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At least 487 records · Page 27

Global L-band Observatory for Water Cycle Studies (GLOWS)

L-band observations have proven useful for estimating soil moisture and ocean salinity variables to study the land surface and ocean. The European Space Agency (ESA) Soil Moisture and Ocean Salinity (SMOS) mission was the first (2009-present) spaceborne L-band radiometer. This was followed by two L-band missions flown by the National Aeronautics and Space Administration (NASA) to measure sea surface salinity (Aquarius 2011-2015) and soil moisture (SMAP 2015-present). It is critical to continue the time series of L-band observations that these missions have begun. To address this need we propose a new low-cost instrument concept known as the Global L-band active/passive Observatory for Water cycle Studies (GLOWS) that will include an L-band radiometer and radar to provide data continuity. The new mission concept includes a deployable reflectarray lens antenna with a compact feed that can be flown on an Earth Venture class satellite in a EELV Secondary Payload Adapter (ESPA) Grande-class mission. GLOWS will continue the science observations of SMAP and SMOS at the same resolution and accuracy at substantially lower cost, size, and weight.

David Long↗

Dual and Multi-Spectral Band SLS Infrared Camera Systems

Based on the recent success of our strained-layer superlattice (SLS)-based infrared (IR) camera that performed Earth imaging from the International Space Station (ISS) in 2019 we have built, what we consider, to be the next generation multi-band SLS imaging system. The Compact Thermal Imager (CTI) was installed on the Robotic Refueling Mission 3 (RRM3) and attached to the exterior of the ISS. From this location we were able to capture 15 million images of a multitude of fires around the globe in 2019. This unexpected trove of data initiated quite a bit of scientific interest to further utilize this imaging capability but would include features to more precisely monitor terrestrial fires and other surface phenomena. To this end, we developed a technique to install specific bandpass filters directly onto the SLS detector hybrid assembly. Utilizing this technique we have built a CTI-2 camera system with two filters, 4 and 11µm, and have made a second detector assembly with six filter bands from 4-12µm. This second system will also be used to supplement Landsat remote imaging monitoring approximate land surface temperatures, monitor evapotranspiration, sea ice and glacier dynamics. The CTI-2 camera is based on a 1,024x1,024 (1kx1k) format SLS detector hybridized to a FLIR ISC0404 readout integrated circuit (ROIC). The six band SLS focal plane array is based on the 640x512 FLIR ISC 9803 ROIC. This camera system is based on the Landsat 8 and 9 Thermal IR Sensors (TIRS) instrument and one of its purposes is to perform ground truthing for the Landsat 8/9 data at higher spectral resolution. Both Landsat TIRS instruments are dual band thermal IR sensors centered on 11 and 12µm (each with about a 1µm bandpass). Both of our SLS systems utilize a Ricor K548 cryocooler. To streamline costs and development time we used commercial optics and both commercial and custom NASA electronic components. A primary feature of these camera systems is the incorporation of specific filters to collect fire data at ~3.9µm and thermal data at ~11µm. The CTI-2 instrument is designed for 37 m /pixel spatial resolution from 410km orbit (ISS orbit). In this paper, we will present the design and performance of the focal plane, optics, electronics and mechanical structure of the dual‑band CTI-2 and the focal plane performance of the six‑band focal plane.

Murzy Jhabvala↗

The Dielectric Constant at P-Band for Salinity from 0 to 150 pss

Measurements have been made at P-band (0.707 GHz) to construct a model for the dielectric constant of sea water and extend the model for the dielectric constant to high salinity (50-150 pss). The measurements are part of research to develop a model for the dielectric constant suitable for future wide-bandwidth remote sensing of salinity and for application to water bodies such as the Great Salt Lake with salinity significantly above that found in the open ocean. Measurements have been made at temperatures from 2 to 30 °C and salinity from 0 to 138 pss. The data have been fit to a Debye model for the dielectric constant with a single resonance as has been employed at L-band (1.413 GHz) where remote sensing of salinity is currently done. Comparison with contemporary models developed from data at L-band indicates that the L-band model and new P-band model do well at both frequencies for salinity less than 50 pss but at higher values of salinity the L-band models diverge from the data. The data has also been used to test at high salinity the mathematical relationship between salinity and conductivity which is the basis for the practical salinity scale (pss).

