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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 487 records · Page 27
All sourcesNASA NTRSDOE OSTI
DOE OSTI2010

Micro- and nanostructures in lithium niobate single crystals doped with lanthanides

Lithium niobate single crystals doped with lanthanides (Gd, Er) and nominally pure single crystals of congruent and stoichiometric compositions have been grown under time-dependent thermal conditions. Regular growth domain microstructures and periodic nanostructures have been investigated by optical microscopy and atomic force microscopy with a step from 10 to 100 nm. Comparative investigations of the Raman spectra of lithium niobate single crystals of different compositions have been performed.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2019

Effect of InAs quantum dots capped with GaAs on atomic-scale ordering in Ga 0.5 In 0.5 P

The CuPt ordering of the group III elements in Ga x In 1-x P ( x ≃ 0.5) has been observed to vary during growth by metalorganic vapor-phase epitaxy of InAs quantum dots capped with GaAs in a GaInP matrix. While ordering is not affected by the insertion of a GaAs layer, the growth of InAs quantum dots capped with GaAs results in ordered, partially ordered, or fully disordered GaInP. We show that the degree of ordering depends on the deposition time of the InAs quantum dots and on the thickness of the GaAs capping layer. Our results indicate that disordered GaInP occurs in the presence of excess indium at the growth surface, which results from the growth of strained InAs quantum dots. Ordering resumes when the excess indium is consumed. Cathodoluminescence, scanning transmission electron microscopy, and atomic force microscopy are used in this study to correlate the electronic properties and the microstructure of the thin films.

Atomic force microscopy↗
DOE OSTI2022

Unusual flat and extended morphology of intercalated Cu under MoS 2

We report a general method was developed to intercalate metals under layered materials through a controlled density of sputtered defects. The method has already been applied to study a range of metals intercalated under graphite, and different types of morphologies were realized. In the current work, we extend the method to the study of intercalation under MoS 2 , noting that work on this system is rather limited. We use Cu as the prototype metal for comparison with Cu intercalation under graphite. Although the growth conditions needed for intercalation under graphite and MoS 2 are similar, the type of intercalated phases is very different. Each Cu island that nucleates on top of MoS 2 during Cu deposition provides material that is transferred below MoS 2 through sputtered defects under the island base; this transfer results in a uniform intercalated Cu “carpet” morphology that extends over the mesoscale. On the contrary, Cu intercalation under graphite results in well separated, compact islands formed by monomer detachment from small Cu islands on top and transfer below through defects far from the islands. The structural techniques (scanning electron microscopy and atomic force microscopy) and spectroscopic techniques (x-ray photoelectron spectroscopy and energy-dispersive spectroscopy) are used for the characterization of the intercalated Cu layer.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2011

Laser ablation of polymer coatings allows for electromagnetic field enhancement mapping around nanostructures

Subdiffraction spatially resolved, quantitative mapping of strongly localized field intensity enhancement on gold nanostructures via laser ablation of polymer thin films is reported. Illumination using a femtosecond laser scanning microscope excites surface plasmons in the nanostructures. The accompanying field enhancement substantially lowers the ablation threshold of the polymer film and thus creates local ablation spots and corresponding topographic modifications of the polymer film. Such modifications are quantified straightforwardly via scanning electron microscopy and atomic force microscopy. Thickness variation in the polymer film enables the investigation of either the initial ablation phase or ablation induced by collective enhancement effects.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Correlation of shape changes of grain surfaces and reversible stress evolution during interruptions of polycrystalline film growth

Short interruptions of the growth of polycrystalline films often lead to stress evolution that is reversed when growth is resumed. Correlated in situ stress measurements and ex situ transmission electron microscopy and atomic force microscopy characterizations of grain boundary surface grooves as a function of the interruption time are reported for films deposited at different temperatures and held for different times before quenching to room temperature. These studies suggest that during film deposition surface grooves at grain boundaries are kinetically constrained to be shallow, while during a growth interruption surface diffusion allows grain boundary grooves to deepen and approach their equilibrium depth. The latter relieves a component of the compressive stress associated with trapped atoms in the grain boundaries. When growth is resumed, the non-equilibrium surface morphology is reestablished and the compressive stress increases to its pre-interruption value.

