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At least 487 records · Page 27
All sourcesNASA NTRSDOE OSTI
NASA NTRS1987

Monolithic Isolated Single-Mode Ring Laser

MISER uses four-sided ring to lase nonreciprocally. Laser concept provides very-compact, efficient, and stable source of coherent radiation. Lasers of single, very-stable frequency desirable for number of purposes. Frequency stability makes possible coherent detection of laser radiation with low-bandwidth detector, useful for communications. Allows very-high-resolution spectroscopy. Any application where desired to use laser in way microwaves used traditionally enhanced if frequency very stable.

Kane, T. J.↗
NASA NTRS1987

Progress Toward Monolithic Peritectic Solidification

Reducing convection during plane-front, two-phase peritectic solidification reduces banding. Experiments show reducing radial thermal gradients and flattening solidification interface reduces compositional banding associated with plane-front, two-phase peritectic solidification. Possibility of coupled two-phase peritectic composite solidification still exists. Previously thought banding was inevitable.

Larson, David J., Jr.↗
NASA NTRS1987

APS-Workshop on Characterization of MMIC (Monolithic Microwave Integrated Circuit) Devices for Array Antenna

The IEEE AP-S ADCOM is attempting to expand its educational, tutorial and information exchange activities as a further benefit to all members. To this end, ADCOM will be forming specialized workshops on topics of interest to its members. The first such workshop on Characterization and Packaging of MMIC Devices for Array Antennas was conceived. The workshop took place on June 13, 1986 as part of the 1986 International Symposium sponsored by IEEE AP-S and URSI in Philadelphia, PA, June 9-13, 1986. The workshop was formed to foster the interchange of ideas among MMIC device users and to provide a forum to collect and focus information among engineers experienced and interested in the topic. After brief presentations by the panelists and comments from attendees on several subtopics, the group was divided into working committees. Each committee evaluated and made recommendations on one of the subtopics.

Smetana, Jerry↗
NASA NTRS1989

Monolithic Microwave Switching Matrix

Gallium arsenide integrated-circuit chip switches any of three microwave input signals to any of three output ports. Measuring 4.9 mm on side, chip contains nine field-effect transistor (FET) crosspoint switches. Housed in custom-designed package with standard connectors for easy integration into system. FET's on chip operated as passive switches and consume no static power and insignificant amounts of switching power. Chip module cascades with similar modules into large arrays handling as many as 100 inputs and 100 outputs. Applications include switching and routing vast amounts of data between computers at extremely high speed. On communications satellite, chip switches microwave signals to and from Earth stations and other satellites.

Fujikawa, Gene↗
NASA NTRS1989

Universal test fixture for monolithic mm-wave integrated circuits calibrated with an augmented TRD algorithm

The design and evaluation of a novel fixturing technique for characterizing millimeter wave solid state devices is presented. The technique utilizes a cosine-tapered ridge guide fixture and a one-tier de-embedding procedure to produce accurate and repeatable device level data. Advanced features of this technique include nondestructive testing, full waveguide bandwidth operation, universality of application, and rapid, yet repeatable, chip-level characterization. In addition, only one set of calibration standards is required regardless of the device geometry.

Romanofsky, Robert R.↗
NASA NTRS1988

Monolithic GaAs digitizer for space-based laser pulse spreading effect

A 6-bit 1-GHz digitizer was designed to analyze the 1-ns pulse spreading effects in a space based altimeter. The digitizer consisted of four 4-bit flash A/D converters and a 6-bit encoder. Also, the converter utilized four 4-bit converters and a 4-to-6 bit encoder to achieve 6 bit resolution at the 1 GHz sample rate. The design was unique because it utilized only the inverters and NOR gates for the converters and encoder, hence it could be fabricated using the existing state-of-the-art GaAs processing techniques. This GHz digitizer has many commercial applications. It could be applicable to: (1) digital microwave transmission system for the telecommunication industries, (2) pulse monitoring in high kinetic chemical reactions, (3) transient signals in the medical field, and (4) microwave signals in astronomy.

Lao, Bennig↗
NASA NTRS1990

Monolithic Unidirectional Nonplanar Ring Laser

New design has six reflecting surfaces. Differential loss required to achieve unidirectional oscillation 100 times as great as with four reflecting surfaces. Concept provides for narrow-linewidth operation in relatively inexpensive Nd:glass. Potential applications in metrology and spectroscopy.