Dielectric Constant↗

Preliminary Assessment of the Impact on the V-Band Oxygen Channels From Satellite Communication Uplinks

We calculate the percentage of time that an ATMS-like instrument [1] will be illuminated by the uplink beam of one of the proposed V-band communication system and estimate the damage resulting from such exposure. Using a combination of openly available information and educated guesses about the location and characteristics of the up/down link terminals, we constructed the ground segment of a hypothetical high-speed communication network. The space segment of the network was constructed from the orbital data of the existing Starlink constellation [2] of 6223 communication satellites (comsats) which is used as strawman to represent any other possible constellation of communication satellites. It is shown that without a very delicate balance of frequency allocations (science vs telecommunications), coupled with extremely steep and deep bandpass-defining filters, and strict adherence to the agreed limits (i.e. no out-of-band transmissions) the deployment of the telecommunication network leads to almost-complete loss of some important geophysical data. For the analysis we use the spectral characteristics of the ATMS instrument with the ephemeris for the NOAA-21 satellite [3]. The analysis is conducted for the USA and the simulation covers 8 consecutive days in July 2024. Effective and accurate microwave remote sensing of the atmosphere depends on the availability of interference-free spectrum windows at frequencies which are prescribed by physical processes [e.g. 4]. The family of resonant lines of the oxygen molecule near 60 GHz provides a unique opportunity to sample the vertical distribution of temperature and density from space, and it has been exploited for weather and climate studies from polar-orbiting satellites since 1978 (MSU on TIROS-N [5]). It remains a staple in the payloads operated by Russia, China, USA, Japan, France, India, UK, Ukraine [6] which are built around a common blueprint: a few wide-band (hundreds of MHz) channels around 50 GHz to sample the atmosphere and the surface while several more channels with high spectral resolution (few MHz) sample the individual resonant lines. Accurate retrieval of the environmental parameters depends upon the data provided by both sets of channels, and the their location in frequency space is not arbitrary and cannot be altered at will [7, 8]. The introduction of 5G technology in 2019 has driven telecommunication companies to request more bandwidth to be dedicated to their devices. This additional bandwidth is only available in spectral regions traditionally reserved for environmental and astrophysical research, such as the V-band between 50 and 60 GHz for up/downlink between satellites in low-earth orbits and terminals connected to fiberoptics network for distribution to high-speed local internet services. The power broadcast by the uplink communication leg is many orders of magnitude greater than the natural thermal signal emitted from the Earth scene. If the ground antenna were to perfectly align with the passive instrument’s antenna, the spaceborne receiver would suffer permanent, irreparable damage. While a direct boresight-to-boresight conjunction is extremely unlikely (even with a large constellation of satellites the fraction of the celestial sphere occupied by the satellites remains minuscule) the finite size of the ground station’s antenna beam in the sky suggests that the ATMS will be in the near background (as seen from the ground station) of one of the communication satellites and will be illuminated by either the main lobe or the near sidelobes of the uplink antenna more often than it is desirable. For our analysis we first calculate the position of the ATMS with respect to each of the ground stations at a resolution of 0.2 sec, then calculate the position of each of the comsats which are at least 25 deg above the station’s local horizon; finally we calculate the angle between the line-of-sight of the ATMS and the line-of-sight of the comsat. We assume that the gain pattern of the ground station is circularly symmetric; the angle-off-station-boresight then provides an attenuation of the uplink power which we use to assess the likely effect upon the passive instrument’s operations. We assume that each ground station can communicate with all the comsats in its field of view; this implies that, on average, a ground station can engage with 46 comsats simultaneously. The analysis is repeated for the case when the uplink broadcast within the ATMS passive channels (in-band scenario) and for the case when the uplink is limited to frequencies adjacent to the ATMS channels (out-of-band scenario). The antenna of the ground station is modelled as having a HPBW (Half-Power Beam Width) of 0.16 deg and EIRP (Equivalent Isotropic Radiated Power) of 70 dBW. We account for the geometric dissipation of the signal caused by the satellite orbital altitude, the attenuation induced by atmospheric gasses at 51 GHz and the mismatch between the circular polarization of the ground-based transmitting antenna and the linear polarization of the satellite-borne receiving antenna. The damages on ATMS are estimated from bench-level measurement conducted at the ATMS’ manufacturer facilities [unpublished].