36 MATERIALS SCIENCE↗
DOE OSTI2013

Study of the influence of strained superlattices introduced into a metamorphic buffer on the electrophysical properties and the atomic structure of InAlAs/InGaAs MHEMT heterostructures

The results of studying the influence of strained superlattices introduced into a metamorphic buffer on the electrophysical properties and atomic crystal structure of In{sub 0.70}Al{sub 0.30}As/In{sub 0.76}Ga{sub 0.24}As/In{sub 0.70}Al{sub 0.30}As metamorphic high-electron-mobility transistor (MHEMT) nanoheterostructures on GaAs substrates are presented. Two types of MHEMT structures are grown by molecular beam epitaxy, namely, one with a linear increase in x in the In{sub x}Al{sub 1-x}As metamorphic buffer, and the second with two mismatched superlattices introduced inside the metamorphic buffer. The electrophysical and structural parameters of the grown samples are studied by the van der Pauw method, transmission electron microscopy (including scanning and high-resolution microscopy), atomic-force microscopy, and energy dispersive X-ray analysis. It is revealed that the introduction of superlattices into a metamorphic buffer substantially improves the electrophysical and structural characteristics of MHEMT structures.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Effect of cobalt doping on the mechanical properties of ZnO nanowires

In this work, we investigate the influence of doping on the mechanical properties of ZnO nanowires (NWs) by comparing the mechanical properties of pure and Co-doped ZnO NWs grown in similar conditions and having the same crystallographic orientation [0001]. The mechanical characterization included three-point bending tests made with atomic force microscopy and cantilever beam bending tests performed inside scanning electron microscopy. It was found that the Young's modulus of ZnO NWs containing 5% of Co was approximately a third lower than that of the pure ZnO NWs. Bending strength values were comparable for both materials and in both cases were close to theoretical strength indicating high quality of NWs. Dependence of mechanical properties on NW diameter was found for both doped and undoped ZnO NWs. - Highlights: •Effect of Co doping on the mechanical properties of ZnO nanowires is studied. •Co substitutes Zn atoms in ZnO crystal lattice. •Co addition affects crystal lattice parameters. •Co addition results in significantly decreased Young's modulus of ZnO. •Bending strength for doped and undoped wires is close to the theoretical strength.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Synthesis, characterization and electrostatic properties of WS{sub 2} nanostructures

We report the direct growth of atomically thin WS{sub 2} nanoplates and nanofilms on the SiO{sub 2}/Si (300 nm) substrate by vapor phase deposition method without any catalyst. The WS{sub 2} nanostructures were systematically characterized by optical microscopy, scanning electron microscopy, Raman microscopy and atomic force microscopy. We found that growth time and growth temperature play important roles in the morphology of WS{sub 2} nanostructures. Moreover, by using Kelvin probe force microscopy, we found that the WS{sub 2} nanoplates exhibit uniform surface and charge distributions less than 10 mV fluctuations. Our results may apply to the study of other transition metal dichalcogenides by vapor phase deposition method.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Non-toxic novel route synthesis and characterization of nanocrystalline ZnS{sub x}Se{sub 1−x} thin films with tunable band gap characteristics

