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Contamination reduced in modified growth system. In Silicon-ribbongrowth apparatus, capillary filament guides are integral parts of crucible, extending from bottom to top of melt. Addition of guides expected to result in better thermal control of growth process and higher silicon purity.
The production process of solar grade silicon (SOG-Si) through trichlorosilane (TCS) was researched in a program sponsored by New Energy Development Organization (NEDO). The NEDO process consists of the following two steps: TCS production from by-product silicon tetrachloride (STC) and SOG-Si formation from TCS using a fluidized bed reactor. Based on the data obtained during the research program, the manufacturing cost of the NEDO process and other polysilicon manufacturing processes were compared. The manufacturing cost was calculated on the basis of 1000 tons/year production. The cost estimate showed that the cost of producing silicon by all of the new processes is less than the cost by the conventional Siemens process. Using a new process, the cost of producing semiconductor grade silicon was found to be virtually the same with any to the TCS, diclorosilane, and monosilane processes when by-products were recycled. The SOG-Si manufacturing processes using the fluidized bed reactor, which needs further development, shows a greater probablility of cost reduction than the filament processes.
Etching resist as masking agent in photoengraving silicon semiconductor wafers and process specifications
Proposed improvement for silicon crystal growing enables rapid heating of melt in vicinity of liquid-solid interface to compensate for decreases in melt temperature, to ensure uniform diameter and composition in ingot. Intended for growing large silicon ingots by Czochralski process, cylindrical single-crystal ingot pulled from molten silicon. Heating confined to small mass near growing crystal.
Proposed integrated circuit consists of focal-plane array of metal/germanium Schottky-barrier photodetectors on same chip with silicon-based circuits that processes signals from photodetectors. Made compatible with underlying silicon-based circuitry by growing germanium epitaxially on silicon circuit wafers. Metal deposited in ultrahigh vacuum immediately after growth of germanium. Combination of described techniques results in high-resolution infrared-imaging circuits of superior performance.
Waldron has proposed to extract lunar silicon by sodium reduction of sodium fluorosilicate derived from reacting sodium fluoride with lunar silicon tetrafluoride. Silicon tetrafluoride is obtained by the action of hydrofluoric acid on lunar silicates. While these reactions are well understood, the resulting lunar silicon is not likely to meet electronic specifications of 5 nines purity. Dale and Margrave have shown that silicon difluoride can be obtained by the action of silicon tetrafluoride on elemental silicon at elevated temperatures (1100-1200 C) and low pressures (1-2 torr). The resulting silicon difluoride will then spontaneously disproportionate into hyperpure silicon and silicon tetrafluoride in vacuum at approximately 400 C. On its own merits, silicon difluoride polymerizes into a tough waxy solid in the temperature range from liquid nitrogen to about 100 C. It is the silicon analog of teflon. Silicon difluoride ignites in moist air but is stable under lunar surface conditions and may prove to be a valuable industrial material that is largely lunar derived for lunar surface applications. The most effective driver for lunar industrialization may be the prospects for industrial space solar power systems in orbit or on the moon that are built with lunar materials. Such systems would require large quantities of electronic grade silicon or compound semiconductors for photovoltaics and electronic controls. Since silicon is the most abundant semimetal in the silicate portion of any solar system rock (approximately 20 wt percent), lunar silicon production is bound to be an important process in such a solar power project. The lunar silicon extraction process is discussed.
Data for the beam-leaded silicon-on-sapphire (SOS) process using the TA5388 dual-complementary pair plus inverted circuit show the stability of the dc device characteristics through the complete beam-lead processing and packaging steps. A more complex circuit, the TA6567 - a silicon-gate, voltage-sense BL/CMOS/SOS 256-bit RAM, has also been made that was functionally perfect at wafer probe. Efforts to increase the yield of this circuit and to obtain electrically perfect packaged units are discussed.
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Potential designs for an integrated fluidized-bed reactor/zinc vaporizer/SiCl4 preheater unit are being considered and heat-transfer calculations have been initiated on versions of the zinc vaporizer section. Estimates of the cost of the silicon prepared in the experimental facility have been made for projected capacities of 25, 50, 75, and 100 metric ton of silicon. A 35 percent saving is obtained in going from 25 metric ton/year to the 50 metric ton/year level. This analysis, coupled with the recognition that use of two reactors in the 50 metric ton/year version allows for continued operation (at reduced capacity) with one reactor shut down, has resulted in a recommendation for adoption of an experimental facility capacity of 50 metric ton/year or greater. At this stage, the change to a larger size facility would not increase the design costs appreciably. In the experimental support program, the effects of seed bed particle size and depth were studied, and operation of the miniplant with a new zinc vaporizer was initiated, revealing the need for modification of the latter.
