Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “Resistivity”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 487 records · Page 27
All sourcesNASA NTRSDOE OSTI
DOE OSTI2012

Heavy metals in liquid pig manure in light of bacterial antimicrobial resistance

Heavy metals are regularly found in liquid pig manure, and might interact with bacterial antimicrobial resistance. Concentrations of heavy metals were determined by atomic spectroscopic methods in 305 pig manure samples and were connected to the phenotypic resistance of Escherichia coli (n=613) against 29 antimicrobial drugs. Concentrations of heavy metals (/kg dry matter) were 0.08-5.30 mg cadmium, 1.1-32.0 mg chrome, 22.4-3387.6 mg copper, <2.0-26.7 mg lead, <0.01-0.11 mg mercury, 3.1-97.3 mg nickel and 93.0-8239.0 mg zinc. Associated with the detection of copper and zinc, resistance rates against {beta}-lactams were significantly elevated. By contrast, the presence of mercury was significantly associated with low antimicrobial resistance rates of Escherichia coli against {beta}-lactams, aminoglycosides and other antibiotics. Effects of subinhibitory concentrations of mercury on bacterial resistance against penicillins, cephalosporins, aminoglycosides and doxycycline were also demonstrated in a laboratory trial. Antimicrobial resistance in the porcine microflora might be increased by copper and zinc. By contrast, the occurrence of mercury in the environment might, due to co-toxicity, act counter-selective against antimicrobial resistant strains.

60 APPLIED LIFE SCIENCES↗
DOE OSTI2018

On the importance of the heat and mass transfer resistances in internally-cooled liquid desiccant dehumidifiers and regenerators

Liquid desiccant heat and mass exchangers are a promising technology for efficient humidity control in buildings. Many researchers have investigated these exchangers, often using numerical models to predict their performance. However, there is a lack of information in the literature on the magnitude of the heat and mass transfer resistances, both for the dehumidifier (which absorbs moisture from the air) and the regenerator (which heats the liquid desiccant to re-concentrate it). This article focuses on internally-cooled, 3-fluid exchangers in a parallel plate geometry. Water heats or cools a desiccant across a plate, and the desiccant absorbs or releases water into an airstream through a membrane. A sensitivity analysis was used to estimate the importance of each of the heat and mass transfer resistances (air, membrane, desiccant, plate, water), and how it changes with different design geometries. The results show that, for most designs, the latent and sensible heat transfer of the dehumidifier is dominated by the air mass transfer resistance and air heat transfer resistance, respectively. The air mass transfer resistance is also important for the regenerator, but much less so; the change in the desiccant equilibrium humidity ratio due to a change in either temperature or desiccant mass fraction is much higher at the regenerator's higher temperatures. This increases the importance of (1) getting heat from the water to the desiccant/membrane interface, and (2) diffusing salt ions quickly away from the desiccant/membrane interface. The membrane heat transfer and water heat transfer resistances were found to be the least important. These results can help inform decisions about what simplifying assumptions to make in numerical models, and can also help in designing these exchangers by understanding which resistances are most important.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗
DOE OSTI2016

The Involvement of Mitochondrial Membrane Potential in Cross-Resistance Between Radiation and Docetaxel

