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At least 487 records · Page 27
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

Temporal and spatial laser intensification within nodular defects overcoated with multilayer dielectric mirrors over a wide range of defect geometries

The nodular defect shape and the laser incidence angle have a dramatic impact on the spatial distribution of light intensification within the nodule as well as how the laser light is drained from the defect. Nodular defect geometries unique to ion beam sputtering, ion-assisted deposition, and electron-beam (e-beam) deposition, respectively, are modeled in this parametric study over a wide range of nodular inclusion diameters and layer count for optical interference mirror coatings constructed with quarter-wave thicknesses and capped with a half wave of the low index material. It was found for hafnia ($n$=1.9) and silica ($n$=1.45) multilayer mirrors that the light intensification in nodular defects with a $C$ factor of 8, typical of e-beam deposited coatings deposited with a wide range of deposition angles, was maximized for a 24-layer design. For intermediate size inclusion diameters, increasing the layer count for normal incidence multilayer mirrors reduced the light intensification within the nodular defect. A second parametric study explored the impact of the nodule shape on the light intensification for a fixed number of layers. In this case, there is a strong temporal trend for the different nodule shapes. Narrow nodules tend to drain more laser energy through the bottom of the nodule into the substrate while wide nodules tend to drain more laser energy through the top of the nodule when irradiated at normal incidence. Further, at a 45° incidence angle, waveguiding is an additional method to drain laser energy from the nodular defect. Finally, laser light resonates within nodular defects longer than within the adjacent nondefective multilayer structure.

47 OTHER INSTRUMENTATION↗
DOE OSTI2024

Flash healing of laser-induced graphene

The advancement of laser-induced graphene (LIG) technology has streamlined the fabrications of flexible graphene devices. However, the ultrafast kinetics triggered by laser irradiation generates intrinsic amorphous characteristics, leading to high resistivity and compromised performance in electronic devices. Healing graphene defects in specific patterns is technologically challenging by conventional methods. Herein, we report the rapid rectification of LIG’s topological defects by flash Joule heating in milliseconds (referred to as F-LIG), whilst preserving its overall structure and porosity. The F-LIG exhibits a decreased I D /I G ratio from 0.84 – 0.33 and increased crystalline domain from Raman analysis, coupled with a 5-fold surge in conductivity. Pair distribution function and atomic-resolution imaging delineate a broader-range order of F-LIG with a shorter C-C bond of 1.425 Å. The improved crystallinity and conductivity of F-LIG with excellent flexibility enables its utilization in high-performance soft electronics and low-voltage disinfections. Notably, our F-LIG/polydimethylsiloxane strain sensor exhibits a gauge factor of 129.3 within 10% strain, which outperforms pristine LIG by 800%, showcasing significant potential for human-machine interfaces.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Creep and Creep Fracture Modeling with Surrogate Creep Models and the Extended Finite Element Method

Alloy components in advanced nuclear reactors will be subjected to environmental conditions that could include high temperatures, irradiation, and exposure to corrosive salts. These conditions could lead to the formation of crack-like defects, which could grow over time in a mechanism known as creep crack growth (CCG). Predicting growth rates of these defects is important for assessing the safe operating life of advanced reactors. This project documents progress toward developing and testing next-generation data-driven constitutive models for deformation creep. It also documents the application of the extended finite element method in conjunction with surrogate creep models to predict CCG parameters under a variety of conditions. These important incremental developments contribute to the longer-term objective of developing microstructure-aware constitutive models that can be used for predicting creep deformation and CCG at the component scale with improved accuracy.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Resolving atomic transport through iron oxide under irradiation using isotopic tracers

Structural materials in nuclear environments are exposed to complex and harsh conditions, including high temperatures, corrosive solutions, and irradiation. Material stability and likewise degradation are fundamentally controlled by atomic transport mechanisms. Here, we investigate the influence of radiation-induced, non-equilibrium point defect populations on mass transport within model oxide systems using isotopic tracers and atom probe tomography. An isotopically labelled hematite (a-Fe2O3) film was synthesized with 16O- and 18O-rich layers (>30nm and 10 nm, respectively) sequentially deposited via molecular beam epitaxy. One region of the film was proton irradiated to ~0.1 dpa at 450°C, and regions outside the beam spot provided a non-irradiated control of thermal annealing only. 3D APT was used to directly visualize the elemental and O-isotopic redistribution following both thermal and combined thermal and irradiation conditions. Complementary scanning transmission electron microscopy (STEM) was also employed to study the microstructural evolution. Error function fits of the 18O-concentration profiles enabled quantification of diffusion coefficients.

