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At least 469 records · Page 26

Epitaxial growth, magnetoresistance, and electronic band structure of GdSb magnetic semimetal films

Motivated by observations of extreme magnetoresistance (XMR) in bulk crystals of rare-earth monopnictide (RE-V) compounds and emerging applications in novel spintronic and plasmonic devices based on thin-film semimetals, we have investigated the electronic band structure and transport behavior of epitaxial GdSb thin films grown on III-V semiconductor surfaces. The Gd 3 + ion in GdSb has a high spin S=7/2 and no orbital angular momentum, serving as a model system for studying the effects of antiferromagnetic order and strong exchange coupling on the resulting Fermi surface and magnetotransport properties of RE-Vs. Here, we present a surface and structural characterization study mapping the optimal synthesis window of thin epitaxial GdSb films grown on III-V lattice-matched buffer layers via molecular-beam epitaxy. To determine the factors limiting XMR in RE-V thin films and provide a benchmark for band-structure predictions of topological phases of RE-Vs, the electronic band structure of GdSb thin films is studied, comparing carrier densities extracted from magnetotransport, angle-resolved photoemission spectroscopy (ARPES), and density-functional theory (DFT) calculations. ARPES shows a hole-carrier rich, topologically trivial, semimetallic band structure close to complete electron-hole compensation, with quantum confinement effects in the thin films observed through the presence of quantum-well states. DFT-predicted Fermi wave vectors are in excellent agreement with values obtained from quantum oscillations observed in magnetic field-dependent resistivity measurements. An electron-rich Hall coefficient is measured despite the higher hole-carrier density, attributed to the higher electron Hall mobility. The carrier mobilities are limited by surface and interface scattering, resulting in lower magnetoresistance than that measured for bulk crystals.

36 MATERIALS SCIENCE↗

Quantum anomalous Hall insulator phases in Fe-doped GaBi honeycomb

We discuss electronic and magnetic properties of the Fe-doped GaBi honeycomb using first principles calculations. Our analysis shows that the pristine GaBi honeycomb transitions from being a two-dimensional quantum spin Hall (QSH) insulator to a quantum anomalous Hall (QAH) insulator when it is doped with one Fe atom in a 4 × 4 GaBi honeycomb. Additionally, the QAH phase in Fe-doped GaBi is found to be robust in that it maintains its Chern number (C = 1) under fairly large strains (~ 4%) and supports a gap as large as 112 meV at 2.21% strain. The QAH phase is also retained when the Fe-doped GaBi is placed on a CdTe substrate, suggesting that Fe-doped GaBi films could be useful for spintronics applications.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Accurate determination of the electron spin polarization in magnetized iron and nickel foils for Møller polarimetry

The Møller polarimeter in Hall A at Jefferson Lab in Newport News, VA, has provided reliable measurements of electron beam polarization for the past two decades. Past experiments have typically required polarimetry at the 1% level of absolute uncertainty which the Møller polarimeter has delivered. However, the upcoming proposed experimental program including MOLLER and SoLID have stringent requirements on beam polarimetry precision at the level of 0.4% (The MOLLER Collaboration, 2014; The SoLID collaboration, 2019), requiring a systematic re-examination of all the contributing uncertainties. Møller polarimetry uses the double polarized scattering asymmetry of a polarized electron beam on a target with polarized atomic electrons. The target is a ferromagnetic material magnetized to align the spins in a given direction. In Hall A, the target is a pure iron foil aligned perpendicular to the beam and magnetized out of plane parallel or antiparallel to the beam direction. The acceptance of the detector is engineered to collect scattered electrons close to 90° in the center of mass frame where the analyzing power is a maximum (-7/9). One of the leading systematic errors comes from determination of the target foil polarization. Polarization of a magnetically saturated target foil requires knowledge of both the saturation magnetization and g', the electron g-factor which includes components from both spin and orbital angular momentum from which the spin fraction of magnetization is determined. Target foil polarization has been previously addressed in a 1997 publication “A precise target for Møller polarimetry” by de Bever et al. (1997) at a level of precision sufficient for experiments up to this point. Several shortcomings with the previous published value require revisiting the result prior to MOLLER. Here, we utilize the existing world data to provide a best estimate for target polarization for both nickel and iron foils including uncertainties in magnetization, high-field and temperature dependence, and fractional contribution to magnetization from orbital effects. We determine the foil electron spin polarization at 294 K to be 0.08020 ± 0.00018 (@4 T applied field) for iron and 0.018845+/-0.000053 (@2 T applied field) for nickel. Finally, we conclude with a brief discussion of additional systematic uncertainties to Møller polarimetry using this technique.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

