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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 487 records · Page 27
All sourcesNASA NTRSDOE OSTI
NASA NTRS2026

Long-Term Evaluation of Landsat 9 Oli Data Product Uniformity at Focal Plane Module-Boundaries Using Earth Scenes

The uniformity performance characteristic in remote sensing data products is a metric that helps evaluate how an image accurately represents radiometric responses to geophysical variability at the Earth’s surface or within the atmosphere. These uniformity attributes are used in Earth remote sensing science applications such as investigating water quality, land-cover/land-use classifications, and crop health assessments. To ensure these applications perform effectively, it is crucial to maintain and regularly assess the uniformity of calibrated remote sensing data products. In the Landsat missions, data from the onboard radiometric reference Solar diffuser device are used as the standard approach to derive the calibration parameters, ensuring the maintenance of both absolute radiance and radiometric uniformity through quarterly updates. This publication presents an alternative approach that leverages Earth scene data to assess the on-orbit uniformity performance of the Landsat 9 (L9) mission. The analysis characterizes uniformity at a specific set of spatial positions (the focal-plane boundary zones) that are intrinsic to the Operational Land Imager (OLI) focal plane design. By employing these Earth data statistics, the article further explores the temporal trends in the radiometric uniformity results. The results shown in this article demonstrate that for pushbroom imaging design systems with staggered sensor chip focal plane architectures, the co-registered pixels, i.e., overlapping measurements of the same ground target viewed by different detectors, offer a self-contained mechanism for assessing product uniformity. Remarkably, this alternative approach achieves a level of radiometric quality comparable to that delivered by a stable, well-characterized onboard Solar diffuser calibration device. The findings demonstrate the potential and capability of such Earth scene statistics in maintaining radiometric uniformity in calibrated data products to better than 1% (1-sigma) throughout the mission’s operational lifetime.

trend↗
DOE OSTI2024

Benchmarking characterization methods for noisy quantum circuits

Effective methods for characterizing the noise in quantum computing devices are essential for programming and debugging circuit performance. Existing approaches vary in the information obtained as well as the amount of quantum and classical resources required, with more information generally requiring more resources. Here we benchmark the characterization methods of gate set tomography, Pauli channel noise reconstruction, and empirical direct characterization for developing models that describe noisy quantum circuit performance on a 27-qubit superconducting transmon device. We evaluate these models by comparing the accuracy of noisy circuit simulations with the corresponding experimental observations. Here, we find that the agreement of noise model to experiment does not correlate with the information gained by characterization and that the underlying circuit strongly influences the best choice of characterization approach. Empirical direct characterization scales best of the methods we tested and produced the most accurate characterizations across our benchmarks.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2022

