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At least 487 records · Page 27

Relation between L-band soil emittance and soil water content

An experimental relation between soil emittance (E) at L-band and soil surface moisture content (M) is compared with a theoretical one. The latter depends on the soil dielectric constant, which is a function of both soil moisture content and of soil texture. It appears that a difference of 10 percent in the surface clay content causes a change in the estimate of M on the order of 0.02 cu m/cu m. This is based on calculations with a model that simulates the flow of water and energy, in combination with a radiative transfer model. It is concluded that an experimental determination of the E-M relation for each soil type is not required, and that a rough estimate of the soil texture will lead to a sufficiently accurate estimate of soil moisture from a general, theoretical relationship obtained by numerical simulation.

Stroosnijder, L.↗

The physical basis for spectral variations in thermal infrared emittance of silicates and application to remote sensing

The use of infrared spectroscopy for the remote characterization of planetary surfaces has received attention due to efforts in the investigation of these bodies from space. In the 8 to 14 micron region, a depression in the emittance spectra of rocks (sometimes called reststrahlen) is related to the fundamental stretching vibrations of Si-O bonds and shifts in the locations of this feature are ascribed to variations in rock composition. Thus, it should be possible to investigate, quantify, and model the relationships of reststrahlen spectral band location through silicate mineralogical composition to rock classification. This concept will be tested first through the use of laboratory-acquired data on the infrared spectra and mineralogy of selected mineral and rock samples. As a suitable classification model is developed, it will be tested through overflights of appropriate rock outcrops using the Thermal Infrared Multispectral Scanner (TIMS).

Walter, Louis S.↗

The GaAs solar cells with V-grooved emitters

Geometrically structured surfaces have become increasingly important to solar cell efficiency improvements and radiation tolerance. Gallium arsenide solar cells with a V-grooved front surface which demonstrate improved optical coupling and higher short-circuit current compared to planar cells were fabricated. GaAs homojunction cells were fabricated by organometallic chemical vapor deposition (OMCVD) on an n+ substrate. The V-grooves were formed on the surface with an anisotropic etch, and an n-type buffer and p-type emitter were grown by OMCVD, followed by ohmic contacts. Reflectivity measurements show significantly lower reflectance for the microgrooved cell compared to the planar structure. The short circuit current of the V-grooved solar cell is consistently higher than that of the planar controls.

Bailey, Sheila G.↗

Arc-textured high emittance radiator surfaces

High emittance radiator surfaces are produced by arc-texturing. This process produces such a surface on a metal by scanning it with a low voltage electric arc from a carbon electrode in an inert environment.

Banks, Bruce A.↗

Passive ranging of an airborne emitter by a single non-maneuvering or stationary sensor

A method for passively determining the range of a target vehicle relative to a non-cooperating moving test platform is disclosed. The method includes the steps of moving the test platform along a single linear path at a constant speed, while simultaneously performing a succession of bearing and frequency measurements on a radiant signal emitted by the moving target vehicle. Similarly, the test platform may remain stationary so that its velocity is zero. The measured parameters, along with knowledge of the test platform's own position and velocity, permit the range to the emitter, its velocity and its transmitted frequency to be determined.

Martin Golinsky↗

22 W coherent GaAlAs amplifier array with 400 emitters

Greater than 22 W of optical power has been demonstrated from a multiple-emitter, traveling-wave semiconductor amplifier, with approximately 87 percent of the output at the frequency of the injection source. The device integrates, in AlGaAs graded-index separate-confinement heterostructure single quantum well (GRINSCH-SQW) epitaxy, 400 ridge waveguide amplifiers with a coherent optical signal distribution circuit on a 12 x 6 mm chip.

Krebs, D.↗

High emittance surfaces for high temperature space radiator applications

Surface modification techniques are evaluated for emittance enhancement of radiator surfaces. These techniques include acid etching, heat treating, abrasion, sputter texturing, electrochemical texturing, arc texturing, and atomic oxygen beam texturing. Candidate radiator surface materials under consideration include Nb-1 pct Zr, Cu, Ti, Ti-6 pct Al-4 pct V, 304 stainless steel, Al6061-T6, Mo, W, and Ta.