Prediction of unconventional magnetism in doped FeSb 2

Significance For many decades, it has been commonly believed that all electronic states of a collinear antiferromagnet (AF) are spin-degenerate, unless the underlying crystal structure lacks centrosymmetry and has spin–orbit coupling. This has been essentially definitional for antiferromagnetism and is widely used experimentally to distinguish ferromagnets from AFs. Recently, it was demonstrated that a new class of magnets, possessing antiferromagnetic order and without net magnetization but showing a typical ferromagnetic response in many aspects, is possible. We predict that F e S b 2 , which is well known but poorly understood magnetically, is an incipient unconventional magnet of this type and can be pushed to become one by Co or Cr doping. Moreover, the calculated magnetic anisotropy is favorable for exhibiting various anomalous properties.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Sulfur Lone Pairs Control Topology in Heterotrimetallic Complexes: An Experimental and Theoretical Study

Heterotrimetallic complexes with (N 2 S 2 )M metallodithiolates, M = Ni 2+ , [Fe(NO)] 2+ , and [Co(NO)] 2+ , as bidentate chelating ligands to a central trans-Cr(NO)(MeCN) unit were characterized as the first members of a new class, NiCrNi, FeCrFe, CoCrCo. The complexes exhibit a cisoid structural topology, ascribed to the stereoactivity of the available lone pair(s) on the sulfur donors, resulting in a dispersed, electropositive pocket from the N/N and N/S hydrocarbon linkers wherein the Cr-NO site is housed. Computational studies explored alternative isomers (transoid and inverted cisoid) that suggest a combination of electronic and steric effects govern the geometrical selectivity. Electrostatic potential maps readily display the dominant electronegative potential from the sulfurs which force the NO to the electropositive pocket. The available S lone pairs work in synergy with the π-withdrawing ability of NO to lift Cr out of the S 4 plane toward the NO and stabilize the geometry. The metallodithiolate ligands bound to Cr(NO) thus find structural consistency across the three congeners. Although the dinitrosyl [(bme-dach)Co(NO)-Mo(NO)(MeCN)-(bme-dach)Co(MeCN)][PF 6 ] 2 (CoMoCo') analogue displays chemical noninnocence and a partial Mo–Co bond toward (N 2 S 2 )Co'(NCCH 3 ) in an “asymmetric butterfly” topology, the stability of the {Cr(NO)} 5 unit prohibits such bond rearrangement. Magnetism and EPR studies illustrate spin coupling across the sulfur thiolate sulfur bridges.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Structure and magnetism in epitaxial Fe 1 + x VSb nanocomposite films

The combination of ferromagnetism and semiconducting behavior offers an avenue for realizing novel spintronics and spin-enhanced thermoelectrics. Here we demonstrate the synthesis of doped and nanocomposite half-Heusler Fe 1+x VSb films by molecular beam epitaxy. For dilute excess Fe (x < 0.1), we observe a decrease in the Hall electron concentration and no secondary phases in x-ray diffraction. Magnetotransport measurements suggest weak ferromagnetism that onsets at a temperature of T c ≈ 5 K. For higher Fe content (x > 0.1), ferromagnetic Fe nanostructures precipitate from the semiconducting FeVSb matrix. The Fe/FeVSb interfaces are epitaxial, as observed by transmission electron microscopy and x-ray diffraction. Further, magnetotransport measurements suggest proximity-induced magnetism in the FeVSb from the Fe/FeVSb interfaces, or superparamagnetically coupled Fe-rich clusters, at an onset temperature of T c ≈ 20 K.

36 MATERIALS SCIENCE↗

Effects of spin-orbit coupling and very large supercells on the description of acceptors in CdTe

Predicting accurate shallow donor and acceptor levels in semiconductors has been quite challenging using periodic boundary conditions as implemented in current density functional theory codes. The reason is that the wave functions associated with the shallow centers are quite extended and are not fully contained in the supercell (typically with a few hundred atoms) so impurities in the periodically repeated image cells interact with each other. Errors of ~0.1 eV are expected, and these are of the same order of magnitude as the ionization energies themselves. In the case of acceptors in CdTe, this problem is exacerbated by the strong spin-orbit coupling that split the Te-related states at the top of the valence band, making the calculations at least 8 times more expensive. CdTe is an important solar-cell material with record high efficiency of 22%. One of the main limiting factors to increasing the efficiency towards the theoretical limit of ~30% is the often reported very low hole concentration. Pushing to the limit of computational capability by using very large supercells with spin-orbit coupling we report the results of hybrid functional calculations of group-V acceptors in CdTe. We show that extrapolation to the dilute limit leads to an interpretation of the experimental data that is qualitatively different from previous DFT and hybrid functional calculation reports. We find that the group-V impurities indeed behave as shallow acceptors and that the corresponding compensating AX-centers are unstable and do not limit p-type doping. We address the differences between our results and previous theoretical predictions and show that our calculated ionization energies predict hole concentrations that are in excellent agreement with recent temperature-dependent Hall measurements on high-quality single-crystal samples.