High Temperature Optocoupler for 3D High Density Power Modules

The goal of this proposed research is to develop a reliable high-temperature optocouplers, which can operate at 250°C with at least ten-year lifetime, and replace isolation transforms as the galvanic isolation solution for the 3D integration of high density power modules. The electrification of future transportations (i.e., electric vehicles) will continuously drive the demand for high density power modules. Optocouplers (i.e., packaged light emitter and detector) as a promising candidate to replace bulky isolation transformers are highly desirable to facilitate the continuous scale-down of gate driver circuitry that will lead to 3D high density power modules and achieve disruptive performance in terms of thermal management, power density, power efficiency, reliability and operating environments. However, regular semiconductor optoelectronic materials and devices have significant difficulty functioning in the harsh environments designated for high density power module usage (such as operation at high temperatures). Ultimately, it is not the intrinsic properties of power devices that prevent their use at higher temperatures, but rather the low voltage electronics needed to drive them and the packaging that surrounds them. The typical operating temperature for optocouplers is only up to 100°C, due to the limitations of light emitting diode (LED) devices inside and packaging materials. A systematic characterization methodology will be developed to analyze the performance, lifetime and reliability of LED devices and distinguish multiple failure mechanisms at high temperatures. An original methodology of “design for reliability” will be developed to design the optoelectronic devices with high reliability and long lifetime at high temperatures. A new architecture of high temperature high reliable optocouplers will be developed, fabricated and demonstrated with continuous operating at 250°C. The development of efficient, reliable high density 3D power modules is the foundation for energy efficiency and energy reliability. Enabled with advanced 3D integration and packaging technologies, high density power module solutions can achieve much more superior performance over the conventional discrete solutions in terms of efficiency, thermal management and power density. The proposed concept of high temperature optocouplers as the galvanic isolation solution for high density power modules will bring together interdisciplinary research involving the wide bandgap materials, optoelectronics, high reliable device design, electronics packaging and power modules. A streamline of skilled personnel would be trained including graduate and undergraduate students, local engineers and scientists which are in great demand to both academia and optoelectronics industry. The proposed research topics, such as, solid state lighting and high temperature device reliability, are currently of major interest at the Department of Energy, in particular, Sandia National Laboratories. This project can enhance collaborations between the University of Arkansas (UA) and Sandia National Laboratories. The findings of the proposed research are expected to be integrated into high density 3-D power modules at the Engineering Research Center for Power Optimization for Electro-Thermal Systems (POETS).

42 ENGINEERING↗
DOE OSTI2021

Shear-free mixing to achieve accurate temporospatial nanoscale kinetics through scanning-SAXS: ion-induced phase transition of dispersed cellulose nanocrystals

Time-resolved in situ characterization of well-defined mixing processes using small-angle X-ray scattering (SAXS) is usually challenging, especially if the process involves changes of material viscoelasticity. In specific, it can be difficult to create a continuous mixing experiment without shearing the material of interest; a desirable situation since shear flow both affects nanoscale structures and flow stability as well as resulting in unreliable time-resolved data. Here, we demonstrate a flow-focusing mixing device for in situ nanostructural characterization using scanning-SAXS. Given the interfacial tension and viscosity ratio between core and sheath fluids, the core material confined by sheath flows is completely detached from the walls and forms a zero-shear plug flow at the channel center, allowing for a trivial conversion of spatial coordinates to mixing times. With this technique, the time-resolved gel formation of dispersed cellulose nanocrystals (CNCs) was studied by mixing with a sodium chloride solution. It is observed how locally ordered regions, so called tactoids, are disrupted when the added monovalent ions affect the electrostatic interactions, which in turn leads to a loss of CNC alignment through enhanced rotary diffusion. The demonstrated flow-focusing scanning-SAXS technique can be used to unveil important kinetics during structural formation of nanocellulosic materials. However, the same technique is also applicable in many soft matter systems to provide new insights into the nanoscale dynamics during mixing.

36 MATERIALS SCIENCE↗
NASA NTRS2019

Characterization and Failure Analysis of 650 V Enhancement-Mode GaN HEMT for Cryogenically-Cooled Power Electronics

In order to evaluate the feasibility of newly developed GaN devices in a cryogenically-cooled converter, this paper characterizes a 650 V enhancement-mode Gallium-Nitride high-electron-mobility transistor (GaN HEMT) at cryogenic temperatures. The characterization includes both static and dynamic behaviors. The results show that this GaN HEMT is an excellent device candidate to be applied in cryogenic-cooled applications. For example, transconductance at cryogenic temperature (93 K) is 2.5 times higher than one at room temperature (298 K), and accordingly, peak di/dt during turn-on transients at cryogenic temperature is around 2 times of that at room temperature. Moreover, the on-resistance of the channel at cryogenic temperature is only one-fifth of that at room temperature. The corresponding explanations of performance trends at cryogenic temperatures are also given from the view of semiconductor physics. In addition, several device failures were observed during the dynamic characterization of GaN HEMTs at cryogenic temperatures. The ultra-fast switching speed induced high di/dt and dv/dt at cryogenic temperatures amplifies the negative effects of parasitics inside the switching loop. Based on failure waveforms, two failure modes were classified, and detailed failure mechanisms caused by ultra-fast switching speed are given in this paper.