Banks, Bruce A.↗

High efficiency thermal to electric energy conversion using selective emitters and spectrally tuned solar cells

Thermophotovoltaic (TPV) systems are attractive possibilities for direct thermal-to-electric energy conversion, but have typically required the use of black body radiators operating at high temperatures. Recent advances in both the understanding and performance of solid rare-earth oxide selective emitters make possible the use of TPV at temperatures as low as 1500 K. Depending on the nature of parasitic losses, overall thermal-to-electric conversion efficiencies greater than 20 percent are feasible.

Chubb, Donald L.↗

Investigation of Field Emitter Array Vacuum Microtriodes for Space Electronics Applications

Research into processing techniques for fabrication of vacuum microelectronic devices has been carried out, with special emphasis being given to the growth of silicon dioxide thin films. Oxide films ranging from 30 nm to approximately 2 micrometers have been grown on single crystal silicon wafers. Metal-oxide-semiconductor capacitor test structures have been made from some of these oxide films, and current-versus-voltage plots for these structures have been measured. It has been observed that the rate of applied voltage across the oxide films produces marked differences in measured leakage current. Breakdown fields across two of the thinnest oxide films have been measured and are comparable with highest values reported in literature. Several silicon wafers were processed to make field- emitter array diodes, and were delivered to collaborators at NASA-Lewis Research Center for final fabrication steps and testing.

Smith, Mark A.↗

Oxidation and Emittance Studies of Coated Mo-Re

A commercially available Fe-Cr-Si coating (R512E) and a silicide coating were evaluated regarding their ability to protect Mo-Re from oxidation. The R512E coating provided very good oxidation protection at 1260 C in atmospheric air. Oxidation tests were also performed at Mach 4 in the HYMETS facility at NASA Langley Research Center where again the R512E provided good oxidation protection but for much shorter times. Emittance measurements as a function of wavelength were also obtained for the R512E coating on Mo-Re after exposure to the Mach 4 environment at 1150 C and 1230 C.

Glass, David E.↗

Spectral Emittance and Reflectance Measurements at the Jet Propulsion Laboratory

In late 1959 a spectrophotometer laboratory was established at JPL to be used as a support for temperature-control programs. The immediate task was spectroradiometric measurements of light sources to be used in a simulated-deep-space environment chamber. It was also necessary to have permanent provisions for measuring reflectances of surfaces for the calculation of solar absorptance alpha, and thermal emittance epsilon. The spectral distribution of an unknown source, in this case a Ventarc carbon-arc lamp, was derived from the ratio of detector outputs (with monochromatic light) of the arc lamp and a tungsten lamp, and the spectral intensity of the tungsten lamp. The tungsten lamp is a ribbonfilament lamp calibrated from 0.25 to 2.6 microns. A recording of pen deflection (linearly proportional to detector output) of each source over the visible and near infrared range is made with all parameters (slit width, amplifier gain, and source focusing) identical; then the ratios are computed at discrete wavelengths from these recordings. Because the spectral intensities of the tungsten lamp and a solar simulator are very different in most of the range, an adjustable slit is placed immediately in front of the detector to obtain comparable pen deflections for the two sources. This slit is set by means of a feeler gage, and the attenuation coefficient is evaluated by a transmission measurement.

Maclay, James E.↗

Controlling Variable Emittance (MEMS) Coatings for Space Applications

Small spacecraft, including micro and nanosats, as they are envisioned for future missions, will require an alternative means to achieve thermal control due to their small power and mass budgets. One of the proposed alternatives is Variable Emittance (Vari-E) Coatings for spacecraft radiators. Space Technology-5 (ST-5) is a technology demonstration mission through NASA Goddard Space Flight Center (GSFC) that will utilize Vari-E Coatings. This mission involves a constellation of three (3) satellites in a highly elliptical orbit with a perigee altitude of approximately 200 kilometers and an apogee of approximately 38,000 kilometers. Such an environment will expose the spacecraft to a wide swing in the thermal and radiation environment of the earth's atmosphere. There are three (3) different technologies associated with this mission. The three technologies are electrophoretic, electrochromic, and Micro ElectroMechanical Systems (MEMS). The ultimate goal is to make use of Van-E coatings, in order to achieve various levels of thermal control. The focus of this paper is to highlight the Vari-E Coating MEMS instrument, with an emphasis on the Electronic Control Unit responsible for operating the MEMS device. The Test & Evaluation approach, along with the results, is specific for application on ST-5, yet the information provides a guideline for future experiments and/or thermal applications on the exterior structure of a spacecraft.

