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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 487 records · Page 27
All sourcesNASA NTRSDOE OSTI
DOE OSTI2020

Electron-phonon coupling induced intrinsic Floquet electronic structure

Floquet states are a topic of intense contemporary interest, which is often induced by coherent external oscillating perturbation (e.g., laser, or microwave) which breaks the continuous time translational symmetry of the systems. Usually, electron–phonon coupling modifies the electronic structure of a crystal as a non-coherent perturbation and seems difficult to form Floquet states. Surprisingly, we found that the thermal equilibrium electron–phonon coupling in M(MoS) 3 and M(MoSe) 3 (where M is a metallic element) exhibits a coherent behavior, and the electronic structure can be described by the Floquet theorem. Such a coherent Floquet state is caused by a selective giant electron–phonon coupling, with thermodynamic phonon oscillation serving as a driving force on the electronic part of the system. The quasi-1D Dirac cone at the Fermi energy has its band gap open and close regularly. Similarly, the electric current will oscillate even under a constant voltage.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Magnetic freeze-out and anomalous Hall effect in ZrTe 5

The ultra-quantum limit is achieved when a magnetic field confines an electron gas in its lowest spin-polarised Landau level. Here we show that in this limit, electron doped ZrTe 5 shows a metal-insulator transition followed by a sign change of the Hall and Seebeck effects at low temperature. We attribute this transition to a magnetic freeze-out of charge carriers on the ionized impurities. The reduction of the charge carrier density gives way to an anomalous Hall response of the spin-polarised electrons. This behavior, at odds with the usual magnetic freeze-out scenario, occurs in this Dirac metal because of its tiny Fermi energy, extremely narrow band gap and a large g-factor. We discuss the different possible sources (intrinsic or extrinsic) for this anomalous Hall contribution.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

Near and long-term perspectives on strategies to decarbonize China's heavy-duty trucks through 2050

China needs to drastically reduce carbon dioxide (CO 2 ) emissions from heavy-duty trucks (HDTs), a key emitter in the growing transport sector, in order to address energy security concerns and meet its climate targets. We address existing research gaps by modeling feasibility, applicability, and energy and emissions impacts of multiple decarbonization strategies at different points in time. China still relies heavily on coal power, so impacts of new HDT technologies depend on the timing of their introduction relative to progress toward non-fossil power. We use a bottom-up model to simulate HDT energy consumption and CO 2 emissions through 2050. Results show that beginning to deploy battery electric and fuel-cell HDTs as early as 2020 and 2035, respectively, could achieve significant and the largest CO 2 emissions reduction by 2050 with a decarbonized power sector. However, viable near-term strategies-improving efficiency and logistics, switching to liquefied natural gas-could halve HDTs' current diesel consumption and CO 2 emissions by 2050. Our results underscore the need for a mix of near- and long-term policy and technology options to decarbonize China's HDTs.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗
DOE OSTI2023

Effect of environmental screening and strain on optoelectronic properties of two-dimensional quantum defects

Point defects in hexagonal boron nitride (hBN) are promising candidates as single-photon emitters (SPEs) in nanophotonics and quantum information applications. The precise control of SPEs requires in-depth understanding of their optoelectronic properties. However, how the surrounding environment of host materials, including the number of layers, substrates, and strain, influences SPEs has not been fully understood. Here, in this work, we study the dielectric screening effect due to the number of layers and substrates, and the strain effect on the optical properties of carbon dimer and nitrogen vacancy defects in hBN from first-principles many-body perturbation theory. We report that environmental screening causes a lowering of the quasiparticle gap and exciton binding energy, leading to nearly constant optical excitation energy and exciton radiative lifetime. We explain the results with an analytical model starting from the Bethe–Salpeter equation Hamiltonian with Wannier basis. We also show that optical properties of quantum defects are largely tunable by strain with highly anisotropic response, in good agreement with experimental measurements. Our work clarifies the effect of environmental screening and strain on optoelectronic properties of quantum defects in two-dimensional insulators, facilitating future applications of SPEs and spin qubits in low-dimensional systems.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Solving the Bethe-Salpeter equation on a subspace: Approximations and consequences for low-dimensional materials

