ORNL/superneuro-mat
A matrix-based simulator for neuromorphic computing.
Date, Prasanna [Oak Ridge National Lab. (ORNL), Oa↗
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Results for “neuromorphic”
Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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AdvEP
AdvEP is a code repository which contains PyTorch implementations of various adversarial attacks on a deep neural network trained with Equilibrium Propagation (EP), which is a neuromorphic learning framework. AdvEP allows for the training, testing, and conducting white/black-box attacks of EP models on a wide variety of applications and datasets. AdvEP is based on the open-source code https://github.com/Laborieux-Axel/Equilibrium-Propagation which was developed to train energy models. AdvEP was created by modifying the original code to perform and test against adversarial attacks. AdvEP was developed in Python, a high-level programming language that takes advantage of the Python ecosystem of high-quality open-source packages for machine learning. AdvEP interfaces heavily with the open-source PyTorch Python package as well as the open-source Adversarial Robustness Toolbox (ART) package.
Mansingh, Siddarth↗
Spiking Markov Reward Process v.0.1
SAND2024-11150O The Spiking Markov Reward Process software is a spiking neural network that streams binary arithmetic and computes the state value function of a Markov reward process. The software will be released to the SpiNNcloud group for development of neuromorphic acceleration. Sandia National Laboratories is a multimission laboratory managed and operated by National Technology & Engineering Solutions of Sandia, LLC, a wholly owned subsidiary of Honeywell International Inc., for the U.S. Department of Energy’s National Nuclear Security Administration under contract DE-NA0003525.
Wang, Felix↗
PhasorNetworks.jl: A Software Package for Simulating Oscillatory Neural Networks
SF-25-156 software package to enable the efficient simulation of large-scale neural networks compatible with neuromorphic (biologically-inspired) hardware systems.
Olin-Ammentorp, Wilkie [Argonne National Laborator↗
Role of depth in optical diffractive neural networks
Free-space all-optical diffractive neural networks have emerged as promising systems for neuromorphic scene classification. Understanding the fundamental properties of these systems is important to establish their ultimate performance. Here we consider the case of diffraction by subwavelength apertures and study the behavior of the system as a function of the number of diffractive layers by employing a co-design modeling approach. We show that adding depth allows the system to achieve high classification accuracies with a reduced number of diffractive features compared to a single layer, but that it does not allow the system to surpass the performance of an optimized single layer. The improvement from depth is found to be limited to the first few layers. These properties originate from the constraints imposed by the physics of light, in particular the weakening electric field with distance from the aperture.
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
Electrically tunable nonlinear light generation in plasmonic tunnel junctions
Active and efficient control of nonlinear optical processes is essential for integrated photonics, with applications in signal processing, ultrafast switching, and quantum light manipulation. While nanophotonic structures are powerful for enhancing nonlinearities, achieving wide-range electrical tunability has remained a challenge. Plasmonic tunnel junctions offer a unique path to bridge this gap because they combine extreme optical field confinement with direct electrical control in a single nanoscale device. Here, we report the first, to our knowledge, demonstration of electrically tunable second-harmonic generation (SHG) in plasmonic tunnel junctions. Using ultra-stable epitaxial heterostructures, we achieve reproducible modulation of SHG with depths up to ∼500% and magnitudes above 1.3V −1 . We identify two mechanisms, electric-field-induced SHG (EFISH) and ion migration, that can either compete or cooperate depending on junction thickness and bias, enabling both broad tunability and ferroelectric-like hysteretic switching. These findings establish plasmonic tunnel junctions as a platform for electrically controlled nonlinear optics, with potential for nanoscale light sources, reconfigurable modulators, and neuromorphic photonic devices..
42 ENGINEERING↗
Hydrogen in energy and information sciences
Beyond its fascinating chemistry as the first element in the Periodic Table, hydrogen is of high societal importance in energy technologies and of growing importance in energy-efficient computing. In energy, hydrogen has reemerged as a potential solution to long-term energy storage and as a carbon-free input for materials manufacturing. Its utilization and production rely on the availability of proton-conducting electrolytes and mixed proton–electron conductors for the components in fuel cells and electrolyzers. In computing, proton mediation of electronic properties has garnered attention for electrochemically controlled energy-efficient neuromorphic computing. Incorporation of substitutional and interstitial hydride ions in oxides, though only recently established, enables tuning of electronic and magnetic properties, inviting a range of possible exotic applications. This article addresses common themes in the fundamental science of hydrogen incorporation and transport in oxides as relevant to pressing technological needs. The content covers (1) lattice (or bulk) mechanisms of hydrogen transport, primarily addressing proton transport, but also touching on hydride ion transport; (2) interfacial transport; (3) exploitation of extreme external drivers to achieve unusual response; and (4) advances in methods to probe the hydrogen environment and transport pathway. The snapshot of research activities in the field of hydrogen-laden materials described here underscores exciting recent breakthroughs, remaining open questions, and breathtaking experimental tools now available for unveiling the nature of hydrogen in solid-state matter.