Static and dynamic characterization↗
NASA NTRS1994

Experiments on the flow field physics of confluent boundary layers for high-lift systems

The use of sub-scale wind tunnel test data to predict the behavior of commercial transport high lift systems at in-flight Reynolds number is limited by the so-called 'inverse Reynolds number effect'. This involves an actual deterioration in the performance of a high lift device with increasing Reynolds number. A lack of understanding of the relevant flow field physics associated with numerous complicated viscous flow interactions that characterize flow over high-lift devices prohibits computational fluid dynamics from addressing Reynolds number effects. Clearly there is a need for research that has as its objective the clarification of the fundamental flow field physics associated with viscous effects in high lift systems. In this investigation, a detailed experimental investigation is being performed to study the interaction between the slat wake and the boundary layer on the primary airfoil which is known as a confluent boundary layer. This little-studied aspect of the multi-element airfoil problem deserves special attention due to its importance in the lift augmentation process. The goal of this research is is to provide an improved understanding of the flow physics associated with high lift generation. This process report will discuss the status of the research being conducted at the Hessert Center for Aerospace Research at the University of Notre Dame. The research is sponsored by NASA Ames Research Center under NASA grant NAG2-905. The report will include a discussion of the models that have been built or that are under construction, a description of the planned experiments, a description of a flow visualization apparatus that has been developed for generating colored smoke for confluent boundary layer studies and some preliminary measurements made using our new 3-component fiber optic LDV system.

Nelson, Robert C.↗
DOE OSTI2025

Harvesting Subsea Water Motion to Provide Clean Electrical Power

This TEAMER project had three main objectives related to characterizing the performance of a vortex-induced vibration (VIV) marine energy harvesting device called the Whatever Input To Torsion (WITT). The first was to characterize the motion of the WITT device as it vibrates on top of a pipe in a natural tidal flow. The second was to measure how much electricity the WITT device generates when it is deployed on top of a pipe that is secured to the seabed with a lander. The third objective was to measure how much electricity the WITT device generates in the same configuration but with a longer pipe. This TEAMER project succeeded in satisfying the first objective by measuring the motion of the WITT device with an inertial measurement unit (IMU) mounted in the WITT housing. The motion was described by examining changes in the acceleration, pitch, roll, and yaw, and displacement. The frequency of the motion was characterized using spectral analysis. The TEAMER project succeeded in reaching the second objective by measuring the power produced by the WITT. It is reported here as the average and maximum power in hourly intervals. WITT Energy decided to not have us pursue the third objective of testing a longer pipe because the first test was unexpectedly successful at having the system vibrate at the target frequency. A longer pipe would have resulted in a decreased frequency and therefore not have been a useful test. Based on these findings, the decision was made to keep the same pipe length for both tests and improve on other aspects of the test structure that had failed during the first test. The key finding of this TEAMER project is that the WITT is capable of generating electricity in moderate flow speeds when it is in a housing that is attached to a 2.5 m pipe and secured to the seabed by a lander. This report contains the first power values for a VIV instrument that generates electricity from a pendulum swinging at the top of a long pipe. The experiment demonstrated that the vibration frequency of the device varied with the tidal current speed, which changed throughout a given tidal cycle. This meant that the desired peak frequency was not sustained for more than one hour. The success of this TEAMER test provides evidence that continued research in the area of electricity generation from VIV holds promise as a source of marine energy for offshore applications. Future tests should focus on refining the pipe length equations and improving the power take off system of the WITT power electronics. In addition, experiments aimed at expanded testing and evaluation (e.g. longer than one month) are needed to measure the power production at higher tidal current speeds and test the system's durability.

