Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “Gallium arsenide”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 487 records · Page 27
All sourcesNASA NTRSDOE OSTI
NASA NTRS1994

Modeling of high efficiency solar cells under laser pulse for power beaming applications

Solar cells have been used to convert sunlight to electrical energy for many years and also offer great potential for non-solar energy conversion applications. Their greatly improved performance under monochromatic light compared to sunlight, makes them suitable as photovoltaic (PV) receivers in laser power beaming applications. Laser beamed power to a PV array receiver could provide power to satellites, an orbital transfer vehicle, or a lunar base. Gallium arsenide (GaAs) and indium phosphide (InP) solar cells have calculated efficiencies of more than 50 percent under continuous illumination at the optimum wavelength. Currently high power free-electron lasers are being developed which operate in pulsed conditions. Understanding cell behavior under a laser pulse is important in the selection of the solar cell material and the laser. An experiment by NAsA lewis and JPL at the AVLIS laser facility in Livermore, CA presented experimental data on cell performance under pulsed laser illumination. Reference 5 contains an overview of technical issues concerning the use of solar cells for laser power conversion, written before the experiments were performed. As the experimental results showed, the actual effects of pulsed operation are more complicated. Reference 6 discusses simulations of the output of GaAs concentrator solar cells under pulsed laser illumination. The present paper continues this work, and compares the output of Si and GaAs solar cells.

Jain, Raj K.↗
NASA NTRS1994

InGaAs PV device development for TPV power systems

Indium gallium arsenide (InGaAs) photovoltaic devices have been fabricated with bandgaps ranging from 0.75 eV to 0.60 on Indium phosphide (InP) substrates. Reported efficiencies have been as high as 11.2 percent (AMO) for the lattice matched 0.75 eV devices. The 0.75 eV cell demonstrated 14.8 percent efficiency under a 1500 K blackbody with a projected efficiency of 29.3 percent. The lattice mismatched devices (0.66 and 0.60 eV) demonstrated measured efficiencies of 8 percent and 6 percent respectively under similar conditions. Low long wavelength response and high rack currents are responsible for the poor performance of the mismatched devices. Temperature coefficients have been measured and are presented for all of the bandgaps tested.

Wilt, David M.↗
NASA NTRS1994

Universal Test Facility

A universal test facility (UTF) for Space Station Freedom is developed. In this context, universal means that the experimental rack design must be: automated, highly marketable, and able to perform diverse microgravity experiments according to NASA space station requirements. In order to fulfill these broad objectives, the facility's customers, and their respective requirements, are first defined. From these definitions, specific design goals and the scope of the first phase of this project are determined. An examination is first made into what types of research are most likely to make the UTF marketable. Based on our findings, the experiments for which the UTF would most likely be used included: protein crystal growth, hydroponics food growth, gas combustion, gallium arsenide crystal growth, microorganism development, and cell encapsulation. Therefore, the UTF is designed to fulfill all of the major requirements for the experiments listed above. The versatility of the design is achieved by taking advantage of the many overlapping requirements presented by these experiments.

Laughery, Mike↗
NASA NTRS1994

Ampoule failure sensor development for semiconductor crystal growth experiments

Currently there are no devices to detect an ampoule failure in semiconductor crystal growth experiments. If an ampoule fails, it will go undetected until the containing cartridge is breached due to chemical degradation. The experiment will then be terminated resulting in a failed experiment and a loss of data. The objective of this research was to develop a reliable failure sensor that would detect a specific liquid or vapor material before the metallic cartridge is degraded and the processing furnace contaminated. The sensor is a chemical fuse made from a metal with which the semiconductor material reacts more rapidly than it does with the containing cartridge. Upon ampoule failure, the sensor is exposed to the vapor or liquid semiconductor and the chemical reaction causes a resistance change in the sensor material. The sensor shows a step change in resistance on the order of megohms when exposed to mercury zinc telluride (HgZnTe), mercury cadmium telluride (HgCdTe), or gallium arsenide (GaAs). This ampoule failure sensor is being tested for possible use on the second United States Microgravity Mission (USML-2) and is the subject of a NASA patent application.

