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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 487 records · Page 27
All sourcesNASA NTRSDOE OSTI
NASA NTRS1975

Results of the 1973 NASA/JPL balloon flight solar cell calibration program

High altitude balloon flights carried 37 standard solar cells for calibration above 99.5 percent of the earth's atmosphere. The cells were assembled into standard modules with appropriate resistors to load each cell at short circuit current. Each standardized module was mounted at the apex of the balloon on a sun tracker which automatically maintained normal incidence to the sun within 1.0 deg. The balloons were launched to reach a float altitude of approximately 36.6 km two hours before solar noon and remain at float altitude for two hours beyond solar noon. Telemetered calibration data on each standard solar cell was collected and recorded on magnetic tape. At the end of each float period the solar cell payload was separated from the balloon by radio command and descended via parachute to a ground recovery crew. Standard solar cells calibrated and recovered in this manner are used as primary intensity reference standards in solar simulators and in terrestrial sunlight for evaluating the performance of other solar cells and solar arrays with similar spectral response characteristics.

Yasui, R. K.↗
NASA NTRS1978

Production technology for high efficiency ion implanted solar cells

Ion implantation is being developed for high volume automated production of silicon solar cells. An implanter designed for solar cell processing and able to properly implant up to 300 4-inch wafers per hour is now operational. A machine to implant 180 sq m/hr of solar cell material has been designed. Implanted silicon solar cells with efficiencies exceeding 16% AM1 are now being produced and higher efficiencies are expected. Ion implantation and transient processing by pulsed electron beams are being integrated with electrostatic bonding to accomplish a simple method for large scale, low cost production of high efficiency solar cell arrays.

Kirkpatrick, A. R.↗
NASA NTRS1988

A V-grooved GaAs solar cell

V-grooved GaAs solar cells promise the benefits of improved optical coupling, higher short-circuit current, and increased tolerance to particle radiation compared to planar cells. A GaAs homojunction cell was fabricated by etching a V-groove pattern into an n epilayer (2.1 x 10 to the 17th power per cu cm) grown by metalorganic chemical vapor deposition (MOCVD) on an n+ substrate (2.8 x 10 to the 18th power per cu cm) and then depositing and MOCVD p epilayer (4.2 x 10 to the 18th power per cu cm). Reflectivity measurements on cells with and without an antireflective coating confirm the expected decrease in reluctance of the microgrooved cell compared to the planar structure. The short circuit current of the V-grooved solar cell was 13 percent higher than that of the planar control.

Bailey, S. G.↗
DOE OSTI2022

Cost-Efficiency balanced polymer acceptors based on lowly fused Dithienopyrrolo[3, 2b]benzothiadiazole for 16.04% efficiency All-Polymer solar cells

All-polymer solar cells (All-PSCs) attracted increasing attention due to the outstanding thermal stability and mechanical properties. The current prevailing polymer acceptors for most efficient All-PSCs are polymerized high-performance small molecule acceptor of Y6, i.e. the dithienothiopheno[3,2-b]-pyrrolobenzothiadiazole (BTTP) based polymers. However, the BTTP-based polymers often show relatively shallow highest occupied molecular orbital (HOMO) energy level and high figure of merit (FOM), which limit the rational selection of paring donor polymers. Herein, we presented two low-cost polymer acceptors, namely as BTP-T2F and BTP-2T2F, based on lowly fused dithienopyrrolo[3,2b]benzothiadiazole (BTP, removing two thiophene cycles from BTTP). Here the BTP-based polymers exhibited deeper HOMO levels around –5.90 eV, which could match variable donor polymers with low-lying HOMO levels, such as low-cost PTQ10. Additionally, the synthesis was significantly simplified compared to BTTP-based polymers. A power conversion efficiency (PCE) of 14.32% was achieved in binary blend device containing PTQ10:BTP-2T2F. By adding a miscibility-enhancing PBDTCl-TPD as a third component, the top PCE of 16.04% was obtained in ternary blend All-PSCs. Combining the high device performance and low estimated cost, extraordinary cost-efficiency balance was realized within these BTP-based polymer acceptors.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Towards linking lab and field lifetimes of perovskite solar cells

Metal halide perovskite solar cells (PSCs) represent a promising low-cost, thin-film photovoltaic (PV) technology, with unprecedented power conversion efficiencies (PCEs) obtained for both single-junction and tandem applications. To push PSCs toward commercialization, it is critical, albeit challenging, to understand device reliability under real-world outdoor conditions where multiple stress factors (e.g., light, heat, humidity) coexist, generating complicated degradation behaviors. It is necessary to identify accelerated indoor testing protocols - which can correlate specific stressors with observed degradation modes in fielded devices - to quickly guide PSC development. Here, we use a state-of-the-art p-i-n PSC stack (with PCE up to ~25.5%) to show that indoor accelerated stability tests can predict our 6-month outdoor aging tests. Device degradation rates under illumination and at elevated temperatures are most instructive for understanding outdoor device reliability. Further, we also find that the indium tin oxide (ITO)/self-assembled monolayer (SAM)-based hole transport layer (HTL)/perovskite interface most strongly affects our device operation stability. Improving the ion-blocking properties of the SAM HTL increases averaged device operational stability at 50 degree C-85 °C by a factor of ~2.8, reaching over 1000 h at 85 °C and to near 8200 h at 50 °C with a projected 20% degradation, which is among the best to date for high-efficiency p-i-n PSCs.

