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At least 487 records · Page 27
All sourcesNASA NTRSDOE OSTI
DOE OSTI2015

Current-induced spin-orbit torque switching of perpendicularly magnetized Hf|CoFeB|MgO and Hf|CoFeB|TaO{sub x} structures

We study the effect of the oxide layer on current-induced perpendicular magnetization switching properties in Hf|CoFeB|MgO and Hf|CoFeB|TaO{sub x} tri-layers. The studied structures exhibit broken in-plane inversion symmetry due to a wedged CoFeB layer, resulting in a field-like spin-orbit torque (SOT), which can be quantified by a perpendicular (out-of-plane) effective magnetic field. A clear difference in the magnitude of this effective magnetic field (H{sub z}{sup FL}) was observed between these two structures. In particular, while the current-driven deterministic perpendicular magnetic switching was observed at zero magnetic bias field in Hf|CoFeB|MgO, an external magnetic field is necessary to switch the CoFeB layer deterministically in Hf|CoFeB|TaO{sub x}. Based on the experimental results, the SOT magnitude (H{sub z}{sup FL} per current density) in Hf|CoFeB|MgO (−14.12 Oe/10{sup 7} A cm{sup −2}) was found to be almost 13× larger than that in Hf|CoFeB|TaO{sub x} (−1.05 Oe/10{sup 7} A cm{sup −2}). The CoFeB thickness dependence of the magnetic switching behavior, and the resulting H{sub z}{sup FL} generated by in-plane currents are also investigated in this work.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Resistive switching phenomena: A review of statistical physics approaches

Here we report that resistive switching (RS) phenomena are reversible changes in the metastable resistance state induced by external electric fields. After discovery ~50 years ago, RS phenomena have attracted great attention due to their potential application in next-generation electrical devices. Considerable research has been performed to understand the physical mechanisms of RS and explore the feasibility and limits of such devices. There have also been several reviews on RS that attempt to explain the microscopic origins of how regions that were originally insulators can change into conductors. However, little attention has been paid to the most important factor in determining resistance: how conducting local regions are interconnected. Here, we provide an overview of the underlying physics behind connectivity changes in highly conductive regions under an electric field. We first classify RS phenomena according to their characteristic current–voltage curves: unipolar, bipolar, and threshold switchings. Second, we outline the microscopic origins of RS in oxides, focusing on the roles of oxygen vacancies: the effect of concentration, the mechanisms of channel formation and rupture, and the driving forces of oxygen vacancies. Third, we review RS studies from the perspective of statistical physics to understand connectivity change in RS phenomena. We discuss percolation model approaches and the theory for the scaling behaviors of numerous transport properties observed in RS. Fourth, we review various switching-type conversion phenomena in RS: bipolar-unipolar, memory-threshold, figure-of-eight, and counter-figure-of-eight conversions. Finally, we review several related technological issues, such as improvement in high resistance fluctuations, sneak-path problems, and multilevel switching problems.

36 MATERIALS SCIENCE↗
DOE OSTI2015

All-optical switching of magnetoresistive devices using telecom-band femtosecond laser

Ultrafast all-optical switching of the magnetization of various magnetic systems is an intriguing phenomenon that can have tremendous impact on information storage and processing. Here, we demonstrate all-optical switching of GdFeCo alloy films using a telecom-band femtosecond fiber laser. We further fabricate Hall cross devices and electrically readout all-optical switching by measuring anomalous Hall voltage changes. The use of a telecom laser and the demonstrated all-optical switching of magnetoresistive devices represent the first step toward integration of opto-magnetic devices with mainstream photonic devices to enable novel optical and spintronic functionalities.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Enhanced resistive switching and multilevel behavior in bilayered HfAlO/HfAlO{sub x} structures for non-volatile memory applications