It is well known that the ambient environment can dramatically renormalize the quasiparticle gap and exciton binding energies in low-dimensional materials, but the effect of the environment on the energy splitting of the spin-singlet and spin-triplet exciton states is less understood. A prominent effect is the renormalization of the exciton binding energy and optical strength (and hence the optical spectrum) through additional screening of the direct Coulomb term describing the attractive electron-hole interaction in the kernel of the Bethe-Salpeter equation. The repulsive exchange interaction responsible for the singlet-triplet splitting, on the other hand, is unscreened within formal many-body perturbation theory. However, Benedict argued that in practical calculations restricted to a subspace of the full Hilbert space, the exchange interaction should be appropriately screened by states outside of the subspace, the so-called S approximation [L. X. Benedict, Phys. Rev. B 66, 193105 (2002)PRBMDO0163-182910.1103/PhysRevB.66.193105]. Here, we systematically explore the accuracy of the S approximation for different confined systems, including a molecule and heterostructures of semiconducting and metallic layered materials. We show that the S approximation is actually exact in the limit of small exciton binding energies (i.e., small direct term) and can be used to significantly accelerate convergence of the exciton energies with respect to the number of empty states, provided that a particular effective screening consistent with the conventional Tamm-Dancoff approximation is employed. We further find that the singlet-triplet splitting in the energy of the excitons is largely unaffected by the external dielectric environment for most quasi-two-dimensional materials.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Avalanches and many-body resonances in many-body localized systems

Here we numerically study both the avalanche instability and many-body resonances in strongly disordered spin chains exhibiting many-body localization (MBL). Finite-size systems behave like MBL within the MBL regimes, which we divide into the asymptotic MBL phase and the finite-size MBL regime; the latter regime is, however, thermal in the limit of large systems and long times. In both Floquet and Hamiltonian models, we identify some landmarks within the MBL regimes. Our first landmark is an estimate of where the MBL phase becomes unstable to avalanches, obtained by measuring the slowest relaxation rate of a finite chain coupled to an infinite bath at one end. Our estimates indicate that the actual MBL-to-thermal phase transition occurs much deeper in the MBL regimes than has been suggested by most previous studies. Our other landmarks involve systemwide many-body resonances: We find that the effective matrix elements producing eigenstates with systemwide many-body resonances are enormously broadly distributed. This broad distribution means that the onset of such resonances in typical samples occurs quite deep in the MBL regimes, and the first such resonances typically involve rare pairs of eigenstates that are farther apart in energy than the minimum gap. Thus we find that the resonance properties define two landmarks that divide the MBL regimes of finite-size systems into three subregimes: (i) at strongest randomness, typical samples do not have any eigenstates that are involved in systemwide many-body resonances; (ii) there is a substantial intermediate subregime where typical samples do have such resonances but the pair of eigenstates with the minimum spectral gap does not, so the size of the minimum gap agrees with expectations from Poisson statistics; and (iii) in the weaker randomness subregime, the minimum gap is larger than predicted by Poisson level statistics because it is involved in a many-body resonance and thus subject to level repulsion. Nevertheless, even in this third subregime, all but a vanishing fraction of eigenstates remain nonresonant and the system thus still appears MBL in most respects. Based on our estimates of the location of the avalanche instability, it might be that the MBL phase is only part of subregime (i) and the other subregimes are entirely in the thermal phase, even though they look localized in most respects, so are in the finite-size MBL regime.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Universal Tripartite Entanglement in One-Dimensional Many-Body Systems

Motivated by conjectures in holography relating the entanglement of purification and reflected entropy to the entanglement wedge cross section, we introduce two related non-negative measures of tripartite entanglement g and h. We prove structure theorems which show that states with nonzero g or h have nontrivial tripartite entanglement. We then establish that in one dimension these tripartite entanglement measures are universal quantities that depend only on the emergent low-energy theory. For a gapped system, we argue that either g≠0 and h=0 or g=h=0, depending on whether the ground state has long-range order. For a critical system, we develop a numerical algorithm for computing g and h from a lattice model. We compute g and h for various CFTs and show that h depends only on the central charge whereas g depends on the whole operator content.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2020

Tuned and screened range-separated hybrid density functional theory for describing electronic and optical properties of defective gallium nitride