Purpose: To understand the molecular mechanisms underlying cancer cell radioresistance, clinically relevant radioresistant (CRR) cells that continue to proliferate during exposure to 2 Gy/day X-rays for more than 30 days were established. A modified high-density survival assay for anticancer drug screening revealed that CRR cells were resistant to an antimicrotubule agent, docetaxel (DTX). The involvement of reactive oxygen species (ROS) from mitochondria (mtROS) in the cross-resistance to X-rays and DTX was studied. Methods and Materials: Sensitivity to anticancer agents was determined by a modified high-density cell survival or water-soluble tetrazolium salt assay. DTX-induced mtROS generation was determined by MitoSOX red staining. JC-1 staining was used to visualize mitochondrial membrane potential. DTX-induced DNA double-strand breaks were determined by γ-H2AX staining. To obtain mitochondrial DNA-lacking (ρ{sup 0}) cells, the cells were cultured for 3 to 4 weeks in medium containing ethidium bromide. Results: Treatment with DTX increased mtROS in parental cells but not in CRR cells. DTX induced DNA double-strand breaks in parental cells. The mitochondrial membrane potential of CRR cells was lower in CRR cells than in parental cells. Depletion of mtDNA induced DTX resistance in parental cells. Treatment with dimethyl sulfoxide also induced DTX resistance in parental cells. Conclusions: The mitochondrial dysfunction observed in CRR cells contributes to X-ray and DTX cross-resistance. The activation of oxidative phosphorylation in CRR cells may represent an effective approach to overcome radioresistant cancers. In general, the overexpression of β-tubulin or multidrug efflux pumps is thought to be involved in DTX resistance. In the present study, we discovered another DTX resistant mechanism by investigating CRR cells.

62 RADIOLOGY AND NUCLEAR MEDICINE↗
DOE OSTI2018

Tripartite motif 31 promotes resistance to anoikis of hepatocarcinoma cells through regulation of p53-AMPK axis

Highlights: • TRIM31 was upregulated after anchorage deprival of HCC cells. • Overactivation of AMPK pathway was responsible for TRIM31-mediated resistance to anoikis of HCC cells. • TRIM31 directly targeted p53 for K-48 linked ubiquitous degradation. • TRIM31-p53-AMPK axis played a pivotal role in anoikis-resistance of metastatic liver cancer. Anoikis-resistance is an essential feature of cancer cells to obtain successful metastasis, whereas the molecular mechanism involved in this process of hepatocellular carcinoma (HCC) cells is not fully understood. Here we demonstrated that tripartite motif-containing (TRIM) 31, a new member of the TRIM family, was significantly upregulated in the anchorage-deprived HCC cells compared with their attached counterpart. When we blocked TRIM31 expression by its specific interference RNAs, the anoikis-resistance of HCC cells was significantly reversed. We further verified that overactivation of AMPK pathway was responsible for TRIM31-mediated resistance to anoikis of HCC cells; and TRIM31 could directly target p53, the upstream suppressor of AMPK pathway, and mediate K48-linked ubiquitous degradation of p53 in a RING-domain-dependent way. Therefore we demonstrated that TRIM31 promoted anoikis-resistance by targeting p53 for degradation and subsequently overactivating AMPK pathway. Thus our study defined for the first time the role of TRIM31 in the anoikis-resistant process of HCC cells and it may pave a new avenue for manipulation of metastatic cancer by targeting TRIM31.

60 APPLIED LIFE SCIENCES↗
DOE OSTI2015

Crystal Structure of the Zorbamycin-Binding Protein ZbmA, the Primary Self-Resistance Element in Streptomyces flavoviridis ATCC21892

The bleomycins (BLMs), tallysomycins (TLMs), phleomycin, and zorbamycin (ZBM) are members of the BLM family of glycopeptide-derived antitumor antibiotics. The BLM-producing Streptomyces verticillus ATCC15003 and the TLM-producing Streptoalloteichus hindustanus E465-94 ATCC31158 both possess at least two self-resistance elements, an N-acetyltransferase and a binding protein. The N-acetyltransferase provides resistance by disrupting the metal-binding domain of the antibiotic that is required for activity, while the binding protein confers resistance by sequestering the metal-bound antibiotic and preventing drug activation via molecular oxygen. We recently established that the ZBM producer, Streptomyces flavoviridis ATCC21892, lacks the N-acetyltransferase resistance gene and that the ZBM-binding protein, ZbmA, is sufficient to confer resistance in the producing strain. To investigate the resistance mechanism attributed to ZbmA, we determined the crystal structures of apo and Cu(II)-ZBM-bound ZbmA at high resolutions of 1.90 and 1.65 angstrom, respectively. A comparison and contrast with other structurally characterized members of the BLM-binding protein family revealed key differences in the protein ligand binding environment that fine-tunes the ability of ZbmA to sequester metal-bound ZBM and supports drug sequestration as the primary resistance mechanism in the producing organisms of the BLM family of antitumor antibiotics.

