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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 487 records · Page 27
All sourcesNASA NTRSDOE OSTI
NASA NTRS1971

A thin-shock-layer solution for nonequilibrium, inviscid hypersonic flows in earth, Martian, and Venusian atmospheres

An approximate inverse solution is presented for the nonequilibrium flow in the inviscid shock layer about a vehicle in hypersonic flight. The method is based upon a thin-shock-layer approximation and has the advantage of being applicable to both subsonic and supersonic regions of the shock layer. The relative simplicity of the method makes it ideally suited for programming on a digital computer with a significant reduction in storage capacity and computing time required by other more exact methods. Comparison of nonequilibrium solutions for an air mixture obtained by the present method is made with solutions obtained by two other methods. Additional cases are presented for entry of spherical nose cones into representative Venusian and Martian atmospheres. A digital computer program written in FORTRAN language is presented that permits an arbitrary gas mixture to be employed in the solution. The effects of vibration, dissociation, recombination, electronic excitation, and ionization are included in the program.

Grose, W. L.↗
DOE OSTI2020

Back-Surface Passivation of CdTe Solar Cells Using Solution-Processed Oxidized Aluminum

Although back-surface passivation plays an important role in high-efficiency photovoltaics, it has not yet been definitively demonstrated for CdTe. Here, we present a solution-based process, which achieves passivation and improved electrical performance when very small amounts of oxidized Al 3+ species are deposited at the back surface of CdTe devices. The open circuit voltage (V oc ) is increased and the fill factor (FF) and photoconversion efficiency (PCE) are optimized when the total amount added corresponds to ~1 monolayer, suggesting that the passivation is surface specific. Addition of further Al 3+ species, present in a sparse alumina-like layer, causes the FF and PCE to drop as the interface layer becomes blocking to current flow. The optimized deposit increases the average baseline PCE for both Cu-free devices and devices where Cu is present as a dopant. The greatest improvement is found when the Al 3+ species are deposited prior to the CdCl 2 activation step and Cu is employed. In this case, the best-cell efficiency was improved from 12.6 to 14.4%. Furthermore, time-resolved photoluminescence measurements at the back surface and quantum efficiency measurements performed at the maximum power point indicate that the performance enhancement is due to a reduction in the interface recombination current at the back surface.

14 SOLAR ENERGY↗
DOE OSTI2021

Polymer Solar Cells with 18.74% Efficiency: From Bulk Heterojunction to Interdigitated Bulk Heterojunction

The most popular approach to fabricating organic solar cells (OSCs) is solution processing a mixture of donor (D) and acceptor (A) materials into an active layer with a bulk heterojunction (BHJ) nanostructure. In this work, it is demonstrated that the interdigitated heterojunction (IHJ) is a more suitable nanostructure of the active layer for high-performance OSCs whereas it is a long standing challenge to realize well-defined IHJ structures. Here, a facile and versatile sequential solution processing method is developed to produce an IHJ nanostructure with power conversion efficiency reaching 18.74% (18.10% for BHJ the counterpart) by fabricating a donor film with nanopores created by a wax additive, sequentially casting the acceptor on top of infiltrating the nanopores. Compared to the BHJ, the IHJ structure with an interpillar distance within the exciton diffusion length can afford a large bulk D/A interface for efficient exciton dissociation with a minimized charge recombination while free electrons and holes can transport to the respective electrodes through more straightforward pathways, thus enhance performance. Furthermore, the D or A phase in the IHJ device contacts with only one electrode, which can prevent shunting between the anode and cathode and facilitate the industrial mass production of OSCs.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Ammonolysis Under NH 3 –Limiting Conditions as a Pathway to Improved LaTiO 2 N Water Splitting Photoanodes

