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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 487 records · Page 27
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Spin Effects in Low Dimensional Correlated Systems (Final Technical Report)

Our program focuses on the behavior of two-dimensional superconducting systems that have been placed in high magnetic fields and/or in contact with magnetic materials. Our specific research agenda is organized into two separate but related areas. The first is a study of disorder and correlation effects in extremely thin superconducting aluminum, beryllium, and rhenium films that have been subjected to very high magnetic fields. We are particularly interested in understanding how the coupling between the applied field and the electron spins affects the system’s ability to form superconducting state. We now have good evidence that as the electron spins in these superconductors attempt to align to the magnetic field, a new superconducting phase emerges near the critical field transition and that this phase has a significant influence on the character of the transition. Thus, the spin behavior near the transition is much more complex than expected. The second class of systems is proximity structures comprised of superconducting/ferromagnetic (SC/FM) and superconducting/heavy metal (SC/HM) bilayers. We have developed spin-resolved tunneling probes that give us a direct measure of the proximity-induced exchange field in the SC/FM structures, as well as the spin-orbit scattering rate in SC/HM structures. Recently we have demonstrated that the magnitude of the exchange field can be modulated with an external gate, thereby producing a magneto-electric response in the bilayers. We plan to optimize this magneto-electric effect by getting a better understanding of the microscopic mechanism of the interface-induce exchange field, as well as improving the gate barriers and/or the bilayer interface quality. The ultimate goal is to develop a device such as a voltage-controlled superconducting switch or a spin- polarized electron source with a voltage-tunable Zeeman splitting.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2023

Anomalously abrupt switching of wurtzite-structured ferroelectrics: simultaneous non-linear nucleation and growth model

Ferroelectric polarization switching is one common example of a process that occurs via nucleation and growth, and understanding switching kinetics is crucial for applications such as ferroelectric memory. Here we describe and interpret anomalous switching dynamics in the wurtzite-structured nitride thin film ferroelectrics Al 0.7 Sc 0.3 N and Al 0.94 B 0.06 N using a general model that can be directly applied to other abrupt transitions that proceed via nucleation and growth. When substantial growth and impingement occur while nucleation rate is increasing, such as in these wurtzite-structured ferroelectrics under high electric fields, abrupt polarization reversal leads to very large Avrami coefficients ( e.g., n = 11), inspiring an extension of the KAI (Kolmogorov–Avrami–Ishibashi) model. We apply this extended model to two related but distinct scenarios that crossover between (typical) behavior described by sequential nucleation and growth and a more abrupt transition arising from significant growth prior to peak nucleation rate. This work therefore provides a more complete description of general nucleation and growth kinetics applicable to any system while specifically addressing the anomalously abrupt polarization reversal behavior in new wurtzite-structured ferroelectrics.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Demonstrating the β-Ga 2 O 3 Schottky diodes for alpha radiation detection

Schottky barrier diodes were fabricated on (001) monoclinic β-Ga 2 O 3 wafers with low doped epitaxial layers of 7.0 × 10 15 cm −3 . Circular Ni Schottky contacts with area 2 mm 2 were deposited by electron beam evaporation. Devices were characterized electrically by performing forward and reverse current-voltage sweeps with a range of −100 V–2 V, as well as capacitance-voltage sweeps to −30 V. The breakdown voltage was also determined to be −180 V for the devices. Experiments measuring the electrical response from incident X-ray radiation was performed. A response time to X-ray radiation of less than 1 s was recorded and a decay time of approximately 2 s after removing X-ray source, which primarily attribute to X-ray switching on and off time. Energy spectra of alpha particles from a 0.9 μCi 241 Am button source was collected at various voltage biases using devices with the lowest measured leakage current while reverse biased. The total count rate was observed to increase linearly with increasing device bias. In conclusion, the peak channel number was observed to increase with increasing bias with the best resolution of 9.5% at −100 V reverse bias.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2021

Comparison of Simulation of Dual-Active Bridge in Different Simulators and Using Different Simulation Methods

The accuracy of states measured from simulation of a dual-active bridge (DAB) converter with an open-loop controller has been used for comparing simulation software and algorithms. The accuracy of the measured states is sensitive to simulation settings and parameters chosen. In this paper, the simulation of the DAB converter with open-loop control is run in the MATLAB/Simscape Electrical, PLECS, and PSCAD software environments, with various simulation settings. The simulation results are also compared with a new simulation algorithm proposed for DAB simulations. Different simulation settings are evaluated, including different solver types, operating conditions, and the on-state resistance values of the MOSFET switches. The simulation results are compared with the theoretical calculations. It is shown that unexpected divergence and DC offset may occur in some cases. This paper provides guidelines to simulate the DAB converter with open-loop control.

