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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 487 records · Page 27
All sourcesNASA NTRSDOE OSTI
DOE OSTI2018

Viscoelastic optical nonlocality of low-loss epsilon-near-zero nanofilms

Optical nonlocalities are elusive and hardly observable in traditional plasmonic materials like noble and alkali metals. Here we report experimental observation of viscoelastic nonlocalities in the infrared optical response of epsilon-near-zero nanofilms made of low-loss doped cadmium-oxide. The nonlocality is detectable thanks to the low damping rate of conduction electrons and the virtual absence of interband transitions at infrared wavelengths. We describe the motion of conduction electrons using a hydrodynamic model for a viscoelastic fluid, and find excellent agreement with experimental results. The electrons’ elasticity blue-shifts the infrared plasmonic resonance associated with the main epsilon-near-zero mode, and triggers the onset of higher-order resonances due to the excitation of electron-pressure modes above the bulk plasma frequency. We also provide evidence of the existence of nonlocal damping, i.e., viscosity, in the motion of optically-excited conduction electrons using a combination of spectroscopic ellipsometry data and predictions based on the viscoelastic hydrodynamic model.

42 ENGINEERING↗
DOE OSTI2018

Semiconductor Hyperbolic Metamaterials at the Quantum Limit

We study semiconductor hyperbolic metamaterials (SHMs) at the quantum limit experimentally using spectroscopic ellipsometry as well as theoretically using a new microscopic theory. The theory is a combination of microscopic density matrix approach for the material response and Green’s function approach for the propagating electric field. Our approach predicts absorptivity of the full multilayer system and for the first time allows the prediction of in-plane and out-of-plane dielectric functions for every individual layer constructing the SHM as well as effective dielectric functions that can be used to describe a homogenized SHM.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Vertical and lateral morphology effects on solar cell performance for a thiophene–quinoxaline copolymer:PC 70 BM blend

The distribution of electron donor and acceptor in the active layer is known to strongly influence the electrical performance of polymer solar cells for most of the high performance polymer:fullerene systems. The formulation of the solution from which the active layer is spincoated plays an important role in the quest for morphology control. We have studied how the choice of solvent and the use of small amounts of a low vapour pressure additive in the coating solution influence the film morphology and the solar cell performance for blends of poly[2,3-bis-(3-octyloxyphenyl)quinoxaline-5,8-diyl-alt-thiophene-2,5-diyl] (TQ1) and [6,6]-phenyl C 71 -butyric acid methyl ester (PC 70 BM). We have investigated the lateral morphology using atomic force microscopy (AFM) and scanning transmission X-ray microscopy (STXM), the vertical morphology using dynamic secondary ion mass spectrometry (d-SIMS) and variable-angle spectroscopic ellipsometry (VASE), and the surface composition using near-edge X-ray absorption fine structure (NEXAFS). The lateral phase-separated domains observed in films spincoated from single solvents, increase in size with increasing solvent vapour pressure and decreasing PC 70 BM solubility, but are not observed when 1-chloronaphthalene (CN) is added. A strongly TQ1-enriched surface layer is formed in all TQ1:PC 70 BM blend films and rationalized by surface energy differences. The photocurrent and power conversion efficiency strongly increased upon the addition of CN, while the leakage current decreased by one to two orders of magnitude. The higher photocurrent correlates with the finer lateral structure and stronger TQ1-enrichment at the interface with the electron-collecting electrode. This indicates that the charge transport and collection are not hindered by this polymer-enriched surface layer. Neither the open-circuit voltage nor the series resistance of the devices are sensitive to the differences in morphology.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Substrate temperature controls molecular orientation in two-component vapor-deposited glasses

Vapor-deposited glasses can be anisotropic and molecular orientation is important for organic electronics applications. In organic light emitting diodes (OLEDs), for example, the orientation of dye molecules in two-component emitting layers significantly influences emission efficiency. Here we investigate how substrate temperature during vapor deposition influences the orientation of dye molecules in a model two-component system. We determine the average orientation of a linear blue light emitter 1,4-di-[4-( N,N -diphenyl)amino]styrylbenzene (DSA-Ph) in mixtures with aluminum-tris(8-hydroxyquinoline) (Alq 3 ) by spectroscopic ellipsometry and IR dichroism. We find that molecular orientation is controlled by the ratio of the substrate temperature during deposition and the glass transition temperature of the mixture. Furthermore, these findings extend recent results for single component vapor-deposited glasses and suggest that, during vapor deposition, surface mobility allows partial equilibration towards orientations preferred at the free surface of the equilibrium liquid.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Effects of alloying on the optical properties of organic–inorganic lead halide perovskite thin films