Branch, Ruth A. (ORCID:0000000202356719)↗
DOE OSTI2026

Buried Interfaces in Organic Photocathodes for H 2 Evolution: Fermi-Level Pinning and Recombination

Herein, we demonstrate how Fermi-level pinning at buried contacts impacts solar fuel generation in all-polymer photocathodes by systematically comparing the effects of work function, hydroxyl coverage, and hydrogen evolution using chemically modified indium tin oxide (ITO) supports. Photovoltages and net photocathode performance are improved when the ITO is passivated using phosphonic acids, independent of work function, suggesting that the passivation reduces Fermi-level pinning at the buried interface arising from blended heterojunction interactions with surface metal hydroxyls. Transient photovoltage decay reveals differences in recombination mechanisms, supported by light intensity-dependent measurements. Briefly, nonpassivated, hydrophilic contacts exhibit trap-assisted recombination, while passivated, hydrophobic contacts follow bimolecular recombination. We then investigate changes in electroactivity of hole-transfer processes as a function of scan rate and repetitive cycling using a diffusion-controlled molecular redox probe, analogous to a hole-only device achieved via the electrolyte. The nonpassivated buried contacts exhibit higher overpotentials for oxidation, indicative of hole injection/extraction barriers. We observe irreversible electron transfer via the hole-transport level of the blended heterojunction and a strong cycle dependence, consistent with changes in the hole trap state density. Passivation results in more reversible redox behaviors, consistent with more Ohmic-like contacts. Collectively, these results provide context toward the realization of durable organic photoelectrodes with optimized photovoltages and net solar-to-hydrogen conversion efficiencies via fundamental understanding of the rates of carrier generation, recombination, and transport in high-dielectric aqueous environments and opportunities to characterize buried interfaces under device-relevant electric fields.

buried interfaces↗
DOE OSTI2024

Advanced Data Science Model for Detecting Intelligent Malware

This study focused on developing a robust artificial intelligence (AI) model capable of detecting and characterizing advanced malware in Internet of Things (IoT) devices using network data. By analyzing network traffic with various machine learning (ML) models, our AI model can identify and characterize malicious activities to significantly improve malware detection accuracy and reliability as compared to traditional methods. The developed AI/ML model was trained using network data from IoT devices, leveraging classifiers such as Random Forest, Gradient Boosting, AdaBoost, and others to optimize detection performance. This project demonstrates a scalable framework for real-time malware detection and characterization in IoT networks, capable of identifying infected devices and facilitating the necessary steps to remove or isolate them, thereby preventing further infections. Although digital twin (DT) integration is not yet implemented in the current model, it represents a promising future enhancement. By creating a virtual replica of physical IoT devices, DT technology would allow for real-time monitoring and analysis without directly accessing operational technology, thus reducing the risk of compromising or reducing the performance of actual devices. This integration would further enhance the security of IoT ecosystems, combining AI technology to better flag and detect indications of malware-infected devices within a nuclear system environment.

42 ENGINEERING↗
DOE OSTI2026

Non -degenerate marginal-likelihood calibration with application to quantum characterization

Here, we propose a marginal likelihood strategy within the Kennedy-O’Hagan (KOH) Bayesian framework, where a Gaussian process (GP) models the discrepancy between a physical system and its simulator. Our approach introduces a novel marginalized likelihood by integrating out the degenerate eigenspace of the covariance matrix, rather than approximating the original likelihood. Unlike approximation methods that compromise accuracy for computational efficiency, our method defines an exact likelihood—distinct from the original but preserving all relevant information. This formulation achieves computational efficiency and stability, even for large datasets where the covariance matrix nears degeneracy. Applied to the characterization of a superconducting quantum device at Lawrence Livermore National Laboratory, the approach enhances the predictive accuracy of the Lindblad master equations for modeling Ramsey measurement data by effectively quantifying uncertainties consistent with the quantum data.

general physics↗
DOE OSTI2025

Quantum optimal control of superconducting qubits based on machine-learning characterization