Yin, Shiyuan↗
DOE OSTI2022

ARPA-E PNDIODES "PN Junctions by Ion Implantation" Project (Final Report)

Electricity accounts for nearly 40% of the energy generated in the United States, of which 65% is lost to electrical system inefficiency before reaching end-use sectors. Power electronics will play a growing role in this distribution and end-use, with up to 80% of electricity estimated to pass through power electronics from generation to consumption by 2030. This gives technical improvements in power electronics enormous potential to drive efficiency gains throughout the U.S. economy. Current Si-based power architectures including MOSFETs and IGBTs are limited by high losses, low switching frequency, and poor high-temperature performance. Given the material properties of GaN, devices can exhibit a given turn-on resistance and breakdown voltage with a minute fraction of the area of a Si device—all with higher switching speeds. While n-type doping of III-nitrides has reached a high level of maturity and integration into commercialized products, p-type doping presents distinct challenges that requires continued research. The success of the next generation of GaN-based power devices depends in large part on the ability to form selective-area p-type regions, which can be accomplished by ion implantation of the prevailing acceptor dopant, Mg. This approach is relatively inexpensive and is a fab-ready processing step for creation of current-generation power electronic devices including BJTs, IGBTs, and diode rectifiers. However, ion implantation induces lattice damage and creates point defects within the material, which negatively impacts dopant activation annealing. These forms of damage may be removed by high-temperature annealing, however short annealing time and higher pressures are required to prevent decomposition of the material. We approach this challenge through an innovative combination of approaches toward obtaining high-conductivity p-type GaN. By the novel employment of a gyrotron, a microwave source that can be shaped into a highly localized beam to dissipate very high power in a semiconductor target, a wafer of GaN can be annealed in short (<2 s) ‘pulses’ at temperatures of 1450 °C (2640 °F) to achieve p-type activation without appreciable surface degradation. The p-type activation of Mg-implanted GaN can be further aided by co-implantation with N, believed to enhance the removal of point defects that compensate the acceptors dopant. Elevation to such high temperatures for even a short time induces degradation of GaN-to overcome, we have implemented additional measures to retain high-quality crystalline GaN while removing implant damage and activating Mg dopant. A bilayer cap of AlN is deposited by a combination of chemical and physical vapor deposition to protect the GaN surface. To prevent decomposition of GaN loss of N during annealing, a custom vessel—to contain pressurized N while allowing injection of microwave energy—is employed. By detailed study of the interaction of various measures that are implemented to protect the sample surface (GaN), activate the implanted dopants, and mitigate damage of the lattice heating damage during annealing, we are able to achieve p-type GaN and observe recovery of the crystal and removal of substantial density of defects created during the implantation process.

24 POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2022

Switching the conductance of a single molecule: Lessons from molecular junctions

The concept of using single molecules as functional building blocks in electronic circuitry represents the ultimate device miniaturization and has garnered tremendous attention from physics, chemistry, and engineering. Recent advances in single-molecule junction techniques have enabled direct investigation of charge transport in a quasi-one-dimensional conduction channel composed of an individual molecule. Furthermore, one of the main research focuses over the past decade has been to understand the conductance switching effect of single molecules as it is essential for developing molecular-scale optoelectronics, computing, and sensing applications. In this perspective, we highlight the established physical and chemical mechanisms for single-molecule conductance switching behavior and examine the associated stimuli in single-molecule junction systems.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2025

Aluminum Boron Nitride Ferroelectric Field-Effect Transistors With ZnO Semiconductor Channel

The discovery of ferroelectricity in hafnium zirconium oxide (HfxZr 1−x O2) and related fluorite materials has spurred interest in ferroelectric devices suitable for integration with silicon integrated circuits (ICs), especially those that can be embedded in the back-end-of-line (BEOL) process. More recently, ferroelectricity has been found in wurtzite aluminum nitride-based materials, such as scandium and boron-doped aluminum nitride (Al 1−x ScxN and Al 1−x BxN). Although these materials currently have undesirably large coercive electric fields, and small breakdown electric field-to-coercive electric field ratio, their low processing temperatures and large remanent polarization offer intriguing possibilities for device applications. Furthermore, we report ferroelectric field-effect transistors (FeFETs) with a 15 nm thick Al0.88B0.12N layer and an 11 nm ZnO semiconductor channel, achieving a memory window >1 V and switching voltages ( V switch ) <±10 V.

