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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 487 records · Page 27
All sourcesNASA NTRSDOE OSTI
DOE OSTI2012

Validating classical line profile analyses using microbeam diffraction from individual dislocation cell walls and cell interiors

Dislocation structures in deformed metals produce broad asymmetric diffraction line profiles. During analysis, these profiles are generally separated into two nearly symmetric subprofiles corresponding to diffraction by dislocation cell walls and cell interiors. These subprofiles are then interpreted using complex models of dislocation-based line broadening. Until now, it has not been possible to test the many assumptions that are made in such an analysis. Here, depth-resolved microbeam diffraction was used to measure diffraction line profiles from numerous individual dislocation cell walls and cell interiors in a heavily deformed Cu single crystal. Summing these profiles directly constructed the cell-interior and cell-wall subprofiles that have been approximated in the line profile analysis literature for the past 30 years. Direct comparison between the reconstructed subprofiles and the macroscopic asymmetric line profile from the same sample allows the first direct tests of many of the assumptions that have been used for interpreting these X-ray measurements.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Impact of irradiation induced dislocation loops on thermal conductivity in ceramics

Experimental work aimed at understanding the role of dislocation loops in limiting phonon mediated thermal transport in ceramics is presented. Faulted dislocation loops, having diameters of a few nanometers, were introduced by irradiating a polycrystalline cerium dioxide sample with 1.6 MeV protons at 700°C. XRD analysis indicated that irradiated samples retained their crystalline structure and exhibit very little lattice expansion suggesting a low concentration of point defects. Additionally, further microstructure characterization using transmission electron microscopy revealed that interstitial type faulted dislocation loops were primarily created as expected for these irradiation conditions. Thermal conductivity of the damaged layer was measured using a modulated thermoreflectance approach. Analysis of the experimental data using the classical Klemens-Callaway approach reveals that the conductivity reduction is primarily due to dislocation loops, while point defects and voids play only a minor role. These results provide experimental confirmation that faulted loops offer a unique arrangement for displaced atoms that leads to an unusually large reduction of thermal conductivity.

36 MATERIALS SCIENCE↗
DOE OSTI2012

Determination of the types and densities of dislocations in GaN epitaxial layers of different thicknesses by optical and atomic force microscopy

The change in the dislocation density on the surface of GaN epitaxial layers, which were grown by hydride vapor-phase epitaxy on sapphire substrates with c and r orientations, has been investigated by optical and atomic force microscopy (AFM). It is shown that the observed decrease in the density of threading dislocations with an increase in the layer thickness is related to the annihilation of mixed dislocations. The experimental and theoretical data on the change in the density of mixed dislocations with an increase in the epitaxial-layer thickness are in good correspondence.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2013

Influence of metal impurities on recombination activity of dislocations in multicrystalline silicon

The influence of Fe, Cu, and Ni atoms introduced by means of high-temperature diffusion on the recombination properties of dislocations in multicrystalline silicon is investigated by the electron-beam induced-current (EBIC) method. It is shown that the influence of all three impurities is qualitatively similar. Recombination activity of dislocations remains lower than the detection limit in the EBIC mode both for starting samples and after the diffusion of transition metals. The behavior of dislocations is interpreted under the assumption that dislocations are already impurity-saturated in starting samples.

36 MATERIALS SCIENCE↗
DOE OSTI2015

On the luminescence of freshly introduced a-screw dislocations in low-resistance GaN

Using scanning electron microscopy in the cathodoluminescence mode, it is shown that straight segments of a-screw dislocations introduced by plastic deformation at room temperature into unintentionally doped low-resistance gallium nitride luminesce in the spectral range 3.1–3.2 eV at 70 K. The spectral composition of dislocation luminescence shows a fine doublet structure with a component width of ∼15 meV and splitting of ∼30 meV, accompanied by LO-phonon replicas. Luminescent screw dislocations move upon exposure to an electron beam and at low temperatures, but retain immobility for a long time without external excitation. Optical transitions involving the quantum-well states of a stacking fault in a split-dislocation core are considered to be the most probable mechanism of the observed phenomenon.

