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At least 487 records · Page 27

Unusual electrical and magnetic properties in layered EuZn 2 As 2

Eu-based compounds often exhibit unusual magnetism, which is critical for nontrivial topological properties seen in materials such as EuCd 2 As 2 . The authors investigate the structure and physical properties of EuZn 2 As 2 through measurements of the electrical resistivity, Hall effect, magnetization, and neutron diffraction. Their data show that EuZn 2 As 2 orders antiferromagnetically with an A-type spin configuration below T N = 19 K. Surprisingly, there is strong evidence for dominant ferromagnetic fluctuations above T N , as reflected by positive Curie–Weiss temperature and extremely large negative magnetoresistance (MR) between T N and T fl ≈200 K. Furthermore, the angle dependence of the MRab indicates field-induced spin reorientation from the ab-plane to a direction ≈45° from the ab plane. Compared to EuCd 2 As 2 , the doubled T N and T fl make EuZn 2 As 2 a better platform for exploring nontrivial magnetic and electronic properties in both magnetic fluctuation (T N < T < T fl ) and ordered (T < T N ) regimes.

36 MATERIALS SCIENCE↗

Observation of Topological Spin Textures in Ferrimagnetic Mn 2 − x Zn x Sb

Ferrimagnets, which have both ferromagnetic and antiferromagnetic coupling, are attracting increased attention in the realm of spintronic devices due to advantages such as ultrafast dynamics and a suppressed skyrmion Hall effect. Thus, understanding the behavior of nontrivial spin textures in ferrimagnets is crucial; however, comprehensive reports on this topic remain limited. Here, the magnetic spin textures of ferrimagnetic Mn 2 − x Zn x Sb (x = 0.85) is explored as a function of temperature and applied magnetic field. The spin textures can be tuned to a variety of states, including stripes, skyrmion bags, and a skyrmion lattice. Chiral Néel-type magnetic structures are visualized using Lorentz transmission electron microscopy. Mn(I) ions are slightly shifted toward the Sb sites, which may be due to a strong electrostatic interaction between Mn and Sb ions. This local structural distortion breaks the inversion symmetry and introduces an effective Dzyaloshinkii–Moriya interaction. This work thus provides a pathway to use doping and heterogeneity in a ferrimagnet to control and generate chiral nontrivial spin textures.

Mn ion displacement↗

The role of temperature on defect diffusion and nanoscale patterning in graphene

Graphene is of great scientific interest due to a variety of unique properties such as ballistic transport, spin selectivity, the quantum hall effect, and other quantum properties. Nanopatterning and atomic scale modifications of graphene are expected to enable further control over its intrinsic properties, providing ways to tune the electronic properties through geometric and strain effects, introduce edge states and other local or extended topological defects, and sculpt circuit paths. The focused beam of a scanning transmission electron microscope (STEM) can be used to remove atoms, enabling milling, doping, and deposition. Utilization of a STEM as an atomic scale fabrication platform is increasing; however, a detailed understanding of beam-induced processes and the subsequent cascade of aftereffects is lacking. Here, we examine the electron beam effects on atomically clean graphene at a variety of temperatures ranging from 400 to 1000 °C. We find that temperature plays a significant role in the milling rate and moderates competing processes of carbon adatom coalescence, graphene healing, and the diffusion (and recombination) of defects. The results of this work can be applied to a wider range of 2D materials and introduce better understanding of defect evolution in graphite and other bulk layered materials.

36 MATERIALS SCIENCE↗

Uncertainty analysis of steady-state measurements with a hot-filament type calorimetric emissometer

Calorimetric emissometers measure total hemispherical emissivity by measuring the heat transferred from a heated sample to its surroundings under a vacuum. The accuracy of emissometers standardized by the ASTM C835-06 are well understood. This work uses the Guide to the Evaluation of Uncertainty in Measurement (GUM) for the propagation uncertainties for an ASTM compliant emissometer. The GUM method was able to develop a measurement model and expressions to determine the uncertainty for other emissometers of this type. Data on ‘as-received’ Hastelloy X was used to develop a detailed uncertainty analysis of the emissivity measurement. Data on ‘as-received’ SS 347 and sandblasted A387 Gr. 91 and previous data by the group on A508/A533B were used to determine uncertainty over the ranges 0.16 to 0.81. For all samples, relative uncertainties in emissivities varied from 0.77% to 2.5% when using a fluxgate magnetometer sensor (FMS) to measure the DC heating current. Data on Hastelloy X using a Hall-effect sensor for DC current and low alloy steel showed the DC current and voltage across the test section to be dominate sources of uncertainty. When these sources were reduced, the specimen temperature and the surface area of the test sections were main sources of uncertainty in the emissivity, especially at higher temperatures. As thermal expansion of the surface was considered in the calculations, correlation between specimen temperature and surface area was examined. It was found to be a small contribution to emissivity's uncertainty despite the differences in linear CTE and its uncertainty for the materials analyzed in this study. For low temperatures, the chamber temperature can be a significant source of uncertainty if not sufficiently cooled. The GUM was also briefly compared to uncertainty from the 2nd and 3rd expansions of the Taylor series. We found that the results were the same when rounding to two significant figures.

