Long-range magnetic order in hydroxide-layer-doped (Li[subscript 1;#8722;x;#8722;y]FexMn[subscript y]OD)FeSe
Abstract not provided
Wilfong, Brandon↗
SEARCH · Engineering Papers
Results for “chalcogenide”
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Buffer-layer-controlled nickeline vs zinc-blende/wurtzite-type MnTe growths on c -plane Al 2 O 3 substrates
In the recent past, MnTe has proven to be a crucial component of the intrinsic magnetic topological insulator (IMTI) family [MnTe] m [Bi2Te 3 ] n , which hosts a wide range of magneto-topological properties depending on the choice of m and n. However, bulk crystal growth allows only a few combinations of m and n for these IMTIs due to the strict limitations of the thermodynamic growth conditions. One way to overcome this challenge is to utilize atomic layer-by-layer molecular beam epitaxy (MBE) technique, which allows arbitrary sequences of [MnTe]m and [Bi 2 Te 3 ] n to be formed beyond the thermodynamic limit. For such MBE growth, finding optimal growth templates and conditions for the parent building block, MnTe, is a key requirement. Here, we report that two different hexagonal phases of MnTe - nickeline (NC) and zinc-blende/wurtzite (ZB-WZ) structures, with distinct in-plane lattice constants of 4.20 ± 0.04 Å and 4.39 ± 0.04 Å, respectively - can be selectively grown on c-plane Al 2 O 3 substrates using different buffer layers and growth temperatures. Moreover, we provide the first comparative studies of different MnTe phases using atomic-resolution scanning transmission electron microscopy and show that ZB and WZ-like stacking sequences can easily alternate between the two. Surprisingly, In 2 Se 3 buffer layer, despite its lattice constant (4.02 Å) being closer to that of the NC phase, fosters the ZB-WZ instead, whereas Bi 2 Te 3 , sharing the same lattice constant (4.39 Å) with the ZB-WZ phase, fosters the NC phase. Furthermore, these discoveries suggest that lattice matching is not always the most critical factor determining the preferred phase during epitaxial growth. Overall, this will deepen our understanding of epitaxial growth modes for chalcogenide materials and accelerate progress toward new IMTI phases as well as other magneto-topological applications.
36 MATERIALS SCIENCE↗
Republished: Colossal density-driven resistance response in the negative charge transfer insulator MnS 2
The Mn chalcogenides show a remarkable variation in structural and physical properties with density. In MnS 2 we observe a pronounced difference with the effects of varying hydrostaticity with pressure inducing a structural transition at 300 K. Within the pyrite phase, a colossal electrical resistance drop of 10 8 Ohms is observed by 12 GPa of nonhydrostatic compression at 300 K. DFT simulations reveal the metallization to be unexpectedly driven by previously unoccupied S$^{2-}_2$ σ$^*_{3p}$ antibonding states crossing the Fermi level. This is a seldom seen variant of the charge transfer insulator to metal transition for negative charge transfer insulators which have anions with an unsaturated valence. Finally, by 36 GPa of nonhydrostatic compression, the single presence of the low-spin insulating arsenopyrite (P2 1 /c) phase is confirmed, and the bulk metallicity is broken with the system returning to an insulative electronic state.