36 MATERIALS SCIENCE↗
DOE OSTI2017

Atomic configuration and charge state of hydrogen at dislocations in silicon

The effect of the introduction of hydrogen upon the vibration spectra and electrical characteristics of samples with dislocation networks at the interface of bonded silicon wafers was studied. In order to improve the sensitivity of measurements and to distinguish the signal from dislocation networks in Raman spectra, thin foils conventionally prepared for transmission electron microscopy were used as the sample under investigation. In the samples with dislocation networks, a Raman peak at 2000 cm{sup –1} was observed. This peak survived after annealing at a temperature of T = 500°C and was not observed in reference samples. Comparison of the experimental data with currently available theoretical calculations allowed one to attribute the observed peak to neutral hydrogen atoms H{sup 0} at the center of Si–Si bonds. The peak is metastable in the ideal lattice, but becomes stable in the vicinity of dislocations.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Effect of Boron Impurity on the Light-Emitting Properties of Dislocation Structures Formed in Silicon by Si{sup +} Ion Implantation

The effect of boron implantation on the light-emitting properties of dislocation structures formed in silicon by Si{sup +} ion implantation with subsequent annealing is studied. It is shown that the implantation of B{sup +} ions has a significant effect on the dislocation-related luminescence intensity, spectrum and the temperature dependence of the D1-band intensity. It is found that the temperature dependence is nonmonotonous and involves two regions, in which the D1-band intensity increases with increasing temperature and has two well-pronounced maxima at 20 K and 60–70 K. The maximum at 20 K is associated with the morphological features of the dislocation structure under study, whereas the maximum at 60–70 K is associated with the additional implantation of the boron impurity into the dislocation region of the samples. It is established that the intensities of the experimentally observed maxima and the position of the high-temperature maximum depend on the implanted boron concentration.

36 MATERIALS SCIENCE↗
DOE OSTI2017

Peculiarities of dislocation motion in aluminum with allowance for the Peierls relief in the presence of ultrasound

The effect of ultrasound on motion of the Frenkel–Kontorova dislocations in aluminum has been studied with inclusion of the Peierls relief. A dislocation moves at a variable rate when overcoming the Peierls barrier. The dislocation mean free path is changed under action of ultrasound at various frequencies comparable to the dislocation transition time to a neighboring valley. The stress–strain dependences have been obtained for high and low strain rates. In both the cases, a disordering takes place; however, the disordering rates and characters are different. At the resonance frequency, the strain resistance decreases, the hardening stage is shortened and the disordering stage is elongated. The dependence of the coefficient of hardening on coordinate has three segments different in characters. The coefficient of hardening decreases at the resonance frequency.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

Length scales and scale-free dynamics of dislocations in dense solid solutions

The fundamental interactions between an edge dislocation and a random solid solution are studied by analyzing dislocation line roughness profiles obtained from molecular dynamics simulations of Fe 0.70 Ni 0.11 Cr 0.19 over a range of stresses and temperatures. These roughness profiles reveal the hallmark features of a depinning transition. Namely, below a temperature-dependent critical stress, the dislocation line exhibits roughness in two different length scale regimes which are divided by a so-called correlation length. This correlation length increases with applied stress and at the critical stress (depinning transition or yield stress) formally goes to infinity. Above the critical stress, the line roughness profile converges to that of a random noise field. Motivated by these results, a physical model is developed based on the notion of coherent line bowing over all length scales below the correlation length. Above the correlation length, the solute field prohibits such coherent line bow outs. Using this model, we identify potential gaps in existing theories of solid solution strengthening and show that recent observations of length-dependent dislocation mobilities can be rationalized.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Effects of rhodium doping on dislocation nucleation in a [001] SrNi 2 P 2 single crystal under spherical nanoindentation

Nanoindentation was performed on SrNi 2 P 2 single crystals and their dilute solid solutions, Sr(Ni 1–x Rh x ) 2 P 2 (x = 0 ~ 0.055), under [001] loading to investigate the effects of elemental doping on Young’s modulus and dislocation nucleation stress. The results show that Young’s modulus and the dislocation nucleation stress decrease as the Rh content increases, and their Rh content dependence also varies with the Rh content. Electron diffraction analysis and the anisotropic lattice distortion calculations revealed that a local structural transition from the orthorhombic superstructure to the tetragonal structure and local compressive residual stresses could be the main reasons for the decrease in Young’s modulus and dislocation nucleation stress, respectively. The overlap of stress–strain fields between Rh atoms and the associated local structural transition contribute to their Rh content dependence. Here, the results also indicate that elemental doping does not necessarily strengthen materials if the incipient plasticity is controlled by dislocation nucleation, unlike conventional solid solution strengthening.

