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At least 487 records · Page 27
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Giant optical second- and third-order nonlinearities at a telecom wavelength

A material platform that excels in both optical second- and third-order nonlinearities at a telecom wavelength is theoretically and experimentally demonstrated. In this TiN-based coupled metallic quantum well structure, electronic subbands are engineered to support doubly resonant inter-subband transitions for an exceptionally high second-order nonlinearity and provide single-photon transitions for a remarkable third-order nonlinearity within the 1400–1600 nm bandwidth. The second-order susceptibility χ (2) reaches 2840 pm/V at 1440 nm, while the Kerr coefficient n 2 arrives at 2.8 × 10 −10 cm 2 /W at 1460 nm. The achievement of simultaneous strong second- and third-order nonlinearities in one material at a telecom wavelength creates opportunities for multi-functional advanced applications in the field of nonlinear optics.

Chen, Ching-Fu (ORCID:0000000262510722)↗
NASA NTRS2003

Development of a 1K x 1K GaAs QWIP Far IR Imaging Array

In the on-going evolution of GaAs Quantum Well Infrared Photodetectors (QWIPs) we have developed a 1,024 x 1,024 (1K x1K), 8.4-9 microns infrared focal plane array (FPA). This 1 megapixel detector array is a hybrid using the Rockwell TCM 8050 silicon readout integrated circuit (ROIC) bump bonded to a GaAs QWIP array fabricated jointly by engineers at the Goddard Space Flight Center (GSFC) and the Army Research Laboratory (ARL). The finished hybrid is thinned at the Jet Propulsion Lab. Prior to this development the largest format array was a 512 x 640 FPA. We have integrated the 1K x 1K array into an imaging camera system and performed tests over the 40K-90K temperature range achieving BLIP performance at an operating temperature of 76K (f/2 camera system). The GaAs array is relatively easy to fabricate once the superlattice structure of the quantum wells has been defined and grown. The overall arrays costs are currently dominated by the costs associated with the silicon readout since the GaAs array fabrication is based on high yield, well-established GaAs processing capabilities. In this paper we will present the first results of our 1K x 1K QWIP array development including fabrication methodology, test data and our imaging results.

Jhabvala, M.↗
NASA NTRS1988

Optical Backplane Interconnect Technology (OBIT)

We describe and analyze a novel approach to implementing an Optical Backplane Interconnect Technology (OBIT) that is capable of optically connecting any row of a 32x32 backplane array to any row of a second 32x32 array. Each backplane array is formed monolithically on a wafer. The technology is based on the use of Grating Surface Emitting (GSE) waveguides formed on a wafer containing quantum-well and separate confinement waveguide layers. These layers are used for transverse guiding, gain, modulation, detection, and for the formation of wavelength tunable distributed-Bragg reflector lasers. The required surface structures are formed photolithographically. The GSE waveguides act as efficient antennae that radiate light at angles selected by tuning the wavelength of the lasers. The same waveguides may be used as the receiving antennae when the array is used in the receiving mode. Thus, wavelength tuning is used to direct each row of the transmitting array to the desired row of the receiving array. In summary: The optical backplane array will have the following characteristics: Any row of a 32x32 GSE array may be optically connected to any row of a second 32x32 array. Only one switch decision is required to switch 32 parallel connections to any one of 32 positions. Each monolithic array can be used as both transmitter and receiver by switching the bias on the quantum-well switch-detectors. Separate transmitting and receiving structures could be provided for duplex operation. For a bit error rate of 10 sup 9 at 100-MHz data rate, a required laser power of 12 mW is calculated based on an estimated total optical loss of 40 dB.

Hammer, J. M.↗
DOE OSTI2021

Graded Buffer Bragg Reflectors with High Reflectivity and Transparency for Metamorphic Optoelectronics

A graded buffer Bragg reflector (GBBR) is a bifunctional device component that provides the reflection of a distributed Bragg reflector and the adjustable lattice constant of a compositionally graded buffer. Prior work showed that these properties can be combined with low threading dislocation density and high reflectivity. Here, we design and demonstrate complex GBBRs for specific metamorphic solar cell applications. We design buffers that provide (1) high reflectivity over a narrow bandwidth, for quantum well solar cells, (2) reflectivity over a wide bandwidth, for optically thin solar cells, and (3) low sidelobe reflection, for multijunction devices that demand low out-of-band reflection. Apodized and triple GBBRs are demonstrated, and transparency is always considered, requiring designs with carefully engineered material combinations. A GBBR with a reflection of 99% is demonstrated, as well as a triple GBBR that has over 80% reflection for 100?nm of the spectrum around 800?nm. We also analyze potential deviations in a baseline GBBR from that of a perfect DBR using transmission electron microscopy to analyze imperfections in the material and modeling to analyze the impact of imperfect refractive index data for lattice-mismatched AlGaInAs. Minimal crosshatch roughness and unintentional thickness variation occur throughout the buffer, which likely influences reflection slightly. Small deviations between the calculated AlGaInAs and utilized AlGaAs refractive index exist, giving methods for future GBBR improvement. While the GBBR designs are intended for metamorphic solar cells, the broad and high reflection may also be useful for other optoelectronic devices such as light-emitting diodes or lasers.