We apply a hybrid density functional theory approach, based on a tuned and screened range-separated hybrid (SRSH) exchange-correlation functional, to describe the optoelectronic properties of defective gallium nitride (GaN). SRSH and time-dependent SRSH (TDSRSH) are tuned to produce accurate energetics for the pristine material and applied to the study of a series of point defects in bulk GaN, a blue light-emitting material that degrades in the presence of defects. We first establish the accuracy of the method by comparing the predicted quasiparticle gap and low-energy excitation spectra of (TD)SRSH and many-body perturbation theory for both pristine GaN and GaN containing a single nitrogen vacancy. Aided by the reduced computational cost of (TD)SRSH, we then report on three additional technologically relevant point defects and defect complexes in GaN: the gallium vacancy, the carbon interstitial, and the carbon-silicon complex. We compute the low-energy optical absorption spectra for these defects and show the presence of defect-centered transitions. Furthermore, by estimating the Stokes shift, we predict, in agreement with previous studies, that the carbon substitutional defect is a candidate for the detrimental yellow luminescence in GaN. Furthermore, this study indicates that TDSRSH is a promising and computationally feasible approach for quantitatively accurate, first-principles modeling of defective semiconductors.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Optical imprinting of superlattices in two-dimensional materials

We propose a novel optical method to imprint superlattice structures in two-dimensional electronic systems. By changing the shape of the optical field, we synthesize various lattice structures with different spatial symmetry, periodicity, and strength. We find that the wide optical tunability allows one to tune different properties of the effective band structure, including Chern number, energy bandwidths, and band gaps. We consider the high-frequency regime where the electronic system can remain in the quasi-equilibrium phase for an extended amount of time. The spatiotemporal reconfigurablity of our approach opens up new possibilities to control light-matter interaction to generate novel electronic states and optoelectronic devices.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Review of Direct Neutron Conversion and Detection Processes

Commercial and laboratory neutron detection systems use indirect neutron response of materials like pressurized helium-3 (via nuclear reaction 3He(n, p)3H) to measure and count neutrons emanating from a source. Recently a host of semiconductors, especially a ternary semiconductor of lithium indium diselenide (6LiInSe2) and a quaternary alloy of enriched lithium-6, indium, phosphorous, and selenium (6LiInP2Se6), have shown promising neutron counting possibilities by directly converting neutrons into charge-carrying elements within the body of the semiconductor. These semiconductors have high thermal neutron capture cross sections, suitable energy bandgaps (~2.0 electron volts) for room-temperature operations, and a favorable electronic band structure for efficient electron charge transport. The article examines the semiconductor properties of these compounds in terms of their neutron counting capabilities and possible ways to extract neutron energy information from them. Lithium-6 and boron-10 (with thermal neutron absorption cross sections of 938 ± 6 and 3855 ± 26 barns, respectively) produce charged particles to be measured via indirect neutron interactions. The efficiency of indirect conversion neutron detectors is limited because of the inefficiencies in conversion mechanism. In case of direct conversion, the neutrons create charged particles in a single material for neutron capture and charge collection, increasing detection efficiency. Unlike 3He proportional counters, which provide no neutron energy information, the semiconductors can be used as neutron energy spectrometer. Fully resolved neutron energy by 6LiInP2Se6 from a plutonium-beryllium source has been reported in the literature. We will discuss the influence of these multilayered semiconductors’ crystallographic structures and growth techniques on neutron energy determination.

61 RADIATION PROTECTION AND DOSIMETRY↗
DOE OSTI2022

Effective design of vibro-impact energy harvesting absorbers with asymmetric stoppers

We report that an investigation is carried out for the purpose of simultaneously controlling a base-excited dynamical system and enhancing the effectiveness of a piezoelectric energy harvesting absorber. Amplitude absorbers are included to improve the energy harvested by the absorber with the possibility of activating broadband resonant regions to increase the operable range of the absorber. This study optimizes the stoppers’ ability for the energy harvesting absorber to generate energy by investigating asymmetric gap and stiffness configurations. Medium stiffnesses of 5 x 10 4 N/m and 1 x 10 5 N/m show significant impact on the primary system’s dynamics and improvement in the level of the harvested power for the absorber. A solo stopper configuration when the gap distance is 0.02m improves 29% in peak power and 9% in average power over the symmetrical case. Additionally, an asymmetric stiffness configuration when one of the stiffnesses is 1 x 10 5 N/m and a gap size of 0.02m indicates an improvement of 25% and 8% for peak and average harvested power, respectively, and the second stopper’s stiffness is 5 x 10 3 N/m. Hard stopper configurations shows improvements with both asymmetric cases, but not enough improvements to outperform the system without amplitude stoppers.