LaTiO 2 N is a promising intermediate band gap semiconductor for the water splitting reaction, a pathway to hydrogen fuel from solar energy. However, the photoelectrochemical (PEC) activity of the material is hindered by defects, particularly Ti(III) species, which promote photocarrier recombination. These defects are formed during the high-temperature ammonolysis reaction. Here we show that improved LaTiO 2 N materials can be synthesized under NH 3 -limiting conditions by introducing N 2 to lower the NH 3 partial pressure to0.13atm.This reduces the Ti(III) defect density in the material from 6.06 × 10 16 to ∼4.61 × 10 15 cm −3 , by a factor of 13, based on electron paramagnetic resonance (EPR) spectroscopy. Any remaining Ti(III) defects are localized at the LaTiO 2 N surface, according to X-ray photoelectron spectroscopy (XPS), due to the formation of a depletion layer in the semico. Optical absorption spectra of the improved LaTiO 2 N reveal a blue-shifted band gap absorption edge and a suppressed sub-band gap absorption. Defect removal also reduces a sub-band gap surface photovoltage feature visible in the 1.0 atm reference material. The improved LaTiO 2 N supports a 1.57 mA cm −2 water oxidation photocurrent at 1.23 V RHE under simulated sunlight conditions, and an enhanced quantum efficiency of 4.5% (400 nm) for photocatalytic oxygen evolution from aqueous silver nitrate solution. Stable PEC operation is observed for over 55 min. This confirms that ammonolysis under NH 3 -limiting conditions improves the solar energy conversion properties of LaTiO 2 N. The ability to control metal ion defects in oxynitrides by varying the ammonia partial pressure during ammonolysis might be generally useful for the preparation of metal nitrides and oxynitrides.

defects↗
DOE OSTI2022

1D model of tokamak scrape-off layer and divertor plasmas: Dimensionless parameters and the results of numerical simulations

Solutions of a 1D model of the scrape-off layer and a divertor plasma in a tokamak are analyzed on the basis of dimensionless parameters governing the physics of both plasma and neutral transport and atomic physics processes. Numerical simulations based on fluid plasma and Monte Carlo neutral modeling confirm earlier results obtained with simplified analytic considerations and numerical simulations performed with fluid neutral description and demonstrate bifurcation of plasma parameters. Further, these simulations also confirm that the major physical reasons for the rollover of the plasma flux to the target, which is the key feature of the phenomenon of divertor plasma detachment, are the impurity radiation loss and plasma recombination. It is suggested that simulations of the edge plasma based on dimensionless parameters provide a powerful tool for checking the consistency of the physics incorporated in existing complex 2D codes used for edge plasma modeling.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2022

Alicyclobacillus mali FL18 as a Novel Source of Glycosyl Hydrolases: Characterization of a New Thermophilic β-Xylosidase Tolerant to Monosaccharides

A thermo-acidophilic bacterium, Alicyclobacillus mali FL18, was isolated from a hot spring of Pisciarelli, near Naples, Italy; following genome analysis, a novel putative β-xylosidase, AmβXyl, belonging to the glycosyl hydrolase (GH) family 3 was identified. A synthetic gene was produced, cloned in pET-30a(+), and expressed in Escherichia coli BL21 (DE3) RIL. The purified recombinant protein, which showed a dimeric structure, had optimal catalytic activity at 80 °C and pH 5.6, exhibiting 60% of its activity after 2 h at 50 °C and displaying high stability (more than 80%) at pH 5.0–8.0 after 16 h. AmβXyl is mainly active on both para-nitrophenyl-β-D-xylopyranoside (K M 0.52 mM, k cat 1606 s -1 , and k cat /K M 3088.46 mM -1 ·s -1 ) and para-nitrophenyl-α-L-arabinofuranoside (K M 10.56 mM, k cat 2395.8 s -1 , and k cat /K M 226.87 mM -1 ·s -1 ). Thin-layer chromatography showed its ability to convert xylooligomers (xylobiose and xylotriose) into xylose, confirming that AmβXyl is a true β-xylosidase. Furthermore, no inhibitory effect on enzymatic activity by metal ions, detergents, or EDTA was observed except for 5 mM Cu 2+ . AmβXyl showed an excellent tolerance to organic solvents; in particular, the enzyme increased its activity at high concentrations (30%) of organic solvents such as ethanol, methanol, and DMSO. Lastly, the enzyme showed not only a good tolerance to inhibition by xylose, arabinose, and glucose, but was activated by 0.75 M xylose and up to 1.5 M by both arabinose and glucose. The high tolerance to organic solvents and monosaccharides together with other characteristics reported above suggests that AmβXyl may have several applications in many industrial fields.

