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At least 469 records · Page 26

Annealing effects in plated-wire memory elements. II - Recrystallization in Permalloy films.

Results of grain-size measurements in Permalloy platings suggest that recrystallization is possible at temperatures as low as 200 C, but that it is an extremely heterogeneous process. No worthwhile correlation was found to exist between observed grain size and magnetic dispersion in samples aged in the temperature range from 180 to 230 C. It is suggested that the magnetic aging which occurs under these conditions may be due to some other diffusion-controlled process than recrystallization; a process such as chemical homogenization is tentatively preferred.

Marquardt, S. J.↗

Holographic optical elements: Fabrication and testing

The basic properties and use of holographic optical elements were investigated to design and construct wide-angle, Fourier-transform holographic optical systems for use in a Bragg-effect optical memory. The performance characteristics are described along with the construction of the holographic system.

Zech, R. G.↗

Deriving Indicial Response From Navier-Stokes Equations

Report discusses research directed toward recasting indicial-response approach into form appropriate to study of vortex-induced oscillations and related aerodynamic and aeroelastic phenomena. Serves two purposes: to show how deficiencies of prior mathematical model overcome to include effects of memory necessary for modeling of oscillatory but otherwise equilibrium state; and using method developed to analyze particular case of flow past cylinder in periodic forced transverse motion.

Truong, K. V.↗

Assessing the Effects of Momentary Priming on Memory Retention During an Interference Task

A memory aid, that used brief (33ms) presentations of previously learned information (target words), was assessed on its ability to reinforce memory for target words while the subject was performing an interference task. The interference task required subjects to learn new words and thus interfered with their memory of the target words. The brief presentation (momentary memory priming) was hypothesized to refresh the subjects memory of the target words. 143 subjects, in a within subject design, were given a 33ms presentation of the target memory words during the interference task in a treatment condition and a blank 33ms presentation in the control condition. The primary dependent measure, memory loss over the interference trial, was not significantly different between the two conditions. The memory prime did not appear to hinder the subjects performance on the interference task. This paper describes the experiment and the results along with suggestions for future research.

Schutte, Paul C.↗

Computational and Experimental Simulation of Static Memory Cells of Submicron Microcircuits under the Effect of Neutron Fluxes

The simulation of reversible single events in test samples of static memory microcircuits with design norms of 0.5, 0.35, 0.25, and 0.1 μm under the effect of neutron fluxes with various energies is performed. It is shown theoretically and experimentally that reversible single events can occur in modern microelectronics and nanoelectronics products under the effect of a fission-spectrum neutron flux caused by the passage of primary recoil atoms and nuclear reaction products along the microcircuit surface perpendicularly to the electric current lines in the near-drain transistor area. A series of irradiation experiments of static memory circuits with design norms of 0.35 μm is interpreted based on the proposed model.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Physical implication of transition voltage in organic nano-floating-gate nonvolatile memories

High-performance pentacene-based organic field-effect transistor nonvolatile memories, using polystyrene as a tunneling dielectric and Au nanoparticles as a nano-floating-gate, show parallelogram-like transfer characteristics with a featured transition point. The transition voltage at the transition point corresponds to a threshold electric field in the tunneling dielectric, over which stored electrons in the nano-floating-gate will start to leak out. The transition voltage can be modulated depending on the bias configuration and device structure. For p-type active layers, optimized transition voltage should be on the negative side of but close to the reading voltage, which can simultaneously achieve a high ON/OFF ratio and good memory retention.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Microstructure Anisotropy Effects on Fracture and Fatigue Mechanisms in Shape Memory Alloy Martensites