In this work, hafnium aluminum oxide (HfAlO) thin films were deposited by ion beam sputtering deposition technique on Si substrate. The presence of oxygen vacancies in the HfAlO{sub x} layer deposited in oxygen deficient environment is evidenced from the photoluminescence spectra. Furthermore, HfAlO(oxygen rich)/HfAlO{sub x}(oxygen poor) bilayer structures exhibit multilevel resistive switching (RS), and the switching ratio becomes more prominent with increasing the HfAlO layer thickness. The bilayer structure with HfAlO/HfAlO{sub x} thickness of 30/40 nm displays the enhanced multilevel resistive switching characteristics, where the high resistance state/intermediate resistance state (IRS) and IRS/low resistance state resistance ratios are ≈10{sup 2} and ≈5 × 10{sup 5}, respectively. The switching mechanisms in the bilayer structures were investigated by the temperature dependence of the three resistance states. This study revealed that the multilevel RS is attributed to the coupling of ionic conduction and the metallic conduction, being the first associated to the formation and rupture of conductive filaments related to oxygen vacancies and the second with the formation of a metallic filament. Moreover, the bilayer structures exhibit good endurance and stability in time.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Confinement and diffusion modulate bistability and stochastic switching in a reaction network with positive feedback

Positive feedback is a common feature in signal transduction networks and can lead to phenomena such as bistability and signal propagation by domain growth. Physical features of the cellular environment, such as spatial confinement and the mobility of proteins, play important but inadequately understood roles in shaping the behavior of signaling networks. Here, we use stochastic, spatially resolved kinetic Monte Carlo simulations to explore a positive feedback network as a function of system size, system shape, and mobility of molecules. We show that these physical properties can markedly alter characteristics of bistability and stochastic switching when compared with well-mixed simulations. Notably, systems of equal volume but different shapes can exhibit qualitatively different behaviors under otherwise identical conditions. We show that stochastic switching to a state maintained by positive feedback occurs by cluster formation and growth. Additionally, the frequency at which switching occurs depends nontrivially on the diffusion coefficient, which can promote or suppress switching relative to the well-mixed limit. Taken together, the results provide a framework for understanding how confinement and protein mobility influence emergent features of the positive feedback network by modulating molecular concentrations, diffusion-influenced rate parameters, and spatiotemporal correlations between molecules.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2016

Patterns of patterns of synchronization: Noise induced attractor switching in rings of coupled nonlinear oscillators

Following the long-lived qualitative-dynamics tradition of explaining behavior in complex systems via the architecture of their attractors and basins, we investigate the patterns of switching between distinct trajectories in a network of synchronized oscillators. Our system, consisting of nonlinear amplitude-phase oscillators arranged in a ring topology with reactive nearest-neighbor coupling, is simple and connects directly to experimental realizations. We seek to understand how the multiple stable synchronized states connect to each other in state space by applying Gaussian white noise to each of the oscillators' phases. To do this, we first analytically identify a set of locally stable limit cycles at any given coupling strength. For each of these attracting states, we analyze the effect of weak noise via the covariance matrix of deviations around those attractors. We then explore the noise-induced attractor switching behavior via numerical investigations. For a ring of three oscillators, we find that an attractor-switching event is always accompanied by the crossing of two adjacent oscillators' phases. For larger numbers of oscillators, we find that the distribution of times required to stochastically leave a given state falls off exponentially, and we build an attractor switching network out of the destination states as a coarse-grained description of the high-dimensional attractor-basin architecture.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2017

Single shot ultrafast all optical magnetization switching of ferromagnetic Co/Pt multilayers

A single femto-second optical pulse can fully reverse the magnetization of a film within picoseconds. Such fast operation hugely increases the range of application of magnetic devices. However, so far, this type of ultrafast switching has been restricted to ferri-magnetic GdFeCo films. In contrast, all optical switching of ferro-magnetic films require multiple pulses, thereby being slower and less energy efficient. In this study, we demonstrate magnetization switching induced by a single laser pulse in various ferromagnetic Co/Pt multilayers grown on GdFeCo, by exploiting the exchange coupling between the two magnetic films. Table-top depth-sensitive time-resolved magneto-optical experiments show that the Co/Pt magnetization switches within 7 ps. Lastly, this coupling approach will allow ultrafast control of a variety of magnetic films, which is critical for applications.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Enhancing the x-ray output of a single-wire explosion with a gas-puff based plasma opening switch