14 SOLAR ENERGY↗

Computational discovery of two-dimensional rare-earth iodides: promising ferrovalley materials for valleytronics

Two-dimensional Ferrovalley materials with intrinsic valley polarization are rare but highly promising for valley-based nonvolatile random access memory and valley filter devices. These ferromagnetic materials exhibit valleys at or near the Fermi level with intrinsic magnetism. The strong coupling between magnetism and spin–orbit coupling induces intrinsic valley polarization. Using Kinetically Limited Minimization, an unconstrained crystal structure prediction algorithm, and prototype sampling based on first-principles calculations, we have discovered new Ferrovalley materials, rare-earth iodides RI 2 , where R is a rare-earth element belonging to Sc, Y, or La-Lu, and I is Iodine. The rare-earth iodides are layered and demonstrate either 2H, 1T, or 1T d phase as the ground state in bulk, analogous to transition metal dichalcogenides (TMDCs). The calculated exfoliation energy of monolayers (MLs) is comparable to that of graphene and TMDCs, suggesting possible experimental synthesis. The MLs in the 2H phase exhibit ferromagnetism due to unpaired electrons in d and f orbitals. Throughout the rare-earth series, d bands have valley polarization at K and $\overline{K}$ points in the Brillouin zone in the vicinity of the Fermi level. Large intrinsic valley polarization in the range of 15–143 meV without external stimuli is observed in these Ferrovalley materials, which can be enhanced further by applying an in-plane bi-axial strain. These valleys can selectively be probed and manipulated for information storage and processing, potentially offering superior performance beyond conventional electronics and spintronics. Here we further show that the 2H ferromagnetic phase of RI 2 MLs possesses non-zero Berry curvature and exhibits anomalous valley Hall effect with considerable anomalous Hall conductivity. Our work will incite exploratory synthesis of the predicted Ferrovalley materials and their application in valleytronics and beyond.

2D materials↗

Growth of ultrathin Bi 2 Se 3 films by molecular beam epitaxy

Bi 2 Se 3 is a widely studied 3D topological insulator having potential applications in optics, electronics, and spintronics. When the thickness of these films decreases to less than approximately 6 nm, the top and bottom surface states couple, resulting in the opening of a small gap at the Dirac point. In the 2D limit, Bi 2 Se 3 may exhibit quantum spin Hall states. However, growing coalesced ultrathin Bi 2 Se 3 films with a controllable thickness and typical triangular domain morphology in the few nanometer range is challenging. Here, we explore the growth of Bi 2 Se 3 films having thicknesses down to 4 nm on sapphire substrates using molecular beam epitaxy that were then characterized with Hall measurements, atomic force microscopy, and Raman imaging. We find that substrate pretreatment—growing and decomposing a few layers of Bi 2 Se 3 before the actual deposition—is critical to obtaining a completely coalesced film. In addition, higher growth rates and lower substrate temperatures led to improvement in surface roughness, in contrast to what is observed for conventional epitaxy. Altogether, coalesced ultrathin Bi 2 Se 3 films with lower surface roughness enable thickness-dependent studies across the transition from a 3D-topological insulator to one with gapped surface states in the 2D regime.

36 MATERIALS SCIENCE↗

Clean quantum point contacts in an InAs quantum well grown on a lattice-mismatched InP substrate

Strong spin-orbit coupling, the resulting large g factor, and small effective mass make InAs an attractive material platform for inducing topological superconductivity. The surface Fermi level pinning in the conduction band enables highly transparent ohmic contact without excessive doping. In this study, we investigate electrostatically defined quantum point contacts (QPCs) in a deep-well InAs two-dimensional electron gas. Despite the 3.3% lattice mismatch between the InAs quantum well and the InP substrate, we report clean QPCs with up to eight pronounced quantized conductance plateaus at zero magnetic field. Source-drain dc bias spectroscopy reveals a harmonic confinement potential with a nearly 5 meV subband spacing. We find a many-body exchange interaction enhancement for the out-of-plane g factor |$g^{*}_{⊥}$|=27±1 , whereas the in-plane g factor is isotropic |$g^{*}_{x}$|=|$g^{*}_{y}$|=12±2 , close to the bulk value for InAs.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Fractional chiral hinge insulator