41 EE - Solar Energy Technologies Office (EE-4S)↗
NASA NTRS1999

Photonic Switching Devices Using Light Bullets

A unique ultra-fast, all-optical switching device or switch is made with readily available, relatively inexpensive, highly nonlinear optical materials. which includes highly nonlinear optical glasses, semiconductor crystals and/or multiple quantum well semiconductor materials. At the specified wavelengths. these optical materials have a sufficiently negative group velocity dispersion and high nonlinear index of refraction to support stable light bullets. The light bullets counter-propagate through, and interact within the waveguide to selectively change each others' directions of propagation into predetermined channels. In one embodiment, the switch utilizes a rectangularly planar slab waveguide. and further includes two central channels and a plurality of lateral channels for guiding the light bullets into and out of the waveguide. An advantage of the present all-optical switching device lies in its practical use of light bullets, thus preventing the degeneration of the pulses due to dispersion and diffraction at the front and back of the pulses. Another advantage of the switching device is the relative insensitivity of the collision process to the time difference in which the counter-propagating pulses enter the waveguide. since. contrary to conventional co-propagating spatial solitons, the relative phase of the colliding pulses does not affect the interaction of these pulses. Yet another feature of the present all-optical switching device is the selection of the light pulse parameters which enables the generation of light bullets in nonlinear optical materials. including highly nonlinear optical glasses and semiconductor materials such as semiconductor crystals and/or multiple quantum well semiconductor materials.

Goorjian, Peter M.↗
DOE OSTI2022

Low Forward Voltage III-Nitride Red Micro-Light-Emitting Diodes on a Strain Relaxed Template with an InGaN Decomposition Layer

In this study, III-nitride red micro-light-emitting diodes (µLEDs) with ultralow forward voltage are demonstrated on a strain relaxed template. The forward voltage ranges between 2.00 V and 2.05 V at 20 A/cm 2 for device dimensions from 5 x 5 to 100 x 100 µm 2 . The µLEDs emit at 692 nm at 5 A/cm 2 and 637 nm at 100 A/cm 2 , corresponding to a blueshift of 55 nm due to the screening of the internal electric field in the quantum wells. The maximum external quantum efficiency and wall-plug efficiency of µLEDs are 0.31% and 0.21%, respectively. This suggests that efficient III-nitride red µLEDs can be realized with further material optimizations.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Revisiting excitation gaps in the fractional quantum Hall effect

Recent systematic measurements of the quantum well width dependence of the excitation gaps of fractional quantum Hall states in high mobility samples open the possibility of a better quantitative understanding of this important issue. Here we present what we believe to be accurate theoretical gaps including the effects of finite width and Landau level (LL) mixing. While theory captures the width dependence, there still remains a deviation between the calculated and the measured gaps, presumably caused by disorder. It is customary to model the experimental gaps of the n/(2n ± 1) states as Δ n/(2n+1) = Ce 2 /[(2n ± 1)ϵl]-Γ, where ϵ is the dielectric constant of the background semiconductor and l is the magnetic length; the first term is interpreted as the cyclotron energy of composite fermions and Γ as a disorder-induced broadening of composite-fermion LLs. Fitting the gaps for various fractional quantum Hall states, we find that Γ can be nonzero even in the absence of disorder.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Single-photon emission from two-dimensional perovskites channeled through low-energy edge states

Two-dimensional perovskites, an emerging family of van der Waals materials with an innate quantum-well structure, exhibit remarkable optical characteristics and compositional tunability. However, their potential as a source for quantum emitters remains unexplored. Here, we investigate low-energy edge states unique to two-dimensional perovskites using comprehensive photoluminescence imaging and spectroscopy, to further leverage them towards uncovering quantum emitters. In contrast to above-bandgap excitation, spatially localized single-photon emitters are realized through sub-bandgap energy excitation at the edges in exfoliated single crystals. Specifically, the sub-bandgap excitation facilitates efficient access to deeply confined states within the bandgap, as charge carriers can channel through low-energy edge states while inhibiting competing processes. Furthermore, we demonstrate single-photon emitters from artificially created edges via strain as well as from two-dimensional perovskites with different quantum-well thicknesses. Our findings provide promising opportunities in the development of two-dimensional quantum emitters, where two-dimensional perovskites may provide added functionalities with versatility in material design, fabrication, and scalability.