isotopic tracers, diffusion, proton irradiation, h↗
DOE OSTI2025

Distinctive features of structural evolution and thermodynamic response in wide-bandgap semiconductors driven by intense electronic excitation

Radiation-tolerant material selection requires balancing lattice rigidity, defect dynamics, and electronic stability, as shown by covalent SiC outperforming ionic Ga 2 O 3 and GaN under extreme environments. Responding to intense electronic excitation, irradiation-driven phase segregation (β → δ/κ in Ga 2 O 3 ) and core–shell track (disordered structure in GaN), accompanied by elemental redistribution, contrastingly, exceptional radiation tolerance manifested by comparatively minimal lattice distortion (0.17 % strain variation) was demonstrated in SiC. These differential responses are primarily attributed to two fundamental mechanisms: (i) thermodynamic driving forces governing defect migration and phase separation, and (ii) the synergistic effects of robust covalent bonding composition coupled with efficient defect recombination processes. Here, the stronger electron–phonon (e-ph) coupling in Ga 2 O 3 (4.34 × 1018 W m −3 K −1 ) and GaN (3.55 × 10 18 W m −3 K −1 ) enhances lattice energy deposition, triggering thermal spikes (ΔT ≫ T m ) and structural transition behaviors, whereas weaker e-ph coupling in SiC (3.69 × 10 18 W m −3 K −1 ), relatively high thermodynamic parameters and efficient energy dissipation suppress thermal spikes to maintaining lattice integrity. The photoresponse degradation driven by enhanced radiative recombination is dominant in N-doped SiC, while V-doped systems achieve defect-mediated photoconduction optimization characterized by abrupt current transitions, matching fluorescence yield evolutions, and directly connecting defect engineering to optoelectronic performance.

Intense electronic excitation↗
DOE OSTI2025

Ionization-driven competitive (recovery) process in pre-damaged KTaO 3 : A brief review

The nuclear (S n ) and electronic (S e ) energy dissipation processes have been considered to be independent and largely uncorrelated, influencing our understanding of ion–solid interaction and damage processes in the last decades. Recently, however, it has become more generally accepted that S n and S e are coupled as they interact both in time and space. To decouple these processes, separating these effects in experiments using sequential dual-beam irradiations have become accepted as the logical path to advance the understanding of complex interactions between S e and pre-existing defects that may be created from displacement events. This experimental approach has been recently applied to studies of KTaO 3 to reveal new insights into this critical research topic. Here, we offer a forward-looking and comprehensive perspective on the fundamental coupling between Se and pre-existing defects in KTaO 3 . The origins behind the competitive two-stage phase transition process leading to damage healing are revealed and discussed. Furthermore, the evidence resulting from synergistic effects is also included for comparison. Additionally, our findings are rationalized using both Se and the ion velocity as key parameters. We highlight how the inelastic thermal spike (i-TS) calculations provide insights into the nature of this coupled process and further confirm that the ion velocity effect governs annealing kinetics. This work emphasizes that through the introduction of a small amount of local disorder in materials, MeV ion irradiation (i.e., not extreme S e ) may also be one additional option in subsequent material modification and functionalization.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2023

Trap characterization of high-growth-rate laser-assisted MOCVD GaN

A detailed study comparing defect incorporation between laser-assisted metal-organic chemical vapor deposition (MOCVD)-grown GaN and conventional low- and high-growth-rate MOCVD GaN was conducted. Using deep-level transient and optical spectroscopy, traps throughout the bandgap were characterized where traps were found at EC-0.25 eV, EC-0.57 eV, EC-0.72 eV, EC-0.9 eV, EC-1.35 eV, EC-2.6 eV, and EC-3.28 eV in all three samples. This indicates no new traps were observed in the laser-assisted MOCVD GaN sample. Overall, the trap concentrations in the laser-assisted MOCVD sample were ∼2× higher than the optimal low-growth-rate sample, but this is primarily due to the increase in gallium vacancy EC-2.6 eV and carbon-related EC-3.28 eV trap concentrations. The EC-0.9 eV trap concentration was ∼2× higher in the laser-assisted sample, so proton irradiation experiments were conducted to identify the physical source of this level. The results indicated this was a native point defect likely related to gallium interstitials. Overall, this study shows that the laser-assisted MOCVD growth method is promising for future thick, high-quality GaN epilayers after further growth optimizations.

