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At least 487 records · Page 27

Closing the Accuracy Gap in Tandem Photovoltaic Testing: An Accessible and Efficient Spectral Tuning Method Using LED-Based Simulators for Research Laboratories and Industry

Accurate performance calibration of multijunction (MJ) solar cells is critical for advancing this technology toward large-scale terrestrial application, yet existing testing methods developed by photovoltaics calibration laboratories remain prohibitively complex and resource intensive for most research laboratories. Current approaches rely on expensive multisource simulators and/or intricate spectral tuning algorithms, limiting accessibility and hindering standardized comparisons of emerging MJ technologies such as perovskite-based tandems. This paper introduces a streamlined spectral irradiance adjustment method for light-emitting diode (LED)-based solar simulators, which are increasingly adopted in the photovoltaics community due to their versatility and cost-effectiveness. The method we present bins LED channels into groups based on the number of junctions of the MJ photovoltaic device under test (DUT) and their corresponding band gaps and incorporates an automated tuning algorithm that eliminates the need to adjust each channel’s irradiance individually. This tuning algorithm requires the relative spectral responsivities of both the DUT and a broadband reference cell, as well as a calibrated spectroradiometer. Measurement validation across various MJ devices, including III-V and perovskite/silicon tandems, demonstrates excellent agreement within 1% with well-established xenon-tungsten multisource simulators and associated tuning algorithms. By enabling precise spectral tuning with readily available equipment and a simple tuning algorithm, our approach bridges the measurement accuracy gap between research laboratories and accredited testing facilities, fostering more reliable device comparisons and accelerating the translation of MJ technologies into real-world energy systems.

14 SOLAR ENERGY↗

Efficient photovoltaic heterojunctions of indium tin oxides on silicon

Heterojunction diodes of indium tin oxide films sputtered on to p-silicon using ion-beam techniques display significant photovoltaic effects when exposed to sunlight. Galvanomagnetic and optical measurements confirm that the oxide films are highly degenerate transparent semiconductors. At a tin oxide concentration of 10%, an open-circuit voltage of 0.51 V was observed along with a short-circuit current of 32 mA/sq cm, a fill factor of 0.70, and a conversion efficiency of 12%. As the concentration was raised to 70%, the voltage remained steady, the current fell to 27 mA/sq cm, and the fill factor fell to 0.60

Dubow, J. B.↗

NASA Tech Briefs, November 2010

Topics covered include: Portable Handheld Optical Window Inspection Device; Salience Assignment for Multiple-Instance Data and Its Application to Crop Yield Prediction; Speech Acquisition and Automatic Speech Recognition for Integrated Spacesuit Audio Systems ; Predicting Long-Range Traversability from Short-Range Stereo-Derived Geometry; Browser-Based Application for Telemetry Monitoring of Robotic Assets; Miniature Low-Noise G-Band I-Q Receiver; Methods of Using a Magnetic Field Response Sensor Within Closed, Electrically Conductive Containers; Differential Resonant Ring YIG Tuned Oscillator; Microfabricated Segmented-Involute-Foil Regenerator for Stirling Engines; Reducing Seal Adhesion in Low Impact Docking Systems; Optimal Flow Control Design; Corrosion-Resistant Container for Molten-Material Processing; Reusable Hot-Wire Cable Cutter; Deployment of a Curved Truss; High-Volume Airborne Fluids Handling Technologies to Fight Wildfires; Modeling of Alkane Oxidation Using Constituents and Species; Fabrication of Lanthanum Telluride 14-1-11 Zintl High-Temperature Thermoelectric Couple; A Computer Model for Analyzing Volatile Removal Assembly; Analysis of Nozzle Jet Plume Effects on Sonic Boom Signature; Optical Sidebands Multiplier; Single Spatial-Mode Room-Temperature-Operated 3.0 to 3.4 micrometer Diode Lasers; Self-Nulling Beam Combiner Using No External Phase Inverter; Portable Dew Point Mass Spectrometry System for Real-Time Gas and Moisture Analysis; Maximum Likelihood Time-of-Arrival Estimation of Optical Pulses via Photon-Counting Photodetectors; Handheld White Light Interferometer for Measuring Defect Depth in Windows; Decomposition Algorithm for Global Reachability on a Time-Varying Graph; Autonomous GN and C for Spacecraft Exploration of Comets and Asteroids; Efficient Web Services Policy Combination; Using CTX Image Features to Predict HiRISE-Equivalent Rock Density; Isolation of the Paenibacillus phoenicis, a Spore-Forming Bacterium; Monolithically Integrated, Mechanically Resilient Carbon-Based Probes for Scanning Probe Microscopy; Cell Radiation Experiment System; Process to Produce Iron Nanoparticle Lunar Dust Simulant Composite; Inversion Method for Early Detection of ARES-1 Case Breach Failure; Use of ILTV Control Laws for LaNCETS Flight Research;and Evaluating Descent and Ascent Trajectories Near Non-Spherical Bodies.