36 MATERIALS SCIENCE↗
Atomic dynamics in 𝑀Cr𝑋 2 (𝑀=Ag, Cu; 𝑋 = S, Se) across magnetic and superionic transitions
Here, a systematic study of atomic dynamics and thermal properties of the family of layered chalcogenide compounds 𝑀Cr𝑋 2 (𝑀= Ag, Cu; 𝑋 = S, Se) was performed, including neutron and x-ray scattering, thermal characterization, and first-principles simulations. In all compounds, we observe a breakdown of specific phonon modes across the superionic phase transition, for phonons whose eigenvectors exhibit large contributions of mobile ions. In particular, the nondispersive portions of transverse acoustic (TA) branches at short-wavelengths and the low-energy optical phonons with large contributions from Ag + or Cu + become severely damped in the superionic phase. However, well-defined quasiparticles persist in the superionic state for long-wavelength TA phonons. In the case of AgCrS 2 , the coupling of lattice dynamics with its antiferromagnetic transition was also investigated. The magnetic ordering couples with the monoclinic–rhombohedral structural transition, and the Cr 3+ spin arrangement strongly affects the phonon dispersions. We qualitatively reproduce the magnetic and nuclear components of the INS measurement for antiferromagnetic AgCrS 2 by combining models of spin-waves and spin-polarized first-principles phonon simulations. Quasielastic magnetic fluctuations persist in the paramagnetic phase up to high temperature, but are clearly distinguished from the nuclear component through their momentum dependence. Finally, we report measurements of the thermal properties of the selenide compounds and find good agreement with our DFT simulations.
36 MATERIALS SCIENCE↗
Recent Advancements in Reconfigurable mmWave Devices Based on Phase-Change and Metal Insulator Transition Materials
Chalcogenide Phase Change Materials (PCM) and metal insulator transition (MIT) materials are a group of materials that are capable of switching between low resistance and high resistance states. These emerging materials have been widely used in optical storage media and memory devices. Over the past recent years, there have been interests in exploiting the PCM and MIT materials, especially germanium antimony telluride (GST) alloys and vanadium dioxide (VO 2 ), for radio frequency (RF) applications. The PCM and MIT-based RF devices are expected to bridge the gap between semiconductor switches and microelectromechanical system (MEMS) switches as they combine the low insertion loss performance of MEMS technology and the small size and reliability performance of semiconductor technology. This article presents an overview of the PCM and MIT materials for RF circuits and discusses the recent advancements in reconfigurable millimeter-wave (mmWave) devices based on PCM and MIT materials in depth.
36 MATERIALS SCIENCE↗
Simple thermal vapor deposition process for and characterization of n-type indium oxysulfide thin films
The search continues for alternative nontoxic n-type electron transport layers in optoelectronic thin-film devices. Indium oxysulfide, In 2 (O,S) 3 , represents one promising material for this application, especially when paired with chalcogenide absorber layers. The ternary nature of the composition allows for electrical conductivity and optical bandgap tuning by tailoring the sulfur to oxygen ratio in the oxysulfide alloy. However, thin films of In 2 (O,S) 3 are typically deposited only by chemical bath deposition or plasma-enhanced atomic layer deposition. Here we report deposition of thin films of In 2 (O,S) 3 in a custom-built thermal reactor using only water vapor and hydrogen sulfide as the coreactants. This advance is enabled by the use of a recently reported, highly reactive indium formamidinate precursor. As shown by x-ray photoelectron spectroscopy, the composition can be tuned from pure In 2 (O,S) 3 to pure In 2 S 3 by varying the ratio of cycles employing water or hydrogen sulfide. The oxygen to the sulfur ratio in the film can be controlled by altering the dose sequence, although films typically contain more sulfur than would be expected naively from the percentage of hydrogen sulfide doses in the deposition recipe. Rutherford backscattering spectrometry confirms the composition is sulfur-rich relative to the dosing ratio. Structural characterization indicates films are relatively amorphous in nature. Electrically, these films offer reasonably constant electron mobility at different O:S ratios, with an electron concentration tunable over 4 orders of magnitude. These oxysulfide films possess a higher indirect bandgap than their oxygen-free indium sulfide counterparts, indicating higher transmittance to blue light. These indium oxysulfide films may be suitable candidates for electron transport layers in thin-film solar cells where their wider bandgap might result in higher optical transparency and thus short circuit current density, while the tunability of their conduction band offset with an absorber layer may result in higher open circuit voltage.