Here, we present experiments performed on the 1 MA COBRA generator using a low density, annular, gas-puff z-pinch implosion as an opening switch to rapidly transfer a current pulse into a single metal wire on axis. This gas-puff on axial wire configuration was studied for its promise as an opening switch and as a means of enhancing the x-ray output of the wire. We demonstrate that current can be switched from the gas-puff plasma into the wire, and that the timing of the switch can be controlled by the gas-puff plenum backing pressure. X-ray detector measurements indicate that for low plenum pressure Kr or Xe shots with a copper wire, this configuration can offer a significant enhancement in the peak intensity and temporal distribution of radiation in the 1–10 keV range.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2019

Nonvolatile voltage controlled molecular spin state switching

Voltage-controlled room temperature isothermal reversible spin crossover switching of [Fe{H 2 B(pz) 2 } 2 (bipy)] thin films is demonstrated. This isothermal switching is evident in thin film bilayer structures where the molecular spin crossover film is adjacent to a molecular ferroelectric. The adjacent molecular ferroelectric, either polyvinylidene fluoride hexafluoropropylene or croconic acid (C 5 H 2 O 5 ), appears to lock the spin crossover [Fe{H 2 B(pz) 2 } 2 (bipy)] molecular complex largely in the low or high spin state depending on the direction of ferroelectric polarization. In both a planar two terminal diode structure and a transistor structure, the voltage controlled isothermal reversible spin crossover switching of [Fe{H 2 B(pz) 2 } 2 (bipy)] is accompanied by a resistance change and is seen to be nonvolatile, i.e., retained in the absence of an applied electric field. Here, the result appears general, as the voltage controlled nonvolatile switching can be made to work with two different molecular ferroelectrics: croconic acid and polyvinylidene fluoride hexafluoropropylene.

74 ATOMIC AND MOLECULAR PHYSICS↗
DOE OSTI2022

Distributed deep learning training using silicon photonic switched architectures

The scaling trends of deep learning models and distributed training workloads are challenging network capacities in today’s datacenters and high-performance computing (HPC) systems. We propose a system architecture that leverages silicon photonic (SiP) switch-enabled server regrouping using bandwidth steering to tackle the challenges and accelerate distributed deep learning training. In addition, our proposed system architecture utilizes a highly integrated operating system-based SiP switch control scheme to reduce implementation complexity. To demonstrate the feasibility of our proposal, we built an experimental testbed with a SiP switch-enabled reconfigurable fat tree topology and evaluated the network performance of distributed ring all-reduce and parameter server workloads. The experimental results show up to 3.6× improvements over the static non-reconfigurable fat tree. Our large-scale simulation results show that server regrouping can deliver up to 2.3× flow throughput improvement for a 2× tapered fat tree and a further 11% improvement when higher-layer bandwidth steering is employed. The collective results show the potential of integrating SiP switches into datacenters and HPC systems to accelerate distributed deep learning training.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2022

Resistive switching properties of monolayer h-BN atomristors with different electrodes

Resistive switching properties based on molecular beam epitaxy-grown monolayer hexagonal boron nitride (h-BN) atomristors are studied by using metal insulator metal configurations with different electrode materials. Au/monolayer h-BN/Ni devices demonstrate a forming-free bipolar resistive switching (BRS) behavior, a good endurance with up to 97 cycles at a high compliance current of 100 mA, an average on/off ratio of 10 3 , and a low set/reset voltage variability. Metal/monolayer h-BN/graphite/Co devices exhibit self-compliant current BRS characteristics. Both metal/h-BN/Ni and metal/h-BN/graphite/Co devices show the coexistence of BRS, unipolar resistive switching (URS), and nonvolatile threshold switching (TH) modes. The formation of conductive filaments is attributed to the diffusion and trapping of metal ions on the defect sites driven by the electric field, while the rupture is driven by the electric field in BRS and by Joule heating in URS and TH modes.

