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At least 487 records · Page 27

Direct electron beam patterning of electro-optically active PEDOT:PSS

The optical and electronic tunability of the conductive polymer poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) has enabled emerging applications as diverse as bioelectronics, flexible electronics, and micro- and nano-photonics. High-resolution spatial patterning of PEDOT:PSS opens up opportunities for novel active devices in a range of fields. However, typical lithographic processes require tedious indirect patterning and dry etch processes, while solution-processing methods such as ink-jet printing have limited spatial resolution. Here, we report a method for direct write nano-patterning of commercially available PEDOT:PSS through electron-beam induced solubility modulation. The written structures are water stable and maintain the conductivity as well as electrochemical and optical properties of PEDOT:PSS, highlighting the broad utility of our method. We demonstrate the potential of our strategy by preparing prototypical nano-wire structures with feature sizes down to 250 nm, an order of magnitude finer than previously reported direct write methods, opening the possibility of writing chip-scale microelectronic and optical devices. We finally use the high-resolution writing capabilities to fabricate electrically-switchable optical diffraction gratings. We show active switching in this archetypal system with >95 % contrast at CMOS-compatible voltages of +2 V and -3 V, offering a route towards highly-miniaturized dynamic optoelectronic devices.

42 ENGINEERING↗

All-optical control of charge-trapping defects in rare-earth doped oxides

Abstract Charge-trapping defects in crystalline solids play important roles in applications ranging from microelectronics, optical storage, sensing and quantum technologies. On one hand, depleting trapped charges in the host matrix reduces charge noise and enhances coherence of solid-state quantum emitters. On the other hand, stable charge traps can enable high-density optical storage systems. Here we report all-optical control of charge-trapping defects via optical charge trapping (OCT) spectroscopy of a rare-earth ion doped oxide (Y 2 O 3 ). Charge trapping is realized by low intensity optical excitation in the 200–375 nm range. Charge detrapping or depletion is carried out by optically stimulated luminescence (OSL) under 532 nm stimulation. Using a Pr-doped Y 2 O 3 polycrystalline ceramic host matrix, we observe charging pathways via the inter-band optical absorption of Y 2 O 3 and via the 4f-5d transitions of Pr 3+ . We demonstrate effective control of the density of trapped charges within the Y 2 O 3 matrix at ambient environment. These results point to a viable method for controlling the local charge environment in rare-earth doped crystals via all-optical means, and pave the way for further development of efficient optical storage technologies with ultrahigh storage capacity, as well as for the localized control of quantum coherence in rare-earth doped solids.

França, Leonardo V. S. [Pritzker School of Molecul↗

Preparation and electrical conductivity of graphitic carbon-infused copper alloys

By electron-beam (e-beam) melting, we prepared 0.4 wt% carbon-infused copper (CuCv4), and a copper control without carbon addition (CuCv0). Scanning electron microscopy and helium ion microscopy (HIM) were performed on the as-solidified surface, fracture surface, and ion-polished surface of the CuCv4 sample. The results revealed that graphitic carbon flakes cover the as-solidified surface, and carbon nanoparticles and clusters exist in the fracture and ion-polished surfaces. HIM on the ion-polished surface revealed a unique ripple-shaped feature, which is possibly associated with the infusion of carbon nanoribbons in the copper matrix. The bulk densities were measured to be 8.86 and 8.53 g/cm 3 , which correspond to relative densities of 98.9% and 96.4% for the CuCv0 and CuCv4 samples, respectively. Also, apparent electrical conductivities were measured to be 56.9 and 57.5 MS/m, respectively, for the e-beam melted CuCv0 and CuCv4 samples. These values correspond to true electrical conductivities of 100.5% IACS (International Annealed Copper Standard) and 107.4% IACS after correction for the porosity. Thus, our results reveal remarkable promise of using covetic copper for the next generation conductors in energy applications from microelectronic devices to high-power transmission cables.

36 MATERIALS SCIENCE↗

Defect-engineered GaN high electron mobility transistors for enhanced radiation tolerance

This study explores the radiation resilience of GaN high-electron-mobility transistors (HEMTs) under various preconditioning treatments—pristine, electro-pulsed, electrically overstressed, and 60 Co gamma-irradiated—with a focus on enhancing survivability in high-radiation environments. Key findings emphasize the gate region’s central role in radiation sensitivity, with increased defect concentrations leading to reduced sensitivity—as determined from reduced single-event transient intensities during pulsed-laser studies—and impacting charge-transport dynamics. Notably, the most sensitive region shifted as a function of bias state, with the drain side of the gate being most sensitive under negative gate bias and the source side under unbiased conditions due to two-dimensional electron gas disruptions. These insights clarify the mechanisms influencing radiation sensitivity in microelectronics and highlight the potential of defect and strain engineering to enhance the radiation hardness of GaN HEMTs across various operational states, providing valuable guidance for applications in space, defense, and other radiation-rich environments.