CHEMICAL FUSE↗
NASA NTRS1994

Theoretical investigation of wave-vector-dependent analytical and numerical formulations of the interband impact-ionization transition rate for electrons in bulk silicon and GaAs

The electron interband impact-ionization rate for both silicon and gallium arsenide is calculated using an ensemble Monte Carlo simulation with the expressed purpose of comparing different formulations of the interband ionization transition rate. Specifically, three different treatments of the transition rate are examined: the traditional Keldysh formula, a new k-dependent analytical formulation first derived by W. Quade, E. Scholl, and M. Rudan (1993), and a more exact, numerical method of Y. Wang and K. F. Brennan (1994). Although the completely numerical formulation contains no adjustable parameters and as such provides a very reliable result, it is highly computationally intensive. Alternatively, the Keldysh formular, although inherently simple and computationally efficient, fails to include the k dependence as well as the details of the energy band structure. The k-dependent analytical formulation of Quade and co-workers overcomes the limitations of both of these models but at the expense of some new parameterization. It is found that the k-dependent analytical method of Quade and co-workers produces very similar results to those obtained with the completely numerical model for some quantities. Specifically, both models predict that the effective threshold for impact ionization in GaAs and silicon is quite soft, that the majority of ionization events originate from the second conduction band in both materials, and that the transition rate is k dependent. Therefore, it is concluded that the k-dependent analytical model can qualitatively reproduce results similar to those obtained with the numerical model yet with far greater computational efficiency. Nevertheless, there exist some important drawbacks to the k-dependent analytical model of Quade and co-workers: These are that it does not accurately reproduce the quantum yield data for bulk silicon, it requires determination of a new parameter, related physically to the overlap intergrals of the Bloch state which can only be adjusted by comparison to experiment, and fails to account for any wave-vector dependence of the overlap integrals. As such the transition rate may be overestimated at those points for which 'near vertical,' small change in k, transitions occur.

Kolnik, Jan↗
NASA NTRS1995

Diffusion lengths in irradiated N/P InP-on-Si solar cells

Indium phosphide (InP) solar cells are being made on silicon (Si) wafers (InP/Si) to take advantage of both the radiation-hardness properties of the InP solar cell and the light weight and low cost of Si wafers compared to InP or germanium (Ge) wafers. The InP/Si cell application is for long duration and/or high radiation orbit space missions. InP/Si cells have higher absolute efficiency after a high radiation dose than gallium arsenide (GaAs) or silicon (Si) solar cells. In this work, base electron diffusion lengths in the N/P cell are extracted from measured AM0 short-circuit photocurrent at various irradiation levels out to an equivalent 1 MeV fluence of 1017 1 MeV electrons/sq cm for a 1 sq cm 12% BOL InP/Si cell. These values are then checked for consistency by comparing measured Voc data with a theoretical Voc model that includes a dark current term that depends on the extracted diffusion lengths.

Wojtczuk, Steven↗
NASA NTRS1995

Characterization testing of MEASAT GaAs/Ge solar cell assemblies

The first commercial communications satellite with gallium-arsenide on germanium (GaAs/Ge) solar arrays is scheduled for launch in December 1995. The spacecraft, named MEASAT, was built by hughes Space and Telecommunications company for Binariang Satellite Systems of Malaysia. The solar cell assemblies consisted of large area GaAs/Ge cells supplied by Spectrolab Inc. with infrared reflecting (IRR) coverglass supplied by Pilkington Space Technology. A comprehensive characterization program was performed on the GaAs/Ge solar cell assemblies used on the MEASAT array. This program served two functions; first to establish the database needed to accurately predict on-orbit performance under a variety of conditions; and second, to demonstrate the ability of the solar cell assemblies to withstand all mission environments while still providing the required power at end-of-life. characterization testing included measurement of electrical performance parameters as a function of radiation exposure, temperature, and angle of incident light; reverse bias stability; optical and thermal properties; mechanical strength tests, panel fabrication, humidity and thermal cycling environmental tests. The results provided a complete database enabling the design of the MEASAT solar array, and demonstrated that the GaAs/Ge cells meet the spacecraft requirements at end-of-life.