74 ATOMIC AND MOLECULAR PHYSICS↗
DOE OSTI2025

Resistive Switching in SrFeO2.5/Nb:SrTiO3 Heterostructures with Growth-Controlled Film Orientation

Resistive switching, a behavior found in many oxide materials, has the potential to enable emerging computer hardware technologies and architectures. We present resistive switching devices fabricated from epitaxial brownmillerite SrFeO2.5 films with two distinct film orientations, wherein facile oxygen ion diffusion planes are aligned parallel (in-plane) and perpendicular (out-of-plane) with the electrodes. SrFeO2.5 films were grown on (001) oriented Nb:SrTiO3 to enable high-quality interfaces and future integration with Si CMOS technologies. Post-growth vacuum annealing and growth pressure were used to control film orientations, as confirmed by transmission electron microscopy and x-ray diffraction measurements. Films grown with diffusion planes oriented in-plane had oxygen-rich, perovskite-like nanodomains spread throughout the film, and fabricated devices exhibited worse switching consistency and more stochasticity. In contrast, films grown with diffusion planes oriented out-of-plane had a more uniform oxygen-rich perovskite interfacial layer above the bottom electrode, and devices built from this film orientation showed significant statistical improvements in switching voltages and cycling consistency.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2020

An attempt to simulate laser-induced all-optical spin switching in a crystalline ferrimagnet

Interest in all-optical spin switching (AOS) is growing rapidly. The recent discovery of AOS in Mn 2 RuGa provides a much needed clean case of crystalline ferrimagnets for theoretical simulations. Here, we attempt to simulate it using the state-of-the-art first-principles method combined with the Heisenberg exchange model. We first compute the spin moments at two inequivalent manganese sites and then feed them into our model Hamiltonian. We employ an ultrafast laser pulse to switch the spins. We find that there is a similar optimal laser field amplitude to switch spins. However, we find that the exchange interaction has a significant effect on the system switchability. Weakening the exchange interaction could make the system unswitchable. This provides a crucial insight into the switching mechanism in ferrimagnets.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Reversible plasmonic switching in a graphene nanoresonator loaded with a core – shell quantum dot

A model of an all-plasmonic switch based on a graphene waveguide integrated with a stub nanoresonator loaded with a quantum dot is considered. Using the full-wave numerical simulation, it is shown that successive on/off switching of the control surface plasmon – polariton wave at the input of the waveguide leads to a change in the phase of the signal plasmon – polariton wave in the nanoresonator by π. This causes reversible switching of the device operation regime – from almost complete blocking to stable transmission of the signal plasmon – polariton wave through the waveguide. The effect is implemented at rates of ∼0.5 THz for infrared electromagnetic waves localised in a device with a switching region of 40 × 20 nm. (paper)

36 MATERIALS SCIENCE↗
DOE OSTI2023

Controlling the charge of dust particles in a plasma afterglow by timed switching of an electrode voltage

Abstract A method is demonstrated for controlling the charge of a dust particle in a plasma afterglow, allowing a wider range of outcomes than an earlier method. As in the earlier method, the dust particles are located near an electrode that has a DC voltage during the afterglow. Here, that DC voltage is switched to a positive value at a specified delay time, instead of maintaining a constant negative voltage as in the earlier method. Adjusting the timing of this switching allows one to control the residual charge gradually over a wide range that includes both negative and positive values of charge. For comparison, only positive residual charges were attained in the earlier method. We were able to adjust the residual charge from about −2000 e to +10 000 e , for our experimental parameters (8.35 µ m particles, 8 mTorr argon pressure, and a DC voltage that was switched from −150 V to +125 V within the first two milliseconds of the afterglow). The plasma conditions near the dust particles changed from ion-rich to electron-rich, when the electrode was switched from cathodic to anodic. Making this change at a specified time, as the electrons and ions decay in the afterglow, provides this control capability. These results also give insight into the time development of a dust particle’s charge in the afterglow, on a sub-millisecond time scale.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2019