36 MATERIALS SCIENCE↗

Point defects in semiconductors: Friends and foes for quantum technologies

Point defects in semiconductors are both a curse and a blessing in microelectronics: they enable the control of electrical conductivity through doping, yet can also act as trapping and recombination centers that degrade device performance. In quantum information science, defects play a similarly dual role. They can be harnessed as spin–photon interfaces enabling the coupling of electronic and nuclear spins to light and the creation of distributed entanglement for quantum networks or used as atomistic scale sensors for quantum sensing. At the same time, defects are a major source of decoherence for superconducting qubits, one of the leading quantum computing platforms. This article discusses how a deeper materials-level understanding of defects can guide the design of improved quantum devices for communication, sensing, and computation.

Zhu, Yizhi [Rice University, Houston, TX (United S↗

An interface tracking model for droplet electrocoalescence.

This report describes an Early Career Laboratory Directed Research and Development (LDRD) project to develop an interface tracking model for droplet electrocoalescence. Many fluid-based technologies rely on electrical fields to control the motion of droplets, e.g. microfluidic devices for high-speed droplet sorting, solution separation for chemical detectors, and purification of biodiesel fuel. Precise control over droplets is crucial to these applications. However, electric fields can induce complex and unpredictable fluid dynamics. Recent experiments (Ristenpart et al. 2009) have demonstrated that oppositely charged droplets bounce rather than coalesce in the presence of strong electric fields. A transient aqueous bridge forms between approaching drops prior to pinch-off. This observation applies to many types of fluids, but neither theory nor experiments have been able to offer a satisfactory explanation. Analytic hydrodynamic approximations for interfaces become invalid near coalescence, and therefore detailed numerical simulations are necessary. This is a computationally challenging problem that involves tracking a moving interface and solving complex multi-physics and multi-scale dynamics, which are beyond the capabilities of most state-of-the-art simulations. An interface-tracking model for electro-coalescence can provide a new perspective to a variety of applications in which interfacial physics are coupled with electrodynamics, including electro-osmosis, fabrication of microelectronics, fuel atomization, oil dehydration, nuclear waste reprocessing and solution separation for chemical detectors. We present a conformal decomposition finite element (CDFEM) interface-tracking method for the electrohydrodynamics of two-phase flow to demonstrate electro-coalescence. CDFEM is a sharp interface method that decomposes elements along fluid-fluid boundaries and uses a level set function to represent the interface.

Erickson, Lindsay Crowl↗

Modeling tin whisker growth.

Tin, lead, and lead-tin solders are the most commonly used solders due to their low melting temperatures. However, due to the toxicity problems, lead must now be removed from solder materials. This has lead to the re-emergence of the issue of tin whisker growth. Tin whiskers are a microelectronic packaging issue because they can lead to shorts if they grow to sufficient length. However, the cause of tin whisker growth is still not well understood and there is lack of robust methods to determine when and if whiskering will be a problem. This report summarizes some of the leading theories on whisker growth and attempts to provide some ideas towards establishing the role microstructure plays in whisker growth.

Weinberger, Christopher Robert↗

Computational modeling of drug-resistant bacteria. Final report

Initial proposal summary: The evolution of antibiotic-resistant mutants among bacteria (superbugs) is a persistent and growing threat to public health. In many ways, we are engaged in a war with these microorganisms, where the corresponding arms race involves chemical weapons and biological targets. Just as advances in microelectronics, imaging technology and feature recognition software have turned conventional munitions into smart bombs, the long-term objectives of this proposal are to develop highly effective antibiotics using next-generation biomolecular modeling capabilities in tandem with novel subatomic feature detection software. Using model compounds and targets, our design methodology will be validated with correspondingly ultra-high resolution structure-determination methods at premier DOE facilities (single-crystal X-ray diffraction at Argonne National Laboratory, and neutron diffraction at Oak Ridge National Laboratory). The objectives and accomplishments are summarized.