Source record↗

Series-Connected Buck Boost Regulators

A series-connected buck boost regulator (SCBBR) is an electronic circuit that bucks a power-supply voltage to a lower regulated value or boosts it to a higher regulated value. The concept of the SCBBR is a generalization of the concept of the SCBR, which was reported in "Series-Connected Boost Regulators" (LEW-15918), NASA Tech Briefs, Vol. 23, No. 7 (July 1997), page 42. Relative to prior DC-voltage-regulator concepts, the SCBBR concept can yield significant reductions in weight and increases in power-conversion efficiency in many applications in which input/output voltage ratios are relatively small and isolation is not required, as solar-array regulation or battery charging with DC-bus regulation. Usually, a DC voltage regulator is designed to include a DC-to-DC converter to reduce its power loss, size, and weight. Advances in components, increases in operating frequencies, and improved circuit topologies have led to continual increases in efficiency and/or decreases in the sizes and weights of DC voltage regulators. The primary source of inefficiency in the DC-to-DC converter portion of a voltage regulator is the conduction loss and, especially at high frequencies, the switching loss. Although improved components and topology can reduce the switching loss, the reduction is limited by the fact that the converter generally switches all the power being regulated. Like the SCBR concept, the SCBBR concept involves a circuit configuration in which only a fraction of the power is switched, so that the switching loss is reduced by an amount that is largely independent of the specific components and circuit topology used. In an SCBBR, the amount of power switched by the DC-to-DC converter is only the amount needed to make up the difference between the input and output bus voltage. The remaining majority of the power passes through the converter without being switched. The weight and power loss of a DC-to-DC converter are determined primarily by the amount of power processed. In the SCBBR, the unswitched majority of the power is passed through with very little power loss, and little if any increase in the sizes of the converter components is needed to enable the components to handle the unswitched power. As a result, the power-conversion efficiency of the regulator can be very high, as shown in the example of Figure 1. A basic SCBBR includes a DC-to-DC converter (see Figure 2). The switches and primary winding of a transformer in the converter is connected across the input bus, while the secondary winding and switches are connected in series with the output bus, so that the output voltage is the sum of the input voltage and the secondary voltage of the converter. In the breadboard SCBBR, the input voltage applied to the primary winding is switched by use of metal oxide/semiconductor field-effect transistors (MOSFETs) in a full bridge circuit; the secondary winding is center-tapped, with two MOSFET switches and diode rectifiers connected in opposed series in each leg. The sets of opposed switches and rectifiers are what enable operation in either a boost or a buck mode. In the boost mode, input voltage and current, and the output voltage and current are all positive; that is, the secondary voltage is added to the input voltage and the net output voltage can be regulated at a value equal or greater than the input voltage. In the buck mode, input voltage is still positive and the current still flows in the same direction in the secondary, but the switches are controlled such that some power flows from the secondary to the primary. The voltage across the secondary and the current into the primary are reversed. The result is that the output voltage is lower than the input voltage, and some power is recirculated from the converter secondary back to the input. Quantitatively, the advantage of an SCBBR is a direct function of the regulation range required. If, for example, a regulation range of 20 percent is required for a 500-W supply, th it suffices to design the DC-to-DC converter in the SCBBR for a power rating of only 100 W. The switching loss and size are much smaller than those of a conventional regulator that must be rated for switching of all 500 W. The reduction in size and the increase in efficiency are not directly proportional to switched-power ratio of 5:1 because the additional switches contribute some conduction loss and the input and output filters must be larger than those typically required for a 100-W converter. Nevertheless, the power loss and the size can be much smaller than those of a 500-W converter.