All-optical spin switching under different spin configurations

All-optical spin switching represents a new frontier in femtomagnetism. However, its underlying principles are quite different from traditional thermal activated spin switching. In this work, we employ a atomic spin model and present a systematic investigation from a single spin to a large system of over a million spins. We find that for a single spin in absence of external laser excitation, the conservation of total angular momentum requires that the spin change exactly matches the orbital momentum change, but a laser pulse significantly alters this relation, where the spin change does not necessarily follow the orbital change. This is reflected in the strong dependence of switching on laser polarization. To have an efficient spin switching, the electron initial momentum direction must closely follow the spin’s orientation, so the orbital angular momentum is transverse to the spin and consequently the spin-orbit torque lies in the same direction as the spin. These findings are manifested in a much larger system. We find that the spin response depends on underlying spin structures. Linearly polarized laser pulses creates a dip in a uniform inplane magnetized thin film, but has little effects on Neel and Bloch walls. Both right- and left- circularly polarized light (σ+ and σ-) have stronger but different effects in both uniform spin domains and Neel walls. While σ+ light creates a basin of spins pointing down, σ- light creates a mound of spins pointing up. At the vicinity of the structure spins are reversed, similar to the experimental observation. σ+ light has a dramatic effect, disrupting spins in Bloch walls. By contrast, σ+ light has a small effect on Bloch walls because of its helicity. These findings are expected to have important implications in the future.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2025

Nanoscale Quantum Imaging of Field-Free Deterministic Switching of a Chiral Antiferromagnet

Recently, unconventional spin-orbit torques (SOTs) with tunable spin generation have opened new pathways for designing novel magnetization control for cutting-edge spintronics innovations. A leading research thrust is to develop field-free deterministic magnetization switching for implementing scalable and energy favorable magnetic recording and storage, which have been demonstrated in conventional ferromagnetic and antiferromagnetic material systems. Here, in this work, we extend this advanced magnetization control strategy to chiral antiferromagnet Mn 3 ⁢Sn using spin currents with out-of-plane canted polarization generated from low-symmetry van der Waals (vdW) material WTe 2 . Numerical calculations suggest that dampinglike SOT of spins injected perpendicular to the kagome plane of Mn 3⁢ Sn serves as a driving force to rotate the chiral magnetic order, while the fieldlike SOT of spin currents with polarization parallel to the kagome plane provides the bipolar deterministicity to the magnetic switching in the absence of an external magnetic field. We further introduce scanning quantum microscopy to visualize nanoscale evolutions of Mn 3 ⁢Sn magnetic domains during the field-free switching process, corroborating the exceptionally large magnetic switching ratio up to 90%. Our results highlight the opportunities provided by hybrid SOT material platforms consisting of noncollinear antiferromagnets and low-symmetry vdW spin source materials for developing next-generation spintronic logic devices.

2-dimesional systems↗
DOE OSTI2020

Quantum Versus Classical Switching Dynamics of Driven Dissipative Kerr Resonators

Here, we report a first-principles study of the driven dissipative dynamics for Kerr oscillators in the mesoscopic regime. This regime is characterized by large Kerr nonlinearity, realized here using the nonlinear kinetic inductance of a large array of Josephson junctions. The experimentally measured nonlinear resonance lineshapes of the junction array modes show significant deviations from steady-state numerical predictions, and necessitate time-dependent numerical simulations indicative of strong measurement-induced dephasing in the system arising from the large cross-Kerr effect between array modes. Analytical and numerical calculations of switching rate corroborate this by showing the emergence of a slow time scale, which is much longer than the linear decay rate and is set by fluctuation-induced switching times in the bistable regime. Furthermore, our analysis shows that the usual quantum-activated escape treatment is inadequate for prediction of the switching rates at large frequency shifts caused by strong nonlinearities, necessitating a quantum treatment that utilizes the full system Liouvillian. Based on our analysis, we identify a universal crossover parameter that delineates the regimes of validity of semiclassical and quantum descriptions, respectively. Our work shows how dynamical switching effects in strongly nonlinear systems provide a platform to study quantum-to-classical transitions.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