42 ENGINEERING↗
DOE OSTI2023

Seamless Transition of Critical Infrastructures using Droop Controlled Grid-forming Inverters

Seamless recovery of power to critical infrastructures, after grid failure, is a crucial need arising in scenarios that are increasingly becoming more frequent. Here, this article proposes a seamless transition strategy using a single and unified mode-dependent droop controlled grid-forming inverters. The control strategy achieves the following objectives: 1) regulates the output active and reactive power by the droop-controlled inverters to a desired value while operating in on-grid mode; 2) seamless transition and recovery of power injections into the load after grid failure by inverters that operates in grid-forming mode all the time; 3) requires only a single bit of information on the grid/network status for the mode transition. A framework for assessing the stability of the system and to guide the choice of parameters for controllers is developed using control-oriented modeling. A controller hardware-in-the-loop-based real-time simulation study on a test system based on the realistic electrical network of a commercial-scale medical center is conducted for initial prototyping of the control strategy. A hardware experiment is conducted with two 3 - $\phi$, 480 -V, 125 -kVA grid-forming inverters, a 3 - $\phi$, 480 -V, 270 -kVA grid simulator, a physical grid switch, and a physical load bank. The experimental data establishes the effectiveness of the always grid-forming operation and control of inverters in meeting power delivery objectives when on-grid and off-grid under various kinds of loads and scenarios while minimizing transients during transitions. Furthermore, performance comparison with existing strategies showcases the advantage of the proposed strategy.

24 POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2023

Seismic detection switch

A seismic switch (SS) that is able to detect and signal when internal faults have occurred within the SS is described. The SS provides safety class functionality to the detection of seismic activity. For example, the SS may detect earthquakes above a specified level, resulting in the disconnection of electrical power to a radioactive waste storage facility, which could result in the ignition of waste materials should the storage facility and/or storage container fail during a seismic event. By reducing the risk of fire under these circumstances, the possibility of offsite releases is significantly reduced.

Hayward, Allen D.↗
DOE OSTI2024

External Fast Electrically-Controlled Ferroelectric Tuners for SRF Cavities

Euclid Techlabs LLC, in collaboration with JLAB (R. Rimmer, C. Hovater) has been awarded the Phase I 2021 DOE SBIR DE-SC0021510 project to develop the first Fast Ferroelectric reactive tuner (FRT) for a SRF accelerator that is currently in operation – CEBAF at JLAB, and is studying the possibility of developing a tuner designs for various new applications: fast frequency switching, transient detuning, and microphonics compensation for the SRF accelerators.

43 PARTICLE ACCELERATORS↗
DOE OSTI2021

Fork Union EPC Installation Observation Report

On June 22nd and 23rd, a representative from Savannah River National Lab (SRNL) traveled to the Fork Union substation in Fork Union, Virginia (owned and operated by Dominion Energy) to observe the installation, calibration, and commissioning of three Electric Phenomena Cluster (EPC) sensors. The installation in its entirety included the physical securing of the EPC sensors by Dominion Energy, fiber optic cable (furnished by SmartSenseComm) being run in conduits and cable trays from the EPC sensor to the Optical Processing Unit (OPU) located in the substation switch house. The location of the EPC sensors, OPU, and cable routing can be seen in the figures included.