Highlights: • A simple, inexpensive, and non-toxic CBD route is used to deposit ZnS thin films. • The ZnS{sub x}Se{sub 1−x} thin films formation takes place via annealing of ZnS thin films in Se atmosphere. • S/(S + Se) ratio found to be temperature dependent and easy tuning of band gap has been done by Se atom deposition. - Abstract: An environmentally benign chemical bath deposition (CBD) route was employed to deposit zinc sulfide (ZnS) thin films. The CBD-ZnS thin films were further selenized in a furnace at various temperatures viz. 200, 300, 400, and 500 °C and the S/(S + Se) ratio was found to be dependent on the annealing temperature. The effects of S/(S + Se) ratio on the structural, compositional and optical properties of the ZnS{sub x}Se{sub 1−x} (ZnSSe) thin films were investigated. EDS analysis showed that the S/(S + Se) ratio decreased from 0.8 to 0.6 when the film annealing temperature increased from 200 to 500 °C. The field emission scanning electron microscopy and atomic force microscopy studies showed that all the films were uniform, pin hole free, smooth, and adhered well to the glass substrate. The X-ray diffraction study on the ZnSSe thin films showed the formation of the cubic phase, except for the unannealed ZnSSe thin film, which showed an amorphous phase. The X-ray photoelectron spectroscopy revealed Zn-S, Zn-Se, and insignificant Zn-OH bonds formation from the Zn 2p{sub 3/2}, S 2p, Se 3d{sub 5/2}, and O 1s atomic states, respectively. The ultraviolet–visible spectroscopy study showed ∼80% transmittance in the visible region for all the ZnSSe thin films having various absorption edges. The tuning of the band gap energy of the ZnSSe thin films was carried out by selenizing CBD-ZnS thin films, and as the S/(S + Se) ratio decreased from 0.8 to 0.6, the band gap energy decreased from 3.20 to 3.12 eV.

36 MATERIALS SCIENCE↗
DOE OSTI2011

Femtosecond laser crystallization of amorphous Ge

Ultrafast crystallization of amorphous germanium (a-Ge) in ambient has been studied. Plasma enhanced chemical vapor deposition grown a-Ge was irradiated with single femtosecond laser pulses of various durations with a range of fluences from below melting to above ablation threshold. Extensive use of Raman scattering has been employed to determine post solidification features aided by scanning electron microscopy and atomic force microscopy measurements. Linewidth of the Ge optic phonon at 300 cm{sup -1} as a function of laser fluence provides a signature for the crystallization of a-Ge. Various crystallization regimes including nanostructures in the form of nanospheres have been identified.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Surface chemistry of a Cu(I) beta-diketonate precursor and the atomic layer deposition of Cu{sub 2}O on SiO{sub 2} studied by x-ray photoelectron spectroscopy

The surface chemistry of the bis(tri-n-butylphosphane) copper(I) acetylacetonate, [({sup n}Bu{sub 3}P){sub 2}Cu(acac)] and the thermal atomic layer deposition (ALD) of Cu{sub 2}O using this Cu precursor as reactant and wet oxygen as coreactant on SiO{sub 2} substrates are studied by in-situ x-ray photoelectron spectroscopy (XPS). The Cu precursor was evaporated and exposed to the substrates kept at temperatures between 22 °C and 300 °C. The measured phosphorus and carbon concentration on the substrates indicated that most of the [{sup n}Bu{sub 3}P] ligands were released either in the gas phase or during adsorption. No disproportionation was observed for the Cu precursor in the temperature range between 22 °C and 145 °C. However, disproportionation of the Cu precursor was observed at 200 °C, since C/Cu concentration ratio decreased and substantial amounts of metallic Cu were present on the substrate. The amount of metallic Cu increased, when the substrate was kept at 300 °C, indicating stronger disproportionation of the Cu precursor. Hence, the upper limit for the ALD of Cu{sub 2}O from this precursor lies in the temperature range between 145 °C and 200 °C, as the precursor must not alter its chemical and physical state after chemisorption on the substrate. Five hundred ALD cycles with the probed Cu precursor and wet O{sub 2} as coreactant were carried out on SiO{sub 2} at 145 °C. After ALD, in-situ XPS analysis confirmed the presence of Cu{sub 2}O on the substrate. Ex-situ spectroscopic ellipsometry indicated an average film thickness of 2.5 nm of Cu{sub 2}O deposited with a growth per cycle of 0.05 Å/cycle. Scanning electron microscopy and atomic force microscopy (AFM) investigations depicted a homogeneous, fine, and granular morphology of the Cu{sub 2}O ALD film on SiO{sub 2}. AFM investigations suggest that the deposited Cu{sub 2}O film is continuous on the SiO{sub 2} substrate.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Growth of LiNbO{sub 3}:Er Crystals and concentration dependences of their properties