Birchenough, Arthur G.↗

Pulse Response of the Short-Wave Infrared Detection System of the Ocean Color Instrument for the NASA PACE Mission

The Ocean Color Instrument (OCI) on NASA’s Plankton, Aerosol, Cloud, ocean Ecosystem (PACE) mission is a hyperspectral Earth imager with a spatial resolution of 1 km x 1 km and a spectral resolution of 5 nm in 2.5 nm steps over 342-887 nm. In addition, OCI provides 7 discrete bands in the 940-2260 nm Short-Wave InfraRed (SWIR) range. The front-end optical imager is a rotating mirror-based system that images the ground scene onto a slit with an instantaneous field of view of 16 km x 1 km. For the SWIR bands, the slit-image is re-imaged onto a 16x1 micro-lens array that effectively acts as the focal plane since each lens element is fiber coupled to wavelength filtered InGaAs and HgCdTe Photo Diodes (PDs). The pulse response of the detection system is critical to OCI SWIR performance. We find that PDs introduce an inherent slow tail in the pulse response due to slow diffusion moving carriers in their n and p regions. We show that this introduces response errors ranging from 1 down to 0.01 % for up to tens of science pixels after the pulse depending on the PD design and materials. It is shown that the response is distinctly different for the InGaAs and HgCdTe PDs. We explain how the front-end design can further increase this error. Finally, we detail the cause of the slow pulse response tail, how to model it, its impact on OCI performance and how it is characterized and corrected to meet OCI requirements.

ocean color↗

Pulse Response of the Short-Wave Infrared Detection System of the Ocean Color Instrument for the NASA Pace Mission

The Ocean Color Instrument (OCI) on NASA’s Plankton, Aerosol, Cloud, ocean Ecosystem (PACE) mission is a hyperspectral Earth imager with a spatial resolution of 1 km x 1 km and a spectral resolution of 5 nm in 2.5 nm steps over 342-887 nm. In addition, OCI provides 7 discrete bands in the 940-2260 nm Short-Wave InfraRed (SWIR) range. The front-end optical imager is a rotating mirror-based system that images the ground scene onto a slit with an instantaneous field of view of 16 km x 1 km. For the SWIR bands, the slit-image is re-imaged onto a 16x1 micro-lens array that effectively acts as the focal plane since each lens element is fiber coupled to wavelength filtered InGaAs and HgCdTe Photo Diodes (PDs). The pulse response of the detection system is critical to OCI SWIR performance. We find that PDs introduce an inherent slow tail in the pulse response due to slow diffusion moving carriers in their n and p regions. We show that this introduces response errors ranging from 1 down to 0.01 % for up to tens of science pixels after the pulse depending on the PD design and materials. It is shown that the response is distinctly different for the InGaAs and HgCdTe PDs. We explain how the front-end design can further increase this error. Finally, we detail the cause of the slow pulse response tail, how to model it, its impact on OCI performance and how it is characterized and corrected to meet OCI requirements.

ocean color↗

Comparative Study of Lettuce and Radish Grown Under Red and Blue LEDs and White Fluorescent Lamps

Growing vegetable crops in space will be an essential part of sustaining astronauts during long-range missions. To drive photosynthesis, red and blue light-emitting diodes (LEDs) have attracted attention because of their efficiency, longevity, small size, and safety. In efforts to optimize crop yield, there is also recent interest in analyzing the subtle effects of additional wavelengths on plant growth. For instance, since plants often look purplish gray under red and blue LEDs, the addition of green light allows easy recognition of disease and the assessment of plant health status. However, it is important to know if wavelengths outside the traditional red and blue wavebands have a direct effect on enhancing or hindering the mechanisms involved in plant growth. In this experiment, a comparative study was performed on two short cycle crops of red romaine lettuce (Lactuca sativa cv. "Outredgeous") and radish (Raphanus sativa cv. 'Cherry Bomb'), which were grown under two light treatments. The first treatment being red (630 nm) and blue (450 nm) LEDs alone, while the second treatment consisted of daylight tri-phosphor fluorescent lamps (CCT approximately 5000 K) at equal photosynthetic photon flux (PPF). The treatment effects were evaluated by measuring the fresh biomass produced, plant morphology and leaf dimensions, leaf chlorophyll content, and adenosine triphosphate (ATP) within plant leaf/storage root tissues.

Food Production↗

The Galileo single-event upset solution and risk assessment

The Galileo probe will be subject to radiation fields and energetic particle bombardment during its outward bound journey and in orbit around Jupiter and its moons. To avoid the occurrence and propagation of effects of single event upset (SEU) bit state changes induced by the bombardments attempts were made to harden the Galileo electronics against SEUs. The hazards are especially acute for Schottky diode and low-power Schottky TTL parts. The preventive action options which were scheduled are reviewed, noting the selection of CMOS chips as replacements for SEU-susceptible devices. The simulation and risk assessment that were performed to evaluate the potential success of the replacements are summarized, with emphasis on the data employed to ensure the accuracy of the assessments and the predicted effects of SEUs in the various Galileo subsystems.