42 ENGINEERING↗

Self-induced spin-orbit torques in metallic ferromagnets

Herein we present a phenomenological theory of spin-orbit torques in a metallic ferromagnet with spin-relaxing boundaries. The model is rooted in the coupled diffusion of charge and spin in the bulk of the ferromagnet, where we account for the anomalous Hall effects as well as the anisotropic magnetoresistance in the corresponding constitutive relations for both charge and spin sectors. The diffusion equations are supplemented with suitable boundary conditions reflecting the spin-sink capacity of the environment. In inversion-asymmetric heterostructures, the uncompensated spin accumulation exerts a dissipative torque on the order parameter, giving rise to a current-dependent linewidth in the ferromagnetic resonance with a characteristic angular dependence. We compare our model to recent spin-torque ferromagnetic resonance measurements, illustrating how rich self-induced spin-torque phenomenology can arise even in simple magnetic structures.

36 MATERIALS SCIENCE↗

Soliton motion induced along ferromagnetic skyrmion chains in chiral thin nanotracks

Using atomistic magnetic simulations we investigate the soliton motion along a pinned skyrmion chain containing an interstitial skyrmion. We find that the soliton can exhibit stable motion along the chain without a skyrmion Hall effect for an extended range of drives. Under a constant drive the solitons have a constant velocity. We also measure the skyrmion velocity–current curves and identify the signatures of different phases including a pinned phase, stable soliton motion, and quasi-free motion at higher drives where all of the skyrmions depin from the pinning centers and move along the rigid wall. In the quasi-free motion regime, the velocity is oscillatory due to the motion of the skyrmions over the pinning sites. For increasing pinning strength, the onset of soliton motion shifts to higher values of current density. We also find that for stronger pinning, the characteristic velocity–current shape is affected by the annihilation of single or multiple skyrmions in the drive interval over which the soliton motion occurs. Our results indicate that stable skyrmion soliton motion is possible and that the solitons could be used as information carriers instead of the skyrmions themselves for technological applications.

36 MATERIALS SCIENCE↗

Enhancing the performance of the perovskite solar cells by modifying the SnO 2 electron transport layer

The tin oxide (SnO 2 ) electron transport layer (ETL) plays a vital role in the photo-conversion efficiency (PCE) and stability of organic-inorganic perovskite solar cells (PSCs). However, SnO 2 ETL-induced defects such as hydroxyl groups, oxygen vacancies, exposed Sn atoms, and dangling bonds hinder device performance. In this study, rubidium chloride (RbCl) has been used to modify the SnO 2 ETL. Perovskite film formed on the RbCl-modified SnO 2 ETL exhibits improved crystallinity with enlarged grain size and reduced grain boundaries and enhanced optical absorption. Further, the Hall-effect measurements indicate the improved carrier mobility, and the dark J-V curve shows the increment of electrical conductivity for the RbCl-modified SnO 2 ETL. X-ray photoelectron spectroscopy (XPS) results demonstrate the surface defects passivation of the perovskite layer by modifying the SnO 2 ETL. A champion PCE of 19.35% has been achieved for the RbCl-modified SnO 2 ETL-based devices with improved stability, while the control devices with unmodified SnO 2 ETL show a PCE of 17.18%.

14 SOLAR ENERGY↗

Unveiling field-transverse spin anisotropy in the spin liquid candidate α-RuCl3 via spin Hall magnetoresistance

α-RuCl3 has emerged as a possible candidate for a quantum spin liquid (QSL) that promises exotic quasiparticles relevant for fault-tolerant quantum computation. Here, we report spin-sensitive transport measurements using a proximal spin Hall metal, platinum (Pt), to probe magnetic moments in the insulator α-RuCl3. We observe spin Hall magnetoresistance (SMR), where both the transverse and longitudinal resistivities exhibit angular oscillations between the in-plane magnetic field and the current, driven by the interplay between the spin Hall effect in Pt and local magnetic moments in α-RuCl3. These oscillations occur from 1.5 to 18 T, covering the zigzag antiferromagnetic, putative QSL, and supposedly partially field-polarized phases. The phase of the SMR oscillations suggests that the local moments, whether static or fluctuating, develop spin anisotropy with a quantization axis in-plane and largely transverse to the magnetic field across all fields from 1.5 to 18 T. Temperature dependence indicates that the spin anisotropy operates at an energy scale similar to that of the reported QSL signatures in α-RuCl3.