Complex refractive index and dielectric function spectra of organic-inorganic lead halide perovskite alloy thin films are presented, together with the critical-point parameter analysis (energy and broadening) of the respective composition. Thin films of methylammonium lead halide alloys (MAPbI3, MAPbBr3, MAPbBr2I, and MAPbBrI2), formamidinium lead halide alloys (FAPbI3, FAPbBr3, and FAPbBr2I), and formamidinium cesium lead halide alloys [FA0.85Cs0.15PbI3, FA0.85Cs0.15PbBrI2, and FA0.85Cs0.15Pb(Br0.4I0.6)3] were studied. The complex refractive index and dielectric functions were determined by spectroscopic ellipsometry (SE) in the photon energy range of 0.7-6.5 eV. Critical point energies and optical transitions were obtained by lineshape fitting to the second-derivative of the complex dielectric function data of these thin films as a function of alloy composition. Absorption onset in the vicinity of the bandgap, as well as critical point energies and optical band transition shift toward higher energies as the concentration of Br in the films increases. Cation alloying (Cs+) has less effect on the optical properties of the thin films compared to halide mixed alloys. The reported optical properties can help to understand the fundamental properties of the perovskite materials and also be used for optimizing or designing new devices.

14 SOLAR ENERGY↗
DOE OSTI2026

Expanding the Zinc Precursor Toolbox: A Comparative Study of Precursors for Thermal ALD of ZnO Thin Films

Atomic layer deposition (ALD) of zinc oxide (ZnO) has been widely researched using diethyl zinc (DEZ)-based methods. The significant importance of thin films of ZnO as transparent conductive oxides (TCO) in optoelectronic devices and photovoltaics warrants examining alternative Zn precursors for ZnO ALD as potential replacements for the pyrophoric DEZ. In this study, we investigated three alternative Zn precursors: Zn(EEKI)2, Zn(DMP)2, ZnEt(HMDS), in the process development for high-quality ZnO thin films and compared them to DEZ. The ALD processes were studied using in situ spectroscopic ellipsometry. The properties of the ALD ZnO films were characterized using ex situ X-ray photoelectron spectroscopy (XPS), Rutherford backscattering spectrometry and nuclear reaction analysis (RBS/NRA), X-ray diffraction (XRD), atomic force microscopy (AFM), transmission electron microscopy (TEM), and ultraviolet-visible (UV/Vis) spectrophotometry. These measurements confirmed the formation of pure, stoichiometric, and polycrystalline ZnO films using all four Zn precursors. Although the selected precursors are chemically diverse Zn compounds, they all yielded saturating ALD processes and high-quality ZnO thin films at 200 °C. This study highlights the potential benefits of alternative zinc precursors in designing ALD processes for ZnO thin films.

Obenlüneschloß, Jorit↗
DOE OSTI2025

Layer-by-layer growth of graphene oxide multilayers using robust interlayer linking chemistry. 1. Zr-bisphosphates

Graphene oxide (GO) holds substantial interest because of its utility in applications ranging from chemical sensing to catalysis and energy storage. We report on the layer-by-layer formation of graphene oxide phosphate (P-GO) multilayers on silica and oxidized silicon supports, with the layers connected via Zr-bisphosphate (ZP) linking chemistry. Layers were grown either directly by ZP linkages between P-GO sheets, or with the use of 1,4-phenylene bisphosphate (BP1) or [1,1′-biphenyl]4,4′-diyl bisphosphate (BP2). The layers have been characterized using optical null ellipsometry, X-ray photoelectron spectroscopy (XPS), UV-visible absorption spectroscopy and scanning electron microscopy (SEM). There is a linear dependence of assembly thickness on the number of layers deposited and the integrated area of the optical absorbance bands also increases linearly with number of layers deposited. XPS data provides information on interlayer linking stoichiometry. SEM images provide insight into the morphology of the adlayers, suggesting the structure and length of the interlayer linking moieties used in the multilayer assembly play a significant role in the organization of the resulting system.

Mukherjee, Neelanjana [Michigan State University, ↗
DOE OSTI2025

Layer-by-layer growth of graphene oxide multilayers using robust interlayer linking chemistry. 2 Zr–bissulfates

We report on the facile layer-by-layer growth of graphene oxide sulfate (GO-S) multilayer structures. The layers are bonded to a modified planar silica support using Zr 4+ ions. Optical ellipsometry shows step-by-step layer growth with layer thickness consistent with that expected from molecular mechanics calculations. The reaction to form Zr–bissulfate linkages is facile, with multistep layer deposition occurring within six to ten minutes per layer. The GO-S layers can be deposited directly on GO-S underlayer(s) or interlayer spacers can be incorporated to control the spacing with GO-S layers. X-ray photoelectron spectroscopy (XPS) data provides information on the density of the sulfonated groups present at the graphene oxide surface and on the Zr : S ratio. This is the first report we are aware of that demonstrates robust layer-by-layer growth of graphene oxide structures.