Physics↗
DOE OSTI2025

Coupled cluster and dislocation dynamics modeling of microstructure evolution in irradiated materials

We develop here a coupled cluster and dislocation dynamics framework to study the microstructure evolution of irradiated materials. The framework not only accounts for the three dimensional diffusion of radiation-generated clusters, but also their interaction with dislocation networks and the resultant climb motion of discrete dislocations within finite crystals. The framework is solved with a superposition solution scheme, and is applied to investigate the evolution of the irradiation-induced dislocation loops in zirconium (Zr), considering the effects of various bias factors including the diffusion anisotropy difference (DAD) of interstitials and interstitial clusters, the dislocation bias of defects to discrete dislocation segments, and the production bias of defects from the radiation cascade. We find that the DAD is the most critical factor influencing the kinetics of the loop evolution in Zr, while the recombination/interaction of mobile defects can induce a strong spatial dependence of the loop evolution together with the DAD. Here, the method is also adopted to study the evolution of interstitial $\langle$a$\rangle$ and vacancy $\langle$c$\rangle$ dislocation loop ensembles consistent with the microstructure observed during irradiation-induced growth of Zr. Our findings not only reveal the spatial dependence of the size and ellipticity of the dislocation loops, but also suggest a limit on the anisotropy factor of interstitials to reproduce the co-growth of $\langle$a$\rangle$ and $\langle$c$\rangle$ loops in zirconium, in good agreement with experimental observations and other simulation results.

Bias factors↗
DOE OSTI2021

Unraveling the Early-Stage Ordering of Krypton Solid Bubbles in Molybdenum: A Multimodal Study

Self-organization of defects such as fission gas bubbles in materials can lead to high inventory capacity for fission gas storage and help mitigate swelling caused by fission gases in nuclear fuel materials under radiation in nuclear reactors. Here, we report the physical mechanism of self-organization of krypton (Kr) gas bubbles in molybdenum (Mo) under ion implantation. The ion fluence and temperature-dependent formation of Kr solid bubble superlattice (SBS) in Mo were investigated by using both synchrotron-based small-angle X-ray scattering (SAXS) and transmission electron microscopy (TEM). Early stage self-organization of gas bubbles is observed at a fluence of 2.5 × 10 16 ions/cm 2 at temperatures of 300–400 °C. The bubble lattice constant increases with increasing implantation temperature from 300 to 400 °C. Both experiments and atomic kinetic Monte Carlo modeling indicate that the Kr solid bubbles are weakly ordered in comparison to previously studied helium (He) gas bubble superlattice (GBS) while the lattice constant are relatively smaller for Kr SBS compared to that of He GBS. The irradiation conditions suggest that spinodal decomposition, which is a form of phase separation, probably precedes gas bubble ordering in Mo. Altogether, our work sheds light on the formation mechanism of noble gas superlattice toward the development of radiation-tolerant materials which are important for the design of advanced nuclear reactors.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Topological phase transition to a hidden charge density wave liquid

Charge density waves (CDWs), electronic crystals that form within a host solid, have long been speculated to melt into a spatially textured electronic liquid. Though they have not been previously detected, liquid CDWs may nonetheless be fundamental to the phase diagrams of many correlated electron systems, including high temperature superconductors and quantum Hall states. In one of the most promising candidate materials capable of hosting a liquid CDW, 1T-TaS2, a structural phase transition impedes its observation. Here, by irradiating the material with a femtosecond light pulse, we circumvent the structural phase transition to reveal how topological defect dynamics govern the otherwise invisible CDW correlations. Upon photoexcitation, the CDW diffraction peaks broaden azimuthally, initially revealing a hexatic state. At higher temperatures, photoexcitation completely destroys translational and orientational order and only a ring of diffuse scattering is observed, a key signature of a liquid CDW. Our work provides compelling evidence for a defect-unbinding transition to a CDW liquid and presents a protocol for uncovering states that are hidden by other transitions in thermal equilibrium.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2024

InP- and GaAs-Based 0.6 eV GaInAs Devices for Thermophotovoltaics and Laser Power Conversion

