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At least 469 records · Page 26
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

Synthesis of multicomponent oxygen evolution reaction coatings via block copolymer templating with vapor- and solution-phase precursors

Porous mixed transition metal oxide heterostructures are promising electrocatalysts due to their high surface area. However, achieving conformal multicomponent oxide coatings with controlled nanoscale architectures remains challenging. Here, we report a synthesis strategy that integrates solution-based swelling infiltration (SBI) with gas-phase sequential infiltration synthesis (SIS) in a block copolymer template to fabricate porous, high-surface-area, conformal mixed-oxide electrocatalytic coatings. In this approach, a PS75-P4VP25 block copolymer (BCP) film is first infiltrated with transition metal acetylacetonate precursors via SBI, followed by exposure to gas phase precursors of ZnO via SIS process. Thermal annealing of the infiltrated BCP films converts them into all-inorganic Fe–ZnO, Fe–Co–ZnO, and Fe–Ni–ZnO coatings. Electrochemical testing on 70 nm thick conformal coatings demonstrates promising oxygen evolution reaction (OER) activity in alkaline media, with mass-specific current densities up to 1.0 × 10 5 mA/g at an overpotential of 330 mV (vs. RHE) at ultralow loading (~0.005 g/cm 2 ). Among the compositions, Fe–Co–ZnO and amorphous Fe–Ni–ZnO show the best OER performance, delivering current densities of 2.00 and 3.04 mA/cm 2 , respectively, compared to 1.52 mA/cm 2 for Fe–ZnO.. This work establishes SBI–SIS as a versatile route for fabricating nm-thin, high-performance multicomponent oxide heterostructures on cost-efficient supports, enabling efficient catalyst utilization in electrochemical energy conversion application.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2021

Epitaxial Ferroelectric Hf 0.5 Zr 0.5 O 2 with Metallic Pyrochlore Oxide Electrodes

The synthesis of fully epitaxial ferroelectric Hf 0.5 Zr 0.5 O 2 (HZO) thin films through the use of a conducting pyrochlore oxide electrode that acts as a structural and chemical template is reported. Such pyrochlores, exemplified by Pb 2 Ir 2 O 7 (PIO) and Bi 2 Ru 2 O 7 (BRO), exhibit metallic conductivity with room-temperature resistivity of <1 mΩ cm and are closely lattice matched to yttria-stabilized zirconia substrates as well as the HZO layers grown on top of them. Evidence for epitaxy and domain formation is established with X-ray diffraction and scanning transmission electron microscopy, which show that the c-axis of the HZO film is normal to the substrate surface. The emergence of the non-polar-monoclinic phase from the polar-orthorhombic phase is observed when the HZO film thickness is ≥≈30 nm. Furthermore, thermodynamic analyses reveal the role of epitaxial strain and surface energy in stabilizing the polar phase as well as its coexistence with the non-polar-monoclinic phase as a function of film thickness.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Modulation of the electronic states of perovskite SrCrO 3 thin films through protonation via low-energy hydrogen plasma implantation approaches

Hydrogenation of transition metal oxides offers a powerful platform to tailor physical functionalities as well as for potential applications in modern electronic technologies. An ideal nondestructive and efficient hydrogen incorporation approach is important for the realistic technological applications. We demonstrate the proton injection on SrCrO 3 thin films via an effecient low-energy hydrogen plasma implantation experiments, without destroying the original lattice framework. Hydrogen ions accumulate largely at the interfacial regions with amorphous character which extend about one-third of the total thickness. The H x SrCrO 3 (HSCO) thin films appear like exfoliated layers which however retain the fully strained state with distorted perovskite structure. Proton doping induces the change of Cr oxidation state from Cr 4+ to Cr 3+ in HSCO thin films and a transition from metallic to insulating phase. As a result, our investigations suggest an attractive platform in manipulating the electronic phases in proton-based approaches and may offer a potential peeling off strategy for nanoscale devices through low-energy hydrogen plasma implantation approaches.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2019

Conformal High-K Dielectric Coating of Suspended Single-Walled Carbon Nanotubes by Atomic Layer Deposition