59 BASIC BIOLOGICAL SCIENCES↗
DOE OSTI2015

Characterization of Resistances of a Capacitive Deionization System

Capacitive deionization (CDI) is a promising desalination technology, which operates at low pressure, low temperature, requires little infrastructure, and has the potential to consume less energy for brackish water desalination. However, CDI devices consume significantly more energy than the theoretical thermodynamic minimum, and this is at least partly due to resistive power dissipation. We here report our efforts to characterize electric resistances in a CDI system, with a focus on the resistance associated with the contact between current collectors and porous electrodes. We present an equivalent circuit model to describe resistive components in a CDI cell. We propose measurable figures of merit to characterize cell resistance. We also show that contact pressure between porous electrodes and current collectors can significantly reduce contact resistance. As a result, we propose and test an alternative electrical contact configuration which uses a pore-filling conductive adhesive (silver epoxy) and achieves significant reductions in contact resistance.

36 MATERIALS SCIENCE↗
DOE OSTI2023

An optogenetic toolkit for light-inducible antibiotic resistance

Abstract Antibiotics are a key control mechanism for synthetic biology and microbiology. Resistance genes are used to select desired cells and regulate bacterial populations, however their use to-date has been largely static. Precise spatiotemporal control of antibiotic resistance could enable a wide variety of applications that require dynamic control of susceptibility and survival. Here, we use light-inducible Cre recombinase to activate expression of drug resistance genes in Escherichia coli . We demonstrate light-activated resistance to four antibiotics: carbenicillin, kanamycin, chloramphenicol, and tetracycline. Cells exposed to blue light survive in the presence of lethal antibiotic concentrations, while those kept in the dark do not. To optimize resistance induction, we vary promoter, ribosome binding site, and enzyme variant strength using chromosome and plasmid-based constructs. We then link inducible resistance to expression of a heterologous fatty acid enzyme to increase production of octanoic acid. These optogenetic resistance tools pave the way for spatiotemporal control of cell survival.

59 BASIC BIOLOGICAL SCIENCES↗
DOE OSTI2016

The effect of a Ta oxygen scavenger layer on HfO 2 -based resistive switching behavior: Thermodynamic stability, electronic structure, and low-bias transport

Reversible resistive switching between high-resistance and low-resistance states in metal-oxide-metal heterostructures makes them very interesting for applications in random access memories. While recent experimental work has shown that inserting a metallic "oxygen scavenger layer'' between the positive electrode and oxide improves device performance, the fundamental understanding of how the scavenger layer modifies the heterostructure properties is lacking. We use density functional theory to calculate thermodynamic properties and conductance of TiN/HfO 2 /TiN heterostructures with and without a Ta scavenger layer. First, we show that Ta insertion lowers the formation energy of low-resistance states. Second, while the Ta scavenger layer reduces the Schottky barrier height in the high-resistance state by modifying the interface charge at the oxide-electrode interface, the heterostructure maintains a high resistance ratio between high-and low-resistance states. Lastly, we show that the low-bias conductance of device on-states becomes much less sensitive to the spatial distribution of oxygen removed from the HfO 2 in the presence of the Ta layer. By providing a fundamental understanding of the observed improvements with scavenger layers, we open a path to engineer interfaces with oxygen scavenger layers to control and enhance device performance. In turn, this may enable the realization of a non-volatile low-power memory technology with concomitant reduction in energy consumption by consumer electronics and offering significant benefits to society.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2020

