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At least 487 records · Page 27

Use of a Mylar filter to eliminate vacuum ultraviolet pulse pileup in low-energy x-ray measurements

We describe a method to reduce vacuum ultraviolet (VUV) pulse pileup (PPU) in x-ray pulse-height Silicon Drift Detector (SDD) signals. An Amptek FAST SDD, with C1 (Si 3 N 4 ) window, measures bremsstrahlung emitted from PFRC-2 plasma to extract the electron temperature (T e ) and density (n e ). The C1 window has low transmissivity for photons with energy below 200 eV though will transmit some VUV and soft x-ray photons, which PFRC-2 plasmas abundantly emit. Multi-VUV-photon PPU contaminates the interpretation of x rays with energy > 100 eV, particularly in a low-energy exponential tail. The predicted low transmissivity of ~1 μm thick Mylar [polyethylene terephthalate (PET)] to photons of energy <100 eV led to the selection of Mylar as the candidate filter to reduce VUV PPU. Experiments were conducted on an x-ray tube with a graphite target and on a quasi-Maxwellian tenuous plasma (n e ~ 10 9 cm –3 ) with effective temperatures reaching 1500 eV. A Mylar filter thickness of 850 nm is consistent with the results. The Mylar-filter-equipped SDD was then used on the PFRC-2 plasma, showing a substantial reduction in the low-energy x-ray signal, supporting our hypothesis of the importance of VUV PPU. Here, we describe the modeling and experiments performed to characterize the effect of the Mylar filter on SDD measurements.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Light-tight Skipper-CCDs for X-Ray Detection in Space

Skipper Charge-Coupled Devices (skipper-CCDs) are pixelated silicon detectors with deep sub-electron resolution. Their radiation hardness and capability to reconstruct energy deposits with unprecedented precision make them a promising technology for space-based X-ray astronomy. In this scenario, optical and near-infrared photons may saturate the sensor, distorting the reconstructed signal. We present a light-tight shield for skipper-CCDs to suppress optical backgrounds while preserving X-ray detection efficiency. We deposited thin aluminum layers on the CCD surface using an e-beam evaporator and evaluated their blinding performance across wavelengths from 650 to 1000 nm using a monochromator, as well as the X-ray transmission using an 55 Fe source. We find that 50 and 100 nm layers provide >99.6% light suppression, with no efficiency loss for 5.9 and 6.4 keV X-rays. In addition, we used Geant4 simulations to extend these results to a broader energy range and quantify the efficiency loss for different aluminum thicknesses. Results show that thin aluminum coatings are an effective, low-cost solution for optical suppression in skipper-CCDs intended for X-ray detection and space instrumentation.

79 ASTRONOMY AND ASTROPHYSICS↗

In Situ Ion Counting for Improved Implanted Ion Error Rate and Silicon Vacancy Yield Uncertainty

An in situ counted ion implantation experiment improving the error on the number of ions required to form a single optically active silicon vacancy (SiV) defect in diamond 7-fold compared to timed implantation is presented. Here, traditional timed implantation relies on a beam current measurement followed by implantation with a preset pulse duration. It is dominated by Poisson statistics, resulting in large errors for low ion numbers. Instead, our in situ detection, measuring the ion number arriving at the substrate, results in a 2-fold improvement of the error on the ion number required to generate a single SiV compared to timed implantation. Through postimplantation analysis, the error is improved 7-fold compared to timed implantation. SiVs are detected by photoluminescence spectroscopy, and the yield of 2.98% is calculated through the photoluminescence count rate. Hanbury–Brown–Twiss interferometry is performed on locations potentially hosting single-photon emitters, confirming that 82% of the locations exhibit single photon emission statistics.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

Superconducting Hot-Electron Submillimeter-Wave Detector

A superconducting hot-electron bolometer has been built and tested as a prototype of high-sensitivity, rapid-response detectors of submillimeter-wavelength radiation. There are diverse potential applications for such detectors, a few examples being submillimeter spectroscopy for scientific research; detection of leaking gases; detection of explosive, chemical, and biological weapons; and medical imaging. This detector is a superconducting-transition- edge device. Like other such devices, it includes a superconducting bridge that has a low heat capacity and is maintained at a critical temperature (T(sub c)) at the lower end of its superconducting-transition temperature range. Incident photons cause transient increases in electron temperature through the superconducting-transition range, thereby yielding measurable increases in electrical resistance. In this case, T(sub c) = 6 K, which is approximately the upper limit of the operating-temperature range of silicon-based bolometers heretofore used routinely in many laboratories. However, whereas the response speed of a typical silicon- based laboratory bolometer is characterized by a frequency of the order of a kilohertz, the response speed of the present device is much higher characterized by a frequency of the order of 100 MHz. For this or any bolometer, a useful figure of merit that one seeks to minimize is (NEP)(tau exp 1/2), where NEP denotes the noise-equivalent power (NEP) and the response time. This figure of merit depends primarily on the heat capacity and, for a given heat capacity, is approximately invariant. As a consequence of this approximate invariance, in designing a device having a given heat capacity to be more sensitive (to have lower NEP), one must accept longer response time (slower response) or, conversely, in designing it to respond faster, one must accept lower sensitivity. Hence, further, in order to increase both the speed of response and the sensitivity, one must make the device very small in order to make its heat capacity very small; this is the approach followed in developing the present device.