The chief scientific object was to investigate the fatigue and fracture mechanisms in NiTi shape memory alloys, in the presence of stress concentrating factors such as micro-pores and notches. In particular, the interactions between structure (factors related to the geometry of the specimen, such as holes, pores and notches) and microstructure (related to properties of the material such as grains, secondary phases, twins) in influencing the inelastic deformation, leading up to fracture in NiTi was examined. Primarily, there were two major thrusts. The first thrust focused on fracture behavior in Shape Memory Alloys where the high crystal symmetry cubic phase transformed into the low symmetry phase during deformation and propagation of cracks. This thrust revealed the interplay between size of micro-pores, size of grains and grain orientations in determining the resistance to crack growth, during cyclic tensile deformation of porous-like NiTi specimens. The role of secondary phases (impurities of Ti, often formed during fabrication) were also shown to induce local inelastic deformation gradients during tensile deformation and reduce overall extent of deformation. The second thrust focused on the fatigue and fracture behavior in the low crystal symmetry martensite phase. Unlike high symmetry phases, characterization of deformation in low symmetry phases such as martensitic NiTi has been challenging, due to a hierarchical microstructure spanning from nanoscale twins to the macroscale, a highly anisotropic microstructure stemming from the low crystal symmetry and a multitude of inelastic mechanisms for deformation. Thus, advanced X-ray techniques such as 3D high-energy diffraction microscopy and x-ray micro-Laue diffraction and spectroscopy were used in conjunction with traditional techniques such as SEM and TEM to understand the inelastic deformation in the martensite phase in NiTi, in the presence of notches. This thrust revealed a stark difference in deformation mechanisms based on the nature of stress: regions near the notch experience a highly triaxial stress while those far away experience a uniaxial stress. Additionally, while regions close to the notch were shown to deform locally by amorphization/nanocrystallization, ultimately leading to fracture, regions far away from the notch deformed in a more traditional manner, with detwinning and twin reorientation the primary mechanisms of deformation. More importantly, this thrust revealed that in the presence of structural factors such as notches, the traditional picture of reorientation (coalescence) of nanoscale martensite twins into increasingly larger domains with increased loading does not hold true, even up to fracture of the specimen. These conclusions will inform the modeling and understanding of deformation behavior of specimens, where structure and microstructure coexist and interact.

36 MATERIALS SCIENCE↗

Register-Like Block RAM: Implementation, Testing in FPGA and Applications for High Energy Physics Trigger Systems

In high energy physics experiment trigger systems, block memories are utilized for various purposes, especially in indexed searching algorithms. It is often demanded to globally reset all memory locations between different events which is a feature not supported in regular block memories. Another common demand is to be able to update the contents in any memory location in a single clock cycle. These two demands can be fulfilled with registers but the cost of using registers for large memory is unaffordable. In this paper, a register-like block memory design scheme is described, which allows updating memory locations in single clock cycle and effectively refreshing entire memory within a single clock. The implementation and test results are presented.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗

Total-Ionizing-Dose Effects on Read Noise of MLC 3-D NAND Memories T

This paper analyzes the total ionizing dose (TID) effects on noise characteristics of commercial multi-level-cell (MLC) 3-D NAND memory technology during the read operation. Additionally, the chips were exposed to a Co-60 gamma-ray source for up to 100 krad(Si) of TID. We find that the number of noisy cells in the irradiated chip increases with TID. Bit-flip noise was more dominant for cells in an erased state during irradiation compared to programmed cells.

3-D NAND Flash↗

Transcranial direct current stimulation of dorsolateral prefrontal cortex during encoding improves recall but not recognition memory

Prior work demonstrates that application of transcranial direct current stimulation (tDCS) improves memory. In this study, we investigated tDCS effects on face-name associative memory using both recall and recognition tests. Participants encoded face-name pairs under either active (1.5 mA) or sham (.1 mA) stimulation applied to the scalp adjacent to the left dorsolateral prefrontal cortex (dlPFC), an area known to support associative memory. Participants’ memory was then tested after study (day one) and then again after a 24-h delay (day two), to assess both immediate and delayed stimulation effects on memory. Results indicated that active relative to sham stimulation led to substantially improved recall (more than 50%) at both day one and day two. Recognition memory performance did not differ between stimulation groups at either time point. These results suggest that stimulation at encoding improves memory performance by enhancing memory for details that enable a rich recollective experience, but that these improvements are evident only under some testing conditions, especially those that rely on recollection. Altogether, stimulation of the dlPFC could have led to recall improvement through enhanced encoding from stimulation or from carryover effects of stimulation that influenced retrieval processes, or both.

60 APPLIED LIFE SCIENCES↗

TiNi-Based Bi-Metallic Shape-Memory Alloy by Laser-Directed Energy Deposition

In this study, laser-directed energy deposition was applied to build a Ti-rich ternary Ti–Ni–Cu shape-memory alloy onto a TiNi shape-memory alloy substrate to realize the joining of the multifunctional bi-metallic shape-memory alloy structure. The cost-effective Ti, Ni, and Cu elemental powder blend was used for raw materials. Various material characterization approaches were applied to reveal different material properties in two sections. The as-fabricated Ti–Ni–Cu alloy microstructure has the TiNi phase as the matrix with Ti2Ni secondary precipitates. The hardness shows no high values indicating that the major phase is not hard intermetallics. A bonding strength of 569.1 MPa was obtained by tensile testing, and digital image correlation reveals the different tensile responses of the two sections. Differential scanning calorimetry was used to measure the phase-transformation temperatures. The austenite finishing temperature of higher than 80 °C was measured for the Ti–Ni–Cu alloy section. For the TiNi substrate, the austenite finishing temperature was tested to be near 47 °C at the bottom and around 22 °C at the upper substrate region, which is due to the repeated laser scanning that acts as annealing on the substrate. Finally, the multiple shape-memory effect of two shape-memory alloy sides was tested and identified.