Materials for optics↗
NASA NTRS2003

Collective Excitations in InAs Well Intersubband Transitions

Intersubband transitions in semiconductor quantum well are studied using a density matrix theory that goes beyond the Hartree-Fock approximation by including the full second order electron-electron scattering terms in the polarization equation for the first time. Even though the spectral features remain qualitatively similar to the results obtained with dephasing rate approximation, significant quantitative changes result from such a more detailed treatment of dephasing. More specifically, we show how the interplay of the two fundamental collective excitations, the Fermi-edge singularity and the intersubband plasmon, leads to significant changes in lineshape as the electron density varies.

Li, Jian-Zhong↗
NASA NTRS2005

1024x1024 Pixel MWIR and LWIR QWIP Focal Plane Arrays and 320x256 MWIR:LWIR Pixel Colocated Simultaneous Dualband QWIP Focal Plane Arrays

Mid-wavelength infrared (MWIR) and long-wavelength infrared (LWIR) 1024x1024 pixel quantum well infrared photodetector (QWIP) focal planes have been demonstrated with excellent imaging performance. The MWIR QWIP detector array has demonstrated a noise equivalent differential temperature (NE(Delta)T) of 17 mK at a 95K operating temperature with f/2.5 optics at 300K background and the LWIR detector array has demonstrated a NE(Delta)T of 13 mK at a 70K operating temperature with the same optical and background conditions as the MWIR detector array after the subtraction of system noise. Both MWIR and LWIR focal planes have shown background limited performance (BLIP) at 90K and 70K operating-temperatures respectively, with similar optical and background conditions. In addition, we are in the process of developing MWIR and LWIR pixel collocated simultaneously readable dualband QWIP focal plane arrays.

quantum wells↗
DOE OSTI2022

Epitaxial growth, magnetoresistance, and electronic band structure of GdSb magnetic semimetal films

Motivated by observations of extreme magnetoresistance (XMR) in bulk crystals of rare-earth monopnictide (RE-V) compounds and emerging applications in novel spintronic and plasmonic devices based on thin-film semimetals, we have investigated the electronic band structure and transport behavior of epitaxial GdSb thin films grown on III-V semiconductor surfaces. The Gd 3 + ion in GdSb has a high spin S=7/2 and no orbital angular momentum, serving as a model system for studying the effects of antiferromagnetic order and strong exchange coupling on the resulting Fermi surface and magnetotransport properties of RE-Vs. Here, we present a surface and structural characterization study mapping the optimal synthesis window of thin epitaxial GdSb films grown on III-V lattice-matched buffer layers via molecular-beam epitaxy. To determine the factors limiting XMR in RE-V thin films and provide a benchmark for band-structure predictions of topological phases of RE-Vs, the electronic band structure of GdSb thin films is studied, comparing carrier densities extracted from magnetotransport, angle-resolved photoemission spectroscopy (ARPES), and density-functional theory (DFT) calculations. ARPES shows a hole-carrier rich, topologically trivial, semimetallic band structure close to complete electron-hole compensation, with quantum confinement effects in the thin films observed through the presence of quantum-well states. DFT-predicted Fermi wave vectors are in excellent agreement with values obtained from quantum oscillations observed in magnetic field-dependent resistivity measurements. An electron-rich Hall coefficient is measured despite the higher hole-carrier density, attributed to the higher electron Hall mobility. The carrier mobilities are limited by surface and interface scattering, resulting in lower magnetoresistance than that measured for bulk crystals.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Ultrafast Excitonic Response in Two-Dimensional Hybrid Perovskites Driven by Intense Midinfrared Pulses

Two-dimensional organic-inorganic hybrid perovskites (2DHPs) are natural quantum-well-like materials, in which strong quantum and dielectric confinement effects due to the organic spacers give rise to tightly bound excitons with large binding energy. To examine the mutual interactions between the organic spacer cations and the inorganic charge-residing octahedral framework in 2DHPs, here we perform femtosecond pump-probe spectroscopy by direct vibrational pumping of the organic spacers, followed by a visible-to-ultraviolet probe covering their excitonic resonances. Measurements on prototypical lead-bromide based 2DHP compounds, (BA) 2 ⁢PbBr 4 and (BA) 2 ⁢(FA)⁢Pb 2 ⁢Br 7 (BA+ = butylammonium; FA + = formamidinium), reveal two distinct regimes of the temporal response. The first regime is dominated by a pump-induced transient expansion of the organic spacer layers that reduces the exciton oscillator strength, whereas the second regime arises from pump-induced lattice heating effects primarily associated with a spectral shift of the exciton energy. In addition, vibrational excitation enhances the biexciton emission, which we attribute to a stronger intralayer exciton confinement as well as vibrationally induced exciton detrapping from defect states. Finally, our study provides fundamental insights regarding the impact of organic spacers on excitons in 2DHPs, as well as the excited-state dynamics and vibrational energy dissipation in these structurally diverse materials.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2024