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Progress from October 1, 1977, through December 31, 1977, is reported in the design of the 50 MT/year experimental facility for the preparation of high purity silicon by the zinc vapor reduction of silicon tetrachloride in a fluidized bed of seed particles to form a free flowing granular product.
A process for fabricating 2 to 3 mil wraparound solar cells was formulated. Sample thin wraparound cells were fabricated using this process. The process used a reinforced perimeter construction to reduce the breakage that occurs during handling of the wafers. A retracting piston post was designed and fabricated to help minimize the breakage that occurs during the screen printing process. Two alternative methods of applying the aluminum back surface field were investigated. In addition to the standard screen printed back surface field, both spin-on and evaporated aluminum techniques were researched. Neither spin-on nor evaporated aluminum made any noticeable improvement over the screen printing technique. A fine screen mesh was chosen for the application of the aluminum paste back surface field. The optimum time and temperature for firing the aluminum turned out to be thirty seconds at 850 C. The development work on the dielectric included looking at three dielectrics for the wraparound application. Transene 1000, Thick Film Systems 1126RCB and an in house formulation 61-2-2A were all tested. Cells with pre-dielectric thickness of 3.0-0-3.5 mils using Transene 1000 as the wraparound dielectric and the procedure outlined above showed an average efficiency of 10.7 percent. Thinner cells were fabricated, but had an unacceptable yield and efficiency.
Alternate processing technologies were developed and introduced into the pilot line with a resulting increase in the efficiency of the thin cells. The introduction of an aluminum paste alloy technique for the formation of a back surface field represents a significant advance over previous techniques. The fabrication and results for quantities in excess of 2000 2 cm x 2 cm thin cells and 1000 5 cm x 5 cm thin cells are described. Substantial improvement in performance and yield of the thin cells were obtained. The overall yield of the 2 cm x 2 cm pilot line was better than 38%, while the best lot yield was greater than 51%. The average power density of the 2 cm x 2 cm cells was approximately 16.8 mW/sq cm with an average AMO (at 25 C) efficiency of 12.4%. The lot yield of the 5 cm x 5 cm pilot line improved from only 7% at the beginning of the operation to better than 17% as experience was gained. The average 5 cm x 5 cm thin cell had an AMO efficiency (at 25 C) of 11.5%.
Six growth runs used the Kayex-Hameo Automatic Games Logic (AGILE) computer based system for growth from larger melts in the Mod CG2000. The implementation of the melt pyrometer sensor allowed for dip temperature monitoring and usage by the operator/AGILE system. Use of AGILE during recharge operations was successfully evaluated. The tendency of crystals to lose cylindrical shape (spiraling) continued to be a problem. The hygrometer was added to the Furnace Gas Analysis System and used on several growth runs. The gas chromatograph, including the integrator, was also used for more accurate carbon monoxide concentration measurements. Efforts continued for completing the automation of the total Gas Analysis System. An economic analysis, based on revised achievable straight growth rate, is presented.
For the ion implantation tooling was fabricated with which to hold dendritic web samples. This tooling permits the expeditious boron implantation of the back to form the back surface field (BSF). Baseline BSF web cells were fabricated.
The improvement of growth rates using radiation shielding and investigation of the crucible melt interaction for improved yields were emphasized. Growth runs were performed from both 15 and 16 inch diameter crucibles, producing 30 and 37 kg ingots respectively. Efforts to increase the growth rate of 150 mm diameter ingots were limited by temperature instabilities believed to be caused by undesirable thermal convections in the larger melts. The radiation shield improved the growth rate somewhat, but the thermal instability was still evident, leading to nonround ingots and loss of dislocation-free structure. A 38 kg crystal was grown to demonstrate the feasibility of producing 150 kg with four growth cycles. After the grower construction phase, the Hamco microprocessor control system was interfaced to the growth facility, including the sensor for automatic control of seeding temperature, and the sensor for automatic shouldering. Efforts focused upon optimization of the seeding, necking, and shoulder growth automation programs.
Silicon material research in the Republic of China (ROC) parallels its development in the electronic industry. A brief outline of the historical development in ROC silicon material research is given. Emphasis is placed on the recent Silane Project managed by the National Science Council, ROC, including project objectives, task forces, and recent accomplishments. An introduction is also given to industrialization of the key technologies developed in this project.
Alternate processing methods have been investigated as a means of improving the mechanical properties of injection-molded SiC. Various mixing processes (dry, high-sheer, and fluid) were evaluated along with the morphology and particle size of the starting beta-SiC powder. Statistically-designed experiments were used to determine significant effects and interactions of variables in the mixing, injection molding, and binder removal process steps. Improvements in mechanical strength can be correlated with the reduction in flaw size observed in the injection molded green bodies obtained with improved processing methods.