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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 487 records · Page 27
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

System and method for high power diode based additive manufacturing

The present disclosure relates to a system for performing an Additive Manufacturing (AM) fabrication process on a powdered material, deposited as a powder bed and forming a substrate. The system makes use of a laser for generating a laser beam, and an optical subsystem. The optical subsystem is configured to receive the laser beam and to generate an optical signal comprised of electromagnetic radiation sufficient to melt or sinter the powdered material. The optical subsystem uses a digitally controlled mask configured to pattern the optical signal as needed to melt select portions of a layer of the powdered material to form a layer of a 3D part. A power supply and at least one processor are also included for generating a plurality of different power density levels selectable based on a specific material composition, absorptivity and diameter of the powder particles, and a known thickness of the powder bed. The powdered material is used to form the 3D part in a sequential layer-by-layer process.

El-Dasher, Bassem S.↗
DOE OSTI2021

Designing Modules to Prevent Reverse Bias Degradation in Perovskite Solar Cells when Partial Shading Occurs

When a solar cell in a panel is shaded, the illuminated cells can place a large reverse bias on the shaded cell to attempt to force current through it. Although the panel can continue to produce power, the reverse bias can cause significant problems for the shaded cell. In the case of perovskite solar modules, Joule heating and irreversible electrochemical reactions will degrade the cell. Some photovoltaic technologies use bypass diodes to solve this problem. To prevent both a perovskite cell and an all-perovskite tandem cell from falling into reverse bias breakdown while shaded, no more than two cells per bypass diode are allowed, which is likely to be prohibitively expensive for many applications. Herein, how many solar cells can be protected by one bypass diode in single-junction and multijunction perovskite modules is explored. It is easier to incorporate bypass diodes into modules with singulated cells than with monolithic panels. It is shown that perovskite–silicon tandems can be protected with fewer bypass diodes than with single-junction perovskite modules. Furthermore, it is suggested that if bypass diodes cannot be feasibly incorporated, then the panels should be deployed in utility-scale power plants.

14 SOLAR ENERGY↗
DOE OSTI2021

Simulation and Modeling of Time-Resolved X-Ray Detector for the Saturn Accelerator

In this work, we present the technology-aided computer design (TCAD) device simulation and modeling of a silicon p-i-n diode for detecting time-dependent X-ray radiation. We show that the simulated forward and reverse breakdown current–voltage characteristics agree well with the measured data under nonradiation environment by only calibrating carrier lifetimes for the forward bias case and avalanche model critical fields for the reverse bias condition. Using the calibrated parameters and other nominal material properties, we simulated the radiation responses of the p-i-n diode and compared with experimental data when the diode was exposed to X-ray radiation at Sandia’s Saturn facility and the Idaho State University (ISU) TriMeV facility. For Saturn’s Gaussian dose-rate pulses, we show three findings from TCAD simulations. First, the simulated photocurrents are in excellent agreement with the measured data for two dose-rate pulses with peak values of 1.16×10 10 and 1.88×10 10 rad(Si)/s. Second, the simulation results of high dose-rate pulses predict increased delayed photocurrents with longer time tails in the diode electrical responses due to excess carrier generation. Third, simulated peak values of diode radiation responses versus peak dose rates at different bias conditions provide useful guidance to determine the dose-rate range that the p-i-n diode can reliably detect in experiment. For TriMeV’s non-Gaussian dose-rate pulse, our simulated diode response is in decent agreement with the measured data without further calibration. We also studied the effects of device geometry, recombination process, and dose-rate enhancement via TCAD simulations to understand the higher measured response in the time after the peak dose-rate radiation for the p-i-n diode exposed to TriMeV irradiation.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2020

Light source and method for making a light source

A light source fabrication process to fabricate a customized light source includes attaching a plurality of light emitting diodes to a circuit board, where each light emitting diode is configured to emit light within a same wavelength range. Further, the light source fabrication process includes applying a first phosphor layer to a first set of light emitting diodes of the plurality of light emitting diodes and applying a second phosphor layer to a second set of light emitting diodes of the plurality of light emitting diodes. The phosphor layers are applied to the light emitting diodes using one of a screen printing process and an inkjet printing process. The first phosphor layer is different from and has different optical properties from the second phosphor layer.

42 ENGINEERING↗
DOE OSTI2022

Dynamic-quenching of a single-photon avalanche photodetector using an adaptive resistive switch

One of the most common approaches for quenching single-photon avalanche diodes is to use a passive resistor in series with it. A drawback of this approach has been the limited recovery speed of the single-photon avalanche diodes. High resistance is needed to quench the avalanche, leading to slower recharging of the single-photon avalanche diodes depletion capacitor. We address this issue by replacing a fixed quenching resistor with a bias-dependent adaptive resistive switch. Reversible generation of metallic conduction enables switching between low and high resistance states under unipolar bias. As an example, using a Pt/Al 2 O 3 /Ag resistor with a commercial silicon single-photon avalanche diodes, we demonstrate avalanche pulse widths as small as ~30 ns, 10× smaller than a passively quenched approach, thus significantly improving the single-photon avalanche diodes frequency response. The experimental results are consistent with a model where the adaptive resistor dynamically changes its resistance during discharging and recharging the single-photon avalanche diodes.

42 ENGINEERING↗