Karasik, Boris↗

Tunable and reconfigurable atomically thin heterostructures

Heterocrystals of metal dichalcogenides and Bi 2 S 3 , Bi 2 Se 3 or Bi 2 Te 3 are presented, in which the metal dichalcogenides and Bi 2 S 3 , Bi 2 Se 3 or Bi 2 Te 3 do not largely retain their independent properties. These heterocrystals exhibit electronic and optical changes, which make them attractive for beyond-silicon electronics and optoelectronics. Particularly, these heterocrystals can be re-configured in a manner that allows bit writing and pattern drawing. Embodiments of these heterocrystals, methods of forming these heterocrystals, methods of reconfiguring the heterocrystals, information storage devices, optoelectronic circuits and photonic crystals are presented.

Vargas, Anthony↗

Scintillation light detection in polycrystalline diamond using single photon detectors

Here, this study investigates the scintillation properties of polycrystalline diamond for particle detection applications, particularly in neutron and alpha radiation environments. Polycrystalline diamonds provide a cost-effective alternative to monocrystalline diamonds while retaining essential detection properties. Photoluminescence measurements were performed to analyze emission spectra, revealing distinct characteristics based on impurity content and crystallinity. Scintillation responses were assessed using Silicon Photomultipliers (SiPMs), demonstrating the capability of polycrystalline diamond powders to respond to alpha irradiation, albeit with reduced resolution compared to traditional scintillators. A prototype neutron detector was developed by combining diamond powder with neutron-sensitive 6 LiF, and its performance was evaluated through experimental testing and Geant4 simulations. The findings indicate that polycrystalline diamond-based detectors can achieve significant detection efficiency while remaining insensitive to gamma radiation, offering potential for portable neutron detection applications.

47 OTHER INSTRUMENTATION↗

An integrated photonic engine for programmable atomic control

Abstract Solutions for scalable, high-performance optical control are important for the development of scaled atom-based quantum technologies. Modulation of many individual optical beams is central to applying arbitrary gate and control sequences on arrays of atoms or atom-like systems. At telecom wavelengths, miniaturization of optical components via photonic integration has pushed the scale and performance of classical and quantum optics far beyond the limitations of bulk devices. However, material platforms for high-speed telecom integrated photonics lack transparency at the short wavelengths required by leading atomic systems. Here, we propose and implement a scalable and reconfigurable photonic control architecture using integrated, visible-light modulators based on thin-film lithium niobate. We combine this system with techniques in free-space optics and holography to demonstrate multi-channel, gigahertz-rate visible beamshaping. When applied to silicon-vacancy artificial atoms, our system enables the spatial and spectral addressing of a dynamically-selectable set of these stochastically-positioned point emitters.

Science & Technology - Other Topics↗

Evidence for anti-synergism between ion-assisted etching and in-plasma photoassisted etching of silicon in a high-density chlorine plasma

Etching of p-Si in 60 mTorr 10%Cl2/90%Ar Faraday-shielded inductively coupled high density plasmas was investigated under both ionassisted etching (IAE) and photoassisted etching (PAE) conditions. Real-time etching rates and after-etching Si surface chemical compositions were obtained by laser interferometry and vacuum-transfer x-ray photoelectron spectroscopy (XPS), respectively. Precisely controlled ion energy distributions (IEDs) were generated by applying pulsed negative DC bias on the conductive sample stage. Above a 36 eV threshold at a total flow rate of 250 SCCM, the IAE rate increased with the square root of the ion energy. In contrast to the DC bias, etching under RF bias did not exhibit a threshold ion energy because of the wide IED. XPS spectra revealed that the surface layer under PAE conditions had a significantly lower chlorine content, composed of only SiCl. Under IAE conditions, however, silicon dangling bonds (Si•), SiCl 2 , and SiCl 3 were found on the surface, in addition to SiCl, with a relative abundance of SiCl > SiCl 2 , and SiCl 3 . The absence of higher chlorides and Si• under PAE conditions suggested that vacuum ultraviolet photons and above threshold-energy ions interact with the surface very differently. By varying the duty cycle of the pulsed DC bias, it was found that the IAE rate scaled with the energetic ion dose, but only for low duty cycles. For higher duty cycles, the apparent IAE yield fell off with an increasing Cl coverage on the surface, as the duty cycle went up, which pointed to a negative synergy (antisynergism) between PAE and IAE as the explanation. This antisynergism was further supported by the observed decrease of the total etching rate with an increasing period of the pulsed DC bias. A plausible mechanism is that increasing the pulsing period causes more near-surface damage, creating more recombination centers that lead to a higher loss rate of electron-hole pairs through recombination, thereby reducing the PAE rate.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Characterization of High-Temperature SiPM Noise