42 ENGINEERING↗
DOE OSTI2026

Incident excitation effects on ZnO-based photoluminescence

Zinc oxide (ZnO) is an attractive semiconductor material owing to a wide band gap, large exciton binding energy, and strong luminescent properties. Two distinct spectral regions are present in the room temperature emission of this material: a narrow line in the UV/near-UV region that is excitonic in nature and a lower energy broad emission band centered in the green/yellow region. Commercially available ZnO particles containing excess Zn and oxygen vacancy defect sites (referred to as ZnO:Zn) were excited using three light sources to study different radiative recombination regimes of the as-received powders. First, a UV LED at a center wavelength of 365 nm provided low irradiance (0.02–0.08 W/cm 2 ) with varying pulse widths (continuous operation to 16 ns). Second, the third harmonic of a pulsed Nd:YAG laser provided high irradiances (∼10 4 –10 6 W/cm 2 ) at a fixed nominal pulse width of 5 ns. Finally, a continuous polychromatic synchrotron X-ray source was also used to excite the ZnO:Zn powders. During UV LED excitation, a low number of carriers are created in the material, leading to an anticipated linear relationship between luminescence and irradiance. This held true for defect luminescence; however, there was an observed enhancement of exciton emission relative to the UV LED intensity as the pulse width was decreased, independent of irradiance. During UV laser excitation, the number of carriers was significantly increased, raising the material into a bimolecular recombination regime, which produced exciton emission much stronger than visible band emission. Finally, spectra obtained during synchrotron X-ray excitation, whose continuous illumination and higher penetration depth yielded higher emission from defect sites relative to exciton emission. A redshift in the exciton emission was also observed as excitation pulse width and sample temperature were varied, and is discussed.

Westphal, Eric Robert [Sandia National Lab. (SNL-N↗
DOE OSTI2022

Energy Storage for Manufacturing and Industrial Decarbonization (Energy StorM)

This report summarizes the needs, challenges, and opportunities associated with carbon-free energy and energy storage for manufacturing and industrial decarbonization. Energy needs and challenges for different manufacturing and industrial sectors (e.g., cement/steel production, chemicals, materials synthesis) are identified. Key issues for industry include the need for large, continuous on-site capacity (tens to hundreds of megawatts), compatibility with existing infrastructure, cost, and safety. Energy storage technologies that can potentially address these needs, which include electrochemical, thermal, and chemical energy storage, are presented along with key challenges, gaps, and integration issues. Analysis tools to value energy storage technologies in the context of manufacturing and industrial decarbonizations are also presented. Material is drawn from the Energy Storage for Manufacturing and Industrial Decarbonization (Energy StorM) Workshop, held February 8 - 9, 2022. The objective was to identify research opportunities and needs for the U.S. Department of Energy as part of its Energy Storage Grand Challenge program.

25 ENERGY STORAGE↗
DOE OSTI2026

Cybersecurity at the Grid Edge: Protecting LA's Energy Systems in a Connected World

Join SoCalGas and the National Laboratory of the Rockies (NLR) for an insightful webinar on securing operational technology and energy systems. Los Angeles has the second-largest metro by population in the nation, making it vital to protect the energy infrastructure that powers day-to-day life. However, cybersecurity for energy systems is an immense challenge due to an increasing number of interconnected devices and stakeholders. While there was traditionally a limited need to secure energy infrastructure, the grid is only becoming smarter and more software-defined. Amid aging infrastructure and evolving cyber threats, the need to ensure the security of energy is at an all-time high. Together, SoCalGas and NLR are assessing the current state-of-the-art of the energy ecosystem to understand gaps in current best practices and technologies relevant to powering the city of Los Angeles.