A series of lithium niobate (LiNbO{sub 3}) crystals of congruent and stoichiometric compositions, doped with erbium, have been grown under non-steady-state thermal conditions. A series of LiNbO{sub 3}:Zn crystals, nominally pure LiNbO{sub 3} crystals of congruent and stoichiometric compositions, and a LiNbO{sub 3}:B crystal have also been grown. Both growth conditions and concentration dependences of physicochemical, ferroelectric, and structural characteristics of LiNbO{sub 3}:Er crystals are investigated. The growth regular domain microstructures and periodic nanostructures in LiNbO{sub 3}:Er crystals are analyzed by optical microscopy and atomic force microscopy (AFM). A comparative study of the optical homogeneity and photorefractive properties of LiNbO{sub 3}:Er crystals of congruent and stoichiometric compositions and the Raman spectra of LiNbO{sub 3} crystals of different compositions is performed.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Thin films of the spin ice compound Ho{sub 2}Ti{sub 2}O{sub 7}

The pyrochlore compounds Ho{sub 2}Ti{sub 2}O{sub 7} and Dy{sub 2}Ti{sub 2}O{sub 7} show an exotic form of magnetism called the spin ice state, resulting from the interplay between geometrical frustration and ferromagnetic coupling. A fascinating feature of this state is the appearance of magnetic monopoles as emergent excitations above the degenerate ground state. Over the past years, strong effort has been devoted to the investigation of these monopoles and other properties of the spin ice state in bulk crystals. Here, we report the fabrication of Ho{sub 2}Ti{sub 2}O{sub 7} thin films using pulsed laser deposition on yttria-stabilized ZrO{sub 2} substrates. We investigated the structural properties of these films by X-ray diffraction, scanning transmission electron microscopy, and atomic force microscopy, and the magnetic properties by vibrating sample magnetometry at 2 K. The films not only show a high crystalline quality, but also exhibit the hallmarks of a spin ice: a pronounced magnetic anisotropy and an intermediate plateau in the magnetization along the [111] crystal direction.

36 MATERIALS SCIENCE↗
DOE OSTI2014

A facile approach to prepare graphene via solvothermal reduction of graphite oxide

Highlights: • Graphene was prepared via a novel and facile solvothermal reduction method for graphite oxide. • Most of the oxygen functional groups of graphite oxide were removed. • The reduced graphene oxide obtained was featured with bilayer nanosheets. - Abstract: In this work, a facile reduction strategy is reported for the fabrication of graphene. Graphite oxide (GO) is reduced via a novel solvothermal reaction in a mixed solution of acetone and sodium hypochlorite (NaClO). The structure, surface chemistry, morphology and thermal stability of the as-prepared reduced graphene oxide (RGO) are characterized by X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR), Raman spectroscopy, transmission electron microscopy (TEM), atomic force microscopy (AFM), thermogravimetric analysis (TGA) and X-ray photoelectron spectroscopy (XPS). The results indicate that most of the oxygenated groups in GO are effectively removed in this solvothermal reaction. The novel reduction method provides a simple, cost-effective and efficient strategy for the fabrication of graphene.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Effects of a modular two-step ozone-water and annealing process on silicon carbide graphene

By combining ozone and water, the effect of exposing epitaxial graphene on silicon carbide to an aggressive wet-chemical process has been evaluated after high temperature annealing in ultra high vacuum. The decomposition of ozone in water produces a number of oxidizing species, however, despite long exposure times to the aqueous-ozone environment, no graphene oxide was observed after the two-step process. The systems were comprehensively characterized before and after processing using Raman spectroscopy, core level photoemission spectroscopy, and angle resolved photoemission spectroscopy together with low energy electron diffraction, low energy electron microscopy, and atomic force microscopy. In spite of the chemical potential of the aqueous-ozone reaction environment, the graphene domains were largely unaffected raising the prospect of employing such simple chemical and annealing protocols to clean or prepare epitaxial graphene surfaces.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2019

Gelatin/Gelatinized Sago Starch Biomembranes as a Drug Delivery System Using Rubber Latex as Plasticizer