08 HYDROGEN↗
A new era of ferroelectric thin films for nonvolatile memories
Ferroelectric films have potential applications in nonvolatile memory devices. In addition to the well-established perovskite-structure oxide ferroelectrics, hafnia- and wurtzite-based ferroelectrics have recently attracted considerable attention because of the improved scalability of the ferroelectric response (down to nanometer thicknesses), their compatibility with silicon fabrication processes, and the availability of deposition methods that realize three-dimensional structures. Furthermore, due to their high compatibility with silicon processes, these are also expected to be used in emerging energy-efficient applications, such as neuromorphic computing and reservoir computing. In this article, we review the fundamentals of hafnia- and wurtzite-based ferroelectrics and their advantages and issues for developing in nonvolatile memory devices. Then, possible emerging applications are discussed.
36 MATERIALS SCIENCE↗
China’s Bid To Lead Artificial Intelligence Chip Development within the Decade
In 2017, the Chinese government announced an ambitious, broad strategy to become the global leader in artificial intelligence (AI) theories, technologies, and applications by 2030 and indicated that China’s ability to indigenously produce cutting-edge AI chips would be integral to its success. China’s goal to become a dominant producer of AI hardware within a decade is a bold undertaking because China faces domestic chip production challenges and fierce competition from US chip producers. Our review of Chinese AI chip product lines shows various levels where Chinese companies compete with global firms in the production chain. China lacks a robust indigenous AI chip production infrastructure, and the United States and its allies are tightening controls on the supply of advanced semiconductor manufacturing equipment (SME) and electronic design automation (EDA) software to China. In contrast to their Chinese counterparts, US companies operate in all areas of AI chip production and have consistently driven the development of new chip designs. AI chip production is a costly endeavor, and China’s chip producers currently lack the customer base to lead global AI chip development by the 2030 goal. An expanded customer base may help China attract the necessary expertise to bolster its AI chip production chain. This would also help Chinese producers make their investments in the requisite technology economically sustainable. Chinese researchers continue to pursue promising next-generation AI chip designs, such as neuromorphic computing-based architectures, which in the next five to ten years could position Chinese companies to make or contribute to key innovations in the field.
74 ATOMIC AND MOLECULAR PHYSICS↗
Tuning the critical Li intercalation concentrations for MoX 2 bilayer phase transitions using classical and machine learning approaches
Transition metal dichalcogenides (TMDs) such as MoX 2 are known to undergo a structural phase transformation as well as a change in the electronic conductivity upon Li intercalation. These properties make them candidates for charge tunable ion-insertion materials that could be used in electro-chemical devices for neuromorphic computing applications. In this work we study the phase stability and electronic structure of Li-intercalated bilayer MoX 2 with X=S, Se or Te. Using first-principles calculations in combination with classical and machine learning modeling approaches we find that the energy needed to stabilize the conductive phase decreases with increasing atomic mass of the chalcogen atom X. A similar decreasing trend is found in the threshold Li concentration where the structural phase transition takes place. While the electronic conductivity increases with increasing ion concentration at low concentrations, we do not observe a conductivity jump at the phase transition point.
