fuel can be substantial if the propulsion system is allowed to be turned off and back on. This switching of the propulsion system helps distinguish the minimal-fuel problem from the well-known minimum-time problem. Optimal orbit transfers are also of interest to the development of a guidance system for orbital maneuvering vehicles which will be needed, for example, to deliver cargoes to the Space Station Freedom. The problem of optimizing trajectories for an orbit-to-orbit transfer with minimum-fuel expenditure using a low thrust propulsion system is addressed.

Cobb, Shannon S.↗

Magnetoelastic standing waves induced in UO 2 by microsecond magnetic field pulses

Significance UO 2 is of particular interest due to its use as a nuclear fuel, its unusually poor thermal conductivity, and its uniquely strong magnetoelastic properties characterized by a linear coupling between strain and magnetization. We clearly observe mechanical standing waves and elastic resonances in a single crystal, induced by microsecond magnetic field pulses. The phase and amplitude of the mechanical resonances are modulated by the piezomagnetic switching behavior, offering a sensitive probe for otherwise hard to detect magnetic dynamics in UO 2 . We highlight the importance of magnetic domains in the attenuation of the mechanical resonances and the robustness of the antiferromagnetic state in UO 2 against externally applied magnetic fields to 150 T.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗

Electric field control of magnon spin currents in an antiferromagnetic insulator

Pure spin currents can be generated via thermal excitations of magnons. These magnon spin currents serve as carriers of information in insulating materials, and controlling them using electrical means may enable energy efficient information processing. Here, we demonstrate electric field control of magnon spin currents in the antiferromagnetic insulator Cr 2 O 3 . We show that the thermally driven magnon spin currents reveal a spin-flop transition in thin-film Cr 2 O 3 . Crucially, this spin-flop can be turned on or off by applying an electric field across the thickness of the film. Using this tunability, we demonstrate electric field–induced switching of the polarization of magnon spin currents by varying only a gate voltage while at a fixed magnetic field. We propose a model considering an electric field–dependent spin-flop transition, arising from a change in sublattice magnetizations via a magnetoelectric coupling. These results provide a different approach toward controlling magnon spin current in antiferromagnets.

36 MATERIALS SCIENCE↗

Proton switching molecular magnetoelectricity

Abstract The convergence of proton conduction and multiferroics is generating a compelling opportunity to achieve strong magnetoelectric coupling and magneto-ionics, offering a versatile platform to realize molecular magnetoelectrics. Here we describe machine learning coupled with additive manufacturing to accelerate the design strategy for hydrogen-bonded multiferroic macromolecules accompanied by strong proton dependence of magnetic properties. The proton switching magnetoelectricity occurs in three-dimensional molecular heterogeneous solids. It consists of a molecular magnet network as proton reservoir to modulate ferroelectric polarization, while molecular ferroelectrics charging proton transfer to reversibly manipulate magnetism. The magnetoelectric coupling induces a reversible 29% magnetization control at ferroelectric phase transition with a broad thermal hysteresis width of 160 K (192 K to 352 K), while a room-temperature reversible magnetic modulation is realized at a low electric field stimulus of 1 kV cm −1 . The findings of electrostatic proton transfer provide a pathway of proton mediated magnetization control in hierarchical molecular multiferroics.

36 MATERIALS SCIENCE↗

Three-Phase LCC-LCC Compensated 50-kW Wireless Charging System with Non-Zero Interphase Coupling

In this paper, an LCC-LCC compensated 50 kW 3phase (3φ) wireless charging system with nonzero interphase mutual inductance is demonstrated. The 3φ-LCC compensation is designed considering a nonzero mutual-inductance among the phase-coils to meet resonance criteria, balance voltages and currents of the resonant tank components, achieve desired voltage gain, and ensure the zero-voltage switching (ZVS) operation. An experimental prototype of the 3φ-LCC-LCC compensation circuit is built for a 50 kW bipolar coil-based 3φ wireless charging system. The prototype system was tested at rated 50 kW power for evaluating the efficiency, ZVS operation, electric and magnetic field emissions, and thermal characteristics. The experimental results show 94.3% dc-to-dc efficiency and only 4.4 μT rms magnetic field emission at the rated 50 kW output power.

