Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “Amplifiers”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 487 records · Page 27
All sourcesNASA NTRSDOE OSTI
NASA NTRS2002

W-band InP based HEMT MMIC low noise amplifiers

This paper presents the designs and measurement results of a three-stage and a four-stage W-band monolithic microwave integrated circuits (MMIC) including a three-stage and a four-stage low noise amplifiers.

monolithic microwave integrated circuits low noise↗
NASA NTRS2000

Cryogenic MMIC Low Noise Amplifiers

Monolithic (MMIC) and discrete transistor (MIC) low noise amplifiers are compared on the basis of performance, cost, and reliability. The need for cryogenic LNA's for future large microwave arrays for radio astronomy is briefly discussed and data is presented on a prototype LNA for the 1 to 10 GZH range along with a very wideband LNA for the 1 to 60 GHz range.

MMIC Low-noise amplifier↗
NASA NTRS1995

High Power Amplifier Harmonic Output Level Measurement

A method is presented for the measurement of the harmonic output power of high power klystron amplifiers, involving coherent hemispherical radiation pattern measurements of the radiated klystron output. Results are discussed for the operation in saturated and unsaturated conditions, and with a waveguide harmonic filter included.

klystron amplifiers harmonic output power measurem↗
NASA NTRS2000

Monolithic Power Amplifiers Covering 70-115 GHz

A number of monolithic W-band power amplifiers have been developed for local oscillators of the Far Infrared and Sub-millimeter Telescope.

power amplifiers monolithic microwave integrated c↗
NASA NTRS2005

Medium power amplifiers covering 90 - 130 GHz for telescope local oscillators

This paper describes a set of power amplifier (PA) modules containing InP High Electron Mobility Transistor (HEMT) Monolithic Millimeter-wave Integrated Circuit (MMIC) chips. The chips were designed and optimized for local oscillator sources in the 90-130 GHz band for the Atacama Large Millimeter Array telescope. The modules feature 20-45 mW of output power, to date the highest power from solid state HEMT MMIC modules above 110 GHz.

coplanar waveguides↗
NASA NTRS2006

Single Event Transient Analysis of an SOI Operational Amplifier for Use in Low-Temperature Martian Exploration

The next generation of Martian rover#s to be launched by JPL are to examine polar regions where temperatures are extremely low and the absence of an earth-like atmosphere results in high levels of cosmic radiation at ground level. Cosmic rays lead to a plethora of radiation effects including Single Event Transients (SET) which can severely degrade microelectronic functionality. As such, a radiation-hardened, temperature compensated CMOS Single-On-Insulator (SOI) Operational Amplifier has been designed for JPL by the University of Tennessee and fabricated by Honeywell using the SOI V process. SOI technology has been shownto be far less sensitive to transient effects than both bulk and epilayer Si. Broad beam heavy-ion tests at the University of Texas A&M using Kr and Xebeams of energy 25MeV/amu were performed to ascertain the duration and severity of the SET for the op-amp configured for a low and high gain application. However, some ambiguity regarding the location of transient formation required the use of a focused MeV ion microbeam. A 36MeV O6(+) microbeam. the Sandia National Laboratory (SNL) was used to image and verify regions of particular concern. This is a viewgraph presentation

operational amplifier↗
NASA NTRS2008

First On-Wafer Power Characterization of MMIC Amplifiers at Sub-Millimeter Wave Frequencies

Recent developments in semiconductor technology have enabled advanced submillimeter wave (300 GHz) transistors and circuits. These new high speed components have required new test methods to be developed for characterizing performance, and to provide data for device modeling to improve designs. Current efforts in progressing high frequency testing have resulted in on-wafer-parameter measurements up to approximately 340 GHz and swept frequency vector network analyzer waveguide measurements to 508 GHz. On-wafer noise figure measurements in the 270-340 GHz band have been demonstrated. In this letter we report on on-wafer power measurements at 330 GHz of a three stage amplifier that resulted in a maximum measured output power of 1.78mW and maximum gain of 7.1 dB. The method utilized demonstrates the extension of traditional power measurement techniques to submillimeter wave frequencies, and is suitable for automated testing without packaging for production screening of submillimeter wave circuits.

monolithic microwave integrated circircuit↗
NASA NTRS2017

Waveguide Multimode Directional Coupler for Harvesting Harmonic Power from the Output of Traveling-Wave Tube Amplifiers

This paper presents the design, fabrication, and test results for a novel waveguide multimode directional coupler (MDC). The coupler fabricated from dissimilar frequency band waveguides, is capable of isolating power at the 2nd harmonic frequency from the fundamental power at the output port of traveling-wave tube amplifiers. Test results from proof-of-concept demonstrations are presented for Ku/Ka-band and Ka/E-band MDCs, which demonstrate sufficient power in the 2nd harmonic for a space borne beacon source for mm-wave atmospheric propagation studies.

Directional Coupler↗