59 BASIC BIOLOGICAL SCIENCES↗
NASA NTRS1994

The peculiar type II supernova 1993J in M81: Transition to the nebular phase

We present optical spectra of the bright, peculiar Type II supernova 1993J in M81 spanning the first 14 months of its existence, revealing its transition to the nebular phase. Unlike the case in normal Type II supernovae, during the first 2-10 months the H-alpha emission line gradually becomes less prominent relative to other features such as (O I) lambda lambda 6300, 6364 and (Ca II) lambda lambda 7291, 7324, as we had predicted based on early-time (tau less than or approximately equal to 2 months) spectra. The nebular spectrum resembles those of the Type Ib/Ic supernovae 1985F and 1987M, although weak H-alpha emission is easily visible even at late times in SN 1993J. At tau = 8 months a close similarity is found with the spectrum of SN 1987K, the only other Type II supernova known to have undergone such a metamorphosis. The emission lines are considerably broader than those of normal Type II supernovae at comparable phases, consistent with the progenitor having lost a majority of its hydrogen envelope prior to exploding. Consequently, there is now little doubt that Type Ib, and probably Type Ic, supernovae result from core collapse in stripped, massive stars; models of the chemical evolution of galaxies in which these subtypes are ascribed to exploding white dwarfs must be appropriately modified. Although all of the emission lines in spectra of SN 1993J fade roughly exponentially for a considerable time, the fading of H-alpha begins to slow down at tau approximately = 8 months, and in the interval tau = 10-14 months its flux is constant, or even slightly rising in the wings of the line. This behavior, together with the box-like shape and great breadth (full width at half maximum (FWHM) approximately = 17 000 km/s) of the line profile, suggests that the H-alpha emission is being produced by the high-velocity outer layer of hydrogen ejecta interacting with circumstellar gas released by the progenitor prior to its explosion. A similar phenomenon has previously been seen at later phases in several Type II supernovae, most notably SN 1980K. Bumps (FWHM approximately = 1000 km/s, amplitude approximately = 20%) in the H-alpha profile are probably indicative of Rayleigh-Taylor instabilities in the cool gas behind the reverse shock. A very narrow component (unresolved, FWHM less than or approximately equal to 200 km/s) of H-alpha at the symmetric velocity of SN 1993J may instead be produced by a superposed H II region, or perhaps by recombination in a large circumstellar shell or ring that was ionized during the first few hours after outburst. In the near future the spectrum of SN 1993J should become increasingly dominated by broad H-alpha emission.

Filippenko, Alexei V.↗
NASA NTRS1972

Development of ion implanted gallium arsenide transistors

Techniques were developed for creating bipolar microwave transistors in GaAs by ion implantation doping. The electrical properties of doped layers produced by the implantation of the light ions Be, Mg, and S were studied. Be, Mg, and S are suitable for forming the relatively deep base-collector junction at low ion energies. The electrical characteristics of ion-implanted diodes of both the mesa and planar types were determined. Some n-p-n planar transistor structures were fabricated by implantation of Mg to form the base regions and Si to form the emitters. These devices were found to have reasonably good base-collector and emitter-base junctions, but the current gain beta was small. The low was attributable to radiative recombination in the base region, which was extremely wide.

Hunsperger, R.↗
DOE OSTI2024

Microstructural Passivation of Patterned Al 2 O 3 Back Contacts on CdS/CdTe Solar Cells

Abstract Patterned aluminum oxide (Al 2 O 3 ) back contact on cadmium telluride (CdTe) solar cells can effectively mitigate the loss of the majority carriers while retaining the passivation benefits for minority carriers. This study investigates the impact of the point‐contact geometry on cell performance, where the spacing of the microholes is systematically varied at a constant microhole diameter (≈16 µm). Microhole arrays are created on an evaporated Al 2 O 3 layer (≈30 nm) on CdTe using laser‐beam lithography and selective wet etching processes. Comparative analysis indicates a significant decrease in fill factor (FF) and short‐circuit current ( I SC ) when the contact fraction falls below 30%, likely due to the Al 2 O 3 barrier impeding majority carriers. Above this fraction, FF and I SC are comparable to those of baseline CdTe cells without Al 2 O 3 . Open‐circuit voltage ( V OC ) shows a gradual decrease as Al 2 O 3 coverage is reduced but exhibits a slight increase (<15 mV) when the contact fraction exceeds 30%. Cathodoluminescence (CL) characterization reveals that significantly improved radiative recombination occurs within the CdTe grain bulk with Al 2 O 3 , whereas this effect on grain boundaries is minimal. The findings imply complex local carrier dynamics in the patterned back‐contact region, closely tied to the microstructural properties of CdTe‐based solar cells.

