Trapped-ion entangling gates with bichromatic pair of microwave fields and magnetic field gradient
A trapped-ion quantum logic gate and a method of operating the trapped-ion quantum logic gate are provided. The trapped-ion quantum logic gate includes at least one ion having two internal states and forming a qubit having a qubit transition frequency ω 0 0, a magnetic field gradient, and two microwave fields. Each of the two microwave fields has a respective frequency that is detuned from the qubit transition frequency ω 0 by frequency difference δ. The at least one ion has a Rabi frequency Ω μ due to the two microwave fields and a Rabi frequency Ω g due to the magnetic field gradient. The method includes applying the magnetic field gradient and the two microwave fields to the at least one ion such that a quantity Ω g /δ is in a range between zero and 5×10 −2 .