97 MATHEMATICS AND COMPUTING↗
DOE OSTI2022

A New Search for Low-mass Dark Matter and an Examination and Reduction of the Uncertainty due to the Photoelectric Absorption Cross Section using a Cryogenic Silicon Detector with Single-charge Sensitivity

Many astrophysical observations point to the abundant existence of dark matter (DM) in the universe composed of particles beyond the Standard Model. However despite numerous experiments using different techniques, DM particles have yet to be directly observed. The Super Cryogenic Dark Matter Search (SuperCDMS) SNOLAB experiment will employ silicon and germanium crystal detectors operated at temperatures as low as 15~mK to probe DM interactions using phonon and ionization signals. Recently, R\&D; facilities have developed gram-sized high-voltage eV-scale (HVeV) silicon detectors that achieve single-electron-hole-pair resolution. By probing effective DM-electron interactions, these devices can be used for searches of low-mass DM candidates.This dissertation presents a DM search experiment known as HVeV Run~2 that employs a second-generation HVeV detector operated in an above-ground laboratory at Northwestern University (IL, USA). Energy spectra are obtained from a blind analysis with 0.39 and 1.2\,g-days of exposure with the detector biased at 60 and 100\,V, respectively. The 0.93~gram detector achieves a 3\,eV phonon energy resolution, corresponding to a world-leading charge resolution of 3\,\% of a single electron-hole pair for a detector bias of 100\,V. With charge carrier trapping and impact ionization effects incorporated into the DM signal models, the resulting exclusion limits are reported for inelastic DM-electron scattering for DM masses from 0.5--$10^{4}$\,MeV$/c^{2}$; in the mass range from 1.2--50\,eV$/c^{2}$ the limits for dark photon and axion-like particle absorption are reported.Several DM search experiments, including HVeV Run~2, are sensitive to low-mass DM candidates that rely on the temperature-dependent photoelectric absorption cross section of silicon. However discrepancies in the underlying literature data result in dominating systematic uncertainties on the DM exclusion limits. In order to reduce these systematic uncertainties, this dissertation presents a novel method of making a direct, low-temperature measurement of the photoelectric absorption cross section of silicon at energies near the band gap (1.2--2.8\,eV).

Wilson, Matthew James↗
DOE OSTI2022

Coalescence of GaP on V-Groove Si

In recent years, better understanding and control over the formation of crystalline defects during the direct epitaxy of III-V semiconductors on Si substrates via metal organic vapor phase epitaxy (MOVPE) has enabled large gains in III-V-on-Si solar cell efficiency, pointing to pathway to lower-cost, high-performance III-V solar cells. However, such results have only been achieved on costly chemo-mechanically-polished (CMP) Si wafers. The use of V-groove nanopatterned Si substrates has demonstrated similarly high-crystalline-quality III-V-on-Si epitaxy, but also can be combined with lower-cost polishing techniques. Although they offer a potential cost advantage, growth on V-groove substrates adds challenges not present for epitaxy on planar wafers (the III-V material must be coalesced into a thin film after an initial nucleation stage). MOVPE growth conditions that promote highly facet-selective lateral growth needed for coalescence are generally actively avoided for conventional thin fim growth, so growth conditions need to be re-developed for V-groove-based epitaxy. Additionally, coalescence add complexity to the dislocation dynamics related to lattice relaxation, so strategies used to keep threading dislocation density (TDD) low on planar substrates need to be re-tuned for V-grooves. We have studied the morphological evolution and dislocation dynamics of GaP grown on V-groove Si by MOVPE. Growth conditions of V/III=5,000 and Tg=800 degrees C were uniquely found to produce extremely smooth coalesced thin films, with an RMS roughness of 0.2 nm measured by AFM. Additionally, at this growth condition, we identified two regimes of growth determined by the width of the SiNx cap (a remnant of the nanopatterning process) at the top of the V-grooves. For narrow caps, the GaP coalesces into a thin film, and for wide caps, the GaP evolves into {1 1 1}-faceted diamonds that do not coalesce. We suggest the influence of Si from the sidewalls of the V-grooves on the surface reconstruction of the GaP as the mechanism for this effect, with reflection difference spectroscopy (RDS) and Si doping experiments supporting this theory. In addition to morphology, the dislocation dynamics of the system were studied with electron channeling contrast imaging (ECCI) and transmission electron microscopy (TEM). The TDD of the coalesced GaP films was found to be 5 x 10^7 cm^-2 after coalescence via ECCI, a level still too high for high-quality solar cells. However, misfit dislocations crossing multiple grooves greater than 20 micrometers long were observed in ECCI, suggesting that the V-grooves do not block dislocation glide. TEM prior to and after coalescence was used to distinguish between dislocation creation driven by growth conditions and coalescence. Finally, strategies to reduce the dislocation density to levels acceptable for solar cells will be discussed.

GaP↗