We propose and study a wave function describing an interacting three-dimensional fractional chiral hinge insulator (FCHI) constructed by Gutzwiller projection of two noninteracting second-order topological insulators with chiral hinge modes at half filling. We use large-scale variational Monte Carlo computations to characterize the model states via the entanglement entropy and charge-spin fluctuations. We show that the FCHI possesses fractional chiral hinge modes characterized by a central charge c = 1 and Luttinger parameter K = 1/2, like the edge modes of a Laughlin 1/2 state. The bulk and surface topology is characterized by the topological entanglement entropy (TEE) correction to the area law. While our computations indicate a vanishing bulk TEE, we show that the gapped surfaces host an unconventional two-dimensional topological phase. In a clear departure from the physics of a Laughlin 1/2 state, we find a TEE per surface compatible with (ln √2 )/2, half that of a Laughlin 1/2 state. This value cannot be obtained from topological quantum field theory for purely two-dimensional systems. For the sake of completeness, we also investigate the topological degeneracy.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Magnetochiral tunneling in paramagnetic Co 1/3 NbS 2

Electric currents have the intriguing ability to induce magnetization in nonmagnetic crystals with sufficiently low crystallographic symmetry. Some associated phenomena include the non-linear anomalous Hall effect in polar crystals and the nonreciprocal directional dichroism in chiral crystals when magnetic fields are applied. In this work, we demonstrate that the same underlying physics is also manifested in the electronic tunneling process between the surface of a nonmagnetic chiral material and a magnetized scanning probe. In the paramagnetic but chiral metallic compound Co 1/3 NbS 2 , the magnetization induced by the tunneling current is shown to become detectable by its coupling to the magnetization of the tip itself. This results in a contrast across different chiral domains, achieving atomic-scale spatial resolution of structural chirality. To support the proposed mechanism, we used first-principles theory to compute the chirality-dependent current-induced magnetization and Berry curvature in the bulk of the material. Our demonstration of this magnetochiral tunneling effect opens up an avenue for investigating atomic-scale variations in the local crystallographic symmetry and electronic structure across the structural domain boundaries of low-symmetry nonmagnetic crystals.

36 MATERIALS SCIENCE↗

Disentangling High Harmonic Generation from Surface and Bulk States of a Topological Insulator

The discovery of topological phases has introduced a new dimension to materials science. Three-dimensional (3D) topological insulators (TIs) are a remarkable class of matter that is insulating in the bulk while hosting conductive topological surface states (TSSs) with unique charge and spin properties. High-order harmonic generation (HHG) has emerged as a powerful tool to probe condensed matter systems by providing insights into their electronic structure and dynamic behavior. Here, we investigate HHG in the prototype 3D-TI Bi$_2$Se$_3$. We demonstrate that the contributions of bulk and surface states to the harmonic emission can be controlled by tuning the thickness of thin film samples. An ultrathin (6 nm) film substantially enhances HHG from the surface states, while the bulk states dominate HHG in a thicker (50 nm) film. By applying a quasi-static terahertz perturbing field, we disentangle the bulk and surface responses and reveal the significant impact of the surface states' shift vector and Berry curvature on HHG. Our study provides effective methods for isolating the optical responses of TSSs from those of the bulk, which opens the door to resolving an ongoing debate regarding whether it is possible to reliably extract topological signatures in HHG.

Atomic Physics (physics.atom-ph)↗

Phase diagram of superconductivity in the integer quantum Hall regime

An interplay between pairing and topological orders has been predicted to give rise to superconducting states supporting exotic emergent particles, such as Majorana particles obeying non-Abelian braid statistics. We consider a system of spin polarized electrons on a Hofstadter lattice with nearest-neighbor attractive interaction and solve the mean-field Bogoliubov–de Gennes equations in a self-consistent fashion, leading to gauge-invariant observables and a rich phase diagram as a function of the chemical potential, the magnetic field, and the interaction. As the strength of the attractive interaction is increased, the system first makes a transition from a quantum Hall phase to a skyrmion lattice phase that is fully gapped in the bulk but has topological chiral edge current, characterizing a topologically nontrivial state. This is followed by a vortex phase in which the vortices carrying Majorana modes form a lattice; the spectrum contains a low-energy Majorana band arising from the coupling between neighboring vortex-core Majorana modes but does not have chiral edge currents. For some parameters, a dimer vortex lattice occurs with no Majorana band. The experimental feasibility and the observable consequences of skyrmions as well as Majorana modes are indicated.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Fermiology and transport properties of the candidate topological crystalline insulator SrAg 4 ⁢Sb 2