As one of the highest mobility semiconductor materials, carbon nanotubes (CNTs) have been extensively studied for use in field effect transistors (FETs). To fabricate surround-gate FETs— which offer the best switching performance—deposition of conformal, weakly-interacting dielectric layers is necessary. This is challenging due to the chemically inert surface of CNTs and a lack of nucleation sites—especially for defect-free CNTs. As a result, a technique that enables integration of uniform high-k dielectrics, while preserving the CNT’s exceptional properties is required. In this work, we show a method that enables conformal atomic layer deposition (ALD) of high-k dielectrics on defect-free CNTs. By depositing a thin Ti metal film, followed by oxidation to TiO2 under ambient conditions, a nucleation layer is formed for subsequent ALD deposition of Al2O3. The technique is easy to implement and is VLSI-compatible. We show that the ALD coatings are uniform, continuous and conformal, and Raman spectroscopy reveals that the technique does not induce defects in the CNT. The resulting bilayer TiO2/Al2O3 thin-film shows an improved dielectric constant of 21.7 and an equivalent oxide thickness of 2.7 nm. The electrical properties of back-gated and top-gated devices fabricated using this method are presented.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Metal Nitride Electrode Stress and Chemistry Effects on Phase and Polarization Response in Ferroelectric Hf 0.5 Zr 0.5 O 2 Thin Films

Ferroelectric phase stability in hafnium oxide is reported to be influenced by factors that include composition, biaxial stress, crystallite size, and oxygen vacancies. In the present work, the ferroelectric performance of atomic layer deposited Hf 0.5 Zr 0.5 O 2 (HZO) prepared between TaN electrodes that are processed under conditions to induce variable biaxial stresses is evaluated. The post-processing stress states of the HZO films reveal no dependence on the as-deposited stress of the adjacent TaN electrodes. All HZO films maintain tensile biaxial stress following processing, the magnitude of which is not observed to strongly influence the polarization response. Subsequent composition measurements of stress-varied TaN electrodes reveal changes in stoichiometry related to the different preparation conditions. HZO films in contact with Ta-rich TaN electrodes exhibit higher remanent polarizations and increased ferroelectric phase fractions compared to those in contact with N-rich TaN electrodes. HZO films in contact with Ta-rich TaN electrodes also have higher oxygen vacancy concentrations, indicating that a chemical interaction between the TaN and HZO layers ultimately impacts the ferroelectric orthorhombic phase stability and polarization performance. The results of this work demonstrate a necessity to carefully consider the role of electrode processing and chemistry on performance of ferroelectric hafnia films.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2025

Interfacial reconstruction effects in insulating double perovskite Nd2NiMnO6/SrTiO3 and Nd2NiMnO6/NdGaO3 thin films

Ferromagnetic insulating (FMI) double perovskite oxides (DPOs) A2BB′O6 with near-room-temperature Curie temperatures are promising candidates for ambient-temperature spintronics applications. To realize their potential, epitaxial stabilization of DPO films and understanding the effect of multiple broken symmetries across the film/substrate interface are crucial. This study investigates ultrathin films of the FMI Nd2NiMnO6 grown on SrTiO3 (STO) and NdGaO3 (NGO) substrates. By comparing growth on these substrates, we examine the influence of polarity and structural symmetry mismatches, which are absent in the NGO system. The interface exhibits immeasurable resistance in both cases. Using synchrotron x-ray diffraction, we show that films have three octahedral rotational domains because of the structural symmetry mismatch with the STO substrate. Furthermore, our coherent Bragg rod analysis of specular x-ray diffraction reveals a significant modification of the out-of-plane lattice parameter within a few unit cells at the film/substrate interface and the surface. This arises from polarity compensation and surface symmetry breaking, respectively. These structural alterations influence the Mn orbital symmetry, a dependence that we further confirm through x-ray linear dichroism measurements. Since the ferromagnetism in insulating DPOs is mediated by orbital-dependent superexchange interactions [Phys. Rev. Lett. 100, 186402 (2008)0031-900710.1103/PhysRevLett.100.186402], our study provides a framework for understanding the evolution of magnetism in ultrathin geometry.

Bhattacharya, Nandana↗
DOE OSTI2022

Microstructure of Methylammonium Lead iodide Perovskite Thin Films: A Comprehensive Study of the Strain and Texture

Controlling the microstructure of hybrid halide perovskite thin films is essential for optimizing their performance in optoelectronic devices. It is well established that the strain state of the perovskite layer affects its stability. Likewise, the orientation of the perovskite lattice is a determining parameter as these materials have shown pronounced anisotropies in their physical and mechanical properties. In this work, the authors focus on the understanding of the mechanisms that govern the strain and texture observed in MAPbI 3 thin films deposited on various oxide substrates. A thorough study of the evolution of the strain of the perovskite layer upon cooling down to room temperature from the crystallization temperature (100 °C) shows an essentially relaxed behavior of the perovskite layers. This result contradicts the commonly accepted hypothesis according to which MAPbI 3 layers synthesized above ambient temperature are strained due to the large mismatch in the thermal expansion coefficients of the perovskite and its substrate. The texture in MAPbI 3 layers is investigated by means of synchrotron full-field diffraction X-ray microscopy. This technique allows the direct observation of the [hh0] and [00l]-oriented domains at the origin of the observed textures, demonstrating both their twin and ferroelastic nature. The stability of the different domain orientations is investigated by DFT calculations, illustrating the determining role of the chemical environment at the film-substrate interface. PbI 2- terminated surfaces are found to favor the [hh0] orientations while for MAI-terminated ones, both [hh0] and [00l] domains are equally stabilized. The different results constitute an important step of clarification and understanding from the perspective of controlling the microstructure of perovskite layers.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Crystallographic registry in epitaxial V3O5 thin films