passive microwave↗

Temperature Dependence of Band Gap Renormalization in High-T Sensor Materials via First-Principles and Experimental Corroboration

Understanding the temperature dependence of functional properties of high-T gas sensing materials is vital for their applications in combustion environments. The electron-phonon coupling that derives the electronic structure change with temperatures is a key property of interest as it affects other sensing responses. Herein, we assess the temperature dependence of band gap renormalization in metal oxides and perovskites by employing Allen-Heine-Cardona theory with first-principles simulations and corroborate with experimental observation. The calculated temperature-dependent band gap changes of these materials studied are in good agreement with in-house experimental data, proving that the theory can adequately predict renormalization on the band gap in the system of interest. The predicted and measured band gap variations are characterized using an analytical model, which can provide useful insights on the simulated zero-temperature band gaps. Based on the available data, a set of 53 metal oxides and perovskites were identified as potential high-T gas sensors. A machine learning model has been developed to predict the band-gap change by capturing the overall trend of the empirical parameters with respect to a reduced feature obtained by transforming the set of available physical features.

Park, Jongwoo↗

Slip band characteristics in the presence of grain boundaries in nickel-based superalloy

Shear strain profiles along slip bands in a modified Rolls-Royce nickel superalloy (RR1000) were analyzed for a tensile sample deformed by 2%. The strain increased with distance away from a grain boundary (GB), with maximum shear strain towards the center of the grain, indicating that dislocation nucleation generally occurred in the grain interior. The strain gradients in the neighborhood of the GBs were quantified and generally correlated with rotation about the active slip system line direction. This leads to an ability to determine the active slip system in these regions. The dislocation spacing and pileup stresses were inferred. The dislocation spacing closely follows an Eshelby analytical solution for a single ended pileup of dislocations under an applied stress. The distribution of pileup stress values for GBs of a given misorientation angle follows a log-normal distribution, with no correlation between the pileup stress and the GB misorientation angle. Furthermore, there is no observed correlation between various transmissivity factors and slip band pileup stress. Hence it appears that the obstacle strength of any of the observed GBs is adequate to facilitate the dislocation pileups present in the slip bands. However, slip band transmission does correlate with transmissivity factors, with the current study focusing on the Luster and Morris m’-factor. Observation of strain profiles of transmitted bands indicate dislocation nucleation locations.

36 MATERIALS SCIENCE↗

Spatial Registration Assessments for the SNPP and N20 VIIRS Reflective Solar Bands Using Unscheduled Lunar Observations

The Visible Infrared Imaging Radiometer Suite (VIIRS) is a multi-spectral Earth-observing instrument on board the Suomi-NPP (SNPP) and NOAA-20 (N20) spacecraft, with spectral bands ranging in wavelength from 0.41 to 12.2 μm. For the reflective solar bands (RSB), the bands are calibrated on orbit using both solar diffuser (SD) and lunar observations. The lunar observations use near-monthly scheduled spacecraft maneuvers in order to view the Moon within a desired phase angle range. While the primary purpose of the maneuvers is for radiometric calibration, these observations can also be used to characterize the spatial performance of the instrument, including the band-to-band and detector-to-detector registration (BBR/DDR). The Moon can also be observed without spacecraft maneuvers. However, these observations are over a larger phase angle range. While the geometry of these unscheduled observations is more varied, they can still be used to assess the sensor performance. In this work, we will use unscheduled Moon data to analyze the BBR and DDR of the SNPP and N20 VIIRS RSB. For the BBR, we implemented an image cross-correlation approach, which removes the residual oscillations in the trending data when compared to previous methodologies. For the DDR, we developed an edge fitting approach that accounts for the lunar motion across the VIIRS focal plane array on a scan-by-scan basis using lunar and satellite ephemeris data. In our analysis, we find that the BBR and DDR for both VIIRS RSB are stable on orbit.