Roy, Etee Kawna↗
DOE OSTI2021

Identification of dislocation-related and point-defects in III-As layers for silicon photonics applications

Abstract The aim of this paper is to identify, analyze and compare the defects present in III-As, as a function of dislocation density, and as a function of the presence/absence of quantum dots (QDs). Such materials are of fundamental importance for the development of lasers and photodiodes for silicon photonics. The study is based on an extensive deep-level transient spectroscopy investigation, carried out on GaAs pin diodes grown on Si and on GaAs (that differ in the dislocation density), with and without embedded QDs. The original results described in this paper demonstrate that: (a) we were able to identify four different defects within the device grown on Si (three electron and one hole traps) and one defect (hole trap) in the device on GaAs, common to both samples; (b) all the majority carrier traps identified are located near midgap, i.e. are efficient non-radiative recombination centers; (c) such defects are absent (or non-detectable) in the sample grown on GaAs substrate, having a very low dislocation density; (d) the presence of QDs does not result in additional defects within the semiconductor material; (e) the analysis of the capture kinetics revealed that two of the identified traps are related to point defects, whereas the other two traps can be associated with point defects located near a dislocation; (f) a comparison with previous reports indicate that the detected traps are related to native III-As defects, or to oxygen-related complexes.

Physics↗
NASA NTRS1981

Meteoric ion production near Jupiter

Meteoric ion layer formation within the Jovian atmosphere is examined with attention to metallic ion production in the lower ionosphere. The Fe(+) impact ionization rate within the Jovian atmosphere peaks above the mesopause with a magnitude of approximately 0.5 cu cm/sec and is much less than the ambient ionosphere photoionization rates near the late afternoon Pioneer 10 ionosphere occultation. Charge exchange of the ablated neutral Fe atoms with ambient ions can result in an Fe(+) production rate of about 10 cu cm/sec. Ignoring transport, steady state Fe(+) density maxima of about 10,000 or 1,000,000 cu cm can be maintained when Fe(+) loss is through radiative association or radiative recombination respectively. Even if an estimated lower limit to the incident meteoroid flux is used based on a meteoroid spatial density which does not vary with distance from the sun, the corresponding Fe(+) peak densities are 1,000 and 500,000 cu cm, respectively. Meteoric ion densities may thus be important in the Jovian lower ionosphere.

Grebowsky, J. M.↗
NASA NTRS1996

Assessment of thermochemical nonequilibrium and slip effects for Orbital Reentry Experiment (OREX)

Results are provided from a viscous shock layer (VSL) analysis of the reentry flowfield around the forebody of the Japanese Orbital Reentry Experiment (OREX) vehicle. This vehicle is a 50 deg. spherically blunted cone with a nose radius of 1.35 m and a base diameter of 3.4 m. Calculations are done for the OREX trajectory from 105 to 48.4 km altitude range. A 7-species chemical model is found adequate for the flowfield analysis. However, for altitudes greater than 84 km, the low density effects (such as thermal nonequilibrium and slip) are to be implemented for good agreement between the predictions and flight inferred heat-transfer rate data. Further, at altitudes lower than 84 km, a finite surface recombination probability is to be employed in place of a non-catalytic surface for better comparison between the calculations and data. VSL results are also compared with the direct simulation Monte Carlo (DSMC) predictions at high altitudes (greater than 80 km) and the electron number density data for three altitudes in the OREX trajectory. Overall, there is a good comparison between the flight data and calculated results. With the ongoing refinements in data extraction procedures, the OREX data should prove valuable for validating theoretical models employed in flowfield codes for calculation of reacting-gas flowfields.