Brown, Mike R.↗
NASA NTRS1996

AIN-Coated Al(2)O(3) Substrates For Electronic Circuits

Type of improved ceramic substrate for high-frequency, high-power electronic circuits combines relatively high thermal conductivity of aluminum nitride with surface smoothness of alumina. Consists of 15-micrometer layer of AIN deposited on highly polished alumina. Used for packaging millimeter-wave gallium arsenide transmitter chips, power silicon chips, and like.

Kolawa, Elzbieta↗
NASA NTRS1996

Development of the command data system and ground software for the SEDSAT-1 microsatellite

SEDSAT-1 is designed to be a low cost scientific satellite which is to be used to perform a minimum of five tasks which include: (1) the acquisition of a number of important parameters associated with the tethering processes from the payloads perspective (such as accelerations incurred and imaging data of the tether during deployment), (2) to act as a remote sensing platform for making measurements of the Earth's Atmosphere (allowing research to be performed in such areas as vertical lightning observation, visible light spectrography, and cloud cover studies, (3) to act as a general purpose amateur radio communication satellite relaying information back to earth, (4) to demonstrate the feasibility of the deployment in low earth orbit of advanced technology such as the Gallium Arsenide Solar Cells, Nickel Metal Hydride batteries, and multi-chip module technology and, (5) to support student's active participation in applying the disciplines of engineering and science to space-based hardware platforms. The project includes the Three-axis Accelerometer System, TAS, Experiment which is designed to report the accelerations that the satellite undergoes during the tethering operations and during the second phase of the mission when the free floating satellite comes in contact with orbit debris. The SEASIS (SEDS Earth, Atmosphere, and Space Imaging System) is another SEDSAT experiment designed to provide images of the tether during its deployment and the earth during the second phase of the mission. To control these experiments and virtually all other satellite operations the Command Data System, CDS is employed. This system utilizes a moderate complexity micro-controller controlled by tasks operating under a real-time operating system to dynamically monitor and control the satellite. The scope of this researchers efforts has been in the general area of coordinating and assisting the student researchers with the development of the CDS and ground station interfaces. This included the low level CDS hardware design and the formulization of a general software plan and schedule for both the CDS and ground station portions of the project.

Wells, B. Earl↗
NASA NTRS1996

Diffusion lengths in irradiated N/P InP-on-Si solar cells

Indium phosphide (InP) solar cells were made on silicon (Si) wafers (InP/Si) by to take advantage of both the radiation-hardness properties of the InP solar cell and the light weight and low cost of Si wafers. The InP/Si cell application is for long duration and/or high radiation orbit space missions. Spire has made N/P InP/Si cells of sizes up to 2 cm by 4 cm with beginning-of-life (BOL) AM0 efficiencies over 13% (one-sun, 28C). These InP/Si cells have higher absolute efficiency and power density after a high radiation dose than gallium arsenide (GaAs) or silicon (Si) solar cells after a fluence of about 2e15 1 MeV electrons/sq. cm. In this work, we investigate the minority carrier (electron) base diffusion lengths in the N/P InP/Si cells. A quantum efficiency model was constructed for a 12% BOL AM0 N/P InP/Si cell which agreed well with the absolutely measured quantum efficiency and the sun-simulator measured AM0 photocurrent (30.1 mA/sq. cm). This model was then used to generate a table of AM0 photocurrents for a range of base diffusion lengths. AM0 photocurrents were then measured for irradiations up to 7.7e16 1 MeV electrons/sq. cm (the 12% BOL cell was 8% after the final irradiation). By comparing the measured photocurrents with the predicted photocurrents, base diffusion lengths were assigned at each fluence level. A damage coefficient K of 4e-8 and a starting (unirradiated) base electron diffusion length of 0.8 microns fits the data well. The quantum efficiency was measured again at the end of the experiment to verify that the photocurrent predicted by the model (25.5 mA/sq. cm) agreed with the simulator-measured photocurrent after irradiation (25.7 mA/sq. cm).