Introduction • Background: Silicon photomultipliers (SiPMs) are compact, low-power, and high-efficiency detectors that are increasingly used in radiation detection applications like medical imaging and nuclear safeguards. The have advantages of PMTs because they are smaller, operate at lower voltages, and offer high photon detection efficiency. • Challenges: SiPMs suffer from increased dark count rate (DCR) and optical crosstalk (OCT), which degrades performance. • Purpose of study: This study compares the Advansid ASD-NUV3S-P-40, Broadcom AFBR-S4K33C0147L, and Onsemi MicroFJ-30035-TSVTR under four different temperatures to compare their performance in harsh environments.

Fritchie, Jacob↗

Further characterization of IRAS doped silicon detectors

Measurements made on several doped-silicon detectors are reported. Topics discussed include: Si:Sb detector, the effects of detector bias on dielectric relaxation; characterization of spontaneous noise and gamma-induced spikes and their circumvention; and the time response of two detectors to step changes in the background photon flux density. Several potential system programs are indicated.

Source record↗

Initial astronomical results with a new 5-14 micron Si:Ga 58x62 DRO array camera

A new array camera system was developed using a 58 x 62 pixel Si:Ga (gallium doped silicon) DRO (direct readout) photoconductor array detector manufactured by Hughes/Santa Barbara Research Center (SBRC). The camera system is a broad band photometer designed for 5 to 14 micron imaging with large ground-based optical telescopes. In a typical application a 10 micron photon flux of about 10(exp 9) photons sec(exp -1) m(exp -2) microns(exp -1) arcsec(exp -2) is incident in the telescope focal plane, while the detector well capacity of these arrays is 10(exp 5) to 10 (exp 6) electrons. However, when the real efficiencies and operating conditions are accounted for, the 2-channel 3596 pixel array operates with about 1/2 full wells at 10 micron and 10% bandwidth with high duty cycle and no real experimental compromises.

Gezari, Dan↗

Readout of Large Capacitance SiPMs by Weak Coupling to Charge Sensitive Amplifier

Large area and large capacitance silicon photomultiplier (SiPM) arrays are employed to collect scintillation light in noble liquid time projection chambers (TPC) such as DarkSide, nEXO, MEGII, protoDUNE and DUNE. Light readout using ASICs designed for operation in noble liquids is a solution for large meter-scale photon detectors. However, conventional readout requires a high voltage decoupling capacitor larger than SiPM capacitance (in the range of tens of nF) to achieve full charge transfer to the preamplifier. Here, we demonstrate a readout concept by weakly coupling (via a capacitor lower by an order of magnitude than SiPM capacitance) to a charge sensitive amplifier, LArASIC in this case, without any loss in the signal to noise ratio (S/N). The single-photoelectron detection, signal-to-noise ratio, timing resolution, and coincidence detection are experimentally characterized.

47 OTHER INSTRUMENTATION↗

Sub-2 Kelvin Characterization of Nitrogen-Vacancy Centers in Silicon Carbide Nanopillars

The development of efficient quantum communication technologies depends on the innovation in multiple layers of its implementation, a challenge we address from the fundamental properties of the physical system at the nanoscale to the instrumentation level at the macroscale. We select a promising near-infrared quantum emitter, the nitrogen-vacancy (NV) center in 4H-SiC, and integrate it, at an ensemble level, with nanopillar structures that enhance photon collection efficiency into an objective lens. Moreover, changes in collection efficiency in pillars compared to bulk can serve as indicators of color center orientation in the lattice. To characterize NV center properties at the unprecedented sub-2 K temperatures, we incorporate compatible superconducting nanowire single photon detectors inside the chamber of an optical cryostat and create the ICECAP, the Integrated Cryogenic system for Emission, Collection And Photon detection. ICECAP measurements show no significant line-width broadening of NV ensemble emission and up to 14-fold enhancement in collected emission. With additional filtering, we measure emitter lifetimes of NV centers in a basal ( hk ) and axial ( kk ) orientation, unveiling their cryogenic values of 2.2 and 2.8 ns.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Terahertz Chiral Metamaterials Enabling Broadband Polarization Conversion Using Polarization Guiding Effect