Understanding resistances in capacitive deionization devices

The desalination characteristics of capacitive deionization (CDI) are significantly impacted by the cell resistance. Here we apply electrochemical impedance spectroscopy (EIS) to analyze the resistive properties of a CDI device, which include EIS measurements on a complete assembled cell (in two wire mode) and EIS measurements with additional contacts to decouple electrode/electrolyte and contact impedances (four wire mode). These measurements shed light on the interface between current collector and electrode as well as the internal capacitive and resistive elements of the cell. With two-wire and four-wire EIS measurements, we find that the often observed high-frequency arc(s) in the impedance spectra can be due to contact effects and/or an internal ionic-transfer resistance that is locally in parallel with macropore wall capacitance. In some cases, the two associated arcs in the Nyquist plot are overlapping and present simultaneously, making their identification in the EIS spectra difficult unless both two-wire and four-wire measurements are made. Despite causing a large high-frequency arc in the Nyquist plot, we find that the apparent internal ionic-transfer resistance is negligible compared to the resistances of the electrode, separator, and external electronic components. Here, an investigation of the contact impedance between the electrode and current collector reveals a parallel RC arc that can grow over time if an improper material is used (e.g., titanium). In our system, the electrode ionic resistance dominates the total Ohmic power dissipation, which has implications for scale-up of CDI systems and future improvements of cell design.

36 MATERIALS SCIENCE↗
DOE OSTI2010

Adsorption-driven tuning of the electrical resistance of nanoporous gold

The electrical resistance of nanoporous gold prepared by dealloying is tuned by charging the surfaces of the porous structure in an electrolyte. Reversible variations in the resistance up to approximately 4% and 43% occur due to charging in the regimes of double layer charging and specific adsorption, respectively. Charging-induced variations in the electron density or of the volume cannot account for the resistance variation, indicating that this variation is primarily caused by charge-induced modifications of the charge carrier scattering at the solid-electrolyte interface. The relative resistance variation in nanoporous Au with surface charging is found to be much higher than reported for porous nanocrystalline Pt. This is due to the lesser resistance contribution from internal grain boundaries. The resistance variation in nanoporous Au is also higher than that found in thin films owing to the stronger surface scattering in the ligament structure compared to plan surfaces. We argue that the strong resistance variation in up to 43% in the regime of specific adsorption is due to the reversible formation of a chemisorbed surface layer acting as scattering centers for the charge carriers.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2011

A Novel Method of Modeling the Deformation Resistance for Clad Sheet

Because of the excellent thermal conductivity, the clad sheet (3003/4004/3003) of aluminum alloy is extensively used in various heat exchangers, such as radiator, motorcar air conditioning, evaporator, and so on. The deformation resistance model plays an important role in designing the process parameters of hot continuous rolling. However, the complex behaviors of the plastic deformation of the clad sheet make the modeling very difficult. In this work, a novel method for modeling the deformation resistance of clad sheet was proposed by combining the finite element analysis with experiments. The deformation resistance model of aluminum 3003 and 4004 was proposed through hot compression test on the Gleeble-1500 thermo-simulation machine. And the deformation resistance model of clad sheet was proposed through finite element analysis using DEFORM-2D software. The relationship between cladding ratio and the deformation resistance was discussed in detail. The results of hot compression simulation demonstrate that the cladding ratio has great effects on the resistance of the clad sheet. Taking the cladding ratio into consideration, the mathematical model of the deformation resistance for clad sheet has been proved to have perfect forecasting precision of different cladding ratio. Therefore, the presented model can be used to predict the rolling force of clad sheet during the hot continuous rolling process.