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
Desorption characteristics of selenium and tellurium thin films
The temperature-dependent desorption behavior of selenium and tellurium is investigated using a heated quartz crystal microbalance. Prior to heating the quartz crystal microbalance, selenium and tellurium films with varying thickness were deposited using thermal effusion cells in a molecular beam epitaxy system for subsequent determination of temperature-dependent mass loss of the deposited films. The desorption rate for tellurium was found to exhibit one sharp peak around 190°C, indicating the loss of the entire film irrespective of film thickness within a temperature window of 20°C, which was completely evaporated at 200°C. Similar experiments for selenium revealed that the thermal desorption took place via a two-stage process with a smaller portion of the material desorbing within an even narrower temperature window of 5°C at a much lower peak temperature of 65°C, while most selenium desorbed within a temperature range of 10°C around 90°C. This two-stage behavior indicated the presence of at least two chemically distinct selenium species or binding states. The direct and quantitative determination of the chalcogen desorption process provides important insights into the kinetics of chalcogenide-based film growth and is in addition of applied benefit to the research community in the area of Se/Te capping and decapping of air sensitive materials as it provides temperature ranges and rates at which full desorption is achieved. Our work furthermore points toward the need for a more detailed understanding of the chemical composition state of atomic and molecular beams supplied from thermal evaporation sources during growth.
36 MATERIALS SCIENCE↗
Analysis of nickel sulfoselenide materials by XPS
Metal chalcogenides are of interest as electrocatalysts, battery materials, and more. XPS is a valuable tool for studying changes to these materials before and after catalysis, making reference spectra for the pristine materials valuable. Here, we present XPS spectra for a family of nickel sulfoselenide (NiSSe) materials based on the Ni 3 X 2 crystal structure, Ni 3 S 2-x Se x . XPS surveys and high-resolution spectra of Ni 2p, S 2p, S 2s, Se 3d, Se 3p, and Se 3s were recorded using Al K α radiation.
36 MATERIALS SCIENCE↗
Solid-phase heteroepitaxy of oriented Sb 2 Se 3 on GaAs for birefringent thin films
Here, we investigate the amorphous-to-crystalline transformation of antimony selenide (Sb 2 Se 3 ) on UHV-prepared GaAs (001) substrates. In the bulk orthorhombic form, Sb 2 Se 3 is a layered quasi-1D semiconductor with highly anisotropic properties of interest for optical and electronic devices. We find that an amorphous layer deposited by molecular beam epitaxy annealed at or above 230 °C yields a textured-epitaxial structure among some randomly oriented domains. The textured-epitaxial Sb 2 Se 3 grains are oriented with the covalently bonded “1D axis” constrained in-plane to GaAs [110] and with multiple van der Waals (hk0) orientations out-of-plane. The same texture was achieved exclusively without randomly oriented grains using continuous-wave laser radiation, highlighting the use of thermal and optical methods to yield anisotropic crystalline Sb 2 Se 3 films directly from the amorphous phase. Polarized reflectance and polarized microscopy confirm the unique state of in-plane birefringence in the crystallized thin film. Overall, we show that solid-phase heteroepitaxy provides additional pathways to the integration of low-symmetry chalcogenide semiconductors for demanding applications where the inherent anisotropy needs to be preserved.
Xiao, Kelly [Stanford Univ., CA (United States)] (↗
Zero-energy bound states in the high-temperature superconductors at the two-dimensional limit
Majorana zero modes (MZMs) that obey the non-Abelian statistics have been intensively investigated for potential applications in topological quantum computing. The prevailing signals in tunneling experiments “fingerprinting” the existence of MZMs are the zero-energy bound states (ZEBSs). However, nearly all of the previously reported ZEBSs showing signatures of the MZMs are observed in difficult-to-fabricate heterostructures at very low temperatures and additionally require applied magnetic field. Here, by using in situ scanning tunneling spectroscopy, we detect the ZEBSs upon the interstitial Fe adatoms deposited on two different high-temperature superconducting one-unit-cell iron chalcogenides on SrTiO 3 (001). The spectroscopic results resemble the phenomenological characteristics of the MZMs inside the vortex cores of topological superconductors. Our experimental findings may extend the MZM explorations in connate topological superconductors toward an applicable temperature regime and down to the two-dimensional (2D) limit.