Graphene oxide↗
DOE OSTI2013

Influence of film thickness and air exposure on the transport gap of manganese phthalocyanine

The interface formation between manganese phthalocyanine (MnPc) and cobalt was investigated combining ultraviolet photoelectron spectroscopy and inverse photoelectron spectroscopy. The transport band gap of the MnPc increases with the film thickness up to a value of (1.2 {+-} 0.3) eV while the optical band gap as determined from spectroscopic ellipsometry amounts to 0.5 eV. The gap values are smaller compared to other phthalocyanines due to metallic Mn 3d states close to the Fermi level. The transport band gap was found to open upon air exposure as a result of the disappearance of the occupied 3d electronic states.

36 MATERIALS SCIENCE↗
DOE OSTI2013

Anisotropy of effective electron masses in highly doped nonpolar GaN

The anisotropic effective electron masses in wurtzite GaN are determined by generalized infrared spectroscopic ellipsometry. Nonpolar (112{sup ¯}0) oriented thin films allow accessing both effective masses, m{sub ⊥}{sup *} and m{sub ∥}{sup *}, by determining the screened plasma frequencies. A n-type doping range up to 1.7 × 10{sup 20} cm{sup −3} is investigated. The effective mass ratio m{sub ⊥}{sup *}/m{sub ∥}{sup *} is obtained with highest accuracy and is found to be 1.11 independent on electron concentration up to 1.2 × 10{sup 20} cm{sup −3}. For higher electron concentrations, the conduction band non-parabolicity is mirrored in changes. Absolute values for effective electron masses depend on additional input of carrier concentrations determined by Hall effect measurements. We obtain m{sub ⊥}{sup *}=(0.239±0.004)m{sub 0} and m{sub ∥}{sup *}=(0.216±0.003)m{sub 0} for the parabolic range of the GaN conduction band. Our data are indication of a parabolic GaN conduction band up to an energy of approximately 400 meV above the conduction band minimum.

36 MATERIALS SCIENCE↗
DOE OSTI2013

Optical and carrier transport properties of graphene oxide based crystalline-Si/organic Schottky junction solar cells

We investigated the graphene oxide (GO) based n-type crystalline silicon (c-Si)/conductive poly(ethylene dioxythiophene):poly(styrenesulfonate)(PEDOT:PSS) Schottky junction devices with optical characterization and carrier transport measurement techniques. The optical transmittance in the UV region decreased markedly for the films with increasing the concentration of GO whereas it increased markedly in the visible-infrared regions. Spectroscopic ellipsometry revealed that the ordinary and extraordinary index of refraction increased with increasing the concentration of GO. The hole mobility also increased from 1.14 for pristine film to 1.85 cm{sup 2}/V s for the 12–15 wt. % GO modified film with no significant increases of carrier concentration. The highest conductivity was found for a 15 wt. % GO modified PEDOT:PSS film: the c-Si/PEDOT:PSS:GO device using this sample exhibited a relatively high power conversion efficiency of 11.04%. In addition, the insertion of a 2–3 nm-thick GO thin layer at the c-Si/PEDOT:PSS interface suppressed the carrier recombination efficiency of dark electron and photo-generated hole at the anode, resulting in the increased photovoltaic performance. This study indicates that the GO can be good candidates for hole transporting layer of c-Si/PEDOT:PSS Schottky junction solar cell.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Tailoring the index of refraction of nanocrystalline hafnium oxide thin films

Hafnium oxide (HfO{sub 2}) films were grown by sputter-deposition by varying the growth temperature (T{sub s} = 25–700 °C). HfO{sub 2} films grown at T{sub s} < 200 °C were amorphous, while those grown at T{sub s} ≥ 200 °C were monoclinic, nanocrystalline with (1{sup ¯}11) texturing. X-ray reflectivity (XRR) analyses indicate that the film-density (ρ) increases with increasing T{sub s}. The index of refraction (n) profiles derived from spectroscopic ellipsometry analyses follow the Cauchy dispersion relation. Lorentz-Lorenz analysis (n{sub (λ)} = 550 nm) and optical-model adopted agree well with the XRR data/analyses. A direct T{sub s}-ρ-n relationship suggests that tailoring the optical quality is possible by tuning T{sub s} and the microstructure of HfO{sub 2} films.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2015

Solution processed lanthanum aluminate gate dielectrics for use in metal oxide-based thin film transistors