36 MATERIALS SCIENCE↗
DOE OSTI2013

In situ observation of nickel as an oxidizable electrode material for the solid-electrolyte-based resistive random access memory

In this letter, we dynamically investigate the resistive switching characteristics and physical mechanism of the Ni/ZrO{sub 2}/Pt device. The device shows stable bipolar resistive switching behaviors after forming process, which is similar to the Ag/ZrO{sub 2}/Pt and Cu/ZrO{sub 2}/Pt devices. Using in situ transmission electron microscopy, we observe in real time that several conductive filaments are formed across the ZrO{sub 2} layer between Ni and Pt electrodes after forming. Energy-dispersive X-ray spectroscopy results confirm that Ni is the main composition of the conductive filaments. The ON-state resistance increases with increasing temperature, exhibiting the feature of metallic conduction. In addition, the calculated resistance temperature coefficient is equal to that of the 10-30 nm diameter Ni nanowire, further indicating that the nanoscale Ni conductive bridge is the physical origin of the observed conductive filaments. The resistive switching characteristics and the conductive filament's component of Ni/ZrO{sub 2}/Pt device are consistent with the characteristics of the typical solid-electrolyte-based resistive random access memory. Therefore, aside from Cu and Ag, Ni can also be used as an oxidizable electrode material for resistive random access memory applications.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2013

Quantum resistance standard accuracy close to the zero-dissipation state

We report on a comparison of four GaAs/AlGaAs-based quantum resistance standards using an original technique adapted from the well-known Wheatstone bridge. This work shows that the quantized Hall resistance at Landau level filling factor ν=2 can be reproducible with a relative uncertainty of 32×10{sup −12} in the dissipationless limit of the quantum Hall effect regime. In the presence of a very small dissipation characterized by a mean macroscopic longitudinal resistivity R{sub xx}(B) of a few μΩ, the discrepancy ΔR{sub H}(B) between quantum Hall resistors measured on the Hall plateau at magnetic induction B turns out to follow the so-called resistivity rule R{sub xx}(B)=αB×d(ΔR{sub H}(B))/dB. While the dissipation increases with the measurement current value, the coefficient α stays constant in the range investigated (40−120 μA). This result enlightens the impact of the dissipation emergence in the two-dimensional electron gas on the Hall resistance quantization, which is of major interest for the resistance metrology. The quantum Hall effect is used to realize a universal resistance standard only linked to the electron charge e and the Planck constant h and it is known to play a central role in the upcoming revised Système International of units. There are therefore fundamental and practical benefits in testing the reproducibility property of the quantum Hall effect with better and better accuracy.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Uniform bipolar resistive switching properties with self-compliance effect of Pt/TiO{sub 2}/p-Si devices

We report uniform bipolar resistive switching characteristic with self-compliance effect of Pt/TiO{sub 2}/p-Si devices in which TiO{sub 2} thin films were prepared directly on p-Si substrates by chemical solution deposition method. The resistive switching parameters of the Pt/TiO{sub 2}/p-Si cell obtained, such as distribution of threshold voltages, retention time, as well as resistance variation of high resistance state (HRS) and low resistance state (LRS), were investigated, and the conduction mechanisms of HRS and LRS were analyzed. The conductive mechanism at LRS and low voltage region of HRS was dominated by Ohmic law. At the high voltage region of HRS, the conductive mechanism followed the space charge limited current theory. The resistive switching phenomenon can be explained by electron trapping and de-trapping process, in which the defects (most probably oxygen vacancies) act as electron traps. Our study suggests that using p-type silicon as bottom electrode can provide a simple method for fabricating a resistive random access memory with self-compliance function. In addition, the Pt/TiO{sub 2}/p-Si configuration is compatible with complementary metal oxide semiconductor process.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Separation of interlayer resistance in multilayer MoS{sub 2} field-effect transistors