Idzuchi, Hiroshi [Tohoku University, Japan]↗

Titanium doped kagome superconductor CsV 3–x Ti x Sb 5 and two distinct phases

The vanadium-based kagome superconductor CsV 3 Sb 5 has attracted tremendous attention due to its unexcepted anomalous Hall effect (AHE), charge density waves (CDWs), nematicity, and a pseudogap pair density wave (PDW) coexisting with unconventional strong-coupling superconductivity. The origins of CDWs, unconventional superconductivity, and their correlation with different electronic states in this kagome system are of great significance, but so far, are still under debate. Chemical doping in the kagome layer provides one of the most direct ways to reveal the intrinsic physics, but remains unexplored. Here, we report, for the first time, the synthesis of Ti-substituted CsV 3 Sb 5 single crystals and its rich phase diagram mapping the evolution of intertwining electronic states. The Ti atoms directly substitute for V in the kagome layers. CsV 3–x Ti x Sb 5 shows two distinct superconductivity phases upon substitution. The Ti slightly-substituted phase displays an unconventional V-shaped superconductivity gap, coexisting with weakening CDW, PDW, AHE, and nematicity. The Ti highly-substituted phase has a U-shaped superconductivity gap concomitant with a short-range rotation symmetry breaking CDW, while long-range CDW, twofold symmetry of in-plane resistivity, AHE, and PDW are absent. Furthermore, we also demonstrate the chemical substitution of V atoms with other elements such as Cr and Nb, showing a different modulation on the superconductivity phases and CDWs. These findings open up a way to synthesise a new family of doped CsV 3 Sb 5 materials, and further represent a new platform for tuning the different correlated electronic states and superconducting pairing in kagome superconductors.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Fabrication of nanoporous doped metal oxide coatings via selective infiltration of a block copolymer template: The case of Al-doped zinc oxide

Conductive nanoporous conformal coatings are important for various applications including touchscreens, displays, and electrochromic windows, though design of such coating with controlled porosity and composition remains challenging. We propose a sequential infiltration synthesis (SIS) method for the fabrication of nanoporous conductive aluminum-doped zinc oxide (AZO) films by infiltrating block copolymer (BCP) templates, specifically polystyrene-block-polyvinyl pyridine (PS-b-P4VP), with diethyl zinc and trimethyl aluminum precursors. Tunability of both porosity and electrical conductivity is achieved by precisely controlling the swelling behavior of the polymer templates and adjusting the number of SIS cycles. Further, our results reveal that porosity levels can reach up to 80 %, with resistivity as low as ~7.83 Ωcm. Using conductive atomic force microscopy (C-AFM) and Hall effect measurements, we show that lower concentrations of aluminum doping relative to zinc (around 1: 17) results in higher conductivity of the AZO films. Additionally, AZO is based on zinc oxide (ZnO) which is cost-efficient, abundant and less toxic than commonly used transparent conductive oxides such as indium tin oxide (ITO) and fluorine-doped tin oxide (FTO). Therefore, this novel approach opens new possibilities for creating highly porous, conformal, conductive AZO coatings with customizable porosity and composition, making them ideal candidates for diverse optoelectronic applications.

36 MATERIALS SCIENCE↗

Synthesis, Stability, and Magnetic Properties of Antiperovskite Co 3 PdN

Experimental synthesis and characterization of theoretically predicted compounds are important steps in the materials discovery pipeline. Here, we report on the synthesis of Co 3 PdN, which was recently predicted to be a stable magnetic antiperovskite. The Co 3 PdN thin films were grown by reactive sputtering and were confirmed to form in an antiperovskite crystal structure. The thermal stability of the compound is demonstrated up to 600 K by in situ X-ray diffraction, though the phase persists at slightly higher temperatures (700 K) in an air-free magnetometer. Both ab initio calculations and magnetization measurements find Co 3 PdN to be ferromagnetic with an experimentally determined Curie temperature of T C = 560 ± 5 K. The saturation magnetization of 1.2 μ B /Co found in the experiment is slightly lower than the 1.7 μ B /Co value expected by theory. A narrow magnetic hysteresis loop with a coercive field of 100 Oe at low temperature suggests that Co 3 PdN might be useful in electronic applications requiring fast switching of the magnetization vector. While prior prediction of Co 3 PdN showed a gapped electronic band structure for each spin channel, we show that this was due to incomplete sampling of Brillouin zone paths and that band crossings exist along R-X|M and X|M-R paths. The metallic nature of Co 3 PdN is further confirmed by temperature-dependent transport measurements, which also show a considerable anomalous Hall effect. Altogether, this work represents an appreciable step toward understanding the synthesis, structure, stability, and properties of a new magnetic material.