36 MATERIALS SCIENCE↗
Mixed-dimensional stackable electronics enabled by freestanding 2D/3D materials
2D material-based devices have received great deal of attention as they can be easily stacked to obtain multifunctionality. With their ultrathin thicknesses, such multifunctioning devices become so flexible and conformal that they can be placed onto any 3D featured surfaces. However, 2D heterostructures are typically demonstrated as stacked flakes where single or few devices can be fabricated due to lack of strategies for layer-by-layer stacking of 2D materials at the wafer scale. In this talk, I will discuss about our unique strategy to isolate wafer-scale 2D materials into monolayers and stack them into a heterostructures by using a layer-resolved splitting (LRS) technique. This technique enables my group at MIT to explore unprecedented wafer-scale 2D heterodevices including integrated photonics, 3D neuromorphic computing, and microLEDs, which will be introduced in my talk. While 2D heterostructures promise interesting futuristic devices, the performance of 2D material-based devices is substantially inferior to that of conventional 3D semiconductor materials. However, 3D materials exist as their bulk form, thus it is challenging to stack them together for heterostructures. Obviously, conformal coating of such single-crystalline bulks on 3D features is impossible. My group at MIT has recently invented a 2D materials-based layer transfer (2DLT) technique that can produce single-crystalline freestanding membranes from any compound materials with their excellent semiconducting performance. This technique is based on remote epitaxy of single-crystalline films on graphene followed by peeling from graphene. Stacking of freestanding 3D material membranes will enable unprecedented 3D heterostructures whose performance is expected to be superior to that of 2D heterostructures. I will talk about our group’s effort to apply single-crystalline freestanding membranes for flexible, conformal electronics as well as for 3D heterostructures. Finally, I will conclude my talk by discussing perspectives of coupling 2D-3D freestanding membranes for 2D-3D mixed heterostructured devices that can be enabled by our LRS and 2DLT techniques.
Kim, Jeehwan↗
Reimagining Codesign for Advanced Scientific Computing: Report for the ASCR Workshop on Reimagining Codesign
In March 2021, the U.S. Department of Energy’s Advanced Scientific Computing Research program convened the Workshop on Reimagining Codesign. The workshop, also known as ReCoDe, was organized around discussions on eight topic areas: (1) codesign for traditional high-performance computing workloads; (2) codesign of memory/storage systems; (3) codesign of machine learning, neuromorphic, quantum, and other non-von Neumann accelerators; (4) codesign for edge computing and processing at experimental instruments; (5) codesign for security and privacy; (6) hardware design tools and open-source hardware for high-productivity codesign; (7) tools, software stack, and programming languages for high-productivity codesign; and (8) quantitative tools and data collection for modeling and simulation for codesign. The panels identified four Priority Research Directions from these deliberations: (1) breakthrough computing capabilities with targeted heterogeneity and rapid design; (2) software and applications that embrace radical architecture diversity; (3) engineered security and integrity, from transistors to applications; and (4) design with data-rich processes.
97 MATHEMATICS AND COMPUTING↗
Interplay of Magnetism and Superconductivity in van der Waals Heterostructures (Final report)
This project has investigated the magnetic and electric properties of 2D materials, with emphasis on the (anti-)ferromagnetic properties of 2D crystalline magnets and a new concept for stacking engineering of 2D ferroelectricity. The new basic physics fundamental knowledge obtained through this research may have important implications for future technologies based on magnetism and ferroelectricity, for example spintronics, quantum information science, or neuromorphic computing.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
Nanoscale X-ray Imaging and Dynamics of Electronic and Magnetic Materials
This project supported cutting-edge nanoscale characterization developments including X-ray Imaging by utilizing the power of Coherent X-ray Diffractive Imaging (CXDI). This research pioneered new directions in studies of nanoscale dynamics using X-ray Photon Correlation Spectroscopy (XPCS) and Ultrafast X-ray Scattering (UXS), extending our understanding of science and technology at the limits of ultrasmall (atomic/nanoscale) and ultrafast (from seconds to femtosecond dynamics). The research funded by this award spans a wide range of condensed matter and materials physics systems, from correlated oxides and nanomaterials to energy-related materials, and quantum materials for neuromorphic computing.
25 ENERGY STORAGE↗
Ergodicity, lack thereof, and the performance of reservoir computing with memristive networks and nanowire
Networks composed of nanoscale memristive components, such as nanowire and nanoparticle networks, have recently received considerable attention because of their potential use as neuromorphic devices. In this study, we explore ergodicity in memristive networks, showing that the performance on machine leaning tasks improves when these networks are tuned to operate at the edge between two global stability points. We find this lack of ergodicity is associated with the emergence of memory in the system. We measure the level of ergodicity using the Thirumalai-Mountain metric, and we show that in the absence of ergodicity, two different memristive network systems show improved performance when utilized as reservoir computers (RC). We highlight that it is also important to let the system synchronize to the input signal in order for the performance of the RC to exhibit improvements over the baseline.
