Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “Semiconductor”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 487 records · Page 27
All sourcesNASA NTRSDOE OSTI
NASA NTRS1983

Control of mutual phase locking of monolithically integrated semiconductor lasers

The degree of phase locking between the individual laser apertures is the major issue in phase-locked laser arrays. A description is presented of a series of experiments in which the mutual coherence of two laser apertures is characterized by measuring the visibility of the far-field interference fringes. Attention is given to an approach which makes it possible to control continuously the degree of coherence by means of a separate contact configuration. An investigation was conducted of the far-field radiation patterns of pairs of lasers obtained under various conditions. The results of the present study demonstrate the feasibility of controlling the mutual phase locking between semiconductor lasers by varying the gain distribution between their pumped stripes.

Kapon, E.↗
NASA NTRS1983

Position-dependent effective masses in semiconductor theory

A Hamiltonian possessing a position-dependent effective mass is sometimes employed to describe the motion of free carriers (electrons and holes) in semiconductors of nonuniform chemical composition. In the present investigation it is shown that Hamiltonians representative of carriers possessing position-dependent masses are not Galilean invariant, and that approximation schemes which lead to position-dependent mass equations are not unique. The concept of a position-dependent mass should, therefore, be abandoned. von Roos (1982) has shown how to circumvent the difficulties associated with position-dependent masses.

Von Roos, O.↗
NASA NTRS1983

Phase-locked semiconductor laser array with separate contacts

A new monolithic phase-locked semiconductor laser array has been fabricated. Employing two-level metallization, each of the eight elements in the array has a separate contact, thus making it possible to compensate for device nonuniformities and control the near-field and far-field patterns. Threshold currents are approximately 60 mA for each 5-micron-wide laser in the array. Phase locking has been observed via the narrowing of the far-field pattern. Experimental results are compared to those obtained from the same arrays operated with all the lasers connected in parallel.

Katz, J.↗
NASA NTRS1985

Making Cubic Silicon Carbide Semiconductors

Thin buffer layer of SiC minimizes effects of lattice mismatch. Approach consists of growing single-crystal layer of cubic SiC on single-crystal silicon (Si) wafer by chemical-vapor deposition (CVD). Process developed for production of large-area single-crystal wafers of cubic silicon carbide (SiC) for semiconductor devices; also used to make devices themselves. Applications include electronics for high temperature (up to 900 C) and electronics for very high frequencies.

Powell, J.↗
NASA NTRS1984

Development of standardized specifications for screening space level integrated circuits and semiconductors

Standardized methods are established for screening of JAN B microcircuits and JANTXV semiconductor components for space mission or other critical applications when JAN S devices are not available. General specifications are provided which outline the DPA (destructive physical analysis), environmental, electrical, and data requirements for screening of various component technologies. This standard was developed for Air Force Space Division, and is available for use by other DOD agencies, NASA, and space systems contractors for establishing common screening methods for electronic components.

Source record↗
NASA NTRS1983

Flat-plate solar array project: Experimental process system development unit for producing semiconductor-grade silicon using the silane-to-silicon process

The process technology for the manufacture of semiconductor-grade silicon in a large commercial plant by 1986, at a price less than $14 per kilogram of silicon based on 1975 dollars is discussed. The engineering design, installation, checkout, and operation of an Experimental Process System Development unit was discussed. Quality control of scaling-up the process and an economic analysis of product and production costs are discussed.

Source record↗
NASA NTRS1984

The friction behavior of semiconductors Si and GaAs in contact with pure metals

The friction behavior of the semiconductors silicon and gallium arsenide in contact with pure metals was studied. Five transition and two nontransition metals, titanium, tantalum, nickel, palladium, platinum, copper, and silver, slid on a single crystal silicon (111) surface. Four metals, indium, nickel, copper and silver, slid on a single crystal gallium arsenide (100) surface. Experiments were conducted in room air and in a vacuum of 10 to the minus 7th power N/sq cm (10 to the minus 9th power torr). The results indicate that the sliding of silicon on the transition metals exhibits relatively higher friction than for the nontransition metals in contact with silicon. There is a clear correlation between friction and Schottky barrier height formed at the metal silicon interface for the transition metals. Transition metals with a higher barrier height on silicon had a lower friction. The same effect of barrier height was found for the friction of gallium arsenide in contact with metals.

Mishina, H.↗
NASA NTRS1983

Radiation immune RAM semiconductor technology for the 80's

This paper presents current and short term future characteristics of RAM semiconductor technologies which were obtained by literature survey and discussions with cognizant Government and industry personnel. In particular, total ionizing dose tolerance and high energy particle susceptibility of the technologies are addressed. Technologies judged compatible with spacecraft applications are ranked to determine the best current and future technology for fast access (less than 60 ns), radiation tolerant RAM.