14 SOLAR ENERGY↗

Anisotropic Ferromagnetism in CrAu 3 Sb 6

The crystal structure and properties of CrAu 3 Sb 6 are presented, determined by measurements on single crystal and polycrystalline samples and first-principles calculations. The trigonal structure (space group P$\overline{3}$1m) comprises a CdI 2 -like sublattice of AuSb 2 with Cr occupying octahedral holes in a fully ordered triangular array. It can be viewed as a variation of the interesting and well-known families of partially intercalated transition metal dichalcogenides, but with stronger interactions along the stacking direction evidenced by short Cr–Au distances. The compound is metallic and ferromagnetic with a Curie temperature of 164 K. A strong anomalous contribution to the Hall effect is seen in the ferromagnetic state, and quantum oscillations are observed in magnetization at 2 K. Magnetization measurements show that the ordered moments of 1.5 μ B per Cr are oriented along the c-axis with relatively strong magnetocrystalline anisotropy. Electronic structure calculations confirm this uniaxial anisotropy and the important role of spin–orbit coupling in CrAu 3 Sb 6 and reveal strongly favored ferromagnetic ground state consistent with the measured Curie temperature. Through combined experiment and theory, this work provides a detailed picture of the basic properties and behaviors of this uniquely structured, Cr-based, anisotropic ferromagnet.

Crystal structure↗

Enhancing MnBi 2 Te 4 Stability by Doping

MnBi 2 Te 4 (MBT) is an intrinsically magnetic topological material that possesses unique properties due to the quantum Hall effect. However, the low Mn–Bi mixed antisite formation energy is detrimental to these properties as it alters the long-range magnetic ordering in the Mn layer. Therefore, it is crucial to destabilize the antisite defects in MBT while preserving the favorable electronic properties. Here, to this end, we utilized a screening approach to understand the role of dopants in the Mn and Bi sites. We find that Sc, Y, and La dopings prefer substitutions on the Bi site and significantly increase the Mn–Bi antisite defect formation energy. We find that the contribution from the empty s and d states of Sc, Y, and La around the Fermi level is insignificant. However, at the high concentration limit, the Bi–Te octahedra are significantly modified with doping, leading to important changes in the band structure.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Topochemical Synthesis and Electronic Structure of High-Crystallinity Infinite-Layer Nickelates on an Orthorhombic Substrate

Superconductivity in infinite-layer nickelates has stirred much research interest, to which questions regarding the nature of superconductivity remain elusive. A critical leap forward to address these intricate questions is through the growth of high-crystallinity infinite-layer nickelates, including the “parent” phase. Here, we report the synthesis of a high-quality thin-film nickelate, NdNiO 2 . This is achieved through the growth of a perovskite precursor phase (NdNiO 3 ) of superior crystallinity on the NdGaO 3 substrate by off-axis RF magnetron sputtering and a low-temperature topochemical reduction using NaH. We observe a nonlinear Hall effect at low temperatures in this “non-doped” phase. We further study the electronic properties using advanced X-ray scattering and first-principles calculations. We observe spectroscopic indications of the enhanced two-dimensionality and a reduced hybridization of Nd 5d and Ni 3d orbitals. These findings unlock new pathways for preparing high-quality infinite-layer nickelates and provide new insights into the intrinsic features of these compounds.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Influence of Copper Composition on Cu 2 BaSn(S,Se) 4 Solution-Deposited Films and Photovoltaic Devices with Over 5% Efficiency