60 APPLIED LIFE SCIENCES↗

Unclonable RFID-based tag-seal for storage containers

We are using the DoD MIL-STD as our guide for microelectronics aging (MIL-STD 883J, Method 1016.2: Life/Reliability Characterization Tests). In that document they recommend aging at 3 temperatures between 200-300C, separated by at least 25C, with the supply voltage at the maximum recommended voltage for the devices at 125C (3.6V in our case). If that voltage causes excessive current or power then it can be reduced and the duration of the tests extended. The MIL-STD also recommends current limiting resistors in series with the supply. Since we don’t have much time and we may not have enough ovens and other equipment, two temperatures separated by at least 50C would be an acceptable backup plan. To ensure a safe range of conditions is used, we are executing 24-hour step tests. For these, we will apply the stress for 24 hours and then measure the device to make sure it wasn’t damaged. During the stress the PUFs should be exercised, but we don’t need to measure their response. Rather, at set intervals our devices should be returned to nominal temperature (under bias), and then measured. The MIL-STD puts these intervals at 4, 8, 16, 32, 64, 128, 256, 512 and 1000 hours, although the test can be stopped early if 75% of the devices have failed. A final recommendation per the MIL-STD is that at least 40 devices should be measured under each condition. Since we only have 25 parts, we will place 10 devices in each of two stress conditions.

25 ENERGY STORAGE↗

Progress report of Sandia National Laboratories (SNL) contribu- tion to IAEA CRP F11016 on ?Utilization of ion accelerators for studying and modeling of radiation induced defects in semicon- ductors and insulators? 3rd RCM.

This report presents the results of Sandia National Laboratories’ (SNL) contribution to IAEA CRP F11016 as mostly raw data. The goal of this CRP is to study the effects of radiation on semiconductors and insulators with the emphasis on the effect of displacement damage due to MeV energy ions on the performance of semiconductor detectors and microelectronic devices. SNL is tasked with performing electrical characterization, irradiation, and IBIC, DLTS, C-­V measurements on devices used in the CRP, as well as calculating damage and ionization profiles for modeling.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Microfabrication Capabilities & Device Architectures

The last two decades have seen an explosion in worldwide R&D, enabling fundamentally new capabilities while at the same time changing the international technology landscape. The advent of technologies for continued miniaturization and electronics feature size reduction, and for architectural innovations, will have many technical, economic, and national security implications. It is important to anticipate possible microelectronics development directions and their implications on US national interests. This report forecasts and assesses trends and directions for several potentially disruptive microfabrication capabilities and device architectures that may emerge in the next 5-10 years.

42 ENGINEERING↗

Trends in Microfabrication Capabilities & Device Architectures

The last two decades have seen an explosion in worldwide R&D, enabling fundamentally new capabilities while at the same time changing the international technology landscape. The advent of technologies for continued miniaturization and electronics feature size reduction, and for architectural innovations, will have many technical, economic, and national security implications. It is important to anticipate possible microelectronics development directions and their implications on US national interests. This report forecasts and assesses trends and directions for several potentially disruptive microfabrication capabilities and device architectures that may emerge in the next 5-10 years.

36 MATERIALS SCIENCE↗

Investigation of Donor and Acceptor Ion Implantation in AlN

AlGaN alloys with high Al composition and AlN based electronic devices are attractive for high voltage, high temperature applications, including microwave power sources, power switches and communication systems. AlN is of particular interest because of its wide bandgap of ~6.1eV which is ideal for power electronic device applications in extreme environments which requires high dose ion implantation. One of the major challenges that need to be addressed to achieve full utilization of AlN for opto and microelectronic applications is the development of a doping strategy for both donors and acceptors. Ion implantation is a particularly attractive approach since it allows for selected-area doping of semiconductors due to its high spatial and dose control and its high throughput capability. Active layers in the semiconductor are created by implanting a dopant species followed by very high temperature annealing to reduce defects and thereby activate the dopants. Recovery of implant damage in AlN requires excessively high temperature. In this SBIR program we began the investigation by simulation of ion beam implantation profiles for Mg, Ge and Si in AlN over wide dose and energy ranges. Si and Ge are implanted to achieve the n-type doping, Mg is investigated as a p-type doping. The simulation of implantation profiles were performed in collaboration between NRL and Agnitron using a commercial software known as Stopping and Range of Ions in Matter (SRIM). The simulation results were then used as the basis for ion implantation of AlN samples. The implanted samples were annealed by an innovative technique under different conditions and evaluated along the way. Raman spectroscopy and XRD were used to determine the crystal quality of the implanted samples, demonstrating the effectiveness of annealing in removing implant induced damage. Additionally, SIMS was used to verify that a nearly uniform doping profile was achieved near the sample surface. The electrical characteristics of the implanted samples were evaluated by TLM and Hall techniques. Generally, the implanted samples before and after annealing were found to be very resistive. Further work is required before the superior properties of AlN can be fully utilized.