Compared to time-reversal symmetry-protected ℤ 2 topological insulators and Dirac/Weyl semimetals, there are significantly fewer candidates for topological crystalline insulators. SrAg 4 ⁢Sb 2 is predicted to exhibit topological crystalline insulator behavior when considering spin-orbit coupling. In this study, we systematically investigate single crystals of SrAg 4 ⁢Sb 2 using electrical transport and magnetic torque measurements, along with first-principles calculations. Our transport data reveals its compensated semimetal nature with a magnetoresistance up to around 700% at 2 K and 9 T. Analysis of de Haas–van Alphen oscillations uncovers a Fermi surface consisting of three distinct Fermi pockets with light effective masses. Comparison between the three-dimensional fermiology obtained from our oscillation data and the first-principles calculations demonstrates excellent agreement. This confirms the accuracy of the calculations, which indicate a band inversion centered at the 𝑇 point and identify the existence of nontrivial tube and needle hole Fermi pockets at Γ, alongside one trivial diamond electron pocket at the 𝐹 point in the Brillouin zone. Furthermore, symmetry and topology analysis results in two potential sets of topological invariants, suggesting the emergence of two-dimensional gapless Dirac surface states either on the 𝑎⁢𝑏 planes or on both the 𝑎⁢𝑏 planes and mirror planes, protected by crystal symmetries. Therefore, SrAg 4 ⁢Sb 2 emerges as a promising candidate topological crystalline insulator.

36 MATERIALS SCIENCE↗

Strain and Defect-Tailored Magnetotransport in NiCo 2 O 4 Thin Films and Freestanding Membranes

Magnetic spinel NiCo 2 O 4 is promising for developing spintronic applications due to its high magnetic Curie temperature, high spin polarization, fast spin dynamics, and strain-tunable magnetic anisotropy, while its electronic and magnetic properties depend sensitively on epitaxial strain and disorder. Here, in this study, we use epitaxial NiCo 2 O 4 thin films and freestanding NiCo 2 O 4 membranes as model systems to reveal the complex interplay of strain and defects in determining the metallicity and magnetotransport properties of the ferrimagnetic spinel. NiCo 2 O 4 on perovskite substrates and NiCo 2 O 4 membranes exhibit insulating behaviors and spin canting, in sharp contrast to the metallic NiCo 2 O 4 films on spinel substrates that possess strong perpendicular magnetic anisotropy. Anisotropic magnetoresistance studies provide critical information about disorder-induced spin scattering and strain-induced tetragonal magnetocrystalline anisotropy, which is corroborated by comprehensive electron microscopy characterizations. Our study presents a promising venue for designing flexible magnetic memory, sensor, and spintronic applications.

36 MATERIALS SCIENCE↗

Emergent Magnetism with Continuous Control in the Ultrahigh-Conductivity Layered Oxide PdCoO 2

The current challenge to realizing continuously tunable magnetism lies in our inability to systematically change properties, such as valence, spin, and orbital degrees of freedom, as well as crystallographic geometry. Here, we demonstrate that ferromagnetism can be externally turned on with the application of low-energy helium implantation and can be subsequently erased and returned to the pristine state via annealing. We find that this high level of continuous control is made possible by targeting magnetic metastability in the ultrahigh-conductivity, nonmagnetic layered oxide PdCoO 2 where local lattice distortions generated by helium implantation induce the emergence of a net moment on the surrounding transition metal octahedral sites. These highly localized moments communicate through the itinerant metal states, which trigger the onset of percolated long-range ferromagnetism. The ability to continuously tune competing interactions enables tailoring precise magnetic and magnetotransport responses in an ultrahigh-conductivity film and will be critical to applications across spintronics.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

First constraints on WIMP-nucleon effective field theory couplings in an extended energy region from LUX-ZEPLIN

Following the first science results of the LUX-ZEPLIN (LZ) experiment, a dual-phase xenon time projection chamber operating from the Sanford Underground Research Facility in Lead, South Dakota, USA, we report the initial limits on a model-independent nonrelativistic effective field theory describing the complete set of possible interactions of a weakly interacting massive particle (WIMP) with a nucleon. These results utilize the same 5.5 t fiducial mass and 60 live days of exposure collected for the LZ spin-independent and spin-dependent analyses while extending the upper limit of the energy region of interest by a factor of 7.5 to 270 keV. No significant excess in this high energy region is observed. Using a profile-likelihood ratio analysis, we report 90% confidence level exclusion limits on the coupling of each individual nonrelativistic WIMP-nucleon operator for both elastic and inelastic interactions in the isoscalar and isovector bases. Published by the American Physical Society 2024

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