Preparation and properties of gelatin and gelatin/gelatinized sago starch biomembranes as a drug delivery system are presented. Deproteinized natural rubber latex (DNRL) was chosen to blend as a plasticizer in biomembranes due to its elasticity. The opaque biomembranes were formed, and the effect of DNRL amounts (10–50 part per hundred of gelatin; phg) on mechanical properties of biomembranes was investigated. It was discovered that increasing the amounts of DNRL could decrease the brittleness of biomembranes. However, these DNRL blended biomembranes still swelled, dissolved in water, and eroded within 2 h. The 50 phg DNRL was further chosen for biomembrane preparations. Then, the 5–30 phg gelatinized sago starch which was prepared in-house was added. These gelatin/gelatinized sago starch biomembranes were homogenous and opaque. They portrayed good water uptake properties, and the highest values occurred in 20–30 min, then these biomembranes eroded slowly. Increasing the amounts of sago starch in biomembranes raised the water uptake rates but reduced the erosion properties. Biomembranes with and without starch blends showed the same tensile strengths. Their elongations at break increased when the amounts of starch were raised but still were lower than that of gelatin/DNRL biomembranes. The morphology, scanning electron microscopy, atomic force electron microscopy, Fourier transform infrared spectroscopy, differential scanning calorimeter, and X-ray diffractometer confirmed the compatibility of ingredients in biomembranes. Lidocaine and its hydrochloride salt were successfully incorporated in these biomembranes with good properties. The drug release and permeation of biomembrane showed good drug controlled release and were able to permeate through the pig skin.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Heteropolytungstate nanoparticles: Microemulsion-mediated preparation and investigation of their catalytic activity in the epoxidation of olefins

Highlights: • Keggin type Q{sub 3}PW{sub 12}O{sub 40} nanoparticles were synthesized by using microemulsion system. • The nanoparticles have uniform size of about 25 nm and spherical morphologies. • The prepared nanoparticles act as reusable catalyst in the epoxidation of olefins with H{sub 2}O{sub 2}. - Abstract: Keggin type Q{sub 3}PW{sub 12}O{sub 40} nanoparticles (Q = cetyltrimethylammonium cation) were synthesized in water-in-oil (w/o) microemulsion consisted of water/cetyltrimethylammonium bromide/n-butanol/isooctane. Reaction of Na{sub 2}WO{sub 4}, Na{sub 2}HPO{sub 4} and hydrochloric acid within water containing nanoreactors of reverse micelles resulted in the preparation of Q{sub 3}PW{sub 12}O{sub 40} nanoparticles. The resultant nanoparticles were analyzed by physicochemical methods such as FT-IR spectroscopy, X-ray diffraction, energy-dispersive X-ray analysis, thermogravimetric analyses (TGA-DTA), scanning and transmission electron microscopy and atomic force microscopy which show nearly uniform spherical nanoparticles with size of about 15 nm. Finally, catalytic activity of the Q{sub 3}PW{sub 12}O{sub 40} nanoparticles was examined in the epoxidation of olefins with H{sub 2}O{sub 2}. The prepared nanoparticles acted as recoverable and reusable catalyst in the epoxidation of olefins with H{sub 2}O{sub 2}.

36 MATERIALS SCIENCE↗
DOE OSTI2012

Epitaxial growth of non-polar m-plane ZnO thin films by pulsed laser deposition

Highlights: ► Unique m-plane ZnO films were deposited on m-plane sapphire substrate by PLD. ► The epitaxial relationship between the film and the substrate was studied. ► The surface morphology showed stripes due to in-plane anisotropy. ► PL spectra showed strong NBE emission and weak deep level emission. -- Abstract: Non-polar ZnO thin films were deposited on m-plane sapphire substrates by pulsed laser deposition at various temperatures from 300 to 700 °C. The effects of growth temperature on surface morphology, structural, electrical, and optical properties of the films were investigated. All the films exhibited unique m-plane orientation indicated by X-ray diffraction and transmission electron microscopy. Based on the scanning electron microscopy and atomic force microscopy, the obtained films had smooth and highly anisotropic surface, and the root mean square roughness was less than 10 nm above 500 °C. The maximum electron mobility was ∼18 cm{sup 2}/V s, with resistivity of ∼0.26 Ω cm for the film grown at 700 °C. Room temperature photoluminescence of the m-plane films was also investigated.

36 MATERIALS SCIENCE↗