24 POWER TRANSMISSION AND DISTRIBUTION↗

Hardness Assurance for Low-Energy Proton-Induced Single-Event Effects: Final report for LDRD Project 173134

This report briefly summarizes three publications that resulted from a two-year LDRD. The three publications address a recently emerging reliability issue: namely, that low-energy protons (LEPs) can cause single-event effects (SEEs) in highly scaled microelectronics. These publications span from low to high technology readiness levels. In the first, novel experiments were used to prove that proton direct ionization is the dominant mechanism for LEP-induced SEEs. In the second, a simple method was developed to calculate expected on-orbit error rates for LEP effects. This simplification was enabled by creating (and characterizing) an accelerated space-like LEP environment in the laboratory. In the third publication, this new method was applied to many memory circuits from the 20-90 nm technology nodes to study the general importance of LEP effects, in terms of their contribution to the total on-orbit SEE rate.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗

High speed radiation tolerant data links

This project was slated to design and develop Rad-Hard IP components for 1Gb/s links and supporting hardware designs such as PLL, SER/DES, pad drivers and receivers and custom protocol hardware for the 1Gb/s channel. Also included in the proposal was a study of a hardened memory to be used as a packet buffer for channel and data concentrator components to meet the 1 Gb/s specification. Over the course of the proposal, technology change and innovation of hardware designs lead us away from the 1 Gb/s goal to contemplate much higher performance link IP which, we believed better met the goals of physics experiments. Note that CERN microelectronics had managed to create a 4.7 Gb/s link designed to drive optical fibers and containing infrastructure for connecting much lower bandwidth front-end devices. Our own work to that point had shown the possibility of constructing a link with much lower power, lower physical overhead but of equivalent performance that could be designed to integrate directly onto the front-end ASIC (ADC and data encoding) designs. Substantial overall power savings and experimental simplicity could be achieved by eliminating data transmission to data concentrators and data concentrators and related hardened buffering themselves, with conversion to optical media at a removed distance from the experiment core. We had already developed and tested Rad-Hard SER/DES components (1Gb in 130nm standard cells) and redundant Pad Drivers/Receivers (3+ Gb/s designed and measured performance), and had a viable 1Gb/s link design based on redundant a stuttered clock receiver and classical PLL, so the basic goals of the proposal had been achieved. Below, in chronological order, are the products and tools we constructed, as well as our tests and publications.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

Recovery Act: High-Temperature Circuit Boards for use in Geothermal Well Monitoring Applications

The U.S. Department of Energy is leading the development of alternative energy sources that will ensure the long-term energy independence of our nation. One of the key renewable resources currently being advanced is geothermal energy. To tap into the large potential offered by generating power from the heat of the earth, and for geothermal energy to be more widely used, it will be necessary to drill deeper wells to reach the hot, dry rock located up to 10 km beneath the earth’s surface. In this instance, water will be introduced into the well to create a geothermal reservoir. A geothermal well produced in this manner is referred to as an enhanced geothermal system (EGS). EGS reservoirs are typically at depths of 3 to 10 km, and the temperatures at these depths have become a limiting factor in the application of existing downhole technologies. These high temperatures are especially problematic for electronic systems such as downhole data-logging tools, which are used to map and characterize the fractures and high-permeability regions in underground formations. Information provided by these tools is assessed so that underground formations capable of providing geothermal energy can be identified, and the subsequent drilling operations can be accurately directed to those locations. The mapping of geothermal resources involves the design and fabrication of sensor packages, including the electronic control modules, to quantify downhole conditions (300°C temperature, high pressure, seismic activity, etc.). Because of the extreme depths at which these measurements are performed, it is most desirable to perform the sensor signal processing downhole and then transmit the information to the surface. This approach necessitates the use of high-temperature electronics that can operate in the downhole environment. Downhole signal processing in EGS wells will require the development and demonstration of circuit boards that can withstand the elevated temperatures found at these depths. At present, the highest-temperature commercially available circuit boards are based on polyimide materials, and those have maximum use temperatures of 200 to 250°C. In addition to thermal stability, downhole electronics must also be fabricated into high-aspect-ratio packages. For example, the multilayer assemblies produced at SNL were approximately 2.5 cm wide and 50 cm long. Because of this very high form factor, glass-fiber-reinforced polymers are much more desirable than multilayer ceramic modules (MCM). MCMs have many advantages for some applications, but are susceptible to damage induced by the mechanical and vibrational loads commonly experienced by data-logging tools. Thus, as EGS technology continues to advance, there is a strong need for multilayer electronics that can provide the necessary thermal performance while also being compatible with high-form-factor circuit designs. This project involved the design and development of high-temperature circuit materials, as well as the fabrication and testing of circuit components. The material development included the evaluation of various polymer/fiberglass composites, whereas the circuit components were tested using conventional microelectronic evaluation techniques. This effort targeted development of a new class of high-temperature multilayer circuit boards for use in downhole data-logging applications where temperatures are on the order of 300°C. This is consistent with DOE’s multiyear plan for advancing technologies for use in enhanced geothermal systems. Organic and inorganic polymer systems, both with glass reinforcements, were considered to provide the following performance at elevated temperatures: • Mechanical strength and durability • High dielectric strength and electrical resistivity • Thermal stability • Strong adhesion to copper to ensure the reliability of the multilayer assemblies • Processing characteristics that are consistent with state-of-the-art multilayer circuit board manufacturing practices