Gupta, Roop N.↗
NASA NTRS1974

Viscous reacting flows with wall slip and catalysis applied to spheres in arc jets and flight

The influence of wall slip and catalytic atom-recombination on the flow field and wall heat flux are calculated for high altitude flight and arc jet flow conditions. Boundary equations, which include velocity slip, temperature jump, and wall catalytic atom recombination, are coupled to the viscous reacting multicomponent Navier-Stokes equations. These equations are solved using a time-dependent finite difference technique applied to spheres in an arc jet flow (Reynolds number of 550) and a high altitude flight case representative of the Space Shuttle Orbiter (Reynolds number of 450). The results indicate that catalysis strongly influences the temperature jump, but not the velocity slip. Slip increases the atom fraction and temperature at both the wall and the flow field. Likewise, the shock stand-off distance, the wall heat flux, and friction coefficient are increased over the nonslip cases. The reacting gas calculations confirm the chemically frozen nature of the shock layer in arc jet flows.

Scott, C. D.↗
DOE OSTI2021

Reconfiguring the band-edge states of photovoltaic perovskites by conjugated organic cations

The band edges of metal-halide perovskites with a general chemical structure of ABX 3 (A, usually a monovalent organic cation; B, a divalent cation; and X, a halide anion) are constructed mainly of the orbitals from B and X sites. Hence, the structural and compositional varieties of the inorganic B–X framework are primarily responsible for regulating their electronic properties, whereas A-site cations are thought to only help stabilize the lattice and not to directly contribute to near-edge states. We report a π-conjugation–induced extension of electronic states of A-site cations that affects perovskite frontier orbitals. The π-conjugated pyrene-containing A-site cations electronically contribute to the surface band edges and influence the carrier dynamics, with a properly tailored intercalation distance between layers of the inorganic framework. Lastly, the ethylammonium pyrene increased hole mobilities, improved power conversion efficiencies relative to that of a reference perovskite, and enhanced device stability.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Nanometer-Scale Imaging of Inhomogeneous Active Charge Carriers in Arsenic-Doped CdTe Thin Films

We report nanometer-scale imaging of active carrier distribution of As-doped CdTe films by scanning capacitance microscopy (SCM). We developed SCM sample preparation for CdTe by ion-milling followed by thermal processing. The nanometer-resolution carrier delineation for CdTe was validated by imaging on a CdTe cross-section sample made by a molecular beam epitaxy layer stack with As-doping concentrations of 10^15 ~10^18 /cm 3 . We found that the carrier distribution in As-doped films was significantly nonuniform, with inhomogeneity ranging from sub-um to a few um and concentration variation of one order of magnitude (low 10^16 to low 10^17 /cm 3 ). This nonuniformity is distributed randomly, independent of grain structure and grain boundary (GB). We used Kelvin probe force microscopy (KPFM) and cathodoluminescence (CL) to further map the surface potential and radiative illumination on the same area as the SCM image. Higher potential and lower CL intensity were found on GBs but not on SCM contrast, illustrating positive GB charging and GB recombination but not GB-distinguished doping. The overall KPFM potential image is in rough agreement with the SCM carrier distribution, in terms of Fermi-level position relative to the bandgap edge - thus resulting in the band-edge potential fluctuation. Nonuniform carrier concentration, potential fluctuation, and defect recombination can all together cause the Voc deficit of the As-doped CdTe device.

