Preparation of Co{sub 2}FeSn Heusler alloy films and magnetoresistance of Fe/MgO/Co{sub 2}FeSn magnetic tunnel junctions
To obtain magnetic tunnel junctions (MTJs) composed of non-equilibrium alloy, Co{sub 2}FeSn films were prepared by atomically controlled alternate deposition at various substrate temperatures. X-ray diffraction patterns and Moessbauer spectra clarify that Co{sub 2}FeSn films in the Heusler alloy phase can be realized by growing at a substrate temperature of 250 deg. C or below. Phase separation into cubic CoSn, hexagonal CoSn and cubic CoFe phases occurs in films grown at substrate temperatures 300 deg. C or greater. Fe/MgO/Co{sub 2}FeSn MTJs were prepared with the Co{sub 2}FeSn layer grown at various substrate temperatures. The MTJs with the ferromagnetic Co{sub 2}FeSn layer grown at a substrate temperature of 250 deg. C showed tunnel magnetoresistance ratios of 72.2% and 43.5% at 2 K and 300 K, respectively.