15 GEOTHERMAL ENERGY↗

Toward Molecular Engineering of Polymer Glasses

Glass formation has been central to fabrication technologies since the dawn of civilization. Glasses not only encompass window panes, the insulation in our homes, the optical fibers supplying our cable TV, and vessels for eating and drinking, but they also include a vast array of ‘‘plastic’’ polymeric materials. Glasses find applications in high technology (e.g., producing microelectronic materials, etc., amorphous semiconductors), and recent advances have created ‘‘plastic metallic glasses’’ that are promising for fabricating everyday structural materials. Many commercially relevant systems, such as microemulsions and colloidal suspensions, have complex molecular structures and thus solidify by glass formation. Despite the importance of understanding the fundamental nature of glass formation for the synthesis of new materials, a predictive molecular theory has been lacking. Much of our understanding of glass formation derives from the analysis of experimental data, a process that has uncovered a number of interesting universal behaviors, namely, relations between properties that are independent of molecular details. However, these empirically derived relations and their limitations remain to be understood on the basis of theories, and, more importantly, there is strong need for theories of the explicit variation with molecular system to enable the rational design and tailoring of new materials. We have recently developed the generalized entropy theory, the only analytic, theory that enables describing the dependence of the properties of glass-formation on monomer molecular structures. These properties include the two central quantities of glass formation, the glass transition temperature and the glass fragility parameter, material dependent properties that govern how a material may be processed (e.g., by extrusion, ink jet, molding, etc.) Our recent works, which are further described below, extend the studies of glass formation in polymer systems to test the theory by directly comparing between the predictions of our generalized entropy theory with experiment and with simulations and to expand the vistas of the theory to describe a wider range of important systems (e.g. glass formation in binary blends and systems with specific interactions) and phenomena that are describable by the generalized entropy theory. In addition, we have addressed longstanding fundamental problems associated with the validity of the Adam-Gibbs theory, one of the underpinnings of the general entropy theory. Theoretical advances to enable describing the properties of glass-formation over a wider class of important polymeric systems, included semi-flexible systems, the more general situation of specific interactions, and more. Our recent work removes the simplest approximation uses the simplest model in which the interaction is approximated by a single, monomer average. Thus, the theory has been extended to allow some variations of the energy parameters between the atoms within the monomers. The theory has also been extended to include all the contributions from chain semi-flexibility. Both projects are extremely difficult, but the payback is that the process of solving the problems developed strong theoretical skills in Dr. Xu, who has recently begun a postdoc position at ORNL. The theory has also been extended to describe glass formation in partially miscible blends, with good general agreement with experiment. Again, the development of the theory presented an extremely difficult problem, but the payback is the development of a theory for a very important class of systems. Another project provides an extremely simple approximation for certain properties of glass formation in polymer melts and should make the theory more accessible to everyone.

36 MATERIALS SCIENCE↗

Corrosion Monitors for Embedded Evaluation

We have developed and characterized novel in-situ corrosion sensors to monitor and quantify the corrosive potential and history of localized environments. Embedded corrosion sensors can provide information to aid health assessments of internal electrical components including connectors, microelectronics, wires, and other susceptible parts. When combined with other data (e.g. temperature and humidity), theory, and computational simulation, the reliability of monitored systems can be predicted with higher fidelity.

47 OTHER INSTRUMENTATION↗