We extracted the interlayer resistance between two layers in multilayer molybdenum disulfide (MoS{sub 2}) field-effect transistors by confirming that contact resistances (R{sub contact}) measured using the four-probe measurements were similar, within ∼30%, to source/drain series resistances (R{sub sd}) measured using the two-probe measurements. R{sub contact} values obtained from gated four-probe measurements exhibited gate voltage dependency. In the two-probe measurements, the Y-function method was applied to obtain the R{sub sd} values. By comparing those two R{sub contact} (∼9.5 kΩ) and R{sub sd} (∼12.3 kΩ) values in strong accumulation regime, we found the rationality that those two values had nearly the same properties, i.e., the Schottky barrier resistances and interlayer resistances. The R{sub sd} values of devices with two-probe source/drain electrodes exhibited thickness dependency due to interlayer resistance changes. The interlayer resistance between two layers was also obtained as ∼2.0 Ω mm.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Enhanced resistive switching and multilevel behavior in bilayered HfAlO/HfAlO{sub x} structures for non-volatile memory applications

In this work, hafnium aluminum oxide (HfAlO) thin films were deposited by ion beam sputtering deposition technique on Si substrate. The presence of oxygen vacancies in the HfAlO{sub x} layer deposited in oxygen deficient environment is evidenced from the photoluminescence spectra. Furthermore, HfAlO(oxygen rich)/HfAlO{sub x}(oxygen poor) bilayer structures exhibit multilevel resistive switching (RS), and the switching ratio becomes more prominent with increasing the HfAlO layer thickness. The bilayer structure with HfAlO/HfAlO{sub x} thickness of 30/40 nm displays the enhanced multilevel resistive switching characteristics, where the high resistance state/intermediate resistance state (IRS) and IRS/low resistance state resistance ratios are ≈10{sup 2} and ≈5 × 10{sup 5}, respectively. The switching mechanisms in the bilayer structures were investigated by the temperature dependence of the three resistance states. This study revealed that the multilevel RS is attributed to the coupling of ionic conduction and the metallic conduction, being the first associated to the formation and rupture of conductive filaments related to oxygen vacancies and the second with the formation of a metallic filament. Moreover, the bilayer structures exhibit good endurance and stability in time.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Study of self-compliance behaviors and internal filament characteristics in intrinsic SiO{sub x}-based resistive switching memory

Self-compliance characteristics and reliability optimization are investigated in intrinsic unipolar silicon oxide (SiO{sub x})-based resistive switching (RS) memory using TiW/SiO{sub x}/TiW device structures. The program window (difference between SET voltage and RESET voltage) is dependent on external series resistance, demonstrating that the SET process is due to a voltage-triggered mechanism. The program window has been optimized for program/erase disturbance immunity and reliability for circuit-level applications. The SET and RESET transitions have also been characterized using a dynamic conductivity method, which distinguishes the self-compliance behavior due to an internal series resistance effect (filament) in SiO{sub x}-based RS memory. By using a conceptual “filament/resistive gap (GAP)” model of the conductive filament and a proton exchange model with appropriate assumptions, the internal filament resistance and GAP resistance can be estimated for high- and low-resistance states (HRS and LRS), and are found to be independent of external series resistance. Our experimental results not only provide insights into potential reliability issues but also help to clarify the switching mechanisms and device operating characteristics of SiO{sub x}-based RS memory.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Reducing of internal resistance lithium ion battery using glucose addition

There are two indicators of battery performance, i.e : capacity and the internal resistance of battery. In this research, the affect of glucose addition to decrease the internal resistance of lithium battery was investigated. The ratio of glucose addition were varied at weight ratio 1%, 3%, and 5% and one mixtures without glucose addition. Lithium ferri phosphate (LiFePO{sub 4}), polyvinylidene fluoride (PVDF), acetylene black (AB) and glucose were materials that used in this study. Both of mixtures were mixed in the vacuum mixer until became homogeneous. The slurry was coated on an aluminium foil sheet and the coated thickness was 200 µm. The performance of battery lithium was examined by Eight Channel Battery Analyzer and the Internal resistance was examined by Internal Resistance of Battery Meter. The result from all analyzer were showed that the internal resistance reduced as well as the battery capacity. The best internal resistance value is owned by mixtures with 3wt% ratio glucose addition. It has an internal resistance value about 64 miliohm.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