Science & Technology - Other Topics↗
Out-of-plane ferroelectricity and robust magnetoelectricity in quasi-two-dimensional materials
Thin-film ferroelectrics have been pursued for capacitive and nonvolatile memory devices. They rely on polarizations that are oriented in an out-of-plane direction to facilitate integration and addressability with complementary metal-oxide semiconductor architectures. The internal depolarization field, however, formed by surface charges can suppress the out-of-plane polarization in ultrathin ferroelectric films that could otherwise exhibit lower coercive fields and operate with lower power. Here, we unveil stabilization of a polar longitudinal optical (LO) mode in the n = 2 Ruddlesden–Popper family that produces out-of-plane ferroelectricity, persists under open-circuit boundary conditions, and is distinct from hyperferroelectricity. Our first-principles calculations show the stabilization of the LO mode is ubiquitous in chalcogenides and halides and relies on anharmonic trilinear mode coupling. We further show that the out-of-plane ferroelectricity can be predicted with a crystallographic tolerance factor, and we use these insights to design a room-temperature multiferroic with strong magnetoelectric coupling suitable for magneto-electric spin-orbit transistors.
36 MATERIALS SCIENCE↗
Synthesis of LaWN 3 nitride perovskite with polar symmetry
Perovskite structured materials have a variety of uses as photovoltaics, capacitors, and micromechanical actuators, along with other applications. Oxides, halides, and chalcogenides all have large numbers of perovskite structured materials. Examples of perovskite nitrides are conspicuously absent, but Talley et al managed to synthesize one (see the Perspective by Hong). Lanthanum tungsten nitride in the perovskite structure turns out to be piezoelectric, which is ideal for a variety of applications. Perovskite structured nitrides are very attractive because they could easily integrate with the large number of nitride-based semiconducting devices already in use.
36 MATERIALS SCIENCE↗
Interface-induced superconductivity in magnetic topological insulators
The interface between two different materials can show unexpected quantum phenomena. Here, in this study, we used molecular beam epitaxy to synthesize heterostructures formed by stacking together two magnetic materials, a ferromagnetic topological insulator (TI) and an antiferromagnetic iron chalcogenide (FeTe). We observed emergent interface-induced superconductivity in these heterostructures and demonstrated the co-occurrence of superconductivity, ferromagnetism, and topological band structure in the magnetic TI layer—the three essential ingredients of chiral topological superconductivity (TSC). The unusual coexistence of ferromagnetism and superconductivity is accompanied by a high upper critical magnetic field that exceeds the Pauli paramagnetic limit for conventional superconductors at low temperatures. These magnetic TI/FeTe heterostructures with robust superconductivity and atomically sharp interfaces provide an ideal wafer-scale platform for the exploration of chiral TSC and Majorana physics.
36 MATERIALS SCIENCE↗
Electron Transfer from Semiconductor Nanocrystals to Redox Enzymes
This review summarizes progress in understanding electron transfer from photoexcited nanocrystals to redox enzymes. The combination of the light-harvesting properties of nanocrystals and the catalytic properties of redox enzymes has emerged as a versatile platform to drive a variety of enzyme-catalyzed reactions with light. Transfer of a photoexcited charge from a nanocrystal to an enzyme is a critical first step for these reactions. This process has been studied in depth in systems that combine Cd-chalcogenide nanocrystals with hydrogenases. The two components can be assembled in close proximity to enable direct interfacial electron transfer or integrated with redox mediators to transport charges. Time-resolved spectroscopy and kinetic modeling have been used to measure the rates and efficiencies of the electron transfer. Electron transfer has been described within the framework of Marcus theory, providing insights into the factors that can be used to control the photochemical activity of these biohybrid systems. The range of potential applications and reactions that can be achieved using nanocrystal–enzyme systems is expanding, and numerous fundamental and practical questions remain to be addressed.