14 SOLAR ENERGY↗
DOE OSTI2024

Improving Miscibility of Polymer Donor and Polymer Acceptor by Reducing Chain Entanglement for Realizing 18.64 % Efficiency All Polymer Solar Cells

All-polymer solar cells have experienced rapid development in recent years by the emergence of polymerized small molecular acceptors (PSMAs). However, the strong chain entanglements of polymer donors (P D s) and polymer acceptors (P A s) decrease the miscibility of the resulting polymer mixtures, making it challenging to optimize the blend morphology. Herein, we designed three P A s, namely PBTPICm-BDD, PBTPICγ-BDD and PBTPICF-BDD, by smartly using a BDD unit as the polymerized unit to copolymerize with different Y-typed non-fullerene small molecular acceptors (NF-SMAs), thus achieving a certain degree of distortion and giving the polymer system enough internal space to reduce the entanglements of the polymer chains. Such effects increase the chances of the P D being interspersed into the acceptor material, which improve the solubility between the P D and P A . The PBTPICγ-BDD and PBTPICF-BDD displayed better miscibility with PBQx-TCl, leading to a well optimized morphology. As a result, high power conversion efficiencies (PCEs) of 17.50 % and 17.17 % were achieved for PBQx-TCl : PBTPICγ-BDD and PBQx-TCl : PBTPICF-BDD devices, respectively. In conclusion, with the addition of PYFT-o as the third component into PBQx-TCl : PBTPICγ-BDD blend to further extend the absorption spectral coverage and finely tune microstructures of the blend morphology, a remarkable PCE of 18.64 % was realized finally.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Surface reaction for efficient and stable inverted perovskite solar cells

We report perovskite solar cells (PSCs) with an inverted structure (often referred to as the p-i-n architecture) are attractive for future commercialization due to their easily scalable fabrication, reliable operation, and compatibility with a wide range of perovskite-based tandem device architectures. However, the power conversion efficiency (PCE) of p-i-n PSCs falls behind n-i-p (or normal) structure counterparts. This large performance gap could undermine efforts to adopt p-i-n architectures, despite their other advantages. Given the remarkable advances in perovskite bulk materials optimization over the past decade, interface engineering has become the most important strategy to push PSC performance to its limit. Here, we report a reactive surface engineering approach based on a simple post-growth treatment of 3-(Aminomethyl)pyridine (3-APy) on top of a perovskite thin film. First, the 3-APy molecule selectively reacts with surface FA+, reducing perovskite surface roughness and surface potential fluctuations associated with surface steps/terraces. Second, the reaction product on the perovskite surface decreases the formation energy of charged iodine-vacancies, leading to effective n-type doping with a reduced work function in the surface region. With this reactive surface engineering, the resulting p-i-n PSCs obtained a PCE over 25%, along with retaining 87% of the initial PCE after over 2400 h of one-sun operation at about 55 degrees C in air.

14 SOLAR ENERGY↗
NASA NTRS1984

Investigation of accelerated stress factors and failure/degradation mechanisms in terrestrial solar cells

Research on the reliability of terrestrial solar cells was performed to identify failure/degradation modes affecting solar cells and to relate these to basic physical, chemical, and metallurgical phenomena. Particular concerns addressed were the reliability attributes of individual single crystalline, polycrystalline, and amorphous thin film silicon cells. Results of subjecting different types of crystalline cells to the Clemson accelerated test schedule are given. Preliminary step stress results on one type of thin film amorphous silicon (a:Si) cell indicated that extraneous degradation modes were introduced above 140 C. Also described is development of measurement procedures which are applicable to the reliability testing of a:Si solar cells as well as an approach to achieving the necessary repeatability of fabricating a simulated a:Si reference cell from crystalline silicon photodiodes.

Lathrop, J. W.↗
NASA NTRS1988

A V-grooved GaAs solar cell

V-grooved GaAs solar cells promise the benefits of improved optical coupling, higher short-circuit current, and incrased tolerance to particle radiation compared to planar cells. A GaAs homojunction cell was fabricated by etching a V-groove pattern into an n-epilayer (2.1 x 10 to the 17th power per cu cm) grown by metalorganic chemical vapor deposition (MOCVD) on an n+ substrate (2.8 x 10 to the 18th power per cu cm) and then depositing an MOCVD p epilayer (4.2 x 10 to the 18th power per cu cm). Reflectivity measurements on cells with and without an antireflective coating confirm the expected decrease in reflectance of the microgrooved cell compared to the planar structure. The short-circuit current of the V-grooved solar cell was 13 percent higher than that of the planar control.

Bailey, S. G.↗
DOE OSTI2022

Does non-reciprocity break the Shockley–Queisser limit in single-junction solar cells?