Burdick, Garry M.↗

Using Si Diodes To Detect H2 Liquid/Vapor Interfaces

Commercially available silicon-diode temperature sensors used to detect interfaces between hydrogen liquid and hydrogen vapor at steady-state saturation conditions. Sensors mounted at short intervals along rod to form rake-like array. Array inserted in tank with rod oriented vertically, where it senses level of liquid hydrogen to resolution equal to interval between sensors. Basic idea to measure voltage across sensor while supplying small electric current that heats sensor. Because vapor cools sensor less effectively than liquid does, sensor's steady-state temperature greater when sensor surrounded by vapor than when immersed in liquid. Voltage output decreases as temperature increases for silicon diodes. Thus, temperature (voltage) reading used to determine whether liquid level above or below sensor.

Dempsey, Paula Jean↗

Using machine learning with optical profilometry for GaN wafer screening

Abstract To improve the manufacturing process of GaN wafers, inexpensive wafer screening techniques are required to both provide feedback to the manufacturing process and prevent fabrication on low quality or defective wafers, thus reducing costs resulting from wasted processing effort. Many of the wafer scale characterization techniques—including optical profilometry—produce difficult to interpret results, while models using classical programming techniques require laborious translation of the human-generated data interpretation methodology. Alternatively, machine learning techniques are effective at producing such models if sufficient data is available. For this research project, we fabricated over 6000 vertical PiN GaN diodes across 10 wafers. Using low resolution wafer scale optical profilometry data taken before fabrication, we successfully trained four different machine learning models. All models predict device pass and fail with 70–75% accuracy, and the wafer yield can be predicted within 15% error on the majority of wafers.

36 MATERIALS SCIENCE↗

Proton Radiation Tolerance of Wide and Narrow Band Gap Perovskite Solar Cells

Two different single junction mixed organic-inorganic halide perovskite solar cells (PSCs) were assessed for their tolerance to high energy proton radiation. Both the narrow band gap mixed tin-lead iodide and wide band gap lead iodide-bromide show remarkable tolerance for fluences up to 1x10 11 p/cm 2 . Both materials show a retention of open circuit voltage and decrease in dark current densities indicating minimal effect on SRH recombination that typically plagues traditional III-V based solar cells. Additionally, a control device that was processed without the perovskite absorber layer showed better diode characteristics and lower dark current densities after proton irradiation. The tolerance of these perovskite as a class of materials is promising for multijunction tandem flexible photovoltaic devices.

perovskite↗

Heavily doped transparent-emitter regions in junction solar cells, diodes, and transistors

The paper presents an analytical treatment of transparent-emitter devices, particularly solar cells, that is more complete than previously available treatments. The proposed approach includes the effects of bandgap narrowing, Fermi-Dirac statistics, built-in field due to impurity profile, and a finite surface recombination velocity at the emitter surface. It is demonstrated that the transparent-emitter model can predict experimental values of Voc observed on n(plus)-p thin diffused junction silicon solar cells made on low-resistivity (0.1 ohm-cm) substrates. A test is included for the self-consistent validity of the transparent-emitter model. This test compares the calculated transit time of minority carriers across the emitter with the Auger-impact minority-carrier lifetime within the emitter region.

Shibib, M. A.↗

Investigation of a GaAlAs Mach-Zehnder electro-optic modulator

A GaAs modulator operating at 0.78 to 0.88 micron wavelength has the potential to be integrated with a GaAs/GaAlAs laser diode for an integrated fiber-optic transmitter. A travelling-wave Mach-Zehnder modulator using the electro-optic effect of GaAs and operating at a wavelength of 0.82 microns has been investigated for the first time. A four layer Strip-loaded ridge optical waveguide has been analyzed using the effective index method and single mode waveguides have been designed. The electro-optic effect of GaAs has also been analyzed and a modulator using the geometry producing the maximum phase shift has been designed. A coplanar transmission line structure is used in an effort to tap the potentially higher bandwidth of travelling-wave electrodes. The modulator bandwidth has been calculated at 11.95 GHz with a required drive power of 2.335 Watts for full intensity modulation. Finally, some preliminary experiments were performed to characterize a fabrication process for the modulator.