Emerging applications such as thermal energy grid storage, waste heat recovery and portable power generation require efficient thermophotovoltaic (TPV) converters tuned to temperatures near 1000 Degrees Celsius or below. Metamorphic GaInAs with larger lattice constants than InP present a promising option for these needs. The ability to grow these devices on GaAs substrates instead of more expensive InP would enhance the scalability of these devices. In this talk, we present inverted metamorphic Ga0.3In0.7As photovoltaic converters with sub-0.60 eV bandgaps grown on InP and GaAs substrates. These devices are realized using InAsP or GaInP/InAsP compositionally graded buffers which exhibit threading dislocation densities of 1.3 +/- 0.6 x 106 cm-2 and 8.9 +/- 1.7 x 106 cm-2 on InP and GaAs, respectively. Despite this difference in defect density, the devices generate similar open-circuit voltages of 0.386 V and 0.383 V, respectively, under irradiance producing a short-circuit current density of -10 A/cm2, with bandgap-voltage offsets of 0.20 and 0.21 V. We estimate their thermophotovoltaic efficiency using these measurements coupled with broadband reflectance measurments. The InP-based cell is estimated to yield 1.09 W/cm2 at 1100 Degrees Celsius vs. 0.92 W/cm2 for the GaAs-based cell, with TPV efficiencies of 16.8 vs. 9.2%. Both devices are limited by sub-bandgap absorption, which we assess largely occurs in the graded buffers. We estimate that the 1100 Degrees Celsius thermophotovoltaic efficiencies would increase to 24.0% and 20.7% in structures with the graded buffer removed, if previously demonstrated reflectance is achieved. These devices also have application as laser power converters in the 2.0-2.3 um atmospheric window. We estimate efficiencies of 36.8% and 32.5% under 2.0 um monochromatic irradiance of 1.86 W/cm2 and 2.81 W/cm2, respectively.

ENGINEERING,MATERIALS SCIENCE,SOLAR ENERGY↗
DOE OSTI2025

Quantitative assessment of Ni + and He + ion irradiation damage in a tungsten heavy alloy under the simulated nuclear fusion environment

A 90W-7Ni-3Fe (wt.%) tungsten heavy alloy has been sequentially Ni + and He + ion irradiated at 700 °C to simulate the high temperature irradiation environment of a fusion reactor interior. W/Ni–Fe-W dual-phase alloys have been proposed to serve as plasma facing materials and require detailed investigation of their behavior under fusion relevant conditions to assess their overall applicability. To evaluate material performance under five years of simulated fusion reactor service, microstructural characterization of the nanoscale defect distribution has been performed on both constituent phases, revealing peak swelling in the W phase of approximately 0.03%. The γ-phase (Ni–Fe-W) is found to swell approximately 0.68% under the same irradiation conditions, indicating significant cavity formation and growth. Additionally, a novel multi-projection imaging approach has been applied to determine the extent of damage segregation along the dual-phase W-to-γ interface and exposes that these interfaces act as sink sites for the accumulation of cavities. Interphase boundaries are noted to possess an 11.8% areal coverage of defects along the boundary plane, primarily on the γ-phase side of the boundary. The accumulation of cavities at these interphase boundaries is anticipated to adversely affect overall material toughness, and this work reveals a pressing need for mechanical property testing of irradiated W–Ni-Fe dual-phase alloys.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2026

Helium co-implantation effects on dislocation loop evolution during in situ ion irradiations of a novel additive-manufactured Fe-9Cr steel alloy

This study examines the impact of helium injection rate on dislocation loop evolution during ion irradiation of a novel, additively manufactured (AM) 9Cr reduced-activation ferritic/martensitic (RAFM) steel. Through in situ transmission electron microscopy ion irradiations and post-irradiation characterization, the effects of simultaneous 1 MeV Kr²⁺ and 12 keV He⁺ ion irradiation at 400°C to 5 dpa with varying helium levels were examined. The findings reveal that helium co-injection significantly increases dislocation loop density, primarily through the formation of small defect features exhibiting contrast and projected morphologies consistent with a⟨100⟩ loops (∼1 nm), while suppressing larger a/2⟨111⟩ loops. The findings underscore the complex interplay among continuously increasing helium content, temperature, and alloy composition in the evolution of dislocation loops under irradiation in RAFM steels. The study highlights the need for further investigation into helium-mediated mechanisms, such as proposed interactions between self-interstitial atoms and helium atoms, to enhance the performance of RAFM steels in advanced nuclear reactors.

ANA2↗
DOE OSTI2022

Probing the Damage Recovery Mechanism in Irradiated Stainless Steels Using In-Situ Microcantilever Bending Test

Single crystalline microcantilevers are fabricated from the base metal and heat-affected zone (HAZ) of a laser welded, neutron irradiated austenitic stainless steel, for scanning electron microscope (SEM) in-situ bending. In the HAZ, cantilevers exhibit higher yield point and lower crack tip blunting displacement than in the base metal and unirradiated archive specimen. These results suggest that radiation-induced defects harden the base metal, whereas the HAZ exhibits annealing of defects leading to mechanical softening. Dislocation nucleation ahead of the crack tip is responsible for ductile blunting behavior and provides a pathway to mitigating helium-induced cracking during weld repairs of irradiated materials.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Ion-beam radiation-induced Eshelby transformations: The mean and variance in hydrostatic and shear residual stresses