Nilsson, Alan C.↗
NASA NTRS1990

A computer program for the design of optimum catalytic monoliths for CO2 lasers

Pulsed CO2 lasers have many applications in aeronautics, space research, weather monitoring and other areas. Full exploitation of the potential of these lasers is hampered by the dissociation of CO2 that occurs during laser operation. The development of closed-cycle CO2 lasers requires active CO-O2 recombination (CO oxidation) catalysts and design methods for implementation of catalysts inside lasers. The performance criteria and constraints involved in the design of catalyst configurations for use in a closed-cycle laser are discussed, and several design studies performed with a computerized design program that was written are presented. Trade-offs between catalyst activity and dimensions, flow channel dimensions, pressure drop, O2 conversion and other variables are discussed.

Guinn, K.↗
NASA NTRS1989

Monolithic Arrays of Grating-Surface-Emitting Diode Lasers and Quantum Well Modulators for Optical Communications

The electro-optic switching properties of injection-coupled coherent 2-D grating-surface-emitting laser arrays with multiple gain sections and quantum well active layers are discussed and demonstrated. Within such an array of injection-coupled grating-surface-emitting lasers, a single gain section can be operated as intra-cavity saturable loss element that can modulate the output of the entire array. Experimental results demonstrate efficient sub-nanosecond switching of high power grading-surface-emitting laser arrays by using only one gain section as an intra-cavity loss modulator.

Carlson, N. W.↗
NASA NTRS1990

Highly efficient pseudomorphic InGaAs/GaAs/AlGaAs single quantum well lasers for monolithic integration

Highly efficient ridge waveguide pseudomorphic single quantum well lasers, emitting at 980 nm, have been fabricated from an In(0.2)Ga(0.8)As/GaAs/AlGaAs graded-index separate confinement heterostructure grown by molecular beam epitaxy. The laterial index guiding provided by the ridge reduces the anomalously large lateral loss of optical power found in gain-guided structures, thereby reducing the internal loss by more than 50 percent. The low threshold current (7.6 mA) and high differential quantum efficiency (79 percent) obtained under continuous operation as well as the transparency of the GaAs substrate to the emitted radiation render these lasers attractive for Ga-As-based optoelectronic integration.

Larsson, A.↗
NASA NTRS1990

Coherence properties of a doubly resonant monolithic optical parametric oscillator

A doubly resonant optical parametric oscillator (DRO) pumped with the second harmonic of a narrow-linewidth Nd:YAG laser is described. The linewidth of the DRO signal was less than 13 kHz, the DRO was shown to generate a phase-locked subharmonic of the pump at degeneracy, and the signal and the idler were shown to be mutually coherent with the pump and to be phase-anticorrelated with each other away from degeneracy. The signal-idler heterodyne linewidth was 500 Hz, and pump phase modulation was shown to transfer to the DRO phase at degeneracy.

Nabors, C. D.↗
NASA NTRS1990

Millimeter-wave monolithic diode-grid frequency multiplier

A semiconductor diode structure useful for harmonic generation of millimeter or submillimeter wave radiation from a fundamental input wave is fabricated on a GaAs substrate. A heavily doped layer of n(sup ++) GaAs is produced on the substrate and then a layer of intrinsic GaAs on said heavily doped layer on top of which a sheet of heavy doping (++) is produced. A thin layer of intrinsic GaAs grown over the sheet is capped with two metal contacts separated by a gap to produce two diodes connected back to back through the n(sup ++) layer for multiplication of frequency by an odd multiple. If only one metal contact caps the thin layer of intrinsic GaAs, the second diode contact is produced to connect to the n(sup ++) layer for multiplication of frequency by an even number. The odd or even frequency multiple is selected by a filter. A phased array of diodes in a grid will increase the power of the higher frequency generated.

Maserjian, Joseph↗
NASA NTRS1991

Analysis and characterizations of planar transmission structures and components for superconducting and monolithic integrated circuits

The analysis and modeling of superconducting planar transmission lines were performed. Theoretically, the highest possible Q values of superconducting microstrip line was calculated and, as a result, it provided the Q value that the experiment can aim for. As an effort to search for a proper superconducting transmission line structure, the superconducting microstrip line and coplanar waveguide were compared in terms of loss characteristics and their design aspects. Also, the research was expanded to a superconducting coplanar waveguide family in the microwave packaging environment. Theoretically, it was pointed out that the substrate loss is critical in the superconducting transmission line structures.