Implementing fast and high-fidelity quantum operations using open-loop quantum optimal control relies on having an accurate model of the quantum dynamics. Any deviations between this model and the complete dynamics of the device, such as the presence of spurious modes or pulse distortions, can degrade the performance of optimal controls in practice. Here, we propose an experimentally simple approach to realize optimal quantum controls tailored to the device parameters and environment while specifically characterizing this quantum system. Concretely, we use physics-inspired machine learning to infer an accurate model of the dynamics from experimentally available data and then optimize our experimental controls on this trained model. We show the power and feasibility of this approach by optimizing arbitrary single-qubit operations in detailed numerical simulations of a superconducting transmon qubit. Furthermore, we demonstrate that this framework produces an accurate description of the device dynamics under arbitrary controls, together with the precise pulses achieving arbitrary single-qubit gates with a high fidelity of ∼99.99%.

Artificial neural networks↗
DOE OSTI2025

Predicting Trends in VOC Through Rapid, Multimodal Characterization of State-of-the-Art p-i-n Perovskite Devices

Perovskite photovoltaic technologies are approaching commercial deployment, yet single junction and tandem architectures both still have significant room to improve power conversion efficiency and stability. The ability to perform rapid screening of material quality after altering processing conditions is critical to accelerating the optimization and commercialization of perovskite-based technologies. Currently, researchers utilize a wide range of stand-alone metrology tools to isolate sources of power loss throughout a device stack, which can be slow and labor intensive. Here, we demonstrate the use of a multimodal metrology approach to rapidly determine the maximum achievable and predicted open circuit voltages of >100 perovskite devices during fabrication. Acquisition of these different data is facilitated by combining them into a single integrated measurement platform. We show that these data and automated analysis can be used to rapidly understand and ultimately predict quantitative trends in open circuit voltages of state-of-the-art device architectures. The data and automated analysis workflow presented provides a reliable approach to quickly identify absorber and charge transport layer combinations that can lead to improved open circuit voltages.

14 SOLAR ENERGY↗
NASA NTRS1995

Growth and characterization of crystals for room temperature I.R. detectors and second harmonic generation devices

One of the major objectives of this program was to modify the triglycine sulfate (TGS) crystals with suitable dopants and variants to achieve better pyroelectric properties and improved infrared detectivities (D(sup *)), and higher Curie transition temperature compared to undoped TGS crystals. Towards these objectives, many promising dopants, both inorganic and organic, were investigated in the last few years. These dopants gave significant improvement in the D(sup *) value of the infrared detectors fabricated from the grown crystals with no significant increase in the Curie temperature (49 C). The IR detectors were fabricated at EDO/Barnes Engineering Division, Shelton, CT. In the last one year many TGS crystals doped with urea were grown using the low temperature solution crystal growth facility. It is found that doping with urea, the normalized growth yield increased significantly compared to pure TGS crystals and there is an improvement in the pyroelectric and dielectric constant values of doped crystals. This gave a significant increase in the materials figure of merits. The Vicker's hardness of 10 wt percent urea doped crystals is found to be about three times higher in the (010) direction compared to undoped crystals. This report describes in detail the results of urea doped TGS crystals.

Lal, R. B.↗
NASA NTRS1998

Fabrication and Characterization of Thin Film Ion Implanted Composite Materials for Integrated Nonlinear Optical Devices

Ion implantation has been shown to produce a high density of metal colloids within the layer regions of glasses and crystalline materials. The high-precipitate volume fraction and small size of metal nanoclusters formed leads to values for the third-order susceptibility much greater than those for metal doped solids. This has stimulated interest in use of ion implantation to make nonlinear optical materials. On the other side, LiNbO3 has proved to be a good material for optical waveguides produced by MeV ion implantation. Light confinement in these waveguides is produced by refractive index step difference between the implanted region and the bulk material. Implantation of LiNbO3 with MeV metal ions can therefore result into nonlinear optical waveguide structures with great potential in a variety of device applications. We describe linear and nonlinear optical properties of a waveguide structure in LiNbO3-based composite material produced by silver ion implantation in connection with mechanisms of its formation.