Crystallographic orientation plays a central role in determining transport properties in correlated oxides with low-hysteresis metal–insulator transitions. Here, V3O5 thin films were grown on Al2O3 (0001) and their crystallographic registry was evaluated using x-ray diffraction and cross-sectional transmission electron microscopy. θ–2θ measurements show a single out-of-plane orientation defined by the (202) reflection. Azimuthal φ-scans of the V3O5 (310) reflection exhibit twelve discrete maxima over 360°, indicating a finite set of in-plane orientations imposed by the substrate symmetry. High-resolution TEM and fast Fourier transform analysis confirm crystallographic coherence at the film–substrate interface. The electrical conductivity exhibits a metal–insulator transition at TMIT ≈ 423 K with no measurable thermal hysteresis and a total change of ~1.6 orders of magnitude between 300 and 480 K. These results establish crystallographic registry in epitaxial V3O5 thin films and provide a structurally well-defined system for future studies of orientation-dependent transport.\r\nT

36 MATERIALS SCIENCE↗
DOE OSTI2023

Vacuum-Healing of Grain Boundaries in Sodium-Doped CuInSe 2 Solar Cell Absorbers

Alkali metal doping and grain boundaries (GB) have been at the center of attention within the Cu(In,Ga)(S,Se) 2 photovoltaics community for years. This study provides the first experimental evidence that the GB of sodium-doped CuInSe 2 thin films may undertake reversible oxidation even at room temperature, whereas undoped films may not. The findings are corroborated by cathodoluminescence imaging, secondary ion mass spectrometry, and Kelvin probe force microscopy on air-exposed films subsequently subject to vacuum. A thermochemical assessment identifies the likely solid-gas equilibria involved. These reactions open new research questions with respect to the beneficial role played by alkali metal dopants in chalcopyrite solar cells and may steer the community toward new breakthroughs.

14 SOLAR ENERGY↗
DOE OSTI2023

Compatibility of Wrought Superalloys with Supercritical CO2

Supercritical CO2 (sCO2) power cycles, particularly direct-fired cycles, have the possibility of revolutionizing clean fossil energy with peak temperatures above 700 °C and wrought precipitation strengthened alloys like Haynes 282™ for structural components. At temperatures <650 °C, it would be desirable to use less expensive alloys, however, steels are known to be susceptible to carburization. Laboratory 300 bar sCO2 autoclave results were collected on a range of alloys including less expensive Ni-based alloys like 825 compared to advanced austenitic steels like alloy 709 at 600 °C. Both alloys 825 and 709 formed thin, protective Cr-rich oxides after 1,000 h. Alloy 825 also was exposed for 1,000 h in sCO2 at 800 °C and compared to a range of Ni-based alloys. Comparing alloys 625, 825, and 282, the mass gain increased with increasing alloy Ti content under these conditions. High Al superalloys did not perform significantly better under these conditions at 800 °C.

Pint, Bruce↗
DOE OSTI2019

Evaluating the accuracy of common γ-Al 2 O 3 structure models by selected area electron diffraction from high-quality crystalline γ-Al 2 O 3

Single crystal and textured polycrystalline γ-Al 2 O 3 thin films were synthesized by oxidation of NiAl(110) in air at 850 °C for 1 and 2 hours, respectively, and used to evaluate the accuracy of two spinel-based and two nonspinel models by comparison of selected-area electron diffraction (SAED). The lattice interplanar distances derived from the polycrystalline SAED pattern most closely matched the cubic spinel γ-Al 2 O 3 model. The single-crystal SAED spot pattern reflected symmetry consistent with both the cubic spinel and tetragonal nonspinel models, yet, the Al cation distribution better matched the cubic spinel model based on the relative intensities of diffraction spots. Our work indicates that the traditional cubic spinel model is a more accurate model of γ-Al 2 O 3 than the other models considered. Furthermore, the spinel-based monoclinic model is more accurate than the monoclinic nonspinel model. The understanding of the relative accuracy of the different models is key for simulating γ-Al 2 O 3 containing systems and is of general interest for the metal oxide and ceramic communities.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2019