Mohammad, Mostak↗

Transmission Electron Microscopy Study on the Effect of Thermal and Electrical Stimuli on Ge2Te3 Based Memristor Devices

Memristor devices fabricated using the chalcogenide Ge 2 Te 3 phase change thin films in a metal-insulator-metal structure are characterized using thermal and electrical stimuli in this study. Once the thermal and electrical stimuli are applied, cross-sectional transmission electron microscopy (TEM) and X-ray energy-dispersive spectroscopy (XEDS) analyses are performed to determine structural and compositional changes in the devices. Electrical measurements on these devices showed a need for increasing compliance current between cycles to initiate switching from low resistance state (LRS) to high resistance state (HRS). The measured resistance in HRS also exhibited a steady decrease with increase in the compliance current. High resolution TEM studies on devices in HRS showed the presence of residual crystalline phase at the top-electrode/dielectric interface, which may explain the observed dependence on compliance current. XEDS study revealed diffusion related processes at dielectric-electrode interface characterized, by the separation of Ge 2 Te 3 into Ge- and Te- enriched interfacial layers. This was also accompanied by spikes in O level at these regions. Furthermore, in-situ heating experiments on as-grown thin films revealed a deleterious effect of Ti adhesive layer, wherein the in-diffusion of Ti leads to further degradation of the dielectric layer. This experimental physics-based study shows that the large HRS/LRS ratio below the current compliance limit of 1 mA and the ability to control the HRS and LRS by varying the compliance current are attractive for memristor and neuromorphic computing applications.

Shallcross, Austin↗

Environmental Evaluation of Gas Switching Reforming for Low Carbon Hydrogen: A Power-to-X Study

Gas Switching Reforming for hydrogen production (GSR-H2) offers a promising pathway for producing low-carbon hydrogen at scale, with significant implications for Power-to-X (PtX) systems that rely on clean hydrogen as a feedstock for synthetic fuels and chemicals. GSR-H2 integrates inherent carbon capture and thermal self-sufficiency, positioning it as an efficient alternative to conventional steam methane reforming (SMR), proton exchange membrane (PEM) electrolysis, and chemical looping reforming (CLR). Unlike SMR, GSR-H2 avoids external natural gas combustion by leveraging exothermic redox cycles to generate process steam and recover electricity internally. Its innovative reactor design consolidates all reforming stages within a single reactor cluster, eliminating the need for solid circulation found in CLR, thereby reducing capital costs and improving system reliability and scalability. This presentation describes the first environmental life cycle assessment (LCA) of GSR-H2, evaluating its environmental performance across U.S. grid and renewable energy scenarios. In a renewables-powered configuration, GSR-H2 achieves a global warming potential (GWP) of 2.77 kg CO2 equivalent per kg H2, substantially lower than SMR (10.4 kg) and competitive with PEM electrolysis (1.85 kg) and CLR (1.84 kg). Results across additional impact categories, including air quality and water use, support GSR-H2’s role as a complementary hydrogen source in PtX applications. Its reduced environmental burden, thermal integration, and simplified scale-up potential make GSR-H2 a viable contributor to net-zero PtX systems, particularly where renewable energy is abundant and electricity-intensive hydrogen production faces economic or infrastructure constraints.

03 NATURAL GAS↗

Epitaxial Growth of Large-Scale 2D CrTe 2 Films on Amorphous Silicon Wafers With Low Thermal Budget

2D van der Waals (vdW) magnets open landmark horizons in the development of innovative spintronic device architectures. However, their fabrication with large scale poses challenges due to high synthesis temperatures (>500 °C) and difficulties in integrating them with standard complementary metal-oxide semiconductor (CMOS) technology on amorphous substrates such as silicon oxide (SiO 2 ) and silicon nitride (SiN x ). Here, a seeded growth technique for crystallizing CrTe 2 films on amorphous SiN x /Si and SiO 2 /Si substrates with a low thermal budget is presented. This fabrication process optimizes large-scale, granular atomic layers on amorphous substrates, yielding a substantial coercivity of 11.5 kilo-oersted, attributed to weak intergranular exchange coupling. Field-driven Néel-type stripe domain dynamics explain the amplified coercivity. Moreover, the granular CrTe 2 devices on Si wafers display significantly enhanced magnetoresistance, more than doubling that of single-crystalline counterparts. Current-assisted magnetization switching, enabled by a substantial spin–orbit torque with a large spin Hall angle (85) and spin Hall conductivity (1.02 × 10 7 ℏ/2e Ω -1 m -1 ), is also demonstrated. These observations underscore the proficiency in manipulating crystallinity within integrated 2D magnetic films on Si wafers, paving the way for large-scale batch manufacturing of practical magnetoelectronic and spintronic devices, heralding a new era of technological innovation.

2D magnetic thin films↗