Andreev reflection of quantum Hall states through a quantum point contact

Here, we investigate the interplay between the quantum Hall (QH) effect and superconductivity in InAs surface quantum well (SQW)/NbTiN heterostructures using a quantum point contact (QPC). We use QPC to control the proximity of the edge states to the superconductor. By measuring the upstream and downstream resistances of the device, we investigate the efficiency of Andreev conversion at the InAs/NbTiN interface. Our experimental data is analyzed using the Landauer Büttiker formalism, generalized to allow for Andreev reflection processes. We show that by varying the voltage of the QPC, V QPC , the average Andreev reflection, A, at the QH-SC interface can be tuned from 50% to ~ 10%. The evolution of A with V QPC extracted from the measurements exhibits plateaus separated by regions for which A varies continuously with V QPC . The presence of plateaus suggests that for some ranges of V QPC the QPC might be pinching off almost completely from the QH-SC interface some of the edge modes. Our work shows a new experimental setup to control and advance the understanding of the complex interplay between superconductivity and QH effect in two-dimensional gas systems.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2025

Chiral edge state control of thermoelectric effects

Thermoelectric responses in two-dimensional electron gases subjected to magnetic fields have the potential to provide unique information about quasiparticle statistics. In this study, we show that chiral edge states play a key role in thermoelectric Hall bar measurements by completely controlling the direction of the internal thermal gradient. To this end, we perform measurements of the magnetothermoelectric responses of cadmium arsenide quantum wells. The magnetothermoelectric responses in the quantum Hall regime agree with theoretical predictions if one considers the role of chiral edge states, which flow in opposite directions on either side of the Hall bar and establish an internal temperature gradient that is perpendicular to the externally applied thermal gradient. We show that the results are self-consistent within this picture under different measurement conditions. We discuss potential applications of the findings, such as in nanoscale control of local temperature gradients and thermoelectric effects along with the characterization of other topological systems with chiral edges states.

Science & Technology - Other Topics↗
NASA NTRS1996

Sharp Infrared Eyes The Journey of QWIPs from Concept to Large Inexpensive Sensitive Arrays in Hand-held Infrared Cameras

One of the simplest device realizations of the classic particle-in-a-box problem of basic quantum mechanics is the Quantum Well Infrared Photodetector (QWIP). Optimization of the detector design and material growth and processing has culminated in the realization of a camera with a large (256x256 pixel) focal plane array of QWIPs which can see at 8.5 mu m, holding forth great promise for a variety of applications in the 6-25 mu m wavelength range.

Quantum Well Infrared Photodetector QWIP quantum m↗
DOE OSTI2022

Composite fermion mass: Experimental measurements in ultrahigh quality two-dimensional electron systems

Composite fermions (CFs), exotic quasiparticles formed by pairing an electron and an even number of magnetic flux quanta, emerge at high magnetic fields in an interacting electron system, and can explain phenomena such as the fractional quantum Hall state (FQHS) and other many-body phases. CFs possess an effective mass (m CF ) whose magnitude is inversely related to the most fundamental property of a FQHS, namely its energy gap. Here we present here experimental measurements of m CF in ultrahigh quality two-dimensional electron systems confined to GaAs quantum wells of varying thickness. An advantage of measuring m CF over gap measurements is that mass values are insensitive to disorder and are therefore ideal for comparison with theoretical calculations, especially for high-order FQHS. Our data reveal that m CF increases with increasing well width, reflecting a decrease in the energy gap as the electron layer becomes thicker and the in-plane Coulomb energy softens. Comparing our measured masses with available theoretical results, we find significant quantitative discrepancies, highlighting that more rigorous and accurate calculations are needed to explain the experimental data.

36 MATERIALS SCIENCE↗
DOE OSTI2020

GaSb-based heterostructure with buried vacuum pocket photonic crystal layer

The vacuum pocket retaining molecular beam epitaxial regrowth of the nano-patterned GaSb surface was demonstrated. The high contrast 2D photonic crystal layer was incorporated into the test 2 μm emitting laser heterostructure. The photonic dispersion determined from angle-resolved electroluminescence experiment showed four well-resolved bands corresponding to the model predictions for the square lattice. The single-mode lasing near 2 μm has been observed at the temperature corresponding to the alignment of the photonic crystal band-edge states and the quantum well gain peak. The reference devices without the photonic crystal layer emitted trivial spectra and did not lase at any temperature.

77 NANOSCIENCE AND NANOTECHNOLOGY↗