Chemistry↗
Recent progress in realizing novel one-dimensional polymorphs via nanotube encapsulation
Encapsulation of various materials inside nanotubes has emerged as an effective method in nanotechnology that facilitates the formation of novel one-dimensional (1D) structures and enhances their functionality. Because of the effects of geometrical confinement and electronic interactions with host nanotubes, encapsulated materials often exhibit low-dimensional polymorphic structures that differ from their bulk forms. These polymorphs exhibit unique properties, including altered electrical, optical, and magnetic behaviors, making them promising candidates for applications in electronics, energy storage, spintronics, and quantum devices. This review explores recent advancements in the encapsulation of a wide range of materials such as organic molecules, elemental substances, metal halides, metal chalcogenides, and other complex compounds. In particular, we focus on novel polymorphs formed through the geometrical confinement effect within the nanotubes. The atomic structure, other key properties, and potential applications of these encapsulated materials are discussed, highlighting the impact of nanotube encapsulation on their functionalities.
77 NANOSCIENCE AND NANOTECHNOLOGY↗
Optical, electrical, and EPR studies of polycrystalline Al:Cr:ZnSe gain elements
Transition metal-doped II-VI (TM:II-VI) chalcogenides are well-known laser materials for optically pumped middle-infrared lasers. Cr:ZnSe is a key representative of this class of transition metal doped II-VI gain media and is arguably considered the material of choice for optically pumped middle-infrared lasers. In addition to effective mid-IR lasing under optical excitation, these crystals, being wide-band semiconductors, hold the potential for direct electrical excitation. One way to form n-type conductivity in ZnSe crystals is by annealing them in a melt of Zn-Al alloy. However, this annealing of Cr:ZnSe crystals results in their purification and transfer of chromium to the melt of Zn-Al alloy. In this article, we report on optimizing the doping technique for providing n-type conductivity in Al:Cr:ZnSe crystals while preserving the chromium concentration. Al:Cr:ZnSe samples with resistivities ranging from 10.8 to 992 Ω-cm were fabricated. While the 2 + valence state of Cr is typically dominant in Cr:ZnSe, both Cr 2+ and Cr + were detected in Al:Cr:ZnSe samples. The maximum level of Cr + concentration was measured to be 4 × 10 18 cm -3 .
36 MATERIALS SCIENCE↗
Structural diversity among multinary pnictide oxides: a minireview focused on semiconducting and superconducting heteroanionic materials
Incorporating different anions with varied ionic sizes and charges is a rapidly growing approach to bring out unusual physical properties among various classes of solid-state materials, pnictides and chalcogenides in particular. This minireview is focused on hetero-anionic materials based on the pnictogens, which have been demonstrated to offer an impressive diversity of crystal chemistry and electronic structures. In addition, many pnictide oxides or oxypnictides, over the course of the last decade, have been shown to exhibit a broad spectrum of superconducting, magnetic, and semiconducting properties. However, the structural diversity of the mixed-anion materials is far greater than the several known structure types, or their variants, of the well-known layered superconductive materials. Therefore, with this treatise, we aim to provide a comprehensive overview of the crystal chemistry of pnictide oxides by recounting almost 40 different structures of such ternary and multinary compounds. In addition to the structural aspects, we also highlight some of the challenges associated with the synthesis, and briefly summarize reported, to date, physical properties of this remarkable class of solids.
crystal structure↗
Extracting information from X-ray diffraction patterns containing Laue oscillations
The presence of Laue oscillations in a film grown on a solid surface is broadly taken as indicating a high quality, crystallographically aligned film of the targeted compound. In this paper we briefly review the origins of both Laue oscillations and Kiessig fringes and show how they can be used together to determine if extra thickness exists above or below the coherently diffracting domains. The differences between experimental and “ideal” films are discussed and the effect of structural features (roughness, different thickness coherently diffracting domains and thickness in addition to the coherently diffracting domains) are illustrated with experimental and simulated data for metal and mixed-metal chalcogenide films of titanium, bismuth, vanadium/iron, and bismuth/molybdenum. Examples are given showing how quantitative information can be extracted from experimental diffraction patterns.
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