36 MATERIALS SCIENCE↗
DOE OSTI2011

ParaDiS-FEM dislocation dynamics simulation code primer

The ParaDiS code is developed to study bulk systems with periodic boundary conditions. When we try to perform discrete dislocation dynamics simulations for finite systems such as thin films or cylinders, the ParaDiS code must be extended. First, dislocations need to be contained inside the finite simulation box; Second, dislocations inside the finite box experience image stresses due to the free surfaces. We have developed in-house FEM subroutines to couple with the ParaDiS code to deal with free surface related issues in the dislocation dynamics simulations. This primer explains how the coupled code was developed, the main changes from the ParaDiS code, and the functions of the new FEM subroutines.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Neutron Diffraction Measurement of Residual Stresses, Dislocation Density and Texture in Zr-bonded U-10Mo ''Mini'' Fuel Foils and Plates

Aluminum clad monolithic uranium 10 weight percent molybdenum (U-10Mo) fuel plates are being considered for conversion of several research and test nuclear reactors from high-enriched to low-enriched uranium fuel due to the inherently high density of fissile material. Comprehensive neutron diffraction measurements of the evolution of the textures, residual phase stresses, and dislocation densities in the individual phases of the mini-foils throughout several processing steps and following hot-isostatic pressing to the Al cladding, have been completed. Recovery and recrystallization of the bare U-10Mo fuel foil, as indicated by the dislocation density and texture, are observed depending on the state of the material prior to annealing and the duration and temperature of the annealing process. In general, the HIP procedure significantly reduces the dislocation density, but the final state of the clad plate, both texture and dislocation density, depends strongly on the final processing step of the fuel foil. In contrast, the residual stresses in the clad fuel plate do not depend strongly on the final processing step of the bare foil prior to HIP bonding. Rather, the residual stresses are dominated by the thermal expansion mismatch of the constituent materials of the fuel plate.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗
DOE OSTI2023

Data Driven Approach to Dislocation-Based Plasticity Models of Face-Centered Cubic Metals

Dislocation dynamics controls plastic deformation, mechanical strength, and failure of crystalline materials. It also governs fatigue resistance under cyclic loading, creep resistance at elevated-temperature, and radiation resistance for reactor applications. There is a compelling need for understanding fundamental dislocation mechanisms for deformation because virtually all structural metals used in energy systems are fabricated to desired forms and shapes by deformation processes. To date, the most outstanding problem in a physics-based multiscale model of crystal plasticity is the lack of quantitative connections between continuum plasticity (CP) models with the lower scale dislocation models. As a result, existing CP models used in engineering applications are still phenomenological, while evidence continues to mount that they can make inaccurate predictions under realistically complex scenarios. This project takes advantage of the recent advances in high-performance discrete dislocation dynamics (DDD) simulations and data science approaches to establish the first fully connected multiscale plasticity model for pure face-centered cubic (FCC) single crystals.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Strain Field Around Individual Dislocations Controls Failure

Understanding material failure on a fundamental level is a key aspect in the design of robust structural materials, especially for metals and alloys capable to undergo plastic deformation. In the last decade, significant progress is made in quantifying the stresses associated with failure in both experiments and simulations. Nonetheless, the processes occurring on the most essential level of individual dislocations that govern semi-brittle and ductile fracture are still experimentally not accessible, limiting the failure prediction capabilities. Therefore, in the present work, a one-of-a-kind nanoscale fracture experiment is conducted on a single crystalline Cr bending beam in situ in the transmission electron microscope and for the first time quantify the transient strains around individual dislocations, as well as of the whole dislocation network during crack opening. The results reveal the importance of both pre-existing and newly emitted dislocations for crack-tip shielding via their intrinsic strain field and provide guidelines to design more damage tolerant materials.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Boundary characterization using 3D mapping of geometrically necessary dislocations in AM Ta microstructure

Additive manufacturing (AM) of high strength metallic materials produces microstructures and defects that deviate substantially from those created through conventional manufacturing methods. It has recently been demonstrated that with application of extreme energy densities, a high-temperature refractory metal, tantalum (Ta), can be printed to a fully dense state with exceptionally low porosity. Here we employ a combination of three-dimensional electron backscattered diffraction (EBSD) TriBeam technology and crystallographic geometrically necessary dislocation (GND) theory to characterize the microstructure and defect boundaries of this unusual AM product. Two-dimensional (2D) EBSD and these three-dimensional (3D) measurements indicate that the microstructure of AM Ta is highly oriented <111> along the build direction, yet at the same time contains large crystallographic orientation gradients that span mm’s across the build. Crystallographic GND density analysis of the 3D microstructure reveals that highly misoriented subboundaries exist within this strongly textured microstructure that have large dislocation densities of 1×10 16 m –2 , just as large as those comprising the high-angle grain boundaries (HAGBs) in the same material. The 3D crystallographic GND density mapping reveals these subboundaries are part of a complex, finely spaced network that extends throughout the entire microstructure. Here, the orientation of these boundaries can be related to the scan strategy used during printing. TEM measurements corroborate an extremely high dislocation density at the microscale and indicate a cell-like dislocation network structure existing in the AM Ta at the sub-μm scale.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Role of Chemical Disorder in High Temperature Dislocation Glide in Refractory Multi-principal Element Alloys