14 SOLAR ENERGY↗
NASA NTRS2009

Complementary Barrier Infrared Detector

The complementary barrier infrared detector (CBIRD) is designed to eliminate the major dark current sources in the superlattice infrared detector. The concept can also be applied to bulk semiconductor- based infrared detectors. CBIRD uses two different types of specially designed barriers: an electron barrier that blocks electrons but not holes, and a hole barrier that blocks holes but not electrons. The CBIRD structure consists of an n-contact, a hole barrier, an absorber, an electron barrier, and a p-contact. The barriers are placed at the contact-absorber junctions where, in a conventional p-i-n detector structure, there normally are depletion regions that produce generation-recombination (GR) dark currents due to Shockley-Read- Hall (SRH) processes. The wider-bandgap complementary barriers suppress G-R dark current. The barriers also block diffusion dark currents generated in the diffusion wings in the neutral regions. In addition, the wider gap barriers serve to reduce tunneling dark currents. In the case of a superlattice-based absorber, the superlattice itself can be designed to suppress dark currents due to Auger processes. At the same time, the barriers actually help to enhance the collection of photo-generated carriers by deflecting the photo-carriers that are diffusing in the wrong direction (i.e., away from collectors) and redirecting them toward the collecting contacts. The contact layers are made from materials with narrower bandgaps than the barriers. This allows good ohmic contacts to be made, resulting in lower contact resistances. Previously, THALES Research and Technology (France) demonstrated detectors with bulk InAsSb (specifically InAs0.91Sb0.09) absorber lattice-matched to GaSb substrates. The absorber is surrounded by two wider bandgap layers designed to minimize impedance to photocurrent flow. The wide bandgap materials also serve as contacts. The cutoff wavelength of the InAsSb absorber is fixed. CBIRD may be considered as a modified version of the THALES double heterostructure (DH) p-i-n device, but with even wider bandgap barriers inserted at the contact layer/absorber layer interfaces. It is designed to work with either bulk semiconductors or superlattices as the absorber material. The superlattice bandgap can be adjusted to match the desired absorption cutoff wavelength. This infrared detector has the potential of high-sensitivity operation at higher operating temperatures. This would reduce cooling requirements, thereby reducing the power, mass, and volume of the equipment and allowing an increased mission science return.

Ting, David Z.↗
DOE OSTI2023

Inference of main ion particle transport coefficients with experimentally constrained neutral ionization during edge localized mode recovery on DIII-D

Abstract The plasma and neutral density dynamics after an edge localized mode are investigated and utilized to infer the plasma transport coefficients for the density pedestal. The Lyman-Alpha Measurement Apparatus (LLAMA) diagnostic provides sub-millisecond profile measurements of the ionization and neutral density and shows significant poloidal asymmetries in both. Exploiting the absolute calibration of the LLAMA diagnostic allows quantitative comparison to the electron and main ion density profiles determined by charge-exchange recombination, Thomson scattering and interferometry. Separation of diffusion and convection contributions to the density pedestal transport are investigated through flux gradient methods and time-dependent forward modeling with Bayesian inference by adaptation of the Aurora transport code and IMPRAD framework to main ion particle transport. Both methods suggest time-dependent transport coefficients and are consistent with an inward particle pinch on the order of 1 m s −1 and diffusion coefficient of 0.05 m 2 s −1 in the steep density gradient region of the pedestal. While it is possible to recreate the experimentally observed phenomena with no pinch in the pedestal, low diffusion in the core and high outward convection in the near scrape-off layer are required without an inward pedestal pinch.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2023

CdTe-based thin film photovoltaics: Recent advances, current challenges and future prospects

Cadmium telluride (CdTe)-based cells have emerged as the leading commercialized thin film photovoltaic technology and has intrinsically better temperature coefficients, energy yield, and degradation rates than Si technologies. More than 30 GW peak (GWp) of CdTe-based modules are installed worldwide, multiple companies are in production, modules are shipping at up to 18.6% efficiency, and lab cell efficiency is above 22%. We review developments in the science and technology that have occurred over approximately the past decade. These achievements were enabled by manufacturing innovations and scaling module production, as well as maximizing photocurrent through window layer optimization and alloyed CdSe x Te 1-x (CST) absorbers. Improved chlorine passivation processes, film microstructure, and serendipitous Se defect passivation significantly increased minority carrier lifetime. Efficiencies >22% have been realized for both Cu and As doped CST-based cells. The path to further efficiency gains hinges primarily on increasing open circuit voltage (V oc ) and fill factor (FF) through innovations in materials, fabrication methods, and device stacks. Replacing the longstanding Cu doping with As doping is resulting in better module stability and is being translated to large-scale production. To realize 25% efficiency and >1 V V oc , research and development is needed to increase the minority carrier lifetime beyond 100 ns, reduce grain boundary and interface recombination, and tailor band diagrams at the front and back interfaces. Many of these goals have been realized separately however combining them together using scalable manufacturing approaches has been elusive to date. We review these achievements and outstanding opportunities for this remarkable photovoltaic technology.

14 SOLAR ENERGY↗