Band-to-band registration (BBR)↗

Atomistic modeling of energy band alignment in CdTe(1 0 0) and CdTe(1 1 1) surfaces

An atomic-scale perspective of energy band alignment in CdTe surfaces has not been spatially studied despite the major role surfaces play in forming interfaces within CdTe-based thin film photovoltaic devices. Atomistic modeling based on density functional theory coupled with surface Green’s function is used for calculating energy band alignment of CdTe surfaces. The CdTe(1 0 0) ((1×1) and c(2×2) reconstruction) and CdTe(1 1 1) ((1×1) and (2×2) reconstruction) facets without and with surface relaxation provide insightful band bending characteristics that influence charge carrier transport. Results show that unrelaxed (1×1) CdTe(1 0 0) and CdTe(1 1 1) surfaces bend the valence band downward with surface polarity dictating the surface potential magnitude. The reconstructed CdTe(1 0 0) c(2×2) and CdTe(1 1 1) (2×2) surfaces result in favorable surface electronic features in relation to their unreconstructed variants. In addition, the structurally relaxed CdTe(1 1 1) surfaces develop an internal energy cusp potential that may enhance hole charge transport toward the back of CdTe solar cell devices. In conclusion, energy band alignments calculated within the study lead to a detailed understanding of how CdTe surfaces may affect CdTe-based thin film photovoltaic applications.

36 MATERIALS SCIENCE↗

Monte Carlo Explicitly Correlated Second-Order Many-Body Green’s Function Calculations of Semiconductor Band Gaps

A systematically converging series of ab initio, post-density-functional, size-consistent, electron-correlated approximations is desired for predictive computing of felectronic band structures of insulating, semiconducting, and metallic solids. A series that meets all of these desiderata (except the applicability to metals) is ab initio many-body Green's function theory based on Gaussian-type-orbital (GTO) basis sets. Here, its leading-order approximation, the second-order Green's function (GF2) method in the diagonal and frequency-independent approximations with the aug-cc-pVDZ basis set, is applied to the fundamental band gaps of three semiconductors (diamond, silicon, and silicon carbide in the zincblende structure) using cluster models. Corrections are made to the basis-set-incompleteness errors by the explicit-correlation (F12) ansatz (GF2-F12) for the valence band edges. The crystals are modeled as surface-passivated clusters of increasing sizes, whose wave functions are expanded by up to 2709 GTO basis functions. Immense computational costs of these calculations are overcome by the highly scalable stochastic algorithm of the Monte Carlo GF2-F12 method, whose operation cost per state increases only as a cubic power of system size, which has a tiny memory footprint and easily achieves near-perfect parallel efficiency on thousands of CPUs or on hundreds of GPUs. The correlated, F12-corrected highest-occupied and lowest-unoccupied molecular-orbital energy (HOMO-LUMO) gap is 5.78 ± 0.07 eV for C 87 H 76 as compared with the experimental value of the fundamental (indirect) band gap of bulk diamond at 5.48 eV. The correlated, F12-corrected HOMO-LUMO gaps for Si 75 H 76 and Si 32 C 43 H 76 are 2.56 ± 0.15 eV and 3.50 ± 0.12 eV, respectively, which are expected to decrease further with increasing cluster sizes. As a result, the experimental fundamental (indirect) band gaps of bulk silicon and silicon carbide are 1.17 eV and 2.42 eV, respectively.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Spatiotemporal Imaging of Thickness-Induced Band-Bending Junctions

van der Waals materials exhibit naturally passivated surfaces and an ability to form versatile heterostructures to enable an examination of carrier transport mechanisms not seen in traditional materials. Here, we report a new type of homojunction termed a "band-bending junction" whose potential landscape depends solely on the difference in thickness between the two sides of the junction. Using MoS 2 on Au as a prototypical example, we find that surface potential differences can arise from the degree of vertical band bending in thin and thick regions. Furthermore, by using scanning ultrafast electron microscopy, we examine the spatiotemporal dynamics of charge carriers generated at this junction and find that lateral carrier separation is enabled by differences in the band bending in the vertical direction, which we verify with simulations. As a result, band-bending junctions may therefore enable new optoelectronic devices that rely solely on band bending arising from thickness variations to separate charge carriers.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

Visualizing Orbital Content of Electronic Bands in Anisotropic 2D Semiconducting ReSe 2