Cu 2 BaSn(S,Se) 4 is currently in the spotlight for prospective environmentally friendly, stable, thin-film solar cell application, with demonstrated device power conversion efficiency (PCE) exceeding 5% for vacuum-deposited absorbers. As suggested by first-principles calculations, experimental studies involving related Cu 2 ZnSn(S,Se) 4 and Cu(In,Ga)(S,Se) 2 absorbers prove that the detailed chemical composition typically plays a sensitive role in altering defects and electronic properties of these complicated compound semiconductors. Herein, the copper composition of Cu 2 BaSn(S,Se) 4 has been systematically modified, employing a solution-based deposition approach, to provide a more complete picture of the phase stability and optoelectronic property sensitivity for this material. X-ray diffraction and scanning electron microscopy show that phase purity is preserved over a film Cu content range of nominally 0.94 ≤ [Cu]/[Ba + Sn] ≤ 1.01. Terahertz spectroscopy and Hall effect measurements reveal that the majority carrier hole density of ~10 13 cm –3 and mobility (~5 cm 2 /V s), as well as the minority carrier lifetime (a bulk lifetime of 180 ps and a surface recombination velocity >106 cm/s), are nominally independent of Cu content. The champion PCEs exceed 4.7% for all copper compositions in the phase-pure region, with a record value of 5.1%, similar to the reported values for record vacuum-deposited devices. Furthermore, these results suggest that Cu 2 BaSn(S,Se) 4 films and solar cells (at the current performance level) may be less sensitive to Cu stoichiometry compared to kesterite materials and therefore may provide a more stable material platform to prepare thin-film solar cells.

(CBTSSe)↗

Detection of the Chiral Spin Structure in Ferromagnetic SrRuO 3 Thin Film

SrRuO3 (SRO) thin films and their heterostructure have brought much attention because of the recently demonstrated fascinating properties, such as topological Hall effect and skyrmions. Critical to the understanding of those SRO properties is the study of the spin configuration. Here, we conduct resonant soft x-ray scattering (RSXS) at the oxygen K-edge to investigate the spin configuration of a 4 unit-cell SRO film that was grown epitaxially on a single crystal SrTiO 3 . The RSXS signal under a magnetic field (~0.4 Tesla) clearly shows a magnetic dichroism pattern around the specular reflection. Model calculations on the RSXS signal demonstrate that the magnetic dichroism pattern originates from a Néel-type chiral spin structure in this SRO thin film. We believe that the observed spin structure of the SRO system is a critical piece of information for understanding its intriguing magnetic and transport properties.

36 MATERIALS SCIENCE↗

Nanoscale Control of Intrinsic Magnetic Topological Insulator MnBi 2 Te 4 Using Molecular Beam Epitaxy: Implications for Defect Control

Intrinsic magnetic topological insulators have emerged as a promising platform to study the interplay between the topological surface states and ferromagnetism. This unique interplay can give rise to a variety of exotic quantum phenomena, including the quantum anomalous Hall effect and axion insulating states. Here, in this study, utilizing molecular beam epitaxy (MBE), we present a comprehensive study of the growth of MnBi 2 Te 4 thin films on Si (111), epitaxial graphene, and highly ordered pyrolytic graphite substrates. By combining a suite of in situ characterization techniques, we obtain critical insights into the nanoscale control of MnBi 2 Te 4 epitaxial growth. First, we extract the free energy landscape for the epitaxial relationship as a function of the in-plane angular distribution. Then, by employing an optimized layer-by-layer growth, we determine the chemical potential and Dirac point of the thin film at different thicknesses and how this quantity is manifested by the dopant compensation from different antisite defects. Overall, these results establish a foundation for understanding the growth kinetics of MnBi 2 Te 4 and pave the way for future applications of MBE-grown thin films in emerging topological quantum materials.

36 MATERIALS SCIENCE↗

cm 2 -Scale Synthesis of MoTe 2 Thin Films with Large Grains and Layer Control

Owing to the small energy differences between its polymorphs, MoTe 2 can access a full spectrum of electronic states from the 2H semiconducting state to the 1T' semimetallic state and from the T d Weyl semimetallic state to the superconducting state in the 1T' and T d phase at low temperature. Thus, it is a model system for phase transformation studies as well as quantum phenomena such as the quantum spin Hall effect and topological superconductivity. Careful studies of MoTe 2 and its potential applications require large-area MoTe 2 thin films with high crystallinity and thickness control. Here, we present cm 2 -scale synthesis of 2H-MoTe 2 thin films with layer control and large grains that span several microns. Layer control is achieved by controlling the initial thickness of the precursor MoO x thin films, which are deposited on sapphire substrates by atomic layer deposition and subsequently tellurized. Despite the van der Waals epitaxy, the precursor–substrate interface is found to critically determine the uniformity in thickness and grain size of the resulting MoTe 2 films: MoTe 2 grown on sapphire show uniform films while MoTe 2 grown on amorphous SiO 2 substrates form islands. Furthermore, this synthesis strategy decouples the layer control from the variabilities of growth conditions for robust growth results and is applicable to growing other transition-metal dichalcogenides with layer control.

2D materials↗