Wojtczuk, Steven↗
NASA NTRS1996

Review of recent thermophotovoltaic (TPV) research at Lewis Research Center

Thermophotovoltaic (TPV) research at NASA Lewis Research Center that began in the late 1980's is reviewed. This work has been concentrated on low bandgap indium gallium arsenide (InGaAs) PV cells and rare earth yttrium aluminum garnet (YAG) thin film selective emitters, as well as, TPV system studies. An emittance theory has been developed for the thin film emitters. Experimental spectral emittance results for erbium Er-YAG and holmium Ho-YAG show excellent emittance (greater than or equal to .7) within the emission bands. The .75 eV InGaAs PV cells fabricated at Lewis have excellent quantum efficiency. An efficiency of 13% has been measured for this cell coupled to an Er-YAG selective emitter and a short pass IR filter.

Chubb, Donald L.↗
NASA NTRS1996

Characterization testing of MEASAT GaAs/Ge solar cell assemblies

The first commercial communications satellite with gallium-arsenide on germanium (GaAs/Ge) solar arrays is scheduled for launch in December 1995. The spacecraft, named MEASAT, was built by Hughes Space and Communications Company. The solar cell assemblies consisted of large area GaAs/Ge cells supplied by Spectrolab Inc. with infrared reflecting (IRR) coverglass supplied by Pilkington Space Technology. A comprehensive characterization program was performed on the GaAs/Ge solar cell assemblies used on the MEASAT array. This program served two functions; first to establish the database needed to accurately predict on-orbit performance under a variety of conditions; and second, to demonstrate the ability of the solar cell assemblies to withstand all mission environments while still providing the required power at end-of-life. Characterization testing included measurement of electrical performance parameters as a function of radiation exposure, temperature, and angle of incident light; reverse bias stability; optical and thermal properties; mechanical strength tests, panel fabrication, humidity and thermal cycling environmental tests. The results provided a complete database enabling the design of the MEASAT solar array, and demonstrated that the GaAs/Ge cells meet the spacecraft requirements at end-of-life.

Brown, Mike R.↗
NASA NTRS1996

MMIC Phased Array Demonstrations with ACTS

Over a one year period from May 1994 to May 1995, a number of demonstrations were conducted by the NASA Lewis Research Center (LeRC) in which voice, data, and/or video links were established via NASA's advanced communications technology satellite (ACTS) between the ACTS link evaluation terminal (LET) in Cleveland, OH, and aeronautical and mobile or fixed Earth terminals having monolithic microwave integrated circuit (MMIC) phased array antenna systems. This paper describes four of these. In one, a duplex voice link between an aeronautical terminal on the LeRC Learjet and the ACTS was achieved. Two others demonstrated duplex voice (and in one case video as well) links between the ACTS and an Army vehicle. The fourth demonstrated a high data rate downlink from ACTS to a fixed terminal. Array antenna systems used in these demonstrations were developed by LeRC and featured LeRC and Air Force experimental arrays using gallium arsenide MMIC devices at each radiating element for electronic beam steering and distributed power amplification. The single 30 GHz transmit array was developed by NASA/LeRC and Texas Instruments. The three 20 GHz receive arrays were developed in a cooperative effort with the Air Force Rome Laboratory, taking advantage of existing Air Force array development contracts with Boeing and Lockheed Martin. The paper describes the four proof-of-concept arrays and the array control system. The system configured for each of the demonstrations is described, and results are discussed.