Realization of BaZrS 3 chalcogenide perovskite thin films for optoelectronics

BaZrS 3 is a prototypical chalcogenide perovskite, an emerging class of unconventional semiconductor. Recent results on powder samples reveal that it is a material with a direct band gap of 1.7–1.8 eV, a very strong light-matter interaction, and a high chemical stability. Due to the lack of quality thin films, however, many fundamental properties of chalcogenide perovskites remain unknown, hindering their applications in optoelectronics. In this work, we report the fabrication of BaZrS 3 thin films, by sulfurization of oxide films deposited by pulsed laser deposition. We show that these films are n-type with carrier densities in the range of 10 19 -10 20 cm -3 . Depending on the processing temperature, the Hall mobility ranges from 2.1 to 13.7 cm 2 /Vs. The absorption coefficient is > 10 5 cm -1 at photon energy >1.97 eV. Temperature dependent conductivity measurements suggest shallow donor levels. By assuring that BaZrS 3 is a promising candidate, these results potentially unleash the family of chalcogenide perovskites for optoelectronics such as photodetectors, photovoltaics, and light emitting diodes.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Generation of electric-field stabilized zirconium monoxide secondary phase within cubic zirconia

Flash sintering of cubic yttria-stabilized zirconia has been studied via in situ energy dispersive diffraction. A secondary rocksalt-phase zirconium monoxide was observed emerging from the primary fluorite-phase zirconium dioxide, previously only observed as a thin interlayer at metal-oxide interfaces, upon application of a direct current electric field. The average secondary phase intensity rose over extended flow of direct current through the ceramic, faded upon removal of the field and disappeared entirely upon application of an alternating current electric field. The results indicate that the sustained application of a direct current electric field can result in significant electrochemical reduction of zirconia under high current density conditions. Poor sinterability and cracking under direct current is apparent and potential mechanisms discussed therein.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Combined experimental-theoretical study of electron mobility-limiting mechanisms in SrSnO 3

The discovery and development of ultra-wide bandgap (UWBG) semiconductors is crucial to accelerate the adoption of renewable power sources. This necessitates an UWBG semiconductor that exhibits robust doping with high carrier mobility over a wide range of carrier concentrations. Here we demonstrate that epitaxial thin films of the perovskite oxide Nd x Sr 1 – x SnO 3 (SSO) do exactly this. Nd is used as a donor to successfully modulate the carrier concentration over nearly two orders of magnitude, from 3.7 × 10 18 cm –3 to 2.0 × 10 20 cm –3 . Despite being grown on lattice-mismatched substrates and thus having relatively high structural disorder, SSO films exhibited the highest room-temperature mobility, ~70 cm 2 V –1 s –1 , among all known UWBG semiconductors in the range of carrier concentrations studied. The phonon-limited mobility is calculated from first principles and supplemented with a model to treat ionized impurity and Kondo scattering. This produces excellent agreement with experiment over a wide range of temperatures and carrier concentrations, and predicts the room-temperature phonon-limited mobility to be 76–99 cm 2 V –1 s –1 depending on carrier concentration. This work establishes a perovskite oxide as an emerging UWBG semiconductor candidate with potential for applications in power electronics

36 MATERIALS SCIENCE↗
DOE OSTI2019

High stability SrTi 1-x Fe x O 3-δ electrodes for oxygen reduction and oxygen evolution reactions

We report that Sr(Ti 1-x Fe x )O 3-δ (STF) has recently been explored as an oxygen electrode for solid oxide electrochemical cells (SOCs). Model thin film electrode studies show oxygen surface exchange rates that generally improve with increasing Fe content when x < 0.5, and are comparable to the best Co-containing perovskite electrode materials. Recent results on porous electrodes with the specific composition Sr(Ti 0.3 Fe 0.7 )O 3-δ show excellent electrode performance and stability, but other compositions have not been tested. Here we report results for porous electrodes with a range of compositions from x = 0.5 to 0.9. The polarization resistance decreases with increasing Fe content up to x = 0.7, but increases for further increases in x. This results from the interaction of two effects – the oxygen solid state diffusion coefficient increases with increasing x, but the electrode surface area and surface oxygen exchange rate decrease due to increased sinterability and Sr surface segregation for the Fe-rich compositions. Symmetric cells showed no degradation during 1000 h life tests at 700 °C even at a current density of 1.5 A cm -2 , showing that all the STF electrode compositions worked stably in both fuel cell mode and electrolysis modes. Lastly, the excellent stability may be explained by X-ray Photoelectron Spectroscopy (XPS) results showing that the amount of surface segregated Sr did not change during the long-term testing, and by relatively low polarization resistances that help avoid electrode delamination.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Advancing next generation nanolithography with infiltration synthesis of hybrid nanocomposite resists