Farrar, D.↗

Process for producing a high emittance coating and resulting article

Process for anodizing aluminum or its alloys to obtain a surface particularly having high infrared emittance by anodizing an aluminum or aluminum alloy substrate surface in an aqueous sulfuric acid solution at elevated temperature and by a step-wise current density procedure, followed by sealing the resulting anodized surface. In a preferred embodiment the aluminum or aluminum alloy substrate is first alkaline cleaned and then chemically brightened in an acid bath The resulting cleaned substrate is anodized in a 15% by weight sulfuric acid bath maintained at a temperature of 30.degree. C. Anodizing is carried out by a step-wise current density procedure at 19 amperes per square ft. (ASF) for 20 minutes, 15 ASF for 20 minutes and 10 ASF for 20 minutes. After anodizing the sample is sealed by immersion in water at 200.degree. F. and then air dried. The resulting coating has a high infrared emissivity of about 0.92 and a solar absorptivity of about 0.2, for a 5657 aluminum alloy, and a relatively thick anodic coating of about 1 mil.

Le, Huong G.↗

Monolithic semiconductor light emitter and amplifier

A semiconductor light emitter comprising a substrate of a semiconductor material having a pair of opposed surfaces and a body of semiconductor material on one of the surfaces. The body includes a pair of clad layers of opposite conductivity types having an intermediate quantum well region therebetween. The clad layers are of a semiconductor material which forms a heterojunction with the material of the quantum well region. The clad layers and the quantum well region form a waveguide which extends along the body. A plurality of gain sections are formed in the body spaced along and optically coupled by the waveguide. Each of the gain sections is adapted to generate light therein when a voltage is placed thereacross. One of the gain section has gratings at each end thereof which are adapted to reflect light back into the one gain section and thereby create a beam of light. The grating between the one gain section and an adjacent gain section is adapted to allow some of the light generated in the one gain section to pass therethrough along the waveguide to the next gain section. Each of the other gain sections have gratings adjacent an end opposite the first gain sections. The periods of the grating are such that no self-oscillation of the light in the waveguide occurs so that each of the other gain sections serve as single pass amplifiers. The gratings also direct the amplified light from the other gain sections out of the body.

Carlson, Nils W.↗

Improved Photoresist Coating for Making CNT Field Emitters

An improved photoresist-coating technique has been developed for use in the fabrication of carbon-nanotube- (CNT) based field emitters is described. The improved photoresist coating technique overcomes what, heretofore, has been a major difficulty in the fabrication process.

Toda, Risaku↗

T-Shaped Emitter Metal Structures for HBTs

Metal emitter structures in a class of developmental InP-based high-speed heterojunction bipolar transistors (HBTs) have been redesigned to have T-shaped cross sections. T-cross-section metal features have been widely used in Schottky diodes and high-electron-mobility transistors, but not in HBTs. As explained, the purpose served by the present T cross-sectional shapes is to increase fabrication yields beyond those achievable with the prior cross-sectional shapes.

Fung, King Man↗

Measurement of the Solar Absorptance and Thermal Emittance of Lunar Simulants

The first comparative study of the reflectance spectra of lunar simulants is presented. All of the simulants except one had a wavelength-dependent reflectivity, rho(lambda), near 0.10 over the wavelength range of 8 to 25 microns, so they are highly emitting at room temperature and lower. The 300 K emittance, epsilon, of all the lunar simulants except one ranged from 0.884 to 0.906. The 300 K epsilon of JSC Mars-1 simulant was 0.927. There was considerably more variation in the lunar simulant reflectance in the solar spectral range (250 to 2500 nm) than in the thermal infrared. Larger particle size simulants reflected much less than those with smaller particle size. As expected, the lunar highlands simulants were more reflective in this wavelength range than the lunar mare simulants. The alpha of the simulants ranged from 0.413 to 0.817 for those with smaller particles and 0.669 to 0.906 for large particles. Although spectral differences were observed, the total integrated alpha for the simulants appears to be similar to that of lunar soils (0.65 to 0.88). These data are now available to be used in modeling the effects of dust on thermal control surfaces.

Gaier, James R.↗