Raquet, Charles A.↗
NASA NTRS1997

Electrical and Optical Performance Characteristics of 0.74-eV p/n InGaAs Monolithic Interconnected Modules

There has been a traditional trade-off in thermophotovoltaic (TPV) energy conversion development between system efficiency and power density. This trade-off originates from the use of front surface spectral controls such as selective emitters and various types of filters. A monolithic interconnected module (MIM) structure has been developed which allows for both high power densities and high system efficiencies. The MIM device consists of many individual indium gallium arsenide (InGaAs) cells series-connected on a single semi-insulating indium phosphide (InP) substrate. The MIM is exposed to the entire emitter output, thereby maximizing output power density. An infrared (IR) reflector placed on the rear surface of the substrate returns the unused portion of the emitter output spectrum back to the emitter for recycling, thereby providing for high system efficiencies. Initial MIM development has focused on a 1 sq cm device consisting of eight (8) series interconnected cells. MIM devices, produced from 0.74-eV InGaAs, have demonstrated V(sub oc) = 3.2 volts, J(sub sc) = 70 mA/sq cm, and a fill factor of 66% under flashlamp testing. Infrared (IR) reflectance measurements (greater than 2 micron) of these devices indicate a reflectivity of greater than 82%. MIM devices produced from 0.55-eV InGaAs have also been demonstrated. In addition, conventional p/n InGaAs devices with record efficiencies (11.7% AM0) have been demonstrated.

Wilt, David M.↗
NASA NTRS1997

Electrical and Optical Performance Characteristics of p/n InGaAs Monolithic Interconnected Modules

There has been a traditional trade-off in ThermoPhotoVoltaic (TPV) energy conversion development between system efficiency and power density. This trade-off originates from the use of front surface spectral controls such as selective emitters and various types of filters. A Monolithic Interconnected Module (MIM) structure has been developed which allows for both high power densities and high system efficiencies. The MIM device consists of many individual Indium Gallium Arsenide (InGaAs) devices series-connected on a single semi-insulating Indium Phosphide (InP) substrate. The MIMs are exposed to the entire emitter output, thereby maximizing output power density. An InfraRed (IR) reflector placed on the rear surface of the substrate returns the unused portion of the emitter output spectrum back to the emitter for recycling, thereby providing for high system efficiencies. Initial MIM development has focused on a 1 sq cm device consisting of eight (8) series interconnected cells. MIM devices, produced from 0.74eV InGaAs, have demonstrated V(sub infinity) = 3.2 volts, J(sub sc) = 70 mA/sq cm and a fill factor of 66% under flashlamp testing. IR reflectance measurements (greater than 2 microns) of these devices indicate a reflectivity of greater than 82%. MIM devices produced from 0.55 eV InGaAs have also been demonstrated. In addition, conventional p/n InGaAs devices with record efficiencies (11.7% AM0) have been demonstrated.

Wilt, David M.↗
NASA NTRS1998

High Rate Digital Demodulator ASIC

The architecture of High Rate (600 Mega-bits per second) Digital Demodulator (HRDD) ASIC capable of demodulating BPSK and QPSK modulated data is presented in this paper. The advantages of all-digital processing include increased flexibility and reliability with reduced reproduction costs. Conventional serial digital processing would require high processing rates necessitating a hardware implementation in other than CMOS technology such as Gallium Arsenide (GaAs) which has high cost and power requirements. It is more desirable to use CMOS technology with its lower power requirements and higher gate density. However, digital demodulation of high data rates in CMOS requires parallel algorithms to process the sampled data at a rate lower than the data rate. The parallel processing algorithms described here were developed jointly by NASA's Goddard Space Flight Center (GSFC) and the Jet Propulsion Laboratory (JPL). The resulting all-digital receiver has the capability to demodulate BPSK, QPSK, OQPSK, and DQPSK at data rates in excess of 300 Mega-bits per second (Mbps) per channel. This paper will provide an overview of the parallel architecture and features of the HRDR ASIC. In addition, this paper will provide an over-view of the implementation of the hardware architectures used to create flexibility over conventional high rate analog or hybrid receivers. This flexibility includes a wide range of data rates, modulation schemes, and operating environments. In conclusion it will be shown how this high rate digital demodulator can be used with an off-the-shelf A/D and a flexible analog front end, both of which are numerically computer controlled, to produce a very flexible, low cost high rate digital receiver.