The efficiency of single-junction solar cells is bounded by the Shockley–Queisser limit of 41%. However, standard derivation for this limit constrains the system to be reciprocal, and what non-reciprocity can bring for single-junction solar cells remains yet to be clarified. Here, we prove that even with non-reciprocity, the ultimate efficiency of single-junction solar cells is still subject to the Shockley–Queisser limit. Here, we show that the Shockley–Queisser limit does not rely on the detailed balance, but rather is a consequence of the integrated balance between the absorption and emission processes, as required by the second law of thermodynamics.

14 SOLAR ENERGY↗
NASA NTRS1975

Improved Schottky barrier solar cells

Schottky barrier (SB) solar cells have been fabricated for solar energy conversion using GaAs and GaAs 0.78P0.22. Conversion efficiencies of 9% for air mass zero and 12% for terrestrial sun were observed for antireflection coated GaAs0.78P0.22 SB cells. The corresponding efficiencies for GaAs SB cells were 7% and 10%, respectively. These efficiencies are for cells with no interfacial layer effect. The short circuit current density for GaAs SB cells has been improved. The use of an ellipsometer to determine the optimum antireflection coating parameters is illustrated.

Yeh, Y.-C. M.↗
NASA NTRS1988

Characterization of production GaAs solar cells for space

The electrical performance of GaAs solar cells was characterized as a function of irradiation with protons and electrons with the underlying goal of producing solar cells suitable for use in space. Proton energies used varied between 50 keV and 10 MeV, and damage coefficients were derived for liquid phase epitaxy GaAs solar cells. Electron energies varied between 0.7 and 2.4 MeV. Cells from recent production runs were characterized as a function of electron and proton irradiation. These same cells were also characterized as a function of solar intensity and operating temperature, both before and after the electron irradiations. The long term stability of GaAs cells during photon exposure was examined. Some cells were found to degrade with photon exposure and some did not. Calibration standards were made for GaAs/Ge solar cells by flight on a high altitude balloon.

Anspaugh, B. E.↗
DOE OSTI2020

Evaluating Materials Design Parameters of Hole-Selective Contacts for Silicon Heterojunction Solar Cells

Silicon heterojunction (SHJ) solar cell efficiencies are limited by parasitic absorption from the hydrogenated amorphous silicon (a-Si:H) front contact, but this may be mitigated by selecting an alternative carrier selective contact material with a wider band gap. When choosing such a material as the hole-selective contact (“p-layer”), the alignment of the material's valence band edge energy (E VB ) with that of crystalline silicon (c-Si) is an important criterion, but several other material parameters can also influence the band bending at the contact interface. Here, we simulate an (n)c-Si/(i)a-Si:H/p-layer interface to explore the influence of six materials parameters in a variable p-layer on the SHJ performance. We find a strong influence on the fill factor (FF) from thickness, doping, and E VB , and on V OC from the interfacial defect density; notably, optimal E VB is ~ 0.1 eV higher than the valence band edge energy of a-Si:H. Multiparameter sensitivity analyses demonstrate how performance is simultaneously influenced by E VB and doping; thus, both parameters should be optimized alongside one another. To assess the influence of these parameters experimentally, we grow p-type NiO x as a test-case p-layer, which shows that FFs decrease with the oxygen content likely from the increased misalignment of E VB . Although modest efficiencies are achieved experimentally (>7%), what is important is that our model simulates performance trends. With these results, we apply a materials discovery pipeline to suggest new materials (e.g., ZnTe and BeTe) to try as p-layers in the SHJ. This combination of simulations, experiments, and materials discovery informs a better understanding of contact selection in SHJ cells.

14 SOLAR ENERGY↗
NASA NTRS1972

Sheet plastic filters for solar cells

Poly(vinylidene fluoride) (PVF) film protects solar cells on Mars surface from radiation and prevents degradation of solar cell surfaces by Martian dust storms. PVF films may replace glass or quartz windows on solar cell arrays used to generate power on earth.

Wizenick, R. J.↗
NASA NTRS1985

N/P GaAs concentrator solar cells with an improved grid and bushbar contact design

The major requirements for a solar cell used in space applications are high efficiency at AMO irradiance and resistance to high energy radiation. Gallium arsenide, with a band gap of 1.43 eV, is one of the most efficient sunlight to electricity converters (25%) when the the simple diode model is used to calculate efficiencies at AMO irradiance, GaAs solar cells are more radiation resistant than silicon solar cells and the N/P GaAs device has been reported to be more radiation resistant than similar P/N solar cells. This higher resistance is probably due to the fact that only 37% of the current is generated in the top N layer of the N/P cell compared to 69% in the top layer of a P/N solar cell. This top layer of the cell is most affected by radiation. It has also been theoretically calculated that the optimized N/P device will prove to have a higher efficiency than a similar P/N device. The use of a GaP window layer on a GaAs solar cell will avoid many of the inherent problems normally associated with a GaAlAs window while still proving good passivation of the GaAs surface. An optimized circular grid design for solar cell concentrators has been shown which incorporates a multi-layer metallization scheme. This multi-layer design allows for a greater current carrying capacity for a unit area of shading, which results in a better output efficiency.

Desalvo, G. C.↗