47 OTHER INSTRUMENTATION↗
DOE OSTI2026

Photoresponsive Rotaxanes Switch Lipid Bilayer Neuromorphic Behavior with Light

A rotaxane consisting of a macrocycle ring with two azobenzene units mechanically interlocked onto a bolaamphiphilic axle was incorporated into droplet interface bilayers (DIBs). The azobenzene groups on the ring underwent quasi-reversible, photoisomerization-induced cycling between 1-E and 1-Z configurations when irradiated with 370 and 467 nm light, respectively, enabling programmable access to different history-dependent electrical behaviors from the same membrane. In the 1-E configuration, bilayers exhibited type-IIactive memristance that coincided with increasingly elevated ionic conduction, associated with progressively enhanced bilayer permeability during voltage cycling. In the 1-Z configuration, bilayers displayed type-I, passive memcapacitive behavior, reflecting tighter lipid packing and reduced ionic permeability. Photoswitching also yielded a nonvolatile, photoresponsive memcapacitor that could be modulated repetitively with negligible loss, likely via reversible changes in membrane thickness. Concurrent ohmic leakage currents across the membrane were less than 0.3%. These results agree with previous studies with increasing membrane permeability using photoswitchable rotaxanes and provide new insights into the coupling between volatile and nonvolatile memcapacitance during photoisomerization. More broadly, they demonstrate a new strategy for the manipulation of neuromorphic behaviors in soft materials using light, with implications for brain-inspired computation and sensing.

droplet interface bilayers↗
DOE OSTI2024

LENS: Learning Enabled Network Synthesis

RTRC and UMD have developed novel machine learning based methods under the ARPA-E DIFFERENTIATE program for rapid acceleration of hypothesis generation in complex architecture design spaces involving both discrete choices of component inclusion and interconnection and continuous parametric decisions. The project named Learning Enabled Network Synthesis (LENS) further demonstrated the developed methods on challenging electrical power converter design problems by identifying the most suitable circuit topologies and simultaneously selecting the most appropriate components to achieve optimized design of power converter with improved performances. We demonstrated that LENS could enable exploration of very large design space of circuit topologies and components by addressing the limitations of conventional design process in non-linear, high switching speed, multi-dimensional power converter design and optimization. The key innovation developed in LENS is the seamless integration of statistical learning and logical reasoning techniques and building on the individual strengths of these techniques for rapid hypothesis discovery. The main component of LENS comprises of: 1) Graph Reasoning Engine (GRE) to enforce composition rules that rapidly reject all discrete architectures that are composed incorrectly and generates an adaptive database of feasible designs which can be used by ML modules, 2) Graph Generative Learning module which is a deep neural network based generative model for graph architectures which can enable design space exploration beyond the dataset generated by the GRE, 3) Graph Reduced Order Model (ROM) for graph domains for accelerating computation of output metrics, and 4) Active learning and Rule Discovery module for sample efficient learning and extracting logical rules from the learned ML models which will be integrated in the GRE to enhance the filtering effectiveness. LENS approach can be applied to any design domains where designs can be represented as multi-attribute graphs. The LENS team integrated the various technical innovations listed above into an optimization pipeline and exercised the optimization pipeline on the converter design problem. The LENS project demonstrated that the developed AI/ML technologies can be used to generate novel converter circuits >45x faster than experts on chosen use-cases. This can enable faster design space exploration and identification of new designs which are not considered by experts due to the increasing design space complexity. This has significant potential impact on the public and energy needs of the country. It is currently estimated that 30% of all electrical powers generated passes through power converters. The future estimate is that 80% of all power generated would be passing through converters. LENS fills a critical gap in this space since by accelerating the design process the designers would be able to generate more efficient converters which can lead to significant energy savings for the country.

42 ENGINEERING↗
DOE OSTI2023

Polarization-dependent electrocaloric and pyroelectric effects in ferroelectric BaTiO 3 thin films

In this paper we examine the influence of controllable polarization reversal and built-in electric fields on pyroelectric and electrocaloric effects in a BaTiO 3 thin film using a modified indirect method. We find that the magnitude of the sample's change in polarization with temperature is sensitive to the degree of polarization reversal. The pyroelectric response is small at low fractions of switched polarization and grows larger by several factors as larger fractions of polarization are reversed. This polarization reversal-sensitive pyroelectric behavior is the result of an internal built-in field, which has the effect of destabilizing low fractions of switched polarization and producing diminished pyroelectric effect. Greater fractions of switched polarization are more stable against backswitching and permit a larger pyroelectric response. Our findings highlight a characterization method for polarization-dependent pyroelectric effects in ferroelectric thin films, where built-in field effects are also present.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Energy performance analysis of smart wall system with switchable insulation and thermal storage capacity