Ghuman, Parminder↗
NASA NTRS1999

Design and Performance of Tropical Rainfall Measuring Mission (TRMM) Super NiCd Batteries

The Tropical Rainfall Measuring Mission (TRMM) is a joint mission between NASA and the National Space Development Agency (NASDA) of Japan. The observatory is designed to monitor and study tropical rainfall and the associated release of energy that helps to power the global atmospheric circulation shaping both weather and climate around the globe. The spacecraft was launched from Japan on November 27,1997 via the NASDA H-2 launch vehicle. The TRMM Power Subsystem is a Peak Power Tracking system that can support the maximum TRMM load of 815 watts at the end of its three year life. The Power Subsystem consists of two 50 Ampere Hour Super NiCd batteries, Gallium Arsenide Solar Array and the Power System Electronics. This paper describes the TRMM Power Subsystem, battery design, cell and battery ground test performance, and in-orbit battery operations and performance.

Ahmad, Anisa J.↗
NASA NTRS1998

Experiment 13: The Study of Dopant Segregation Behavior During the Growth of GaAs in Microgravity on USML-2

An investigation into the segregation behavior of selenium doped gallium arsenide (Se/GaAs) during directional solidification in the microgravity environment was conducted using the Crystal Growth Furnace (CGF) aboard the second United States Microgravity Laboratory (USML-2). Two crystals were successfully processed on USML-2, which lasted from October 20 to November 7, 1995. The first sample was processed for 67 hours, 45 minutes (MET 5/04:53:45-8/00:23:50) and included 19 hours of growth at 0.5 microns/sec which yielded 3.42 cm of sample length, and 5 hours of growth at 1.5 microns/sec which yielded 2.7 cm of sample. During the second experiment, the furnace temperature was adjusted to move the melt-solid interface position towards the hot end of the furnace. The second sample was processed for 50 hours, 10 minutes (MET 8/18:48:49-10/21:58:54) and included 11 hours of growth at 0.5 microns/sec which yielded 1.98 cm of sample, and 1 hour, 25 minutes of growth at 5.0 microns/sec which yielded 2.6 cm of sample. This sample provides an order of magnitude change in growth rate and reproduces one of the growth rates used during USML-1. In contrast to the results from USML-1, no voids were present in either crystal grown on USML-2. The absence of voids in either sample indicates that growth rate changes alone were not responsible for the formation of voids found in the crystals grown on USML-1. Sections of the ground-based and flight crystals grown on USML-2 were cut and polished. All of the interface demarcation lines expected from the current pulse interface demarcation (CPID) system have been identified. These measurements have been analyzed for interface positions, interface shapes, and growth rates. Using a newly developed technique, based on experimental and numerical results, the seeding interface reproducibility from run to run was <= 2.5 mm. The seeding interface position could be controllably moved, with respect to the furnace zones, by adjusting the control set points of the heating zones. The interface shapes flattened slightly as the interface position moved closer to the hot zone but was always an unfavorable concave into the solid shape. The growth rate was found to equal the furnace translation rate, after a 2 -hour transient, for growth rates <= 1.0 microns/sec. Segregation measurements for the ground-based crystals are indicative of complete mixing behavior, as expected. Segregation measurements of the flight crystals are still in progress.

Matthiesen, David H.↗