97 MATHEMATICS AND COMPUTING↗
AI-Enhanced Co-Design for Next-Generation Microelectronics: Innovating Innovation (Workshop Report)
The Artificial Intelligence Enhanced Co-Design for Next Generation Microelectronics virtual workshop was held April 4-5, 2023, and attended by subject matter experts from universities, industry, and national laboratories. This was the third in a series of workshops to motivate the research community to identify and address major challenges facing microelectronics research and production. The 2023 workshop focused on a set of topics from materials to computing algorithms, and included discussions on relevant federal legislation and such as the Creating Helpful Incentives to Produce Semiconductors and Science Act (CHIPS Act) which was signed into law in the summer of 2022. Talks at the workshop included edge computing in radiation environments, new materials for neuromorphic computing, advanced packaging for microelectronics, and new AI techniques. We also received project updates from several of the Department of Energy (DOE) microelectronics co-design projects funded in the fall of 2021, and from three of the Energy Frontier Research Centers (EFRCs) that had been funded in the fall of 2022. The workshop also conducted a set of breakout discussions around the five principal research directions (PRDs) from the 2018 Department of Energy workshop report: 1) define innovative material, device, and architecture requirements driven by applications, algorithms, and software; 2) revolutionize memory and data storage; 3) re-imagine information flow unconstrained by interconnects; 4) redefine computing by leveraging unexploited physical phenomena; 5) reinvent the electricity grid through new materials, devices, and architectures. We tasked each breakout group to consider one primary PRD (and other PRDs as relevant topics arose during discussions) and to address questions such as whether the research community has embraced co-design as a methodology and whether new developments at any level of innovation from materials to programming models requires the research community to reevaluate the PRDs developed back in 2018.
97 MATHEMATICS AND COMPUTING↗
Artificial Intelligence-Enhanced, Multi-Level, Modular System Design
As Moore’s Law and Dennard Scaling come to an end, it is becoming increasingly important to develop non-von Neumann computing architectures that can perform low-power computing in the domains of scientific computing, artificial intelligence, embedded systems, and edge computing. Next-generation computing technologies, such as neuromorphic computing and quantum computing, have the potential to revolutionize computing. However, in order to make progress in these fields, it is necessary to fundamentally change the current computing paradigm by codesigning systems across all system level, from materials to software. Because skilled labor is limited in the field of next-generation computing, we are developing artificial intelligence-enhanced tools to automate the codesign and co-discovery of next-generation computers. Here, we develop a method called Modular and Multi-level MAchine Learning (MAMMAL) which is able to perform analog codesign and co-discovery across multiple system levels, spanning devices to circuits. We prototype MAMMAL by using it to design simple passive analog low-pass filters. We also explore methods to incorporate uncertainty quantification into MAMMAL and to accelerate MAMMAL by using emerging technologies, such as crossbar arrays. Ultimately, we believe that MAMMAL will enable rapid progress in developing next-generation computers by automating the codesign and co-discovery of electronic systems.
97 MATHEMATICS AND COMPUTING↗
Controlling reversible phase transitions in rare-earth nickelates for novel memory devices
Resistive switching in correlated complex oxides is lucrative for emerging applications in neuromorphic computing, and densely scaled non-volatile memory. Electrical conductance of such complex oxides can be controllable switched across multiple orders of magnitude by either (a) electroforming a conduction channel (e.g., in tungsten oxide), or (b) inducing Mott-Hubbard transition (e.g., in rare-earth nickelates)– both via controlled migration of defects (such as oxygen vacancies) under applied bias. Nevertheless, the promise of such defect-driven electronic transitions are far from realized due to a lack of fundamental understanding of the atomic-scale processes that underlie migration and spatiotemporal evolution of oxygen vacancies over nano-to-mesoscopic length/timescales under applied electric field. In this project, we employ a synergistic integration of density functional theory (DFT) calculations, ab initio/classical molecular dynamics (AIMD/CMD) simulations, machine learning (ML), precision synthesis, and multi-modal X-ray imaging experiments to address this knowledge gap. Such an integrated approach offers to elucidate the correlations between subtle structural distortion and oxidation states; treat localized charge carriers; describe defect/ion transport in the presence of electric field; and, in turn, greatly advance the current understanding of microstructural evolution in complex oxides under applied bias. The fundamental knowledge gained from this work will enable precise control over hierarchical defect structures and unravel new routes to manipulate resistance states in complex oxides. This, in turn, will accelerate design of novel devices with desired set of neural functionalities, and high-speed densely-scaled resistive random access memory technologies.
36 MATERIALS SCIENCE↗