We report on ZnO-based thin-film transistors (TFTs) employing lanthanum aluminate gate dielectrics (La{sub x}Al{sub 1−x}O{sub y}) grown by spray pyrolysis in ambient atmosphere at 440 °C. The structural, electronic, optical, morphological, and electrical properties of the La{sub x}Al{sub 1−x}O{sub y} films and devices as a function of the lanthanum to aluminium atomic ratio were investigated using a wide range of characterization techniques such as UV-visible absorption spectroscopy, impedance spectroscopy, spectroscopic ellipsometry, atomic force microscopy, x-ray diffraction, and field-effect measurements. As-deposited LaAlO{sub y} dielectrics exhibit a wide band gap (∼6.18 eV), high dielectric constant (k ∼ 16), low roughness (∼1.9 nm), and very low leakage currents (<3 nA/cm{sup 2}). TFTs employing solution processed LaAlO{sub y} gate dielectrics and ZnO semiconducting channels exhibit excellent electron transport characteristics with hysteresis-free operation, low operation voltages (∼10 V), high on/off current modulation ratio of >10{sup 6}, subthreshold swing of ∼650 mV dec{sup −1}, and electron mobility of ∼12 cm{sup 2} V{sup −1} s{sup −1}.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2015

Structural and optical properties of cobalt slanted nanopillars conformally coated with few-layer graphene

Optical characterization of anisotropic multicomponent nanostructures is generally not a trivial task, since the relation between a material's structural properties and its permittivity tensor is nonlinear. In this regard, an array of slanted cobalt nanopillars that are conformally coated with few-layer graphene is a particularly challenging object for optical characterization, as it has a complex anisotropic geometry and comprises several materials with different topologies and filling fractions. Normally, a detailed characterization of such complex nanostructures would require a combination of several microscopic and spectroscopic techniques. In this letter, we demonstrate that the important structural parameters of these graphene-coated sculptured thin films can be determined using a fast and simple generalized spectroscopic ellipsometry test combined with an anisotropic Bruggeman effective medium approximation. The graphene coverage as well as structural parameters of nanostructured thin films agree excellently with electron microscopy and Raman spectroscopy observations. The demonstrated optical approach may also be applied to the characterization of other nanostructured materials.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Plasmon resonance and perfect light absorption in subwavelength trench arrays etched in gallium-doped zinc oxide film

Near-perfect light absorption in subwavelength trench arrays etched in highly conductive gallium-doped zinc oxide films was experimentally observed in the mid infrared regime. At wavelengths corresponding to the resonant excitation of surface plasmons, up to 99% of impinging light is efficiently trapped and absorbed in the periodic trenches. Scattering cross sectional calculations reveal that each individual trench acts like a vertical split ring resonator with a broad plasmon resonance spectrum. The coupling of these individual plasmon resonators in the grating structure leads to enhanced photon absorption and significant resonant spectral linewidth narrowing. Ellipsometry measurements taken before and after device fabrication result in different permittivity values for the doped zinc oxide material, indicating that localized annealing occurred during the plasma etching process due to surface heating. Simulations, which incorporate a 50 nm annealed region at the zinc oxide surface, are in a good agreement with the experimental results.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

High performance mid-temperature selective absorber based on titanium oxides cermet deposited by direct current reactive sputtering of a single titanium target

This paper reports the design and fabrication of a new double cermet-based low-mid temperature solar selective absorber based on TiO x cermet layers, which were deposited with a single Ti target by varying O 2 partial pressure in sputtering chamber as reactive gas. High metal volume fraction cermet 1 and low metal volume fraction cermet 2 were deposited with O 2 partial pressure of 0.15 mTorr and 0.25 mTorr, respectively, with direct current power density of 6.58 W cm -2 . The complex refractive indices from ellipsometry were used to design solar selective absorber. The reflectance, thermal stability, and morphology were studied in absorbers on Cu and stainless steel. The effect of TiO 2 and SiO 2 as anti-reflective coating layers was investigated. Finally, the absorber on Cu substrate has high absorptance of 90.8% and low emittance of 4.9% (100 °C), and changed to 96.0% and 6.6%, respectively, after annealing at 300 °C for 4 days.

42 ENGINEERING↗
DOE OSTI2016

Interface effects in nanometer-thick yttrium iron garnet films studied by magneto-optical spectroscopy

The properties of nanometer-thick yttrium iron garnet (YIG) films are strongly influenced by interfaces. This work employs spectral ellipsometry (SE) and magneto-optic polar Kerr rotation (PKR) to characterize YIG films with thickness, t, from 6 nm to 30 nm grown on Gd 3 Ga 5 O 12 (GGG) substrates oriented parallel to (111) plane. The films display a surface roughness of 0.35 nm or lower. The analysis of the SE data at the photon energies of 1 eV < E < 6.5 eV provided the t and permittivity values. The PKR at 1.3 eV < E < 4.5 eV is reasonably explained with the optical model for the YIG film/GGG substrate system. Even better agreement is achieved by assuming a 1.07-nm-thick layer sandwiched between YIG and GGG that has Fe 3+ sublattice magnetization opposite to that in the YIG volume. This suggests the existence of antiferromagnetic coupling between the Gd 3+ and tetrahedral Fe 3+ .

36 MATERIALS SCIENCE↗