The ever-increasing global energy demand and the issues caused by population growth and unsustainable energy resource usages have several environmental and economic impacts. The on-demand capability of dynamic wall systems with switchable insulation systems can contribute toward energy efficiency and reduced electric cost using "building-as-a-battery." In this paper, the performance of an exterior envelope system that employs a switchable insulation system is investigated. A COMSOL simulation was used to study the envelope performance under three switchable insulation locations in the wall system. The on and off switching cycle included insulating or conducting the exterior, interior, or both sides of the mass wall system. To validate the simulation work, an experimental test was conducted in climate chamber on a 4 × 8 in. wall system with identical wall components used in the COMSOL simulation. Results show a good agreement between the experiment and simulation results. The wall system with switchable insulation placed on the exterior side provided the highest interior inward heat flux when compared with the interior or split insulation. Also, an exterior switchable insulation system in addition to a thermal mass maintained a positive heat flow for more hours when the outdoor temperature was lower than the interior temperature.

Iffa, Emishaw↗
DOE OSTI2022

Emergent ferroelectricity in subnanometer binary oxide films on silicon

The critical size limit of voltage-switchable electric dipoles has extensive implications for energy-efficient electronics, underlying the importance of ferroelectric order stabilized at reduced dimensionality. Here, we report on the thickness-dependent antiferroelectric-to-ferroelectric phase transition in zirconium dioxide (ZrO 2 ) thin films on silicon. The emergent ferroelectricity and hysteretic polarization switching in ultrathin ZrO 2 , conventionally a paraelectric material, notably persists down to a film thickness of 5 angstroms, the fluorite-structure unit-cell size. This approach to exploit three-dimensional centrosymmetric materials deposited down to the two-dimensional thickness limit, particularly within this model fluorite-structure system that possesses unconventional ferroelectric size effects, offers substantial promise for electronics, demonstrated by proof-of-principle atomic-scale nonvolatile ferroelectric memory on silicon. Additionally, it is also indicative of hidden electronic phenomena that are achievable across a wide class of simple binary materials.

42 ENGINEERING↗
DOE OSTI2021

Component Modeling, Co-Optimization, and Trade-Space Evaluation (FY2021 Annual Progress Report)

This project is intended to support the development of new traction drive systems that meet the targets of 100 kW/L for power electronics and 50 kW/L for electric machines with reliable operation to 300,000 miles. To meet these goals, new designs must be identified that make use of state-of-the-art and next-generation electronic materials and design methods. Designs must exploit synergies between components, for example converters designed for high-frequency switching using wide band gap devices and ceramic capacitors. This project includes: (1) a survey of available technologies; (2) the development of design tools that consider the converter volume and performance; (3) exercising the design software to evaluate performance gaps and predict the impact of certain technologies and design approaches, i.e. GaN semiconductors, ceramic capacitors, and select topologies; and (4) building and testing hardware prototypes to validate models and concepts. Early instantiations of the design tools enable co-optimization of the power module and passive elements and provide some design guidance; later instantiations will enable the co-optimization of inverter and machine. Prototype testing begins with evaluation of simpler conversion topologies (i.e. the half-bridge boost converter) and progresses with fabrication of prototype inverter drives.

33 ADVANCED PROPULSION SYSTEMS↗
DOE OSTI2022

Driving ultrafast spin and energy modulation in quantum well states via photo-induced electric fields

Abstract The future of modern optoelectronics and spintronic devices relies on our ability to control the spin and charge degrees of freedom at ultrafast timescales. Rashba spin-split quantum well states, 2D states that develop at the surface of strong spin-orbit coupling materials, are ideal given the tunability of their energy and spin states. So far, however, most studies have only demonstrated such control in a static way. In this study, we demonstrate control of the spin and energy degrees of freedom of surface quantum well states on Bi 2 Se 3 at picosecond timescales. By means of a focused laser pulse, we modulate the band-bending, producing picosecond time-varying electric fields at the material’s surface, thereby reversibly modulating the quantum well spectrum and Rashba effect. Moreover, we uncover a dynamic quasi-Fermi level, dependent on the Lifshitz transition of the second quantum well band bottom. These results open a pathway for light-driven spintronic devices with ultrafast switching of electronic phases, and offer the interesting prospect to extend this ultrafast photo-gating technique to a broader host of 2D materials.

36 MATERIALS SCIENCE↗