Many properties of layered materials change as they are thinned from their bulk forms down to single layers, with examples including indirect-to-direct band gap transition in 2H semiconducting transition metal dichalcogenides as well as thickness-dependent changes in the valence band structure in post-transition-metal monochalcogenides and black phosphorus. Here, we use angle-resolved photoemission spectroscopy to study the electronic band structure of monolayer ReSe 2 , a semiconductor with a distorted 1T structure and in-plane anisotropy. By changing the polarization of incoming photons, we demonstrate that for ReSe 2 , in contrast to the 2H materials, the out-of-plane transition metal dz2 and chalcogen pz orbitals do not contribute significantly to the top of the valence band, which explains the reported weak changes in the electronic structure of this compound as a function of layer number. We estimate a band gap of 1.7 eV in pristine ReSe 2 using scanning tunneling spectroscopy and explore the implications on the gap following surface doping with potassium. Additionally, a lower bound of 1.4 eV is estimated for the gap in the fully doped case, suggesting that doping-dependent many-body effects significantly affect the electronic properties of ReSe 2 . Our results, supported by density functional theory calculations, provide insight into the mechanisms behind polarization-dependent optical properties of rhenium dichalcogenides and highlight their place among two-dimensional crystals.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Electronic Band Structures of a Germanium Halide Perovskite Semiconductor

CsGeX 3 , a class of halide perovskites, is an emergent semiconductor with ferroelectricity and potential optoelectronic properties that can be harnessed for device applications. However, measurements of the electronic structure for this class of material are still lacking. Here, in this work, we report, for the first time, the experimental band structures of CsGeI 3 , a ferroelectric halide perovskite semiconductor, through angle-resolved photoemission spectroscopy (ARPES). The crystals were cleaved along both the (110) and (111) surfaces, facilitating the observation of clear valence band dispersions in several high-symmetry momentum directions. The observed valence band is characterized by a small hole effective mass of ∼0.1m 0 at the valence band maximum, without notable spectral signatures associated with the Rashba effect. Our experimental measurements are supported by electronic structure calculations in the DFT + G0W0 framework, enabling assessment of the band orbital characteristics, dispersion, and spin-splitting. This work unveils the intrinsic electronic and transport properties of CsGeX 3 , thereby advancing the optimization of the optoelectronic properties of this class of materials.

angle-resolved photoemission spectroscopy↗

Influence of strain and dislocations on GaSb/GaAs quantum dots: From nested to staggered band alignment

We investigate the influence of strain and dislocations on band alignment in GaSb/GaAs quantum dot systems. Composition profiles from cross-sectional scanning tunneling microscopy images are interpolated onto a finite element mesh in order to calculate the distribution of local elastic strain, which is converted to a spatially varying band alignment using deformation potential theory. Our calculations predict that dislocation-induced strain relaxation and charging lead to significant local variations in band alignment. Furthermore, misfit strain induces a transition from a nested (type I) to a staggered (type II) band alignment. Although dislocation-induced strain relaxation prevents the type I to type II transition, electrostatic charging at dislocations induces the staggered band alignment once again.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Spin-textured Chern bands in AB-stacked transition metal dichalcogenide bilayers

Significance The long-wavelength moiré superlattices in twisted two-dimensional (2D) structures have emerged as a highly tunable platform for strongly correlated electron physics. In this work, we reveal the displacement field–induced topological moiré bands in AB-stacked transition-metal dichalcogenide (TMD) heterobilayer M o T e 2 / W S e 2 . Valley-contrasting Chern bands with nontrivial spin texture are formed from interlayer hybridization between M o T e 2 and W S e 2 bands of nominally opposite spins. The general mechanism for band inversion we uncovered in AB-stacked TMD bilayers is quite robust and can be applied to other material combinations as well. Our study establishes a recipe for creating topological bands in AB-stacked TMD bilayers in general, which provides a highly tunable platform for realizing quantum-spin Hall and interaction-induced quantum anomalous Hall effects.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗

Flat-band tuning and emergent itinerant magnetism in Sr(Co 1− x Pd x ) 2 As 2

The interplay between magnetism and flat-band (FB) instability is a central theme in quantum materials research. A striking example is the emergence of magnetic order in a nominally nonmagnetic compound when a flat band is tuned near the Fermi energy (E F ). Here, in this study, we investigate this phenomenon in the Pauli paramagnet SrCo 2 As 2 , where an FB associated with Co e g orbitals lies close to E F . Remarkably, a minute substitution of the nonmagnetic element Pd onto the Co site (~2%) induces antiferromagnetic order with a transition temperature as high as T N = 25 K. Temperature- and magnetic-field-dependent magnetic and transport measurements, complemented by zero-field neutron diffraction, reveal a helical magnetic order for x ≤ 0.10 in Sr(Co 1−x Pd x ) 2 As 2 , transitioning to a complex ferromagnetic state at higher Pd concentrations. Spectroscopic evidence and theoretical band structure calculations demonstrate that electron doping shifts the flat band closer to E F , significantly enhancing the Stoner parameter. This enhancement drives a strong ferromagnetic instability, leading to helical magnetic ordering dominated by in-plane ferromagnetic interactions. The emergence of robust magnetic ordering through substitution with nonmagnetic elements is a unique phenomenon that underscores the pivotal role of flat-band instability in tuning magnetism in itinerant systems.