Refractory multi-principal element alloys (RMPEAs) combine a chemically disordered lattice with a structurally ordered, single‐phase body‐centered cubic (bcc) crystal structure. Chemical fluctuations in these alloys give rise to significant energy barriers that impede dislocation motion. In this study, we use phase field dislocation dynamics to examine how spatial temperature fluctuations compete with randomness in energy barriers to affect the motion of long screw dislocations in three equi-atomic MoNbTa‐based RMPEAs: MoNbTa, MoNbTaW, and MoNbTaVW. Over a wide range of homologous temperatures (T h ≈ 0–0.6), we determined a screw dislocation ‘flow stress’ as the minimum applied stress to sustain continuous motion over a long excursion distance within a fixed timeframe. All three RMPEAs exhibit temperature dependent flow stress with three characteristic glide regimes: at low homologous temperatures, flow stress drops sharply, and screw glide remains planar and rectilinear; at intermediate homologous temperatures, the flow stress levels off as glide becomes planar but wavy; and at high homologous temperatures, flow stress plateaus as screws exhibit nonplanar, three‐dimensional motion. Glide kinetics and transition temperatures are controlled by the chemically induced fluctuations in the energy landscape. The rectilinear to wavy transition temperature is controlled by statistically weakest local barriers in the glide plane, whereas the wavy to 3D transition temperature is governed by statistically strongest local barriers. At low and intermediate homologous temperatures, the relative spread in energy barriers governs glide behavior by controlling the local kinetics of kink pair formation and kink pinning. At high homologous temperatures, the average barrier height governs the glide behavior by controlling the number of out-of-plane excursions during 3D glide. These findings reveal how random chemical fluctuations determine screw‐driven plasticity in RMPEAs, providing critical insight for the design of high temperature structural alloys.

Defects↗
DOE OSTI2015

The role of twinning deformation on the hardening response of polycrystalline magnesium from discrete dislocation dynamics simulations

The mechanical response of micro-twinned polycrystalline magnesium was studied through three-dimensional discrete dislocation dynamics (DDD). A systematic interaction model between dislocations and (1012) tension twin boundaries (TBs) was proposed and introduced into the DDD framework. In addition, a nominal grain boundary (GB) model agreeing with experimental results was also introduced to mimic the GB’s barrier effect. The current simulation results show that TBs act as a strong obstacle to gliding dislocations, which contributes significantly to the hardening behavior of magnesium. On the other hand, the deformation accommodated by twinning plays a softening role. Therefore, the concave shape of the Mg stress-strain curve results from the competition between dislocation-TB induced hardening and twinning deformation induced softening. At low strain levels, twinning deformation induced softening dominates and a decreasing hardening rate is observed in Stage-I. In Stage-II, both the hardening and softening effects decline, but twinning deformation induced softening declines faster, which leads to an increasing hardening rate.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Quantitative linkage between the stress at dislocation channel – Grain boundary interaction sites and irradiation assisted stress corrosion crack initiation

Localized deformation has emerged as a key factor in the crack initiation process for irradiated steels, as cracks are observed to nucleate preferentially at these sites. Using high resolution electron backscatter diffraction (HREBSD), the local stress tensor surrounding the dislocation channel-grain boundary interaction sites was quantified and coupled with fully determined grain boundary plane orientation information to determine, for the first time, the relationship between grain boundary normal stress and intergranular crack initiation in irradiated austenitic stainless steel. A Fe-13Cr-15Ni alloy was strained in simulated boiling water reactor, normal water chemistry after quantifying the residual stress tensor at discontinuous dislocation channel – grain boundary interaction sites where grain boundaries were determined to be well oriented with respect to the loading axis. Local stresses at the grain boundary were observed to reach magnitudes greater than 1.5 GPa at a distance of 200 nm from the intersection between the dislocation channel and the grain boundary. A pseudo-threshold stress of 0.9 GPa was measured, below which no cracking was observed. As the stress acting normal to the grain boundary increased above this value, the susceptibility to cracking increased with the cracking fraction reaching 100% at the high end of the stress range. This study shows for the first time that not only does intersection between discontinuous dislocation channels and grain boundaries result in peak local stresses, while the magnitude of the local tensile stress drives the crack initiation process.

36 MATERIALS SCIENCE↗