Sarkisov, S.↗
NASA NTRS2007

Growth and Characterization of 3C-SiC and 2H-AIN/GaN Films and Devices Produced on Step-Free 4H-SiC Mesa Substrates

While previously published experimental results have shown that the step-free (0 0 0 1) 4H-SiC mesa growth surface uniquely enables radical improvement of 3C-SiC and 2H-AlN/GaN heteroepitaxial film quality (greater than 100-fold reduction in extended defect densities), important aspects of the step-free mesa heterofilm growth processes and resulting electronic device benefits remain to be more fully elucidated. This paper reviews and updates recent ongoing studies of 3C-SiC and 2H-AlN/GaN heteroepilayers grown on top of 4H-SiC mesas. For both 3C-SiC and AlN/GaN films nucleated on 4H-SiC mesas rendered completely free of atomic-scale surface steps, TEM studies reveal that relaxation of heterofilm strain arising from in-plane film/substrate lattice constant mismatch occurs in a remarkably benign manner that avoids formation of threading dislocations in the heteroepilayer. In particular, relaxation appears to occur via nucleation and inward lateral glide of near-interfacial dislocation half-loops from the mesa sidewalls. Preliminary studies of homojunction diodes implemented in 3C-SiC and AlN/GaN heterolayers demonstrate improved electrical performance compared with much more defective heterofilms grown on neighbouring stepped 4H-SiC mesas. Recombination-enhanced dislocation motion known to degrade forward-biased 4H-SiC bipolar diodes has been completely absent from our initial studies of 3C-SiC diodes, including diodes implemented on defective 3C-SiC heterolayers grown on stepped 4H-SiC mesas.

Neudeck, P. G.↗
DOE OSTI2024

Nanoscale Probing of Electrical Memory Effects in van der Waals Layered PdSe 2

Tunable electronic materials that can be switched between different impedance states are fundamental to the hardware elements for neuromorphic computing architectures. This “brain-like” computing paradigm uses highly paralleled and colocated data processing, leading to greatly improved energy efficiency and performance compared to traditional architectures in which data have to be frequently transferred between processor and memory. In this work, we use scanning microwave impedance microscopy for nanoscale electrical and electronic characterization of two-dimensional layered semiconductor PdSe 2 to probe neuromorphic properties. The local resolution of tens of nanometers reveals significant differences in electronic behavior between and within PdSe 2 nanosheets (NSs). In particular, we detected both n-type and p-type behaviors, although previous reports only point to ambipolar n-type dominating characteristics. Nanoscale capacitance–voltage curves and subsequent calculation of characteristic maps revealed a hysteretic behavior originating from the creation and erasure of Se vacancies as well as the switching of defect charge states. In addition, stacks consisting of two NSs show enhanced resistive and capacitive switching, which is attributed to trapped charge carriers at the interfaces between the stacked NSs. Stacking n- and p-type NSs results in a combined behavior that allows one to tune electrical characteristics. In conclusion, as local inhomogeneities of electrical and electronic behavior can have a significant impact on the overall device performance, the demonstrated nanoscale characterization and analysis will be applicable to a wide range of semiconducting materials.

2D material↗
NASA NTRS1993

Germanium blocked-impurity-band detector arrays - Unpassivated devices with bulk substrates

We have fabricated and characterized six-element monolithic arrays of Ge:Ga blocked-impurity-band detectors, with threshold wavelength 220 microns, peak quantum efficiency 14 percent, detective quantum efficiency 9 percent, dark current 300 e(-)/s, and response uniformity better than 4 percent. The devices are described very well by the standard model of blocked-impurity-band detectors and appear to satisfy many of the requirements of low-background astronomical instruments.

Watson, Dan M.↗