Itoh, Tatsuo↗
NASA NTRS1991

Recent advancements in monolithic AlGaAs/GaAs solar cells for space applications

High efficiency, two terminal, multijunction AlGaAs/GaAs solar cells were reproducibly made with areas of 0.5 sq cm. The multiple layers in the cells were grown by Organo Metallic Vapor Phase Epitaxy (OMVPE) on GaAs substrates in the n-p configuration. The upper AlGaAs cell has a bandgap of 1.93 eV and is connected in series to the lower GaAs cell (1.4 eV) via a metal interconnect deposited during post-growth processing. A prismatic coverglass is installed on top of the cell to reduce obscuration caused by the gridlines. The best 0.5 sq cm cell has a two terminal efficiency of 23.0 pct. at 1 sun, air mass zero (AM0) and 25 C. To date, over 300 of these cells were grown and processed for a manufacturing demonstration. Yield and efficiency data for this demonstration are presented. As a first step toward the goal of a 30 pct. efficient cell, a mechanical stack of the 0.5 sq cm cells described above, and InGaAsP (0.95 eV) solar cells was made. The best two terminal measurement to date yields an efficiency of 25.2 pct. AM0. This is the highest reported efficiency of any two terminal, 1 sun space solar cell.

Wickham, K. R.↗
NASA NTRS1992

Monolithic mm-wave phase shifter using optically activated superconducting switches

A phase shifter is disclosed having a reference path and a delay path, light sources, and superconductive switches. Each of the superconductive switches is terminated in a virtual short circuit, which may be a radial stub. Switching between the reference path and delayed path is accomplished by illuminating the superconductive switches connected to the desired path, while not illuminating the superconductive switches connected to the other path.

Romanofsky, Robert R.↗
NASA NTRS1991

Mechanical properties of monolithic and particulate composites of L12 forms of Al3Ti

Preliminary studies of simple compressive properties of particulate composites with L1(2)-modified Al3Ti's as the matrices were performed as functions of matrix composition, amount of TiB2, processing technique, temperature, and strain rate. At and below about 900 K the introduction of TiB2 particles overwhelms minor chemical effects, and extremely high-yield strengths (about 2000 MPa at the 20 vol pct TiB2 level) were obtained. As L1(2)-modified Al3Ti has about half the density of the Ni-base superalloys, such values translate to strength/density ratios approximately four times those for superalloys. This advantage is not maintained by the Al3Ti-based composites above about 1000 K, particularly under slow strain rate plastic flow conditions, and it is proposed that this behavior could be due to the dissolution of intermetallic second phases as well as grain boundary creep mechanisms.

Whittenberger, J. D.↗
NASA NTRS1992

Two-dimensional thermal modeling of power monolithic microwave integrated circuits (MMIC's)

Numerical simulations of the two-dimensional temperature distributions for a typical GaAs MMIC circuit are conducted, aiming at understanding the heat conduction process of the circuit chip and providing temperature information for device reliability analysis. The method used is to solve the two-dimensional heat conduction equation with a control-volume-based finite difference scheme. In particular, the effects of the power dissipation and the ambient temperature are examined, and the criterion for the worst operating environment is discussed in terms of the allowed highest device junction temperature.

Fan, Mark S.↗
NASA NTRS1991

Spectral performance of monolithic holmium and thulium lasers

Fabry-Perot resonators have been used to demonstrate single-mode lasing of holmium and neodymium YAG. The previous demonstration in the holmium laser required TE cooling the crystal to -15 C in order to achieve threshold. The present study extends that result, demonstrating +25 C operation in a 1-mm thick plano/plano resonator. The experimental configuration of lasing both the holmium and thulium lasers used a 500-mW diode laser which was collimated, circularized, and focused into a beam radius of 60 microns. The single-frequency lasing spectrum of the holmium laser is shown. By adjusting the mirror reflectivity, the ability to control the laser's wavelength is demonstrated. This laser operated with 11 mW of optical power, a 57-percent slope efficiency, and 120-mW threshold vs absorbed diode power laser for the 60-micron beam radius. The thulium laser operated very efficiently at room temperature, but on seven longitudinal modes. The Tm:TAG laser exhibits typical characteristics of spatial hole burning not seen in the Ho:Tm:YAG for flat/flat resonators.

Storm, Mark E.↗