Polarization control plays a vital role in terahertz (THz) photonics, enabling a wide range of applications from imaging and spectroscopy to sensing and wireless communication. However, conventional polarization control methods at THz frequencies are limited by narrow operational bandwidths and excessive absorption losses. In this work, we present a broadband THz polarization control based on the polarization guiding effect. We design and fabricate a THz polarization rotator capable of rotating incident linear polarization by 90°. The device consists of 24 twistingly stacked silicon–air metagrating layers that introduce a large degree of form birefringence, with each metagrating layer being 280 µm thick and sequentially twisted by 3.75°. Numerical simulations using the Berreman 4 × 4 method predict broadband operation of the device. Experimental validation using THz time-domain spectroscopy confirms efficient and broadband 90° polarization rotation from 0.2 to 1.25 THz. Based on this concept, we further propose THz Q-plates for the generation of broadband structured vector beams with radial and azimuthal polarization states. This work offers a scalable, material-agnostic platform for advanced THz polarization manipulation and vector beam engineering, opening new pathways for next-generation THz photonic devices.

36 MATERIALS SCIENCE↗

Setups for eliminating static charge of the ATLAS18 strip sensors

Abstract Construction of the new all-silicon Inner Tracker (ITk), developed by the ATLAS collaboration to beable to track charged particles produced at the High-Luminosity LHC, started in 2020 and is expected tocontinue till 2028. The ITk detector will include 18,000 highly segmented and radiation hard n+-in-psilicon strip sensors (ATLAS18), which are being manufactured by Hamamatsu Photonics. Mechanical and electrical characteristics of produced sensors are measured upon their delivery at several institutes participating in a complex Quality Control (QC) program. The QC tests performed on each individual sensor check the overall integrity and quality of the sensor.During the QC testing of ATLAS18 strip sensors, an increased number of sensors thatfailed the electrical tests was observed. In particular, IV measurements indicated an early breakdown,while large areas containing several tens or hundreds of neighbouring strips with low interstrip isolationwere identified by the Full strip tests, and leakage current instabilities were measured in a long-term leakage current stability setup. Moreover, a high surface electrostatic charge reaching a level of several hundreds of volts per inch was measured on a large number of sensors and on the plastic sheets, whichmechanically protect these sensors in their paper envelopes. Accumulated data indicates a clearcorrelation between observed electrical failures and the sensor charge-up.To mitigate the above-described issues, the QC testing sites significantly modified the sensor handlingprocedures and introduced sensor recovery techniques based on irradiation of the sensor surface with UVlight or application of intensive flows of ionized gas. In this presentation, we will describe the setupsimplemented by the QC testing sites to treat silicon strip sensors affected by static charge andevaluate the effectiveness of these setups in terms of improvement of the sensor performance.

Instruments & Instrumentation↗

An evaluation of an ICCD imager of dynamic range expansion technique and application of insitu procedures for life-time extension

Research toward practical implementation of the Intensified Charge Coupled Device (ICCD) as a photon-counting array detector for astronomy is reported. The first area of concentration was to determine the rate and extent of the lifetime limiting damage to the CCD caused by the impact of high energy electrons, and to find whether various methods of annealing the damage were productive. The second effort was to determine the performance of the ICCD in a photon-counting mode to produce extended dynamic range measurements. There are two main effects that appear as the practical results of the electron damage to the CCD. One is an increase in the leakage current, i.e., the normal thermal generation of charge carriers in the silicon that provides a background dark signal that adds to the light produced image. In an undamaged CCD, the leakage current is usually fairly uniform across the photosensitive area of the silicon chip, with the exception of various bright pixels which have an anomalous leakage current well above the overall level.

Currie, D. G.↗

AMEGO: Exploring the Extreme Multimessenger Universe

The All-sky Medium Energy Gamma-ray Observatory (AMEGO) is a Probe-class mission concept that will provide essential contributions to multimessenger astrophysics in the next decade. AMEGO operates both as a Compton and pair telescope to achieve unprecedented sensitivity between 200 keV and>5 GeV. The instrument consists of four subsystems. A double-sided strip silicon Tracker gives a precise measure of the first Compton scatter interaction and tracks of pair-conversion products. A novel CdZnTe Low Energy Calorimeter with excellent position and energy resolution surrounds the bottom and sides of the Tracker to detect the Compton-scattered photons which enhances the polarization and narrow-line sensitivity. A thick CsI High Energy Calorimeter contains the high-energy Compton and pair events. The instrument is surrounded by aplastic anti-coincidence detector to veto the cosmic-ray background. We have performed detailed simulations to predict the telescope performance and are currently building a prototype instrument. The AMEGO prototype, known as ComPair, will be tested at the High Intensity Gamma-Ray Source in 2021, followed by a balloon flight in Fall of 2022. In this presentation we will give an overview of the science motivation, a description of the observatory, and an update of the prototype instrument development.

Carolyn Ann Kierans↗