Hanna, W. A.↗
NASA NTRS1983

Growth, characterization, and properties of metastable and modulated semiconductor structures - Prospects for future studies

The general field of preparation and study of metastable and modulated semiconductor structures has progressed rapidly in recent years. This short overview offers an assessment of the progress and current understanding in the areas of fabrication, characterization, and utilization of these new material systems. The discussion includes the more prominent growth techniques, theoretical and experimental analysis of growth kinetics, and an overview of structural, chemical, electronic, and optical characterization. The probable application of these structures for the technological development of new device structures and concepts is considered. The discussion particularly emphasizes the prospects for future studies in view of the specific current understanding.

Grunthaner, F. J.↗
NASA NTRS1983

The impact of space research on semiconductor crystal growth technology

Crystal growth experiments in reduced gravity environment and related ground-based research have contributed significantly to the establishment of a scientific basis for semiconductor growth from the melt. NASA-sponsored research has been instrumental in the introduction of heat pipes for heat and mass transfer control in crystal growth and in the development of magnetic field induced melt stabilization, approaches primarily responsible for recent advances in crystal growth technology.

Witt, A. F.↗
NASA NTRS1984

Longitudinal-mode control in integrated semiconductor laser phased arrays by phase velocity matching

The spectrum of semiconductor-laser arrays with separate contacts is investigated. It is demonstrated that the individual laser currents can be selected such that the array operates in a single longitudinal mode, in contrast to the multimode nature of its individual constituents. Moreover, it is possible to tune the lasing frequency by varying the laser currents. Wavelength tuning range of about 50 A, with tuning rate of about 5 A per milliampere, is demonstrated. It is suggested that these spectral features, characteristic of lasers which are coupled in parallel, result from the strong frequency dependence of their spatial mode pattern near the phase-matching frequency of their coupled waveguides.

Kapon, E.↗
NASA NTRS1984

Supermode analysis of phase-locked arrays of semiconductor lasers

The optical characteristics of phase-locked semiconductor laser arrays are formulated in terms of the array supermodes, which are the eigenmodes of the composite-array waveguide, by using coupled-mode theory. These supermodes are employed to calculate the near fields, the far fields, and the difference in the longitudinal-mode oscillation wavelengths of the array. It is shown that the broadening in the far-field beam divergence, as well as the broadening of each of the longitudinal modes that were observed in phase-locked arrays, may arise from the excitation of an increasing number of supermodes at increasing pumping levels.

Kapon, E.↗
NASA NTRS1984

A new FET-bipolar combinational power semiconductor switch

A novel FET-BJT combinational transistor configuration is proposed and demonstrated using discrete devices. This new transistor features fast switching, very simple drive requirement, elimination of reverse bias second breakdown, and good utilization of semiconductor chip area. Initial results indicate that power hybrid construction of the device is essential to enhance the current rating of the device.

Chen, D. Y.↗
NASA NTRS1984

Rate equations analysis of phase-locked semiconductor laser arrays under steady state conditions

Rate equations analysis of phase-locked semiconductor laser arrays has been carried out. It was found that for given (laser) current densities, the photon density distribution in the array elements is that particular one which maximizes the total photon density. The results of this analysis were then combined with the waveguide properties of the laser array waveguide, yielding a basic model of phase-locked diode laser arrays. This model explains the effects of the variation of the current combination through the array elements on its mode structure that were observed recently.

Katz, J.↗
NASA NTRS1986

Producing Silicon Carbide for Semiconductor Devices

Processes proposed for production of SiC crystals for use in semiconductors operating at temperatures as high as 900 degrees C. Combination of new processes produce silicon carbide chips containing epitaxial layers. Chips of SiC first grown on porous carbon matrices, then placed in fluidized bed, where additional layer of SiC grows. Processes combined to yield complete process. Liquid crystallization process used to make SiC particles or chips for fluidized-bed process.

Hsu, G. C.↗
NASA NTRS1986

Measuring Thermal Diffusivity of Molten Semiconductors

Thermal diffusivity of molten and solid mercury cadmium telluride measured with aid of new apparatus. Knowledge gained from such measurements help efforts to grow high-quality single crystals of this semiconductor for use in infrared detectors: Without knowledge of thermal diffusivity, difficult to control growth rate of solid from molten material.

Crouch, R.↗
NASA NTRS1986

Conductive Container for Semiconductor Devices

Container for semiconductor components not only protects them against mechanical damage but ensures they are not harmed by electrostatic discharges. Container holds components in fixed positions so they can be serialized and identified from their locations. Suitable for holding components during both storing and shipping. Originally developed for microwave diodes, container concept readily adaptable to transistors and integrated circuits.

Rice, J. T.↗