36 MATERIALS SCIENCE↗

Differential Age Effects of Transcranial Direct Current Stimulation on Associative Memory

Abstract Objectives Older adults experience associative memory deficits relative to younger adults (Old & Naveh-Benjamin, 2008). The aim of this study was to test the effect of transcranial direct current stimulation (tDCS) on face-name associative memory in older and younger adults. Method Experimenters applied active (1.5 mA) or sham (0.1 mA) stimulation with the anode placed over the left dorsolateral prefrontal cortex (dlPFC) during a face-name encoding task, and measured both cued recall and recognition performance. Participants completed memory tests immediately after stimulation and after a 24-h delay to examine both immediate and delayed stimulation effects on memory. Results Results showed improved face-name associative memory performance for both recall and recognition measures, but only for younger adults, whereas there was no difference between active and sham stimulation for older adults. For younger adults, stimulation-induced memory improvements persisted after a 24-h delay, suggesting delayed effects of tDCS after a consolidation period. Discussion Although effective in younger adults, these results suggest that older adults may be resistant to this intervention, at least under the stimulation parameters used in the current study. This finding is inconsistent with a commonly seen trend, where tDCS effects on cognition are larger in older than younger adults.

Leach, Ryan C.↗

Single-Event Effect Performance of a Conductive-Bridge Memory EEPROM

We investigated the heavy ion SEE characteristics of an EEPROM based on CBRAM technology. SEFI is the dominant type of SEE for each operating mode (standby, read-only, write/read). We also observed single bit upsets in the CBRAM cell, during write/read tests. the SEULET threshold is between 10 and 20 MeV * sq cm/mg, with an upper fluence limit of 3 × 10(exp 6) cm(exp -2) at 10 MeV * sq cm/mg. In the stand by mode, the CBRAM array appears immune to bit upsets.

single event effects↗

Effects of noise on the performance of a memory decision response task

An investigation has been made to determine the effects of noise on human performance. Fourteen subjects performed a memory-decision-response task in relative quiet and while listening to tape recorded noises. Analysis of the data obtained indicates that performance was degraded in the presence of noise. Significant increases in problem solution times were found for impulsive noise conditions as compared with times found for the no-noise condition. Performance accuracy was also degraded. Significantly more error responses occurred at higher noise levels; a direct or positive relation was found between error responses and noise level experienced by the subjects.

Lawton, B. W.↗

A New Concept for Non-Volatile Memory: The Electric-Pulse Induced Resistive Change Effect in Colossal Magnetoresistive Thin Films

A novel electric pulse-induced resistive change (EPIR) effect has been found in thin film colossal magnetoresistive (CMR) materials, and has shown promise for the development of resistive, nonvolatile memory. The EPIR effect is induced by the application of low voltage (< 4 V) and short duration (< 20 ns) electrical pulses across a thin film sample of a CMR material at room temperature and under no applied magnetic field. The pulse can directly either increase or decrease the resistance of the thin film sample depending on pulse polarity. The sample resistance change has been shown to be over two orders of magnitude, and is nonvolatile after pulsing. The sample resistance can also be changed through multiple levels - as many as 50 have been shown. Such a device can provide a way for the development of a new kind of nonvolatile multiple-valued memory with high density, fast write/read speed, low power-consumption, and potential high radiation-hardness.

Liu, S. Q.↗

The OpenMP Implementation of NAS Parallel Benchmarks and its Performance

As the new ccNUMA architecture became popular in recent years, parallel programming with compiler directives on these machines has evolved to accommodate new needs. In this study, we examine the effectiveness of OpenMP directives for parallelizing the NAS Parallel Benchmarks. Implementation details will be discussed and performance will be compared with the MPI implementation. We have demonstrated that OpenMP can achieve very good results for parallelization on a shared memory system, but effective use of memory and cache is very important.

Jin, Hao-Qiang↗