36 MATERIALS SCIENCE↗

Band Engineering of Large-Twist-Angle Graphene/h-BN Moiré Superlattices with Pressure

Graphene interfacing hexagonal boron nitride (h-BN) forms lateral moiré superlattices that host a wide range of new physical effects such as the creation of secondary Dirac points and band gap opening. A delicate control of the twist angle between the two layers is required as the effects weaken or disappear at large twist angles. In this Letter, we show that these effects can be reinstated in large-angle (~1.8°) graphene/h-BN moiré superlattices under high pressures. Additionally, a graphene/h-BN moiré superlattice microdevice is fabricated directly on the diamond culet of a diamond anvil cell, where pressure up to 8.3 GPa is applied. The band gap at the primary Dirac point is opened by 40-60 meV, and fingerprints of the second Dirac band gap are also observed in the valence band. Theoretical calculations confirm the band engineering with pressure in large-angle graphene/h-BN bilayers.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Efficient computational design of two-dimensional van der Waals heterostructures: Band alignment, lattice mismatch, and machine learning

Here, we develop a computational database, website applications (web-apps), and machine-learning (ML) models to accelerate the design and discovery of two-dimensional (2D) heterostructures. Using density functional theory (DFT) based lattice parameters and electronic band energies for 674 nonmetallic exfoliable 2D materials, we generate 226 779 possible bilayer heterostructures. We classify these heterostructures into type-I, -II, and -III systems according to Anderson’s rule, which is based on the relative band alignments of the noninteracting monolayers. We find that type II is the most common and type III the least common heterostructure type. We subsequently analyze the chemical trends for each heterostructure type in terms of the Periodic Table of constituent elements. The band alignment data can also be used for identifying photocatalysts and high-work-function 2D metals for contacts. We validate our results by comparing them to experimental data as well as hybrid-functional predictions. Additionally, we carry out DFT calculations of a few selected systems (MoS 2 /WSe 2 , MoS 2 /h-BN, and MoSe 2 /CrI 3 ), to compare the band-alignment description with the predictions from Anderson’s rule. We develop web-apps to enable users to virtually create combinations of 2D materials and predict their properties. Additionally, we use ML tools to predict band-alignment information for 2D materials. The web-apps, tools, and associated data will be distributed through the JARVIS-HETEROSTRUCTURE website. Our analysis, results, and the developed web-apps can be applied to the screening and design applications, such as finding alternative photocatalysts, photodetectors, and high-work-function (WF) 2D-metal contacts.

2-dimensional systems↗

Right band gaps for the right reason at low computational cost with a meta-GGA

In density functional theory, traditional explicit density functionals such as the local density approximation and generalized gradient approximations cannot accurately predict the band gap of solids for a fundamental reason: They lack the exchange-correlation derivative discontinuity. By comparing Kohn-Sham and generalized Kohn-Sham calculations, we here show that the nonempirical meta-generalized-gradient-approximation (meta-GGA) TASK from Aschebrock and Kümmel [Phys. Rev. Res. 1, 033082 (2019)] predicts the right gaps for the right reason, i.e., as a combination of a proper Kohn-Sham gap and a substantial derivative discontinuity contribution. For many materials from small-gap semiconductors to large-gap insulators, the proper band gap is thus obtained. Here we further study a group of metal-halide perovskites for which the band gap is notoriously hard to predict. For these materials, TASK yields band gaps very similar to the nonlocal screened hybrid Heyd-Scuseria-Ernzerhof functional, yet at a fraction of the hybrid functional’s computational cost. We discuss the influence of correlation functionals, and open questions in the comparison of calculated band gaps with experimental ones.

36 MATERIALS SCIENCE↗