Organic–inorganic hybrid resists are emerging as an effective way of addressing stringent process requirements for aggressive down-scaling of semiconducting devices. Yet, hybrid resists generally require complex chemical synthesis while being predominantly negative-tone with high dose requirements. For positive-tone processes and high-aspect-ratio pattern transfers, resist choices are limited to costly, non-hybrid alternatives, whose etch resistance is still inferior compared with hybrid resists. In this work, we demonstrate a novel hybrid positive-tone resist platform utilizing simple ex situ vapor-phase inorganic infiltration into standard resist materials. A model system based on poly(methyl methacrylate) (PMMA) thin film hybridized with aluminum oxide has been demonstrated for electron-beam lithography patterning, featuring a fully controllable critical exposure dose, contrast, and etch resistance. The hybrid resist not only achieves contrast as high as ~30, six-fold enhancement over standard PMMA, but also enables Si nanostructures with resolution down to ~30 nm and an aspect ratio as high as ~17, owing to enhancement of the Si etch selectivity to ~70, with an estimated achievable maximum of ~300, far exceeding known commercial positive-tone resist systems. The easy implementabilility, combined with versatile ex situ control of resist characteristics, makes this hybrid resist synthesis method uniquely suited for addressing the resist performance and high throughput required for advanced nanolithography techniques, such as extreme ultraviolet lithography, possibly.

29 ENERGY PLANNING, POLICY, AND ECONOMY↗
DOE OSTI2020

Solid-State Sintering of Core-Shell Ceramic Powders Fabricated by Particle Atomic Layer Deposition

The properties of technical ceramics are highly dependent on their microstructure, which evolves during sintering. Sintering is the process by which ceramic parts are subjected to high temperatures to activate chemical diffusion and the consumption of porosity. During the initial stage of sintering, interparticle necks between neighboring particles form and subsequently increase in size, consuming porosity as the particle centers move closer together. To experimentally determine how this process depends on particle surface composition, particle atomic layer deposition (ALD) was used to deposit a thin film of amorphous aluminum oxide (Al2O3) onto yttria-stabilized tetragonal zirconia (3YSZ) particles, producing core-shell structured powders. The uniformity of the Al2O3 film was confirmed with transmission electron microscopy and energy dispersive spectroscopy. Scanning electron microscopy was used to observe microstructural evolution during sintering, and the dihedral angles of Al2O3 and 3YSZ grains were measured to determine the ratio of interfacial energies between the 3YSZ|3YSZ, 3YSZ|Al2O3, and Al2O3|Al2O3 interfaces. Analysis of the densification kinetics revealed that the initial stage of densification is dependent on the material at the surface of the particles (ie, the Al2O3 film) and is controlled by the diffusion of Al3+ cations through Al2O3. Once the Al2O3 film has coalesced, the sintering behavior is controlled by the densification of the core material (3YSZ). Thus, core-shell powders fabricated by particle ALD sinter by a two-step process where the kinetics are dependent on the material present at interparticle contacts.

alumina↗
DOE OSTI2023

On the confluence of ultrafast high-temperature sintering and flash sintering phenomena

Ultrafast high-temperature sintering (UHS) and flash sintering are novel methods for rapid sintering of ceramics, often completed in just a few seconds. Here, we show that both also share two additional features: an abrupt rise in electrical conductivity, which is electronic, and electroluminescence. More fundamentally, both are related to phonon physics where MD calculations have shown that proliferation of phonons at the edge of the Brillouin zone can induce Frenkel pairs without the application of electrical fields. Here, we show that, indeed, heating without the application of electric field, can also induce flash: Rapid heating processes of thin films of an oxide-salt deposited on silk fibers, with a propane torch, are shown to induce electronic conductivity, electroluminescence, and rapid sintering of the oxide. Further, the discussion in this article harkens back to two inventions, more than a century ago, which can now be related to flash and UHS: (i) the Nernst glow lamp circa 1900, made from zirconia, and (ii) the Welsbach mantle, constituted from ceria doped thorium oxide, in the late nineteenth century. Thus, the confluence between high heating rate and electric field induced flash phenomena links the past to the new. The emerging question is how injection of phonons that has been shown to create Frenkels can further induce high electronic conductivity and electroluminescence in oxides. Both electronic conductivity and luminescence are likely related to the generation of electron–hole pairs.

36 MATERIALS SCIENCE↗