Materna, David M.↗

Evaluation of a satellite laser ranging technique using pseudonoise code modulated laser diodes

Several types of Satellite Laser Ranging systems exist, operating with pulsed, high-energy lasers. The distance between a ground point and an orbiting satellite can be determined to within a few centimeters. A new technique substitutes pseudonoise code modulated laser diodes, which are much more compact, reliable and less costly, for the lasers now used. Since laser diode technology is only now achieving sufficiently powerful lasers, the capabilities of the new technique are investigated. Also examined are the effects of using an avalanche photodiode detector instead of a photomultiplier tube. The influence of noise terms (including background radiation, detector dark and thermal noise and speckle) that limit the system range and performance is evaluated.

Ball, Carolyn Kay↗

Plasma deposited silicon nitride for indium phosphide encapsulation

The composition and the annealing characteristics of plasma-deposited silicon-nitride encapsulating films on the ion-implanted InP substrates were investigated, using two different substrate-cleaning procedures (organic solvents and HF or HIO3 solutions) prior to encapsulation. The effect of plasma deposition of silicon nitride on the InP substrates was assessed through the current-voltage characteristics of Schottky diodes. Results of XPS analyses showed that the cleaning procedure that employed HF solution left less oxygen on the InP surface than the procedure involving HIO3. No chemical interaction between the film and the substrate was observed before or after annealing.

Valco, G. J.↗

Slot clock recovery in optical PPM communication systems with avalanche photodiode photodetectors

Slot timing recovery in a direct-detection optical PPM communication system can be achieved by processing the photodetector output waveform with a nonlinear device whose output forms the input to a phase-locked loop. The choice of a simple transition detector as the nonlinearity is shown to give satisfactory synchronization performance. The rms phase error of the recovered slot clock and the effect of slot timing jitter on the bit error probability were directly measured. The experimental system consisted of an AlGaAs laser diode (wavelength = 834 nm) and a silicon avalanche photodiode photodetector. The system used Q = 4 PPM signaling and operated at a source data rate of 25 Mbits/s. The mathematical model developed to compute the rms phase error of the recovered clock is shown to be in good agreement with results of actual measurements of phase errors. The use of the recovered slot clock in the receiver resulted in no significant degradation in receiver sensitivity compared to a system with perfect slot timing. The system achieved a bit error probability of 10 to the -6th at a received optical signal energy of 55 detected photons per information bit.

Davidson, Frederic M.↗

Comparison of Non-Parabolic Hydrodynamic Simulations for Semiconductor Devices

Parabolic drift-diffusion simulators are common engineering level design tools for semiconductor devices. Hydrodynamic simulators, based on the parabolic band approximation, are becoming more prevalent as device dimensions shrink and energy transport effects begin to dominate device characteristic. However, band structure effects present in state-of-the-art devices necessitate relaxing the parabolic band approximation. This paper presents simulations of ballistic diodes, a benchmark device, of Si and GaAs using two different non-parabolic hydrodynamic formulations. The first formulation uses the Kane dispersion relationship in the derivation of the conservation equations. The second model uses a power law dispersion relation {(hk)(exp 2)/2m = xW(exp Y)}. Current-voltage relations show that for the ballistic diodes considered. the non-parabolic formulations predict less current than the parabolic case. Explanations of this will be provided by examination of velocity and energy profiles. At low bias, the simulations based on the Kane formulation predict greater current flow than the power law formulation. As the bias is increased this trend changes and the power law predicts greater current than the Kane formulation. It will be shown that the non-parabolicity and energy range of the hydrodynamic model based on the Kane dispersion relation are limited due to the binomial approximation which was utilized in the derivation.

Smith, A. W.↗

High-Speed Nonpolar InGaN/GaN Superluminescent Diode With 2.5 GHz Modulation Bandwidth

We demonstrate a superluminescent diode fabricated on a nonpolar m-plane GaN substrate by employing a linearly tapered waveguide design. A high electrical -3dB modulation bandwidth ( f\n 3dB \n) of 2.5 GHz at a current density of 30 kA/cm\n 2 \n is achieved. The high modulation bandwidth is attributed to the shorter carrier recombination lifetime, the linear gain curve in the nonpolar m-plane quantum wells, and the ability to operate at high current densities while effectively suppressing lasing. We derive a general expression for the -3dB bandwidth as a function of current density for SLDs using a similar approach to that for laser diodes. The -3dB bandwidth of a nonpolar superluminescent diode increases exponentially with current density. The experimental results are consistent with the derived expression for f\n 3dB \n vs. current density.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