Ion beam plays a pivotal role in ion implantations and the fabrication of nanostructures. However, there lacks a quantitative model to describe the residual stresses associated with the ion-beam radiation. Radiation-induced residual stress/transformation strain have been mostly recognized in the hydrostatic sub strain space. Here, in this study, we use molecular dynamics (MD) simulations to show that the response of a material to irradiation is generally anisotropic that depends on the ion-beam direction, and should be described using tensorial quantities. We demonstrate that accelerator-based ion beam irradiation, combined with the intrinsic lattice anisotropy and externally induced anisotropy (such as anisotropic mechanical loadings), causes radiation-actuated shear transformation strains in addition to hydrostatic expansion. We map out these complex correlations for several materials. Radiation-induced defects are shown to be responsible for residual shear stresses in the manner of Eshelby inclusion transformation. We propose such tensorial response model should be considered for accurate nanoscale fabrication using ion-beam irradiation.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2020

Irradiation Creep in Materials

A knowledge of the dimensional stability of reactor structural components, under irradiation conditions, is of major importance in the design of thermal, fast, and fusion reactors. When subjected to simultaneous mechanical loading and irradiation, structural materials exhibit a visco-plastic deformation phenomenon, referred to as irradiation creep, which can be more rapid than the deformation occurring out of irradiation. In this article, the phenomenology of this peculiar behavior is described after a short history of its discovery. Then, the theoretical mechanisms proposed in the literature during these past 60 years are presented, with a special focus on mechanisms based on stress induced preferred absorption of point defects by dislocation loops, dislocations and grain boundaries and on mechanisms based on climb-enhanced glide of dislocations. These mechanisms are discussed in the light of experimental evidences. Finally, irradiation creep in various materials, such as zirconium alloys, austenitic stainless steels, nickel-based alloys, ferritic-martensitic steels and graphite, is described.

Onimus, Fabien↗
DOE OSTI2024

Microstructural and compositional evolutions in $γ$-LiAlO 2 pellets during ion irradiation at an elevated temperature

This study reports on the microstructural, phasic and compositional evolutions of γ-LiAlO 2 during ion irradiation. Polycrystalline γ-LiAlO 2 pellets were irradiated sequentially with He + and D 2 + ions to the same combined fluences of up to 3 × 10 17 (He + +D + )/cm 2 at 773 K. The irradiated pellets were characterized using scanning transmission electron microscopy and atom probe tomography. Surface amorphization likely due to radiolysis and planar defects as a possible precursor for formation of precipitates are created at 5 × 10 16 (He + +D + )/cm 2 , followed by the formation of nano-sized precipitates and fractures at higher doses. Spinel-like precipitates of non-stoichiometric LiAl 5 O 8 and gas-filled cavities are observed to grow with increasing dose. Faceted precipitates and rounded cavities appear at 2 × 10 17 (He + +D + )/cm 2 . With further increasing ion fluence to 3 × 10 17 (He + +D + )/cm 2 , amorphization of the precipitates takes place and micron-sized fractures appear. Surface exfoliation could occur at an extremely high ion fluence. There are compositional changes in the γ-LiAlO 2 pellets during the microstructural evolution. In the precipitate and amorphized regions, Li concentrations decrease to ~7 and 3.7 at.% from 25 at.% in γ-LiAlO 2 , respectively. This study reveals a full-cycle microstructural evolution with corresponding compositional changes in γ-LiAlO 2 pellets during ion irradiation at 773 K. In conclusion, the data could help model, assess, and predict the material performance during neutron irradiation in reactors.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
DOE OSTI2020

Cluster dynamics modeling of irradiation growth in single crystal Zr

Irradiation growth of single-crystal Zr is modeled with a reduced set of cluster dynamics equations. Nucleation and growth of basal and prismatic dislocation loops are both accounted for in the model. Equations are developed for the time evolution of single point defects, a limited number of point defect clusters, interstitial and vacancy loop nucleation rates, as well as for the growth of vacancy loops on basal planes and interstitial loops on prismatic planes. Reduction of the usual infinite hierarchy of cluster dynamics equations to the simple set studied here is justified on the physical basis of the stability of small loops once nucleated. This simplified cluster dynamics model with a small number of adjustable parameters avoids the complexity of explicit representation of higher order point defect clusters. The model shows consistency with experimental observations of the following aspects: (1) the growth rates of Zr crystals along the a- and c-axes; (2) the onset dose for breakaway irradiation growth; (3) the saturation dislocation loop densities of vacancy and interstitial loops; (4) the effects of cold work and temperature on irradiation growth.

36 MATERIALS SCIENCE↗